CN103160207A - Metal chemico-mechanical polishing sizing agent and application thereof - Google Patents
Metal chemico-mechanical polishing sizing agent and application thereof Download PDFInfo
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- CN103160207A CN103160207A CN201110424891XA CN201110424891A CN103160207A CN 103160207 A CN103160207 A CN 103160207A CN 201110424891X A CN201110424891X A CN 201110424891XA CN 201110424891 A CN201110424891 A CN 201110424891A CN 103160207 A CN103160207 A CN 103160207A
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- acid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
Abstract
The invention provides a metal chemico-mechanical polishing sizing agent and application thereof. The sizing agent comprises grinding particles, complexing agents, oxidants, corrosion inhibitors and at least one kind of phosphate ester surfactant. The sizing agent can maintain high copper removing rate and improve disk-shaped concave and polished windows of a copper wire after polishing. Few pollutants exist on the surface of polished copper, and no defects such as corrosion exist.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing slurry and application thereof, relate in particular to a kind of chemical mechanical polishing slurry for copper and application thereof.
Background technology
Along with the development of semiconductor technology, the microminiaturization of electronic unit has comprised millions of transistors in a unicircuit.In operational process, at the transistor of the rapid switch of energy of having integrated huge quantity like this, traditional aluminium or aluminium alloy interconnection line, make the signal transmission speed reduce, and need to consume mass energy in the current delivery process, in a sense, also hindered the development of semiconductor technology.In order to further develop, people begin to seek the use of adopting the material that has higher electrical properties to replace aluminium.As everyone knows, the resistance of copper is little, has good electroconductibility, and this has accelerated in the circuit transmission speed of signal between transistor, and less stray capacitance ability also can be provided, and the small electric road is for electromigratory susceptibility.These electrical advantages all make copper have good development prospect in semiconductor technology evolves.
But find in the ic manufacturing process of copper, copper can move or diffuse into the transistor area of unicircuit, thereby have a negative impact for semi-conductive transistorized performance, thereby the interconnection line of copper can only be with the inlay manufacturing, that is: form groove in the first layer, fill copper barrier layer and copper in groove, form plain conductor and cover on dielectric layer.Then by chemically machinery polished, copper/copper barrier layer unnecessary on dielectric layer is removed, stayed single interconnection line in groove.The CMP (Chemical Mechanical Polishing) process of copper generally is divided into 3 steps, the 1st step was first to use higher overdraft, remove copper a large amount of on substrate surface and stay certain thickness copper to remove soon and efficiently speed, the 2nd step removed remaining metallic copper and was parked in the blocking layer with the low speed of removing, the 3rd step was removed blocking layer and part dielectric layer and metallic copper with barrier polishing solution again, realized planarization.
The copper polishing on the one hand will be removed copper unnecessary on the blocking layer as early as possible, will reduce on the other hand the saucerization of copper cash after polishing as far as possible.Before the copper polishing, metal level has the part depression above copper cash.During polishing, the copper on dielectric material (higher) under main body pressure is easy to be removed, and the suffered polish pressure of the copper of recess is lower than main body pressure, and it is little that copper is removed speed.Along with the carrying out of polishing, the difference of altitude of copper can reduce gradually, reaches planarization.But in polishing process, if the chemical action of copper polishing fluid is too strong, static etch rate is too high, and (as the copper cash recess) also is easy to be removed even the passive film of copper is under lower pressure, cause planarization efficiency to reduce, the saucerization after polishing increases.
Development along with unicircuit, on the one hand, in traditional IC industry, in order to improve integrated level, reduce energy consumption, shorten time of lag, live width is more and more narrow, and dielectric layer uses lower low dielectric (low-k) material of physical strength, and the number of plies of wiring is also more and more, for performance and the stability that guarantees unicircuit, also more and more higher to the requirement of copper CMP.Requirement is in the situation that guarantee that the removal speed of copper reduces polish pressure, improves the planarization of copper line surface, the control surface defective.On the other hand, due to physical limitation, live width can not infinitely be dwindled, and semicon industry relies on no longer merely that on one chip, integrated more device improves performance, and turns on multi-chip package.Silicon through hole (TSV) technology, realizes the state-of-the-art technology that interconnects between chip and obtains the extensive approval of industry member by between chip and chip, make vertical conducting between wafer and wafer as a kind of.TSV can make chip maximum in the stacking density of three-dimensional, and physical dimension is minimum, greatly improves the performance of chip speed and reduce power consumption.Present TSV technique is in conjunction with the copper perforation of traditional IC technique formation through-silicon substrate, namely fills copper and realize conducting in the TSV opening, and after filling, unnecessary copper also needs to utilize the chemically machinery polished removal to reach planarization.Different from traditional IC industry, because the silicon through hole is very dark, filling the unnecessary copper in rear surface has a few to tens of micron thickness usually.In order to remove fast these unnecessary copper.Usually need to have very high copper and remove speed, the surface finish after polishing simultaneously is good.For copper is better used in semiconductor technology, people constantly attempt the improvement of new polishing fluid.
