CN103231302A - Method for obtaining super-smooth surface low-sub-surface-damage crystal - Google Patents

Method for obtaining super-smooth surface low-sub-surface-damage crystal Download PDF

Info

Publication number
CN103231302A
CN103231302A CN2013101277498A CN201310127749A CN103231302A CN 103231302 A CN103231302 A CN 103231302A CN 2013101277498 A CN2013101277498 A CN 2013101277498A CN 201310127749 A CN201310127749 A CN 201310127749A CN 103231302 A CN103231302 A CN 103231302A
Authority
CN
China
Prior art keywords
crystal
polishing
super
cerium oxide
smooth surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2013101277498A
Other languages
Chinese (zh)
Other versions
CN103231302B (en
Inventor
朱杰
张志萌
王占山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongji University
Original Assignee
Tongji University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tongji University filed Critical Tongji University
Priority to CN201310127749.8A priority Critical patent/CN103231302B/en
Publication of CN103231302A publication Critical patent/CN103231302A/en
Application granted granted Critical
Publication of CN103231302B publication Critical patent/CN103231302B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a method for obtaining super-smooth surface low-sub-surface-damage crystal. The method includes the following steps: (1) grinding crystal on a cast iron disc by using boron carbide with the specification as W1 as a grinding material; (2) polishing the crystal on an asphalt disc by using cerium oxide polishing liquid with the particle size as 1 mum; (3) soaking the crystal surface in an organic solvent and processing for 30-60 seconds in an ultrasonic mode; (4) polishing the crystal for 10-15 minutes on a polyurethane polishing gasket by using silicon dioxide polishing liquid with the particle size as 100 nm; (5) placing the crystal in the organic solvent, washing for 30-60 seconds in an ultrasonic mode, and observing the surface topography of the crystal by using a high-power microscope; and (6) if the crystal surface still has scratches, repeating the step (2) to step (5), replacing the cerium oxide polishing liquid with the particle size as 1 mum in the step (2) with cerium oxide polishing liquid with the particle size as 100-300 nm. Compared with the prior art, the method is simple to operate, high in processing efficiency and convenient to popularize.

