CN101333420B - Chemical mechanical polishing slurry composition and polishing method - Google Patents
Chemical mechanical polishing slurry composition and polishing method Download PDFInfo
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- CN101333420B CN101333420B CN2008100855678A CN200810085567A CN101333420B CN 101333420 B CN101333420 B CN 101333420B CN 2008100855678 A CN2008100855678 A CN 2008100855678A CN 200810085567 A CN200810085567 A CN 200810085567A CN 101333420 B CN101333420 B CN 101333420B
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- 238000005498 polishing Methods 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000000203 mixture Substances 0.000 title abstract description 28
- 239000002002 slurry Substances 0.000 title abstract description 14
- 239000000126 substance Substances 0.000 title abstract 2
- -1 nitrogenous compound Chemical class 0.000 claims abstract description 45
- 239000007800 oxidant agent Substances 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims description 161
- 239000012782 phase change material Substances 0.000 claims description 65
- 230000001590 oxidative effect Effects 0.000 claims description 38
- 239000006061 abrasive grain Substances 0.000 claims description 29
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 18
- 150000001412 amines Chemical class 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910052742 iron Inorganic materials 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 10
- 150000002978 peroxides Chemical class 0.000 claims description 9
- 150000003839 salts Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 150000003863 ammonium salts Chemical class 0.000 claims description 8
- 150000004770 chalcogenides Chemical class 0.000 claims description 7
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 230000003750 conditioning effect Effects 0.000 claims description 6
- 150000002506 iron compounds Chemical class 0.000 claims description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 150000003512 tertiary amines Chemical class 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000013522 chelant Substances 0.000 claims description 4
- GLUUGHFHXGJENI-UHFFFAOYSA-N diethylenediamine Natural products C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 4
- 229920001059 synthetic polymer Polymers 0.000 claims description 4
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000763 AgInSbTe Inorganic materials 0.000 claims description 3
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 3
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 3
- 229910005537 GaSeTe Inorganic materials 0.000 claims description 3
- 229910005872 GeSb Inorganic materials 0.000 claims description 3
- 229910005898 GeSn Inorganic materials 0.000 claims description 3
- 229910005900 GeTe Inorganic materials 0.000 claims description 3
- 229910018321 SbTe Inorganic materials 0.000 claims description 3
- 229910018219 SeTe Inorganic materials 0.000 claims description 3
- 229910006913 SnSb Inorganic materials 0.000 claims description 3
- 229910004284 Te81Ge15Sb2S2 Inorganic materials 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 150000004982 aromatic amines Chemical class 0.000 claims description 3
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- 229940078916 carbamide peroxide Drugs 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 3
- FESBVLZDDCQLFY-UHFFFAOYSA-N sete Chemical compound [Te]=[Se] FESBVLZDDCQLFY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- 230000036961 partial effect Effects 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 14
- 230000015654 memory Effects 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000002391 heterocyclic compounds Chemical class 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 229910002012 Aerosil® Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 2
- 150000003973 alkyl amines Chemical class 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 125000005270 trialkylamine group Chemical group 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000007476 Maximum Likelihood Methods 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.
Description
The cross reference of related application
The priority of the priority of the korean patent application No.10-2007-0065872 that this non-provisional application requires to submit on June 29th, 2007 and the korean patent application No.10-2007-0065874 that submits on June 29th, 2007, and be incorporated herein by reference in full at this.
Technical field
The present invention relates to a kind of paste compound, this paste compound is used in the semiconductor fabrication process phase-change memory device being polished.More particularly, the present invention relates to a kind of paste compound that the contained metal alloy of phase-change memory device or chalcogenide are carried out chemico-mechanical polishing (CMP) of being used for, and a kind of method of using this paste compound that phase-change memory device is polished.
Background technology
Along with the expansion of the world market of the electronic equipment that comprises digital camera, video camera, MP3 player, digital broadcast receiver in multimedia, navigation system and mobile phone, the demand of semiconductor memory is also increased constantly.In addition, the demand to the high capacity memory of comparing the performance characteristic with the high speed of service and low-energy-consumption with traditional memory also increases constantly.Under such background, carried out a large amount of research, have the memory of future generation of the advantage and the characteristic of dynamic random access memory (DRAMs), static random access memory (SRAMs) and flash memory with exploitation.Phase change random access memory devices (PRAMs), magnetic RAM (MRAMs), ferroelectric RAM (FeRAMs) and polymer memory are considered to memory of future generation usually.In these memories; PRAMs has the advantage of conventional height integrated DRAM s, high-speed SRAM s and non-volatile nand flash memory, and with the integrated technique of complementary metal oxide semiconductors (CMOS) (C-MOS) field-effect transistor (FETs) of routine excellent compatibility is arranged.Based on these advantages, PRAMs has attracted increasing concern owing to having successfully business-like maximum likelihood.
After calendar year 2001 S.Lai (Intel) and T.Lowrey (Ovonyx) published thesis in international electronic equipment meeting (IEDM), people had carried out extensive studies and exploitation to phase transformation RAMs (PRAMs).Phase transformation RAMs is a nonvolatile memory, and it has utilized material can cause the ability of the alternate reversible transition of crystal (low resistance) and amorphous body (high resistance) two owing to the Joule heat that the curtage response that applies is produced, thus the data of writing.
