WO2017114301A1

WO2017114301A1 - Chemical and mechanical polishing slurry for metal

Info

Publication number: WO2017114301A1
Application number: PCT/CN2016/111684
Authority: WO
Inventors: 张建; 荆建芬; 宋凯
Original assignee: 安集微电子科技(上海)有限公司
Priority date: 2015-12-31
Filing date: 2016-12-23
Publication date: 2017-07-06
Also published as: CN106929858A; TW201723112A

Abstract

The present invention provides a chemical and mechanical polishing slurry for copper, and applications thereof. The slurry comprises: (a) grinding particles, (b) a complexing agent, (c) an oxidant, (d) a corrosion inhibitor, and (e) a phosphate surfactant. By using the slurry of the present invention, a high copper removal rate can be maintained, dishing depressions, over-polishing windows and other defects of a polished copper wire are alleviated, there is less dirt on a polished copper surface, and no corrosion occurs.

Description

Metal chemical mechanical polishing slurry

Technical field

The present invention relates to a chemical mechanical polishing slurry and its use, and more particularly to a chemical mechanical polishing slurry for copper and its use.

Background technique

With the development of semiconductor technology and the miniaturization of electronic components, an integrated circuit contains millions of transistors. The operation process integrates such a large number of transistors that can be quickly switched. The use of traditional aluminum or aluminum alloy interconnects leads to a reduction in signal transmission speed and a large amount of energy is required in the current transfer process, which in the sense also hinders the semiconductor. The development of technology. In order to further develop, people began to look for the use of materials with higher electrical properties instead of aluminum. It is well known that copper has low electrical resistance and good electrical conductivity, which speeds up the transmission of signals between transistors in a circuit, and also provides a smaller parasitic capacitance capability, reducing the sensitivity of the circuit to electromigration. These electrical advantages have made copper show good development prospects in the development of semiconductor technology.

However, in the copper integrated circuit manufacturing process, we found that copper migrates or diffuses into the transistor region of the integrated circuit, which adversely affects the performance of the semiconductor transistor. Therefore, the copper interconnect can only be fabricated by a damascene process, that is, : forming a trench in the first layer, filling the trench with a copper barrier layer and copper, forming a metal wire and covering the dielectric layer. The excess copper/copper barrier on the dielectric layer is then removed by chemical mechanical polishing leaving a single interconnect in the trench. The chemical mechanical polishing process of copper is generally divided into three steps. The first step is to remove a large amount of copper on the surface of the substrate with a high and low pressure at a high and low removal rate. The second step is to approach the barrier layer. When the downforce is lowered, the removal rate is reduced to polish the remaining metal copper and stopped in the barrier layer. In the third step, the barrier layer polishing solution is used to remove the barrier layer and part of the dielectric layer and the metal copper to achieve planarization.

On the one hand, copper polishing should remove excess copper on the barrier layer as soon as possible. On the other hand, the butterfly depression of the polished copper wire should be minimized. Prior to copper polishing, the metal layer is partially recessed above the copper wire. When polishing, The copper on the dielectric material is easily removed at higher bulk pressures, while the copper at the depressions is subjected to a lower polishing pressure than the bulk pressure and a lower copper removal rate. As the polishing progresses, the height difference of the copper is gradually reduced to achieve flattening. However, during the polishing process, if the chemical action of the copper polishing solution is too strong and the static etching rate is too high, the passivation film of copper is easily removed even at a lower pressure (such as a copper line depression), resulting in planarization efficiency. Reduced, the polished butterfly depression increases.

With the development of integrated circuits, on the one hand, in the traditional IC industry, in order to improve integration, reduce energy consumption, shorten delay time, line width is narrower, and the number of layers of wiring is also increasing, in order to ensure integration. The performance and stability of the circuit, the requirements for copper chemical mechanical polishing are also getting higher and higher. It is required to reduce the polishing pressure while ensuring the removal rate of copper, improve the flattening of the surface of the copper wire, and control surface defects. On the other hand, due to physical limitations, the linewidth cannot be reduced indefinitely, and the semiconductor industry no longer relies on integrating more devices on a single chip to improve performance, but instead shifts to multi-chip packages. Through-silicon via (TSV) technology is widely recognized in the industry as the latest technology for interconnecting between chips and chips, and between wafers and wafers to achieve interconnection between chips. TSV enables the chip to be stacked in the three-dimensional direction with the highest density and smallest form factor, greatly improving chip speed and low power consumption. The current TSV process combines a conventional IC process to form copper vias through a silicon substrate, that is, copper is filled in the TSV opening to achieve conduction, and excess copper after filling needs to be removed by chemical mechanical polishing to achieve planarization. Unlike the traditional IC industry, the excess copper in the surface after filling is usually several to several tens of micrometers thick due to the deep through-silicon via. In order to quickly remove these extra copper. It is usually required to have a high copper removal rate while the surface roughness after polishing is good. In order to make copper better in semiconductor technology, people are constantly trying to improve the new polishing solution.

