CN116355534A - Chemical mechanical polishing solution and application thereof - Google Patents
Chemical mechanical polishing solution and application thereof Download PDFInfo
- Publication number
- CN116355534A CN116355534A CN202111625525.0A CN202111625525A CN116355534A CN 116355534 A CN116355534 A CN 116355534A CN 202111625525 A CN202111625525 A CN 202111625525A CN 116355534 A CN116355534 A CN 116355534A
- Authority
- CN
- China
- Prior art keywords
- chemical mechanical
- mechanical polishing
- acid
- diethanolamide
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 91
- 239000000126 substance Substances 0.000 title claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000010949 copper Substances 0.000 claims abstract description 63
- 229910052802 copper Inorganic materials 0.000 claims abstract description 62
- 239000002245 particle Substances 0.000 claims abstract description 23
- 239000008139 complexing agent Substances 0.000 claims abstract description 11
- 239000007800 oxidant agent Substances 0.000 claims abstract description 10
- 239000004094 surface-active agent Substances 0.000 claims abstract description 10
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 239000003112 inhibitor Substances 0.000 claims abstract description 9
- 238000000227 grinding Methods 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 150000003839 salts Chemical class 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 17
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- CKNOIIXFUKKRIC-HZJYTTRNSA-N (9z,12z)-n,n-bis(2-hydroxyethyl)octadeca-9,12-dienamide Chemical compound CCCCC\C=C/C\C=C/CCCCCCCC(=O)N(CCO)CCO CKNOIIXFUKKRIC-HZJYTTRNSA-N 0.000 claims description 4
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 claims description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 4
- 229930195729 fatty acid Natural products 0.000 claims description 4
- 239000000194 fatty acid Substances 0.000 claims description 4
- 150000004665 fatty acids Chemical class 0.000 claims description 4
- 125000005066 dodecenyl group Chemical group C(=CCCCCCCCCCC)* 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims description 2
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 claims description 2
- LPMBTLLQQJBUOO-KTKRTIGZSA-N (z)-n,n-bis(2-hydroxyethyl)octadec-9-enamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)N(CCO)CCO LPMBTLLQQJBUOO-KTKRTIGZSA-N 0.000 claims description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
- ZZNDQCACFUJAKJ-UHFFFAOYSA-N 1-phenyltridecan-1-one Chemical compound CCCCCCCCCCCCC(=O)C1=CC=CC=C1 ZZNDQCACFUJAKJ-UHFFFAOYSA-N 0.000 claims description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 claims description 2
- HHSJOVPBCHTADG-UHFFFAOYSA-N 2,4-dihydroxy-n-(2-hydroxyethyl)benzamide Chemical compound OCCNC(=O)C1=CC=C(O)C=C1O HHSJOVPBCHTADG-UHFFFAOYSA-N 0.000 claims description 2
- HCYSJBICYOIBLS-UHFFFAOYSA-N 2-(dodecylamino)ethanol Chemical compound CCCCCCCCCCCCNCCO HCYSJBICYOIBLS-UHFFFAOYSA-N 0.000 claims description 2
- TZMVSJNOQJXJMO-UHFFFAOYSA-N 2-[1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound OC(=O)CC1(CC(O)=O)CCCCC1(CC(O)=O)CC(O)=O TZMVSJNOQJXJMO-UHFFFAOYSA-N 0.000 claims description 2
- GRWCNLYJHUHBOD-XVSDJDOKSA-N 2-hydroxyethylazanium;(5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound [NH3+]CCO.CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC([O-])=O GRWCNLYJHUHBOD-XVSDJDOKSA-N 0.000 claims description 2
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- HBICMRZCQLNXRU-UHFFFAOYSA-N 3,5-dihydroxy-n-(2-hydroxyethyl)benzamide Chemical compound OCCNC(=O)C1=CC(O)=CC(O)=C1 HBICMRZCQLNXRU-UHFFFAOYSA-N 0.000 claims description 2
- MVRGLMCHDCMPKD-UHFFFAOYSA-N 3-amino-1h-1,2,4-triazole-5-carboxylic acid Chemical compound NC1=NNC(C(O)=O)=N1 MVRGLMCHDCMPKD-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 2
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- 239000004475 Arginine Substances 0.000 claims description 2
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 claims description 2
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical class [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004471 Glycine Substances 0.000 claims description 2
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 claims description 2
