CN113122142A - Chemical mechanical polishing solution - Google Patents
Chemical mechanical polishing solution Download PDFInfo
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- CN113122142A CN113122142A CN201911402335.5A CN201911402335A CN113122142A CN 113122142 A CN113122142 A CN 113122142A CN 201911402335 A CN201911402335 A CN 201911402335A CN 113122142 A CN113122142 A CN 113122142A
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- polishing solution
- mechanical polishing
- copper
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- 239000000126 substance Substances 0.000 title claims abstract description 36
- 230000007547 defect Effects 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
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- 238000005260 corrosion Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000003112 inhibitor Substances 0.000 claims abstract description 15
- 239000007800 oxidant agent Substances 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 15
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 13
- 239000010452 phosphate Substances 0.000 claims abstract description 13
- 239000004094 surface-active agent Substances 0.000 claims abstract description 13
- 239000008139 complexing agent Substances 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
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- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 claims description 2
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- RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 claims description 2
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- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 2
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 claims description 2
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- 239000004475 Arginine Substances 0.000 claims description 2
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- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 claims description 2
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- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims description 2
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims description 2
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- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 claims description 2
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 claims description 2
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 claims description 2
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 claims description 2
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- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004472 Lysine Substances 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 claims description 2
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- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 235000004279 alanine Nutrition 0.000 claims description 2
- 150000004996 alkyl benzenes Chemical class 0.000 claims description 2
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- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 235000013922 glutamic acid Nutrition 0.000 claims description 2
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- 125000003976 glyceryl group Chemical group [H]C([*])([H])C(O[H])([H])C(O[H])([H])[H] 0.000 claims description 2
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 claims description 2
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- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 229960003330 pentetic acid Drugs 0.000 claims description 2
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
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- 239000007789 gas Substances 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 92
- 239000010949 copper Substances 0.000 abstract description 77
- 229910052802 copper Inorganic materials 0.000 abstract description 76
- 229910052715 tantalum Inorganic materials 0.000 abstract description 25
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 25
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The invention provides a chemical mechanical polishing solution which comprises silicon dioxide grinding particles, a corrosion inhibitor, a complexing agent, an oxidant, a metal surface defect improver, a phosphate surfactant and water. The chemical mechanical polishing solution can be applied to polishing of metal copper interconnection, has high copper removal rate and low tantalum removal rate, has higher copper/tantalum removal rate selection ratio, improves the dishing depression and dielectric layer depression of a polished copper wire, improves the surface roughness of the polished copper and reduces defects.
Description
Technical Field
The present invention relates to the field of chemical mechanical polishing.
Background
With the development of semiconductor technology and the miniaturization of electronic parts, copper is widely used in electronic element circuits as a material having good conductivity. Because the resistance of copper is small, the transfer speed of signals between transistors in a circuit can be accelerated, and the parasitic capacitance capability and the electromigration sensitivity are smaller. These electrical advantages have led to copper with good prospects for the development of semiconductor technology.
However, during the fabrication of copper integrated circuits, it has been found that copper migrates or diffuses into the transistor areas of the integrated circuits, thereby adversely affecting the performance of the transistors of the semiconductor, and therefore copper interconnects can only be fabricated in a damascene process, i.e.: and forming a groove in the first layer, filling the groove with a copper barrier layer and copper, and forming a metal wire to cover the dielectric layer. The excess copper/copper barrier layer on the dielectric layer is then removed by chemical mechanical polishing, leaving a single interconnect line in the trench. The copper chemical mechanical polishing process is generally divided into 3 steps: step 1, removing a large amount of copper on the surface of the substrate by using a high downward pressure at a high and efficient removal rate and leaving copper with a certain thickness, step 2, removing the residual metal copper by using a low removal rate and stopping on the barrier layer, and step 3, removing the barrier layer, a part of the dielectric layer and the metal copper by using a barrier layer polishing solution to realize planarization.