Description

A kind of method of obtaining the low sub-surface damage crystal of super-smooth surface
Technical field
The present invention relates to crystal ultra-smooth precision machining method, especially relate to a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface.
Background technology
Technology such as high energy ultra-short pulse laser have the surface of good roughness so that the plated film except requiring such as crystal such as YCOB, KDP, LBO, can not have defectives such as cut or trachoma to cause absorption, scattering to laser when light laser incident because of plane of crystal.Therefore guaranteeing that plane of crystal reaches outside the dust magnitude roughness, need control the quantity of the inferior surface scratch of crystal as far as possible.The general own quality of this crystalloid softer (about Mohs' hardness 6.5), traditional finishing method are easy to stay tiny cut or only have smooth surface at plane of crystal, but the residual numerous cut damages of the subsurface stratum under the top layer.At present domestic not scientific research institution provides the detailed glossing of similar crystal such as YCOB and the method for removing the sub-surface damage cut.The present invention is directed to domestic present present situation and propose a kind of ultraprecise processing technology of crystal photoelement, this abrasive polishing process can obtain the accurate crystal photoelement that the face type is good, have super-smooth surface and extremely low sub-surface damage, also has advantages such as working (machining) efficiency height, process stabilizing simultaneously.Can make this patent after traditional twin shaft lapping and buffing machine is implemented, reach ring by custom-designed anchor clamps and throw level, and then reduce the technology cost.
Summary of the invention
Purpose of the present invention be exactly provide in order to overcome the defective that above-mentioned prior art exists a kind of simple to operate, with strong points, reliability is high, working (machining) efficiency is high, the method for obtaining the low sub-surface damage crystal of super-smooth surface being convenient to promote.
The present invention designs a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface under the condition of existing twin shaft lapping and buffing machine or glass polishing machine.This method can be applied to the grinding and polishing of multiple crystal by suitable adjustment.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of method of obtaining the low sub-surface damage crystal of super-smooth surface, this method may further comprise the steps:
(1) grinds: use specification on cast iron plate, crystal to be ground as abrasive material as the boron carbide of W1;
(2) the thick throwing: preparation pitch dish and revise pitch card type, roughness after, using particle diameter is that the cerium oxide polishing slurry of 1 μ m carries out machine glazed finish to crystal and reaches 1nm or basic no marking up to the plane of crystal roughness on the pitch dish;
(3) etching: plane of crystal is immersed in the organic solvent, utilize the ultrasonic processing of ultrasonic washing instrument 30-60 second, to remove the plane of crystal hydrolysis layer, will insert in the crystal scratch defects polishing powder or crystal powder ultrasonic erosion and fall;
(4) chemically mechanical polishing: use particle diameter as the silica polishing fluid of 100nm on polyurethane polishing pad to polishing crystal 10~15 minutes, removing remaining minute scratch marks within a short period of time does not influence the crystal face type simultaneously;
(5) detect: place organic solvent for ultrasonic to clean 30-60 second in crystal, with ultramicroscopic observation plane of crystal pattern;
(6) if the plane of crystal no marking then obtains to have the crystal that super-smooth surface hangs down sub-surface damage; If plane of crystal still has cut, repeating step (2)~(5), and the cerium oxide polishing slurry that is 1 μ m with the middle particle diameter of step (2) changes the cerium oxide polishing slurry that particle diameter is 100-300nm into.
The concrete steps of the described grinding of step (1) comprise: will paste screening glass around the crystal; crystal is fixed on the grinding tool with paraffin; clamp crystal with clamping device then; the accurate fine grinding polishing machine of twin shaft use specification as the boron carbide of W1 as abrasive material; and cooperate cast iron plate that crystal is ground; to remove the damage layer that an operation is brought fast, and make plane of crystal have good face type, flatness is up to standard.
The temperature of the described thick throwing of step (2) is 19.5~20.5 ℃, and the thick time of throwing is 2~3 hours.
In step (2) in the process of polishing crystal, be that the mass fraction of cerium oxide drops to 3% gradually by 6% in the cerium oxide polishing slurry of 1 μ m with particle diameter.
Step (3) or the described organic solvent of step (5) are that (be called for short Me6Si2, molecular formula is (CH to hexamethyldisilane 3) 3SiSi (CH 3) 3).
The temperature of the described organic solvent of step (3) is 40~50 ℃.
The twin shaft polishing machine is adopted in the described chemically mechanical polishing of step (4), and the speed of mainshaft of this twin shaft polishing machine is 30 rev/mins, and the balance staff rotating speed of twin shaft polishing machine is 12 rev/mins.
Compared with prior art, the present invention has the following advantages and beneficial effect:
But process the crystal photoelement with super-smooth surface 1 within a short period of time, have extremely low sub-surface damage and good face type simultaneously.This processing method is applicable to the accurate crystal photoelement that obtains extremely low sub-surface damage, has the certain guidance meaning in similar crystal polishing technology.
2, compared with prior art, the present invention is easy and simple to handle, and is with strong points, and the reliability height is applicable to multiple similar crystal grinding and polishing, also has advantages such as working (machining) efficiency height, process stabilizing simultaneously, is convenient to promote.
3, can make this patent after traditional twin shaft lapping and buffing machine is implemented, reach ring by custom-designed anchor clamps and throw level, and then reduce the technology cost.
Description of drawings
