CN102533117A - Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging - Google Patents
Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging Download PDFInfo
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- CN102533117A CN102533117A CN2010105849257A CN201010584925A CN102533117A CN 102533117 A CN102533117 A CN 102533117A CN 2010105849257 A CN2010105849257 A CN 2010105849257A CN 201010584925 A CN201010584925 A CN 201010584925A CN 102533117 A CN102533117 A CN 102533117A
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Abstract
The invention provides chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging. The chemical mechanical polishing solution comprises grinding grains, one or more strong bases and water, wherein the mass concentration of the strong bases in the polishing solution is 2-50 percent by weight. The polishing solution is novel chemical mechanical polishing solution through which temperature of the polishing solution and temperature of a polishing machine can be simultaneously increased under the condition of the strong base so as to polish a silicon substrate at an ultrahigh speed; and the yield of TSV silicon polishing in 3D packaging is obviously improved.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid, relate in particular to a kind of chemical mechanical polishing liquid of TSV silicon polishing of the 3D of being used for encapsulation.
Background technology
In integrated circuit fabrication process, planarization has become with photoetching and etching is of equal importance and one of complementary indispensable gordian technique, and chemically machinery polished (CMP) technology be at present the most effectively, the most sophisticated planarization.Chemical-mechanical polishing system is the chemical-mechanical planarization technology that integrates technology such as cleaning, drying, online detection, end point determination, is the product of IC to miniaturization, multiple stratification, planarization, slimming development; Be that unicircuit is enhanced productivity, reduced cost, the indispensable technology of wafer overall situation planarization.
Along with development of science and technology, the modern consumption electronic product also need possess smaller and more exquisite volume and lower manufacturing cost requirement when various function is provided.To this, as the manufacturing basis of electronic product, semiconductor industry is faced with great challenge.
In order to satisfy the demand of electronic product development; Can 3D stacked package technology be regarded as the key that make high-effect chip with reduced size; And silicon through hole technology is to see through the mode of integrating the wafer storehouse with vertical conducting, and to reach the electric interconnection of chip chamber, the mode that this technology lets element integrate enters into the new stage of the area array formula interconnection (Area-array-like Interconnects) that utilizes the perforation channel; Let different chips or wafer can storehouse together; And realize faster speed, noise still less, and stronger function, this will impel electronic product can realize the application of novelty.Therefore 3D silicon through hole technology has just received and having paid close attention to widely and favor once appearance.
In unicircuit (integrated circuit, be called for short IC) ME, 3D encapsulation silicon through hole technology is through between chip and the chip, make vertical conducting between wafer and the wafer, realizes the state-of-the-art technology that interconnects between the chip.Different with IC encapsulation bonding in the past with the superimposing technique of using salient point; The encapsulation of 3D encapsulation silicon through hole technology has minimum size and weight; Can different types of technology be integrated in the single encapsulation, replace long 2D interconnection, reduce ghost effect and power consumption etc. with short perpendicular interconnection.This technology can be good at practicing thrift manufacturing cost, and effectively improves the degree of integration and the usefulness of IC system.
CMP is widely used in IC manufacturing field, and the polishing object comprises substrate, medium and interconnection material etc.Wherein metal CMP is the device and one of the critical process made that interconnects in the following chip manufacturing of 90 nanometers, is the research focus of inferior 90 nanometer era.Metallic copper, aluminium, tungsten are being applied to the interconnection on the IC-components more and more, must realize multilayer interconnection through chemically machinery polished, thereby the chemical mechanical polishing of metals liquid of developing a new generation lets the industry concern always.
Along with the continuous development of integrated circuit technique, also constantly seek new improvement for chemical machinery technology.Especially after the 3D of unicircuit encapsulation technology maturation, silicon through hole technology constantly obtains the more application more, and the improvement technological for polished silicon also more and more causes people's attention.Yet in polishing process, the 3D encapsulation technology usually entirely need be removed the above silicon of 10 microns, makes the selection of chemical mechanical polishing liquid claim.
At present; A series of chemical mechanical polishing liquids that are suitable for polished silicon have appearred; As: U.S. Pat 2002151252A1 discloses a kind of compsn and method that is used for silicon CMP; It provides plants with silicon oxide, and one or more and a kind of similar in the basic metal, ammonium salt, piperazine (piperazidine), quadrol are polished silicon substrate as the staple polishing fluid in the organic acid of EDTA; Patent US 20060014390A1 discloses a kind of finishing method that is used for silicon; It adopts the abrasive grains with 4.25 ~ 18.5wt%; The deionized water of 80 ~ 95wt%; One or more chemical mechanical polishing liquids in tensio-active agent and 0.05 ~ 1.5wt% Pottasium Hydroxide, sodium hydroxide, ammoniacal liquor or the aminated compounds as major ingredient, and cooperate specific glossing that silicon is polished; Patent US005860848A discloses a kind of method of using the electrolytical silicon CMP of polymer.Yet above-mentioned polishing fluid is used in the polishing of technology that 3D is sealed up for safekeeping and is had the insufficient situation of speed of significantly removing, and has a strong impact on productive rate.
