CN111004581A - Chemical mechanical polishing solution for phase-change material composite abrasive and application thereof - Google Patents
Chemical mechanical polishing solution for phase-change material composite abrasive and application thereof Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 87
- 239000012782 phase change material Substances 0.000 title claims abstract description 28
- 239000000126 substance Substances 0.000 title claims abstract description 26
- 239000002131 composite material Substances 0.000 title claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910017629 Sb2Te3 Inorganic materials 0.000 claims abstract description 24
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 13
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000007800 oxidant agent Substances 0.000 claims abstract description 12
- 239000004094 surface-active agent Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 8
- 230000008859 change Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 7
- 239000006259 organic additive Substances 0.000 claims description 7
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 4
- 239000003082 abrasive agent Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 4
- 239000012286 potassium permanganate Substances 0.000 claims description 4
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims description 2
- 239000003945 anionic surfactant Substances 0.000 claims description 2
- 150000004770 chalcogenides Chemical class 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 229960002449 glycine Drugs 0.000 claims description 2
- 235000013905 glycine and its sodium salt Nutrition 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000001384 succinic acid Substances 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 230000007812 deficiency Effects 0.000 abstract description 3
- 230000002195 synergetic effect Effects 0.000 abstract description 3
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 1
- 238000006748 scratching Methods 0.000 abstract 1
- 230000002393 scratching effect Effects 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 16
- 238000007517 polishing process Methods 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910018321 SbTe Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BPDQXJZWVBPDSN-UHFFFAOYSA-N tellanylideneantimony;tellurium Chemical compound [Te].[Te]=[Sb].[Te]=[Sb] BPDQXJZWVBPDSN-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a chemical mechanical polishing solution of a phase-change material composite abrasive, which is used for Cr in a phase-change memory devicex‑Sb2Te3And (5) polishing the phase change material. Due to Crx‑Sb2Te3Is a ternary metal alloy, has low film hardness, and is easy to scratch by using a single abrasive. The novel composite abrasive polishing solution disclosed by the invention can well solve the problem of scratching the surface of a film. The composite abrasive polishing solution for CMP comprises the following components: oxidant, surfactant, abrasive of silicon dioxide and cerium oxide, pH regulator and deionized water. The method is characterized in that two kinds of grinding materials make up for the deficiency, and the different effects of the synergistic effect on the CST film can enable the film removal rate to be more controllable and the surface quality to be better, thereby meeting the requirements of preparing the phase change memory CMP.
Description
Technical Field
The invention belongs to the technical field of microelectronics, relates to a chemical mechanical polishing solution, and particularly relates to a Cr phase-change material applied to a chalcogenide compoundx-Sb2Te3(0<x<0.5) of chemical polishing solution.
Technical Field
In recent years, a Phase Change Memory (PCM) structure has been developed from a conventional T-type structure to a limited structure. The confined structure is such that a phase change material is deposited in a pore, the phase change material is connected to an electrode at the other end of the pore, and a current is passed through the channel to generate joule heat to read the resistance state of the cell.
Sb2Te3The crystallization rate of the system is faster than that of the traditional phase change material GST, the system can easily meet the requirement of replacing the operation speed of DRAM, but the crystallization temperature is low, the data can not be kept for a long time, and impurities, Cr, are usually introduced to improve the thermal stability of the systemxSb2Te3(0<x<0.5) high speed and good stability. Cr (chromium) componentx-Sb2Te3(0<x<0.5) has various advantages as a high-performance phase change memory material. And the traditional phase change material GST polishing process is not suitable for new material Crx-Sb2Te3(0<x<0.5) polishing, however for the new phase change material Crx-Sb2Te3(0<x<0.5) CMP polishing, to date, very few have been reported. Published in the Zhang Bright topic group of 2017, the publication "Optimization of parking and Process parameter chemical mechanical polishing of Cr-bonded Sb2Te3thin film "(EI search number: 20172303724810). Studies in the literature have found that Cr is polished under acidic conditions using a polishing solution containing 10 wt% colloidal silica abrasive (particle size 80.3nm) and 0.5 wt% hydrogen peroxidex-Sb2Te3(0<x<0.5) the RMS surface roughness reached 0.418 nm. In the Zhang regular Bright project group published in 2019, Optimization on chemical mechanical planarization of chromium doped titanium (Cr-SbTe) for PCM Devices (DOI:10.1109/CSTIC.2019.8755751), which used a single 10 wt% silica colloidAbrasive (grain diameter is 39.9nm), and Cr is treated under the condition that the potassium permanganate concentration is 50ppmx-Sb2Te3(0<x<0.5) polishing parameters were optimized with an RMS surface roughness of 0.52 nm. The above-mentioned use of a single silica abrasive for Crx-Sb2Te3(0<x<0.5) polishing of the film has a limitation on the optimization of the surface quality of the film, whereas Cr is polished using a composite abrasivex-Sb2Te3(0<x<0.5) the film is polished, so that the scratches on the surface of the film can be effectively reduced, and the roughness mean square value of the surface of the film is reduced.