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 2
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 2
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 claims description 2
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 claims description 2
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 claims description 2
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 claims description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 2
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 claims description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004472 Lysine Substances 0.000 claims description 2
- AOMUHOFOVNGZAN-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)dodecanamide Chemical compound CCCCCCCCCCCC(=O)N(CCO)CCO AOMUHOFOVNGZAN-UHFFFAOYSA-N 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims description 2
- AYFVYJQAPQTCCC-UHFFFAOYSA-N Threonine Natural products CC(O)C(N)C(O)=O AYFVYJQAPQTCCC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004473 Threonine Substances 0.000 claims description 2
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 2
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 claims description 2
- 235000004279 alanine Nutrition 0.000 claims description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 2
- 235000009582 asparagine Nutrition 0.000 claims description 2
- 229960001230 asparagine Drugs 0.000 claims description 2
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- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 229940098691 coco monoethanolamide Drugs 0.000 claims description 2
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- 239000004220 glutamic acid Substances 0.000 claims description 2
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 claims description 2
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 claims description 2
- ZUVCYFMOHFTGDM-UHFFFAOYSA-N hexadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCOP(O)(O)=O ZUVCYFMOHFTGDM-UHFFFAOYSA-N 0.000 claims description 2
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- 229930182817 methionine Natural products 0.000 claims description 2
- XGZOMURMPLSSKQ-UHFFFAOYSA-N n,n-bis(2-hydroxyethyl)octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)N(CCO)CCO XGZOMURMPLSSKQ-UHFFFAOYSA-N 0.000 claims description 2
- SKDZEPBJPGSFHS-UHFFFAOYSA-N n,n-bis(2-hydroxyethyl)tetradecanamide Chemical compound CCCCCCCCCCCCCC(=O)N(CCO)CCO SKDZEPBJPGSFHS-UHFFFAOYSA-N 0.000 claims description 2
- ISTASGAHDLTQRU-UHFFFAOYSA-N n-(2-hydroxyethyl)undec-10-enamide Chemical compound OCCNC(=O)CCCCCCCCC=C ISTASGAHDLTQRU-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- BOWVQLFMWHZBEF-KTKRTIGZSA-N oleoyl ethanolamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)NCCO BOWVQLFMWHZBEF-KTKRTIGZSA-N 0.000 claims description 2
- 229960003330 pentetic acid Drugs 0.000 claims description 2
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 claims description 2
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- 235000002374 tyrosine Nutrition 0.000 claims description 2
- 239000004474 valine Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 16
- 230000003628 erosive effect Effects 0.000 abstract description 9
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012468 concentrated sample Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GZZPOFFXKUVNSW-UHFFFAOYSA-N Dodecenoic acid Natural products OC(=O)CCCCCCCCCC=C GZZPOFFXKUVNSW-UHFFFAOYSA-N 0.000 description 1
- 241000724291 Tobacco streak virus Species 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing solution, comprising: abrasive particles, complexing agent, alkanolamide surfactant, azole corrosion inhibitor and oxidizing agent; the average particle size of the grinding particles is 40-140nm; the complexing agent is an aminocarboxylic compound and salts thereof. The invention has the advantages that: 1) The polishing solution has high copper removal rate and low tantalum removal rate, so that the polishing solution has a higher copper/tantalum removal rate selection ratio; 2) The polishing solution can improve dishing and dielectric erosion of the polished copper wire.
Description
Technical Field
The invention relates to the field of chemical polishing, in particular to a chemical mechanical polishing solution and application thereof.
