CN104759977A - Method and system for chemical-mechanical polishing of through silicon vias - Google Patents
Method and system for chemical-mechanical polishing of through silicon vias Download PDFInfo
- Publication number
- CN104759977A CN104759977A CN201410004990.6A CN201410004990A CN104759977A CN 104759977 A CN104759977 A CN 104759977A CN 201410004990 A CN201410004990 A CN 201410004990A CN 104759977 A CN104759977 A CN 104759977A
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- Prior art keywords
- polishing
- silicon
- polishing fluid
- heating
- chemical
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- 238000005498 polishing Methods 0.000 title claims abstract description 111
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000012530 fluid Substances 0.000 claims description 57
- 238000010438 heat treatment Methods 0.000 claims description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000008236 heating water Substances 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 239000010949 copper Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a method and system for chemical-mechanical polishing of through silicon vias. The method comprises the step of carrying out chemical-mechanical polishing on metal layers of the through silicon vias through heated polishing solutions. According to the invention, the polishing solution used in chemical-mechanical polishing is heated for improving the ability of the polishing solutions to oxidize the metal layers of the through silicon vias, and then the rate of removing the metal layers can be increased.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of cmp method of silicon through hole and system.
Background technology
Silicon through hole (Though Silicon Via, TSV) technique is the technology integrated by multiple Chip Vertical, normally after the silicon through hole of wafer realizes, metallic copper is used to carry out electroplating deposition to silicon through hole, then undertaken planarized by chemically mechanical polishing (CMP), form the interconnection of silicon via metal copper cash.
Because the hole depth of silicon through hole is usually at more than 30um, being far longer than the thickness of the copper interconnecting line in integrated circuit, needing to electroplate more copper in silicon via process, also needing the grinding when carrying out planarized to remove more copper.
Chemically mechanical polishing is that silicon through hole carries out planarized common method, how to improve the removal speed of metallic copper in silicon through hole, and the production capacity improving copper CMP is one of major issue needing in silicon via process to solve.
Summary of the invention
Object of the present invention is intended at least solve above-mentioned technological deficiency, provides a kind of cmp method and device of silicon through hole, improves the removal speed to metal level.。
The invention provides a kind of cmp method of silicon through hole, comprising: utilize the polishing fluid after heating to carry out the chemically mechanical polishing of the metal level of silicon through hole.
Preferably, the heating means of polishing fluid are for carry out heating water bath or Resistant heating by polishing fluid delivery line.
Preferably, the temperature range of the polishing fluid after heating is 25-70 DEG C.
Preferably, also step is comprised: adopt normal temperature polishing liquid to carry out the barrier layer of silicon through hole and the chemically mechanical polishing of/adhesion layer.
In addition, present invention also offers a kind of chemical-mechanical polishing system of silicon through hole, comprise: polishing solution supplying system, polishing fluid heating system and chemical mechanical polishing apparatus, be delivered to chemical mechanical polishing apparatus after the polishing fluid that polishing solution supplying system provides by polishing fluid heating system heats.
Preferably, described polishing fluid heating system is water bath heating system, and the polishing fluid delivery line of polishing solution supplying system is arranged in water bath heating system.
Preferably, polishing fluid delivery line is arranged in water bath heating system after checking and regulating.
Preferably, described polishing fluid heating system is Resistant heating system, and described Resistant heating system is wound on the outer wall of polishing fluid delivery line of polishing solution supplying system.
Preferably, described Resistant heating system is also provided with heat-insulation layer.
Preferably, the temperature range of the polishing fluid after heating is 25-70 DEG C.
The cmp method of the silicon through hole that the embodiment of the present invention provides and device, heat the polishing fluid used in chemically mechanical polishing, improves the oxidability of polishing fluid to the layer on surface of metal of silicon through hole, and then improve the removal speed to metal level.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1-3 is the cross section structure schematic diagram of the manufacture process forming silicon through hole according to embodiment of the present invention method;
Fig. 4 is the structural representation of the chemical-mechanical polishing system of silicon through hole according to the embodiment of the present invention.
Detailed description of the invention
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
Chemically mechanical polishing is that silicon through hole carries out planarized common method, how to improve the removal speed of metallic copper in silicon through hole, and the production capacity improving copper CMP is one of major issue needing in silicon via process to solve.For this reason, the invention provides a kind of cmp method of silicon through hole, utilize the polishing fluid after heating to carry out the chemically mechanical polishing of the metal level of silicon through hole.
