CN101747842A - Chemical-mechanical polishing solution - Google Patents
Chemical-mechanical polishing solution Download PDFInfo
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- CN101747842A CN101747842A CN200810207470A CN200810207470A CN101747842A CN 101747842 A CN101747842 A CN 101747842A CN 200810207470 A CN200810207470 A CN 200810207470A CN 200810207470 A CN200810207470 A CN 200810207470A CN 101747842 A CN101747842 A CN 101747842A
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Abstract
The invention discloses chemical-mechanical polishing solution, containing one or more star polymers containing pigment affinity groups, ground particles and water. The polishing solution can obviously lower the removal rate of polysilicon, reduce the selection ratio of polysilicon to silicon dioxide and obviously improve the planarization efficiency of polysilicon.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
For the polishing of polysilicon, be mainly used in two kinds of chips at present, a kind of is dynamic RAM (DRAM), a kind of is flash memory (Flash).The latter tends to relate to the polishing to silicon-dioxide in application.
In the prior art, be that the alkaline slurry of abrasive grains is come polishing polycrystalline silicon layer and silicon-dioxide (as HDP) layer mainly to contain silicon-dioxide, its removal rate of polysilicon is often much higher than the removal speed of silicon-dioxide, easily cause the excessive removal of polysilicon and produce depression, influence technology subsequently.
US2003/0153189A1 discloses a kind of chemical mechanical polishing liquid and using method thereof that is used for the polysilicon polishing.This polishing fluid comprises a kind of polymeric surfactant and a kind of abrasive grains that is selected from aluminum oxide and cerium oxide, and this polymeric surfactant is the polycarboxylate tensio-active agent.Can make the polishing speed in polysilicon surface bulk zone be much higher than polishing speed in the groove with this slurry, thereby reduce depression.US2003/0216003A1 and US2004/0163324A1 disclose the method for a kind of Flash of manufacturing.Comprising a kind of polishing fluid of polishing polycrystalline silicon, comprise at least a containing-N (OH) in this polishing fluid ,-NH (OH) ,-NH
2(OH) compound of group.The polysilicon of this slurry selects ratio greater than 50 with the polishing of silicon-dioxide.US2004/0014321A1 discloses a kind of acid polishing slurry that comprises abrasive grains and oxygenant, uses this slurry can improve polysilicon and selects ratio with the polishing of silicon-dioxide.US2004/0123528A1 discloses a kind of acid polishing slurry that comprises abrasive grains and anionic compound.This anionic compound can reduce the removal speed of protective layer film, improves the removal rate selection ratio of polysilicon and protective layer film.US2005/0130428A1 and CN1637102A disclose a kind of slurry that is used for multi crystal silicon chemical mechanical polishing.This slurry comprises one or more can form passivation layer on polysilicon layer nonionogenic tenside and a kind ofly can form that second passivation layer can reduce silicon nitride or silicon oxide is removed the second surface promoting agent of speed.This ionic surfactant pack is drawn together oxyethane～propylene oxide block copolymer alcohol and/or oxyethane～propylene oxide triblock polymer.This slurry can be with the removal rate selection of polysilicon and isolator than reducing about 50% at least.
Summary of the invention
Technical problem to be solved by this invention is to have overcome the existing chemical mechanical polishing liquid that is used for polishing polycrystalline silicon and silicon dioxide layer, polysilicon is removed the removal speed of speed far above silicon-dioxide, easily cause the excessive removal of polysilicon and produce the defective of depression, have lower polysilicon and remove speed and lower polysilicon are selected ratio to silicon-dioxide chemical mechanical polishing liquid and provide a kind of.
Chemical mechanical polishing liquid of the present invention contains one or more star-type polymers that contain the pigment affinity groups, abrasive grains and water.
Wherein, the described star-type polymer that contains the pigment affinity groups can significantly reduce removal rate of polysilicon, but do not influence the removal speed of silicon-dioxide, thereby reduce the selection ratio of polysilicon and silicon-dioxide, reduce depression, significantly improve the planarization efficiency of polysilicon.
