CN102816533B - A kind of cmp method for phase-change material - Google Patents
A kind of cmp method for phase-change material Download PDFInfo
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- CN102816533B CN102816533B CN201110153100.4A CN201110153100A CN102816533B CN 102816533 B CN102816533 B CN 102816533B CN 201110153100 A CN201110153100 A CN 201110153100A CN 102816533 B CN102816533 B CN 102816533B
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Abstract
The invention provides a kind of cmp method for phase-change material, chemical mechanical polishing liquid comprises oxidant containing single persulfide complex salt and abrasive material; The base material of phase-change material is contained with polishing fluid polishing.The chemical mechanical polishing liquid composition for phase-change material in the present invention is simple, preparation easily, and in phase-change material polishing process, while guaranteeing phase-change material polishing effect, greatly accelerate the polishing speed for phase-change materials such as GST, improve the polishing efficiency of phase-change material, improve the production capacity of chip, and reduce consumption, reduce production cost, meet that industry is a large amount of, the demand of two-forty polishing phase-change material.
Description
Technical field
The present invention relates to a kind of cmp method, be particularly useful for the cmp method of phase-change material.
Background technology
In Jiu Yue, 1966 Ao Fuxinsiji (StanfordOvshinsky) have submitted first patent about the phase transition storage (Phasechangememory, be called for short PCM) based on GST alloy.Afterwards in nineteen sixty-eight, Ao Fuxinsiji (StanfordOvshinsky) has delivered again first section about the paper of noncrystal phase transformation, has founded non-crystalline semiconductor.Phase-change material is in data storage procedure, it becomes crystal by non-crystal state, become again in non-crystal process again, its noncrystal and crystal state presents different light-reflecting property and resistance characteristic, amorphous state and crystalline state therefore can be utilized to represent " 0 " respectively and " 1 " stores data.
Phase Change Access Memory (PRAM), also referred to as ovonic memory, uses and can carry out the phase-change material (PCM) that TURP changes between the noncrystalline state of insulation and the crystal state of conduction and apply for electronic memory.PCM reversibly can change physical state according to heat/cool rates, temperature and time.Storage information in PRAM is kept at by the conduction property least disadvantage of different physical state.
PRAM has the advantage of the conventional integrated dynamic random access memory of height (DRAM), static RAM (SRAM) and non-volatile specification fast-flash memory body image hard disc (NAND) flash memory, and has excellent compatibility with the integrated technique of complementary metal oxide semiconductors (CMOS) (C-MOS) field-effect transistor (FETs) of routine.Based on these advantages, PRAM has attracted increasing concern owing to having the maximum likelihood of successful commercialization.And have the PCM material of application prospect to be GST (germanium, antimony and tellurium) alloy most at present, such as Ge
2sb
2te
5.GST alloy still can keep excellent information storage capability under the state of extremely low dimension (about 5 nanometer), so the memory device adopting Ge-Sb-Te alloy to make has very high information storage density.Phase change random access memory devices is considered to the memory of new generation having competitiveness.
In the actual course of processing of chip, can by GST (Ge
2sb
2te
5) by after chemical vapour deposition (CVD) to silicon chip surface, planarization is carried out to silicon chip surface.In current substrate surface planarization, chemico-mechanical polishing (CMP) technology is considered to the most effective method of current global planarizartion.
Chemico-mechanical polishing (CMP) is combined into by chemical action, mechanism and this two kinds of effects.It is usually by a grinding table with polishing pad, and a grinding head for carries chips forms.Wherein grinding head fixes chip, is then pressed on polishing pad in the front of chip.When carrying out chemico-mechanical polishing, grinding head moves at polishing pad Linear or rotates along the direction of motion the same with grinding table.Meanwhile, the slurry containing grinding agent is dripped on polishing pad, and is laid on polishing pad because of centrifugal action.Chip surface realizes global planarizartion under machinery and chemical double action.The main mechanism of metal level chemico-mechanical polishing (CMP) is considered to: oxidant is first by oxidation on metal surface complexing, this layer of oxide-film machinery is removed by the grinding agent being representative with silicon dioxide and aluminium oxide, producing new metal surface continues oxidized, and these two kinds effects are worked in coordination with and carried out.