Metal alloy and chalcogenide are used as the typical phase-change material of PRAMs at present.Especially, has Ge
xSb
yTe
z(GST) chalcogenide of forming is studied.
In the CMP technology of the phase-change material of developing at present that is used for PRAM equipment, silica (SiO
2) be used to form polish stop (polish stop layer).When the wafer that figure is arranged is polished; The uniformity of polishing and surface blemish (as; Surface depression and corrode) receive the very big influence of some method factor; For example, to polishing and etch-rate, the polishing uniformity of silicon oxide film and the polishing selectivity between phase-change material and the silicon oxide film of phase-change material.
On the other hand, be used for the slurry that aluminium, copper, tungsten and other metal wire rod polish mainly is used in semiconductor fabrication.Different with the phase-change material of PRAM equipment, owing to these metal layer material are made up of single-element, thereby can not undergo phase transition.Therefore, conventional metal material can not be used for PRAMs equipment, and makes the huge difference of generation between layer character.
Through selection to oxidant, grinding-material and other useful additive; Can adjust and be used for CMP slurry that metal wire rod is polished; Thereby in the polishing velocity polished metal surface with needs effectively, surface blemish, defective, corrosion and erosion are minimized.In addition, this polishing slurries can be used to control the polishing selectivity to other thin-film material, like titanium, titanium nitride, tantalum, tantalum nitride, tantalum oxide etc.
Different with the metal level of forming by single-element such as copper (Cu) or tungsten (W) of routine; The layer of polished phase-change memory device is made up of the advanced material of the special elements that contains special ratios; Like sulphur (S), selenium (Se), germanium (Ge), antimony (Sb), tellurium (Te), silver (Ag), indium (In), tin (Sn), gallium (Ga) etc., thereby between crystalline state and amorphous state, carry out reversible transition.Because polished properties of materials is different with the common metal layer material, so need the polishing composition of development of new strongly.
The paste compound that the desirable phase-change material that is used for phase transition storage (PRAMs) polishes should satisfy following requirement: i) must carry out etching and polishing to phase-change material apace; Ii) must between phase-change material and polish stop, have high polishing selectivity; Must make iii) that depression, erosion, figure are inhomogeneous, flaw (like cut, defective and corrosion) etc. reaches and minimizes; Iv) must be able to not change the composition and the state of element in the surface of phase-change material after the polishing.
Summary of the invention
The invention provides a kind of paste compound and a kind of method of using this CMP paste compound that phase-change memory device is polished that is used for phase-change memory device is carried out chemico-mechanical polishing (CMP); Said composition can be polished phase-change memory device apace; Can between phase-change storage material and polish stop (like silicon oxide film), reach high polishing selectivity; Can make minimizing of processing flaw (like depression and erosion), thereby high-quality polished surface is provided.
The present invention also provides a kind of paste compound and a kind of method of using this CMP paste compound that phase-change memory device is polished that is used for phase-change memory device is carried out chemico-mechanical polishing; Said composition can cause the variation of phase-change material on composition or state hardly before and after the polishing; Can make minimizing of surface blemish (like cut, defective, corrosion and polishing residue); Thereby clean polished surface is provided; And said composition only contains the metal impurities of very small amount, thereby after processing, seldom or not can cause problem of environmental pollution.
According to an aspect of the present invention; The invention provides a kind of paste compound that is used for phase-change memory device is carried out chemico-mechanical polishing (CMP); This paste compound contains deionized water, nitrogen-containing compound and one or more add component, and this interpolation component can be wanted the CMP characteristic that obtains for said paste compound provides; For example, the combination of abrasive grains, oxidant or abrasive grains and oxidant.
Said phase-change memory device can comprise metal alloy or chalcogenide.
Said phase-change memory device can comprise at least a InSe of being selected from, Sb
2Te
3, GeTe, Ge
2Sb
2Te
5, InSbTe, GaSeTe, SnSb
2Te
4, InSbGe, AgInSbTe, (GeSn) SbTe, GeSb (SeTe) and Te
81Ge
15Sb
2S
2In compound.
Said nitrogen-containing compound can comprise at least a compound that is selected from fatty amine, aromatic amine, ammonium salt and the ammonium alkali.
Said fatty amine can be primary amine, secondary amine or tertiary amine.
Said fatty amine can have at least one alkyl or alcohol radical.
Said fatty amine can have at least one substituting group that contains 1-7 carbon atom.
Said fatty amine can comprise heterocyclic compound.
Said heterocyclic compound can comprise diethylenediamine compound.
Said ammonium salt or ammonium alkali can comprise at least a compound that is selected from the salt of TMAH, tetraethyl ammonium hydroxide, TPAOH and they deriving.
Total weight with paste compound is a benchmark, and the content of said nitrogen-containing compound in paste compound of the present invention can be about 0.001-5 weight %.
The present invention about an execution mode in this respect in, said paste compound can contain abrasive grains.Said abrasive grains can comprise: be selected from by silica (SiO
2), aluminium oxide (Al
2O
3), cerium oxide (CeO
2) and zirconia (ZrO
2) the particle of at least a metal oxide in the group formed, or synthetic polymer particle.
