WO2015096630A1 - Chemical mechanical polishing liquid for polishing cobalt barrier layer - Google Patents
Chemical mechanical polishing liquid for polishing cobalt barrier layer Download PDFInfo
- Publication number
- WO2015096630A1 WO2015096630A1 PCT/CN2014/093682 CN2014093682W WO2015096630A1 WO 2015096630 A1 WO2015096630 A1 WO 2015096630A1 CN 2014093682 W CN2014093682 W CN 2014093682W WO 2015096630 A1 WO2015096630 A1 WO 2015096630A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- acid
- polishing liquid
- chemical mechanical
- mechanical polishing
- liquid according
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Definitions
- the present invention relates to a chemical mechanical polishing liquid, and more particularly to a chemical mechanical polishing liquid for a cobalt barrier layer.
- Integrated circuits typically include millions of activated electronic components. These activating electronic components are mounted in a silicon substrate by a multi-layer metallized interconnect layer connector that is interconnected by metallized vias and contacts to form a complete functional circuit and component. Copper is widely used as a metal wire because of its good electrical conductivity, but copper has a rapid migration property and easily diffuses through the dielectric layer to cause leakage between adjacent metal lines, resulting in deterioration of device characteristics and may not be able to function. effect. Therefore, a diffusion barrier layer is typically applied to the substrate prior to deposition of copper. Tantalum and tantalum nitride have been widely accepted as barrier materials in the industry.
- the grain boundary and surface scattering effects will increase the resistance, which is likely to mean the traditional TaN/Ta.
- the /Cu structure will not continue.
- the TaN barrier layer can be scaled down to about 8 nm.
- TaN deposited by ALD does not form a good bond with copper.
- Metallic cobalt is a good binder, but because it does not inhibit the diffusion of copper, a barrier layer of TaN or TiN is also required.
- the industry has begun to develop an interconnect structure with Co as a barrier material.
- the copper interconnection can only be fabricated by a damascene process, that is, a trench is formed in the first layer, a copper barrier layer and copper are filled in the trench, and a metal wire is formed and overlaid on the dielectric layer. The excess copper/copper barrier on the dielectric layer is then removed by chemical mechanical polishing leaving a single interconnect in the trench.
- CMP chemical mechanical polishing
- Chemical mechanical polishing system is a chemical mechanical planarization technology that integrates cleaning, drying, on-line detection, and end point detection. It is an integrated circuit. It is an indispensable technology for miniaturization, multi-layering, flattening, and thinning, and integrated circuits to improve production efficiency, reduce cost, and flatten wafers globally.
- the CMP process uses an abrasive-containing mixture and a polishing pad to polish the wafer surface.
- the substrate is brought into direct contact with a rotating polishing pad to apply pressure on the back side of the substrate.
- the gasket and the table rotate while maintaining a downward force on the back of the substrate, applying abrasive and chemically active solutions (often referred to as polishing fluids or polishing slurries) to the gasket.
- the polished wafer film undergoes a chemical reaction to begin the polishing process.
- the chemical mechanical polishing process is generally divided into three steps. The first step is to remove a large amount of copper on the surface of the substrate with a high and low removal rate with a high downforce.
- Step 2 The pressure is lowered when the barrier layer is approaching, the remaining metal copper is polished at a lower removal rate and stopped at the barrier layer, and the barrier layer and a portion of the dielectric layer and the metal copper are removed by a barrier polishing solution to achieve planarization.
- the selection of the slurry composition is an important step in the CMP step.
- the active component of the polishing slurry reacts with the substrate to be polished to change the polishing effect.
- the selection of a suitable polishing slurry not only accelerates the polishing rate of the substrate, but also effectively improves the surface flatness of the substrate, so that the integrated circuit has better operational performance. Therefore, different polishing pastes are required for different substrates to enhance the polishing effect of the substrate.
- the purpose of planarization of the barrier layer is to remove the barrier metal and dielectric material from the surface of the wafer and to control the thickness of the metal copper and the interlayer dielectric to the extent required by the process to form an interconnect. Since the novel barrier material cobalt is prone to corrosion under acidic conditions, it is necessary to develop a barrier polishing liquid compatible with cobalt materials.
- This patent is intended to provide a polishing fluid suitable for a cobalt barrier layer having a high removal rate of silicon dioxide, cobalt and tantalum nitride, and an adjustable copper rate. Moreover, corrosion of metallic cobalt and copper does not occur.
- CN1400266 discloses an alkaline barrier polishing liquid comprising a silica abrasive, an amine compound and a nonionic surfactant, however, the amine-containing alkaline polishing liquid therein is susceptible to corrosion of copper.
- CN101372089A discloses an alkaline barrier polishing fluid comprising a silica abrasive, a corrosion inhibitor, an oxidizing agent, a nonionic fluorosurfactant, an aromatic sulfonic acid oxidizing agent compound. However, the polishing layer of the polishing liquid has a lower polishing rate and a lower yield.
- CN101012356A discloses an acidic barrier polishing fluid comprising an oxidizing agent, silica particles partially covered with aluminum, an inhibitor and a complexing agent, but the acidic polishing liquid does not in fact involve polishing of cobalt.
- the present invention provides a chemical mechanical polishing fluid suitable for polishing a cobalt barrier layer comprising at least one abrasive particle, an azole compound, a complexing agent, a polyalkoxide, and an oxidizing agent.
- the abrasive particles may be abrasive particles commonly used in the art, such as silica, alumina, cerium oxide, aluminum-doped silica, and/or polymer particles; and the mass percentage of the abrasive particles is preferably 1 to 20%, more preferably 3 to 10%; the particle diameter of the abrasive particles is preferably from 20 to 200 nm, more preferably from 20 to 120 nm.