But, different from the metal level be made up of as copper (Cu) or tungsten (W) single-element of routine, the layer of polished phase-change memory device is made up of the advanced material of the special elements containing special ratios, as sulphur (S), selenium (Se), germanium (Ge), antimony (Sb), tellurium (Te), silver (Ag), indium (In), tin (Sn), gallium (Ga) etc., thus carry out reversible transition between crystalline state and amorphous state.And the hardness of phase-change material is lower, adopt common chemical mechanical polishing liquid for the polishing effect of GST material and bad, cut can be occurred on the surface of phase-change material.On the other hand, some chemical mechanical polishing slurries evenly can not remove all components of phase-change material, and after causing polishing, phase-change material residue and residual is stayed on the dielectric layer, and in the subsequent step of device manufacture, cause further problem.
There is a series of research being directed to GST chemical mechanical polishing slurry in the market, carry out GST polishing as US Patent No. 7897061B2, US20070178700A1 use oxidant (such as: hydrogen peroxide) to add the complexing agents such as oxalic acid, malonic acid, butanedioic acid, citric acid.US20100190339A1 use oxidant adds lysine and carries out GST polishing.US7678605B2, US20090057834A1 oxidant adds corrosion inhibitor (derivative of asparatate) and carries out GST polishing.US20090001339A1 triethylamine, quaternary ammonium salt oxidizer reduce the metal attack (erosion) in GST polishing process.US20100112906A1 quaternary ammonium base carries out GST polishing.And for example Chinese patent CN101370897A provide a kind of take hydrogen peroxide as oxidant, organic acid mixes as chelating agent the chemical mechanical polishing liquid that abrasive grains is main component; Chinese patent CN101333420A provides the chemical mechanical polishing slurry of a kind of nitrogen-containing compound, abrasive grains, oxidant or abrasive grains and oxidant; Chinese patent CN101765647A provides a kind of composition comprising particulate abrasive material and lysine oxidant; Chinese patent CN101333421A paste compound for chemico-mechanical polishing and with deionized water and iron or iron compound for main component, removing abrasive grains, thus improve the profile pattern for GST material.
Above-mentioned patent all proposes new polishing fluid scheme for the polishing of GST material, to improve the polishing effect for GST material, but we find, main in existing technology is main oxidant with hydrogen peroxide, and existing oxidant is lower for the polishing speed of GST material, wherein in above-mentioned patent, the polishing fluid that Chinese patent CN101333420A provides is the highest for GST material finish speed, but also on average also only reach 2000 A/min of clocks, the polishing efficiency of GST cannot meet existing demand.
Summary of the invention
The invention provides a kind of cmp method for phase-change material, to solve the problem for above-mentioned existing phase-change material polishing technology deficiency.Finishing method of the present invention, while maintenance phase-change material polishing effect, improves the polishing speed of phase-change material greatly.
The cmp method that the present invention is used for phase-change material is achieved through the following technical solutions its object:
A kind of chemical mechanical polishing liquid containing abrasive material, oxidant is provided; Wherein, described oxidant comprises the complex salt of monopersulfate salt;
Above-mentioned chemical mechanical polishing liquid is adopted to carry out chemico-mechanical polishing to the base material containing phase-change material on grinding table.
In described CMP (Chemical Mechanical Polishing) process, grinding pressure preferably controls in 3 ~ 5psi scope; Grinding table rotating speed preferably control 60 ~ 120 revs/min, grinding head rotation rotating speed preferably controls 80 ~ 200 revs/min of scopes; Described chemical mechanical polishing liquid rate of addition controls 80 ~ 200ml/ minute scope.
Cmp method for phase-change material of the present invention, the complex salt of monopersulfate salt comprises the composition of monopersulfate salt, disulfate and sulfate composition, and described salt can be sylvite, sodium salt, ammonium salt etc.
