CN103903979A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
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- CN103903979A CN103903979A CN201210584555.6A CN201210584555A CN103903979A CN 103903979 A CN103903979 A CN 103903979A CN 201210584555 A CN201210584555 A CN 201210584555A CN 103903979 A CN103903979 A CN 103903979A
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- polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Abstract
The invention discloses a process method for through-silicon via polishing. The process method for TSV (through-silicon via) chemical mechanical polishing comprises the following steps: step A: a copper cap layer is removed by using copper polishing liquid and the surface is flattened; step B, a tantalum barrier layer and part of a dielectric layer are removed by using barrier layer polishing liquid and the surface is flattened; and step C, the dielectric layer is removed by using barrier layer chemical mechanical polishing liquid to which silicon nitride inhibitor is added, and a silicon nitride layer is retained, wherein the silicon nitride inhibitor is separately added online from a material feeding pipe. The polishing method can improve the productivity, the dielectric layer can stop on a silicon nitride stop layer after polishing, and the polishing process can be well controlled.
Description
Technical field
The present invention relates to a kind of cmp method, more particularly, relate to a kind of CMP (Chemical Mechanical Polishing) process for silicon through hole.
Background technology
Along with the development of integrated circuit, on the one hand, in traditional IC industry, in order to improve integrated level, reduce energy consumption, shorten time of delay, live width is more and more narrow.On the other hand, due to physical limitation, live width can not infinitely be dwindled, and semicon industry no longer merely relies on integrated more device on one chip and improves performance, and turns on multi-chip package.Silicon through hole (TSV) technology, realizes the state-of-the-art technology interconnecting between chip and obtains the extensive accreditation of industrial quarters by between chip and chip, make vertical conducting between wafer and wafer as one.TSV can make chip in the stacking density maximum of three-dimensional, and overall dimension minimum is improved the performance of chip speed and low-power consumption greatly.
Current TSV technique is the copper perforation that forms through-silicon substrate in conjunction with traditional IC technique, in TSV opening, fills copper and realizes conducting, and copper and barrier layer unnecessary after filling also need to utilize chemico-mechanical polishing removal to reach planarization.Different from traditional IC industry, because silicon through hole is very dark, the barrier layer after filling has the thickness of several thousand dusts conventionally, and below dielectric layer, conventionally has a silicon nitride stop-layer (as shown in Figure 1).
Chemico-mechanical polishing need to remove unnecessary copper, barrier layer and dielectric layer be parked on stop-layer.In order to remove fast these copper and barrier layer, conventionally need to there is very high copper, the removal speed of barrier layer and dielectric layer, the removal speed of silicon nitride is low simultaneously, to can be parked in well on stop-layer.Conventionally barrier layer and dielectric layer polishing are used same polishing fluid to complete on a polishing disk, for barrier polishing can be well parked on stop-layer, people attempt adding silicon nitride inhibitor in barrier polishing solution, but silicon nitride inhibitor also can suppress the removal speed on the barrier layers such as tantalum conventionally, cause barrier removal rates lower, polishing time lengthens, and production capacity is affected.In order to address this problem, the present invention adopts following finishing method: at first polishing disk removal of copper, on second polishing disk, remove tantalum barrier layer, on the 3rd polishing disk, remove dielectric layer and be parked on silicon nitride.Wherein, what first polishing disk used is copper polishing fluid, and second polishing disk uses barrier polishing solution, uses same barrier polishing solution, and added online silicon nitride inhibitor on the 3rd polishing disk.
Patent of invention US20090045164A1 has introduced the finishing method of a kind of dielectric materials polishing " general " barrier layer chemical mechanical polishing liquid.The method comprises several polishing steps: first remove barrier layer with barrier polishing solution, when polishing cover layer (Cap layer), in polishing fluid, add additive to reduce the removal speed of dielectric materials (low-k), change the selection ratio of cover layer and dielectric materials (low-k), thereby made polish stop on dielectric materials (low-k).
Patent of invention US20030008599A1 has introduced a kind of cmp method.The method is introduced Oxidizing and Reducing Agents by the different phase at polishing process and is changed copper polishing speed, the saucerization of copper after reduction polishing.
Patent of invention US20100130101A1 has introduced cmp method, and the method is by being incorporated into different polishing fluid compositions on polishing pad with two pipelines, and on-line mixing becomes polishing fluid for polishing.Regulate polishing speed by the flow that regulates heterogeneity.
In sum, in disclosed patent and document before this, do not have a kind of specially for the polishing fluid of TSV barrier polishing.
Summary of the invention
The object of the present invention is to provide and a kind ofly can stop at the finishing method on silicon nitride when thering is higher barrier removal rates.