- the azole compound is preferably selected from one or more of the group consisting of benzotriazole, methylbenzotriazole, 1,2,4-triazole, 3-amino-1,2 , 4-triazole, 4-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 1-hydroxy-benzotriazole, 5- Carboxy-3-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, 5-carboxy-benzotriazole, 5-phenyltetrazole Oxazole, 1-phenyl-5-mercapto-tetrazole, 5-acetic acid-1H-tetrazole, 5-methyl-tetrazole and 5-amino-tetrazole.
- the mass percentage concentration of the azole compound is preferably from 0.005 to 2%, more preferably from 0.01 to 1%.
- the complexing agent is one or more of an organic acid, an organic phosphoric acid and an aminocarboxylic acid compound.
- Preferred is one or more selected from the group consisting of acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, citric acid, tartaric acid, malic acid, 2-phosphonic acid butane-1, 2, 4- Tricarboxylic acid, aminotrimethylenephosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylenephosphonic acid, diethylenetriamine penta methylene phosphonic acid, 2-hydroxyphosphonic acid acetic acid, and more Amino polyether methylene phosphonic acid, ethylenediaminetetraacetic acid, cyclohexanetetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid and triethylenetetraamine hexaacetic acid, iminodiacetic acid, ammonia tris Acetic acid,
- the polyalkoxide is one or more of DISPERBYK-2090, DISPERBYK-2091.
- the concentration of the polyalkoxide is 0.005 to 1%, more preferably 0.01 to 0.5%.
- the oxidizing agent is preferably selected from one or more of the group consisting of hydrogen peroxide, peracetic acid, potassium persulfate and/or ammonium persulfate.
- the mass percentage of the oxidizing agent is preferably from 0.01 to 5%, more preferably from 0.1 to 2%.
- the chemical mechanical polishing liquid described therein has a pH of from 2.0 to 7.0, preferably from 3.0 to 5.0.
- the chemical mechanical polishing liquid of the present invention may further contain other additives in the field such as a pH adjuster, a viscosity modifier, an antifoaming agent and a bactericide to achieve a polishing effect.
- the chemical mechanical polishing liquid of the present invention can be prepared by uniformly mixing the components other than the oxidizing agent, adjusting the pH to a desired pH with a pH adjusting agent (such as KOH or HNO3), and adding an oxidizing agent before use. Mix well.
- a pH adjusting agent such as KOH or HNO3
- the polishing liquid of the present invention can prepare a concentrated sample which is diluted with deionized water to the concentration range of the present invention and added with an oxidizing agent before use.
- the reagents and starting materials used in the present invention are commercially available.
- the polishing liquid of the present invention has a high removal rate of cobalt, cerium and silicon dioxide, and the removal rate of metallic copper is adjustable.
- the polishing liquid of the present invention has a strong ability to control corrosion of metallic cobalt.
- Table 1 shows the formulation of the comparative polishing liquid and the polishing liquid of the present invention. According to the formula in the table, the components other than the oxidizing agent are simply and uniformly mixed, and the balance is water, and then adjusted to potassium hydroxide, ammonia water and nitric acid to The slurry of each example can be prepared by using a suitable pH value, and the oxidizing agent can be added before use, and the mixture can be uniformly mixed.
- polishing liquid Using a comparative polishing liquid and the polishing liquid of the present invention, copper (Cu, thickness: 15,000 angstroms), tantalum (Ta, thickness: 2,500 angstroms), silicon dioxide (TEOS, thickness: 15,000 angstroms), and cobalt (Co) were used under the following conditions.
- the polishing results are shown in Table 2.
- the cobalt wafer was vertically inserted into the comparative polishing liquid 1 and the polishing liquid 2, and the lower half 2 was immersed in the polishing liquid, and the upper half 1 was exposed outside the polishing liquid to investigate the influence of the polishing liquid on the wafer.
- the surface morphology of the wafer after being immersed was investigated using an optical microscope.
- the surface optical micrograph of the cobalt wafer after immersion in the comparative polishing liquid 1 is as shown in Fig.
- the corrosion rate of cobalt was effectively inhibited by adding a certain amount of polyalkoxides DISPERBYK-2090 and DISPERBYK-2091 in the examples compared with the comparative examples. Very good protection, showing good corrosion resistance.
- the removal rate of cobalt is slightly decreased after the addition of the polyalkoxide, the removal rate is maintained, and the removal rates of silica, cerium and copper of the polishing liquid of the present invention can be carried out by the content of each component. Adjustment, can meet the requirements of different processes.
- wt% of the present invention refers to the mass percentage.
Abstract
The present invention relates to a chemical mechanical polishing liquid for polishing a cobalt barrier layer, the chemical mechanical polishing liquid containing abrasive particles, an azole compound, a complexing agent, a polyalkoxide and an oxidizing agent. The polishing liquid of the present invention has a relatively strong capacity for controlling metal cobalt corrosion.
Description
本发明涉及一种化学机械抛光液，尤其涉及一种用于钴阻挡层的化学机械抛光液。The present invention relates to a chemical mechanical polishing liquid, and more particularly to a chemical mechanical polishing liquid for a cobalt barrier layer.
