CN109972145B - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
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- CN109972145B CN109972145B CN201711439526.XA CN201711439526A CN109972145B CN 109972145 B CN109972145 B CN 109972145B CN 201711439526 A CN201711439526 A CN 201711439526A CN 109972145 B CN109972145 B CN 109972145B
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- mechanical polishing
- sulfonate
- polishing solution
- copper
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- 238000005498 polishing Methods 0.000 title claims abstract description 88
- 239000000126 substance Substances 0.000 title claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000010949 copper Substances 0.000 claims abstract description 66
- 229910052802 copper Inorganic materials 0.000 claims abstract description 57
- 239000002245 particle Substances 0.000 claims abstract description 27
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- -1 hydrocarbon sulfonate Chemical class 0.000 claims abstract description 18
- 239000003112 inhibitor Substances 0.000 claims abstract description 14
- 239000007800 oxidant agent Substances 0.000 claims abstract description 13
- 239000008139 complexing agent Substances 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract 4
- 229930195733 hydrocarbon Natural products 0.000 claims abstract 4
- 239000007788 liquid Substances 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 8
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 5
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- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims description 2
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 claims description 2
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
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- TZMVSJNOQJXJMO-UHFFFAOYSA-N 2-[1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound OC(=O)CC1(CC(O)=O)CCCCC1(CC(O)=O)CC(O)=O TZMVSJNOQJXJMO-UHFFFAOYSA-N 0.000 claims description 2
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 2
- MVRGLMCHDCMPKD-UHFFFAOYSA-N 3-amino-1h-1,2,4-triazole-5-carboxylic acid Chemical compound NC1=NNC(C(O)=O)=N1 MVRGLMCHDCMPKD-UHFFFAOYSA-N 0.000 claims description 2
- BRIXOPDYGQCZFO-UHFFFAOYSA-M 4-ethylbenzenesulfonate Chemical compound CCC1=CC=C(S([O-])(=O)=O)C=C1 BRIXOPDYGQCZFO-UHFFFAOYSA-M 0.000 claims description 2
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 claims description 2
- 239000004475 Arginine Substances 0.000 claims description 2
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 claims description 2
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- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
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- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims description 2
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- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 claims description 2
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- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 claims description 2
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 claims description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 2
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- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004472 Lysine Substances 0.000 claims description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-M Methanesulfonate Chemical compound CS([O-])(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-M 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims description 2
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 2
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 2
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 claims description 2
- 235000004279 alanine Nutrition 0.000 claims description 2
- 150000008052 alkyl sulfonates Chemical class 0.000 claims description 2
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 claims description 2
- 235000009582 asparagine Nutrition 0.000 claims description 2
- 229960001230 asparagine Drugs 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- NLVXSWCKKBEXTG-UHFFFAOYSA-M ethenesulfonate Chemical compound [O-]S(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-M 0.000 claims description 2
- 235000013922 glutamic acid Nutrition 0.000 claims description 2
- 239000004220 glutamic acid Substances 0.000 claims description 2
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 claims description 2
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 claims description 2
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- 229960003330 pentetic acid Drugs 0.000 claims description 2
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 claims description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical group [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 claims description 2
- 239000004474 valine Substances 0.000 claims description 2
- 125000001376 1,2,4-triazolyl group Chemical group N1N=C(N=C1)* 0.000 claims 1
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 10
- 229910052715 tantalum Inorganic materials 0.000 abstract description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 15
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
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- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing solution, which comprises silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant and a hydrocarbon sulfonate anionic surfactant. The polishing solution can be applied to polishing of metal copper interconnection, and can remarkably improve copper removal rate and simultaneously reduce tantalum removal rate. In addition, dishing of the polished copper wire can be improved, and the polished copper wire has no defects of copper residue, corrosion and the like.
Description
Technical Field
The invention relates to the field of chemical mechanical polishing solutions, in particular to a metal chemical mechanical polishing solution.