Summary of the invention
The invention provides a kind of chemical mechanical polishing liquid of the 3D of being used for encapsulation TSV technology silicon polishing, in the polishing fluid staple, add highly basic, its purpose is to improve the polishing speed of silicon substrate in the 3D encapsulation TSV technology.
A kind of chemical mechanical polishing liquid that is used for the silicon through hole technology silicon polishing of 3D encapsulation of the present invention is realized its purpose through following technical scheme:
A kind of chemical mechanical polishing liquid that is used for 3D encapsulation TSV silicon polishing wherein, comprises water, abrasive grains, one or more highly basic; The mass concentration of said highly basic in said polishing fluid is 2 ~ 50wt%.
Above-mentioned chemical mechanical polishing liquid; Wherein, Said highly basic is Pottasium Hydroxide, sodium hydroxide, Lithium Hydroxide MonoHydrate, cesium hydroxide, tetramethyl-oxyammonia, tetraethyl-oxyammonia, tetrapropyl oxyammonia, ammoniacal liquor, azanol, quadrol, thanomin, one or more mixtures in the trolamine.
Above-mentioned chemical mechanical polishing liquid, wherein, said abrasive grains is one or more in silicon oxide, aluminum oxide, cerium oxide or the polymer beads.
Above-mentioned chemical mechanical polishing liquid, wherein, said polymer beads is Vilaterm, tetrafluoroethylene or its mixture.
Above-mentioned chemical mechanical polishing liquid, wherein, the diameter of said abrasive grains is 20 ~ 200nm.
Above-mentioned chemical mechanical polishing liquid, wherein, the diameter of said abrasive grains is 30 ~ 100nm.
Above-mentioned chemical mechanical polishing liquid wherein, also comprises tensio-active agent, stablizer, suppressor factor, sterilant or pH value regulator.
Above-mentioned chemical mechanical polishing liquid, wherein, said pH value regulator is potassium hydroxide solution or nitric acid.
Above-mentioned chemical mechanical polishing liquid, wherein, the concentration of said potassium hydroxide solution is 5 ~ 40wt%.
The application of a kind of chemical mechanical polishing liquid as claimed in claim 1 in 3D encapsulation TSV silicon polishing wherein, with board and comprise abrasive grains and the heating of 2 ~ 50wt% concentration alkaline polishing fluid, and is controlled at temperature in 60 ~ 90 ℃ of scopes and polishes.Adopt the advantage of the chemical mechanical polishing liquid of a kind of 3D of being used for encapsulation of the present invention TSV silicon polishing to be:
1. thereby polishing fluid of the present invention is the novel chemical mechanical polishing liquid that can under alkaline condition, improve polishing fluid and polishing machine platform temperature ultra-high speed ground polished silicon substrate simultaneously, significantly improves the productive rate of the TSV silicon polishing in the 3D encapsulation.
2. polishing fluid oxygen-free of the present invention agent, its composition is simpler, and glossing is more easy to control.
Embodiment
The invention provides a kind of chemical mechanical polishing liquid that is used to polish the TSV silicon substrate of 3D encapsulation.It is major ingredient that the present invention adopts with highly basic and abrasive grains, thereby under alkaline condition, improves the novel chemical mechanical polishing liquid of polishing fluid and polishing machine platform temperature ultra-high speed ground polished silicon substrate simultaneously, significantly improves the speed of the TSV silicon polishing in the 3D encapsulation.
Wherein said highly basic can be Pottasium Hydroxide, sodium hydroxide, Lithium Hydroxide MonoHydrate, cesium hydroxide, tetramethyl-oxyammonia, tetraethyl-oxyammonia, tetrapropyl oxyammonia, ammoniacal liquor, azanol, quadrol, thanomin or trolamine or the like.Above-mentioned highly basic can a kind of independent use, or multiplely is used by force.
Said abrasive grains can be silicon oxide, aluminum oxide, cerium oxide or polymer beads, described aggregated particles such as Vilaterm or tetrafluoroethylene etc.And be preferably silicon oxide.The diameter of these abrasive grains is controlled at 20 ~ 200nm, and most preferred scope is 30 ~ 100nm.
In said polishing fluid, described abrasive grains mass concentration is 0.5 ~ 10wt%.
Can also be in polishing fluid add again some additives commonly used as, tensio-active agent, stablizer, suppressor factor, sterilant or pH value regulator improve surperficial polishing performance with further.