Disclosure of Invention
The invention aims to solve the technical problem of providing a chemical mechanical polishing solution of a novel phase-change material composite abrasive, and the chemical mechanical polishing solution meets the process requirement of CMP (chemical mechanical polishing) in the preparation of a phase-change memory and needs to be applied to Crx-Sb2Te3(0<x<0.5) removing the material without damage, and ensuring that the surface element composition and the state of the phase-change material are the same before and after polishing due to high polishing selectivity between the phase-change material and the barrier layer. The two abrasives are used for polishing, and the method is characterized in that the two abrasives make up for the deficiencies of each other, and the synergistic effect is generated to play different roles in the Cr-SbTe film, so that the removal rate of the film is more controllable, and the surface quality is better. Conventional polishing particle SiO2The polishing solution has certain hardness and obvious mechanical action in the polishing process. CeO (CeO)2The cerium in the cerium oxide is rare earth element, the outer layer has empty f-orbit and d-orbit, can form feedback bond with lone electron pair in Cr, Sb and Te in main group elements, and the high-activity cerium oxide can be combined with Cr in the polishing processx-Sb2Te3(0<x<0.5) the film material generates enough chemical correlation, and simultaneously removes cross-linking products together with the silicon oxide abrasive through mechanical action, thereby effectively avoiding the residual phenomenon of polishing products.
Cr of the inventionx-Sb2Te3The chemical mechanical polishing solution of the phase-change material composite abrasive comprises the following parts: based on the total weight of the polishing solution, 0.2 to 50 weight percent of silicon oxide and cerium oxide polishing particles, 0.001 to 5 weight percent of oxidant, 0.01 to 4 weight percent of surfactant, 0.01 to 4 weight percent of organic additive and pH regulatorAnd deionized water.
Further, the silicon oxide and cerium oxide polishing particles have a particle size range of: 40-150nm, preferably 40-100nm.
Furthermore, the content of the silicon oxide and cerium oxide polishing particles is 2-8 wt% based on the total weight of the polishing solution.
For metal polishing, the polishing process generally oxidizes the metal surface by an oxidant to generate a softer hydrated oxide layer on the surface, the oxide layer is removed by mechanical action to expose a fresh metal surface, and the steps are circulated in such a way to realize the continuous polishing effect on Crx-Sb2Te3(0<x<0.5) this alloy, the oxidizing agent, which is selected from hydrogen peroxide, ferric chloride or potassium permanganate, plays an extremely important role.
Further, the content of the oxidant is 0.001-4 wt%.
The invention adds the surface active agents of sodium polyacrylate, polyoxyethylene ether phosphate and hexadecyl trimethyl ammonium bromide into the chemical mechanical polishing solution as the anionic surface active agents, and can improve the stability of the polishing solution by the specific electrification condition of the anionic surface active agents, thereby being beneficial to Crx-Sb2Te3(0<x<0.5) chemical mechanical polishing of the phase change material. In the case of using silicon oxide and cerium oxide polishing particles for Crx-Sb2Te3(0<x<0.5) during the polishing process of the phase-change material, after the phase-change material is oxidized to a high valence state by an oxidizing agent, the outer layer hollow orbit can form a feedback bond with a lone electron pair in the organic additive. This coordination promotes further removal of the oxidized film, thereby allowing the polishing process to continue.
Further, the content of the surfactant is 0.05-2 wt%.
Also different organic additives, due to their specific structure and charge condition, can promote or inhibit this coordination bond. By adding different organic additives, the polishing process can be controlled, so that the speed of the polishing process is controllable, and the removal speed required in the polishing process is realized.
Further, the content of the organic additive is 0.01-1 wt%.
The pH regulator can regulate the pH value of the polishing solution, and has great influence on the oxidizing agent in the polishing solution, thereby influencing the stability and the polishing effect of the polishing solution. The optimal range of pH adjustment is 3-5.