集成电路一般包括数百万个活化电子元件。这些活化电子元件通过多层金属化的互连层连接件安装在硅基材中，这些原本互相分离的活化电子元件通过金属化的通路和触点连接，从而形成完整的功能电路和部件。铜由于其具有良好的导电性而被广泛用作金属导线，但是铜具有快速迁移的特性，容易扩散穿过介电层而导致相邻金属线之间漏电，从而导致器件特性退化并且可能不能发挥作用。因此，通常在铜的沉积之前将扩散阻挡层施加到基材上。工业上已广泛接受钽及氮化钽作为阻挡层材料使用。但是随着集成电路工业的发展，特别是到了在32nm及以下技术节点，随着横截面积的缩小，晶界和表面散射效应都将使电阻升高，这很可能意味着传统的TaN/Ta/Cu结构将无法继续延续。采用电离物理气相沉积(PVD)工艺，TaN阻挡层可以等比例缩小到约8nm。采用ALD沉积的TaN无法与铜形成良好的粘结。金属钴是良好的粘结材料，但是由于其无法抑制铜的扩散，因此还需要TaN或TiN的阻挡层。目前，业界已经开始开发以Co为阻挡层材料的互连结构。Integrated circuits typically include millions of activated electronic components. These activating electronic components are mounted in a silicon substrate by a multi-layer metallized interconnect layer connector that is interconnected by metallized vias and contacts to form a complete functional circuit and component. Copper is widely used as a metal wire because of its good electrical conductivity, but copper has a rapid migration property and easily diffuses through the dielectric layer to cause leakage between adjacent metal lines, resulting in deterioration of device characteristics and may not be able to function. effect. Therefore, a diffusion barrier layer is typically applied to the substrate prior to deposition of copper. Tantalum and tantalum nitride have been widely accepted as barrier materials in the industry. However, with the development of the integrated circuit industry, especially at the technical nodes of 32 nm and below, as the cross-sectional area shrinks, the grain boundary and surface scattering effects will increase the resistance, which is likely to mean the traditional TaN/Ta. The /Cu structure will not continue. Using an ionization physical vapor deposition (PVD) process, the TaN barrier layer can be scaled down to about 8 nm. TaN deposited by ALD does not form a good bond with copper. Metallic cobalt is a good binder, but because it does not inhibit the diffusion of copper, a barrier layer of TaN or TiN is also required. At present, the industry has begun to develop an interconnect structure with Co as a barrier material.
铜的互连只能以镶嵌工艺制造，即：在第一层里形成沟槽，在沟槽内填充铜阻挡层和铜，形成金属导线并覆盖在介电层上。然后通过化学机械抛光将介电层上多余的铜/铜阻挡层除去，在沟槽里留下单个互连线。The copper interconnection can only be fabricated by a damascene process, that is, a trench is formed in the first layer, a copper barrier layer and copper are filled in the trench, and a metal wire is formed and overlaid on the dielectric layer. The excess copper/copper barrier on the dielectric layer is then removed by chemical mechanical polishing leaving a single interconnect in the trench.
在整个半导体基材的抛光工艺中，平坦化技术已成为与光刻和刻蚀同等重要、且相互依赖的不可缺少的关键技术之一。而化学机械抛光(CMP)工艺便是目前最有效、最成熟的平坦化技术。化学机械抛光系统是集清洗、干燥、在线检测、终点检测等技术于一体的化学机械平坦化技术，是集成电路
向微细化、多层化、平坦化、薄型化发展，和集成电路提高生产效率、降低成本、晶圆全局平坦化的必备技术。CMP工艺就是使用一种含磨料的混合物和抛光垫抛光晶圆表面。在典型的化学机械抛光方法中，将衬底直接与旋转抛光垫接触，在衬底背面施加压力。在抛光期间，垫片和操作台旋转，同时在衬底背面保持向下的力，将磨料和化学活性溶液(通常称为抛光液或抛光浆料)涂于垫片上，该抛光液与正在抛光的晶圆薄膜发生化学反应开始进行抛光过程。在铜互连工艺过程中，化学机械抛光过程一般分为3个步骤，第1步是先用较高的下压力，以快且高效的去除速率除去衬底表面上大量的铜，第2步是在快要接近阻挡层时降低下压力，降低去除速率抛光剩余的金属铜并停在阻挡层，第3步再用阻挡层抛光液去除阻挡层及部分介电层和金属铜，实现平坦化。In the polishing process of the entire semiconductor substrate, planarization technology has become one of the indispensable key technologies that are as important and interdependent as lithography and etching. The chemical mechanical polishing (CMP) process is currently the most effective and mature planarization technology. Chemical mechanical polishing system is a chemical mechanical planarization technology that integrates cleaning, drying, on-line detection, and end point detection. It is an integrated circuit.
It is an indispensable technology for miniaturization, multi-layering, flattening, and thinning, and integrated circuits to improve production efficiency, reduce cost, and flatten wafers globally. The CMP process uses an abrasive-containing mixture and a polishing pad to polish the wafer surface. In a typical chemical mechanical polishing process, the substrate is brought into direct contact with a rotating polishing pad to apply pressure on the back side of the substrate. During polishing, the gasket and the table rotate while maintaining a downward force on the back of the substrate, applying abrasive and chemically active solutions (often referred to as polishing fluids or polishing slurries) to the gasket. The polished wafer film undergoes a chemical reaction to begin the polishing process. In the copper interconnect process, the chemical mechanical polishing process is generally divided into three steps. The first step is to remove a large amount of copper on the surface of the substrate with a high and low removal rate with a high downforce. Step 2 The pressure is lowered when the barrier layer is approaching, the remaining metal copper is polished at a lower removal rate and stopped at the barrier layer, and the barrier layer and a portion of the dielectric layer and the metal copper are removed by a barrier polishing solution to achieve planarization.
在化学机械抛光工艺中，浆料组合物的选择则是CMP步骤中一个重要步骤，使用时，抛光物浆料的有效成分会与被抛光基材发生反应，从而改变抛光效果。选用合适的抛光浆料，不仅可以加速基材的抛光速率，还可有效提高基材表面平整度，使得集成电路拥有更好的运作性能。因而针对不同的基材，需要选用不同的抛光浆料，从而增强基材的抛光效果。In the chemical mechanical polishing process, the selection of the slurry composition is an important step in the CMP step. When used, the active component of the polishing slurry reacts with the substrate to be polished to change the polishing effect. The selection of a suitable polishing slurry not only accelerates the polishing rate of the substrate, but also effectively improves the surface flatness of the substrate, so that the integrated circuit has better operational performance. Therefore, different polishing pastes are required for different substrates to enhance the polishing effect of the substrate.