Fig. 1 is that the YCOB crystal grinds plane of crystal pattern under the light microscope of back through W1 boron carbide cast iron plate among the embodiment 1;
Fig. 2 is that the YCOB crystal polishes plane of crystal pattern under the light microscope of back through 1 μ m cerium oxide among the embodiment 1;
Fig. 3 is 45 seconds rear surface patterns of YCOB crystal process organic solvent ultrasonic washing instrument ultrasonic erosion among the embodiment 1;
Fig. 4 is that the YCOB crystal polishes and cleaning treatment rear surface microstructure through 100nm silica polishing fluid among the embodiment 1.
The specific embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
Embodiment 1
The YCOB crystal is carried out grinding and polishing to be handled:
1, grind---the YCOB crystal is fixed on the loading dish with paraffin, around crystal, paste screening glass.Crystal is ground at cast iron plate, and the collocation abrasive material is the boron carbide of W1, milled processed on the accurate fine grinding polishing machine JM030.2 of the sharp living twin shaft in Nanjing, and the surface topography of crystal is as shown in Figure 1.Reduce the damage layer depth when can guarantee grinding rate like this, shorten follow-up polishing time.On the twin shaft lapping and buffing machine when avoiding spool moving from the cooperation of holding tool the unbalanced crystal of introducing of the moment limit of collapsing, and then guarantee that the crystal face type is good.
2, make lacquer disk(-sc)---select for use the Switzerland's No.55 of GUGOLZ company pitch to be placed on the loading dish, fix a circle adhesive tape on every side, increase heating-up temperature gradually, avoid stirring the introducing bubble as far as possible.Can add paraffin in right amount and avoid the pitch dish cut of in polishing process, introducing really up to the mark.The pitch panel surface is smooth and a little after the cooling, marks indentation in panel surface, and with face type, roughness good optical glass asphalt surface is flattened through row immediately.At last the pitch dish is repaiied dish work and all reach standard to guarantee pitch panel surface face type, flatness.
3, the thick throwing---ground before YCOB crystal is thrown in advance.Regulate indoor temperature and make it be stabilized in 19.5~20.5 ℃, utilize at the related clamping device of twin shaft polishing machine, will polish and repair the dish operation and carry out simultaneously, guarantee the smooth of pitch card.Be that the cerium rouge of 1 μ m carries out machine glazed finish with particle diameter, realize overall planarization under the effect of mechanical grinding, the surface topography of crystal as shown in Figure 2.After determining that substantially the previous step grinding operation being produced the damage layer removes, reduce polishing fluid concentration gradually and successively polish.
4, etching--the YCOB plane of crystal can produce cut in the-polishing process under the effect of polishing powder and lacquer disk(-sc), polishing powder or the chip of crystal own can be packed in the cut, plane of crystal also can constantly produce has mobile hydrolysis layer, cause the defectives such as cut in the crystal sub-surface damage layer to be covered by mobile hydrolysis layer, be difficult to effectively subdue.Crystal immersed in the organic solvent with the brilliant VGT-1860QTD/40KHz ultrasonic washing instrument of Hefei section carry out ultrasonic etching processing, control time is within 30 seconds to 1 minute, hydrolysis layer and filler are dissolved, cut in the sub-surface damage layer reveals, this body structure of crystal can not destroyed by organic solvent by the accurate control of etch period, for next step processing lays the first stone, the surface topography of crystal as shown in Figure 3 simultaneously.
5, CMP is smart throws---use particle diameter to be about the silica colloidal polishing liquid cooperation polyurethane polishing pad of 100nm, crystal after the etching processing is carried out chemically mechanical polishing, be under the condition of 12 rev/mins of 30 rev/mins, balance staff rotating speed in the speed of mainshaft, polishing time is controlled to be 15 minutes, short polishing time can be when removing cut, the little face type that influences crystal of trying one's best.
6, detect---place organic solvent to clean 30-60 second at ultrasonic washing instrument in crystal, with ultramicroscopic observation plane of crystal pattern.
7, secondary is smart throws--and-Ruo plane of crystal still has trickle cut, continue to utilize more small particle diameter (100-300nm) cerium oxide polishing slurry polishing 2-3 hour, ultrasonic erosion 30 seconds, and cooperating nm silicon dioxide gel polishing fluid to carry out polishing to obtain required super-smooth surface in 10 minutes in short-term with polyurethane polishing pad, the surface topography of crystal is as shown in Figure 4.
Embodiment 2
A kind of method of obtaining the low sub-surface damage crystal of super-smooth surface, this method may further comprise the steps:
(1) grinds: will paste screening glass around the crystal, crystal is fixed on the grinding tool with paraffin, clamp crystal with clamping device then, the accurate fine grinding polishing machine of twin shaft use specification as the boron carbide of W1 as abrasive material, and cooperate cast iron plate that crystal is ground, to remove the damage layer that an operation is brought fast, and make plane of crystal have good face type, flatness is up to standard;
(2) the thick throwing: after preparing the pitch dish and revising pitch card type, roughness, using particle diameter is that the cerium oxide polishing slurry of 1 μ m carries out machine glazed finish to crystal and reaches 1nm or basic no marking up to the plane of crystal roughness on the pitch dish, wherein, thick temperature of throwing remains on 19.5~20.5 ℃, the thick time of throwing is 2 hours, in the process of polishing crystal, be that the mass fraction of cerium oxide drops to 3% gradually by 6% in the cerium oxide polishing slurry of 1 μ m with particle diameter, in the process of polishing crystal, the pitch dish is trimmed simultaneously and makes that the card of pitch dish is smooth;
(3) etching: plane of crystal is immersed in the organic solvent hexamethyldisilane, the temperature of organic solvent is 40 ℃, utilize the ultrasonic processing of ultrasonic washing instrument 60 seconds, to remove the plane of crystal hydrolysis layer, will insert in the crystal scratch defects polishing powder or crystal powder ultrasonic erosion and fall;
