CN108250978A - A kind of chemical mechanical polishing liquid and its application - Google Patents
A kind of chemical mechanical polishing liquid and its application Download PDFInfo
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- CN108250978A CN108250978A CN201611231879.6A CN201611231879A CN108250978A CN 108250978 A CN108250978 A CN 108250978A CN 201611231879 A CN201611231879 A CN 201611231879A CN 108250978 A CN108250978 A CN 108250978A
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- chemical mechanical
- mechanical polishing
- polishing liquid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Abstract
One aspect of the present invention provides a kind of chemical mechanical polishing liquid, and it includes abrasive grains, corrosion inhibitor, complexing agent, oxidants, at least containing a kind of Sulfonates anion surfactant.Another aspect of the present invention provides application of the polishing fluid in metallic copper polishing.The present invention, which realizes, improves the effect of polishing fluid compares the polishing selection of copper and tantalum barrier layer；And the present invention for chip polishing can improve polishing after copper wire dish-like recess (Dishing) and dielectric layer erosion (Erosion), after polishing without copper residue and it is corrosion-free the defects of.
Description
Technical field
The present invention relates to CMP art more particularly to a kind of chemical mechanical polishing liquid and its in polishing metal copper
In application.
Background technology
With the development of semiconductor technology, the microminiaturization of electronic unit is contained in one integrated circuit millions of
Transistor.In the process of running, in the transistor that can be switched rapidly for incorporating such vast number, traditional aluminium or aluminium
Alloy interconnection line so that signal transmission speed reduces, and needs to consume mass energy in electric current transmittance process, in definite meaning
On, also counteract the development of semiconductor technology.In order to further develop, people, which begin look for using, possesses higher electrical properties
Material replaces the use of aluminium.It is well known that the resistance of copper is small, possess good electric conductivity, this increase between transistor in circuit
The transmission speed of signal may also provide smaller parasitic capacitance ability, and small electric road is for the sensibility of electromigration.These electricity
Advantage all causes copper to possess good development prospect in semiconductor technology development.
But it is found in the ic manufacturing process of copper, copper can migrate or diffuse into the transistor area of integrated circuit
Domain has an adverse effect hence for the performance of the transistor of semiconductor, thus the interconnection line of copper can only be manufactured with mosaic technology,
I.e.：Groove is formed in first layer, fills copper barrier layer and copper in the trench, form plain conductor and is covered on the dielectric layer.
Then copper extra on dielectric layer/copper barrier layer is removed by chemically mechanical polishing, single interconnection line is left in groove.Copper
CMP process be generally divided into 3 steps, the 1st step is first with higher lower pressure, with fast and efficient removal speed
Rate removes a large amount of copper on substrate surface and leaves certain thickness copper, and the 2nd step removes remaining metal with relatively low removal rate
Copper is simultaneously parked in barrier layer, and the 3rd step removes barrier layer and part of dielectric layer and metallic copper with barrier polishing solution again, realizes flat
Change.
On the one hand copper polishing will remove copper extra on barrier layer as early as possible, on the other hand to reduce copper wire after polishing as possible
Dish-like recess.Before copper polishing, metal layer has portion concave above copper wire.During polishing, the copper on dielectric material is in main body pressure
(higher) is easy to be removed under power, and the polish pressure suffered by the copper of recess is lower than prevailing pressure, and copper removal rate is small.With
The progress of polishing, the difference in height of copper can be gradually reduced, and reach planarization.But in polishing process, if the change of copper polishing fluid
Effect is too strong, and static etch rate is too high, even if then the passivating film of copper is at low pressures, (such as copper wire recess) is also easy to
It is removed, planarization efficiency is caused to reduce, the dish-like recess increase after polishing.