Chinese patent CN1256765C provides a kind of polishing fluid that contains the chelating organic acid buffer system of citric acid, Tripotassium Citrate composition.CN1195896C adopts and contains oxygenant, carboxylate salt such as ammonium citrate, abrasive water, a kind of optional triazole or the polishing fluid of triazole derivative.CN1459480A provides a kind of chemical mechanical polishing liquid of copper, and it has comprised membrane-forming agent and film coalescence aid: membrane-forming agent mixes by highly basic and acetic acid the buffered soln that forms and consists of, and film coalescence aid is saltpetre (sodium) salt.US Patent No. 552742 provides a kind of chemical mechanical polishing of metals slurry, comprises a kind of tensio-active agent that contains aramid fiber silica, alkane polysiloxane, polyoxyalkylene ether and multipolymer thereof.The copper chemical mechanical polishing method that US6821897B2 provides a kind of employing to contain the rumbling compound of polymeric complexing agents, it adopts the polymkeric substance that contains negative charge, comprising thiosulfonic acid and salt thereof, vitriol, phosphoric acid, phosphoric acid salt, phosphoric acid ester etc.And US5527423 chemical mechanical polishing of metals slurry comprises a kind of tensio-active agent: aramid fiber siloxanes, polysiloxane, polyoxyalkylene ether and multipolymer thereof.
Technology in above-mentioned patent is all made every effort in the polishing process of copper, reduces spot corrosion and the burn into control static etch rate of copper layer part, thereby can remove better the copper layer, and the polishing speed that improves copper also obtains good copper-connection planarity.Above-mentioned patent has overcome the problem that above-mentioned copper runs into to a certain extent in polishing process, but effect and not obvious, has defective on the copper surface after using, and planeness is low, and after polishing copper cash saucerization to occur large and cross the throwing window narrows; Perhaps polishing speed is not high enough, can not be applied to removing the higher technique of rate requirement.
Summary of the invention
The invention provides a kind of chemical mechanical polishing of metals slurry, added the tensio-active agent take phosphoric acid ester as main component in described polishing slurries, thereby lowered the static corrosion of copper, in the polishing speed of the higher copper of maintenance, improve the planarization of the glazed surface of copper, strengthen polishing effect.
Chemical mechanical polishing of metals slurry of the present invention is achieved through the following technical solutions its purpose:
A kind of chemical mechanical polishing of metals slurry comprises abrasive grains, complexing agent, corrosion inhibitor, oxygenant, wherein, also contains at least a kind of phosphoric acid ester tensio-active agent; Described phosphoric acid ester tensio-active agent contains at least a following structure:
X=RO wherein, RO-(CH
2CH
2O)
n, RCOO-(CH
2CH
2O)
nR is the alkyl of C8～C22 or alkylbenzene, glyceryl (C
3H
5O
3-) etc.; N=2～30, M=H, K, NH
4, (CH
2CH
2O)
1～3NH
3～1And/or Na.
