CN111378972A - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
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- CN111378972A CN111378972A CN201811639145.0A CN201811639145A CN111378972A CN 111378972 A CN111378972 A CN 111378972A CN 201811639145 A CN201811639145 A CN 201811639145A CN 111378972 A CN111378972 A CN 111378972A
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- polishing solution
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- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
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- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
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- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
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- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 claims description 2
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- 239000004472 Lysine Substances 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
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- 229920000642 polymer Polymers 0.000 claims description 2
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- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical group [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
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- 239000004474 valine Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 20
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 20
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
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- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing solution, which comprises silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, at least one polyacrylic acid anionic surfactant and a metal surface defect improver. The polishing solution has the advantages that: 1) the polishing solution has high polishing rate to copper and low polishing rate to tantalum, thereby having higher copper/tantalum polishing rate selection ratio; 2) the polishing solution can improve the disc-shaped depression of a polished copper wire and the erosion of a dielectric layer; 3) the polishing solution can improve the surface roughness of copper after polishing and reduce defects.
Description
Technical Field
The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing solution.
Background
With the development of semiconductor technology and the miniaturization of electronic parts, copper is widely used in electronic element circuits as a material having good conductivity. Because the resistance of copper is small, the transfer speed of signals between transistors in a circuit can be accelerated, and the parasitic capacitance capability and the electromigration sensitivity are smaller. These electrical advantages have led to copper with good prospects for the development of semiconductor technology.
However, during the fabrication of copper integrated circuits, it has been found that copper migrates or diffuses into the transistor areas of the integrated circuits, thereby adversely affecting the performance of the transistors of the semiconductor, and therefore copper interconnects can only be fabricated in a damascene process, i.e.: and forming a groove in the first layer, filling the groove with a copper barrier layer and copper, and forming a metal wire to cover the dielectric layer. The excess copper/copper barrier layer on the dielectric layer is then removed by chemical mechanical polishing, leaving a single interconnect line in the trench. The copper chemical mechanical polishing process is generally divided into 3 steps: step 1, removing a large amount of copper on the surface of the substrate by using a high downward pressure at a high and efficient removal rate and leaving copper with a certain thickness, step 2, removing the residual metal copper by using a low removal rate and stopping on the barrier layer, and step 3, removing the barrier layer, a part of the dielectric layer and the metal copper by using a barrier layer polishing solution to realize planarization.
In the copper polishing process, on one hand, redundant copper on the barrier layer is removed as soon as possible, and on the other hand, the dishing of the polished copper wire is reduced as much as possible. The metal layer is partially recessed above the copper lines prior to copper polishing. During polishing, copper on the dielectric material is easy to remove under high bulk pressure, and the polishing pressure on the copper at the concave part is lower than the bulk pressure, so that the copper removal rate is low. As the polishing progresses, the height difference of the copper is gradually reduced to achieve planarization. However, if the chemical action of the copper polishing solution is too strong and the static etch rate is too high during polishing, the passivation film of copper is easily removed even at a low pressure (e.g., at the dishing of the copper line), resulting in a decrease in planarization efficiency and an increase in dishing after polishing.
With the development of integrated circuits, on the one hand, in the conventional IC industry, in order to improve the integration level, reduce the power consumption, shorten the delay time, and make the line width narrower and narrower, the dielectric layer is made of a low dielectric (low-k) material with lower mechanical strength, the number of layers of the wiring is also increased, and in order to ensure the performance and stability of the integrated circuit, the requirement for copper chemical mechanical polishing is also increased. It is required to reduce polishing pressure, improve planarization of the copper wire surface, and control surface defects while ensuring the copper removal rate. On the other hand, due to physical limitations, line widths cannot be infinitely reduced, and the semiconductor industry is not simply relying on integrating more devices on a single chip to improve performance, but is turning to multi-chip packaging.