The primary granule average diameter of said abrasive grains can be about 1-200nm, and average specific surface area can be about 10-500m
2/ g.
Total weight with paste compound is a benchmark, and the content of said abrasive grains in paste compound of the present invention can be about 0.01-30 weight %.
The present invention about another execution mode in this respect in, said CMP paste compound can contain oxidant.
Said oxidant has the standard electric chemistry redox current potential higher than polished phase-change material.
Said oxidant can comprise peroxide (per-compound) or iron compound.
Said peroxide can be for having one or more peroxy-radicals (compound O-O-), or contain the compound of the element that is in its highest oxidation state.
Saidly contain one or more peroxy-radicals (compound O-O-) can comprise at least a being selected from by hydrogen peroxide, carbamide peroxide (urea hydrogen peroxide), percarbonate, benzoyl peroxide, Peracetic acid, di-tert-butyl peroxide, permonosulphuric acid (monopersulfate, SO
5), peroxy-disulfuric acid (dipersulfate, S
2O
8) and the group formed of their salt of deriving in compound.
The said compound that contains the element that is in its highest oxidation state can comprise at least a compound that is selected from the salt of being derived by periodic acid, hyperbromic acid, perchloric acid, high boric acid, permanganic acid and they.
Said iron compound can be included in the compound that contains iron in the molecular structure.
In an illustrative embodiments of the present invention, said oxidant can comprise at least a compound that is selected from hydrogen peroxide, permonosulphuric acid, peroxy-disulfuric acid, iron ion compound and the iron chelate.
Total weight with paste compound is a benchmark, and the content of said oxidant in paste compound of the present invention can be about 0.01-10 weight %.
The present invention about another execution mode in this respect in, said CMP paste compound can comprise abrasive grains and oxidant.
The pH value of said paste compound can be about 2-10.
Said CMP paste compound can further contain the pH conditioning agent.
Said pH conditioning agent can comprise be selected from nitric acid, phosphoric acid, sulfuric acid, hydrochloric acid and pKa be 6 or lower organic carboxyl acid at least a acid.
According to a further aspect in the invention, the invention provides the method that the said CMP paste compound of a kind of usefulness polishes phase-change memory device.
The manufacture method of phase-change memory device can comprise; Insulating material is applied to forms insulating barrier on the semiconductor wafer; Make the insulating barrier complanation, on the insulating barrier of this complanation, form figure, and on the insulating barrier that forms figure, use phase-change material to form phase-change material layers.Said CMP paste compound is contacted with said phase-change material layers, thereby said phase-change material layers is polished, up to exposing said insulating barrier.
The method that phase-change material is polished comprises; The paste compound that will be used for chemico-mechanical polishing is applied to the polishing pad of rotation; Under preset pressure condition, said polishing pad is contacted with said phase-change material layers, utilize frictional force to make a part of said phase-change material layers polished.
According to a further aspect of the invention, the invention provides a kind of through said finishing method and polished phase-change memory device.
Embodiment
Below will through a part but and not all embodiments, the present invention is more fully described.In fact, the present invention can implement with a lot of different modes, and should not be limited to the execution mode of enumerating here, and the proposition of these execution modes is in order to make the disclosure satisfy suitable legal requiremnt.
The invention provides a kind of chemico-mechanical polishing (CMP) paste compound that phase-change memory device is polished of being used for; Said composition contains deionized water and nitrogen-containing compound; And optionally contain one or more and add component; This interpolation component can be carried for said paste compound and want the CMP characteristic that obtains, for example, and the combination of abrasive grains, oxidant or abrasive grains and oxidant.Therefore, in the exemplary execution mode of the present invention, said CMP paste compound can contain deionized water and nitrogen-containing compound.In other exemplary execution mode of the present invention, said CMP paste compound can contain deionized water, nitrogen-containing compound and abrasive grains.In other exemplary execution mode of the present invention, said CMP paste compound can contain deionized water, nitrogen-containing compound and oxidant.In another exemplary execution mode of the present invention, said CMP paste compound can contain deionized water, nitrogen-containing compound, abrasive grains and oxidant.
Said phase-change memory device contains metal alloy or chalcogenide usually as the phase-change material that between crystalline state and amorphous state, carries out reversible transition.
The example that is applicable to phase-change material of the present invention includes but not limited to: binary compound, and like InSe, Sb
2Te
3And GeTe; Ternary compound is like Ge
2Sb
2Te
5, InSbTe, GaSeTe, SnSb
2Te
4And InSbGe; And quaternary compound, like AgInSbTe, (GeSn) SbTe, GeSb (SeTe) and Te
81Ge
15Sb
2S
2
Said nitrogen-containing compound is for can all even material that through the CMP process phase-change material is polished effectively apace, and this compound has the erosion that minimizing takes place at patterned surface and the ability of depression.Said nitrogen-containing compound can be fatty amine, aromatic amine, ammonium salt or ammonium alkali or their combination.Said nitrogen-containing compound can be the compound that can mix with water.
Said fatty amine can be primary amine, secondary amine or tertiary amine.Also can mix the fatty amine that uses two or more.
