CN104802071A - Chemical mechanical polishing method - Google Patents

Chemical mechanical polishing method Download PDF

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Publication number
CN104802071A
CN104802071A CN201410035898.6A CN201410035898A CN104802071A CN 104802071 A CN104802071 A CN 104802071A CN 201410035898 A CN201410035898 A CN 201410035898A CN 104802071 A CN104802071 A CN 104802071A
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China
Prior art keywords
polishing
wafer
particle
sio
polishing fluid
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CN201410035898.6A
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王贤超
奚民伟
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CN201410035898.6A priority Critical patent/CN104802071A/en
Publication of CN104802071A publication Critical patent/CN104802071A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention provides a chemical mechanical polishing method. The chemical mechanical polishing method comprises the following steps: step S1, putting a to-be-polished wafer on a first polishing pad, performing polishing and a first thinning technology for obtaining a first wafer; step S2, putting the first wafer on a second polishing pad, performing a second thinning technology and a first cleaning technology for obtaining a second wafer; and step S3, putting the second wafer on a third polishing pad, and performing a second cleaning technology. The provided method solves the technical problem that the residue is hard to remove in the flattening process of the wafer and the wafer polishing efficiency is low due to the fact that the residue is hard to remove. After polishing by the provided method, the defect on the wafer surface is reduced by 86%.

Description

Cmp method
Technical field
The application's semiconductor integrated circuit manufacture technology field, more specifically, relates to a kind of cmp method.
Background technology
In the manufacture process of integrated circuit, along with the increase with the metal interconnected number of plies of reducing of characteristic size, also more and more higher to the requirement of wafer surface flatness.At present, chemically mechanical polishing is the most effective global planarizartion technology.Chemically mechanical polishing (CMP) adopts the rubbing head rotated to clamp wafer, and it is pressed on the polishing pad of rotation with certain pressure, the polishing fluid be made up of abrasive particle and chemical solution flows between wafer and polishing pad, and crystal column surface realizes planarized under chemistry and mechanical acting in conjunction.After polishing, usually with cleaning fluid, wafer is cleaned, to remove the polishing slurries particle remaining in crystal column surface.
Existing CMP adopts SiO usually 2polishing fluid carries out polishing to wafer, and its concrete steps are as follows: first, and the first polishing pad carries out rough polishing to wafer, removes the rough surface of wafer; Then, the second polishing pad is utilized to carry out polishing to wafer thinning; Finally, the 3rd polishing pad carries out polished and cleaned to wafer, remove the defect of crystal column surface.In this technical process, removing the rough surface of wafer needs 30-90 second, carries out thinningly needing 60-90 second, and remove the time that wafer surface defects needs to reach 150 seconds to wafer.Polishing efficiency due to wafer depends on the operation stage that polishing time is the longest, and therefore, the polishing efficiency of wafer is very low.
In addition, SiO is being utilized 2after polishing fluid carries out polishing to wafer, partially polished liquid can be stayed on wafer, forms residue defect.If these defects are not removed in cleaning quickly and effectively, these defects can continue corrosion at crystal column surface or finally form the extremely difficult chemical bonding removed along with the prolongation of time changes chemisorbed into by physical absorption, and residue defect can affect the performance of chip.
Summary of the invention
The residue defect existed in planarization process to solve existing wafer is difficult to the inefficient technical problem of polishing wafer removed and cause, this application provides a kind of cmp method, the time of wafer cleaning polishing is reasonably allocated in other glossings stage by the method, solves the residue defect difficulty removal that wafer exists in planarization process and the inefficient technical problem of polishing wafer caused thereof.The cmp method that the application provides can be applicable to the polishing of metal oxide, polysilicon, copper and dielectric material etc., and is applicable to the polishing of 0.13 micron, 0.11 micron and 90 nanometer processing procedure wafers.
This application provides a kind of cmp method, the method comprises: step S1, is placed in by polished wafer on the first polishing pad, sequentially implements glossing and the first reduction process, obtains the first wafer; Step S2, is placed on the second polishing pad by described first wafer, sequentially implements the second reduction process and the first cleaning, obtains the second wafer; Step S3, is placed in described second wafer on the 3rd polishing pad, implements the second cleaning.
Further, above-mentioned steps S1 comprises: be placed in by polished wafer on the first polishing pad, the first polishing fluid is added drop-wise to polished wafer, carry out machine glazed finish; Drip the second polishing fluid and implement the first reduction process, obtain the first wafer.The enforcement time of this step S1 is 60-90 second.More preferably, the enforcement time of above-mentioned machine glazed finish is 20-30 second, and the enforcement time of the first reduction process is 40-60 second.