Through Silicon Via (TSV) technology has gained wide acceptance in the industry as a new technology for achieving interconnection between chips by making vertical conduction between chips and between wafers. The TSV can enable the stacking density of the chips in the three-dimensional direction to be the largest, the overall size to be the smallest, and the chip speed and the low power consumption performance to be greatly improved. The conventional IC process is combined to form a copper via penetrating through a silicon substrate, that is, copper is filled in a TSV opening to achieve conduction, and the excess copper after filling needs to be removed by chemical mechanical polishing to achieve planarization. Unlike the conventional IC industry, the excess copper on the filled back surface is typically several to tens of microns thick due to the deep through-silicon vias. In order to quickly remove this excess copper. It is generally desirable to have a high copper polishing rate while having a polished surface with good flatness. The existing polishing solution can generate disc-shaped depression of a copper wire, dielectric layer erosion, copper residue, corrosion and other defects after polishing.
Disclosure of Invention
In order to solve the problems, the invention provides a chemical mechanical polishing solution, which has higher copper polishing rate and lower polishing rate of a tantalum barrier layer by using a polyacrylic acid anionic surfactant, so that the polishing selection ratio of the polishing solution to the copper and tantalum barrier layers is improved, simultaneously the dishing and dielectric layer erosion of a polished copper wire are improved, and simultaneously, the surface roughness of the polished copper wire is improved by adding polyalcohol or hydrophilic polymer, and the defects are reduced.
Specifically, the invention provides a chemical mechanical polishing solution, which comprises silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, a polyacrylic anionic surfactant and a metal surface defect improving agent, wherein the polyacrylic anionic surfactant comprises one or more of polyacrylic acid homopolymer and/or copolymer and salt of polyacrylic acid homopolymer and/or copolymer.
Preferably, the polyacrylic homopolymer is polyacrylic acid and/or polymaleic acid; the polyacrylic acid copolymer is polyacrylic acid-polyacrylate copolymer and/or polyacrylic acid-polymaleic acid copolymer; the salt of the polyacrylic acid homopolymer and/or copolymer is potassium salt, ammonium salt and/or sodium salt.
Preferably, the molecular weight of the polyacrylic anionic surfactant is 1,000-10,000.
Preferably, the molecular weight of the polyacrylic anionic surfactant is 2,000-5,000.
Preferably, the concentration of the polyacrylic anionic surfactant is 0.0005 to 0.5 wt%.
Preferably, the concentration of the polyacrylic anionic surfactant is 0.001 to 0.1 wt%.
Preferably, the silica abrasive particles have an average particle size of 60 to 140 nm.
Preferably, the silica abrasive particles have an average particle size of 80 to 120 nm.
Preferably, the silica abrasive particles have a particle size distribution index of 0.1 to 0.6.
Preferably, the content of the silica abrasive particles is 0.05-2% by mass.
Preferably, the content of the silica abrasive particles is 0.1-1% by mass.
Preferably, the complexing agent comprises one or more of glycine, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediaminetetraacetic acid, cyclohexanediaminetetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid, and triethylenetetraminehexaacetic acid.
Preferably, the content of the complexing agent is 0.1-5% by mass.
Preferably, the content of the complexing agent is 0.5-3% by mass.
Preferably, the mass percent of the polyacrylic acid type anionic surfactant is 0.001-0.5%
Preferably, the mass percent of the polyacrylic acid type anionic surfactant is 0.005-0.1%
Preferably, the corrosion inhibitor comprises one or more of 1, 2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxyl-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazole and 5-amino-1H-tetrazole.
Preferably, the content of the corrosion inhibitor is 0.001-2% by mass.
Preferably, the content of the corrosion inhibitor is 0.005-1% by mass.
Preferably, the oxidizing agent is hydrogen peroxide.
Preferably, the content of the oxidant is 0.05-5% by mass.
Preferably, the content of the oxidant is 0.1-3% by mass.
Preferably, the metal surface defect improver comprises one or more of a polyol and a hydrophilic polymer.
Preferably, the polyol comprises one or more of ethylene glycol, 1, 4-butanediol, diethylene glycol, glycerol, and the like.
Preferably, the hydrophilic polymer comprises one or more of polyvinyl alcohol, polyvinylpyrrolidone, polyacrylamide, polyoxyethylene polyoxypropylene block polymer.