在铜制程工艺中，阻挡层的平坦化目的是清除晶圆表面的阻挡层金属和介质材料并将金属铜和层间介质的厚度控制在工艺要求的范围，形成互连。由于新型的阻挡层材料钴在酸性条件下容易产生腐蚀，需要开发与钴材料兼容的阻挡层抛光液。本专利旨在提供一种适用于钴阻挡层的抛光液，其具有较高的二氧化硅、钴和氮化钽的去除速率，铜的速率可调。而且不产生金属钴和铜的腐蚀。In the copper process, the purpose of planarization of the barrier layer is to remove the barrier metal and dielectric material from the surface of the wafer and to control the thickness of the metal copper and the interlayer dielectric to the extent required by the process to form an interconnect. Since the novel barrier material cobalt is prone to corrosion under acidic conditions, it is necessary to develop a barrier polishing liquid compatible with cobalt materials. This patent is intended to provide a polishing fluid suitable for a cobalt barrier layer having a high removal rate of silicon dioxide, cobalt and tantalum nitride, and an adjustable copper rate. Moreover, corrosion of metallic cobalt and copper does not occur.
CN1400266公开了一种碱性阻挡层抛光液，该抛光液包含二氧化硅磨料，胺类化合物和非离子表面活性剂，然而其中的含胺类的碱性抛光液易对铜产生腐蚀。CN101372089A公开了一种碱性阻挡层抛光液，该抛光液包含二氧化硅磨料，腐蚀抑制剂，氧化剂，非离子氟表面活性剂，芳族磺酸氧化剂化合物。然而，该抛光液的阻挡层的抛光速率较低，产率较低。
CN101012356A公开了一种酸性阻挡层抛光液，该抛光液包含氧化剂，部分被铝覆盖的二氧化硅颗粒，抑制剂和络合剂，但是该酸性抛光液事实上并不涉及对钴的抛光。CN1400266 discloses an alkaline barrier polishing liquid comprising a silica abrasive, an amine compound and a nonionic surfactant, however, the amine-containing alkaline polishing liquid therein is susceptible to corrosion of copper. CN101372089A discloses an alkaline barrier polishing fluid comprising a silica abrasive, a corrosion inhibitor, an oxidizing agent, a nonionic fluorosurfactant, an aromatic sulfonic acid oxidizing agent compound. However, the polishing layer of the polishing liquid has a lower polishing rate and a lower yield.
CN101012356A discloses an acidic barrier polishing fluid comprising an oxidizing agent, silica particles partially covered with aluminum, an inhibitor and a complexing agent, but the acidic polishing liquid does not in fact involve polishing of cobalt.
发明概要Summary of invention
本发明提供了一种适用于钴阻挡层抛光的化学机械抛光液，该抛光液包含至少一种研磨颗粒、唑类化合物、络合剂、聚烷氧化物和氧化剂。The present invention provides a chemical mechanical polishing fluid suitable for polishing a cobalt barrier layer comprising at least one abrasive particle, an azole compound, a complexing agent, a polyalkoxide, and an oxidizing agent.
其中研磨颗粒可为本领域常用研磨颗粒，如二氧化硅、三氧化二铝、二氧化铈、掺杂铝的二氧化硅和/或聚合物颗粒等；研磨颗粒的质量百分比浓度较佳的为1～20％，更佳的为3～10％；研磨颗粒的粒径较佳的为20～200nm，更佳的为20～120nm。The abrasive particles may be abrasive particles commonly used in the art, such as silica, alumina, cerium oxide, aluminum-doped silica, and/or polymer particles; and the mass percentage of the abrasive particles is preferably 1 to 20%, more preferably 3 to 10%; the particle diameter of the abrasive particles is preferably from 20 to 200 nm, more preferably from 20 to 120 nm.
其中唑类化合物，较佳的选自下列中的一种或多种：苯并三氮唑、甲基苯并三氮唑、1,2,4-三氮唑、3-氨基-1,2,4-三氮唑、4-氨基-1,2,4-三氮唑、3，5-二氨基-1，2，4-三氮唑、1-羟基－苯并三氮唑、5-羧基-3-氨基-1,2,4-三氮唑、3-氨基-5-巯基-1,2,4-三氮唑、5-羧基-苯并三氮唑、5-苯基四氮唑、1-苯基-5-巯基-四氮唑、5-乙酸-1H-四氮唑、5-甲基-四氮唑和5-氨基-四氮唑。唑类化合物的质量百分比浓度较佳的为0.005～2％，更佳的为0.01～1％。Wherein the azole compound is preferably selected from one or more of the group consisting of benzotriazole, methylbenzotriazole, 1,2,4-triazole, 3-amino-1,2 , 4-triazole, 4-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 1-hydroxy-benzotriazole, 5- Carboxy-3-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, 5-carboxy-benzotriazole, 5-phenyltetrazole Oxazole, 1-phenyl-5-mercapto-tetrazole, 5-acetic acid-1H-tetrazole, 5-methyl-tetrazole and 5-amino-tetrazole. The mass percentage concentration of the azole compound is preferably from 0.005 to 2%, more preferably from 0.01 to 1%.
其中络合剂为有机酸、有机磷酸和氨羧化合物中的一种或多种。较佳的选自下列中的一种或多种：乙酸、丙酸、草酸、丙二酸、丁二酸、柠檬酸、酒石酸、苹果酸、2-膦酸丁烷-1，2，4-三羧酸、氨基三亚甲基膦酸、羟基亚乙基二膦酸，乙二胺四亚甲基膦酸、二乙烯三胺五亚甲基膦酸、2-羟基膦酸基乙酸、和多氨基多醚基亚甲基膦酸、乙二胺四乙酸、环己烷四乙酸、乙二胺二琥珀酸、二乙烯三胺五乙酸和三乙烯四胺六乙酸、亚氨基二乙酸、氨三乙酸、甘氨酸和/或脯氨酸。络合剂的质量百分比的浓度较佳的为0.01～3％，更佳的为0.05～1％。Wherein the complexing agent is one or more of an organic acid, an organic phosphoric acid and an aminocarboxylic acid compound. Preferred is one or more selected from the group consisting of acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, citric acid, tartaric acid, malic acid, 2-phosphonic acid butane-1, 2, 4- Tricarboxylic acid, aminotrimethylenephosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylenephosphonic acid, diethylenetriamine penta methylene phosphonic acid, 2-hydroxyphosphonic acid acetic acid, and more Amino polyether methylene phosphonic acid, ethylenediaminetetraacetic acid, cyclohexanetetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid and triethylenetetraamine hexaacetic acid, iminodiacetic acid, ammonia tris Acetic acid, glycine and/or proline. The concentration of the mass percentage of the complexing agent is preferably from 0.01 to 3%, more preferably from 0.05 to 1%.