Background
With the development of semiconductor technology, electronic components are miniaturized, and millions of transistors are included in an integrated circuit. In the operation process, the conventional aluminum or aluminum alloy interconnection lines are integrated with a huge number of transistors capable of being rapidly switched, so that the signal transmission speed is reduced, and a great amount of energy is consumed in the current transmission process, so that the development of semiconductor technology is hindered to a certain extent. For further development, the use of materials with higher electrical properties instead of aluminum is being sought. Copper is known to have a low resistance and good conductivity, which speeds up the transfer of signals between transistors in the circuit, and also provides less parasitic capacitance capability, and less sensitivity of the circuit to electromigration. These electrical advantages have led to copper having a good development prospect in the development of semiconductor technology.
However, during the fabrication of copper integrated circuits, it has been found that copper migrates or diffuses into the transistor regions of the integrated circuits, thereby adversely affecting the performance of the semiconductor transistors, and that copper interconnects can only be fabricated in a damascene process, namely: a trench is formed in the first layer, a copper barrier layer and copper are filled in the trench, and a metal wire is formed and covered on the dielectric layer. The excess copper/copper barrier layer on the dielectric layer is then removed by chemical mechanical polishing, leaving individual interconnect lines in the trenches. The chemical mechanical polishing process of copper is generally divided into 3 steps, namely, firstly removing a large amount of copper on the surface of a substrate with high downward pressure at a high and efficient removal rate and leaving a certain thickness of copper, secondly removing the residual metallic copper with low removal rate and stopping on a barrier layer, and thirdly, removing the barrier layer, part of dielectric layer and metallic copper with barrier layer polishing solution to realize planarization.
Copper polishing is to remove excessive copper on the barrier layer as soon as possible on the one hand, and to minimize dishing of the polished copper wire on the other hand. The metal layer has a partial recess over the copper lines prior to copper polishing. Copper on the dielectric material is easily removed under bulk pressure (higher) during polishing, while copper in the recess is polished at a lower pressure than the bulk pressure and at a lower copper removal rate. As polishing proceeds, the copper level difference gradually decreases to achieve planarization. However, if the chemical action of the copper polishing liquid is too strong and the static etching rate is too high during polishing, the passivation film of copper is easily removed even under a relatively low pressure (e.g., copper line dishing), resulting in a decrease in planarization efficiency and an increase in dishing after polishing.
With the development of integrated circuits, on the one hand, in the traditional IC industry, in order to improve the integration level, reduce the energy consumption, shorten the delay time, make the line width narrower and narrower, use the low dielectric (low-k) material with lower mechanical strength for the dielectric layer, the number of layers of the wiring is also increasing, and in order to ensure the performance and stability of the integrated circuit, the requirement on copper chemical mechanical polishing is also increasing. It is required to reduce polishing pressure, improve planarization of copper wire surface and control surface defects while ensuring copper removal rate. On the other hand, the line width cannot be scaled down indefinitely due to physical limitations, and the semiconductor industry is no longer solely dependent on integrating more devices on a single chip to improve performance, but is moving toward multi-chip packaging. Through Silicon Via (TSV) technology is widely accepted in the industry as a latest technology for realizing interconnection between chips by making vertical conduction between chips and between wafers. TSVs enable the density of stacked chips in three dimensions to be maximized, the overall dimensions to be minimized, and chip speed and low power consumption performance to be greatly improved. The conventional TSV process is combined with the conventional IC process to form copper vias penetrating through the silicon substrate, i.e., copper is filled in the TSV opening to realize conduction, and the superfluous copper after filling also needs to be planarized by chemical mechanical polishing removal. Unlike the conventional IC industry, the excess copper filled back surface is typically several to tens of microns thick due to the deep through silicon vias.
Therefore, a polishing solution capable of efficiently removing copper is needed, and meanwhile, the surface flatness of the polished wafer can be guaranteed to be good, so that copper has a wider application prospect in the field of semiconductors.