Further, the grinding agent of the first polishing fluid is Si0 2particle, SiO 2mean particle size is 50-100 nanometer, SiO 2the concentration of particle is 10%-50%; The grinding agent of the second polishing fluid is gluey Si0 2particle, SiO 2the average grain diameter of particle is the SiO of 20-80 nanometer, described glue 2granule density is 5%-30%.
Further, above-mentioned steps S2 comprises: be placed in by the first wafer on the second polishing pad, is added drop-wise on the first wafer by the 3rd polishing fluid and implements the second reduction process; Drip the 4th polishing fluid and implement the first cleaning, obtain the second wafer; The enforcement time of step S2 is 60-90 second.Preferably, the time of implementing the second reduction process is 20-30 second, and the time of implementing the first cleaning is 40-60 second.
Further, the grinding agent of the 3rd polishing fluid is gluey Si0 2particle, SiO 2the average grain diameter of particle is 20-80 nanometer, and granule density is 5%-30%; The grinding agent of the 4th polishing fluid is Si0 2particle, SiO 2mean particle size is 50-100 nanometer, and granule density is 5%-30%.Preferably, containing oxidant in the 4th polishing fluid, more electedly, the oxidant added is H 2o 2.
Further, step S3 comprises: be placed in by the second wafer on the 3rd polishing pad, and drip the 5th polishing fluid and implement the second cleaning, the enforcement time of step S3 is 60-90 second.
Further, the grinding agent of the 5th polishing fluid is Si0 2particle, described SiO 2mean particle size is 50-100 nanometer, SiO 2granule density is 5%-30%.Preferably, containing oxidant in the 5th polishing fluid, more electedly, the oxidant of employing is H 2o 2.
As can be seen from technique scheme, the cmp method that the application provides utilizes and adopt different polishing fluids on same polishing pad, thus the time that is wafer is thinning, cleaning was reasonably allocated in other glossings stage, solve the residue defect difficulty removal that wafer exists in planarization process and the inefficient technical problem of polishing wafer caused thereof.
Except object described above, feature and advantage, the application also has other object, feature and advantage.Below with reference to figure, the application is described in further detail.
Accompanying drawing explanation
Accompanying drawing form this description a part, for understanding the application further, accompanying drawing shows the preferred embodiment of the application, and be used for the principle of the application is described together with description.
Fig. 1 shows the schematic flow sheet of the cmp method that the application provides.
Detailed description of the invention
Below, the exemplary embodiment according to the application is described with reference to the accompanying drawings in more detail.But these exemplary embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, provide these embodiments be in order to make the application open thorough and complete, and the design of these exemplary embodiments is fully conveyed to those of ordinary skill in the art.But the multitude of different ways that the application can be defined by the claims and cover is implemented.
From background technology, there is the inefficient technical problem of polishing wafer that residue defect is difficult to remove and cause in existing wafer in planarization process.Present inventor studies for the problems referred to above, propose to adopt different polishing fluids on same polishing pad, thus the time that is wafer is thinning, cleaning polishing is reasonably allocated in other operation stages, solve the inefficient technical problem of polishing wafer that residue defect that wafer exists in planarization process is difficult to remove and cause.
The cmp method that the application provides comprises the following steps: step S1, is placed in by polished wafer on the first polishing pad, implements glossing and the first reduction process, obtains the first wafer; Step S2, is placed in the first wafer on the second polishing pad, implements the second reduction process and the first cleaning, obtains the second wafer; Step S3, is placed in the second wafer on the 3rd polishing pad, implements the second cleaning.
The application breaks the processing step of conventional cmp method, creatively on same polishing pad, adopting different polishing fluids, thus the time that is wafer is thinning and cleaning is reasonably allocated in the different glossing stage, not only increase polishing efficiency, and owing in succession implementing two kinds for the treatment of process on same polishing pad, the stop of different polishing fluid on wafer is all effectively shortened.Due to shorter residence time, decrease residue is converted into chemisorbed probability by physical absorption, therefore in planarization process, residue defect can significantly reduce; In addition, because in succession implement two kinds for the treatment of process on same polishing pad, make the enforcement time of originally most farm labourer's skill consuming time be fairly distributed like this, the polishing efficiency due to wafer depends on the operation stage that polishing time is the longest, and therefore whole polishing efficiency is greatly improved.
In order to further illustrate the cmp method that the application provides, set forth the method further below in conjunction with Fig. 1.