聚烷氧化物为DISPERBYK-2090，DISPERBYK-2091中的一种或多种。聚烷氧化物的浓度为0.005～1％，更佳为0.01～0.5％。
The polyalkoxide is one or more of DISPERBYK-2090, DISPERBYK-2091. The concentration of the polyalkoxide is 0.005 to 1%, more preferably 0.01 to 0.5%.
其中氧化剂较佳的选自下列中的一种或多种：过氧化氢、过氧乙酸，过硫酸钾和/或过硫酸铵。氧化剂的质量百分比浓度较佳的为0.01～5％，更佳的为0.1～2％。Wherein the oxidizing agent is preferably selected from one or more of the group consisting of hydrogen peroxide, peracetic acid, potassium persulfate and/or ammonium persulfate. The mass percentage of the oxidizing agent is preferably from 0.01 to 5%, more preferably from 0.1 to 2%.
其中所述的化学机械抛光液的pH值为2.0～7.0，较佳为3.0～5.0。The chemical mechanical polishing liquid described therein has a pH of from 2.0 to 7.0, preferably from 3.0 to 5.0.
本发明的化学机械抛光液还可以包含pH调节剂、粘度调节剂、消泡剂和杀菌剂等其他本领域添加剂来达到抛光效果。The chemical mechanical polishing liquid of the present invention may further contain other additives in the field such as a pH adjuster, a viscosity modifier, an antifoaming agent and a bactericide to achieve a polishing effect.
本发明的化学机械抛光液可按下述方法制备：将除氧化剂以外的其他组分按比例混合均匀，用pH调节剂(如KOH或HNO3)调节到所需要的pH值，使用前加氧化剂，混合均匀即可。The chemical mechanical polishing liquid of the present invention can be prepared by uniformly mixing the components other than the oxidizing agent, adjusting the pH to a desired pH with a pH adjusting agent (such as KOH or HNO3), and adding an oxidizing agent before use. Mix well.
本发明的抛光液可制备浓缩样品，在使用前用去离子水稀释到本发明的浓度范围并加入氧化剂。本发明所用试剂及原料均市售可得。The polishing liquid of the present invention can prepare a concentrated sample which is diluted with deionized water to the concentration range of the present invention and added with an oxidizing agent before use. The reagents and starting materials used in the present invention are commercially available.
本发明的积极进步效果在于：The positive effects of the present invention are:
1.本发明的抛光液具有较高的钴、钽和二氧化硅的去除速率，金属铜的去除速率可调。1. The polishing liquid of the present invention has a high removal rate of cobalt, cerium and silicon dioxide, and the removal rate of metallic copper is adjustable.
2.本发明的抛光液具有较强的控制金属钴的腐蚀的能力。2. The polishing liquid of the present invention has a strong ability to control corrosion of metallic cobalt.
图1为钴晶片在对比抛光液1中浸泡后的表面光学显微镜图；1 is a surface optical micrograph of a cobalt wafer after being immersed in a comparative polishing liquid 1;
图2为钴晶片在本发明的抛光液2中浸泡后的表面光学显微镜图。2 is a surface optical micrograph of a cobalt wafer after being immersed in the polishing liquid 2 of the present invention.
发明内容Summary of the invention
下面通过具体实施例进一步阐述本发明的优点，但本发明的保护范围不仅仅局限于下述实施例。The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited only to the following examples.
表1给出了对比抛光液和本发明的抛光液的配方，按表中配方，将除氧化剂以外的其他各成分简单均匀混合，余量为水，之后采用氢氧化钾、氨水和硝酸调节至合适pH值，即可制得各实施例抛光液，使用前加入氧化剂，混合均匀即可。
Table 1 shows the formulation of the comparative polishing liquid and the polishing liquid of the present invention. According to the formula in the table, the components other than the oxidizing agent are simply and uniformly mixed, and the balance is water, and then adjusted to potassium hydroxide, ammonia water and nitric acid to The slurry of each example can be prepared by using a suitable pH value, and the oxidizing agent can be added before use, and the mixture can be uniformly mixed.
表1 对比抛光液和本发明的抛光液Table 1 Comparative polishing liquid and polishing liquid of the present invention
效果实施例1Effect Example 1
采用对比抛光液和本发明的抛光液按照下述条件对铜(Cu，厚度为15000埃)、钽(Ta，厚度为2500埃)、二氧化硅(TEOS，厚度为15000埃)和钴(Co，厚度为1500埃)晶片进行抛光。抛光条件：抛光机台为Mirra,抛光垫为Fujibo pad,下压力为1.5psi，转速为抛光盘/抛光头＝93/87rpm，抛光液流速为100ml/min，抛光时间为1min。抛光结果见表2。Using a comparative polishing liquid and the polishing liquid of the present invention, copper (Cu, thickness: 15,000 angstroms), tantalum (Ta, thickness: 2,500 angstroms), silicon dioxide (TEOS, thickness: 15,000 angstroms), and cobalt (Co) were used under the following conditions. The wafer was polished to a thickness of 1500 angstroms. Polishing conditions: the polishing machine is Mirra, the polishing pad is Fujibo pad, the pressing pressure is 1.5 psi, the rotation speed is polishing disk/buffing head=93/87 rpm, the polishing liquid flow rate is 100 ml/min, and the polishing time is 1 min. The polishing results are shown in Table 2.