Background
With the development of semiconductor technology, electronic components are miniaturized, and millions of transistors are included in an integrated circuit. The conventional aluminum or aluminum alloy interconnection line integrates a large number of transistors capable of being rapidly switched, so that the signal transmission speed is reduced, and a large amount of energy is consumed in the current transmission process, thereby preventing the development of semiconductor technology to a certain extent.
For this reason, materials having higher electrical properties have been sought to replace aluminum. Copper is known to have low resistance and good conductivity, and can increase the transfer rate of signals between transistors in a circuit, and also provide less parasitic capacitance capability, thereby reducing the sensitivity of the circuit to electromigration. Therefore, the electrical advantages described above make copper have a good development prospect in the development of semiconductor technology.
However, during the fabrication of copper integrated circuits, copper has been found to migrate or diffuse into the transistor areas of the integrated circuits, thereby adversely affecting transistor performance in the semiconductor, and thus copper interconnects can only be fabricated by damascene processes, i.e.: a trench is formed in the first layer, and a copper barrier layer and copper are filled in the trench to form a metal wire and cover the dielectric layer. Thereafter, the excess copper/copper barrier layer on the dielectric layer is removed by chemical mechanical polishing, eventually leaving a single interconnect line in the trench.
The chemical mechanical polishing process of copper is generally divided into 3 steps, namely, a high pressure is adopted in step 1 to remove a large amount of copper on the surface of a substrate at a high and efficient removal rate and leave a certain thickness of copper, the rest of metallic copper is removed at a low removal rate and stopped at a barrier layer in step 2, and the barrier layer, part of dielectric layer and metallic copper are removed by using a barrier layer polishing solution in step 3, so that planarization is realized.
However, prior to copper polishing, the metal layer has a partial recess over the copper lines. Copper on the dielectric material is easily removed under bulk pressure (higher) during polishing, while copper in the recess is polished at a lower pressure than the bulk pressure and at a lower copper removal rate. As polishing proceeds, the copper level difference gradually decreases, thereby achieving planarization. However, if the chemical action of the copper polishing liquid is too strong and the static etching rate is too high during polishing, the passivation film of copper is easily removed even under a relatively low pressure (e.g., copper line dishing), resulting in a decrease in planarization efficiency and an increase in dishing after polishing. Therefore, for chemical mechanical polishing of copper, it is necessary to remove the excess copper on the barrier layer as soon as possible on the one hand, and to minimize dishing of the polished copper line on the other hand.
With the development of integrated circuits, on the one hand, in the traditional IC industry, in order to improve the integration level, reduce the energy consumption, shorten the delay time, make the line width narrower and narrower, use the low dielectric (low-k) material with lower mechanical strength for the dielectric layer, the number of layers of the wiring is also increasing, and in order to ensure the performance and stability of the integrated circuit, the requirement on copper chemical mechanical polishing is also increasing. It is required to reduce polishing pressure, improve planarization of copper wire surface and control surface defects while ensuring copper removal rate. On the other hand, the line width cannot be scaled down indefinitely due to physical limitations, and the semiconductor industry is no longer solely dependent on integrating more devices on a single chip to improve performance, but is moving toward multi-chip packaging.
With the development of semiconductor manufacturing process, in order to make copper better applied in semiconductor technology, a metal chemical mechanical polishing solution is needed to provide copper removal rate and polishing selection ratio of copper and tantalum barrier layer, improve dishing of polished copper wire, and have no defects of copper residue and corrosion after polishing.
Disclosure of Invention
In order to solve the problems, the invention provides a chemical mechanical polishing solution applicable to copper interconnection, which improves the polishing selection ratio of copper and tantalum barrier layers, improves dishing of copper wires and erosion of dielectric layers after polishing, and has no defects of copper residues, corrosion and the like after polishing by adding silicon dioxide abrasive particles, corrosion inhibitors, complexing agents, oxidizing agents, polyacrylic anionic surfactants and/or hydrocarbyl sulfonates into the polishing solution.