In chemical mechanical milling tech, polishing fluid is by the surface oxidation of metal level, then by the mechanical grinding effect of the abrasive grains in polishing fluid and grinding pad, the oxide layer of metal surface is removed, the metal level come out then polished liquid oxidation is then removed, so repeatedly, the grinding realizing metal level is removed.The present invention improves its oxidability to the layer on surface of metal of silicon through hole by improving the temperature of polishing fluid, greatly accelerates polishing fluid to the oxidation reaction speed of metal level, and then improves the grinding rate to metal material.
For a better understanding of the present invention, be described in detail below with reference to specific embodiment.
First, in substrate 100, form through hole 400, and barrier layer 500 and metal level 600, shown in figure 1.
Normally, substrate 100 is formed with device 300, and is coated with dielectric layer 200, through hole 400 runs through whole substrate 100 and dielectric layer 200.
Metal level can be the metal materials such as Cu, Al, W, and barrier layer is spread in substrate for preventing metal level, can be Ta, Ti etc.In the present embodiment, metal level is Cu, and barrier layer is Ti.In other embodiments, all right first deposit adhesion layer or only deposit adhesion layer, to strengthen the binding ability of metal level and substrate.
Then, the polishing fluid after heating is utilized to carry out the chemically mechanical polishing of metal level 600, shown in figure 2.
In an embodiment of the present invention, the heating means of polishing fluid are for carry out heating water bath or Resistant heating by polishing fluid delivery line.Heating water bath is immersed in water receptacle by the delivery line of polishing fluid, and this water receptacle can be the adjustable constant-temperature enclosed water receptacle of temperature, and the temperature range of the polishing fluid after heating can be 25-70 DEG C.In order to effectively improve the heating effect of polishing fluid, the length of polishing fluid delivery line can be lengthened, and carry out checking and regulating and be placed in water bath containers, to increase heated length, improve heating effect.Resistant heating heats by the outer wall of polishing fluid delivery line, resistance wire can be wrapped on the outer wall of polishing fluid delivery line, and this resistance wire can be controllable temperature and have heat-insulation layer.
In the present embodiment, the polishing fluid of heating is utilized to carry out rough polishing fast to the thick film of Ni metal.
Then, normal temperature polishing liquid is adopted to carry out the barrier layer of silicon through hole and the chemically mechanical polishing of/adhesion layer 500, shown in figure 3.
Normally, barrier layer and adhesion layer opposing metallic layer have thinner thickness, and after the honed metal level of Fast Coarse, still adopt normal temperature polishing liquid to carry out polishing grinding, namely polishing fluid did not carry out any heating and cooling means, are the polishing fluid under room temperature.This time polishing is until substrate surface exposes.
So far, the silicon through hole of the embodiment of the present invention is defined.
In addition, present invention also offers the chemical-mechanical polishing system for above-mentioned polishing, shown in figure 4, comprising:
Polishing solution supplying system, polishing fluid heating system and chemical mechanical polishing apparatus, be delivered to chemical mechanical polishing apparatus after the polishing fluid that polishing solution supplying system provides by polishing fluid heating system heats.
In an embodiment of the present invention, described polishing fluid heating system can be water bath heating system, and the polishing fluid delivery line of polishing solution supplying system is arranged in water bath heating system.This water bath heating system can be the adjustable constant-temperature enclosed water receptacle of temperature.In order to effectively improve the heating effect of polishing fluid, the length of polishing fluid delivery line can be lengthened, and carry out checking and regulating and be placed in water bath containers, to increase heated length, improve heating effect.
In an embodiment of the present invention, described polishing fluid heating system can also be Resistant heating system, and described Resistant heating system is wound on the outer wall of polishing fluid delivery line of polishing solution supplying system.In order to improve its heat insulation effect, this Resistant heating system also has heat-insulation layer, and is the resistance wire of controllable temperature.Preferably, the temperature range of the polishing fluid after heating can be 25-70 DEG C.
The cmp method of the silicon through hole that the embodiment of the present invention provides and device, heat the polishing fluid used in chemically mechanical polishing, improves the oxidability of polishing fluid to the layer on surface of metal of silicon through hole, and then improve the removal speed to metal level.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. a cmp method for silicon through hole, is characterized in that, comprising:
The polishing fluid after heating is utilized to carry out the chemically mechanical polishing of the metal level of silicon through hole.