The invention achieves the technical effects that: according to the method, two abrasives of silicon dioxide and cerium oxide are used for making up for the deficiencies, so that the synergistic effect is generated to play different roles in the CST film, the film removal rate is more controllable, the surface quality is better, and the requirement for preparing the phase change memory CMP is met. CeO (CeO)2The cerium in the cerium oxide is rare earth element, the outer layer has empty f-orbit and d-orbit, can form feedback bond with lone electron pair in Cr, Sb and Te in main group elements, and the high-activity cerium oxide can be combined with Cr in the polishing processx-Sb2Te3(0<x<0.5) the film material generates enough chemical correlation, and simultaneously removes cross-linking products together with the silicon oxide abrasive through mechanical action, thereby effectively avoiding the residual phenomenon of polishing products.
Drawings
FIG. 1 shows deposition of a CST film on an array of silica holes.
FIG. 2 is a schematic post-CMP of a CST film.
Fig. 3 is a schematic diagram of a post-CMP device of a CST thin film with upper and lower electrodes.
In the figure: (1) si (substrate), (2) W (tungsten), (3) SiO2 (silicon dioxide), (4) CST (chromium doped antimony telluride), and (5) Al (aluminum).
FIG. 4 is an AFM image of a polishing material before and after polishing with the polishing liquid 5 of the present invention.
Detailed Description
Example 1:
preparing a polishing solution A: the polishing solution contains 10 wt% of silicon oxide and cerium oxide polishing abrasive with the particle size of 30nm, 4.0 wt% of hydrogen peroxide and 0.5 wt% of potassium hydroxide are added to adjust the pH to be 8, 0.1 wt% of sodium polyacrylate, 0.05 wt% of citric acid and the balance of deionized water.
Example 2:
preparing a polishing solution B: the polishing solution contains 40 wt% of silicon oxide and cerium oxide polishing abrasive with the particle size of 20-80nm, 4.0 wt% of ferric chloride and 0.5 wt% of sodium hydroxide are added to adjust the pH to 9, 0.1 wt% of hexadecyl trimethyl ammonium bromide, 0.05 wt% of acetic acid and the balance of deionized water.
Examples 3 to 7:
example 8:
CMP experiment: polishing Cr-SbTe film by adopting an nSpire _6EC type electronic film planarization system of Strasbaugh company in America, wherein a polishing pad is IC1000/Sub, the rotation speed of a chassis of the polishing machine is 50rpm, the rotation speed of a polishing head is 50rpm, the flow rate of polishing liquid is 120ml/min, the pressure is 3psi, the polishing liquid adopts the compositions provided by the above embodiments respectively, a polished sample is CrxSb2Te3The roughness RMS of the polished surface measured by AFM atomic force microscopy is shown in the following table: the requirements of the high-performance phase change memory are met.
Results of the polishing experiments:
| polishing liquid | Crx-Sb2Te3 polishing Rate (nm/min) | Roughness RMS (nm) |
| |
70.8 | 0.58 |
| |
90.5 | 0.69 |
| |
108.7 | 0.72 |
| |
148.3 | 0.52 |
| |
120.5 | 0.23 |
| Polishing solution 6 | 118.2 | 0.61 |
| Polishing liquid 7 | 180.6 | 1.23 |
AFM before and after polishing the polishing material with the polishing solution 5 of the present invention showed ideal polishing effect as shown in FIG. 4.
The oxidizing agent, the surfactant, the organic additive and the PH regulator in the above embodiments of the present invention are not limited to those described in the embodiments, and can be selected accordingly according to the following disclosed reagents, so as to achieve the objectives of the present invention: the oxidant is selected from hydrogen peroxide, ferric chloride or potassium permanganate; the surfactant is an anionic surfactant and is selected from sodium polyacrylate, polyoxyethylene ether phosphate or hexadecyl trimethyl ammonium bromide; the additive is acetic acid, or and formic acid, or and citric acid, or and aminoacetic acid, or and succinic acid; the pH regulator is nitric acid, or potassium hydroxide, or tetramethylammonium hydroxide.
Claims (10)
1. The chemical mechanical polishing solution for the phase-change material composite abrasive is characterized in that: the composite abrasive polishing solution comprises the following parts: based on the total weight of the polishing solution, 0.2 to 50 weight percent of silicon oxide and cerium oxide polishing particles, 0.001 to 5 weight percent of oxidant, 0.01 to 4 weight percent of surfactant, 0.01 to 4 weight percent of organic additive, pH regulator and deionized water.
2. The chemical mechanical polishing solution of the phase change material composite abrasive according to claim 1, characterized in that: the oxidant is selected from hydrogen peroxide, ferric chloride or potassium permanganate; the surfactant is an anionic surfactant and is selected from sodium polyacrylate, polyoxyethylene ether phosphate or hexadecyl trimethyl ammonium bromide; the additive is acetic acid, or and formic acid, or and citric acid, or and aminoacetic acid, or and succinic acid; the pH regulator is nitric acid, or potassium hydroxide, or tetramethylammonium hydroxide.