Wherein working as R is C
8～C
22Alkyl the time, tensio-active agent is polyoxyethylene ether phosphate or its salt, as alkylpolyoxyethylene phosphoric acid ester, alkylpolyoxyethylene phosphate kalium salt, octadecyl polyoxyethylene ether phosphate, octadecyl polyoxyethylene ether phosphate sylvite etc.When R was alkylbenzene, tensio-active agent was alkylphenol-polyethenoxy alkyl ether phosphate or its salt, comprised, polyoxyethylene nonylphenol ether phosphoric acid ester, octadecyl phenol polyethenoxy alkyl ether phosphate sodium salt etc.Experimental results show that, can effectively control the static etch rate of copper at the chemical rightenning slurry that is formed by compositions such as above-mentioned tensio-active agent and abrasive grains, complexing agent, corrosion inhibitor, oxygenants, alleviate the local corrosion of copper, in the removal speed of the higher copper of maintenance, improve the saucerization of copper cash after polishing and cross the throwing window, obtaining the glazed surface of more smooth copper.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, the content of described phosphoric acid ester tensio-active agent is weight percentage 0.0005～1%, is preferably weight percent 0.001～0.5%.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, described abrasive grains is one or more in silicon-dioxide, cerium dioxide, titanium dioxide and the polymer abrasive grains of silicon-dioxide, aluminum oxide, adulterated al or aluminium coating.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, the particle diameter of described abrasive grains is 20～200nm.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, the content of described abrasive grains is weight percentage 0.1～20%, is preferably weight percent 0.1～10%.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, described complexing agent is one or more in ammonia carboxylation compound and salt, organic carboxyl acid and salt thereof, organic phospho acid and salt thereof and organic amine.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, described ammonia carboxylation compound is selected from one or more in glycine, L-Ala, α-amino-isovaleric acid, leucine, proline(Pro), phenylalanine, tyrosine, tryptophane, Methionin, arginine, Histidine, Serine, aspartic acid, Threonine, L-glutamic acid, l-asparagine, glutamine, nitrilotriacetic acid(NTA), ethylenediamine tetraacetic acid (EDTA), hexanaphthene tetraacethyl, ethylenediamine disuccinic acid, diethylene triamine pentacetic acid (DTPA) and triethylenetetramine hexaacetic acid; Described organic carboxyl acid is one or more in acetic acid, oxalic acid, citric acid, tartrate, propanedioic acid, succinic acid, oxysuccinic acid, lactic acid, gallic acid and sulphosalicylic acid; Described organic phospho acid is 2-phosphonic acids butane-1, one or more in 2,4-tricarboxylic acid, Amino Trimethylene Phosphonic Acid, 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylene diamine tetra methylene phosphonic acid, diethylene triamine pentamethylene phosphonic, 2-hydroxyethylidene diphosphonic acid guanidine-acetic acid, ethylene diamine tetra methylene phosphonic acid and polyamino polyether base methylenephosphonic acid; Described organic amine is quadrol, diethylenetriamine, pentamethyl-diethylenetriamine, polyethylene polyamine, triethylene tetramine, tetraethylene pentamine; Described salt is sylvite, sodium salt and/or ammonium salt.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, the content of described complexing agent is weight percentage 0.05～10%.Be preferably weight percent 0.1～5%
Above-mentioned chemical mechanical polishing of metals slurry, wherein, described oxygenant is one or more in hydrogen peroxide, urea peroxide, peroxyformic acid, Peracetic Acid, persulphate, percarbonate, Periodic acid, perchloric acid, high boric acid, potassium permanganate and iron nitrate.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, the content of described oxygenant is weight percentage 0.05～10%.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, described corrosion inhibitor is one or more in nitrogen azoles, imidazoles, thiazole, pyridine and pyrimidines.
above-mentioned chemical mechanical polishing of metals slurry, wherein, the nitrogen azole compounds comprises: benzotriazole, the 5-methyl isophthalic acid, 2, the 3-benzotriazole, the 5-carboxy benzotriazole, 1-hydroxyl-benzotriazole, 1, 2, the 4-triazole, 3-amino-1, 2, the 4-triazole, 4-amino-1, 2, the 4-triazole, 3, the 5-diaminostilbene, 2, the 4-triazole, 5-carboxyl-3-amino-1, 2, the 4-triazole, 3-amino-5-sulfydryl-1, 2, the 4-triazole, 5-acetic acid-1H-tetrazole, the 5-methyl tetrazole, 5-amino-1H-tetrazole and 1-phenyl-5-sulfydryl-tetrazole.Described glyoxaline compound comprises benzoglyoxaline and 2-mercaptobenzimidazole.Described thiazole compound comprises 2-sulfydryl-benzothiazole, 2-dimercaptothiodiazole and 5-amino-2-mercapto phenyl formic-1,3,4-thiadiazoles; Described pyridine comprises 2,3 diamino pyridine, PA and 2-pyridine carboxylic acid.Described pyrimidine is the 2-aminopyrimidine.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, the content of described corrosion inhibitor is weight percentage 0.001～2%, is preferably weight percent 0.005～1%.
Above-mentioned chemical mechanical polishing of metals slurry, wherein, pH is 3～11, is preferably 3～9.