With the development of integrated circuit, on the one hand, in traditional IC industries, in order to improve integrated level, reduce energy consumption, contracting
Short delaing time, line width is more and more narrow, and dielectric layer uses relatively low low dielectric (low-k) material of mechanical strength, the number of plies of wiring
Also more and more, in order to ensure the performance and stability of integrated circuit, the requirement to copper CMP is also higher and higher.It will
Ask reduces polish pressure in the case of the removal rate for ensureing copper, improves the planarization of copper line surface, control surface defect.Separately
On the one hand, due to physical limitation, line width cannot infinitely reduce, and semicon industry, which is no longer merely relied on one chip, to be collected
Performance is improved into more devices, and turns on multi-chip package.Silicon hole (TSV) technology as it is a kind of by chip and
Between chip, vertical conducting is made between wafer and wafer, the state-of-the-art technology interconnected between chip is realized and obtains industrial quarters
It is widely recognized as.The density that TSV can be such that chip is stacked in three-dimensional is maximum, and appearance and size is minimum, substantially improves chip speed
With the performance of low-power consumption.
Current TSV techniques are to combine traditional IC techniques to form the copper perforation for running through silicon base, i.e., are filled out in TSV openings
It fills copper and realizes conducting, extra copper is also required to reach planarization using chemically mechanical polishing removal after filling.With traditional IC industry
Difference, since silicon hole is very deep, the extra copper of filling rear surface usually has a few to tens of micron of thickness.It is more in order to quickly remove these
Remaining copper.It usually requires with very high copper removal rate, while the surface smoothness after polishing is good.In order to make copper in semiconductor
It is preferably applied in technology, people continuously attempt to the improvement of new polishing fluid.
Chinese patent CN1256765C provides a kind of cheating organic acid buffer body formed containing citric acid, potassium citrate
The polishing fluid of system.CN1195896C, which is used, contains oxidant, carboxylate such as ammonium citrate, abrasive water, a kind of optional triazole
Or the polishing fluid of triazole derivative.CN1459480A provides a kind of chemical mechanical polishing liquid of copper, it comprises film forming agent and
Coalescents：Film forming agent is made of the buffer solution that highly basic and acetic acid mixing form, and coalescents are potassium nitrate (sodium) salt.The U.S.
Patent US552742 provides a kind of chemical mechanical polishing of metals slurry, contains aramid fiber silica including one kind, alkane polysiloxanes, gathers
The surfactant of oxyalkylene ether and its copolymer.US6821897B2 provides a kind of using the throwing containing polymeric complexing agents
The copper chemical mechanical polishing method of photo etching uses the polymer containing negative electrical charge, including thiosulfonic acid and its salt, sulfate,
Phosphoric acid, phosphate, phosphate etc..And US5527423 chemical mechanical polishing of metals slurries, including a kind of surfactant：Aramid fiber
Siloxanes, polysiloxanes, polyoxyalkylene ether and its copolymer.Chinese patent CN1334961A provides one kind and contains oxidized metal
The polishing liquid for metal of the dissolution aids of lytic agent, protective film forming agent and the protective film forming agent, wherein, protective agent forming agent
Dissolution aids are one or more for the surfactants such as polycarboxylic acid salt, polyvinyl, sulfonic acid, sulfonate and amide.
The dissolution aids are used for improving the solubility performance of protective film forming agent.A kind of throwing is provided in Chinese patent CN101418187A
Light liquid, wherein addition cationic surfactant (polyethyleneimine), quaternary ammonium salt cationic surfactant (cetyl trimethyl chlorine
Change ammonium) and nonionic surface active agent (polyethylene glycol), the removal rate of barrier layer Ta/TaN can be reduced.
And it is of the invention then be directed to a kind of chemical mechanical polishing liquid, pass through nitrogen of the addition without phenyl ring in polishing fluid
The combination of azole corrosion inhibitor and Sulfonates anion surfactant maintains the high removal rate of copper, reduces tantalum
The removal rate on barrier layer, so as to fulfill improve polishing fluid to the polishing of copper and tantalum barrier layer selection than while, improve and throw
The dish-like recess (Dishing) of copper wire and dielectric layer corrode (Erosion) after light, and are lacked after polishing without copper residual and corrosion etc.