Said fatty amine can not be substituted or be substituted, and in an exemplary execution mode, said fatty amine can have at least one alkyl or alcohol radical.According to the polishing speed of phase-change material, can use alkyl.Said fatty amine can have at least one substituting group that contains 1-7 carbon atom.
Said fatty amine can be heterocyclic compound, like piperazine.Also can be used in combination two or more fatty amine.
Kind to ammonium salt or ammonium alkali has no particular limits, and is selected from least a in compound and their combination in the salt of TMAH, tetraethyl ammonium hydroxide, TPAOH and they deriving and can be used as ammonium salt or ammonium alkali.
Total weight with paste compound is a benchmark, and the content of said nitrogen-containing compound in paste compound of the present invention can be about 0.001-5 weight %, and for example about 0.005-3 weight % is 0.01-1 weight % in another example.Can consider nitrogen-containing compound to the uniform polishing speed of the spread effect of the polishing of phase-change material, phase-change material, the keeping of the surface characteristic of hoping to obtain and best pH, confirm the consumption of said nitrogen-containing compound.
Said abrasive grains can be for being selected from by silica (SiO
2), aluminium oxide (Al
2O
3), cerium oxide (CeO
2) and zirconia (ZrO
2) wait at least a metal oxide particle in the group of composition, maybe can be synthetic polymer particle, or their combination.
Can come suitably to select any known polymer beads as said synthetic polymer particle according to the kind of polished equipment.For example, this polymer beads comprise the abrasive grains only formed by polymer, by abrasive grains of being formed by the metal oxide of polymer overmold and the abrasive grains formed by the polymer that is coated by metal oxide.
The primary granule average diameter of institute's abrasive grains can be about 1-200nm, and average specific surface area can be about 10-500m
2/ g.In exemplary execution mode of the present invention, for definite dispersion stabilization and polishing performance is provided, the primary granule average diameter of said abrasive grains is about 5-100nm, for example, and about 10-80nm; Average specific surface area is about 30-300m
2/ g, for example, about 40-250m
2/ g.
Total weight with paste compound is a benchmark, and the content of said abrasive grains in paste compound is about 0.01-30 weight %, and for example, about 0.05-20 weight % is about 0.1-10 weight % in another example.
Said oxidant can be oxidized to the superficial layer of phase-change material oxide or ion; To help removing scalping; And can polish the partial phase change material of removing in graph area equably; Up to exposing polish stop (like silicon oxide film), thereby play the effect that improves the patterned surface roughness.In addition, use oxidant to help to remove the residue that phase-change material exists in polish stop, thereby make polishing more even.
Can use various oxidants according to the present invention, as long as this oxidant has the standard electric chemistry redox current potential higher than polished phase-change material.For example, said oxidant can be peroxide or iron compound.Said oxidant can also be used in combination with one or more other oxidants.
Term used herein " peroxide " is meant and has one or more peroxy-radicals (compound O-O-), or contain the compound of the element that is in its highest oxidation state.The organic or inorganic peroxide can use in the present invention.
Saidly contain one or more peroxy-radicals (example of compound O-O-) includes but not limited to, hydrogen peroxide, carbamide peroxide, percarbonate, benzoyl peroxide, Peracetic acid, di-tert-butyl peroxide, permonosulphuric acid (SO
5), peroxy-disulfuric acid (S
2O
8) and their salt of deriving.
The said example that contains the compound of the element that is in its highest oxidation state includes but not limited to, the salt of deriving in periodic acid, hyperbromic acid, perchloric acid, high boric acid, permanganic acid and they.
Said iron compound can be for containing the compound of iron in molecular structure.
The nonrestrictive example that is applicable to oxidant of the present invention comprises hydrogen peroxide, permonosulphuric acid, peroxy-disulfuric acid, iron ion compound and iron chelate.According to definition used herein, the definition of hydrogen peroxide comprises the adduct that obtains through the preceding reaction of hydrogen peroxide and one or more other materials (for example, free radical generates catalyst).
Said hydrogen peroxide or its adduct can not cause environmental pollution, and in the surface state that helps cleaning phase-change material, and the composition of phase-change material is changed before and after polishing.Use permonosulphuric acid, peroxy-disulfuric acid, iron ion compound or iron chelate to be, phase-change material is polished with higher polishing rate as the advantage of oxidant.
Total weight with said paste compound is a benchmark, and the content of said oxidant in said paste compound can be about 0.01-10 weight %, and for example about 0.05-5 weight % is about 0.1-2 weight % in another example.The amount of the oxidant in these scopes helps making phase-change material to maintain optimum etching state.
The pH value of said paste compound can be adjusted into about 2-10, and for example, about 2-9 is about 2-5 in another example.Paste compound of the present invention can also comprise pH value conditioning agent, is adjusted in the scope of above-mentioned definition with the pH value with said paste compound.Said pH conditioning agent can comprise the inorganic acid that is selected from nitric acid, phosphoric acid, sulfuric acid and hydrochloric acid; Or pKa is 6 or lower organic carboxyl acid, and their combination.
The present invention also provides a kind of usefulness method that said CMP paste compound polishes phase-change memory device.