In the copper polishing process, on one hand, redundant copper on the barrier layer is removed as soon as possible, and on the other hand, the dishing of the polished copper wire is reduced as much as possible. The metal layer is partially recessed above the copper lines prior to copper polishing. During polishing, copper on the dielectric material is easy to remove under high bulk pressure, and the polishing pressure on the copper at the concave part is lower than the bulk pressure, so that the copper removal rate is low. As the polishing progresses, the height difference of the copper is gradually reduced to achieve planarization. However, if the chemical action of the copper polishing solution is too strong and the static etch rate is too high during polishing, the passivation film of copper is easily removed even at a low pressure (e.g., at the dishing of the copper line), resulting in a decrease in planarization efficiency and an increase in dishing after polishing.
With the development of integrated circuits, on the one hand, in the conventional IC industry, in order to improve the integration level, reduce the power consumption, shorten the delay time, and make the line width narrower and narrower, the dielectric layer is made of a low dielectric (low-k) material with lower mechanical strength, the number of layers of the wiring is also increased, and in order to ensure the performance and stability of the integrated circuit, the requirement for copper chemical mechanical polishing is also increased. It is required to reduce polishing pressure, improve planarization of the copper wire surface, and control surface defects while ensuring the copper removal rate. On the other hand, due to physical limitations, line widths cannot be infinitely reduced, and the semiconductor industry is not simply relying on integrating more devices on a single chip to improve performance, but is turning to multi-chip packaging.
Through Silicon Via (TSV) technology has gained wide acceptance in the industry as a new technology for achieving interconnection between chips by making vertical conduction between chips and between wafers. The TSV can enable the stacking density of the chips in the three-dimensional direction to be the largest, the overall size to be the smallest, and the chip speed and the low power consumption performance to be greatly improved. The conventional IC process is combined to form a copper via penetrating through a silicon substrate, that is, copper is filled in a TSV opening to achieve conduction, and the excess copper after filling needs to be removed by chemical mechanical polishing to achieve planarization. Unlike the conventional IC industry, the excess copper on the filled back surface is typically several to tens of microns thick due to the deep through-silicon vias. In order to quickly remove this excess copper. It is generally desirable to have a high copper removal rate while having a polished surface with good flatness. The existing polishing solution can generate defects of disc-shaped recess, medium layer erosion, copper residue, corrosion and the like after polishing.
Disclosure of Invention
In order to solve the above problems, the present invention provides a chemical mechanical polishing solution, which comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, a metal surface defect improver, a phosphate surfactant, and water. By compounding the phosphate surfactant and the corrosion inhibitor, the polishing solution has high copper removal rate and low tantalum barrier layer removal rate, improves the removal rate selection ratio of the polishing solution to the copper and tantalum barrier layers, improves the dish-shaped depression and dielectric layer erosion of the polished copper wire, and simultaneously improves the surface roughness of the polished copper and reduces defects by adding the polyalcohol or the hydrophilic polymer.
Further, the structural formula of the phosphate ester surfactant is as follows:
x is RO or RO- (CH)2CH2O) n, or RCOO- (CH)2CH2O) n, R is C8-C22 alkyl, alkylbenzene or glyceryl, and n is 3-30; h, K, NH4Or Na.
Further, the mass concentration of the phosphate ester surfactant is 0.001-0.1 wt%.
Further, the mass concentration of the phosphate ester surfactant is 0.005-0.05 wt%.
Further, the metal surface defect improver includes a polyol and/or a hydrophilic polymer.
Further, the polyalcohol is one or more of ethylene glycol, 1, 4-butanediol, diethylene glycol and glycerol.
Further, the hydrophilic polymer is one or more of polyvinylpyrrolidone, polyacrylamide and polyoxyethylene polyoxypropylene block polymer.
Further, the molecular weight of the hydrophilic polymer is 1000-16000.
Further, the molecular weight of the hydrophilic polymer is 1000-10000.
Further, the mass concentration of the metal surface defect improver is 0.01-3 wt%.
Further, the mass concentration of the metal surface defect improver is 0.1-2 wt%.
Further, the average particle size of the silicon dioxide grinding particles is 20-120 nm.
Further, the average particle size of the silica abrasive grains is 30-100 nm.
Further, the mass concentration of the silica abrasive particles is 0.05 to 1 wt%.