3. The chemical mechanical polishing solution of the phase change material composite abrasive according to claim 1, characterized in that: the composite abrasive is silicon dioxide and cerium dioxide polishing particles, the particle size range of the composite abrasive is 40-150nm, and the content ratio of the composite abrasive to the cerium dioxide polishing particles is 1: 1.
4. The chemical mechanical polishing solution of the phase change material composite abrasive according to claim 1 or 2, characterized in that: the pH adjusting range is 2-9.
5. The chemical mechanical polishing solution of the phase change material composite abrasive according to claim 1, characterized in that: the total content of the composite abrasive particles is 2-8 wt%.
6. The chemical mechanical polishing solution of the phase change material composite abrasive according to claim 1 or 2, characterized in that: the content of the oxidant is 0.001-4 wt%.
7. The chemical mechanical polishing solution of the phase change material composite abrasive according to claim 1 or 2, characterized in that: the content of the surfactant is 0.05-2 wt%.
8. The chemical mechanical polishing solution of the phase change material composite abrasive according to claim 1 or 2, characterized in that: the additive content is 0.01-1 wt%.
9. A phase change memory prepared from the chemical mechanical polishing solution of the phase change material composite abrasive material of any one of claims 1 to 8, which is characterized by comprising the following steps:
a) depositing a bottom electrode tungsten layer with the thickness of 1-200nm on a silicon substrate by magnetron sputtering,
b) the bottom electrode tungsten is chemically and mechanically polished to realize high planarization,
c) etching the tungsten of the bottom electrode by photoetching to form a vertical through hole with the diameter of 10-1000nm,
d) depositing a layer of SiO with the thickness of 1-200nm on the etched through hole2A layer of a material selected from the group consisting of,
e) depositing 1-200nm Cr on the device after removing the photoresistxSb2Te3Film of which 0<x<0.5，
i) Removing and flattening the redundant phase-change film material layer by chemical mechanical polishing by using the polishing solution as claimed in any one of claims 1 to 8.
10. The Cr of any one of claims 1 to 8x-Sb2Te3The application of the chemical mechanical polishing solution of the phase-change material composite abrasive is characterized in that: the polishing solution is used for chalcogenide phase-change material Crx-Sb2Te3The CMP process of (1), wherein 0<x<0.5。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911293679.7A CN111004581A (en) | 2019-12-16 | 2019-12-16 | Chemical mechanical polishing solution for phase-change material composite abrasive and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911293679.7A CN111004581A (en) | 2019-12-16 | 2019-12-16 | Chemical mechanical polishing solution for phase-change material composite abrasive and application thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201748A (en) * | 2020-09-27 | 2021-01-08 | 昕原半导体(上海)有限公司 | Preparation method of tungsten film of resistive random access memory |
| CN115160935A (en) * | 2022-08-26 | 2022-10-11 | 江南大学 | Octahedral cerium oxide abrasive particle polishing solution and preparation method and application thereof |
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| CN1616572A (en) * | 2004-09-24 | 2005-05-18 | 中国科学院上海微系统与信息技术研究所 | Nano polishing liquid for sulfuric compound phase changing material chemical mechanical polishing and its use |
| CN101586005A (en) * | 2009-07-03 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | Chemical-mechanical polishing solution for SiSb based phase-changing materials |
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| CN1616572A (en) * | 2004-09-24 | 2005-05-18 | 中国科学院上海微系统与信息技术研究所 | Nano polishing liquid for sulfuric compound phase changing material chemical mechanical polishing and its use |
| CN101586005A (en) * | 2009-07-03 | 2009-11-25 | 中国科学院上海微系统与信息技术研究所 | Chemical-mechanical polishing solution for SiSb based phase-changing materials |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112201748A (en) * | 2020-09-27 | 2021-01-08 | 昕原半导体(上海)有限公司 | Preparation method of tungsten film of resistive random access memory |
| CN112201748B (en) * | 2020-09-27 | 2024-04-16 | 昕原半导体(上海)有限公司 | Preparation method of tungsten film of resistive random access memory |
| CN115160935A (en) * | 2022-08-26 | 2022-10-11 | 江南大学 | Octahedral cerium oxide abrasive particle polishing solution and preparation method and application thereof |
| CN115160935B (en) * | 2022-08-26 | 2023-08-25 | 江南大学 | Octahedral cerium oxide abrasive particle polishing solution and preparation method and application thereof |
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