The invention provides a chemical mechanical polishing solution, which comprises silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidant, a polyacrylic anionic surfactant and/or a hydrocarbyl sulfonate.
Preferably, the abrasive particles have an average particle size of 60 to 140nm, more preferably 80 to 120nm.
Preferably, the abrasive particles have a particle size distribution index (PdI) of 0.1 to 0.6.
Preferably, the concentration of the abrasive particles is from 0.05 to 2wt%, more preferably from 0.1 to 1wt%.
Preferably, the complexing agent is an aminocarboxylic compound and salts thereof.
Preferably, the complexing agent is selected from one or more of glycine, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediamine tetraacetic acid, cyclohexane tetraacetic acid, ethylenediamine disuccinic acid, diethylenetriamine pentaacetic acid and triethylenetetramine hexaacetic acid.
Preferably, the complexing agent content is 0.1-5wt%, more preferably, the complexing agent content is 0.5-3wt%.
Preferably, the hydrocarbyl sulfonate is a C <10 hydrocarbyl sulfonate; wherein the alkyl sulfonate is potassium salt or sodium salt.
Preferably, the hydrocarbyl sulfonate comprises one or more of methyl sulfonate, vinyl sulfonate, allyl sulfonate, p-methyl benzene sulfonate, p-ethyl benzene sulfonate, p-propyl benzene sulfonate.
Preferably, the concentration of the hydrocarbyl sulfonate surfactant is from 0.001 to 0.5wt%, more preferably, the concentration of the hydrocarbyl sulfonate surfactant is from 0.005 to 0.1wt%
Preferably, the corrosion inhibitor is a azole compound.
Preferably, the corrosion inhibitor is selected from one or more of benzotriazole, 1,2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxy-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazole, methylbenzotriazole and 5-amino-1H-tetrazole.
Preferably, the corrosion inhibitor concentration is from 0.001 to 2wt%, more preferably, the corrosion inhibitor concentration is from 0.005 to 1wt%.
Preferably, the oxidizing agent is hydrogen peroxide.
Preferably, the concentration of the oxidizing agent is 0.05 to 5wt%, more preferably 0.1 to 3wt%.
Preferably, the pH value of the chemical mechanical polishing solution is 5-9.
The invention further provides application of the chemical mechanical polishing solution in metal copper interconnection.
Other common additives such as pH regulator, viscosity regulator, defoaming agent and the like can be further included in the polishing solution to achieve the polishing effect.
The polishing liquid of the present invention may be concentrated and diluted with deionized water at the time of use and used by adding an oxidizing agent to the concentration range of the present invention.
Compared with the prior art, the invention has the technical advantages that:
1. the copper removal rate is improved, and meanwhile, the tantalum removal rate is reduced;
2. dishing and dielectric erosion of the polished copper wire can be improved;
drawings
FIG. 1 is a schematic view showing dishing and dielectric erosion of copper lines in a copper pattern chip polished with a polishing solution of comparative example 3;
FIG. 2 is a schematic view showing dishing and dielectric erosion of copper lines in a copper pattern chip polished with the polishing solution of example 37.
Detailed Description
The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following examples.
Table 1 shows the contents of the components in examples 1 to 36 of the chemical mechanical polishing liquid of the present invention. The preparation method of the polishing solution comprises the following steps: the other components except the oxidant are uniformly mixed according to the formula in the following table, and the water is used for supplementing the mass percentage to 100%. By KOH or HNO 3 Adjusted to the desired pH. Adding oxidant before use, and mixing.
Table 1 shows the formulations of polishing solutions of examples 1-36
Table 2 shows examples 37-50 and comparative examples 1-7 of the chemical mechanical polishing solutions of the present invention, and the components other than the oxidizing agent were uniformly mixed according to the formulations given in the table, with water being used to make up to 100% by mass. By KOH or HNO 3 Adjusted to the desired pH. Adding oxidant before use, and mixing.