Cmp method for phase-change material of the present invention, wherein, the mol ratio of described monopersulfate salt, disulfate and sulfate is preferably 2 ~ 5: 1 ~ 3: 1 ~ 4.
Cmp method for phase-change material of the present invention, wherein, the mol ratio of described monopersulfate salt, disulfate and sulfate more preferably 2 ~ 3: 1 ~ 2: 1 ~ 2.The composition of most preferred monopersulfate salt, disulfate and sulfate composition is 2KHSO
5kHSO
4k
2sO
4.
Cmp method for phase-change material of the present invention, wherein, the mass percent that the composition that described monopersulfate salt, disulfate and sulfate form accounts for described chemical mechanical polishing liquid is 0.1 ~ 10wt%.
Cmp method for phase-change material of the present invention, wherein, the mass percent that the composition that described monopersulfate salt, disulfate and sulfate form accounts for described chemical mechanical polishing liquid is 1 ~ 5wt%.
Cmp method for phase-change material of the present invention, wherein, described abrasive material can be one or more grinding agents in silicon dioxide, aluminium oxide, cerium oxide, iron oxide, silicon nitride and titanium oxide.
Cmp method for phase-change material of the present invention, wherein, the mass percent that described grinding agent accounts for described chemical mechanical polishing liquid is 0.1 ~ 20wt%.
According to a kind of preferred implementation of the cmp method for phase-change material of the present invention, wherein, described chemical mechanical polishing liquid adopts pH value regulator that the pH value of chemical mechanical polishing liquid is adjusted to 0.5 ~ 4.
The advantage adopting the present invention to be used for the cmp method of phase-change material is:
The chemical mechanical polishing liquid composition for phase-change material in the present invention is simple, and preparation easily.And unexpectedly, the complex salt of monopersulfate salt is replaced peroxide and is used as in oxidant polishing phase-change material process by the present invention, while guaranteeing phase-change material polishing effect, greatly accelerate the polishing speed for phase-change materials such as GST, improve the polishing efficiency of phase-change material, improve the production capacity of chip, and reduce consumption, reduce production cost, meet that industry is a large amount of, the demand of two-forty polishing phase-change material.
Embodiment
Below by specific embodiment, polishing effect of the present invention is described, but protection scope of the present invention is not limited to the following examples:
According to the component in each embodiment, content ratio preparation chemical mechanical polishing liquid, and mix in deionized water, insufficient section is not enough with deionized water, and adopts nitric acid or sulfuric acid adjust pH, can obtain chemical mechanical polishing liquid:
Embodiment 1:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 5wt%;
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 1wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5;
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 4psi, grinding table rotating speed 90 revs/min, grinding head rotation rotating speed 140 revs/min, polishing fluid rate of addition 140ml/ minute.
Embodiment 2:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 5wt%;
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 2wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 3:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 5wt%;
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 0.1wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 4:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 5wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 10wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5;
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 3psi, grinding table rotating speed 60 revs/min, grinding head rotation rotating speed 80 revs/min, polishing fluid rate of addition 80ml/ minute.
Embodiment 5:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 5wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 5wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 0.5;
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 5psi, grinding table rotating speed 120 revs/min, grinding head rotation rotating speed 200 revs/min, polishing fluid rate of addition 200ml/ minute.