Above-mentioned chemical mechanical polishing of metals slurry wherein, also comprises pH adjusting agent, viscosity modifier, defoamer, the additive of this area routines such as sterilant.
Above-mentioned chemical mechanical polishing of metals slurry can prepare concentrating sample, is diluted to concentration range of the present invention with deionized water before using and gets final product.
The application of polishing slurries of the present invention in the chemically machinery polished of the base material that contains copper.Adopt its advantage of chemical mechanical polishing of metals slurry of the present invention to be:
1. chemical mechanical polishing of metals slurry of the present invention has higher copper removal speed, can effectively control the static corrosion of copper simultaneously, the copper surface nothing corrosion after polishing.
2. chemical mechanical polishing of metals slurry of the present invention has strengthened the polishing effect of copper, improves the saucerization of copper cash after polishing and crosses the throwing window.
Description of drawings
Fig. 1 is the copper wafer surface electron scanning micrograph after employing polishing slurries polishing of the present invention;
Fig. 2 is for adopting the copper wafer surface electron scanning micrograph after polishing slurries polishing of the present invention is also soaked.
Embodiment
Further set forth the present invention below by embodiment.
Embodiment 1～47
Table 1 has provided the embodiment 1～47 of chemical mechanical polishing liquid of the present invention, by the formula of giving in table, all components is mixed, and water is supplied mass percent to 100%.With KOH or HNO
3Be adjusted to needed pH value.
Table 1 embodiment 1～47
Effect embodiment
Table 2 has provided embodiment 48～67 and the comparative example 1～5 of chemical mechanical polishing liquid of the present invention, by the formula of giving in table, all components is mixed, and water is supplied mass percent to 100%.With KOH or HNO
3Be adjusted to needed pH value.
Table 2, comparative example 1～5 and embodiment 48～67
Adopt contrast polishing fluid 1～3 and polishing fluid of the present invention 48～63, to empty sheet copper (Cu) wafer with there is the copper wafer of figure to carry out polishing.The polishing speed of the copper of gained sees Table 3, and the dish-like depression value of the polishing condition of graphical wafer and copper billet sees Table 4.
Empty sheet copper wafer polishing condition: overdraft 1～3psi; Polishing disk and rubbing head rotating speed 93/87rpm, polishing pad IC1010, polishing pad correction wheel is 3M A165, polishing fluid flow velocity 150ml/min, polishing machine platform are 8 " Mirra.
Figuratum copper wafer polishing processing condition: polishing disk and rubbing head rotating speed 93/87rpm, polishing pad IC1010, polishing pad correction wheel is 3M A165, polishing fluid flow velocity 150ml/min, polishing machine platform are 8 " Mirra.On polishing disk 1 with the figuratum copper wafer of corresponding overdraft polishing to about 3000 dusts of remaining copper, and then with corresponding overdraft, residual copper is removed and is crossed on polishing disk 2 and throw 20 seconds.Measure the dish-like depression value of the copper billet of 80um*80um on figuratum copper wafer with the XE-300P atomic force microscope.
Graphical wafer after polishing was soaked in polishing fluid 30 minutes, and copper line surface situation before and after soaking with sem observation is seen attached Fig. 1 and 2.
Copper under the different polish pressures of table 3, polishing fluid is removed speed
The saucerization value at 80um*80um copper billet place after the polishing condition of the figuratum copper wafer of table 4 and polishing
Can learn from form 3: compare with the contrast polishing fluid, chemical mechanical polishing of metals slurry of the present invention can effectively reduce the removal speed of copper under low overdraft, and little on the impact of the removal speed under higher overdraft.This specific character can make polishing fluid still can obtain more smooth glazed surface under the higher removal speed of maintenance, has greatly improved production efficiency, has reduced again the saucerization value of the copper billet after the polishing, obtains more smooth glazed surface.Under the condition that the removal speed with contrast polishing fluid 2 approaches, also can obtain lower saucerization value.(seeing Table 4)
See accompanying drawing 1～2 with the SEM figure that soaks the graphical wafer of 30 minutes after embodiment 55 polishings and after polishing in polishing fluid, as seen from the figure, with the wafer surface after this polishing fluid polishing without corrosion, zero defect.Soaked 30 minutes in polishing fluid, copper cash illustrates that still without obviously corroding and defective polishing fluid of the present invention has the ability of very strong control corrosion.