Table 2 shows the formulations of comparative examples 1-7 and examples 37-50 for polishing solutions
As shown in Table 1 and Table 2, the chemical mechanical polishing solution provided by the invention is prepared by selecting SiO with different particle size and particle size distribution coefficient (PdI) 2 The abrasive particles were used as the abrasive component of the cmp slurry to prepare various cmp slurry examples 1-50. Further, copper was polished by using inventive examples 37 to 50 and comparative polishing solutions 1 to 7, respectively, and the obtained polishing effect data are shown in Table 3.
Specific polishing conditions: the pressure was 1.5psi,2.0psi; the rotation speed of the polishing disk and the polishing head is 73/67rpm, the polishing pad IC1010 and the flow rate of the polishing liquid are 350ml/min, the polishing table is 12' reflexionLK, and the polishing time is 1min.
TABLE 3 polishing effects of comparative examples 1-6 and examples 37-50
As shown in tables 2 and 3, the polishing solution examples 37-50 provided by the invention have higher Cu removal rate and lower Ta polishing rate after adding the hydrocarbyl sulfonate under the polishing pressure of 2.0psi or 1.5psi, so that the polishing selection ratio of Cu/Ta can be obviously improved, and can reach 2343 at most. Meanwhile, the dishing value and the dielectric layer erosion value of the wafer can be further controlled. In particular, in examples 43 and 44, the polishing liquid provided by the present invention can significantly reduce dishing and erosion of the dielectric layer.
As shown in tables 2 and 3, siO's having different particle sizes and particle size distribution coefficients were added in examples 37 to 41 2 After the grinding, the polishing solution has obvious difference on Cu removal rate, and when being combined with comparative examples 3 and 4, the polishing solution has the following characteristics that when SiO 2 The abrasive has smaller particle size and wider particle size distribution or when SiO 2 When the particle size of the abrasive is large and the particle size distribution is narrow, the Cu removal rate of the polishing liquid is low. While when SiO 2 When the grain size and the grain size distribution intensity (PdI) of the abrasive are in a certain distribution range, the Cu removal rate of the polishing solution is obviously increased, and meanwhile, the Ta removal rate is obviously inhibited, so that the polishing solution has a higher Cu/Ta polishing selection ratio. Furthermore, example 42 further improved dishing and erosion of copper lines while achieving a higher Cu/Ta polish selectivity compared to comparative examples 3, 4.
Referring further to fig. 1 and 2, surface topography of dense line array regions with a copper line width of 5 microns and a dielectric material width of 1 micron in copper pattern chips polished using comparative example 3 and example 37, respectively. As can be seen from the figure, using comparative example 3 as a polishing liquid, the polished copper wire had dishing of 125.7 nm and dielectric erosion of 43.9 nm; by using the polishing solution in example 37, dishing of the polished copper wire was reduced to 61.1 nm and erosion of the dielectric layer was reduced to 9.2 nm, and the polishing solution of the present invention was very remarkable in reducing effect on the polished surface morphology, particularly erosion of the dielectric layer.
Meanwhile, it was found that the combination of the azole corrosion inhibitor benzotriazole with benzene ring and the sulfonate anionic surfactant, which was found by comparing the components of example 39 with those of comparative example 7, greatly inhibited the copper removal rate and failed to effectively remove copper, although the tantalum removal rate was reduced. Compared with the invention of the example 39, the comparative examples 5 and 6 use the combination of the azole corrosion inhibitor without benzene ring and the sulfonate anionic surfactant, but the pH value of the comparative example 5 is too low, the copper and tantalum removal rate is also higher, and the dishing and the erosion of the dielectric layer are both larger. However, the pH of comparative example 6 was too high, resulting in a significant reduction in copper removal rate and failure to remove copper effectively.