It falls into.
Invention content
Specifically, one aspect of the present invention is to provide a kind of chemical mechanical polishing liquid, and it includes abrasive grains, corrosion inhibits
Agent, complexing agent, oxidant and at least one Sulfonates anion surfactant.
Wherein, the Sulfonates anion surfactant is alkylsulfonate, alkylaryl sulfonates.
Preferably, the alkylsulfonate be C10~C18 alkylsulfonate, the alkylaryl sulfonates be containing
Have an alkylbenzenesulfonate of C12~C18, poly styrene sulfonate that the degree of polymerization is 200~600,4- vinylbenzenesulfonic acids salt and
Methylene dinaphthalene sulfonate, the salt are sylvite and sodium salt.
Preferably, the sulfonic acid analog anion surfactants content is 0.001~0.5wt%；Preferably, the sulfonic acid
Analog anion surfactants content is 0.005~0.1wt%.
Preferably, the abrasive grains are silicon dioxide gel.
Preferably, the grain size of the abrasive grains is 20~150nm；Preferably, the grain size of the abrasive grains for 50~
120nm。
Preferably, a concentration of 0.05~2wt% of the abrasive grains.Preferably, the abrasive grains is a concentration of
0.1~1wt%.
Preferably, the complexing agent is ammonia carboxylic compound and its salt.Preferably, the ammonia carboxylic compound and its salt are sweet ammonia
Acid, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, silk
Propylhomoserin, aspartic acid, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediamine tetra-acetic acid, 1,2-diaminocyclohexane tetraacetic acid,
It is one or more in ethylenediamine disuccinic acid, diethylene triamine pentacetic acid (DTPA) and triethylenetetramine hexaacetic acid.
Preferably, a concentration of 0.1~5wt% of the complexing agent；Preferably, a concentration of the 0.5 of the complexing agent~
3wt%.
Preferably, the corrosion inhibitor is one or more in the nitrogen azole compounds without phenyl ring.Specially：
1,2,4- triazole, 3- amino -1,2,4- triazoles, 4- amino -1,2,4- triazoles, 3,5- diaminostilbenes, 2,4- triazoles,
5- carboxyl -3- amino -1,2,4- triazoles, 3- amino -5- sulfydryls -1,2,4- triazoles, 5- acetic acid -1H- tetrazoles, 5- methyl
It is one or more in tetrazole and 5- amino -1H- tetrazoles.
Preferably, the corrosion inhibitor concentration is 0.001~2wt%；Preferably, the corrosion inhibitor concentration is
0.005~1wt%.
Preferably, the oxidant is hydrogen peroxide.
Preferably, a concentration of 0.05~5wt% of the oxidant；Preferably, a concentration of the 0.1 of the oxidant~
3wt%.
Preferably, the pH of the chemical mechanical polishing liquid is 5~8.
In addition, pH adjusting agent, viscosity modifier, antifoaming agent are further included in the polishing fluid.
Also, the polishing fluid can concentrate preparation, be diluted when in use with deionized water and add oxidant extremely
The concentration range of the present invention uses.
Another aspect of the present invention is to provide a kind of above-mentioned chemical mechanical polishing liquid answering in the polishing of metallic copper
With.
Compared with prior art, advantage of the invention is that：
1) present invention addition in polishing fluid is free of the nitrogen azole corrosion inhibitor of phenyl ring and Sulfonates anionic surface
The combination of activating agent maintains the high removal rate of copper, reduces the removal rate of tantalum barrier layer, realizes and improves polishing fluid pair
The effect of polishing selection of copper and tantalum barrier layer is compared；
2) polishing of the invention for chip can improve the dish-like recess (Dishing) of copper wire and dielectric layer erosion after polishing
(Erosion), and polish after without copper residue and it is corrosion-free the defects of.
