CN1900146A - Chemical and mechanical polishing liquid - Google Patents
Chemical and mechanical polishing liquid Download PDFInfo
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- CN1900146A CN1900146A CNA2005100279909A CN200510027990A CN1900146A CN 1900146 A CN1900146 A CN 1900146A CN A2005100279909 A CNA2005100279909 A CN A2005100279909A CN 200510027990 A CN200510027990 A CN 200510027990A CN 1900146 A CN1900146 A CN 1900146A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
The present invention discloses a kind of chemical and mechanical polishing fluid, which includes at least one kind of grinding grain, one kind of chemical additive and one kind of carrier, where the chemical additive is polycarboxylic acid and/or its salt. The chemical and mechanical polishing fluid can raise the flatness of the polished metal surface, lower the metal polishing rate obviously, optimize the dielectric polishing rate and expand technological parameter window.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
Development along with microelectronics, the very large scale integration chip integration is up to tens components and parts, characteristic dimension has entered nano level, this just requires the nearly hundred road technologies in the microelectronic technique, especially multilayer wiring, substrate, medium must carry out the leveling of the chemical machinery overall situation, and chemically machinery polished (CMP) has been proved to be best leveling method.
In cmp method, the polished surface of substrate is directly contacted with rotating polishing pad, exert pressure at backside of substrate simultaneously.During polishing, polishing pad rotates with operator's console, the power that while keeps down at backside of substrate, the liquid (being commonly referred to chemical mechanical polishing liquid) of abrasive material and chemically reactive solution composition is coated on the polishing pad, and this chemical mechanical polishing liquid begins to carry out polishing process with the film generation chemical reaction and the mechanical effect of polishing.Chemical mechanical polishing liquid is a kind of important factor in CMP, and can choose the polishing performance that changes of suitable chemical mechanical polishing liquid according to the needs of processing procedure.
In typical chemical mechanical polishing of metals, defect level is higher usually, especially has problems such as spot corrosion, limit erosion, corrosion.And polishing speed is also very high, and is bigger to the degree of injury of metallic surface, easily produces as problems such as scuffing, surface irregularity.As U.S. Pat 5,209,816, US6,039,891, US6,1502,60, US5,980,775, US6,068,787, US5,958,288, US6,451,697 and US6,6167,17 etc.
Summary of the invention
The objective of the invention is provides a kind of chemical mechanical polishing liquid in order to address the above problem.
The objective of the invention is to realize by following technical proposal: chemical mechanical polishing liquid of the present invention comprises at least a abrasive grains, a kind of chemical additive and a kind of carrier; Wherein, this chemical additive is polycarboxylic acid compound and/or its salt.
Chemical mechanical polishing liquid of the present invention can polish following metallic film material: aluminium, copper, tantalum, tantalum nitride, titanium, titanium oxide, silver, gold, ruthenium or the like are mainly used in the polished aluminum film.Compare with typical metallic substance chemical mechanical polishing liquid, the present invention uses specific chemical additive to reduce the medal polish defect level significantly, improves metallic surface planarization level.Typical metallic substance chemical mechanical polishing liquid all has higher medal polish speed, thereby be unfavorable for the intact of metallic surface, chemical mechanical polishing liquid of the present invention then can reduce the polishing speed of metal significantly, and prevent metallic corrosion, thereby reduce the medal polish defect level and improve metallic surface planarization level, improving the quality of metallic surface, thereby improve the qualification rate of product wafer significantly.
Chemical mechanical polishing liquid of the present invention not only can polish above-mentioned metallic film material, but also can polish figuratum wafer., simultaneously the differing materials on the wafer is polished during figuratum wafer in polishing, as the wafer of the pattern formed by aluminium, copper or tantalum and silicon-dioxide.