Disclosure of Invention
In order to overcome the technical defects, the invention aims to provide a chemical mechanical polishing solution, which can realize higher metal copper film removal rate in the CMP process and can improve dishing (dishing) and dielectric Erosion (Erosion) of a polished copper wire.
Specifically, the invention provides a chemical mechanical polishing solution, which comprises the following components: abrasive particles, complexing agent, alkanolamide surfactant, azole corrosion inhibitor and oxidizing agent; the average particle size of the grinding particles is 40-140nm; the complexing agent is an aminocarboxylic compound and salts thereof.
Preferably, the grinding particles are silicon dioxide, and the mass percentage content is 0.05% -1.0%; the abrasive particles have a particle size distribution index of 0.1 to 0.6.
Preferably, the complexing agent is one or more selected from glycine, alanine, aspartic acid, asparagine, serine, threonine, tyrosine, tryptophan, proline, cysteine, methionine, arginine, histidine, valine, leucine, phenylalanine, lysine, glutamic acid, glutamine, nitrilotriacetic acid, ethylenediamine tetraacetic acid, cyclohexane tetraacetic acid, ethylenediamine disuccinic acid, diethylenetriamine pentaacetic acid and triethylenetetramine hexaacetic acid.
Preferably, the mass percentage content of the complexing agent is 0.1% -3.0%.
Preferably, the alkanolamide surfactant is selected from one or more of diethanolamide, coco monoethanolamide, coco diethanolamide, lauric diethanolamide, coco fatty acid monoethanolamide, coco fatty acid diethanolamide, dodecenyl succinic diethanolamide, dodecenoic acid monoethanolamide, oleic monoethanolamide, linoleic diethanolamide, cetyl phosphate diethanolamide, undecylenic acid monoethanolamide sulfosuccinic disodium salt, stearic diethanolamide, myristic diethanolamide, N- (2-hydroxyethyl) -3, 5-dihydroxybenzamide, N- (2-hydroxyethyl) dodecylamide, 2, 4-dihydroxy-N- (2-hydroxyethyl) benzamide, (Z, Z) -N, N-bis (2-hydroxyethyl) -9, 12-octadecadienamide, arachidonic acid ethanolamine, (Z) -N, N-bis (2-hydroxyethyl) -9-octadecenoic acid amide.
Preferably, the mass percentage of the alkanolamide surfactant is 0.0001-0.1%.
Preferably, the azole corrosion inhibitor is selected from one or two of 1,2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxy-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-acetic acid-1H-tetrazole, mercaptobenzothiazole, methylbenzotriazole, 5-phenyl-1-H-tetrazole, 5-methyltetrazole and 5-amino-1H-tetrazole.
Preferably, the weight percentage of the azole corrosion inhibitor is 0.001-0.5%.
Preferably, the oxidant is hydrogen peroxide, and the mass percentage content is 0.05% -3.0%.
Preferably, the pH value of the chemical mechanical polishing solution is 5.0-8.0.
In another aspect of the present invention, there is provided a use of the chemical mechanical polishing liquid as described in any one of the above in polishing metallic copper.
The chemical mechanical polishing solution of the present invention may be prepared by concentrating, diluting with deionized water before use, and adding an oxidizing agent to the concentration range of the present invention.
Compared with the prior art, the invention has the advantages that: 1) The polishing solution has high copper removal rate and low tantalum removal rate, so that the polishing solution has a higher copper/tantalum removal rate selection ratio; 2) The polishing solution can improve dishing and dielectric erosion of the polished copper wire.
Detailed Description
The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following examples.
It should be noted that the embodiments of the present invention are preferred and not limited in any way, and any person skilled in the art may make use of the above-disclosed technical content to change or modify the same into equivalent effective embodiments without departing from the technical scope of the present invention, and any modification or equivalent change and modification of the above-described embodiments according to the technical substance of the present invention still falls within the scope of the technical scope of the present invention.