Adopt contrast polishing fluid 5 and polishing fluid of the present invention 64～67, to empty sheet copper (Cu) wafer, empty sheet silica wafers and have the copper wafer of figure to carry out polishing.The dish-like depression value of the polishing speed of gained and copper billet sees Table 5.
Empty sheet polishing condition: overdraft 1～3psi; Polishing disk and rubbing head rotating speed 93/87rpm, polishing pad IC1010, polishing pad correction wheel is 3M A165, polishing fluid flow velocity 150ml/min, polishing machine platform are 8 " Mirra.
Figuratum copper wafer polishing processing condition: polishing disk and rubbing head rotating speed 93/87rpm, polishing pad IC1010, polishing pad correction wheel is 3M A165, polishing fluid flow velocity 150ml/min, polishing machine platform are 8 " Mirra.On polishing disk 1 with the figuratum copper wafer of overdraft polishing of 3psi to the about 5000A of remaining copper, and then copper removal that will be residual with the overdraft of 2psi on polishing disk 2.Measure the dish-like depression value at the copper cash place of 10um/10um (copper cash/silicon-dioxide) on figuratum copper wafer with the XE-300P atomic force microscope.
The empty sheet of table 5, polishing fluid is removed speed and the polishing condition of figuratum copper wafer and the saucerization value after polishing
Can learn from form 5: compare with contrast polishing fluid 5, chemical mechanical polishing of metals slurry 64～66 of the present invention can still can obtain more smooth glazed surface under the very high removal speed of maintenance, by embodiment 67 as seen, this polishing fluid also can provide the removal speed of higher silicon-dioxide when keeping higher copper to remove speed.This polishing fluid can satisfy different application demands.
Claims (19)
1. a chemical mechanical polishing of metals slurry, comprise abrasive grains, complexing agent, corrosion inhibitor, oxygenant, it is characterized in that, also contains at least a kind of phosphoric acid ester tensio-active agent.
2. chemical mechanical polishing of metals slurry as claimed in claim 1, is characterized in that, described phosphoric acid ester tensio-active agent contains a kind of following structural formula at least:
3. chemical mechanical polishing of metals slurry as claimed in claim 1, is characterized in that, the content of described phosphoric acid ester tensio-active agent is weight percentage 0.0005～1%.
4. chemical mechanical polishing of metals slurry as claimed in claim 3, is characterized in that, the content of described phosphoric acid ester tensio-active agent is weight percentage 0.001～0.5%.
5. chemical mechanical polishing of metals slurry as claimed in claim 1, it is characterized in that, described abrasive grains is one or more in silicon-dioxide, cerium dioxide, titanium dioxide and the polymer abrasive grains of silicon-dioxide, aluminum oxide, adulterated al or aluminium coating.
6. chemical mechanical polishing of metals slurry as claimed in claim 1, is characterized in that, the particle diameter of described abrasive grains is 20～200nm.
7. chemical mechanical polishing of metals slurry as claimed in claim 1, is characterized in that, the content of described abrasive grains is weight percentage 0.1～20%.
8. chemical mechanical polishing of metals slurry as claimed in claim 7, is characterized in that, the content of described abrasive grains is weight percentage 0.1～10%.
9. chemical mechanical polishing of metals slurry as claimed in claim 1, is characterized in that, described complexing agent is one or more in ammonia carboxylation compound and salt, organic carboxyl acid and salt thereof, organic phospho acid and salt thereof and organic amine.
10. metallochemistry polishing slurries as claimed in claim 9, it is characterized in that, described ammonia carboxylation compound is selected from one or more in glycine, L-Ala, α-amino-isovaleric acid, leucine, proline(Pro), phenylalanine, tyrosine, tryptophane, Methionin, arginine, Histidine, Serine, aspartic acid, Threonine, L-glutamic acid, l-asparagine, glutamine, nitrilotriacetic acid(NTA), ethylenediamine tetraacetic acid (EDTA), hexanaphthene tetraacethyl, ethylenediamine disuccinic acid, diethylene triamine pentacetic acid (DTPA) and triethylenetetramine hexaacetic acid; Described organic carboxyl acid is one or more in acetic acid, oxalic acid, citric acid, tartrate, propanedioic acid, succinic acid, oxysuccinic acid, lactic acid, gallic acid and sulphosalicylic acid; Described organic phospho acid is 2-phosphonic acids butane-1, one or more in 2,4-tricarboxylic acid, Amino Trimethylene Phosphonic Acid, 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylene diamine tetra methylene phosphonic acid, diethylene triamine pentamethylene phosphonic, 2-hydroxyethylidene diphosphonic acid guanidine-acetic acid, ethylene diamine tetra methylene phosphonic acid and polyamino polyether base methylenephosphonic acid; Described organic amine is quadrol, diethylenetriamine, pentamethyl-diethylenetriamine, polyethylene polyamine, triethylene tetramine, tetraethylene pentamine; Described salt is sylvite, sodium salt and/or ammonium salt.