The blank copper wafer polished with the comparative polishing liquid 5 and examples 38, 39 was subjected to defect scanning by the defect scanner SP2 after being cleaned, and as a result, it was found that the surface defect number of the comparative polishing liquid 5 prepared with the abrasive grains of higher PdI and the copper wafer polished with example 38 was higher than that of example 39. Therefore, the PdI of the abrasive particles is controlled within a certain range to meet the removal rate and defect requirements.
In summary, the present invention ensures high copper removal rates and reduces surface defects by using abrasive particles with PdI within a certain range. And by adding the combination of the azole corrosion inhibitor without benzene ring and the sulfonate anionic surfactant in the polishing solution, the high copper removal rate is maintained, the tantalum barrier removal rate is reduced, and the effect of improving the polishing selection ratio of the polishing solution to the copper and tantalum barrier is realized; the polishing method is used for polishing the wafer, can improve Dishing (Dishing) and dielectric Erosion (Erosion) of the polished copper wire, and has no defects of copper residues, corrosion and the like after polishing.
It should be noted that the embodiments of the present invention are preferred and not limited in any way, and any person skilled in the art may make use of the above-disclosed technical content to change or modify the same into equivalent effective embodiments without departing from the technical scope of the present invention, and any modification or equivalent change and modification of the above-described embodiments according to the technical substance of the present invention still falls within the scope of the technical scope of the present invention.
Claims (12)
1. A chemical mechanical polishing liquid for adjusting a Cu/Ta polishing selection ratio, characterized in that the chemical mechanical polishing liquid comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, and a hydrocarbon sulfonate type anionic surfactant, the abrasive particles have a particle size distribution index (PdI) of 0.25 to 0.6, the abrasive particles have an average particle size of 60 to 140nm, and the content is 0.05 to 2wt%;
the corrosion inhibitor is an azole compound which does not contain benzene rings, and the content is 0.001-2wt% of the compound; the hydrocarbyl sulfonate is a hydrocarbyl sulfonate with C < 10; wherein the alkyl sulfonate is potassium salt or sodium salt, and the content is 0.001-0.5wt%;
the complexing agent is an aminocarboxylic compound and salt thereof, and the content is 0.1-5wt%;
the oxidant is hydrogen peroxide, and the content is 0.05-5wt%.
2. The chemical mechanical polishing liquid according to claim 1, wherein the abrasive particles have an average particle diameter of 80 to 120nm.
3. The chemical mechanical polishing solution according to claim 1, wherein the concentration of the abrasive particles is 0.1 to 1wt%.
4. The chemical mechanical polishing solution according to claim 1, wherein the complexing agent is selected from one or more of glycine, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediamine tetraacetic acid, cyclohexane tetraacetic acid, ethylenediamine disuccinic acid, diethylenetriamine pentaacetic acid, and triethylenetetramine hexaacetic acid.
5. The chemical mechanical polishing liquid according to claim 1, wherein the complexing agent content is 0.5-3wt%.
6. The chemical mechanical polishing solution according to claim 1, wherein the concentration of the hydrocarbon sulfonate surfactant is 0.005 to 0.1wt%.
7. The chemical mechanical polishing solution according to claim 1, wherein the hydrocarbon sulfonate comprises one or more of methyl sulfonate, vinyl sulfonate, allyl sulfonate, p-methyl benzene sulfonate, p-ethyl benzene sulfonate, and p-propyl benzene sulfonate.
8. The chemical mechanical polishing liquid according to claim 1, wherein the corrosion inhibitor is selected from the group consisting of 1,2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxy-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2,
one or more of 4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazole and 5-amino-1H-tetrazole.
9. The chemical mechanical polishing solution according to claim 1, wherein the corrosion inhibitor has a concentration of 0.005 to 1wt%.
10. The chemical mechanical polishing solution according to claim 1, wherein the concentration of the oxidizing agent is 0.1 to 3wt%.
11. The chemical mechanical polishing solution according to claim 1, wherein the pH of the chemical mechanical polishing solution is 5 to 9.
12. Use of a chemical mechanical polishing solution according to any one of claims 1 to 11 for metal copper interconnects and for adjusting the Cu/Ta polishing selectivity.