Among the present invention, described pigment affinity groups is meant the group that contains one or more elements in aerobic, nitrogen and the sulphur, one or more that preferable is in hydroxyl, amino and the carboxyl; Described star-type polymer is meant that with symmetry centre in the molecule be the center, connects the polymkeric substance of three or three above molecular chains with the radiation form.The described kind that contains pigment affinity groups contained in the star-type polymer of pigment affinity groups can be one or more.
The described star-type polymer that contains the pigment affinity groups can be homopolymer or multipolymer.Form the polymerization single polymerization monomer of this polymkeric substance preferable comprise in following one or more: acrylic monomer, acrylic ester monomer, acrylamide monomers and oxyethane.What wherein, described acrylic monomer was preferable is vinylformic acid and/or methacrylic acid; Described acrylic ester monomer is preferable is in methyl acrylate, methyl methacrylate, ethyl propenoate, Jia Jibingxisuanyizhi, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate, Hydroxyethyl acrylate and the hydroxyethyl methylacrylate one or more; What described acrylamide monomers was preferable is acrylamide and/or Methacrylamide.
Preferable, form monomer in the above-mentioned star-type polymer that contains the pigment affinity groups and can also contain other polymerization single polymerization monomer, as other vinyl monomers, optimal ethylene, propylene, vinylbenzene and p-methylstyrene.Among the present invention, described vinyl monomer is meant the polymerization single polymerization monomer that contains vinyl units.
Among the present invention, the star-type polymer that preferably contains the pigment affinity groups is the star-like homopolymer of polyacrylic acid, the binary star copolymer of vinylbenzene and Hydroxyethyl acrylate, the binary star copolymer of p-methylstyrene and oxyethane, the binary star copolymer of vinylbenzene and oxyethane, the binary star copolymer of methyl methacrylate and oxyethane, the binary star copolymer of methyl acrylate and Hydroxyethyl acrylate, the binary star copolymer of vinylformic acid and Hydroxyethyl acrylate, and vinylformic acid, in the ternary star copolymer of butyl acrylate and acrylamide one or more.
Among the present invention, the number-average molecular weight of the described star-type polymer that contains the pigment affinity groups is preferable is 800-50000, and that better is 800-10000.The described star-type polymer content that contains the pigment affinity groups is preferable is mass percent 0.0005%～3%, and better is 0.001%～1%;
Described abrasive grains is the conventional various abrasive grains that use in this area, can be selected from silicon-dioxide, cerium dioxide, titanium dioxide and the polymer abrasive grains such as the polystyrene of silicon-dioxide, aluminium coating of silicon-dioxide, aluminium sesquioxide, adulterated al one or more.That the particle diameter of abrasive grains is preferable is 20～150nm, and that better is 30～120nm.What the content of described abrasive grains was preferable is mass percent 0.1～30%, is more preferred from mass percent 1～20%.
What the pH of polishing fluid of the present invention was preferable is 7～12.
In the polishing fluid of the present invention, can also contain other conventional additives of this area, as pH regulator agent, viscosity modifier and defoamer etc.
Polishing fluid of the present invention is by the simple uniform mixing of mentioned component, and adopting the pH regulator agent to be adjusted to suitable pH value afterwards can make.The pH regulator agent can be selected the conventional pH regulator agent in this area for use, as potassium hydroxide, ammoniacal liquor and nitric acid etc.
Among the present invention, agents useful for same and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: polishing fluid of the present invention has lower polysilicon and removes speed and polysilicon to the removal rate selection ratio of silicon-dioxide, can reduce depression, significantly improves the planarization efficiency of polysilicon.
Embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.
Embodiment 1～22
Table 1 has provided the prescription of polishing fluid 1～22 of the present invention, by table 1 each component is mixed, and water is supplied mass percent 100%, adopts potassium hydroxide and nitric acid to be adjusted to suitable pH value afterwards and can make each polishing fluid.