Chinese patent CN1256765C provides a polishing liquid containing citric acid, potassium citrate and a chelate organic acid buffer system. CN1195896C employs a polishing liquid containing an oxidizing agent, a carboxylate such as ammonium citrate, an abrasive slurry, an optional triazole or triazole derivative. CN1459480A provides a copper chemical mechanical polishing liquid comprising a film forming agent and a film forming aid: the film forming agent is composed of a buffer solution composed of a mixture of a strong base and acetic acid, and the film forming aid is potassium nitrate (sodium) salt. . U.S. Patent No. 5,552,742 provides a metal chemical mechanical polishing slurry comprising a surfactant comprising aramid silicone, an alkane polysiloxane, a polyoxyalkylene ether and copolymers thereof. US6821897B2 provides a use of poly A copper chemical mechanical polishing method for a polishing agent of a complexing agent, which employs a negatively charged polymer including sulfuric acid and salts thereof, sulfates, phosphoric acid, phosphates, phosphates and the like. The US5527423 metal chemical mechanical polishing slurry comprises one or more of a surfactant: aramid siloxane, polysiloxane, polyoxyalkylene ether and copolymers thereof.

The technology in the above patents strives to reduce pitting and corrosion of the copper layer during the polishing process of copper, control the static etching rate, thereby better removing the copper layer, improving the polishing rate of copper, and obtaining good copper mutuality. Even flat. The above patent overcomes the problems encountered by the above copper in the polishing process to a certain extent, but the effect is not obvious. After use, there are defects on the copper surface, the flatness is low, and the polished copper wire has a dish-shaped depression and a large The problem of narrow window throwing; the polishing rate is not high enough to be applied to processes requiring higher removal rates.

Summary of the invention

The invention provides a metal chemical mechanical polishing slurry, wherein a surfactant containing phosphate as a main component is added to the polishing slurry, which can maintain a high polishing rate of copper and reduce the dishing of the copper after polishing. It improves the flatness of the surface, strengthens the polishing effect, and has fewer defects on the copper surface after polishing, and has no defects such as corrosion.

The metal chemical mechanical polishing slurry of the invention achieves its purpose by the following technical solutions:

A metal chemical mechanical polishing slurry comprising abrasive particles, a complexing agent, a corrosion inhibitor, an oxidizing agent and a phosphate surfactant, wherein the phosphate surfactant is a phosphate monoester compound and a phosphoric acid ester One or more of the compositions of the class of compounds. Wherein, the mass percentage of the phosphate monoester compound and the phosphodiester compound is 70:30-30:70. The structural formula of the phosphoric acid monoester compound is as shown in 1, and the structural formula of the phosphodiester compound is as shown in 2:

Wherein X=RO, RO-(CH ₂ CH ₂ O) _n , RCOO-(CH ₂ CH ₂ O) _n ; R is a glyceryl group or a C8-C22 alkyl group, an alkylbenzene group, etc.; n=2-30, M = H, K, NH ₄ , Na or (CH ₂ CH ₂ O) _{1 to 3} NH _{3 to 1} .

Wherein, when R is a C ₈ -C ₂₂ alkyl group, the phosphate surfactant is polyoxyethylene ether phosphate or a salt thereof, preferably dodecyl polyoxyethylene ether phosphate, dodecane Polyoxyethylene ether phosphate potassium salt, octadecyl polyoxyethylene ether phosphate, octadecyl polyoxyethylene ether phosphate potassium salt. When R is an alkylbenzene, the surfactant is an alkylphenol ethoxylate phosphate or a salt thereof, preferably octylphenol ethoxylate phosphate, nonylphenol ethoxylate phosphate, octadecane Sodium phenol polyoxyethylene ether phosphate sodium salt.