An outstanding feature of the present invention is that chemical mechanical polishing liquid of the present invention can not contain oxygenant, and can reach and the same polishing level of chemical mechanical polishing liquid that typically contains oxygenant.At the chemical mechanical polishing liquid that typically is used for the polishing metal, oxygenant is an indispensable moiety, and oxygenant is more unstable other composition in chemical mechanical polishing liquid, so the use of oxygenant can affect to the performance and life-span of chemical mechanical polishing liquid.Certainly, chemical mechanical polishing liquid of the present invention also can also contain oxygenant, with the polishing performance of further raising metallic surface.
Wherein, described polycarboxylic acid compound is the multipolymer of polyacrylic compounds and/or acrylic compounds, and described salt is ammonium salt, sylvite or sodium salt, and its molecular weight is 2,000～3, between 000,000.
The preferred following formula I compound of described polyacrylic compounds, multipolymer optimization styrene, MALEIC ANHYDRIDE or the acrylate of described acrylic compounds and the multipolymer of acrylic compounds:
Formula I
Wherein, R
1, R
2Be hydrogen atom or carbonatoms independently less than 3 alkyl.
This polyacrylic compounds preferably is a polyacrylic acid, the R among the promptly above-mentioned formula I
1, R
2Be hydrogen atom independently; The multipolymer of this acrylic compounds preferably is the acrylate acrylic copolymer; Their molecular weight is preferably 2,000～1, between 000,000, and this polyacrylic molecular weight more preferably 30,000.
This abrasive grains can be any abrasive grains of the prior art, preferably is silicon-dioxide, aluminum oxide, cerium dioxide, titanium dioxide and/or polymer abrasive grains.
This carrier is an inorganic carrier preferably, as water; Also can be the mixture of inorganic carrier and organic carrier, as the mixture of water and glycerol.
In chemical mechanical polishing liquid of the present invention, the concentration of this abrasive grains is that the concentration of 1～20 weight %, chemical additive is that 0.001～10 weight %, carrier are surplus.
Chemical mechanical polishing liquid of the present invention also preferably comprises inhibitor.
The concentration of described inhibitor preferably is 0.001～5 weight %, and described inhibitor is benzotriazole, imidazoles and/or pyrazoles, preferred benzotriazole.
The chemical mechanical polishing liquid that contains inhibitor of the present invention can also comprise monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt.
Preferred 0.1～10 weight % of the concentration of described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt, more preferably 0.3～1.0 weight %.
Described monocarboxylic acid is preferably acetate, and described di-carboxylic acid is preferably oxalic acid, Succinic Acid and/or tartrate.Described polycarboxylic acid is preferably citric acid, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, ethylenediamine tetraacetic acid (EDTA) and/or tannic acid, and described salt is preferably ammonium salt, sylvite and/or sodium salt.
The chemical mechanical polishing liquid that does not contain inhibitor of the present invention also can also comprise monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt.
Preferred 0.1～10 weight % of the concentration of described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt, more preferably 0.3～1.0 weight %.
Described monocarboxylic acid preferably is an acetate, described di-carboxylic acid preferably is oxalic acid, Succinic Acid and/or tartrate, described polycarboxylic acid preferably is citric acid, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, ethylenediamine tetraacetic acid (EDTA) and/or tannic acid, and described salt is ammonium salt, sylvite and/or sodium salt.
Chemical mechanical polishing liquid of the present invention preferably also comprises oxygenant.This oxygenant can be any oxygenant of the prior art, preferably is hydrogen peroxide, iron nitrate, organo-peroxide and/or inorganic peroxide.
Chemical mechanical polishing liquid of the present invention preferably also comprises tensio-active agent and/or complexing agent.
This tensio-active agent preferably is fatty alcohol-polyoxyethylene ether, polyvinyl alcohol, polyoxyethylene alkyl amine and/or alkylol amide.
This complexing agent preferably is the compound of phosphorous acidic group, azanol base, amine salt and/or amido.
Chemical mechanical polishing liquid of the present invention can also comprise one or more in dispersion agent, catalyzer and the pH regulator agent.
Another object of the present invention provides the purposes of chemical mechanical polishing liquid of the present invention in the polishing metal, and described metal is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or golden, preferred polished aluminum.