Table 1 polishing fluid 1～22 prescription
Effect embodiment
Table 2 has provided the prescription of contrast polishing fluid 1 and polishing fluid of the present invention 23～29, by table 2 each component is mixed, and water is supplied mass percent to 100%, adopts potassium hydroxide and nitric acid to be adjusted to suitable pH value afterwards and can make each polishing fluid.
Above-mentioned each polishing fluid is used for polishing polycrystalline silicon and silicon-dioxide, and the processing parameter of polishing is: overdraft 3psi, the rotating speed 70rpm of polishing disk (14 inches of diameters), rubbing head rotating speed 80rpm, polishing slurries flow velocity 200ml/min, polishing pad are politex, and polishing machine is Logitech LP50.The result is as shown in table 2.
The prescription of table 2 contrast polishing fluid 1 and polishing fluid 23～29 reaches the removal speed to polysilicon and silicon-dioxide
By contrast polishing fluid 1 and polishing fluid of the present invention 23～25 in the table 2 as seen, after adding contains the star-type polymer of pigment affinity groups, it is constant substantially that silicon-dioxide is removed speed, and polysilicon removal speed reduces significantly, and polysilicon also reduces significantly to the selection ratio of silicon-dioxide thereupon.The abrasive grains content of polishing fluid 26～29 and pH have different the variation, and lower polysilicon is removed speed and lower polysilicon is selected ratio to the polishing of silicon-dioxide but all have.
Claims (16)
1. chemical mechanical polishing liquid, it contains one or more star-type polymers that contain the pigment affinity groups, abrasive grains and water.
2. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described pigment affinity groups is one or more in hydroxyl, amino and the carboxyl.
3. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: form the described polymerization single polymerization monomer that contains the star-type polymer of pigment affinity groups and comprise in following one or more: acrylic monomer, acrylic ester monomer, acrylamide monomers and oxyethane.
4. chemical mechanical polishing liquid as claimed in claim 3 is characterized in that: described acrylic monomer is vinylformic acid and/or methacrylic acid; Described acrylic ester monomer is one or more in methyl acrylate, methyl methacrylate, ethyl propenoate, Jia Jibingxisuanyizhi, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate, Hydroxyethyl acrylate and the hydroxyethyl methylacrylate; Described acrylamide monomers is acrylamide and/or Methacrylamide.
5. the chemical mechanical polishing liquid of stating as claim 3 is characterized in that: the monomer that forms in the described star-type polymer that contains the pigment affinity groups also comprises other vinyl monomers.
6. chemical mechanical polishing liquid as claimed in claim 5 is characterized in that: described other vinyl monomers are ethene, propylene, vinylbenzene and p-methylstyrene.
7. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that: the described star-type polymer that contains the pigment affinity groups is the star-like homopolymer of polyacrylic acid, the binary star copolymer of vinylbenzene and Hydroxyethyl acrylate, the binary star copolymer of p-methylstyrene and oxyethane, the binary star copolymer of vinylbenzene and oxyethane, the binary star copolymer of methyl methacrylate and oxyethane, the binary star copolymer of methyl acrylate and Hydroxyethyl acrylate, the binary star copolymer of vinylformic acid and Hydroxyethyl acrylate, and vinylformic acid, in the ternary star copolymer of butyl acrylate and acrylamide one or more.
8. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the described number-average molecular weight that contains the star-type polymer of pigment affinity groups is 800-50000.
9. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the described content that contains the star-type polymer of pigment affinity groups is mass percent 0.0005～3%.
10. chemical mechanical polishing liquid as claimed in claim 9 is characterized in that: the described content that contains the star-type polymer of pigment affinity groups is mass percent 0.001～1%.
11. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described abrasive grains is one or more in silicon-dioxide, cerium dioxide, titanium dioxide and the polymer abrasive grains of silicon-dioxide, aluminium coating of silicon-dioxide, aluminium sesquioxide, adulterated al.
12. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described abrasive grains is mass percent 0.1～30%.