Process for the chemico-mechanical polishing of TSV silicon through hole provided by the invention, comprises the following steps:
Steps A: remove copper capping layer effects on surface with copper polishing fluid and carry out planarization;
Step B: remove tantalum barrier layer and part dielectric layer effects on surface with barrier polishing solution and carry out planarization; Step C: remove dielectric layer and retain silicon nitride layer with the barrier layer chemical mechanical polishing liquid that adds silicon nitride inhibitor, wherein, described silicon nitride inhibitor adds online from a feeder sleeve separately.Silicon nitride inhibitor adds separately the removal speed that can suppress silicon nitride, improves the selection ratio of silicon dioxide to silicon nitride removal speed.
In the present invention, the copper polishing fluid in described steps A, is greater than the removal speed of copper
In the present invention, described steps A downforce used is 1.0-3.0psi, and rotating speed is 50-120rpm.Described step B downforce used is 1.0-3.0psi, and rotating speed is 50-120rpm.Described step C downforce used is 1.0-3.0psi, and rotating speed is 50-120rpm.
In the present invention, the barrier polishing solution in described step B comprises a kind of abrasive grains and water.
In the present invention, described abrasive grains is silicon dioxide gel.
In the present invention, the content of described abrasive grains is 15-40wt%.
In the present invention, described barrier polishing solution also comprises corrosion inhibiter, complexing agent and oxidant.
In the present invention, the pH value of barrier polishing solution is 2-4.
In the present invention, described silicon nitride inhibitor is naphthalenesulfonate surfactant or phosphoric acid ester surfactant.
In the present invention, described silicon nitride inhibitor is sodium metnylene bis-naphthalene sulfonate, methyl naphthalene sulfonic acid sodium formaldehyde condensation polymer, benzyl naphthalene sulfonic acid formaldehyde condensation polymer, one or more in alkyl phosphate diethanolamine salt and/or alkyl phosphate triethanolamine salt.
In the present invention, the alkyl carbon atoms number of described alkyl phosphate salt surfactant is selected from 8～12.
In the present invention, the content of described silicon nitride inhibitor is 0.1-0.5wt%.
In the polishing fluid using in step B of the present invention and C, can also comprise the conventional pH adjusting agents such as nitric acid, potassium hydroxide, ammoniacal liquor, the auxiliary agent that this areas such as defoamer and bactericide are conventional.
Wherein, the copper polishing fluid using in steps A, can be commercially available any copper polishing fluid, for example, pacify fairground and sell TSV-A21, and those skilled in the art can understand very simply, and any polishing fluid only needs the removal speed of copper to be greater than
all can be used for enforcement of the present invention.
Positive progressive effect of the present invention is:
1) by the polishing time of the each polishing disk of process integration reasonable distribution, shortened polishing time compared with traditional three step finishing methods, improve production capacity
2) make barrier polishing solution can remove quickly barrier layer by process modification, can be parked in well again on silicon nitride stop-layer.
Brief description of the drawings
Fig. 1 is the processing step that TSV figure wafer is carried out to polishing.
Embodiment
Below by specific embodiment, the chemical mechanical polishing liquid of polished silicon through hole of the present invention is described in detail, so that better understand the present invention, but following embodiment does not limit the scope of the invention.In embodiment, each percentage composition is mass percent.The experimental technique of unreceipted actual conditions in embodiment, conventionally according to normal condition, or the condition of advising according to manufacturer.
Comparative example
1
Copper polishing fluid: A-21 copper polishing fluid is sold in peace fairground
Barrier polishing solution: 15% silicon dioxide, corrosion inhibiter is BTA, and complexing agent is oxalic acid, and silicon nitride inhibitor is 0.1% sodium metnylene bis-naphthalene sulfonate, and oxidant is hydrogen peroxide, water surplus, pH=3.0
1. on first polishing disk and second polishing disk, use A-21 copper polishing fluid, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
2. on the 3rd polishing disk, use barrier polishing solution, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
Comparative example 2
Copper polishing fluid: A-21 copper polishing fluid is sold in peace fairground
Barrier polishing solution: 15% silicon dioxide, corrosion inhibiter is BTA, and complexing agent is oxalic acid, and silicon nitride inhibitor is 0.1% sodium metnylene bis-naphthalene sulfonate, and oxidant is hydrogen peroxide, water surplus, pH=3.0
1. on first polishing disk, use A-21 copper polishing fluid, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
2. on second polishing disk, use barrier polishing solution, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
3. on the 3rd polishing disk, use same barrier polishing solution.The same second step of polishing condition.