In exemplary execution mode of the present invention; The manufacture method of said phase-change memory device can comprise; Insulating material is applied to forms insulating barrier on the semiconductor wafer; Make the insulating barrier complanation, on the insulating barrier of this complanation, form figure, on the insulating barrier that forms figure, use phase-change material to form phase-change material layers.The CMP paste compound is contacted with phase-change material layers, thereby phase-change material layers is polished, up to exposing insulating barrier.
In exemplary execution mode of the present invention; The method that phase-change material layers is polished can comprise; The paste compound that will be used for chemico-mechanical polishing is applied to rotating polishing pad; Under preset pressure condition, said polishing pad is contacted with phase-change material layers, utilize frictional force to make a part of phase-change material layers polished.Said pressure condition can be included in the various conditions that allow usually in the CMP process.
The present invention also provides a kind of and has passed through said finishing method and polished phase-change memory device.
Below, will the present invention will be described in more detail through following embodiment.Yet the purpose of these embodiment just is used for explanation, is not to be used for limiting scope of the present invention.And following embodiment is used for explaining the exemplary CMP method with the phase-change material complanation.
Embodiment
[test that planless wafer (blanket wafer) is polished]
< embodiment 1-2 and Comparative Examples 1-2 >
Preparation has the slurry of composition as shown in table 1 below.Use the primary granule average diameter to be 200m as 15nm, specific area
2The aerosil particle of/g is as abrasive grains, is benchmark with the total weight of each paste compound, and the consumption of this particle is respectively 0.5 weight %.Aerosil uniform particles ground is scattered in the deionized water.In embodiment 1 and 2, use triethylamine (TEA) as nitrogen-containing compound, in embodiment 2 and Comparative Examples 2, use hydrogen peroxide as oxidant.Use nitric acid that the final pH value of all paste compounds is adjusted to 2.5.
Table 1
Under following polishing condition, after with each paste compound the planless wafer that contains phase-change material being polished respectively, test the polishing effect of each paste compound to phase-change material.The result is as shown in table 2.
Use consists of germanium (Ge): antimony (Sb): tellurium (Te) is 2: 2: 5 Ge
2Sb
2Te
5(GST) as phase-change material.With direct current magnetron sputtering process (D.C magnetron sputtering) sediment phase change material on planless wafer, form
thick layer.The PETEOS silicon oxide film thick with
be as polish stop, and with IC1000/SubaIVCMP pad (Rodel company) as polishing pad.With the MIRRA polishing machine of 200mm (by (the Applied Materials of Applied Materials; AMAT) make); Downward pressure be 1.5psi, flow rate of slurry be 200mL/min, bed speed (table speed) to be 100 rev/mins be under 100 rev/mins the condition with axle speed, this phase-change material was polished 1 minute.
Table 2
Can find out from table 2; The paste compound that contains nitrogen-containing compound among the embodiment 1 and 2; Compare with the paste compound in 2 with Comparative Examples 1, show high polishing speed, and greatly increased the selectivity of polishing speed between GST layer and silicon oxide film the GST layer.The oxidant of extra interpolation can not make the slurry (embodiment 2) that contains nitrogen-containing compound and oxidant simultaneously that the polishing speed of GST layer is further improved, but can reduce the polishing unevenness on the GST layer significantly.
Polish unevenness according to computes:
Unevenness (%)=(standard deviation of polishing speed/average polished speed) * 100 (%)
Begin from center wafer,, measure the polishing speed on whole surface with 49-point pole graph method (49-point polar map method).The low more explanation polishing of the numerical value of unevenness is carried out evenly more.
< embodiment 3-6 >
According to the method identical with embodiment 1, the preparation paste compound, difference is the kind and the content of the said nitrogen-containing compound of change as shown in table 3.According to fatty amine, promptly alkyl amine (trimethylamine, triethylamine and tripropyl amine (TPA)) is gone up the carbon number that substituted alkyl group is had, and the polishing performance (that is, polishing speed) of paste compound on the GST layer compared.Measure the polishing speed that uses each paste compound that the planless wafer that deposits phase-change material is polished respectively according to the method shown in embodiment 1.The result is as shown in table 3.
Table 3
Result from table 3 can find out, compares with 2 paste compound with Comparative Examples 1, and the paste compound of embodiment 3-6 has demonstrated the higher polishing speed to the GST layer.
Go up increase and the increase of trialkylamine content of the carbon number of substituted alkyl group along with fatty amine (that is, trialkylamine), said paste compound also increases the polishing speed of GST layer thereupon.
< embodiment 7-11 >
According to the method identical with embodiment 1, the paste compound that preparation is formed, difference is the kind and the content of the said nitrogen-containing compound of change as shown in table 4.According to the shape of nitrogen-containing compound, the polishing speed of paste compound at GST compared.Measure the polishing speed that uses each paste compound that the planless wafer that deposits phase-change material is polished respectively according to the method shown in embodiment 1.The result is as shown in table 4.
Table 4
Result from table 4 can find out, compares with 2 paste compound with Comparative Examples 1, and the paste compound of embodiment 7-11 has demonstrated the higher polishing speed to the GST layer.Especially, it is better to contain the polish results of paste compound of aliphatic alkylamine or ammonium alkali.