The metal chemical mechanical polishing slurry described above, wherein the phosphate surfactant is contained in an amount of 0.0005 to 1% by mass, preferably 0.001 to 0.5% by mass.

The metal chemical mechanical polishing slurry of the present invention, wherein the abrasive particles are one of silica, alumina, doped aluminum or aluminum-coated silica, ceria, titania, and polymer abrasive particles or A variety.

The metal chemical mechanical polishing slurry described above, wherein the abrasive particles have a particle diameter of 20 to 200 nm, and the abrasive particles have a comparative area of 5 to 1000 m ² /g.

The metal chemical mechanical polishing slurry of the present invention, wherein the abrasive particles are contained in an amount of 0.1 to 20% by mass.

The metal chemical mechanical polishing slurry of the present invention, wherein the complexing agent is one of an amino acid and a salt thereof, an aminocarboxylic acid compound and a salt thereof, an organic carboxylic acid and a salt thereof, an organic phosphonic acid and a salt thereof, and an organic amine Or several. Wherein the amino acid is glycine, alanine, valine, leucine, valine, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine , aspartic acid, threonine, glutamic acid, asparagine, glutamine; the aminocarboxylate compound and its salt are ammonia triacetic acid, ethylenediaminetetraacetic acid, cyclohexanediaminetetraacetic acid, ethylene One or more of amine disuccinic acid, diethylene triamine penta acetic acid and triethylene tetraamine hexaacetic acid; the organic carboxylic acid is acetic acid, oxalic acid, citric acid, tartaric acid, malonic acid, succinic acid, apple One or more of acid, lactic acid, gallic acid and sulfosalicylic acid; the organic phosphoric acid is 2-phosphonic acid butane-1,2,4-tricarboxylic acid, aminotrimethylene phosphonic acid, hydroxyl group Ethyldiphosphonic acid, ethylenediaminetetramethylenephosphonic acid, diethylenetriamine pentamethylphosphonic acid, 2-hydroxyphosphonic acid, ethylenediaminetetramethylenephosphonic acid and polyaminopolyether methylphosphine One or several of the acids; The amine is one or more of ethylenediamine, diethylenetriamine, pentamethyldiethylenetriamine, polyethenepolyamine, triethylenetetramine, and tetraethylenepentamine. Among them, the amino acid salt, the aminocarboxylate compound salt, the organic carboxylate, and the organic phosphonate are potassium salts, sodium salts or ammonium salts.

The metal chemical mechanical polishing slurry described above, wherein the complexing agent is contained in an amount of 0.05 to 10% by mass. Preferably, the mass percentage is 0.1-5%

The metal chemical mechanical polishing slurry of the present invention, wherein the oxidizing agent is hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, persulfate, percarbonate, periodic acid, perchloric acid, One or more of high boronic acid, potassium permanganate, and ferric nitrate. Wherein, the content of the oxidizing agent is 0.05-10% by mass.

The metal chemical mechanical polishing slurry of the present invention, wherein the corrosion inhibitor is one or more of a azole, an imidazole, a thiazole, a pyridine, and a pyrimidine compound. Among them, the azole compound is benzotriazole, 5-methylbenzotriazole, 5-carboxybenzotriazole, 1-hydroxy-benzotriazole, 1,2,4-triazo Oxazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 5-carboxyl -3-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazolium One or more of 5-phenyltetrazolium, 5-amino-1H-tetrazole and 1-phenyl-5-mercapto-tetrazole; the imidazole compound is benzimidazole, 2 One or more of - mercaptobenzimidazole. The thiazole compound is one or more of 2-mercapto-benzothiazole, 2-mercaptothiadiazole and 5-amino-2-mercapto-1,3,4-thiadiazole; the pyridine It is one or more of 2,3-diaminopyridine, 2-aminopyridine and 2-picolinic acid; the pyrimidine is a 2-aminopyrimidine.

The metal chemical mechanical polishing slurry described above, wherein the corrosion inhibitor is contained in an amount of 0.001 to 2% by mass, preferably 0.005 to 1% by mass.

The metal chemical mechanical polishing slurry of the present invention has a pH of from 3 to 11, preferably from 4 to 8.

The above metal chemical mechanical polishing slurry further includes a conventional additive in the field such as a pH adjuster, a viscosity modifier, an antifoaming agent, and a bactericide.

When the above metal chemical mechanical polishing slurry is prepared, other components other than the oxidizing agent can be prepared The sample is concentrated and diluted with deionized water to the concentration range of the present invention before use and an oxidizing agent is added.