Embodiment 6:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 20wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 1wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 4;
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 7:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 0.1wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 2wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 8:
Aluminium oxide selected by grinding agent, and it accounts for polishing fluid mass content is 5wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 2wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 9:
Cerium oxide selected by grinding agent, and it accounts for polishing fluid mass content is 3wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 2wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5;
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 10:
Iron oxide selected by grinding agent; It accounts for polishing fluid mass content is 5wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 2wt%
Polishing fluid pH value: 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 11:
Silicon nitride selected by grinding agent, and its content is 7wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 2wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 12:
Titanium oxide selected by grinding agent, and it accounts for polishing fluid mass content is 10wt%
2KHSO selected by oxidant
5kHSO
4k
2sO
4, it accounts for polishing fluid mass content is 2wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 13:
Silicon dioxide selected by grinding agent, and it accounts for polishing fluid mass content is 5wt%;
4KHSO selected by oxidant
53KHSO
42K
2sO
4; It accounts for polishing fluid mass content is 1wt%;
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 14:
Silicon dioxide selected by grinding agent; It accounts for polishing fluid mass content is 5wt%
5KHSO selected by oxidant
54KHSO
44K
2sO
4; It accounts for polishing fluid mass content is 0.1wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 15:
Silicon dioxide selected by grinding agent; It accounts for polishing fluid mass content is 20wt%
3KHSO selected by oxidant
52KHSO
42K
2sO
4; It accounts for polishing fluid mass content is 1wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 4
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 16:
Silicon dioxide selected by grinding agent; It accounts for polishing fluid mass content is 0.1wt%
6KHSO selected by oxidant
53KHSO
44K
2sO
4; It accounts for polishing fluid mass content is 2wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 17:
Aluminium oxide selected by grinding agent; It accounts for polishing fluid mass content is 5wt%
4KHSO selected by oxidant
52KHSO
43K
2sO
4; It accounts for polishing fluid mass content is 2wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 18:
Iron oxide selected by grinding agent; It accounts for polishing fluid mass content is 5wt%
4KHSO selected by oxidant
53KHSO
42K
2sO
4; It accounts for polishing fluid mass content is 2wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 19:
Silicon dioxide selected by grinding agent; It accounts for polishing fluid mass content is 7wt%
5KHSO selected by oxidant
53KHSO
44K
2sO
4; It accounts for polishing fluid mass content is 2wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Embodiment 20:
Titanium oxide selected by grinding agent; It accounts for polishing fluid mass content is 10wt%
Oxidant: 3KHSO
52KHSO
42K
2sO
4; It accounts for polishing fluid mass content is 2wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Finishing method is with reference to method operation described in embodiment 1.
Comparative example 1:
Silicon dioxide selected by grinding agent; It accounts for polishing fluid mass content is 5wt%
Hydrogen peroxide selected by oxidant, and it accounts for polishing fluid mass content is 1wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Except oxidant difference, all the other components are identical with embodiment 1 with proportioning, and finishing method is with reference to method operation described in embodiment 1.
Comparative example 2:
Silicon dioxide selected by grinding agent; It accounts for polishing fluid mass content is 5wt%
Hydrogen peroxide selected by oxidant; It accounts for polishing fluid mass content is 2wt%
Add the art such as surfactant, complexing agent usual component as required;
Polishing fluid pH value is adjusted to 1.5
Except oxidant difference, all the other components are identical with embodiment 2 with proportioning, and finishing method is with reference to method operation described in embodiment 1.
Embodiment, comparative example implementation result:
Table 1 embodiment and comparative example polishing effect
| GST polishing velocity (A/min) | |
| Comparative example 1 | 1040 |
| Comparative example 2 | 1800 |
| Embodiment 1 | 5800 |
| Embodiment 2 | 9400 |
| Embodiment 3 | 4000 |
| Embodiment 4 | 13000 |
| Embodiment 5 | 15300 |
| Embodiment 6 | 12000 |
| Embodiment 7 | 7500 |
| Embodiment 8 | 9540 |
| Embodiment 9 | 10800 |
| Embodiment 10 | 8650 |
| Embodiment 11 | 10600 |
| Embodiment 12 | 13400 |
| Embodiment 13 | 11700 |
| Embodiment 14 | 9730 |
| Embodiment 15 | 6580 |
| Embodiment 16 | 7630 |
| Embodiment 17 | 10500 |
| Embodiment 18 | 8700 |
| Embodiment 19 | 9070 |
| Embodiment 20 | 9560 |
As can be seen from upper table 1:
The embodiment of the present invention 1 is compared with comparative example 1, and when oxidant concentration is 1%, the present invention adopts hydrogen persulfate salt composite to be oxidant, and GST polishing velocity is approximately that comparative example adopts hydrogen peroxide to be 5 times of oxidant polishing speed.
