CN101535431B - A chemical-mechanical polishing liquid for polishing polysilicon - Google Patents

A chemical-mechanical polishing liquid for polishing polysilicon Download PDF

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Publication number
CN101535431B
CN101535431B CN200780037469.0A CN200780037469A CN101535431B CN 101535431 B CN101535431 B CN 101535431B CN 200780037469 A CN200780037469 A CN 200780037469A CN 101535431 B CN101535431 B CN 101535431B
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Prior art keywords
polishing
polysilicon
polishing fluid
abrasive grains
silicon
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CN101535431A (en
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荆建芬
杨春晓
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Anji Microelectronics Shanghai Co Ltd
Anji Microelectronics Co Ltd
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Anji Microelectronics Shanghai Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Abstract

A chemical-mechanical polishing liquid for polishing polysilicon is disclosed, which comprises abrasive particles and water, and is characterized in that further comprises one or more kind of quaternary ammonium-type cationic surfactants. The polishing liquid can polish polysilicon better under basic condition and may significantly reduce the removal rate of polysilicon and the selectivity ratio of polysilicon and SiO2, and may obviously improve the planarizartion-efficiency of polysilicon.

Description

A kind of chemical mechanical polishing liquid that is used for polishing polycrystalline silicon
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid, relate in particular to a kind of chemical mechanical polishing liquid that is used for polishing polycrystalline silicon.
Background technology
In unicircuit was made, the standard of interconnection technique deposited one deck again improving above one deck, make to have formed irregular pattern at substrate surface.A kind of flattening method that uses in the prior art is exactly chemically machinery polished (CMP), and CMP technology just is to use a kind of mixture and polishing pad that contains abrasive material to remove to polish a silicon chip surface.In typical cmp method, substrate is directly contacted with rotating polishing pad, exert pressure at substrate back with a loads.During polishing; Pad and operator's console rotation; The power that keeps down at substrate back simultaneously is applied to abrasive material and chemically reactive solution (being commonly referred to polishing fluid or polishing slurries) on the pad, and this polishing fluid begins to carry out polishing process with the film generation chemical reaction that is polishing.
For the polishing of polysilicon, be mainly used in two kinds of chips at present, a kind of is DRAM, a kind of Flash. of being latter often can relate to the polishing to silicon-dioxide in using in to the polishing of polysilicon.
Main utilization in the past is that the alkaline slurry of abrasive grains is come under the situation of polishing polycrystalline silicon layer and silicon dioxide layer with silicon-dioxide; Removal rate of polysilicon often than silicon-dioxide to remove speed much higher; Be prone to cause the excessive removal of polysilicon and produce depression, influence technology subsequently.
Therefore, removing the too high problem that produces the surface depression of speed because of polysilicon in the glossing needs to be resolved hurrily.Patent documentation US2003/0153189A1 discloses a kind of chemical mechanical polishing liquid and method that is used for the polysilicon polishing; This polishing fluid comprises a kind of polymeric surfactant and a kind of abrasive grains that is selected from aluminum oxide and cerium oxide; This polymeric surfactant is the polycarboxylate tensio-active agent; Can make the polishing speed in polysilicon surface bulk zone be much higher than the polishing speed in the groove with this slurry, thereby reduce depression.Patent documentation US2005/0130428A1 and CN 1637102A disclose a kind of slurry that is used for multi crystal silicon chemical mechanical polishing, and this paste composition comprises that one or more form passivation layer on polysilicon layer nonionogenic tenside and a kind of can form that second passivation layer can reduce silicon nitride or silicon oxide is removed the second surface promoting agent of speed.This nonionogenic tenside comprises a kind of compound that is selected from the group that the pure and mild epoxy ethane-epoxy propane triblock polymer of ethylene oxide-propylene oxide block copolymer forms at least, and this slurry can be removed speed and isolator with polysilicon and remove selection between the speed than reducing about 50% at least.
Summary of the invention
The objective of the invention is for polishing polycrystalline silicon preferably under alkaline condition; The polishing speed of reduction polysilicon and polysilicon are than the polishing speed ratio of silicon-dioxide; Significantly improve the planarization efficiency of polysilicon, thereby provide-kind be used for the chemical mechanical polishing liquid of polishing polycrystalline silicon.
Polishing fluid of the present invention comprises abrasive grains and water, it is characterized in that also comprising one or more quaternary ammonium salt cationic surfactants.Described quaternary ammonium salt cationic surfactant is mono-quaternaries type and/or double type (Gemini) quaternary cationics.
Among the present invention, described mono-quaternaries type cats product is R 1R 2N +R 3R 4X -, wherein: R 1For-C mH 2m+1, 8≤m≤22; R 2And R 3Identical, for-CH 3Or-C 2H 5R 4And R 1Identical, or R 4For-CH 3,-C 2H 5,-CH 2-C 6H 5Or-CH 2CH 2OH; X -Be Cl -, Br -, CH 3SO 4 -, NO 3 -Or C 6H 5 -SO 4 -
Among the present invention, described double type (Gemini) quaternary cationics is (R 1R 2N +R 3X -) 2R 5, wherein: R 1For-C mH 2m+1, 8≤m≤18; R 2And R 3Identical, for-CH 3Or-C 2H 5R 5Be phenylenedimethylidyne, polymethylene-(CH 2) n-, 2≤n≤30, or polyoxyethylene groups-CH 2CH 2(OCH 2CH 2) n-, 1≤n≤30; X is Cl -Or Br -
Among the present invention, the weight percent concentration of described quaternary ammonium salt cationic surfactant preferably is 0.0001～5%, more preferably is 0.001～1%.
Among the present invention, the pH value of described polishing fluid preferably is 7～12.
Abrasive grains described in the invention can be silicon-dioxide, cerium dioxide, titanium oxide and/or the high molecular polymer abrasive grains of silicon-dioxide, aluminum oxide, adulterated al or aluminium coating.The weight percent concentration of described abrasive grains is preferably 0.5～30%, more preferably is 2～30%.
Polishing fluid of the present invention can also comprise the pH regulator agent, and viscosity modifier and/or skimmer reach goal of the invention of the present invention.
Polishing fluid of the present invention can be made by the simple mixing of top said component.
Positive progressive effect of the present invention is: polishing fluid of the present invention can be under alkaline condition polishing polycrystalline silicon preferably; And can significantly reduce the selection ratio of removal rate of polysilicon and polysilicon and silicon-dioxide, significantly improve the planarization efficiency of polysilicon.
Embodiment
Mode through embodiment further specifies the present invention below, does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～6
Provided the embodiment 1～6 of the chemical mechanical polishing liquid of polishing polycrystalline silicon in the table 1, following polishing fluid simply mixes by the component of giving in the table, is adjusted to required pH value with pH regulator agent well known in the art and gets final product, and water is surplus.
Figure GSB00000878388800041
Table 1 Chemico-mechanical polishing slurry for polysilicon embodiment 1～6
Effect embodiment 1
The removal speed of table 2 polishing fluid 1～20 and composition, pH value, polysilicon and the silicon-dioxide of contrast polishing fluid 1 and selection ratio
Figure GSB00000878388800051
By table 2 data presentation, compare with the polishing fluid that does not add quaternary ammonium salt cationic surfactant, polishing fluid 1～20 all in various degree reduction removal rate of polysilicon and polysilicon selection ratio with silicon-dioxide.
Processing parameter during polishing is: rotating speed 70rpm, rubbing head rotating speed 80rpm, polishing slurries flow velocity 200ml/min, the polishing pad of overdraft 3psi, polishing disk (14 inches of diameters) is that PPG fast pad CS7, polishing machine are LogitechLP50.
Raw material used in the present invention and reagent are the commercially available prod.