表2 对比抛光液和本发明抛光液对铜(Cu)、钽(Ta)、二氧化硅(TEOS)和钴(Co)的去除速率和钴的静态腐蚀速率Table 2 Comparison of removal rates of copper (Cu), tantalum (Ta), silicon dioxide (TEOS) and cobalt (Co) and static corrosion rate of cobalt by the polishing liquid and the polishing liquid of the present invention
效果实施例2Effect Example 2
将钴晶片垂直插入对比抛光液1及抛光液2中，并使其下半部2浸入抛光液中，上半部1露出于抛光液外，从而研究抛光液对晶片的腐蚀影响。浸泡10分钟后，测量浸泡前后晶片的厚度差，从而得出钴的静态腐蚀速率＝(浸泡后的厚度‐浸泡前的厚度)/10，结果见表2。同时，使用光学显微镜，研究被浸泡后晶片的表面形貌。钴晶片在对比抛光液1中浸泡后的表面光学显微镜图如附图1所示，其中，可以清楚看出，浸入对比抛光液1中的下半部2，具有明显的腐蚀现象，与未浸泡入对比抛光液1中的上半部1形成显著区别。图2为钴晶片在本发明的抛光液2中浸泡后的表面光学显微镜图，其中，可以清楚看出，浸入抛光液2中的下半部2，并未出现腐蚀现象，与未浸泡入抛光液2中的上半部1无明显区别。The cobalt wafer was vertically inserted into the comparative polishing liquid 1 and the polishing liquid 2, and the lower half 2 was immersed in the polishing liquid, and the upper half 1 was exposed outside the polishing liquid to investigate the influence of the polishing liquid on the wafer. After soaking for 10 minutes, the difference in thickness of the wafer before and after the immersion was measured, thereby obtaining a static corrosion rate of cobalt = (thickness after immersion - thickness before immersion)/10, and the results are shown in Table 2. At the same time, the surface morphology of the wafer after being immersed was investigated using an optical microscope. The surface optical micrograph of the cobalt wafer after immersion in the comparative polishing liquid 1 is as shown in Fig. 1, wherein it can be clearly seen that the lower half 2 immersed in the comparative polishing liquid 1 has obvious corrosion phenomenon, and is not soaked. A significant difference is formed in the upper half 1 of the comparative polishing liquid 1. 2 is a surface optical micrograph of a cobalt wafer after being immersed in the polishing liquid 2 of the present invention, wherein it can be clearly seen that the lower half 2 immersed in the polishing liquid 2 does not exhibit corrosion, and is not soaked into the polishing. There is no significant difference in the upper half 1 of the liquid 2.
如表2和图1～2所示，与对比例相比，实施例中添加一定量的聚烷氧化物DISPERBYK‐2090和DISPERBYK‐2091后，钴的腐蚀速率得到有效的抑制，对金属钴有很好的保护，显示了较好的抗腐蚀性能。加入聚烷氧化物后钴的去除速率虽略有降低，但仍保持较高的去除速率，同时，本发明的抛光液的二氧化硅、钽及铜的去除速率可通过各组分的含量进行调节，能满足不同制程的要求。As shown in Table 2 and Figures 1-2, the corrosion rate of cobalt was effectively inhibited by adding a certain amount of polyalkoxides DISPERBYK-2090 and DISPERBYK-2091 in the examples compared with the comparative examples. Very good protection, showing good corrosion resistance. Although the removal rate of cobalt is slightly decreased after the addition of the polyalkoxide, the removal rate is maintained, and the removal rates of silica, cerium and copper of the polishing liquid of the present invention can be carried out by the content of each component. Adjustment, can meet the requirements of different processes.
应当理解的是，本发明所述wt％均指的是质量百分含量。It should be understood that the wt% of the present invention refers to the mass percentage.
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。
The specific embodiments of the present invention have been described in detail above, but are merely exemplary, and the invention is not limited to the specific embodiments described above. Any equivalent modifications and substitutions to the invention are also within the scope of the invention. Accordingly, equivalents and modifications may be made without departing from the spirit and scope of the invention.
Claims (21)
- 一种用于钴阻挡层抛光的化学机械抛光液，其特征在于，所述化学机械抛光液含有研磨颗粒、唑类化合物、络合剂、聚烷氧化物和氧化剂。A chemical mechanical polishing liquid for polishing a cobalt barrier layer, characterized in that the chemical mechanical polishing liquid contains abrasive particles, an azole compound, a complexing agent, a polyalkoxide, and an oxidizing agent.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述研磨颗粒选自二氧化硅、三氧化二铝、二氧化铈、掺杂铝的二氧化硅和/或聚合物颗粒。The chemical mechanical polishing liquid according to claim 1, wherein the abrasive particles are selected from the group consisting of silica, alumina, cerium oxide, aluminum-doped silica, and/or polymer particles.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述研磨颗粒的浓度为质量百分比浓度1～20％。The chemical mechanical polishing liquid according to claim 1, wherein the abrasive particles have a concentration of 1 to 20% by mass.
- 如权利要求3所述的化学机械抛光液，其特征在于，所述研磨颗粒的浓度为质量百分比浓度3～10％。The chemical mechanical polishing liquid according to claim 3, wherein the abrasive particles have a concentration of 3 to 10% by mass.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述研磨颗粒的粒径为20～200nm。The chemical mechanical polishing liquid according to claim 1, wherein the abrasive particles have a particle diameter of 20 to 200 nm.