Copper polishing fluid: A-21 copper polishing fluid is sold in peace fairground
Barrier polishing solution: 15wt% silicon dioxide, corrosion inhibiter is BTA, and complexing agent is oxalic acid, and oxidant is hydrogen peroxide, and water is surplus, pH=3.0
Silicon nitride inhibitor: sodium metnylene bis-naphthalene sulfonate
1. on first polishing disk, use A-21 copper polishing fluid, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
2. on second polishing disk, use barrier polishing solution, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
3. on the 3rd polishing disk, use barrier polishing solution, add the sodium metnylene bis-naphthalene sulfonate solution of concentration as 10wt% with another charge pipe taking the flow velocity of 15ml/min simultaneously.The same second step of polishing condition.
Copper polishing fluid: A-21 copper polishing fluid is sold in peace fairground
Barrier polishing solution: 25wt% silicon dioxide, corrosion inhibiter is methyl benzotriazazole, and complexing agent is citric acid, and oxidant is hydrogen peroxide, and water is surplus, pH=2.0
Silicon nitride inhibitor: methyl naphthalene sulfonic acid sodium formaldehyde condensation polymer
1. on first polishing disk, use A-21 copper polishing fluid, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=55/50rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
2. on second polishing disk, use barrier polishing solution, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=55/50rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
3. on the 3rd polishing disk, use barrier polishing solution, add the methyl naphthalene sulfonic acid sodium formaldehyde condensation polymer solution of concentration as 10wt% with another charge pipe taking the flow velocity of 45ml/min simultaneously.The same second step of polishing condition.
Copper polishing fluid: A-21 copper polishing fluid is sold in peace fairground
Barrier polishing solution: 30wt% silicon dioxide, corrosion inhibiter is 1,2,4-triazole, and complexing agent is malonic acid, and oxidant is hydrogen peroxide, and water is surplus, pH=4.0
Silicon nitride inhibitor: benzyl naphthalene sulfonic acid formaldehyde condensation polymer
1. on first polishing disk, use A-21 copper polishing fluid, polishing condition is: polishing pad is IC pad, and downforce is 2.0psi, and rotating speed is polishing disk/rubbing head=115/110rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
2. on second polishing disk, use barrier polishing solution, polishing condition is: polishing pad is IC pad, and downforce is 2.0psi, and rotating speed is polishing disk/rubbing head=115/110rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
3. on the 3rd polishing disk, use barrier polishing solution, add the benzyl naphthalene sulfonic acid formaldehyde condensation polymer solution of concentration as 10wt% with another charge pipe taking the flow velocity of 75ml/min simultaneously.The same second step of polishing condition.
Embodiment 4 step chemical mechanical polishing methods
Copper polishing fluid: A-21 copper polishing fluid is sold in peace fairground
Barrier polishing solution: 40wt% silicon dioxide, corrosion inhibiter is BTA, and complexing agent is oxalic acid, and oxidant is hydrogen peroxide, and water is surplus, pH=2.0
Silicon nitride inhibitor: eight alkyl phosphate diethanolamine salts
1. on first polishing disk, use A-21 copper polishing fluid, polishing condition is: polishing pad is IC pad, and downforce is 1.0psi, and rotating speed is polishing disk/rubbing head=120/115rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
2. on second polishing disk, use barrier polishing solution, polishing condition is: polishing pad is IC pad, and downforce is 1.0psi, and rotating speed is polishing disk/rubbing head=120/115rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
3. on the 3rd polishing disk, use barrier polishing solution, add the eight alkyl phosphate diethanol amine salting liquids of concentration as 10wt% with another charge pipe taking the flow velocity of 15ml/min simultaneously.The same second step of polishing condition.
Embodiment 5 step chemical mechanical polishing methods
Copper polishing fluid: A-21 copper polishing fluid is sold in peace fairground
Barrier polishing solution: 20wt% silicon dioxide, corrosion inhibiter is BTA, and complexing agent is malonic acid, and PH conditioning agent is nitric acid or potassium hydroxide, and oxidant is hydrogen peroxide, water is surplus, PH=2.0
Silicon nitride inhibitor: 1-isobutyl-3,5-dimethylhexylphosphoric acid triethanolamine salt
1. on first polishing disk, use A-21 copper polishing fluid, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
2. on second polishing disk, use barrier polishing solution, polishing condition is: polishing pad is IC pad, and downforce is 3.0psi, and rotating speed is polishing disk/rubbing head=93/87rpm, polishing fluid flow velocity is 150ml/min, and polishing time is controlled by terminal control system.
3. on the 3rd polishing disk, use barrier polishing solution, add the 1-isobutyl-3,5-dimethylhexylphosphoric acid triethanolamine salting liquid of concentration as 10wt% with another charge pipe taking the flow velocity of 30ml/min simultaneously.The same second step of polishing condition.
Effect embodiment
Adopt the finishing method of comparative example and embodiments of the invention 1～5 to carry out polishing, polish results is as shown in the table.The copper capping layer of TSV graphical wafer is about 50000 dusts, and barrier layer is about 1000 dusts, and dielectric layer is about 5000 dusts.