Preferably, the molecular weight of the metal surface defect improver is 1000 to 20000.
Preferably, the molecular weight of the metal surface defect improver is 1000-10000.
Preferably, the content of the metal surface defect improver is 0.01-3% by mass.
Preferably, the content of the metal surface defect improver is 0.1-2% by mass.
Preferably, the pH value of the chemical mechanical polishing solution is 5-8.
In another aspect of the present invention, there is provided a use of the above chemical mechanical polishing solution in polishing of copper metal.
The polishing solution of the invention can also comprise common additives in the chemical mechanical polishing solution, such as a pH regulator, a viscosity regulator, an antifoaming agent and the like.
Compared with the prior art, the invention has the advantages that: 1) the polishing solution has high polishing rate to copper and low polishing rate to tantalum, thereby having higher copper/tantalum polishing rate selection ratio; 2) the polishing solution can improve the disc-shaped depression of a polished copper wire and the erosion of a dielectric layer; 3) the polishing solution can improve the surface roughness of copper after polishing and reduce defects.
Detailed Description
The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following examples.
Table 1 shows examples 1-28 of the chemical mechanical polishing solutions of the present invention, in which the components other than the oxidizing agent were mixed uniformly in the formulations shown in the table, and water was added to make up the mass percent to 100%. With KOH or HNO3Adjusting to the required pH value. Adding oxidant before use, and mixing well. The polishing solution can also be prepared into a concentrated sample firstly, and is diluted by deionized water and added with an oxidant for use when in use.
TABLE 1 polishing solutions of inventive examples 1-28
Table 2 shows examples 29 to 41 and comparative examples 1 to 8 of the chemical mechanical polishing liquid of the present invention, in which the components other than the oxidizing agent were mixed uniformly in the formulation shown in the table, and water was added to make up the mass% to 100%. With KOH or HNO3Adjusting to the required pH value. Adding oxidant before use, and mixing well.
TABLE 2 polishing compositions for comparative polishing solutions 1-8 and examples 29-41
Using the polishing liquids of comparative examples 1 to 8 and inventive examples 29 to 41, the polishing was carried out on the bare copper (Cu) and tantalum (Ta) under the following conditions. The specific polishing conditions are as follows: cu polishing pressures of 1.5psi and 2.0psi, tantalum polishing pressure of 1.5 psi; the rotation speed of the polishing disk and the polishing head is 73/67rpm, the polishing pad IC1010 and the flow rate of the polishing solution is 350mL/min, the polishing machine is 12' Reflexion LK, and the polishing time is 1 min. The polishing rates for copper/tantalum were measured for each example and the polishing rate selectivity was calculated for both, and the results are shown in Table 3.
The polishing liquids of comparative examples 1 to 8 and inventive examples 29 to 41 were used to polish the patterned copper wafers under the following conditions. Polishing conditions: the rotation speed of the polishing disk and the polishing head is 73/67rpm, the polishing pad IC1010, the flow rate of the polishing solution is 350mL/min, and the polishing machine is 12' Reflexion LK. Polishing the patterned copper crystals on the polishing disk 1 with a down force of 2psiSheet to residual copper
The residual copper was then removed by applying a down force of 1.5psi to the polishing pad 2. The Dishing value (Dishing), dielectric layer Erosion (Erosion) and copper surface Roughness (Roughness) of a copper wire array area of 5um/1um (copper wire/dielectric material line width) on a copper wafer with a pattern were measured by an XE-300P atomic force microscope, the number of surface defects of a polished copper blank wafer was detected by a surface defect scanner SP2, and the results of the Dishing value and dielectric layer Erosion value of the obtained copper wire, and the copper surface Roughness and surface defect number are shown in table 3.