Further, the concentration of the silicon dioxide grinding particles is 0.1-0.5 wt%.
Further, the complexing agent is one or more of glycine, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediaminetetraacetic acid, cyclohexanediaminetetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid, and triethylenetetraminehexaacetic acid.
Further, the mass concentration of the complexing agent is 0.1-3 wt%.
Further, the mass concentration of the complexing agent is 0.5-1.5 wt%.
Further, the corrosion inhibitor is an azole compound containing no benzene ring.
Further, the azole compound without the benzene ring is one or more of 1,2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxy-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazole and 5-amino-1H-tetrazole.
Further, the mass concentration of the corrosion inhibitor is 0.001-0.5 wt%.
Further, the mass concentration of the corrosion inhibitor is 0.005-0.2 wt%.
Further, the oxidizing agent is hydrogen peroxide.
Further, the mass concentration of the oxidant is 0.05-3 wt%.
Further, the mass concentration of the oxidant is 0.1-1.5 wt%.
Further, the pH value of the chemical mechanical polishing solution is 5-8.
The chemical mechanical polishing solution of the present invention may further comprise other additives in the art, such as a pH adjuster, an antifoaming agent, and a bactericide.
The chemical mechanical polishing solution of the present invention can be prepared by concentration, diluted with deionized water and added with an oxidizing agent to the concentration range of the present invention before use.
The reagents of the present invention are commercially available.
In the present invention, the wt% is a mass percentage concentration.
Compared with the prior art, the invention has the advantages that:
compared with the prior art, the invention has the advantages that: 1) the polishing solution has high copper removal rate and low tantalum removal rate, so that the polishing solution has high copper/tantalum removal rate selection ratio; 2) the polishing solution can improve the disc-shaped depression of a polished copper wire and the erosion of a dielectric layer; 3) the polishing solution can improve the surface roughness of copper after polishing and reduce defects.
Detailed Description
The advantages of the present invention are further illustrated by the following specific examples, but the scope of the present invention is not limited to the following examples.
Examples
Table 1 shows examples 1-17 of the chemical mechanical polishing solutions of the present invention, in which the components other than the oxidizing agent were mixed uniformly in the formulations shown in the tables, and water was added to make up the mass percent to 100%. With KOH or HNO3Adjusting to the required pH value. Adding oxidant before use, and mixing well. The polishing solution can also be prepared into a concentrated sample firstly, and is diluted by deionized water and added with an oxidant for use when in use.
TABLE 1 polishing slurry compositions of inventive examples 1-17
Table 2 shows examples 18 to 29 and comparative examples 1 to 6 of the chemical mechanical polishing liquid of the present invention, in which the components other than the oxidizing agent were mixed uniformly in the formulation shown in the table, and water was added to make up the mass% to 100%. With KOH or HNO3Adjusting to the required pH value. Adding oxidant before use, and mixing well.
TABLE 2 compositions of comparative example polishing solutions 1 to 6 and examples 18 to 29
Effects of the embodiment
Using the polishing liquids of comparative examples 1 to 6 and inventive examples 18 to 29, the polishing was carried out on the bare copper (Cu) and tantalum (Ta) under the following conditions. The specific polishing conditions are as follows: cu polishing pressures of 1.5psi and 2.0psi, tantalum polishing pressure of 1.5 psi; the rotation speed of the polishing disk and the polishing head is 73/67rpm, the polishing pad IC1010 and the flow rate of the polishing solution is 350mL/min, the polishing machine is 12' Reflexion LK, and the polishing time is 1 min. The copper/tantalum removal rates for each example were measured separately and the selectivity for the removal rates was calculated and is shown in Table 3.
TABLE 3 removal rates and removal rate selection ratios for comparative example polishing solutions 1 to 6 and examples 18 to 29
As can be seen from Table 3, the polishing solutions of the examples of the present invention have a higher copper/tantalum removal rate selectivity ratio than the comparative examples. The polishing solution of comparative example 1 only contains abrasive particles, a complexing agent and an oxidizing agent, and has high removal rates for copper and tantalum, so that the removal rate selectivity for copper/tantalum is low; the polishing solution of the comparative example 2 is added with the corrosion inhibitor on the basis of the polishing solution of the comparative example 1, so that the removal rate of tantalum is reduced, and the removal rate selection ratio of the polishing solution to copper/tantalum is improved to a certain extent. However, the polishing slurry of comparative example 2 still has an insufficiently high selectivity of copper/tantalum removal rate to satisfy the polishing requirements for tantalum as a barrier layer.