Positive progressive effect of the present invention is: chemical mechanical polishing liquid of the present invention can obviously reduce ratio of defects, improves metallic surface planarization level, reduces the polishing speed of metal significantly, has optimized dielectric polishing speed, enlarges the processing parameter window.
Description of drawings
Figure 1A is for after containing PAA chemical mechanical polishing liquid polishing, wafer surface corrosive microscope details in a play not acted out on stage, but told through dialogues figure, and wherein, the black matrix among the figure is a metallic aluminium, white is corrosion;
Figure 1B is after the chemical mechanical polishing liquid that contains PAA of the present invention polishes, wafer surface corrosive microscope details in a play not acted out on stage, but told through dialogues figure;
Fig. 2 A is for after containing PAA chemical mechanical polishing liquid polishing, the microscope details in a play not acted out on stage, but told through dialogues figure of wafer surface residual particles, and the black matrix among the figure is a metallic aluminium, white round dot is a residual particles;
Fig. 2 B is after the chemical mechanical polishing liquid that contains PAA of the present invention polishes, the microscope details in a play not acted out on stage, but told through dialogues figure of wafer surface residual particles;
Fig. 3 A is for after containing PAA chemical mechanical polishing liquid polishing, the microscope light field figure of wafer surface spot corrosion, and wherein the stain among the figure is spot corrosion;
Fig. 3 B is after the chemical mechanical polishing liquid that contains PAA of the present invention polishes, the microscope light field figure of wafer surface spot corrosion;
Fig. 4 A contains the chemical mechanical polishing liquid polishing of PAA for use is of the present invention before, the atomic force microscope figure of wafer surface roughness;
Fig. 4 B contains the chemical mechanical polishing liquid polishing of PAA for use is of the present invention after, the atomic force microscope figure of wafer surface roughness.
Embodiment
Embodiment 1
Chemical mechanical polishing liquid 1:20.0wt% silica dioxide granule, 10.0wt%PAA (molecular weight is 2000) and surplus are water, and pH is 7.7.
Embodiment 2
Chemical mechanical polishing liquid 2:20.0wt% silica dioxide granule, 10.0wt% acrylate acrylic copolymer (molecular weight is 2,000) and surplus are water, and pH is 7.7.
Embodiment 3
The silica dioxide granule of chemical mechanical polishing liquid 3:20.0wt%, 10.0wt%PAA (molecular weight is 2,000), 10.0wt% Succinic Acid and surplus are water, and pH is 7.7.
Embodiment 4
The silica dioxide granule of chemical mechanical polishing liquid 4:20.0wt%, 10.0wt%PAA (molecular weight is 2,000), 5.0wt%BTA and surplus are water, and pH is 7.7.
Embodiment 5
The silica dioxide granule of chemical mechanical polishing liquid 5:5.0wt%, 0.1wt%PAA (molecular weight is 30,000), 0.1wt%BTA, 0.5wt% Succinic Acid and surplus are water, and pH is 4.25.
Embodiment 6
Ammonium salt of the silica dioxide granule of chemical mechanical polishing liquid 6:3wt%, 0.006wt% polyacrylic acid (abbreviating PAA as) (molecular weight is 30,000) and surplus are water, and pH is 3.
Embodiment 7
The silica dioxide granule of chemical mechanical polishing liquid 7:3wt%, 0.006wt%PAA ammonium salt (molecular weight is 30,000), 0.1wt%BTA (benzotriazole) and surplus are water, and pH is 3.
Embodiment 8
The silica dioxide granule of chemical mechanical polishing liquid 8:3wt%, 0.004wt%PAA ammonium salt (molecular weight is 30,000), 0.1wt%BTA, 0.5wt% diethylenetriamine pentaacetic acid and surplus are water, pH is 3.
Embodiment 9
Chemical mechanical polishing liquid 9:6wt% silica dioxide granule, 0.12wt%PAA ammonium salt (molecular weight is 30,000), 0.05wt%BTA and surplus are water, and pH is 3.