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| CN115820127A (en) * | 2022-11-07 | 2023-03-21 | 上海交通大学 | Chemical mechanical polishing solution suitable for copper-cobalt interconnection structure and preparation method thereof |
| CN116144323A (en) * | 2022-12-15 | 2023-05-23 | 上海应用技术大学 | Composite microsphere with mesoporous core-shell structure for copper CMP, preparation method thereof, chemical mechanical polishing solution and application thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101117548A (en) * | 2006-08-02 | 2008-02-06 | 福吉米股份有限公司 | Polishing composition and polishing process |
| CN101130666A (en) * | 2006-08-25 | 2008-02-27 | 安集微电子（上海）有限公司 | Polishing solution containing mixed abrasive material of dielectric materials |
| CN101240146A (en) * | 2007-02-06 | 2008-08-13 | 富士胶片株式会社 | Metal-polishing composition and chemical mechanical polishing method by using the same |
| CN101541913A (en) * | 2006-12-22 | 2009-09-23 | 韩国泰科诺赛美材料株式会社 | Chemical mechanical polishing composition for copper comprising zeolite |
| CN102181232A (en) * | 2011-03-17 | 2011-09-14 | 清华大学 | Composition for low downforce chemically mechanical polishing of coppers in ULSI (Ultra Large Scale Integrated Circuit) multi-layered copper wiring |
| CN102464945A (en) * | 2010-11-12 | 2012-05-23 | 安集微电子（上海）有限公司 | Chemically mechanical polishing solution |
| CN102533126A (en) * | 2010-12-21 | 2012-07-04 | 盟智科技股份有限公司 | Abrasive composition and use thereof |
| CN103894918A (en) * | 2012-12-28 | 2014-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing method |
| CN105803461A (en) * | 2014-12-29 | 2016-07-27 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing solution and process for copper interconnection |
| CN107078054A (en) * | 2014-10-30 | 2017-08-18 | 应用材料公司 | Ceria slurry based on nano-particle |
| CN108250978A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid and its application |
| CN109971353A (en) * | 2017-12-27 | 2019-07-05 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
-
2017
- 2017-12-27 CN CN201711439526.XA patent/CN109972145B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101117548A (en) * | 2006-08-02 | 2008-02-06 | 福吉米股份有限公司 | Polishing composition and polishing process |
| CN101130666A (en) * | 2006-08-25 | 2008-02-27 | 安集微电子（上海）有限公司 | Polishing solution containing mixed abrasive material of dielectric materials |
| CN101541913A (en) * | 2006-12-22 | 2009-09-23 | 韩国泰科诺赛美材料株式会社 | Chemical mechanical polishing composition for copper comprising zeolite |
| CN101240146A (en) * | 2007-02-06 | 2008-08-13 | 富士胶片株式会社 | Metal-polishing composition and chemical mechanical polishing method by using the same |
| CN102464945A (en) * | 2010-11-12 | 2012-05-23 | 安集微电子（上海）有限公司 | Chemically mechanical polishing solution |
| CN102533126A (en) * | 2010-12-21 | 2012-07-04 | 盟智科技股份有限公司 | Abrasive composition and use thereof |
| CN102181232A (en) * | 2011-03-17 | 2011-09-14 | 清华大学 | Composition for low downforce chemically mechanical polishing of coppers in ULSI (Ultra Large Scale Integrated Circuit) multi-layered copper wiring |
| CN103894918A (en) * | 2012-12-28 | 2014-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing method |
| CN107078054A (en) * | 2014-10-30 | 2017-08-18 | 应用材料公司 | Ceria slurry based on nano-particle |
| CN105803461A (en) * | 2014-12-29 | 2016-07-27 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing solution and process for copper interconnection |
| CN108250978A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子科技（上海）股份有限公司 | A kind of chemical mechanical polishing liquid and its application |
| CN109971353A (en) * | 2017-12-27 | 2019-07-05 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
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