(4) chemically mechanical polishing; Use particle diameter as the silica polishing fluid of 100nm on polyurethane polishing pad to polishing crystal 10 minutes, the twin shaft polishing machine is adopted in chemically mechanical polishing, the speed of mainshaft of this twin shaft polishing machine is 30 rev/mins, the balance staff rotating speed of twin shaft polishing machine is 12 rev/mins, and removing remaining minute scratch marks within a short period of time does not influence the crystal face type simultaneously;
(5) detect: crystal is placed organic solvent hexamethyldisilane ultrasonic cleaning 30 seconds, with ultramicroscopic observation plane of crystal pattern;
(6) if the plane of crystal no marking then obtains to have the crystal that super-smooth surface hangs down sub-surface damage; If plane of crystal still has cut, repeating step (2)~(5), and the cerium oxide polishing slurry that is 1 μ m with the middle particle diameter of step (2) changes the cerium oxide polishing slurry that average grain diameter is 100nm into.
Embodiment 3
A kind of method of obtaining the low sub-surface damage crystal of super-smooth surface, this method may further comprise the steps:
(1) grinds: will paste screening glass around the crystal, crystal is fixed on the grinding tool with paraffin, clamp crystal with clamping device then, the accurate fine grinding polishing machine of twin shaft use specification as the boron carbide of W1 as abrasive material, and cooperate cast iron plate that crystal is ground, to remove the damage layer that an operation is brought fast, and make plane of crystal have good face type, flatness is up to standard;
(2) the thick throwing: after preparing the pitch dish and revising pitch card type, roughness, using particle diameter is that the cerium oxide polishing slurry of 1 μ m carries out machine glazed finish to crystal and reaches 1nm or basic no marking up to the plane of crystal roughness on the pitch dish, wherein, thick temperature of throwing remains on 19.5~20.5 ℃, the thick time of throwing is 3 hours, in the process of polishing crystal, be that the mass fraction of cerium oxide drops to 3% gradually by 6% in the cerium oxide polishing slurry of 1 μ m with particle diameter, in the process of polishing crystal, the pitch dish is trimmed simultaneously and makes that the card of pitch dish is smooth;
(3) etching: plane of crystal is immersed in the organic solvent hexamethyldisilane, the temperature of organic solvent is 50 ℃, utilize the ultrasonic processing of ultrasonic washing instrument 30 seconds, to remove the plane of crystal hydrolysis layer, will insert in the crystal scratch defects polishing powder or crystal powder ultrasonic erosion and fall;
(4) chemically mechanical polishing: use particle diameter as the silica polishing fluid of 100nm on polyurethane polishing pad to polishing crystal 15 minutes, the twin shaft polishing machine is adopted in chemically mechanical polishing, the speed of mainshaft of this twin shaft polishing machine is 30 rev/mins, the balance staff rotating speed of twin shaft polishing machine is 12 rev/mins, and removing remaining minute scratch marks within a short period of time does not influence the crystal face type simultaneously;
(5) detect: crystal is placed organic solvent hexamethyldisilane ultrasonic cleaning 60 seconds, with ultramicroscopic observation plane of crystal pattern;
(6) if the plane of crystal no marking then obtains to have the crystal that super-smooth surface hangs down sub-surface damage; If plane of crystal still has cut, repeating step (2)~(5), and the cerium oxide polishing slurry that is 1 μ m with the middle particle diameter of step (2) changes the cerium oxide polishing slurry that average grain diameter is 300nm into.
Embodiment 4
A kind of method of obtaining the low sub-surface damage crystal of super-smooth surface, this method may further comprise the steps:
(1) grinds: will paste screening glass around the crystal, crystal is fixed on the grinding tool with paraffin, clamp crystal with clamping device then, the accurate fine grinding polishing machine of twin shaft use specification as the boron carbide of W1 as abrasive material, and cooperate cast iron plate that crystal is ground, to remove the damage layer that an operation is brought fast, and make plane of crystal have good face type, flatness is up to standard;
(2) the thick throwing: after preparing the pitch dish and revising pitch card type, roughness, using particle diameter is that the cerium oxide polishing slurry of 1 μ m carries out machine glazed finish to crystal and reaches 1nm or basic no marking up to the plane of crystal roughness on the pitch dish, wherein, thick temperature of throwing remains on 19.5~20.5 ℃, the thick time of throwing is 2.5 hours, in the process of polishing crystal be that the mass fraction of cerium oxide drops to 3% gradually by 6% in the cerium oxide polishing slurry of 1 μ m with particle diameter, in the process of polishing crystal, the pitch dish is trimmed simultaneously and makes that the card of pitch dish is smooth;
(3) etching: plane of crystal is immersed in the organic solvent hexamethyldisilane, the temperature of organic solvent is 45 ℃, utilize the ultrasonic processing of ultrasonic washing instrument 45 seconds, to remove the plane of crystal hydrolysis layer, will insert in the crystal scratch defects polishing powder or crystal powder ultrasonic erosion and fall;
(4) chemically mechanical polishing: use particle diameter as the silica polishing fluid of 100nm on polyurethane polishing pad to polishing crystal 13 minutes, the twin shaft polishing machine is adopted in chemically mechanical polishing, the speed of mainshaft of this twin shaft polishing machine is 30 rev/mins, the balance staff rotating speed of twin shaft polishing machine is 12 rev/mins, and removing remaining minute scratch marks within a short period of time does not influence the crystal face type simultaneously;
(5) detect: crystal is placed organic solvent hexamethyldisilane ultrasonic cleaning 45 seconds, with ultramicroscopic observation plane of crystal pattern;
(6) if the plane of crystal no marking then obtains to have the crystal that super-smooth surface hangs down sub-surface damage; If plane of crystal still has cut, repeating step (2)~(5), and the cerium oxide polishing slurry that is 1 μ m with the middle particle diameter of step (2) changes the cerium oxide polishing slurry that particle diameter is 200nm into.