- 如权利要求5所述的化学机械抛光液，其特征在于，所述研磨颗粒的粒径为20～120nm。The chemical mechanical polishing liquid according to claim 5, wherein the abrasive particles have a particle diameter of 20 to 120 nm.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述唑类化合物选自下列中的一种或多种：苯并三氮唑、甲基苯并三氮唑、1,2,4-三氮唑、3-氨基-1,2,4-三氮唑、4-氨基-1,2,4-三氮唑、3，5-二氨基-1，2，4-三氮唑、1-羟基－苯并三氮唑、5-羧基-3-氨基-1,2,4-三氮唑、3-氨基-5-巯基-1,2,4-三氮唑、5-羧基-苯并三氮唑、5-苯基四氮唑、1-苯基-5-巯基-四氮唑、5-乙酸-1H- 四氮唑、5-甲基-四氮唑和5-氨基-四氮唑。The chemical mechanical polishing liquid according to claim 1, wherein the azole compound is one or more selected from the group consisting of benzotriazole, methylbenzotriazole, 1,2, 4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole , 1-hydroxy-benzotriazole, 5-carboxy-3-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, 5-carboxyl -benzotriazole, 5-phenyltetrazolium, 1-phenyl-5-mercapto-tetrazole, 5-acetic acid-1H- Tetrazolium, 5-methyl-tetrazole and 5-amino-tetrazole.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述唑类化合物的浓度为质量百分比0.005～2％。The chemical mechanical polishing liquid according to claim 1, wherein the concentration of the azole compound is 0.005 to 2% by mass.
- 如权利要求8所述的化学机械抛光液，其特征在于，所述唑类化合物的浓度为质量百分比0.01～1％。The chemical mechanical polishing liquid according to claim 8, wherein the concentration of the azole compound is 0.01 to 1% by mass.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述络合剂为有机酸、有机磷酸和氨羧化合物中的一种或多种。The chemical mechanical polishing liquid according to claim 1, wherein the complexing agent is one or more of an organic acid, an organic phosphoric acid, and an aminocarboxylic acid compound.
- 如权利要求10所述的化学机械抛光液，其特征在于，所述络合剂选自下列中的一种或多种：乙酸、丙酸、草酸、丙二酸、丁二酸、柠檬酸、酒石酸、苹果酸、乳酸、2-膦酸丁烷-1，2，4-三羧酸、氨基三亚甲基膦酸、羟基亚乙基二膦酸，乙二胺四亚甲基膦酸、二乙烯三胺五亚甲基膦酸、2-羟基膦酸基乙酸、和多氨基多醚基亚甲基膦酸、乙二胺四乙酸、环己烷四乙酸、乙二胺二琥珀酸、二乙烯三胺五乙酸和三乙烯四胺六乙酸、亚氨基二乙酸、氨三乙酸、甘氨酸和/或脯氨酸。The chemical mechanical polishing liquid according to claim 10, wherein the complexing agent is selected from one or more of the group consisting of acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, citric acid, Tartaric acid, malic acid, lactic acid, 2-phosphonic acid butane-1,2,4-tricarboxylic acid, aminotrimethylenephosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylenephosphonic acid, two Ethylene triamine penta methylene phosphonic acid, 2-hydroxyphosphonic acid acetic acid, and polyamino polyether methylene phosphonic acid, ethylenediaminetetraacetic acid, cyclohexanetetraacetic acid, ethylenediamine disuccinic acid, two Ethylene triamine pentaacetic acid and triethylenetetramine hexaacetic acid, iminodiacetic acid, ammonia triacetic acid, glycine and/or valine.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述络合剂的浓度为质量百分比0.01～3％。The chemical mechanical polishing liquid according to claim 1, wherein the concentration of the complexing agent is 0.01 to 3% by mass.
- 如权利要求12所述的化学机械抛光液，其特征在于，所述络合剂的浓度为质量百分比0.05～1％。 The chemical mechanical polishing liquid according to claim 12, wherein the concentration of the complexing agent is 0.05 to 1% by mass.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述聚烷氧化物为DISPERBYK-2090，DISPERBYK-2091。The chemical mechanical polishing liquid according to claim 1, wherein the polyalkoxide is DISPERBYK-2090, DISPERBYK-2091.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述聚烷氧化物浓度为质量百分比0.005～1％。The chemical mechanical polishing liquid according to claim 1, wherein the polyalkoxide concentration is 0.005 to 1% by mass.
- 如权利要求15所述的化学机械抛光液，其特征在于，所述聚烷氧化物浓度为质量百分比0.01～0.5％。The chemical mechanical polishing liquid according to claim 15, wherein the polyalkoxide concentration is 0.01 to 0.5% by mass.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述氧化剂选自下列中的一种或多种：过氧化氢、过氧乙酸，过硫酸钾和过硫酸铵。The chemical mechanical polishing liquid according to claim 1, wherein the oxidizing agent is selected from one or more of the group consisting of hydrogen peroxide, peracetic acid, potassium persulfate and ammonium persulfate.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述氧化剂的浓度为质量百分比0.01～5％。The chemical mechanical polishing liquid according to claim 1, wherein the concentration of the oxidizing agent is 0.01 to 5% by mass.
- 如权利要求18所述的化学机械抛光液，其特征在于，所述氧化剂的浓度为质量百分比0.1～2％。The chemical mechanical polishing liquid according to claim 18, wherein the concentration of the oxidizing agent is 0.1 to 2% by mass.
- 如权利要求1所述的化学机械抛光液，其特征在于，所述的化学机械抛光液的pH值2～7。The chemical mechanical polishing liquid according to claim 1, wherein said chemical mechanical polishing liquid has a pH of from 2 to 7.