Embodiment 10
Chemical mechanical polishing liquid 10:6wt% silica dioxide granule, 0.200wt%PAA ammonium salt (molecular weight is 30,000), 0.001wt%BTA and surplus are water, and pH is 3.
Embodiment 11
Chemical mechanical polishing liquid 11:1wt% silica dioxide granule, 0.001wt%PAA (molecular weight is 3,000,000) and surplus are water, and pH is 3.
Embodiment 12
Chemical mechanical polishing liquid 12:1wt% silica dioxide granule, 0.001wt% acrylate acrylic copolymer (molecular weight is 3,000,000) and surplus are water, and pH is 3.
Embodiment 13
Chemical mechanical polishing liquid 13:1wt% silica dioxide granule, 0.001wt%PAA (molecular weight is 3,000,000), 0.1wt% Succinic Acid and surplus are water, and pH is 3.
Embodiment 14
Chemical mechanical polishing liquid 14:1wt% silica dioxide granule, 0.001wt%PAA (molecular weight is 3,000,000), 0.1wt%BTA and surplus are water, and pH is 3.
Embodiment 15
Chemical mechanical polishing liquid 15:5.0wt% silica dioxide granule, 0.1wt%PAA (molecular weight is 30,000), 0.1wt.%BTA, 0.5wt% Succinic Acid, 0.5wt%H
2O
2With surplus be water, pH is 4.25.
The comparative example 1
Contrast chemical mechanical polishing liquid 1 ': 3wt% silica dioxide granule, surplus are water, and pH is 3.
Effect embodiment 1
Detect above-mentioned chemical mechanical polishing liquid 1 ', the influence of 1,5～9,15 pair of polishing speed, with they polished aluminum films, the processing parameter during polishing is: overdraft 2psi, rotating speed 100rpm, the rubbing head rotating speed 105rpm of polishing disk (300mm diameter), polishing slurries flow velocity 200ml/min.Experimental result sees Table 1.
Table 1
| Chemical mechanical polishing liquid | A1 polishing speed (A/min) |
| 1′ 1 5 6 7 8 9 15 | 655 120 170 200 199 206 130 190 |
Experimental result shows: chemical mechanical polishing liquid of the present invention all drops to the polishing speed of aluminium below the 400A/min.
Effect embodiment 2
Detect above-mentioned chemical mechanical polishing liquid 1 ', 1～14 pair remove the corrosive influence, with the aluminium film surface on their polished wafers, processing parameter during polishing is: overdraft 2psi, rotating speed 100rpm, the rubbing head rotating speed 105rpm of polishing disk (300mm diameter), polishing slurries flow velocity 200ml/min, experimental result is seen Figure 1A and 1B.Figure 1A for the contrast chemical mechanical polishing liquid 1 ' the result; Figure 1B is the result of above-mentioned chemical mechanical polishing liquid 6.
Experimental result shows: use chemical mechanical polishing liquid of the present invention can remove the corrosion of aluminium wafer surface significantly.Use the not corrosion (seeing Figure 1B) of aluminium wafer surface after the chemical mechanical polishing liquid polishing of the PAA of containing of the present invention, and use the contrast chemical mechanical polishing liquid 1 that do not contain PAA ' the aluminium wafer surface a large amount of corrosion (seeing Figure 1A) is arranged.The result of chemical mechanical polishing liquid 1～5,7～14 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 3
Detect above-mentioned chemical mechanical polishing liquid 1 ', 1～7,9～11,15 pair of influence of removing residual particles, they are used for aluminium film surface on the polished wafer, and the processing parameter during polishing is: overdraft 2psi, rotating speed 100rpm, the rubbing head rotating speed 105rpm of polishing disk (300mm diameter), polishing slurries flow velocity 200ml/min.After the polishing, chemical mechanical polishing liquid kept 30 minutes on the aluminium film, scrubbed the aluminium film surface with deionized water and PVA cylinder then.Experimental result is seen Fig. 2 A and 2B.Fig. 2 A for the contrast chemical mechanical polishing liquid 1 ' the result; Fig. 2 B is the result of above-mentioned chemical mechanical polishing liquid 6.