Use of the metal chemical mechanical polishing slurry of the present invention in chemical mechanical polishing of a substrate containing copper. The advantages of using the metal chemical mechanical polishing slurry of the present invention are as follows:

1. By adding a phosphate surfactant, the polishing slurry of the present invention has a reduced copper removal rate at a low pressure, and still has a high copper removal rate under high pressure, thereby increasing the productivity.

2. The metal chemical mechanical polishing slurry of the present invention enhances the polishing effect of copper, reduces the butterfly depression of the polished copper wire, and improves the over-throwing window.

DRAWINGS

1A and 1B are scanning electron micrographs of a copper wafer surface polished by the polishing slurry of the present invention.

2A and 2B are scanning electron micrographs of the surface of a copper wafer polished and immersed by the polishing slurry of the present invention.

detailed description

The invention is further illustrated by the following detailed description.

Examples 1 to 49

Table 1 shows Examples 1 to 49 of the chemical mechanical polishing liquid of the present invention. According to the formulation given in the table, the components other than the oxidizing agent were uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH or HNO ₃ . Add oxidizing agent before use and mix well.

Table 1 Examples 1 to 49

Effect embodiment

Table 2 shows Examples 50 to 71 and Comparative Examples 1 to 9 of the chemical mechanical polishing liquid of the present invention, according to the formulation given in the table, the components other than the oxidizing agent were uniformly mixed, and the mass percentage was made up to 100 by water. %. Adjust to the desired pH with KOH or HNO ₃ . Add oxidizing agent before use and mix well.

Table 2 Comparative Examples 1 to 9 and Examples 50 to 71

The copper (Cu) wafer and the patterned copper wafer are polished using the comparative polishing liquids 1 to 8 and the polishing liquids 50 to 65 of the present invention. The removal rate of the obtained copper is shown in Table 3. The polishing conditions of the pattern wafer and the butterfly dishing value and copper residue of the copper block are shown in Table 4.

Empty copper wafer polishing conditions: downforce 1 to 3 psi; polishing disc and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing liquid flow rate 150 ml/min, polishing machine 8" Mirra.

Patterned copper wafer polishing process conditions: polishing disc and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing liquid flow rate 150 ml/min, polishing machine table 8" Mirra. Polished on the polishing disc 1 with corresponding downforce The patterned copper wafer was left to residual copper of about 3000 A, and then the residual copper was removed and polished for 20 seconds on the polishing disk 2 with a corresponding downforce. The patterned copper wafer was measured by XE-300P atomic force microscope at 80 um*80 um. Butterfly trap value of copper block, observe the patterned copper after polishing The residual copper on the wafer is shown in Table 4.

Table 3 Copper removal rate at different polishing pressures of the polishing solution

Table 4: Butterfly depressions at 80um*80um copper block and copper residue after polishing under different polishing conditions of patterned copper wafers

It can be seen from Tables 3 and 4 that the removal rate of the comparative polishing liquid 3 to which the phosphoric acid monoester compound is added is greatly reduced as compared with the comparative polishing liquid 1 to 2, the copper cannot be effectively removed, and the phosphodiester compound is added. The removal rate of the comparative polishing liquid 4 is substantially constant, so that the butterfly depression of the polished copper cannot be lowered. Comparing the polishing solution 5 with a phosphate compound with a ratio of mono- and di-ester compounds of 80:20, the copper removal rate and the butterfly-shaped depression are reduced, but after polishing, the pattern wafer has copper residue, which will affect the wafer's electricity. Performance and yield. Comparing the polishing liquid 6 with a phosphate compound having a mono-diester compound ratio of 20:80, although a high copper removal rate can be maintained, the reduction of the butterfly-shaped depression is not very effective. In the metal chemical mechanical polishing slurry 50-65 of the present invention, the addition of a monoester diester compound having a mass percentage of 70:30 to 30:70 phosphate ester surfactant can effectively reduce the removal rate of copper under low pressure. And has little effect on the removal rate under higher downforce. This property allows the polishing liquid to obtain a smoother polishing surface while maintaining a higher removal rate, which greatly improves the production efficiency, and reduces the butterfly depression value of the polished copper block, and the polished crystal is polished. There is no copper residue on the round surface (see Table 4).