Comparative examples 3 and 4, which employ a combination of azole corrosion inhibitor and phosphate ester surfactant without benzene ring, were added as compared to inventive example 18, but comparative example 3 had too low a pH and higher removal rates for copper and tantalum, resulting in a low copper/tantalum removal rate selectivity. The pH value of comparative example 4 was too high, which resulted in a greatly reduced copper removal rate and failure to effectively remove copper. From the comparison of the components of example 18 with those of comparative example 5, it was found that the selection of the combination of benzotriazole, which is an azole corrosion inhibitor having a benzene ring, and a phosphate-based surfactant, although the removal rate of tantalum was reduced, greatly suppressed the removal rate of copper, and copper could not be effectively removed. As can be seen from comparative example 6 and examples 18-29, the addition of either the polyol or the hydrophilic polymer did not affect the copper and tantalum removal rates.
Effect of embodiment two
The patterned copper wafers were polished under the following conditions using the polishing liquids of comparative examples 2, 3 and 6 and inventive examples 18 to 29. Polishing conditions: the rotation speed of the polishing disk and the polishing head is 73/67rpm, the polishing pad IC1010, the flow rate of the polishing solution is 350mL/min, and the polishing machine is 12' Reflexion LK. The patterned copper wafer was polished on polishing disk 1 with a down force of 2psi to a residual copper level
The residual copper was then removed by applying a down force of 1.5psi to the polishing pad 2. Measuring dish-shaped depression value (Dishing) of copper wire array area of 5um/1um (copper wire/dielectric material line width) on the copper wafer with pattern and dielectric layer invasion by Dektak-XT step instrumentEtching (Erosion) and copper surface Roughness (roughnesss), the number of surface defects of the polished copper blank wafer was measured by a surface defect scanner SP2, and the dishing value and dielectric layer Erosion value of the obtained copper wire, and the results of the copper surface Roughness and the number of surface defects are shown in table 4.
TABLE 4 polishing effects of comparative example polishing liquids 2, 3 and 6 and examples 18 to 29
As can be seen from Table 4, compared with the comparative examples, the polishing solution of the examples of the present invention has less dishing and dielectric erosion of the copper wire, less surface roughness and surface defects of the copper after polishing, and greatly improved surface morphology. The polishing solution of the comparative example 2 is added with the corrosion inhibitor on the basis of the polishing solution of the comparative example 1, so that the removal rate of tantalum is reduced, and the removal rate selection ratio of the polishing solution to copper/tantalum is improved to a certain extent. However, the dishing and dielectric erosion of the copper wire polished by the polishing solution of comparative example 2, as well as the surface roughness and defects of the polished copper wire, were both large, and the surface morphology of the copper wire was poor.
Compared with the embodiment 18 of the invention, the combination of azole corrosion inhibitor without benzene ring and phosphate ester surfactant is added in the comparative example 3, but the pH value of the comparative example 3 is too low, the removal rate of copper and tantalum is also higher, and the dishing of the copper wire and the erosion of the dielectric layer are both larger. The blank copper wafers after polishing of comparative example 6 and example 18 were subjected to defect scanning using a defect scanner SP2 after cleaning, and as a result, it was found that the number of defects on the surface of the copper wafer after polishing of comparative example 6 to which no metal surface defect improver was added was significantly higher than that of example 18. Therefore, the addition of the metal surface defect improver can further improve the surface roughness and surface defects of copper after polishing. As can be seen from comparative example 6 and examples 18 to 29, the addition of the polyol or the hydrophilic polymer significantly reduces the surface roughness and surface defects of the copper after polishing, thereby improving the surface morphology of the copper after polishing.