Claims (7)

1. one kind is obtained the method that super-smooth surface hangs down the sub-surface damage crystal, it is characterized in that this method may further comprise the steps:
(1) grinds: use specification on cast iron plate, crystal to be ground as abrasive material as the boron carbide of W1;
(2) the thick throwing: the use particle diameter is that the cerium oxide polishing slurry of 1 μ m polishes crystal on the pitch dish;
(3) etching: plane of crystal is immersed in the organic solvent ultrasonic processing 30-60 second;
(4) chemically mechanical polishing: use particle diameter as the silica polishing fluid of 100nm on polyurethane polishing pad to polishing crystal 10~15 minutes;
(5) detect: place organic solvent for ultrasonic to clean 30-60 second in crystal, with ultramicroscopic observation plane of crystal pattern;
(6) if the plane of crystal no marking then obtains to have the crystal that super-smooth surface hangs down sub-surface damage; If plane of crystal still has cut, repeating step (2)~(5), and the cerium oxide polishing slurry that is 1 μ m with the middle particle diameter of step (2) changes the cerium oxide polishing slurry that particle diameter is 100-300nm into.
2. a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface according to claim 1; it is characterized in that; the concrete steps of the described grinding of step (1) comprise: will paste screening glass around the crystal; clamp crystal with clamping device then; the accurate fine grinding polishing machine of twin shaft uses specification as the boron carbide of W1 as abrasive material, and the cooperation cast iron plate grinds crystal.
3. a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface according to claim 1 is characterized in that the temperature of the described thick throwing of step (2) is 19.5~20.5 ℃, and the thick time of throwing is 2~3 hours.
4. a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface according to claim 1, it is characterized in that, in step (2) in the process of polishing crystal, be that the mass fraction of cerium oxide drops to 3% gradually by 6% in the cerium oxide polishing slurry of 1 μ m with particle diameter.
5. a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface according to claim 1 is characterized in that step (3) or the described organic solvent of step (5) are hexamethyldisilane.
6. a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface according to claim 1 is characterized in that the temperature of the described organic solvent of step (3) is 40~50 ℃.
7. a kind of method of obtaining the low sub-surface damage crystal of super-smooth surface according to claim 1, it is characterized in that, the twin shaft polishing machine is adopted in the described chemically mechanical polishing of step (4), the speed of mainshaft of this twin shaft polishing machine is 30 rev/mins, and the balance staff rotating speed of twin shaft polishing machine is 12 rev/mins.
CN201310127749.8A 2013-04-12 2013-04-12 Method for obtaining super-smooth surface low-sub-surface-damage crystal Expired - Fee Related CN103231302B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310127749.8A CN103231302B (en) 2013-04-12 2013-04-12 Method for obtaining super-smooth surface low-sub-surface-damage crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310127749.8A CN103231302B (en) 2013-04-12 2013-04-12 Method for obtaining super-smooth surface low-sub-surface-damage crystal