From comparative example, the removal speed of tantalum of having added the barrier polishing solution of silicon nitride inhibitor is lower, according to three traditional step finishing methods (contrast 1), remove copper in the first step and second step, the 3rd step is removed barrier layer and dielectric layer, when the 3rd step polishing, upper polishing time used is longer, reduce production capacity, even if improve finishing method (contrast 2), in the time of second step and the 3rd step polishing, use barrier polishing solution, although reasonably distributed polishing time, but because the removal speed of the tantalum of barrier polishing solution used is lower, polishing time is still longer, reduce production capacity.Remove the high barrier polishing solution of speed by the tantalum that uses when the second step polishing provided by the invention, the online silicon nitride inhibitor of introducing in the time of the 3rd step polishing, can ensure that second step polishing has the removal speed of very high tantalum, can ensure to be again parked in well on silicon nitride stop-layer in the time of the 3rd step polishing, well control polishing process.Process of the present invention can reasonably be distributed the polishing time of each polishing disk, has reduced polishing time, has improved production capacity.And on second polishing disk and the 3rd polishing disk, use same polishing fluid, very convenient.
Above specific embodiments of the invention be have been described in detail, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and alternative also all among category of the present invention.Therefore, equalization conversion and the amendment done without departing from the spirit and scope of the invention, all should contain within the scope of the invention.
Claims (14)
1. for a process for TSV silicon through hole chemico-mechanical polishing, comprise the following steps:
Steps A: remove copper capping layer effects on surface with copper polishing fluid and carry out planarization;
Step B: remove tantalum barrier layer and part dielectric layer effects on surface with barrier polishing solution and carry out planarization;
Step C: remove dielectric layer and retain silicon nitride layer with the barrier layer chemical mechanical polishing liquid that adds silicon nitride inhibitor, wherein, described silicon nitride inhibitor adds online from a feeder sleeve separately.
2. process as claimed in claim 1, is characterized in that, the copper polishing fluid in described steps A is greater than the removal speed of copper
3. process as claimed in claim 1, is characterized in that, described steps A downforce used is 1.0-3.0psi, and rotating speed is 50-120rpm.
4. process as claimed in claim 1, is characterized in that, described step B downforce used is 1.0-3.0psi, and rotating speed is 50-120rpm.
5. process as claimed in claim 1, is characterized in that, described step C downforce used is 1.0-3.0psi, and rotating speed is 50-120rpm.
6. process as claimed in claim 1, is characterized in that, the barrier polishing solution in described step B comprises a kind of abrasive grains and water.
7. process as claimed in claim 6, is characterized in that, described abrasive grains is silicon dioxide gel.
8. process as claimed in claim 6, is characterized in that, the content of described abrasive grains is 15-40wt%.
9. process as claimed in claim 6, is characterized in that, described barrier polishing solution also comprises corrosion inhibiter, complexing agent and oxidant.
10. process as claimed in claim 9, is characterized in that, the pH value of barrier polishing solution is 2-4.
11. processes as claimed in claim 1, is characterized in that, described silicon nitride inhibitor is naphthalenesulfonate surfactant or phosphoric acid ester surfactant.
12. processes as claimed in claim 11, it is characterized in that, described silicon nitride inhibitor is sodium metnylene bis-naphthalene sulfonate, methyl naphthalene sulfonic acid sodium formaldehyde condensation polymer, benzyl naphthalene sulfonic acid formaldehyde condensation polymer, one or more in alkyl phosphate diethanolamine salt and/or alkyl phosphate triethanolamine salt.
13. processes as claimed in claim 12, is characterized in that, the alkyl carbon atoms number of described alkyl phosphate salt surfactant is selected from 8～12.
14. processes as claimed in claim 11, is characterized in that, the content of described silicon nitride inhibitor is 0.1-0.5wt%.
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| CN201210584555.6A CN103903979A (en) | 2012-12-28 | 2012-12-28 | Chemical mechanical polishing method |
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| CN201210584555.6A CN103903979A (en) | 2012-12-28 | 2012-12-28 | Chemical mechanical polishing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111916342A (en) * | 2017-08-10 | 2020-11-10 | 长江存储科技有限责任公司 | Wafer bonding method and structure thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111916342A (en) * | 2017-08-10 | 2020-11-10 | 长江存储科技有限责任公司 | Wafer bonding method and structure thereof |
| CN111916342B (en) * | 2017-08-10 | 2021-04-16 | 长江存储科技有限责任公司 | Wafer bonding method and structure thereof |
| US11342185B2 (en) | 2017-08-10 | 2022-05-24 | Yangtze Memory Technologies Co., Ltd. | Wafer bonding method and structure thereof |
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Application publication date: 20140702 |