The patterned wafer polished in Example 57 was immersed in the polishing solution for 30 minutes, and the surface condition of the copper wire before the immersion (after polishing) and after immersion was observed by a scanning electron microscope, see FIGS. 1A, 1B, 2A, 2B. It can be seen from the figure that the surface of the wafer polished by the polishing liquid has no corrosion and no defects. After immersing in the polishing solution for 30 minutes, the copper wire still has no obvious corrosion and defects, indicating that the polishing liquid of the present invention has a strong ability to inhibit metal corrosion.

The copper (Cu) wafer, the empty silicon dioxide wafer, the empty wafer wafer, and the patterned copper wafer are polished using the comparative polishing liquid 9 and the polishing liquids 66 to 71 of the present invention. Polished rate And the butterfly depression value of the copper block is shown in Table 5.

Empty sheet polishing conditions: lower pressure 1 to 3 psi; polishing disc and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing liquid flow rate 150 ml/min, polishing machine table 8" Mirra.

Patterned copper wafer polishing process conditions: polishing disk and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing liquid flow rate 150ml/min, polishing machine table 8" Mirra. Polished on the polishing plate 1 with 3psi under pressure The patterned copper wafer was left to about 5000 A of residual copper, and then the residual copper was removed by a 2 psi downforce on the polishing pad 2. The patterned copper wafer was measured on a patterned copper wafer by XE-300P atomic force microscope (copper wire/dioxide) Butterfly trap value at the copper wire of silicon).

Table 5: Blank removal rate of polishing solution and polishing condition of patterned copper wafer and butterfly depression value after polishing

As can be seen from Table 5, the metal chemical mechanical polishing slurry 66-68 of the present invention can achieve a smoother polished surface while maintaining a higher removal rate than the comparative polishing liquid 9, by Example 69. ～71 can be seen that the polishing solution can also provide a higher removal rate of silicon dioxide and germanium while the copper removal rate is adjustable. The polishing solution can meet different application needs.

It should be understood that the wt% of the present invention refers to the mass percentage.

The specific embodiments of the present invention have been described in detail above, but are merely exemplary, and the invention is not limited to the specific embodiments described above. Any equivalent modifications and substitutions to the invention are also within the scope of the invention. Accordingly, equivalents and modifications may be made without departing from the spirit and scope of the invention.

Claims

A metal chemical mechanical polishing slurry comprising abrasive particles, a complexing agent, a corrosion inhibitor, an oxidizing agent and a phosphate surfactant, wherein the phosphate surfactant is a phosphate monoester compound and phosphoric acid One or more of the compositions of the diester compound, wherein the mass percentage of the phosphoric acid monoester compound and the phosphoric acid diester compound is from 30:70 to 70:30.
The metal chemical mechanical polishing slurry according to claim 1, wherein the phosphate monoester compound has the structural formula of Formula 1, and the phosphodiester compound has the structural formula of Formula 2