Table 1 shows examples 1-34 of the chemical mechanical polishing solutions of the present invention, and the components other than the oxidizing agent were uniformly mixed according to the formulation given in the table, with water being used to make up to 100% by mass. By KOH or HNO 3 Adjusted to the desired pH. Adding oxidant before use, and mixing. The polishing solution of the invention can also be prepared into a concentrated sample, and the concentrated sample is diluted to the concentration in the embodiment by deionized water when in use, and an oxidant is added for use.
TABLE 1 Components of chemical mechanical polishing solutions of comparative examples 1-4 and examples 1-34 and their contents
The chemical polishing solutions of comparative examples 1 to 4 and inventive examples 27 to 34 were used to polish bare copper (Cu) and tantalum (Ta) under the following conditions.
Specific polishing conditions: cu polishing pressures were 1.5psi and 2.0psi, tantalum polishing pressures were 1.5psi; the rotation speed of the polishing disk and the polishing head is 73/67rpm, the polishing pad IC1010 and the flow rate of the polishing liquid are 300mL/min, the polishing table is 12' reflexion LK, and the polishing time is 1min. The polishing rates for copper/tantalum for each example were measured separately and the polishing rate selection ratios for both were calculated and the results are set forth in table 2.
The patterned copper wafers were polished using the chemical polishing solutions of comparative examples 1 to 4 and inventive examples 27 to 34 under the following conditions.
Specific polishing conditions: the rotation speed of the polishing disk and the polishing head is 73/67rpm, the polishing pad IC1010 and the flow rate of the polishing liquid is 300mL/min, and the polishing table is 12' reflexion LK. Polishing the patterned copper wafer to about residual copper on polishing pad 1 with a downforce of 2.0psi
The residual copper was then removed on polishing pad 2 with a down force of 1.5 psi. Dishing values (Dishing), dielectric Erosion (eroion), and copper surface Roughness (rouchness) of copper line array regions of 5um/1um (copper line/dielectric line width) on patterned copper wafers were measured with an XE-300P atomic force microscope, and the number of surface defects of the copper blank wafer after polishing was measured with a surface defect scanner SP2, and the Dishing values and dielectric Erosion values of the resulting copper lines, and the copper surface Roughness and number of surface defects were as shown in table 2.
Table 2 polishing test results for comparative examples 1 to 4 and examples 27 to 34
As can be seen from table 2, the polishing liquid of the present invention not only has a higher copper/tantalum polishing rate selection ratio compared with the comparative example, but also significantly reduces dishing of copper wire and erosion of dielectric layer after polishing using the polishing liquid of the present invention, and too large and too small particle size distribution coefficients of abrasive particles result in too low polishing rate of the polishing liquid and increased dishing.
The polishing solution of the comparative example 1 only contains silicon dioxide abrasive particles, complexing agent and oxidant, and has higher copper and tantalum removal rates, so the polishing rate selection ratio of copper/tantalum is low; the polishing solution of comparative example 2 was added with the azole corrosion inhibitor based on comparative example 1, thereby reducing the tantalum removal rate and improving the polishing rate selection ratio of the polishing solution to copper/tantalum to some extent. However, the polishing rate selection ratio of the polishing liquid of comparative example 2 to copper/tantalum was still not high enough to meet the polishing requirements when tantalum was used as a barrier layer.
In comparative example 3, abrasive grains having a larger particle size and a smaller particle size distribution coefficient were selected, and although alkanolamide surfactants were selected, the copper polishing rate was still low and both dishing and dielectric erosion of the copper wire were high. The excessive addition of the alkanolamide surfactant in comparative example 4 resulted in too low a copper polishing rate.
The polishing solution of the embodiment 27-34 of the invention controls the pH value to 5-8 by selecting the grinding particles with the average particle diameter of 40-140nm and the particle size distribution coefficient of 0.1-0.6, and the nitrogen-containing heterocyclic corrosion inhibitor and the alkanolamide surfactant are matched for use, so that the polishing solution has higher copper polishing rate, lower tantalum polishing rate and higher copper/tantalum polishing rate selection ratio; meanwhile, dishing and dielectric erosion of the polished copper wire are remarkably reduced.