Description of the drawings
Fig. 1 is that copper wire width is 5 microns in copper graphic chips after being polished using comparative example 1, and dielectric material width is 1 micron
Close linear array area surface topography map；
Fig. 2 be using embodiment 28 polish after copper graphic chips in copper wire width be 5 microns, dielectric material width be 1 micron
Close linear array area surface topography map.
Specific embodiment
Examples 1 to 27
Table 1 gives the Examples 1 to 27 of the chemical mechanical polishing liquid of the present invention, is formulated by given in table, will remove oxidation
Other components other than agent are uniformly mixed, and mass percent is supplied to 100% with water.With KOH or HNO3It adjusts required
PH value.Using preceding oxidizer, it is uniformly mixed.
1 Examples 1 to 27 of table
Effect example
Table 2 gives the embodiment 28~37 of chemical mechanical polishing liquid of the present invention and comparative example 1~4, by table
Formula is given, the other components in addition to oxidant are uniformly mixed, mass percent is supplied to 100% with water.With KOH or
HNO3Adjust required pH value.Using preceding oxidizer, it is uniformly mixed, it is as follows obtains specific embodiment.
2 comparative example 1~4 of table and embodiment 28~37
Using comparison polishing fluid and the present invention polishing fluid 28~37 according to following conditions to empty piece copper (Cu), tantalum (Ta) into
Row polishing.Specific polishing condition：Pressure 1.5psi and/or 2.0psi；Polishing disk and rubbing head rotating speed 73/67rpm, polishing pad
IC1010 polishes flow velocity 350ml/min, polishing machine platform 12 " Reflexion LK, polishing time 1min.
The copper wafer containing figure is polished according to following conditions using the polishing fluid of comparison polishing fluid and the present invention.It throws
Striation part：Polishing disk and rubbing head rotating speed 73/67rpm, polishing pad IC1010, polish flow velocity 350ml/min, and polishing machine platform is
12”Reflexion LK.With the figuratum copper chip of lower press polish of 2psi to remaining copper about 3000A on polishing disk 1, so
Remaining copper is removed with the lower pressure of 1.5psi on polishing disk 2 again afterwards.There is pattern with XE-300P atomic force microscope measurements
Copper chip on 5um/1um (copper wire/dielectric material line width) copper wire array area dish-like recess value (Dishing) and dielectric layer
It corrodes (Erosion), as a result such as table 3：
Table 3 compares the polishing effect of polishing fluid 1~4 and polishing fluid 28~37 of the present invention
As can be seen from Table 3：It is of the invention to be added in polishing fluid containing Sulfonates the moon compared with comparative example 1
Ionic surface active agent can reduce the removal rate ratio of tantalum, substantially increase while the removal rate for maintaining higher copper
Cu/Ta removal selection ratios, therefore dish-like recess value and dielectric layer erosion value after graphic chips polishing are significantly reduced, and it is right
Even if ratio 1 adds more corrosion inhibitor, the removal rate of tantalum can not be effectively inhibited, leads to saucerization and Jie
Matter layer erosion value is higher.
Fig. 1 and Fig. 2 is further regarded to, is respectively in the copper graphic chips after being polished using comparative example 1 and embodiment 28
Copper wire width is 5 microns, and dielectric material width is 1 micron of close linear array area surface topography map.It can be seen from the figure that use comparison
Example 1 is used as polishing fluid, and there are the dish-like recess of 89.2 nanos and the erosion of 57.5 nanometers of dielectric layer for the copper wire after polishing；And
Using the present embodiment 28 as polishing fluid, the dish-like recess of copper wire after polishing is reduced to 25 nanometers, and dielectric layer erosion is down to 4.2 and is received
Rice, polishing fluid of the invention is to the attenuating effect highly significant of the erosion of the particularly dielectric layer of the surface topography after polishing.Meanwhile
It 28 can be found compared with the component of comparative example 2 in conjunction with the embodiments, azole corrosion inhibitor benzotriazole of the selection with phenyl ring
With the combination of Sulfonates anion surfactant, although the removal rate of tantalum can be reduced, the removal of copper is greatly suppressed
Rate can not effectively remove copper removal.Compared with the embodiment of the present invention 28, comparative example 3 and 4 adds in the azole employed without phenyl ring
The combination of corrosion inhibitor and Sulfonates anion surfactant, but the pH value of comparative example 3 is too low, the removal speed of copper and tantalum
Rate is also higher, causes dish-like recess and dielectric layer erosion larger.And the pH value of comparative example 4 is excessively high, leads to the removal rate of copper
It substantially reduces, copper can not be effectively removed.