Claims (6)

1. chemical mechanical polishing liquid that is used for polishing polycrystalline silicon; Comprise abrasive grains and water; It is characterized in that: also comprise one or more quaternary ammonium salt cationic surfactants; Wherein said quaternary ammonium salt cationic surfactant is the double type quaternary cationics, and wherein, described double type quaternary cationics is (R 1R 2N +R 3X -) 2R 5, wherein: R 1For-C mH 2m+1, 8≤m≤18; R 2And R 3Identical, for-CH 3Or-C 2H 5R 5Be phenylenedimethylidyne, polymethylene-(CH 2) n-, 2≤n≤30, or polyoxyethylene groups-CH 2CH 2-(OCH 2CH 2) n-, 1≤n≤30; X -Be Cl -Or Br -, wherein, the weight percent concentration of described quaternary ammonium salt cationic surfactant is 0.0001～5%.
2. polishing fluid according to claim 1 is characterized in that: the weight percent concentration of described quaternary ammonium salt cationic surfactant is 0.001～1%.
3. polishing fluid according to claim 1 is characterized in that: the pH value of polishing fluid is 7～12.
4. polishing fluid according to claim 1 is characterized in that: described abrasive grains is silicon-dioxide, cerium dioxide, titanium oxide and/or the high molecular polymer abrasive grains of silicon-dioxide, aluminium sesquioxide, adulterated al or aluminium coating.
5. polishing fluid according to claim 1 is characterized in that: the weight percent of described abrasive grains is 0.5～30%.
6. polishing fluid according to claim 5 is characterized in that: the weight percent of described abrasive grains is 2～30%.
CN200780037469.0A 2006-10-27 2007-10-22 A chemical-mechanical polishing liquid for polishing polysilicon Active CN101535431B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200780037469.0A CN101535431B (en) 2006-10-27 2007-10-22 A chemical-mechanical polishing liquid for polishing polysilicon

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN200610117669.4 2006-10-27
CNA2006101176694A CN101168647A (en) 2006-10-27 2006-10-27 Chemical mechanical polishing fluid for polishing polycrystalline silicon
CN200780037469.0A CN101535431B (en) 2006-10-27 2007-10-22 A chemical-mechanical polishing liquid for polishing polysilicon
PCT/CN2007/003018 WO2008052423A1 (en) 2006-10-27 2007-10-22 A chemical-mechanical polishing liquid for polishing polysilicon

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CN101535431B true CN101535431B (en) 2012-12-19

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CN101451049A (en) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 Chemico-mechanical polishing liquid
CN101665664B (en) * 2008-09-05 2013-08-28 安集微电子（上海）有限公司 Quaternary ammonium salt cationic surfactant and application of chemical mechanical polishing solution
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN101747842B (en) * 2008-12-19 2014-12-31 安集微电子（上海）有限公司 Chemical-mechanical polishing solution
CN101928519A (en) * 2009-06-23 2010-12-29 安集微电子（上海）有限公司 Chemical mechanical polishing solution and preparation method thereof
CN102108261A (en) * 2009-12-25 2011-06-29 安集微电子（上海）有限公司 Chemical and mechanical polishing solution
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
CN103205205B (en) * 2012-01-16 2016-06-22 安集微电子（上海）有限公司 A kind of alkaline chemical mechanical polishing liquid
CN104745091A (en) * 2013-12-26 2015-07-01 安集微电子（上海）有限公司 Chemical mechanical polishing liquid and use method thereof
CN110122488A (en) * 2019-06-03 2019-08-16 临沂康爱特化工科技有限公司 A kind of oil field return water filling compound disinfectant and preparation method thereof
US20220348788A1 (en) * 2021-04-27 2022-11-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect reduction

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