- 如权利要求20所述的化学机械抛光液，其特征在于，所述的化学机械抛光液的pH值为3～5。 The chemical mechanical polishing liquid according to claim 20, wherein said chemical mechanical polishing liquid has a pH of from 3 to 5.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310727883.1 | 2013-12-25 | ||
| CN201310727883.1A CN104745085B (en) | 2013-12-25 | 2013-12-25 | A kind of chemical mechanical polishing liquid for cobalt barrier polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2015096630A1 true WO2015096630A1 (en) | 2015-07-02 |
Family
ID=53477524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2014/093682 WO2015096630A1 (en) | 2013-12-25 | 2014-12-12 | Chemical mechanical polishing liquid for polishing cobalt barrier layer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104745085B (en) |
| WO (1) | WO2015096630A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109370439A (en) * | 2018-10-22 | 2019-02-22 | 河北工业大学 | For inhibiting the polishing slurries of copper cobalt barrier layer galvanic corrosion and cobalt surface pitting |
| CN113278366B (en) * | 2019-12-31 | 2022-05-20 | 清华大学 | Copper interconnection cobalt barrier layer of substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009048203A1 (en) * | 2007-10-10 | 2009-04-16 | Cheil Industries Inc. | Slurry composition for chemical mechanical polishing of metal and polishing method using the same |
| CN101550319A (en) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN101747843A (en) * | 2008-12-19 | 2010-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN102093818A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Chemical mechanical polishing slurry and application thereof |
| CN102093817A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing tantalum barrier |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6503418B2 (en) * | 1999-11-04 | 2003-01-07 | Advanced Micro Devices, Inc. | Ta barrier slurry containing an organic additive |
| SG144688A1 (en) * | 2001-07-23 | 2008-08-28 | Fujimi Inc | Polishing composition and polishing method employing it |
| US7842193B2 (en) * | 2005-09-29 | 2010-11-30 | Fujifilm Corporation | Polishing liquid |
| JP2009081200A (en) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | Polishing liquid |
| JP5178121B2 (en) * | 2007-09-28 | 2013-04-10 | 富士フイルム株式会社 | Polishing liquid and polishing method |
| CN101463225A (en) * | 2007-12-21 | 2009-06-24 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing solution for barrier layer |
| KR101202720B1 (en) * | 2008-02-29 | 2012-11-19 | 주식회사 엘지화학 | Aqueous slurry composition for chemical mechanical polishing and chemical mechanical polishing method |
| US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
| JP5625044B2 (en) * | 2009-04-22 | 2014-11-12 | エルジー・ケム・リミテッド | Slurries for chemical mechanical polishing |
| JP2011003665A (en) * | 2009-06-17 | 2011-01-06 | Jsr Corp | Aqueous dispersant for chemical-mechanical polishing, and chemical-mechanical polishing method using the same |
| JP2012182158A (en) * | 2011-02-08 | 2012-09-20 | Hitachi Chem Co Ltd | Polishing liquid and method for polishing substrate using polishing liquid |
| CN102304327A (en) * | 2011-07-05 | 2012-01-04 | 复旦大学 | Polishing solution based on metal Co for polishing process |
| CN102952466A (en) * | 2011-08-24 | 2013-03-06 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid |
| TWI456013B (en) * | 2012-04-10 | 2014-10-11 | Uwiz Technology Co Ltd | Polishing slurry composition |
-
2013
- 2013-12-25 CN CN201310727883.1A patent/CN104745085B/en active Active
-
2014
- 2014-12-12 WO PCT/CN2014/093682 patent/WO2015096630A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009048203A1 (en) * | 2007-10-10 | 2009-04-16 | Cheil Industries Inc. | Slurry composition for chemical mechanical polishing of metal and polishing method using the same |
| CN101550319A (en) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN101747843A (en) * | 2008-12-19 | 2010-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN102093818A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Chemical mechanical polishing slurry and application thereof |
| CN102093817A (en) * | 2009-12-11 | 2011-06-15 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing tantalum barrier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104745085A (en) | 2015-07-01 |
| CN104745085B (en) | 2018-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI443729B (en) | Polishing liquid and polishing method using the same | |
| TWI434955B (en) | Method for chemical mechanical planarization of a tungsten-containing substrate | |
| US7316977B2 (en) | Chemical-mechanical planarization composition having ketooxime compounds and associated method for use | |
| KR101144419B1 (en) | Method and composition for chemical mechanical planarization of a metal-containing substrate | |
| WO2017114301A1 (en) | Chemical and mechanical polishing slurry for metal | |
| JP2008512871A (en) | Aqueous slurry containing metalate-modified silica particles | |
| TW201336977A (en) | Slurry for cobalt applications | |
| WO2017114309A1 (en) | Chemical mechanical polishing slurry and application thereof | |
| KR20080004454A (en) | Novel polishing slurries and abrasive-free solutions having a multifunctional activator | |
| CN108250977B (en) | Chemical mechanical polishing solution for barrier layer planarization | |
| TWI635168B (en) | Chemical mechanical polishing slurry | |
| JP2009514196A (en) | Chemical mechanical polishing slurry for tantalum barrier layer | |
| TWI642769B (en) | Chemical mechanical polishing slurry for polishing aluminium and method thereof | |
| WO2018120808A1 (en) | Chem-mechanical polishing liquid for barrier layer | |
| TW201336950A (en) | Alkaline chemical mechanical polishing liquid | |
| JP5094112B2 (en) | Polishing liquid | |
| WO2015096630A1 (en) | Chemical mechanical polishing liquid for polishing cobalt barrier layer | |
| JP5308984B2 (en) | Metal film polishing composition and metal film polishing method | |
| CN109972145A (en) | A kind of chemical mechanical polishing liquid | |
| TWI829623B (en) | Chemical mechanical polishing slurry for the planarization of the barrier film | |
| JP2001144044A (en) | Metal polishing fluid and polishing method using it | |
| CN111378367A (en) | Chemical mechanical polishing solution | |
| KR100762091B1 (en) | Cmp slurry composition for copper damascene process | |
| CN114686116A (en) | Chemical mechanical polishing liquid and use method thereof | |
| TW201723113A (en) | Chemical mechanical polishing slurry used for barrier layer planarization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14875335 Country of ref document: EP Kind code of ref document: A1 |
|
| NENP | Non-entry into the national phase |
Ref country code: DE |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 14875335 Country of ref document: EP Kind code of ref document: A1 |
|
| 32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 17.10.2016) |
|
| 122 | Ep: pct application non-entry in european phase |
Ref document number: 14875335 Country of ref document: EP Kind code of ref document: A1 |