Experimental result shows: use chemical mechanical polishing liquid of the present invention can remove the residual particles at aluminium wafer surface edge significantly.Use the aluminium wafer surface edge after the chemical mechanical polishing liquid polishing of the PAA of containing of the present invention not have residual particles (seeing Fig. 2 B), and use the contrast chemical mechanical polishing liquid 1 that do not contain PAA ' aluminium wafer surface edge a large amount of residual particles (seeing Fig. 2 A) is arranged.The result of chemical mechanical polishing liquid 1～5,7,9～11,15 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 4
Detect above-mentioned chemical mechanical polishing liquid 1 ', 1～14 pair of influence of removing spot corrosion, they are used for aluminium film surface on the polished wafer, and the processing parameter during polishing is: overdraft 2psi, rotating speed 100rpm, the rubbing head rotating speed 105rpm of polishing disk (300mm diameter), polishing slurries flow velocity 200ml/min.Experimental result is seen Fig. 3 A and 3B, Fig. 3 A for the contrast chemical mechanical polishing liquid 1 ' the result; Fig. 3 B is the result of above-mentioned chemical mechanical polishing liquid 6.
Experimental result shows: chemical mechanical polishing liquid of the present invention can be removed the spot corrosion of wafer surface.Use the aluminium wafer surface after the chemical mechanical polishing liquid polishing of the PAA of containing of the present invention not have spot corrosion (seeing Fig. 3 B), and use the contrast chemical mechanical polishing liquid 1 that do not contain PAA ' the aluminium wafer surface a large amount of spot corrosion (seeing Fig. 3 A) is arranged.The result of chemical mechanical polishing liquid 1～5,7～14 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 5
Detect the influence of the roughness on 5～11 pairs of aluminium surfaces of above-mentioned chemical mechanical polishing liquid.They are used for aluminium film surface on the polished wafer, and the processing parameter during polishing is: overdraft 2psi, rotating speed 100rpm, the rubbing head rotating speed 105rpm of polishing disk (300mm diameter), polishing slurries flow velocity 200ml/min.Experimental result is seen Fig. 4 A and Fig. 4 B.
Experimental result shows: chemical mechanical polishing liquid of the present invention can reduce the roughness of wafer surface significantly.Use the Rms (roughness) of chemical mechanical polishing liquid polishing of the present invention aluminium wafer surface before to be 18.7A, and use the Rms (roughness) of the aluminium wafer surface after chemical mechanical polishing liquid 6 polishing of the PAA of containing of the present invention to be reduced to 1.86A, reduced more than 10 times the effect highly significant.The result of chemical mechanical polishing liquid 5,7～11 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 6
Above-mentioned chemical mechanical polishing liquid 5～9 is respectively applied for pattern is made of in polishing aluminium and silicon-dioxide wafer.Processing parameter during polishing is: overdraft 2psi, rotating speed 100rpm, the rubbing head rotating speed 105rpm of polishing disk (300mm diameter), polishing slurries flow velocity 200ml/min.The polishing speed of aluminium and silicon-dioxide sees Table 2.
Table 2
| Chemical mechanical polishing liquid | Silicon-dioxide polishing speed (A/min) | Aluminium polishing speed (A/min) | Silicon-dioxide polishing speed/aluminium polishing speed |
| 5 6 7 8 | 270 350 372 170 | 170 200 199 206 | 1.59 1.75 1.87 0.82 |
| 9 | 200 | 130 | 1.54 |
The result shows: chemical mechanical polishing liquid of the present invention not only can the polishing metal wafer, but also can polish the wafer that contains pattern.
Claims (20)
1, a kind of chemical mechanical polishing liquid comprises at least a abrasive grains, a kind of chemical additive and a kind of carrier, it is characterized in that this chemical additive is polycarboxylic acid compound and/or its salt.
2, chemical mechanical polishing liquid according to claim 1 is characterized in that described polycarboxylic acid compound is the multipolymer of polyacrylic compounds and/or acrylic compounds, and described salt is ammonium salt, sylvite or sodium salt, its molecular weight is 2,000～3, between 000,000.