[to the test of wafer polishing that figure is arranged]
For testing size composition objectively has the wafer of figure to the polishing effect of semiconductor figure through the following steps manufacturing:
Step 1: deposit thickness is the silicon nitride (SiN) of
Step 2: deposit thickness does
Silicon dioxide (SiO
2)
Step 3: on oxide membranous layer, form figure
Step 4: deposit thickness does
Phase-change material (Ge
2Sb
2Te
5)
This silicon oxide film is used as the barrier layer in graph area.Composition among the mensuration embodiment 1 and 3 is to there being the different polishing behavior of figure.To such an extent as to the polishing speed of the composition in Comparative Examples 1 and 2 is crossed low can't the evaluation the state of figure.
Use the identical condition of describing with embodiment 1 of polishing condition that the wafer that figure is arranged is measured, different is to have changed polishing time.Detect (EPD) and carried out polishing (30%) after the time recording optical end point by the EPD system, observe erosion, depression and roughness that the graphics field is arranged.The result lists in table 5.
Table 5
After the figure polishing, the better effects if of the erosion of the composition of embodiment 1, erosion edge and depression.Only observe a spot of residue, this removal of residue can be removed through controlling polishing time behind EPD fully.
Use the composition among the embodiment 2 to carry out not having residue after the figure polishing.The composition of embodiment 2 has demonstrated good maximal roughness in graph area.The edge of figure is etched slightly, and the erosion level is lower than acceptable level
can not cause any problem.
The amount of the nitrogen-containing compound in the composition of a little higher than embodiment 1 of the amount of the nitrogen-containing compound that uses in the composition of embodiment 3 erosion and depression level are improved slightly, but the result of residue and maximal roughness is better.
Can find out that from these results the composition of embodiment 1-3 is suitable for the GST polishing, and demonstrates outstanding figure polishing performance.
[to the further test of planless wafer polishing]
< embodiment 12-16 and Comparative Examples 3-8 >
The slurry of shown in following table 1A, forming that has with the no abrasive grains of deionized water preparation.In embodiment 12-16 and Comparative Examples 3, use triethylamine (TEA) as nitrogen-containing compound.In these paste compounds, the content of used triethylamine and the kind of oxidant and content are different.Use nitric acid that the final pH value of all paste compounds is adjusted to 3.5.
Table 1A
After with each paste compound the planless wafer that deposits phase-change material being polished respectively under the following polishing condition, measure the polishing effect of each slurry to phase-change material.The result is shown in table 2A.
Use consists of germanium (Ge): antimony (Sb): tellurium (Te) is 2: 2: 5 Ge
2Sb
2Te
5(GST) as phase-change material.With direct current magnetron sputtering process (D.C magnetron sputtering) sediment phase change material on planless wafer, form
thick layer.The PETEOS silicon oxide film thick with
be as polish stop, and with IC1000/SubaIVCMP pad (Rodel company) as polishing pad.With the MIRRA polishing machine of 200mm (by (the Applied Materials of Applied Materials; AMAT) make); Downward pressure be 3.0psi, flow rate of slurry be 200mL/min, bed speed (table speed) to be 100 rev/mins be under 100 rev/mins the condition with axle speed, this phase-change material was polished 1 minute.
Table 2A
2A can find out from table; Compare with the paste compound among the Comparative Examples 3-8; The paste compound that has been used in combination among the embodiment 12-16 of nitrogen-containing compound and corresponding oxidant has demonstrated higher GST layer polishing speed, and has greatly increased the selectivity (＞100) of polishing speed between GST layer and silicon oxide film.In addition, the paste compound among the embodiment 12-16 shows the unevenness of the GST polishing that is lower than the paste compound among the Comparative Examples 3-8.And, owing to do not contain abrasive grains in the paste compound among the embodiment 1-5,, can be avoided by the surface contamination problem that abrasive grains causes so can predict.
Polish unevenness according to computes:
Unevenness (%)=(standard deviation of polishing speed/average polished speed) * 100 (%)
Begin from center wafer,, measure the polishing speed on whole surface with 49-point pole graph method (49-point polar map method).The low more explanation polishing of the numerical value of unevenness is carried out evenly more.
< embodiment 17-24 >
According to the method identical with embodiment 15, the preparation paste compound, difference is shown in table 3A, to change the kind and the content of said nitrogen-containing compound.According to the kind and the content of nitrogen-containing compound, the polishing performance (that is, polishing speed) of paste compound on the GST layer compared.Measure the polishing speed that uses each paste compound that the planless wafer that deposits phase-change material is polished respectively according to the method shown in embodiment 15.The result is shown in table 3A.
Table 3A
Result from table 3A can find out that compare with the paste compound that contains by the substituted fatty amine of alcohol radical group, the paste compound that contains fat alkylamine or ammonium alkali has demonstrated higher GST layer polishing speed.
[to the further test of wafer polishing that figure is arranged]
For testing size composition objectively has the wafer of figure to the polishing effect of semiconductor figure through the following steps manufacturing:
Step 1: deposit thickness is the silicon nitride (SiN) of
Step 2: deposit thickness does
Silicon dioxide (SiO
2)
Step 3: on oxide membranous layer, form figure
Step 4: deposit thickness does
Phase-change material (Ge
2Sb
2Te
5)
This silicon oxide film is used as the barrier layer in graph area.Composition among mensuration embodiment 13-15 and the Comparative Examples 4-8 is to there being the different polishing behavior of figure.