In conclusion the present invention in polishing fluid addition without phenyl ring nitrogen azole corrosion inhibitor and Sulfonates the moon from
The combination of sub- surfactant maintains the high removal rate of copper, reduces the removal rate of tantalum barrier layer, realizes raising and throws
The effect of light liquid compares the polishing selection of copper and tantalum barrier layer；The present invention can improve the dish of copper wire after polishing for the polishing of chip
Be recessed (Dishing) and dielectric layer of type corrodes (Erosion), and after polishing without copper residue and it is corrosion-free the defects of.
Specific embodiments of the present invention are described in detail above, but it is intended only as example, it is of the invention and unlimited
It is formed on particular embodiments described above.To those skilled in the art, it is any to the equivalent modifications that carry out of the present invention and
It substitutes also all among scope of the invention.Therefore, the impartial conversion made without departing from the spirit and scope of the invention and
Modification, all should be contained within the scope of the invention.
Claims (23)
1. a kind of chemical mechanical polishing liquid includes abrasive grains, corrosion inhibitor, complexing agent, oxidant and at least one sulfonic acid
Salt analog anion surfactants.
2. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the Sulfonates anion surfactant
For alkylsulfonate and/or alkylaryl sulfonates.
3. chemical mechanical polishing liquid as claimed in claim 2, which is characterized in that the alkylsulfonate is the alkane of C10~C18
Base sulfonate, the alkylaryl sulfonates are the alkylbenzenesulfonate of C12~C18, and the degree of polymerization is 200~600 polyphenyl second
Alkene sulfonate, 4- vinylbenzenesulfonic acids salt and methanonaphthalene sulfonate, wherein, the salt is sylvite and/or sodium salt.
4. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the sulfonic acid analog anion surfactants contain
It measures as 0.001~0.5wt%.
5. chemical mechanical polishing liquid as claimed in claim 4, which is characterized in that the sulfonic acid analog anion surfactants contain
It measures as 0.005~0.1wt%.
6. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the abrasive grains are silicon dioxide gel.
7. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the grain size of the abrasive grains for 20~
150nm。
8. chemical mechanical polishing liquid as claimed in claim 7, which is characterized in that the grain size of the abrasive grains for 50~
120nm。
9. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the content of the abrasive grains for 0.05~
2wt%.
10. chemical mechanical polishing liquid as claimed in claim 9, which is characterized in that a concentration of the 0.1 of the abrasive grains~
1wt%.
11. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the complexing agent for ammonia carboxylic compound and its
Salt.
12. chemical mechanical polishing liquid as claimed in claim 11, which is characterized in that the complexing agent is selected from glycine, the third ammonia
Acid, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, day
Winter propylhomoserin, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediamine tetra-acetic acid, 1,2-diaminocyclohexane tetraacetic acid, ethylenediamine two
It is one or more in succinic acid, diethylene triamine pentacetic acid (DTPA) and triethylenetetramine hexaacetic acid.
13. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the complexing agent content is 0.1~5wt%.
14. chemical mechanical polishing liquid as claimed in claim 13, which is characterized in that the complexing agent content for 0.5~
3wt%.
15. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the corrosion inhibitor is without phenyl ring
It is one or more in nitrogen azole compounds.