3, chemical mechanical polishing liquid according to claim 2 is characterized in that this polyacrylic compounds is a polyacrylic acid, and the multipolymer of this acrylic compounds is the acrylate acrylic copolymer, and its molecular weight is 2,000～1, between 000,000.
4, chemical mechanical polishing liquid according to claim 3 is characterized in that this polyacrylic molecular weight is 30,000.
5, chemical mechanical polishing liquid according to claim 1 is characterized in that this carrier is a water.
6, chemical mechanical polishing liquid according to claim 1 is characterized in that this carrier is water and glycerol.
7, chemical mechanical polishing liquid according to claim 1, the concentration that it is characterized in that abrasive grains are that the concentration of 1～20 weight %, chemical additive is that 0.001～10 weight %, carrier are surplus.
8, chemical mechanical polishing liquid according to claim 1 is characterized in that also comprising inhibitor.
9, chemical mechanical polishing liquid according to claim 8, the concentration that it is characterized in that described inhibitor are 0.001～5 weight %.
10, chemical mechanical polishing liquid according to claim 8 is characterized in that described inhibitor is benzotriazole, imidazoles and/or pyrazoles.
11, chemical mechanical polishing liquid according to claim 8 is characterized in that also comprising monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt.
12, chemical mechanical polishing liquid according to claim 11, the concentration that it is characterized in that described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt are 0.1～10 weight %.
13, chemical mechanical polishing liquid according to claim 12, the concentration that it is characterized in that described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt are 0.3～1.0 weight %.
14, chemical mechanical polishing liquid according to claim 11, it is characterized in that described monocarboxylic acid is an acetate, described di-carboxylic acid is oxalic acid, Succinic Acid and/or tartrate, described polycarboxylic acid is citric acid, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, ethylenediamine tetraacetic acid (EDTA) and/or tannic acid, and described salt is ammonium salt, sylvite and/or sodium salt.
15, chemical mechanical polishing liquid according to claim 1 is characterized in that also comprising monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt.
16, chemical mechanical polishing liquid according to claim 15, the concentration that it is characterized in that described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt are 0.1～10 weight %.
17, chemical mechanical polishing liquid according to claim 16, the concentration that it is characterized in that described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt are 0.3～1.0 weight %.
18, chemical mechanical polishing liquid according to claim 15, it is characterized in that described monocarboxylic acid is an acetate, described di-carboxylic acid is oxalic acid, Succinic Acid and/or tartrate, described polycarboxylic acid is citric acid, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, ethylenediamine tetraacetic acid (EDTA) and/or tannic acid, and described salt is ammonium salt, sylvite and/or sodium salt.
19, chemical mechanical polishing liquid according to claim 1 is characterized in that also comprising oxygenant.
20, the purposes of chemical mechanical polishing liquid as claimed in claim 1 in the polishing metal is characterized in that described metal is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or golden.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005100279909A CN1900146B (en) | 2005-07-21 | 2005-07-21 | Chemical and mechanical polishing liquid |
| PCT/CN2006/001702 WO2007009365A1 (en) | 2005-07-21 | 2006-07-17 | Chemical mechanical polishing liquid |
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|---|---|---|---|
| CN2005100279909A CN1900146B (en) | 2005-07-21 | 2005-07-21 | Chemical and mechanical polishing liquid |
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| CN1900146A true CN1900146A (en) | 2007-01-24 |
| CN1900146B CN1900146B (en) | 2012-02-29 |
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| WO (1) | WO2007009365A1 (en) |
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| CN101550319A (en) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
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| WO2004101695A1 (en) * | 2003-05-15 | 2004-11-25 | Showa Denko K.K. | Polishing composition and polishing method |
| US20050104048A1 (en) * | 2003-11-13 | 2005-05-19 | Thomas Terence M. | Compositions and methods for polishing copper |
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| WO2007009365A1 (en) | 2007-01-25 |
| CN1900146B (en) | 2012-02-29 |
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