Publications (2)

Publication Number Publication Date
CN103231302A true CN103231302A (en) 2013-08-07
CN103231302B CN103231302B (en) 2015-04-29

Family

ID=48879409

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310127749.8A Expired - Fee Related CN103231302B (en) 2013-04-12 2013-04-12 Method for obtaining super-smooth surface low-sub-surface-damage crystal

Country Status (1)

Country Link
CN (1) CN103231302B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103882378A (en) * 2014-02-13 2014-06-25 同济大学 Method for preparing antireflection film having high laser-induced damage threshold on yttrium calcium oxytriborate (YCOB) crystals
CN106826408A (en) * 2017-02-09 2017-06-13 同济大学 A kind of lbo crystal polishing method based on crystal oxidant
CN108161578A (en) * 2017-12-06 2018-06-15 江苏师范大学 A kind of processing method of elongated optical device end face
CN108818157A (en) * 2018-06-20 2018-11-16 天津大学 A kind of Nd:GGG crystrallographic plane optical element high-efficiency low-damage processing method
CN109590820A (en) * 2019-01-02 2019-04-09 中国科学院上海光学精密机械研究所 The processing method of superhard laser crystal surface roughness
CN110653681A (en) * 2019-09-29 2020-01-07 毛林才 Glass polishing process for liquid crystal display production
CN115181498A (en) * 2022-06-29 2022-10-14 大连理工大学 Polishing solution for KDP crystal and efficient grinding and polishing process

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109623581A (en) * 2019-01-04 2019-04-16 芜湖启迪半导体有限公司 A kind of surface polishing method of hard material

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070023395A1 (en) * 2003-05-27 2007-02-01 Sumco Corporation Production method for semiconductor wafer
EP1758154A1 (en) * 2004-06-15 2007-02-28 Shin-Etsu Handotai Co., Ltd Silicon wafer manufacturing method and silicon wafer
CN101125416A (en) * 2007-09-14 2008-02-20 中国科学院上海光学精密机械研究所 Polishing method of zinc oxide single crystal substrate level substrate
TW201101377A (en) * 2009-06-19 2011-01-01 Shu-Ling Guo Manufacturing method for semiconductor integrated circuit wafer
CN102240967A (en) * 2011-06-24 2011-11-16 中国科学院福建物质结构研究所 Zinc oxide single crystal polishing technology for substrate of photoelectric device
CN102990503A (en) * 2012-11-09 2013-03-27 中国电子科技集团公司第四十六研究所 Polishing method applied to CdS wafer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070023395A1 (en) * 2003-05-27 2007-02-01 Sumco Corporation Production method for semiconductor wafer
EP1758154A1 (en) * 2004-06-15 2007-02-28 Shin-Etsu Handotai Co., Ltd Silicon wafer manufacturing method and silicon wafer
CN101125416A (en) * 2007-09-14 2008-02-20 中国科学院上海光学精密机械研究所 Polishing method of zinc oxide single crystal substrate level substrate
TW201101377A (en) * 2009-06-19 2011-01-01 Shu-Ling Guo Manufacturing method for semiconductor integrated circuit wafer
CN102240967A (en) * 2011-06-24 2011-11-16 中国科学院福建物质结构研究所 Zinc oxide single crystal polishing technology for substrate of photoelectric device
CN102990503A (en) * 2012-11-09 2013-03-27 中国电子科技集团公司第四十六研究所 Polishing method applied to CdS wafer