Embodiment 2 is compared with comparative example 2: when oxidant concentration is all 2%, and the present invention adopts hydrogen persulfate salt composite to be oxidant, and GST polishing velocity is approximately also that comparative example adopts hydrogen peroxide to be 5 times of oxidant polishing speed.
Other embodiment also has the difference of very large polishing effect compared with comparative example, and therefrom we can sum up, and when adopting monopersulfate salt to be oxidant, GST polishing velocity is far longer than the GST polishing velocity adopting hydrogen peroxide as oxidant.
To sum up, although monopersulfate salt is known oxygen agent, but in other materials process of polishing, compared with peroxide and there are no the difference of obviously polishing speed, and persulfide is oxidant polishing phase-change material by the present invention, unexpected discovery, compared to peroxide, GST cmp method of the present invention obtains the polishing speed significantly improved.
Should be understood that, NM method of operation, reagent and instrument in the above embodiment of the present invention, should be understood to adopt the technical field of the invention conventional means to implement.
Be described in detail specific embodiments of the invention above, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and substituting also all among category of the present invention.Therefore, equalization conversion done without departing from the spirit and scope of the invention and amendment, all should contain within the scope of the invention.
Claims (12)
1., for a cmp method for phase-change material, it is characterized in that:
A kind of chemical mechanical polishing liquid containing abrasive material, oxidant is provided; Wherein, described oxidant comprises the complex salt of monopersulfate salt;
Above-mentioned chemical mechanical polishing liquid is adopted to carry out chemico-mechanical polishing to the base material containing phase-change material on grinding table, wherein: the complex salt of described monopersulfate salt comprises the composition of monopersulfate salt, disulfate and sulfate composition, and the mol ratio of described monopersulfate salt, disulfate and sulfate is 2 ~ 5:1 ~ 3:1 ~ 4, and the mass percent that the composition of described monopersulfate salt, disulfate and sulfate composition accounts for described chemical mechanical polishing liquid is 0.1 ~ 10wt%.
2. finishing method as claimed in claim 1, is characterized in that: described salt is sylvite, sodium salt or ammonium salt.
3. finishing method as claimed in claim 1, is characterized in that: mol ratio 2 ~ 3:1 ~ 2:1 ~ 2 of described monopersulfate salt, disulfate and sulfate.
4. finishing method as claimed in claim 3, is characterized in that: the mol ratio 2:1:1 of described monopersulfate salt, disulfate and sulfate.
5. finishing method as claimed in claim 1, is characterized in that: described complex salt comprises the composition of Potassium Monopersulfate, potassium acid sulfate and potassium sulfate composition.
6. finishing method as claimed in claim 1, is characterized in that: the mass percent that the composition that described monopersulfate salt, disulfate and sulfate form accounts for described chemical mechanical polishing liquid is 1 ~ 5wt%.
7. finishing method as claimed in claim 1, is characterized in that: described abrasive material is one or more in silicon dioxide, aluminium oxide, cerium oxide, iron oxide, silicon nitride and titanium oxide.
8. finishing method as claimed in claim 1, is characterized in that: the mass percent that described abrasive material accounts for described chemical mechanical polishing liquid is 0.1 ~ 20wt%.
9. finishing method as claimed in claim 1, is characterized in that: described chemical mechanical polishing liquid adopts pH value regulator that the pH value of chemical mechanical polishing liquid is adjusted to 0.5 ~ 4.
10. the finishing method as described in above-mentioned any one claim, is characterized in that: in described polishing process, and grinding pressure is 3 ~ 5psi.
11. finishing methods as claimed in claim 10, it is characterized in that: in described polishing process, grinding table rotating speed is 60 ~ 120 revs/min, and grinding head rotation rotating speed is 80 ~ 200 revs/min.
12. finishing methods as claimed in claim 11, is characterized in that: in described polishing process, the rate of addition of described chemical mechanical polishing liquid is 80 ~ 200ml/ minute.
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