It should be noted that the embodiments of the present invention are preferred and not limited in any way, and any person skilled in the art may make use of the above-disclosed technical content to change or modify the same into equivalent effective embodiments without departing from the technical scope of the present invention, and any modification or equivalent change and modification of the above-described embodiments according to the technical substance of the present invention still falls within the scope of the technical scope of the present invention.
Claims (11)
1. A chemical mechanical polishing solution is characterized in that,
comprising the following steps: abrasive particles, complexing agent, alkanolamide surfactant, azole corrosion inhibitor and oxidizing agent;
the average particle size of the grinding particles is 40-140nm;
the complexing agent is an aminocarboxylic compound and salts thereof.
2. The chemical mechanical polishing liquid according to claim 1, wherein,
the grinding particles are silicon dioxide, and the mass percentage content is 0.05% -1.0%;
the abrasive particles have a particle size distribution index of 0.1 to 0.6.
3. The chemical mechanical polishing liquid according to claim 1, wherein,
the complexing agent is one or more selected from glycine, alanine, aspartic acid, asparagine, serine, threonine, tyrosine, tryptophan, proline, cysteine, methionine, arginine, histidine, valine, leucine, phenylalanine, lysine, glutamic acid, glutamine, nitrilotriacetic acid, ethylenediamine tetraacetic acid, cyclohexane tetraacetic acid, ethylenediamine disuccinic acid, diethylenetriamine pentaacetic acid and triethylenetetramine hexaacetic acid.
4. The chemical mechanical polishing liquid according to claim 1, wherein,
the mass percentage content of the complexing agent is 0.1% -3.0%.
5. The chemical mechanical polishing liquid according to claim 1, wherein,
the alkanolamide surfactant is selected from one or more of diethanolamide, coco monoethanolamide, coco diethanolamide, lauric diethanolamide, coco fatty acid monoethanolamide, coco fatty acid diethanolamide, dodecenyl succinic diethanolamide, dodecenyl monoethanolamide, oleic monoethanolamide, linoleic diethanolamide, cetyl phosphate diethanolamide, undecylenic acid monoethanolamide sulfosuccinic disodium salt, stearic diethanolamide, myristic diethanolamide, N- (2-hydroxyethyl) -3, 5-dihydroxybenzamide, N- (2-hydroxyethyl) dodecylamide, 2, 4-dihydroxy-N- (2-hydroxyethyl) benzamide, (Z, Z) -N, N-bis (2-hydroxyethyl) -9, 12-octadecadienamide, arachidonic acid ethanolamine, (Z) -N, N-bis (2-hydroxyethyl) -9-octadecenoic acid amide.
6. The chemical mechanical polishing liquid according to claim 1, wherein,
the mass percentage content of the alkanolamide surfactant is 0.0001-0.1%.
7. The chemical mechanical polishing liquid according to claim 1, wherein,
the azole corrosion inhibitor is selected from one or two of 1,2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxyl-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-acetic acid-1H-tetrazole, mercaptobenzothiazole, methylbenzotriazole, 5-phenyl-1-H-tetrazole, 5-methyltetrazole and 5-amino-1H-tetrazole.
8. The chemical mechanical polishing liquid according to claim 1, wherein,
the weight percentage content of the azole corrosion inhibitor is 0.001-0.5%.
9. The chemical mechanical polishing liquid according to claim 1, wherein,
the oxidant is hydrogen peroxide, and the mass percentage content is 0.05% -3.0%.
10. The chemical mechanical polishing liquid according to claim 1, wherein,
the pH value of the chemical mechanical polishing solution is 5.0-8.0.
11. Use of a chemical mechanical polishing solution according to any one of claims 1 to 10 in the polishing of metallic copper.
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