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
李军 等: "无损伤超光滑LBO晶体表面抛光方法研究", 《光学技术》 *
王国强 等: "KDP晶体超声辅助磨削的亚表面损伤研究", 《人工晶体学报》 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103882378A (en) * 2014-02-13 2014-06-25 同济大学 Method for preparing antireflection film having high laser-induced damage threshold on yttrium calcium oxytriborate (YCOB) crystals
CN103882378B (en) * 2014-02-13 2015-12-09 同济大学 A kind of preparation method of three boracic acid oxygen calcium yttrium crystal (YCOB) high laser damage threshold anti-reflection films
CN106826408A (en) * 2017-02-09 2017-06-13 同济大学 A kind of lbo crystal polishing method based on crystal oxidant
CN108161578A (en) * 2017-12-06 2018-06-15 江苏师范大学 A kind of processing method of elongated optical device end face
CN108818157A (en) * 2018-06-20 2018-11-16 天津大学 A kind of Nd:GGG crystrallographic plane optical element high-efficiency low-damage processing method
CN109590820A (en) * 2019-01-02 2019-04-09 中国科学院上海光学精密机械研究所 The processing method of superhard laser crystal surface roughness
CN110653681A (en) * 2019-09-29 2020-01-07 毛林才 Glass polishing process for liquid crystal display production
CN115181498A (en) * 2022-06-29 2022-10-14 大连理工大学 Polishing solution for KDP crystal and efficient grinding and polishing process
CN115181498B (en) * 2022-06-29 2024-10-25 大连理工大学 Polishing solution for KDP crystal and efficient grinding and polishing process

Also Published As

Publication number Publication date
CN103231302B (en) 2015-04-29

Similar Documents

Publication Publication Date Title
CN103231302B (en) Method for obtaining super-smooth surface low-sub-surface-damage crystal
CN100579723C (en) Laser glass mechanical chemical polishing method
CN102172879B (en) Method for processing soft and crisp LBO crystals based on consolidated abrasive polishing pad
CN103252708A (en) Sapphire substrate ultraprecision machining method based on fixed abrasive pad
Doi et al. Advances in CMP polishing technologies
JP3363587B2 (en) Method and apparatus for processing brittle material
CN106378671B (en) A kind of reduction process of large-sized CdS single-chips
CN103419118B (en) A kind of abrasive polishing method
CN104669454B (en) A kind of processing method of Sapphire mobile phone windows be protected screen with holes
WO2012164757A1 (en) Device for machining columnar member
WO2023116555A1 (en) Large-area quartz wafer grinding apparatus and method
JPS63120064A (en) Method of forming indentation in edge of semiconductor substrate in high-power semiconductor structure element
CN104827592A (en) Processing method of large-sized sapphire substrate slice
CN110052917A (en) A kind of sapphire polishing processing method based on concretion abrasive technology
CN108058066A (en) A kind of big method for processing surface of laser slab medium
CN112139859A (en) Method for anhydrous polishing of KDP crystal
CN108818157A (en) A kind of Nd:GGG crystrallographic plane optical element high-efficiency low-damage processing method
CN108237442B (en) Processing technology of ultrathin ceramic fingerprint identification sheet
CN114523340B (en) Complete grinding and polishing equipment and grinding and polishing method
CN109972204A (en) Ultra-thin super optical flat and the method for preparing the ultra-thin super optical flat
CN102407483A (en) Efficient nanometer precision thinning method for semiconductor wafer
TW201414575A (en) Method for polishing glass substrate
TW201743374A (en) Double-side polishing method and double-side polishing device
CN103934741B (en) Surface roughness reaches 0. 1 nano level design techniques
CN106736875A (en) A kind of processing method of sapphire dome

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150429

Termination date: 20200412