TABLE 3 polishing effects of comparative polishing solutions 1 to 8 and examples 29 to 41
As can be seen from Table 3, the polishing solutions of the examples of the present invention not only have a higher copper/tantalum polishing rate selectivity, but also have less dishing and dielectric erosion of copper wires, and less surface roughness and surface defects of copper after polishing, and have much improved surface morphology, after polishing with the polishing solutions of the present invention, compared with the comparative examples. The polishing solution of comparative example 1 contains only abrasive grains, a complexing agent and an oxidizing agent, and has high polishing rates for copper and tantalum, so that the polishing rate selectivity for copper/tantalum is low; the polishing solution of the comparative example 2 is added with the corrosion inhibitor on the basis of the polishing solution of the comparative example 1, so that the polishing rate of tantalum is reduced, and the polishing rate selection ratio of the polishing solution to copper/tantalum is improved to a certain extent. However, the polishing rate selectivity of the polishing solution of comparative example 2 to copper/tantalum is still not high enough to satisfy the polishing requirement when tantalum is used as a barrier layer, and the copper wire polished by the polishing solution of comparative example 2 has large dishing and dielectric erosion, large surface roughness and defects after polishing, and poor surface morphology of the copper wire. The polishing solutions of comparative examples 3 to 8, to which silica abrasives of different particle sizes and distributions were added, had a significant effect on the removal rate of copper by the polishing solution, and the removal rate of copper by the polishing solution was low when the particle size of the silica abrasives was small and the particle size distribution was wide or when the particle size of the silica abrasives was large and the particle size distribution was narrow. When the particle size and the particle size distribution strength of the silicon dioxide abrasive are within a certain distribution range, the removal rate of the polishing solution to copper is remarkably increased, and the polishing solution has an obvious inhibiting effect on the removal rate of Ta, so that the polishing solution has a higher Cu/Ta polishing selection ratio.
Compared with the embodiment 29 of the invention, the combination of azole corrosion inhibitor without benzene ring and polyacrylic acid anion surfactant is added in the comparative examples 5 and 6, but the pH value of the comparative example 5 is too low, the removal rate of copper and tantalum is higher, and the dishing of the copper wire and the erosion of the dielectric layer are larger. The pH value of comparative example 6 was too high, which resulted in a greatly reduced copper removal rate and an ineffective copper removal. From a comparison of the components of comparative example 7 and example 29, it was found that the combination of benzotriazole, an azole corrosion inhibitor having a benzene ring, and a polyacrylic acid anion surfactant, although reducing the tantalum removal rate, greatly suppressed the copper removal rate and failed to effectively remove copper. Further, the blank copper wafers after polishing of comparative example 8 and example 29 were subjected to defect scanning using a defect scanner SP2 after cleaning, and as a result, it was found that the number of defects on the surface of the copper wafers after polishing of comparative example 8 to which no metal surface defect improver was added was significantly higher than that of example 29. Therefore, the addition of the metal surface defect improver can further improve the surface roughness and surface defects of copper after polishing. As can be seen from comparative example 8 and examples 29 to 41, the addition of the polyol or the hydrophilic polymer does not affect the polishing rate of copper, and at the same time, significantly reduces the surface roughness and surface defects of copper after polishing, thereby improving the surface morphology of copper after polishing.
According to the polishing solution provided by the embodiment of the invention, by using the grinding particles with the particle size and the particle size distribution index within a certain range and a proper pH value, and adding the combination of the azole corrosion inhibitor, the polyacrylic acid anionic surfactant and the metal surface defect improver which do not contain benzene rings into the polishing solution, the high removal rate of copper is maintained, the removal rate of the tantalum barrier layer is reduced, and the effect of improving the polishing selection ratio of the polishing solution to the copper and tantalum barrier layers is realized; meanwhile, the polishing solution is used for polishing the wafer, can improve the Dishing (Dishing) and dielectric layer Erosion (Erosion) of the polished copper wire, can obviously improve the surface roughness of the polished copper wire, and can reduce surface defects.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (29)
1. A chemical mechanical polishing solution comprises silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, a polyacrylic anionic surfactant and a metal surface defect improver, wherein the polyacrylic anionic surfactant comprises one or more of polyacrylic homopolymer and/or copolymer and salt of polyacrylic homopolymer and/or copolymer.