Use the identical condition of describing with embodiment 12 of polishing condition that the wafer that figure is arranged is measured, different is to have changed polishing time.Detect (EPD) and carried out polishing (50%) after the time recording optical end point by the EPD system, observe erosion, depression and roughness that the graphics field is arranged.The result lists in table 4A.
Table 4A
4A can find out from table, compares with the paste compound among the Comparative Examples 4-8, and the paste compound that contains among the embodiment 13-15 of nitrogen-containing compound and oxidant has demonstrated the result who corrodes, corrodes edge, depression, residue and maximal roughness preferably.
Can obviously find out through above explanation, the invention provides a kind of CMP paste compound and a kind of method of using this CMP paste compound that phase-change memory device is polished that phase-change memory device is polished of being used for.Paste compound of the present invention can polish phase-change memory device apace; Can be implemented in the high polishing selectivity between phase-change storage material and polish stop (like silicon oxide film); The appearance of processing flaw (like depression and erosion) is minimized, thereby high-quality polished surface is provided.
After the figure polishing, the result that paste compound of the present invention has demonstrated better erosion, corroded the edge, caves in and estimate.In an exemplary execution mode, the phase-change memory device that makes can comprise metal alloy or chalcogenide layer, demonstrates its erosion maximum to do
And/or erosion edge maximum for approximately
And/or the depression maximum is for about
And/or maximal roughness (R
Max) for about
For example, corroding maximum does
And/or erosion edge maximum for approximately
And/or the depression maximum is for about
And/or maximal roughness (R
Max) for about
Have benefited from the instruction that above description provides, those skilled in the art can therefrom expect a lot of modifications and other execution mode.Therefore, it should be understood that the present invention is not limited to disclosed specific execution mode, and its modification and other execution mode also belonged to the scope of appended claim.Although used technical term here, it just is used for general description, is not being defined as purpose, and scope of the present invention is defined by the claims.
Claims (35)
1. paste compound that is used for phase-change memory device is carried out chemico-mechanical polishing; This paste compound contains deionized water and nitrogen-containing compound; Said nitrogen-containing compound comprises at least a compound that is selected from fat tertiary amine, aliphatic heterocycle compound, ammonium salt, ammonium alkali and their combination; The ratio of the polishing rate of GST layer and the polishing rate of silicon oxide layer is greater than 100, and the pH value of said paste compound is 2-5.
2. paste compound according to claim 1, wherein, said phase-change memory device contains metal alloy or chalcogenide.
3. paste compound according to claim 2, wherein, said phase-change memory device contains and is selected from InSe, Sb
2Te
3, GeTe, Ge
2Sb
2Te
5, InSbTe, GaSeTe, SnSb
2Te
4, InSbGe, AgInSbTe, (GeSn) SbTe, GeSb (SeTe) and Te
81Ge
15Sb
2S
2In at least a compound.
4. paste compound according to claim 1, wherein, said fat tertiary amine has at least one alkyl or alcohol radical.
5. paste compound according to claim 4, wherein, said fat tertiary amine has at least one alkyl.
6. paste compound according to claim 4, wherein, said fat tertiary amine has at least one substituting group that contains 1-7 carbon atom.
7. paste compound according to claim 1, wherein, said aliphatic heterocycle compound comprises diethylenediamine compound.
8. paste compound according to claim 1, wherein, said ammonium salt or ammonium alkali comprise and are selected from TMAH, tetraethyl ammonium hydroxide, TPAOH, their salt of deriving and at least a compound in their combination.
9. paste compound according to claim 1 wherein, is a benchmark with the total weight of this paste compound, and the content of said nitrogen-containing compound is about 0.001-5 weight %.
10. paste compound according to claim 1, wherein, this paste compound also contains abrasive grains.
11. paste compound according to claim 10, wherein, said abrasive grains comprises: be selected from least a metal oxide particle in the group of being made up of silica, aluminium oxide, cerium oxide and zirconia; Or synthetic polymer particle; Or their combination.
12. paste compound according to claim 10, wherein, the one-level average particulate diameter of said abrasive grains is about 1-200nm, and average specific surface area is about 10-500m
2/ g.
13. paste compound according to claim 10 wherein, is a benchmark with the total weight of this paste compound, the content of said abrasive grains is about 0.01-30 weight %.
14. paste compound according to claim 1, wherein, this paste compound also contains oxidant.
15. paste compound according to claim 14, wherein, the standard electric chemistry redox current potential of said oxidant is higher than the standard electric chemistry redox current potential of the phase-change material of said phase-change memory device.
16. paste compound according to claim 14, wherein, said oxidant comprises peroxide or iron compound.
17. paste compound according to claim 16, wherein, said oxidant comprises peroxide.
18. paste compound according to claim 16, wherein, said peroxide is: have the compound of one or more peroxy-radicals, or contain the compound of the element that is in its highest oxidation state.
19. paste compound according to claim 18, wherein, said peroxide is the compound with one or more peroxy-radicals.
20. paste compound according to claim 18; Wherein, the said compound that contains one or more peroxy-radicals comprises and is selected from hydrogen peroxide, carbamide peroxide, percarbonate, benzoyl peroxide, Peracetic acid, di-tert-butyl peroxide, permonosulphuric acid, peroxy-disulfuric acid, their salt of deriving and at least a compound in their combination.