Below our some specific embodiments of giving an example, thereby explanation adopts polishing fluid of the present invention for the remarkable effect of polishing speed that improves the TSV silicon substrate in the polishing 3D encapsulation.
Polishing fluid embodiment 1 ~ 8 of the present invention in the table 1 is polished silicon substrate respectively with the contrast polishing fluid.Polishing condition is identical, and burnishing parameters is following: the Logitech. polishing pad, and downward pressure 3 ~ 6psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 120s, chemical mechanical polishing liquid flow velocity 100mL/min, board and polishing fluid temperature are 60 ~ 90 ℃.Polish results is seen table 2.
Si?+6OH
-=SiO
3 2-?+3H
2O+4e；
2H
++2e=H
2。
In polishing process, silicon constantly is converted into soluble silicate by the highly basic dissolving, and polished then particle and polishing pad are taken away, and removes the silicon purpose thereby go round and begin again to reach; Above-mentioned being reflected at reacted quickening under the intensification condition, remove speed and also accelerate.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (10)
1. a chemical mechanical polishing liquid that is used for 3D encapsulation TSV silicon polishing is characterized in that, comprises water, abrasive grains, one or more highly basic; The mass concentration of said highly basic in said polishing fluid is 2 ~ 50wt%.
2. chemical mechanical polishing liquid according to claim 1; It is characterized in that; Said highly basic is Pottasium Hydroxide, sodium hydroxide, Lithium Hydroxide MonoHydrate, cesium hydroxide, tetramethyl-oxyammonia, tetraethyl-oxyammonia, tetrapropyl oxyammonia, ammoniacal liquor, azanol, quadrol, thanomin, one or more mixtures in the trolamine.
3. chemical mechanical polishing liquid according to claim 1 is characterized in that, said abrasive grains is one or more in silicon oxide, aluminum oxide, cerium oxide or the polymer beads.
4. chemical mechanical polishing liquid according to claim 3 is characterized in that, said polymer beads is Vilaterm, tetrafluoroethylene or its mixture.
5. chemical mechanical polishing liquid according to claim 1 is characterized in that, the diameter of said abrasive grains is 20 ~ 200nm.
6. chemical mechanical polishing liquid according to claim 5 is characterized in that, the diameter of said abrasive grains is 30 ~ 100nm.
7. chemical mechanical polishing liquid according to claim 1 is characterized in that, also comprises tensio-active agent, stablizer, suppressor factor, sterilant or pH value regulator.
8. chemical mechanical polishing liquid according to claim 7 is characterized in that, said pH value regulator is potassium hydroxide solution or nitric acid.
9. chemical mechanical polishing liquid according to claim 8 is characterized in that, the concentration of said potassium hydroxide solution is 5 ~ 40wt%.
10. the application of chemical mechanical polishing liquid as claimed in claim 1 in 3D encapsulation TSV silicon polishing; It is characterized in that; With board and comprise abrasive grains and 2 ~ 50wt% concentration alkaline polishing fluid heating, and temperature is controlled in 60 ~ 90 ℃ of scopes polishes.
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| CN2010105849257A CN102533117A (en) | 2010-12-13 | 2010-12-13 | Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging |
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| CN2010105849257A CN102533117A (en) | 2010-12-13 | 2010-12-13 | Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104759977A (en) * | 2014-01-06 | 2015-07-08 | 中国科学院微电子研究所 | Method and system for chemical-mechanical polishing of through silicon vias |
| CN113004798A (en) * | 2019-12-19 | 2021-06-22 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN114621683A (en) * | 2020-12-11 | 2022-06-14 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and use method thereof |
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| CN101752239A (en) * | 2008-12-10 | 2010-06-23 | 北京有色金属研究总院 | Polishing method for reducing liquid corrosion pits on chemical and mechanical polished surface of silicon substrate material |
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2010
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| CN1240223A (en) * | 1998-06-22 | 2000-01-05 | 不二见株式会社 | Polishing composition and surface treating composition |
| EP1274807A2 (en) * | 2000-03-31 | 2003-01-15 | Bayer Aktiengesellschaft | Polishing agent and method for producing planar layers |
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| CN104759977A (en) * | 2014-01-06 | 2015-07-08 | 中国科学院微电子研究所 | Method and system for chemical-mechanical polishing of through silicon vias |
| CN113004798A (en) * | 2019-12-19 | 2021-06-22 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN113004798B (en) * | 2019-12-19 | 2024-04-12 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN114621683A (en) * | 2020-12-11 | 2022-06-14 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution and use method thereof |
| WO2022121822A1 (en) * | 2020-12-11 | 2022-06-16 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution and method for using same |
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Application publication date: 20120704 |