According to the polishing solution provided by the embodiment of the invention, by using the grinding particles with the particle size and the particle size distribution index within a certain range and a proper pH value, and adding the combination of the azole corrosion inhibitor, the phosphate surfactant and the metal surface defect improver which do not contain benzene rings into the polishing solution, the high removal rate of copper is maintained, the removal rate of the tantalum barrier layer is reduced, and the effect of improving the removal rate selection ratio of the polishing solution to the copper and the tantalum barrier layer is realized; meanwhile, the polishing solution is used for polishing the wafer, can improve the Dishing (Dishing) and dielectric layer Erosion (Erosion) of the polished copper wire, can obviously improve the surface roughness of the polished copper wire, and can reduce surface defects.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (19)
1. A chemical mechanical polishing solution comprises silicon dioxide abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizing agent, a metal surface defect improving agent, a phosphate ester surfactant and water.
2. The chemical mechanical polishing solution of claim 1, wherein the phosphate surfactant has the formula:
x is RO or RO- (CH)2CH2O) n, or RCOO- (CH)2CH2O) n, R is C8-C22 alkyl, alkylbenzene or glyceryl, and n is 3-30; h, K, NH4Or Na.
3. The chemical mechanical polishing solution according to claim 1, wherein the phosphate surfactant is present in an amount of 0.001 to 0.1 wt%.
4. The chemical mechanical polishing solution according to claim 1, wherein the metal surface defect improver comprises a polyhydric alcohol and/or a hydrophilic polymer.
5. The chemical mechanical polishing solution according to claim 4, wherein the polyhydric alcohol is one or more of ethylene glycol, 1, 4-butanediol, diethylene glycol, and glycerol.
6. The chemical mechanical polishing solution of claim 4, wherein the hydrophilic polymer is one or more of polyvinylpyrrolidone, polyacrylamide, and polyoxyethylene polyoxypropylene block polymer.
7. The chemical mechanical polishing solution according to claim 6, wherein the hydrophilic polymer has a molecular weight of 1000 to 16000.
8. The chemical mechanical polishing solution according to claim 7, wherein the hydrophilic polymer has a molecular weight of 1000 to 10000.
9. The chemical mechanical polishing solution according to claim 1, wherein the metal surface defect improver is contained in an amount of 0.01 to 3 wt%.
10. The chemical mechanical polishing solution according to claim 1, wherein the silica abrasive particles have an average particle size of 20 to 120 nm.
11. The chemical mechanical polishing solution according to claim 1, wherein the silica abrasive particles have a mass concentration of 0.05 to 1 wt%.
12. The chemical mechanical polishing solution of claim 1, wherein the complexing agent is one or more of glycine, alanine, valine, leucine, proline, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, asparagine, glutamine, nitrilotriacetic acid, ethylenediaminetetraacetic acid, cyclohexanediaminetetraacetic acid, ethylenediaminedisuccinic acid, diethylenetriaminepentaacetic acid, and triethylenetetraminehexaacetic acid.
13. The chemical mechanical polishing solution according to claim 1, wherein the complexing agent has a mass concentration of 0.1 to 3 wt%.
14. The chemical mechanical polishing solution according to claim 1, wherein the corrosion inhibitor is an azole compound having no benzene ring.
15. The chemical mechanical polishing solution according to claim 14, wherein the azole compound not containing a benzene ring is one or more of 1,2, 4-triazole, 3-amino-1, 2, 4-triazole, 4-amino-1, 2, 4-triazole, 3, 5-diamino-1, 2, 4-triazole, 5-carboxy-3-amino-1, 2, 4-triazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazole, and 5-amino-1H-tetrazole.
16. The chemical mechanical polishing solution according to claim 1, wherein the corrosion inhibitor is present in a mass concentration of 0.001 to 0.5 wt%.
17. The chemical mechanical polishing solution of claim 1, wherein the oxidizing agent is hydrogen peroxide.
18. The chemical mechanical polishing solution according to claim 1, wherein the oxidizing agent has a mass concentration of 0.05 to 3 wt%.
19. The chemical mechanical polishing solution according to claim 1 to 18, wherein the pH of the chemical mechanical polishing solution is 5 to 8.
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