2. The chemical mechanical polishing solution according to claim 1, wherein the polyacrylic homopolymer is polyacrylic acid and/or polymaleic acid; the polyacrylic acid copolymer is polyacrylic acid-polyacrylate copolymer and/or polyacrylic acid-polymaleic acid copolymer; the salt of the polyacrylic acid homopolymer and/or copolymer is potassium salt, ammonium salt and/or sodium salt.
3. The chemical mechanical polishing solution of claim 1 wherein the molecular weight of the polyacrylic anionic surfactant is 1,000-10,000.
4. The chemical mechanical polishing solution of claim 3, wherein the molecular weight of the polyacrylic anionic surfactant is 2,000-5,000.
5. The chemical mechanical polishing solution according to claim 1,
the mass percentage content of the polyacrylic acid anionic surfactant is 0.001% -0.5%.
6. The chemical mechanical polishing solution according to claim 5,
the mass percentage content of the polyacrylic acid anionic surfactant is 0.005-0.1%.
7. The chemical mechanical polishing solution according to claim 1,
the silica abrasive particles have an average particle size of 60 to 140 nm.
8. The chemical mechanical polishing solution according to claim 7,
the silica abrasive particles have an average particle size of 80 to 120 nm.
9. The chemical mechanical polishing solution according to claim 1,
the silica abrasive particles have a particle size distribution index of 0.1 to 0.6.
10. The chemical mechanical polishing solution according to claim 1,
the content of the silicon dioxide grinding particles is 0.05-2% by mass.
11. The chemical mechanical polishing solution according to claim 10,
the content of the silicon dioxide grinding particles is 0.1-1% by mass.
12. The chemical mechanical polishing solution according to claim 1,
the complexing agent comprises one or more of glycine, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediaminetetraacetic acid, cyclohexanediaminetetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid and triethylenetetraminehexaacetic acid.
13. The chemical mechanical polishing solution according to claim 1,
the mass percentage content of the complexing agent is 0.1-5%.
14. The chemical mechanical polishing solution according to claim 13,
the mass percentage content of the complexing agent is 0.5% -3%.
15. The chemical mechanical polishing solution according to claim 1,
the corrosion inhibitor comprises one or more of 1, 2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxyl-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazole and 5-amino-1H-tetrazole.
16. The chemical mechanical polishing solution according to claim 1,
the content of the corrosion inhibitor is 0.001-2% by mass.
17. The chemical mechanical polishing solution according to claim 16,
the content of the corrosion inhibitor is 0.005-1% by mass.
18. The chemical mechanical polishing solution according to claim 1,
the oxidant is hydrogen peroxide.
19. The chemical mechanical polishing solution according to claim 1,
the mass percentage content of the oxidant is 0.05% -5%.
20. The chemical mechanical polishing solution according to claim 19,
the mass percentage content of the oxidant is 0.1% -3%.
21. The chemical mechanical polishing solution according to claim 1,
the metal surface defect improving agent comprises one or more of polyalcohol and hydrophilic polymer.
22. The chemical mechanical polishing solution according to claim 21,
the polyhydric alcohol comprises one or more of ethylene glycol, 1, 4-butanediol, diethylene glycol, glycerol, etc.
23. The chemical mechanical polishing solution according to claim 21,
the hydrophilic polymer comprises one or more of polyvinyl alcohol, polyvinylpyrrolidone, polyacrylamide and polyoxyethylene polyoxypropylene block polymer.
24. The chemical mechanical polishing solution of claim 23,
the molecular weight of the metal surface defect improver is 1000-20000.
25. The chemical mechanical polishing solution of claim 24,
the molecular weight of the metal surface defect improver is 1000-10000.
26. The chemical mechanical polishing solution according to claim 1,
the mass percentage content of the metal surface defect improver is 0.01-3%.
27. The chemical mechanical polishing solution of claim 26,
the mass percentage content of the metal surface defect improver is 0.1-2%.
28. The chemical mechanical polishing solution according to claim 1,
the pH value of the chemical mechanical polishing solution is 5-8.
29. Use of the chemical mechanical polishing liquid of claims 1-28 in copper metal polishing.
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| TW202033691A (en) | 2020-09-16 |
| TWI838446B (en) | 2024-04-11 |
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