21. paste compound according to claim 18; Wherein, the said compound that contains the element that is in its highest oxidation state comprises and is selected from periodic acid, hyperbromic acid, perchloric acid, high boric acid, permanganic acid, their salt of deriving and at least a compound in their combination.
22. paste compound according to claim 16, wherein, said iron compound comprises the compound that contains iron in the molecular structure.
23. paste compound according to claim 14, wherein, said oxidant comprises at least a compound that is selected from hydrogen peroxide, permonosulphuric acid, peroxy-disulfuric acid, iron ion compound, iron chelate and their combination.
24. paste compound according to claim 23, wherein, said oxidant comprises hydrogen peroxide.
25. paste compound according to claim 14 wherein, is a benchmark with the total weight of this paste compound, the content of said oxidant is about 0.01-10 weight %.
26. paste compound according to claim 1, wherein, this paste compound also contains abrasive grains and oxidant.
27. paste compound according to claim 1, wherein, this paste compound also contains pH value conditioning agent.
28. paste compound according to claim 27, wherein, said pH value conditioning agent comprises that being selected from nitric acid, phosphoric acid, sulfuric acid, hydrochloric acid, pKa is 6 or lower organic carboxyl acid and at least a acid in their combination.
29. method that the phase-change memory device that contains phase-change material layers is polished; Wherein, This method comprises said phase-change material layers is contacted with the paste compound that is used for chemico-mechanical polishing; This paste compound contains deionized water and nitrogen-containing compound, and said nitrogen-containing compound comprises at least a compound that is selected from fatty amine, aromatic amine, ammonium salt, ammonium alkali and their combination.
30. method according to claim 29, wherein, the said paste compound that is used for chemico-mechanical polishing also contains abrasive grains.
31. method according to claim 29, wherein, the said paste compound that is used for chemico-mechanical polishing also contains oxidant.
32. method according to claim 29, wherein, the said paste compound that is used for chemico-mechanical polishing also contains abrasive grains and oxidant.
33. method according to claim 29; Wherein, The preparation of said phase-change memory device comprises insulating material is applied on the semiconductor wafer to form insulating barrier; Make this insulating barrier complanation, on the insulating barrier of this complanation, form figure, and on the insulating barrier that forms figure, use phase-change material to form phase-change material layers; Said method comprises the said paste compound that is used for chemico-mechanical polishing contacted with said phase-change material layers, thereby said phase-change material layers is polished, up to exposing said insulating barrier.
34. method according to claim 33; Wherein, Said phase-change material layers polished comprise: the polishing pad that the said paste compound that is used for chemico-mechanical polishing is applied to rotation; Under preset pressure condition, this polishing pad is contacted with said phase-change material layers, utilize frictional force to make the partial phase change material layer polished.
35. a phase-change memory device, this phase-change memory device is polished through the described method of claim 29.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070065872 | 2007-06-29 | ||
| KR1020070065872A KR20090002501A (en) | 2007-06-29 | 2007-06-29 | Cmp slurry composition for the phase change memory materials and polishing method using the same |
| KR10-2007-0065874 | 2007-06-29 | ||
| KR10-2007-0065872 | 2007-06-29 | ||
| KR1020070065874 | 2007-06-29 | ||
| KR1020070065874A KR100943020B1 (en) | 2007-06-29 | 2007-06-29 | CMP slurry composition for the phase change memory materials and polishing method using the same |
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| CN101333420B true CN101333420B (en) | 2012-10-31 |
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| US8815110B2 (en) * | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
| US8916473B2 (en) | 2009-12-14 | 2014-12-23 | Air Products And Chemicals, Inc. | Method for forming through-base wafer vias for fabrication of stacked devices |
| KR101396232B1 (en) * | 2010-02-05 | 2014-05-19 | 한양대학교 산학협력단 | Slurry for polishing phase change material and method for patterning polishing phase change material using the same |
| US10103331B2 (en) | 2010-02-05 | 2018-10-16 | Industry-University Cooperation Foundation Hanyang University | Slurry for polishing phase-change materials and method for producing a phase-change device using same |
| CN102559056B (en) * | 2010-12-16 | 2015-06-17 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing alloy phase change materials |
| KR102611598B1 (en) * | 2017-04-27 | 2023-12-08 | 주식회사 동진쎄미켐 | Aqueous slurry composition for chemical mechanical polishing |
| WO2018199453A1 (en) * | 2017-04-27 | 2018-11-01 | 주식회사 동진쎄미켐 | Slurry composition for chemical mechanical polishing |
| US10870799B2 (en) * | 2017-08-25 | 2020-12-22 | Versum Materials Us, Llc | Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device |
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| CN1616572A (en) * | 2004-09-24 | 2005-05-18 | 中国科学院上海微系统与信息技术研究所 | Nano polishing liquid for sulfuric compound phase changing material chemical mechanical polishing and its use |
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| CN1616572A (en) * | 2004-09-24 | 2005-05-18 | 中国科学院上海微系统与信息技术研究所 | Nano polishing liquid for sulfuric compound phase changing material chemical mechanical polishing and its use |
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