11. chemical mechanical polishing of metals slurry as claimed in claim 1 is characterized in that the content of described complexing agent is weight percentage 0.05～10%.
12. chemical mechanical polishing of metals slurry as claimed in claim 11 is characterized in that the content of described complexing agent is preferably weight percent 0.1～5%.
13. chemical mechanical polishing of metals slurry as claimed in claim 1, it is characterized in that, described oxygenant is one or more in hydrogen peroxide, urea peroxide, peroxyformic acid, Peracetic Acid, persulphate, percarbonate, Periodic acid, perchloric acid, high boric acid, potassium permanganate and iron nitrate.
14. chemical mechanical polishing of metals slurry as claimed in claim 1 is characterized in that the content of described oxygenant is weight percentage 0.05～10%.
15. chemical mechanical polishing of metals slurry as claimed in claim 1 is characterized in that, described corrosion inhibitor is one or more in nitrogen azoles, imidazoles, thiazole, pyridine and pyrimidines.
16. chemical mechanical polishing of metals slurry as claimed in claim 15, it is characterized in that, described nitrogen azole compounds is selected from benzotriazole, the 5-methyl isophthalic acid, 2, the 3-benzotriazole, the 5-carboxy benzotriazole, 1-hydroxyl-benzotriazole, 1, 2, the 4-triazole, 3-amino-1, 2, the 4-triazole, 4-amino-1, 2, the 4-triazole, 3, the 5-diaminostilbene, 2, the 4-triazole, 5-carboxyl-3-amino-1, 2, the 4-triazole, 3-amino-5-sulfydryl-1, 2, the 4-triazole, 5-acetic acid-1H-tetrazole, the 5-methyl tetrazole, 5-amino-1H-tetrazole and 1-phenyl-5-sulfydryl-tetrazole.Described glyoxaline compound comprises benzoglyoxaline and 2-mercaptobenzimidazole.Described thiazole compound comprises 2-sulfydryl-benzothiazole, 2-dimercaptothiodiazole and 5-amino-2-mercapto phenyl formic-1,3,4-thiadiazoles; Described pyridine is selected from one or more in following: 2,3 diamino pyridine, PA and 2-pyridine carboxylic acid.Described pyrimidine is the 2-aminopyrimidine.
17. chemical mechanical polishing of metals slurry as claimed in claim 1 is characterized in that the content of described corrosion inhibitor is weight percentage 0.001～2%.
18. chemical mechanical polishing of metals slurry as claimed in claim 17 is characterized in that the content of described corrosion inhibitor is weight percentage 0.005～1%.
19. the application of a polishing slurries as described in any one in claim 1～18 in the chemically machinery polished of the base material that contains copper.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110424891XA CN103160207A (en) | 2011-12-16 | 2011-12-16 | Metal chemico-mechanical polishing sizing agent and application thereof |
| PCT/CN2012/001017 WO2013086775A1 (en) | 2011-12-16 | 2012-07-30 | Chemical mechanical polishing slurry for metal and application thereof |
| TW101147063A TWI580766B (en) | 2011-12-16 | 2012-12-13 | Metal Chemical Mechanical Polishing Slurry and Its Application |
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| CN201110424891XA CN103160207A (en) | 2011-12-16 | 2011-12-16 | Metal chemico-mechanical polishing sizing agent and application thereof |
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| KR20230061567A (en) * | 2016-12-30 | 2023-05-08 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | Polishing compositions |
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| WO2017169743A1 (en) * | 2016-03-28 | 2017-10-05 | 株式会社フジミインコーポレーテッド | Polishing composition used for polishing of polishing object having layer that contains metal |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI580766B (en) | 2017-05-01 |
| TW201326378A (en) | 2013-07-01 |
| WO2013086775A1 (en) | 2013-06-20 |
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