13. chemical mechanical polishing liquid as claimed in claim 12 is characterized in that: the content of described abrasive grains is mass percent 1～20%.
14. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the particle diameter of described abrasive grains is 20～150nm.
15. chemical mechanical polishing liquid as claimed in claim 14 is characterized in that: the particle diameter of described abrasive grains is 30～120nm.
16. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the pH of described polishing fluid is 7～12.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200810207470.XA CN101747842B (en) | 2008-12-19 | 2008-12-19 | Chemical-mechanical polishing solution |
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| CN200810207470.XA CN101747842B (en) | 2008-12-19 | 2008-12-19 | Chemical-mechanical polishing solution |
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| CN101747842B CN101747842B (en) | 2014-12-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103814102A (en) * | 2011-09-20 | 2014-05-21 | 堺化学工业株式会社 | Composite particles for polishing glass |
Citations (9)
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| EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| CN1644640A (en) * | 2003-12-19 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for controlled polishing of copper |
| CN1699444A (en) * | 2004-02-23 | 2005-11-23 | Cmp罗姆和哈斯电子材料控股公司 | Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers |
| CN1900146A (en) * | 2005-07-21 | 2007-01-24 | 安集微电子（上海）有限公司 | Chemical and mechanical polishing liquid |
| CN101143996A (en) * | 2006-09-15 | 2008-03-19 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101153206A (en) * | 2006-09-29 | 2008-04-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for polishing polysilicon |
| CN101168647A (en) * | 2006-10-27 | 2008-04-30 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101195729A (en) * | 2006-12-08 | 2008-06-11 | 安集微电子（上海）有限公司 | Application of non-ionic polyalcohol in producing and using self-stopping polysilicon polishing solution |
| CN101280158A (en) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing slurry for polysilicon |
-
2008
- 2008-12-19 CN CN200810207470.XA patent/CN101747842B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1106663A1 (en) * | 1999-12-08 | 2001-06-13 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| TW526251B (en) * | 1999-12-08 | 2003-04-01 | Eastman Kodak Co | Aqueous slurry and method for removing silicon dioxide in preference to silicon nitride, and slurry for polishing silica and silicon nitride |
| CN1644640A (en) * | 2003-12-19 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for controlled polishing of copper |
| CN1699444A (en) * | 2004-02-23 | 2005-11-23 | Cmp罗姆和哈斯电子材料控股公司 | Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers |
| CN1900146A (en) * | 2005-07-21 | 2007-01-24 | 安集微电子（上海）有限公司 | Chemical and mechanical polishing liquid |
| CN101143996A (en) * | 2006-09-15 | 2008-03-19 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101153206A (en) * | 2006-09-29 | 2008-04-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for polishing polysilicon |
| CN101168647A (en) * | 2006-10-27 | 2008-04-30 | 安集微电子（上海）有限公司 | Chemical mechanical polishing fluid for polishing polycrystalline silicon |
| CN101195729A (en) * | 2006-12-08 | 2008-06-11 | 安集微电子（上海）有限公司 | Application of non-ionic polyalcohol in producing and using self-stopping polysilicon polishing solution |
| CN101280158A (en) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing slurry for polysilicon |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103814102A (en) * | 2011-09-20 | 2014-05-21 | 堺化学工业株式会社 | Composite particles for polishing glass |
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Effective date of registration: 20160928 Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee after: Anji Microelectronics (Shanghai) Co., Ltd. Address before: 201203, room 5, building 3000, 613-618 East Avenue, Zhangjiang hi tech park, Shanghai, Pudong New Area Patentee before: Anji Microelectronics (Shanghai) Co., Ltd. |
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Address after: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee after: Anji microelectronic technology (Shanghai) Limited by Share Ltd Address before: 201201 Pudong New Area East Road, No. 5001 Jinqiao Export Processing Zone (South) T6-9 floor, the bottom of the Patentee before: Anji Microelectronics (Shanghai) Co., Ltd. |