16. chemical mechanical polishing liquid as claimed in claim 15, which is characterized in that the corrosion inhibitor is selected from 1,2,4- tri-
Nitrogen azoles, 3- amino -1,2,4- triazoles, 4- amino -1,2,4- triazoles, 3,5- diaminostilbenes, 2,4- triazoles, 5- carboxyls -
3- amino -1,2,4- triazoles, 3- amino -5- sulfydryls -1,2,4- triazoles, 5- acetic acid -1H- tetrazoles, 5- methyl tetrazoles
With it is one or more in 5- amino -1H- tetrazoles.
17. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the content of the corrosion inhibitor is 0.001
~2wt%.
18. chemical mechanical polishing liquid as claimed in claim 17, which is characterized in that the content of the corrosion inhibitor is
0.005~1wt%.
19. chemical mechanical polishing liquid as described in claim 1, which is characterized in that the oxidant is hydrogen peroxide.
20. chemical mechanical polishing liquid as described in claim 1, which is characterized in that a concentration of the 0.05 of the oxidant~
5wt%.
21. chemical mechanical polishing liquid as claimed in claim 20, which is characterized in that a concentration of the 0.1 of the oxidant~
3wt%.
22. the chemical mechanical polishing liquid as described in claim 1~21 is any, which is characterized in that the chemical mechanical polishing liquid
PH be 5~8.
23. a kind of application of chemical mechanical polishing liquid as described in claim 1~22 in the polishing of metallic copper.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611231879.6A CN108250978A (en) | 2016-12-28 | 2016-12-28 | A kind of chemical mechanical polishing liquid and its application |
| PCT/CN2017/094322 WO2018120811A1 (en) | 2016-12-28 | 2017-07-25 | Chemical-mechanical polishing solution and application thereof |
| TW106133680A TWI780075B (en) | 2016-12-28 | 2017-09-29 | Chemical mechanical polishing slurry and applications thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611231879.6A CN108250978A (en) | 2016-12-28 | 2016-12-28 | A kind of chemical mechanical polishing liquid and its application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108250978A true CN108250978A (en) | 2018-07-06 |
Family
ID=62710237
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611231879.6A Pending CN108250978A (en) | 2016-12-28 | 2016-12-28 | A kind of chemical mechanical polishing liquid and its application |
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| Country | Link |
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| CN (1) | CN108250978A (en) |
| TW (1) | TWI780075B (en) |
| WO (1) | WO2018120811A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2019129105A1 (en) * | 2017-12-27 | 2019-07-04 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid |
| CN109972145A (en) * | 2017-12-27 | 2019-07-05 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
| CN110862772A (en) * | 2019-10-23 | 2020-03-06 | 宁波日晟新材料有限公司 | High-efficiency silica sol polishing solution not easy to crystallize and easy to clean and preparation method thereof |
| CN111378376A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111378378A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and application thereof |
| CN113122142A (en) * | 2019-12-31 | 2021-07-16 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN115537123A (en) * | 2022-11-09 | 2022-12-30 | 博力思(天津)电子科技有限公司 | Chemical mechanical polishing solution for polyether-ether-ketone material |
| CN113122142B (en) * | 2019-12-31 | 2024-04-12 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
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| CN114106706B (en) * | 2021-12-24 | 2022-12-20 | 博力思(天津)电子科技有限公司 | Copper interconnection polishing solution with pressure buffering effect and preparation method of abrasive thereof |
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| CN110862772B (en) * | 2019-10-23 | 2021-04-20 | 宁波日晟新材料有限公司 | High-efficiency silica sol polishing solution not easy to crystallize and easy to clean and preparation method thereof |
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| CN115537123A (en) * | 2022-11-09 | 2022-12-30 | 博力思(天津)电子科技有限公司 | Chemical mechanical polishing solution for polyether-ether-ketone material |
| CN115537123B (en) * | 2022-11-09 | 2023-08-15 | 博力思(天津)电子科技有限公司 | Chemical mechanical polishing solution for polyether-ether-ketone material |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201824381A (en) | 2018-07-01 |
| TWI780075B (en) | 2022-10-11 |
| WO2018120811A1 (en) | 2018-07-05 |
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