2. the cmp method of silicon through hole according to claim 1, is characterized in that, the heating means of polishing fluid are for carry out heating water bath or Resistant heating by polishing fluid delivery line.
3. the cmp method of silicon through hole according to claim 1 and 2, is characterized in that, the temperature range of the polishing fluid after heating is 25-70 DEG C.
4. the cmp method of silicon through hole according to claim 1, is characterized in that, also comprise step: adopt normal temperature polishing liquid to carry out the barrier layer of silicon through hole and the chemically mechanical polishing of/adhesion layer.
5. the chemical-mechanical polishing system of a silicon through hole, it is characterized in that, comprise: polishing solution supplying system, polishing fluid heating system and chemical mechanical polishing apparatus, be delivered to chemical mechanical polishing apparatus after the polishing fluid that polishing solution supplying system provides by polishing fluid heating system heats.
6. the chemical-mechanical polishing system of silicon through hole according to claim 5, is characterized in that, described polishing fluid heating system is water bath heating system, and the polishing fluid delivery line of polishing solution supplying system is arranged in water bath heating system.
7. the chemical-mechanical polishing system of silicon through hole according to claim 6, is characterized in that, polishing fluid delivery line is arranged in water bath heating system after checking and regulating.
8. the chemical-mechanical polishing system of silicon through hole according to claim 5, is characterized in that, described polishing fluid heating system is Resistant heating system, and described Resistant heating system is wound on the outer wall of polishing fluid delivery line of polishing solution supplying system.
9. the chemical-mechanical polishing system of silicon through hole according to claim 8, is characterized in that, described Resistant heating system is also provided with heat-insulation layer.
10. the chemical-mechanical polishing system of the silicon through hole according to any one of claim 5-9, is characterized in that, the temperature range of the polishing fluid after heating is 25-70 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410004990.6A CN104759977A (en) | 2014-01-06 | 2014-01-06 | Method and system for chemical-mechanical polishing of through silicon vias |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410004990.6A CN104759977A (en) | 2014-01-06 | 2014-01-06 | Method and system for chemical-mechanical polishing of through silicon vias |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104759977A true CN104759977A (en) | 2015-07-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410004990.6A Pending CN104759977A (en) | 2014-01-06 | 2014-01-06 | Method and system for chemical-mechanical polishing of through silicon vias |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104759977A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105666312A (en) * | 2016-01-21 | 2016-06-15 | 苏州新美光纳米科技有限公司 | Rapid chip polishing device and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1702965A2 (en) * | 2005-03-17 | 2006-09-20 | Fuji Photo Film Co., Ltd. | Metal chemical mechanical polishing solution and polishing method |
| CN102064134A (en) * | 2010-12-03 | 2011-05-18 | 中国科学院上海微系统与信息技术研究所 | Resistor conversion storage chip with three-dimensional structure and fabricating method thereof |
| CN102533117A (en) * | 2010-12-13 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging |
| JP2013030534A (en) * | 2011-07-27 | 2013-02-07 | Elpida Memory Inc | Semiconductor device and method of manufacturing the same |
| CN103182674A (en) * | 2011-12-30 | 2013-07-03 | 无锡华润上华科技有限公司 | WCMP (wolfram chemical mechanical polishing) grinding device and method for improving WCMP grinding rate |
-
2014
- 2014-01-06 CN CN201410004990.6A patent/CN104759977A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1702965A2 (en) * | 2005-03-17 | 2006-09-20 | Fuji Photo Film Co., Ltd. | Metal chemical mechanical polishing solution and polishing method |
| CN102064134A (en) * | 2010-12-03 | 2011-05-18 | 中国科学院上海微系统与信息技术研究所 | Resistor conversion storage chip with three-dimensional structure and fabricating method thereof |
| CN102533117A (en) * | 2010-12-13 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging |
| JP2013030534A (en) * | 2011-07-27 | 2013-02-07 | Elpida Memory Inc | Semiconductor device and method of manufacturing the same |
| CN103182674A (en) * | 2011-12-30 | 2013-07-03 | 无锡华润上华科技有限公司 | WCMP (wolfram chemical mechanical polishing) grinding device and method for improving WCMP grinding rate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105666312A (en) * | 2016-01-21 | 2016-06-15 | 苏州新美光纳米科技有限公司 | Rapid chip polishing device and method |
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Application publication date: 20150708 |
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