Wherein: X = RO, RO-(CH 2 CH 2 O) n , RCOO-(CH 2 CH 2 O) n ; R is a glyceryl group or a C8-C22 alkyl group or an alkylbenzene, n = 2 to 30, M = H, K, NH 4 , Na, (CH 2 CH 2 O) 1 to 3 NH 3 to 1 .
The metal chemical mechanical polishing slurry according to claim 2, wherein the phosphoric acid monoester compound and the phosphoric acid diester compound are one or more of polyoxyethylene ether phosphate and a salt thereof, and the alkylphenol polyoxygen One or more of vinyl ether phosphate and its salt.
The metal chemical mechanical polishing slurry according to claim 3, wherein the polyoxyethylene ether phosphate and a salt thereof are dodecyl polyoxyethylene ether phosphate, potassium dodecyl polyoxyethylene ether phosphate, Octadecyl polyoxyethylene ether phosphate, octadecyl polyoxyethylene ether phosphate potassium salt; the alkylphenol polyoxyethylene ether phosphate and its salt are octylphenol polyoxyethylene ether phosphate, hydrazine Phenolic polyoxyethylene ether phosphate, octadecyl phenol polyoxyethylene ether phosphate sodium salt.
The metal chemical mechanical polishing slurry according to claim 1, wherein the phosphate surfactant is contained in an amount of 0.0005 to 1% by mass.
The metal chemical mechanical polishing slurry according to claim 5, wherein the phosphate surfactant is contained in an amount of from 0.001 to 0.5% by mass.
The metal chemical mechanical polishing slurry according to claim 1, wherein said abrasive particles The particles are one or more of silica, alumina, doped aluminum or aluminum-coated silica, ceria, titania, and polymer abrasive particles.
The metal chemical mechanical polishing slurry according to claim 1, wherein the abrasive particles have a particle diameter of from 20 to 200 nm.
The metal chemical mechanical polishing slurry according to claim 1, wherein the content of the abrasive particles is 0.1-20% by mass.
The metal chemical mechanical polishing slurry according to claim 1, wherein the complexing agent is an amino acid and a salt thereof, an aminocarboxylate complex and a salt thereof, an organic carboxylic acid and a salt thereof, an organic phosphoric acid and a salt thereof And one or more of the organic amines.
The metal chemical polishing slurry according to claim 10, wherein the amino acid salt, the aminocarboxylate complex salt, the organic carboxylate, and the organic phosphate are potassium salts, sodium salts or ammonium salts.
The metal chemical polishing slurry according to claim 10, wherein the amino acid is glycine, alanine, valine, leucine, valine, phenylalanine, tyrosine, or tryptophan. One or more of lysine, arginine, histidine, serine, aspartic acid, threonine, glutamic acid, asparagine, glutamine; ammonia carboxy complex is ammonia One or more of triacetic acid, ethylenediaminetetraacetic acid, cyclohexanediaminetetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid, and triethylenetetraminehexaacetic acid; One or more of acetic acid, oxalic acid, citric acid, tartaric acid, malonic acid, succinic acid, malic acid, lactic acid, gallic acid, and sulfosalicylic acid; the organic phosphoric acid is 2-phosphonic acid butane- 1,2,4-tricarboxylic acid, aminotrimethylene phosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylene phosphonic acid, diethylenetriamine pentamethylphosphonic acid, 2-hydroxyphosphonic acid, One or more of ethylenediaminetetramethylenephosphonic acid and polyaminopolyether methylphosphonic acid; the organic amine is ethylenediamine, diethylenetriamine, pentamethyldi One or more alkylene triamine, polyethylene polyamine, triethylene tetramine, tetraethylene pentamine in.
The metal chemical mechanical polishing slurry according to claim 1, wherein the complexing agent is contained in an amount of from 0.05 to 10% by mass.
The metal chemical mechanical polishing slurry according to claim 13, wherein said complexing agent The content is 0.1-5% by mass.
The metal chemical mechanical polishing slurry according to claim 1, wherein said oxidizing agent is hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, persulfate, percarbonate, or periodic acid. One or more of perchloric acid, perboric acid, potassium permanganate and ferric nitrate.
The metal chemical mechanical polishing slurry according to claim 1, wherein the oxidizing agent is contained in an amount of from 0.05 to 10% by mass.
The metal chemical mechanical polishing slurry according to claim 1, wherein the corrosion inhibitor is one or more of a azole, an imidazole, a thiazole, a pyridine, and a pyrimidine compound.
The metal chemical mechanical polishing slurry according to claim 17, wherein the azole compound is benzotriazole, 5-methylbenzotriazole, 5-carboxybenzotriazole, 1-hydroxy-benzotriazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3, 5-diamino-1,2,4-triazole, 5-carboxy-3-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole , 5-acetic acid-1H-tetrazole, 5-methyltetrazolium, 5-phenyltetrazolium, 5-amino-1H-tetrazole and 1-phenyl-5-mercapto-tetrazolium One or several. The imidazole compound is one or more of benzimidazole and 2-mercaptobenzimidazole; the thiazole compound is 2-mercapto-benzothiazole, 2-mercaptothiadiazole and 5-amino-2 One or more of fluorenyl-1,3,4-thiadiazole; the pyridine is one or more of 2,3-diaminopyridine, 2-aminopyridine and 2-picolinic acid; The pyrimidine is a 2-aminopyrimidine.
The metal chemical mechanical polishing slurry according to claim 1, wherein the corrosion inhibitor is contained in an amount of 0.001 to 2% by mass.
The metal chemical mechanical polishing slurry according to claim 19, wherein the corrosion inhibitor is contained in an amount of 0.005 to 1% by mass.
The metal chemical mechanical polishing slurry according to claim 1, wherein the abrasive particles have a specific surface area of from 5 to 1000 m 2 /g.
A chemical mechanical polishing application of a metal chemical mechanical polishing slurry according to any one of claims 1 to 21 on a copper-containing substrate.