As shown in Figure 1, first, implementation step S1, is placed in polished wafer on the first polishing pad, implements glossing and the first reduction process, obtains the first wafer.Concrete steps can comprise: be fixed on by polished wafer on the first polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, first polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, and then machine glazed finish is carried out to wafer frontside, to remove the matsurface of wafer; Second polishing fluid is dropped on the first polishing pad, chemical etching is carried out to wafer frontside, realize the part thinning (the first reduction process) of wafer.Preferably, the whole implementation time of step S1 is 60-90 second.More preferably, the time of carrying out machine glazed finish is 20-30 second, and the time of carrying out the first reduction process is 40-60 second.On grinding head, the rotating speed of applied pressure, grinding head and the flow velocity of polishing fluid are prior art, no longer describe in detail at this.Preferably, on grinding head, applied pressure is 220-270g/cm 2, the rotating speed of grinding head is 60-70r/min, and the flow velocity of the first polishing fluid is 130-160ml/min.
The polishing fluid that the application adopts is Si0 well-known to those skilled in the art 2polishing fluid can be the polishing fluid of the various models of market sale.Preferably, in step sl, the grinding agent of the first polishing fluid of glossing employing is Si0 2particle, the mechanical lapping efficiency of the first polishing fluid should be greater than chemical grinding efficiency.Applicant find, if in this polishing fluid hard Si0 2granule content is higher, particle size is larger, can make Si0 2the mechanical abrasive action of particle to wafer rough surface is more stable, thus makes polishing speed more stable.Preferably, in the detailed description of the invention that the application provides, SiO 2the average grain diameter of particle is 50-100 nanometer, SiO 2granule density is 10%-50%.Granule density and size are limited in above-mentioned scope, speed and the stability of polishing can be improved, the effect of rough surface finish and polishing is also increased.And for the second polishing fluid, chemical grinding efficiency should be greater than the efficiency of mechanical lapping.Therefore the grinding agent of the second polishing fluid is preferably gluey Si0 2particle, more preferably, SiO 2the average grain diameter of particle is 20-80 nanometer, SiO 2granule density is 5%-30%.Si0 2colloidal particle can not cause physical damnification to device.Mainly there is chemical reaction in the first reduction process, its course of reaction comprise be bonded at the crystal column surface that polishing machine coils atom and polishing machine lower wall on be soaked with polishing fluid the polishing fluid that adsorbs of porous polishing cloth in the material such as oxidant, catalyst react under a certain design temperature.Upper lower burrs high-speed reverse operates, and polishing fluid continuous-flow, the product of crystal column surface is constantly peeled off, and new polishing fluid supplements into, and product is pulled away with polishing fluid.Newly exposed atom is oxidized again, and product is stripped again, so circulates, and goes round and begins again.The atom generation chemical reaction of oxidant, catalyst etc. and crystal column surface in polishing fluid; Product departs from crystal column surface.
By describing above and can finding out, the first polishing pad is implemented machine glazed finish and the first reduction process simultaneously, compared with traditional glossing, the time shorten of machine glazed finish 10-80 second, the time of staying of the first polishing fluid on wafer also will shorten greatly.
Then, implementation step S2, is placed in the first wafer on the second polishing pad, implements the second reduction process and the first cleaning, obtains the second wafer.Concrete steps can comprise: be fixed on by the first wafer on the second polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 3rd polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, etching carried out to wafer frontside thinning, to reach the target thickness of wafer; 4th polishing fluid is dropped on the second polishing pad, chemical machinery cleaning is carried out to wafer frontside, to remove the segmental defect of crystal column surface.Preferably, the whole implementation time of step S2 is 60-90 second.More preferably, the enforcement time of the second reduction process is 20-30 second; The enforcement time of the first cleaning is 40-60 second.On grinding head, the rotating speed of applied pressure, grinding head and the flow velocity of polishing fluid are prior art, no longer describe in detail at this.
First reduction process and the second reduction process are identical in reaction principle, so the 3rd polishing fluid can be the thinning etching liquid identical with the second polishing fluid, also can be different thinning etching liquids.Preferably, the grinding agent of the 3rd polishing fluid of the second reduction process employing is gluey Si0 2particle, SiO 2the average grain diameter of particle is 20-80 nanometer, SiO 2granule density is 5%-30%.First cleaning remains in polishing fluid on wafer and etch residue to wash in etching thinning process.Preferably, the grinding agent of the 4th polishing fluid is Si0 2particle, SiO 2the average grain diameter of particle is 50-100 nanometer, SiO 2granule density is 5%-30%.
As can be seen from this step, because reduction process is divided in order to the first thinning stage and the second thinning stage, so be processing time of 60-90 second divide into 40-60 second and 20-30 two thinning periods of second by total duration, not only the processing time of each period shortens, nor can have influence on overall thinning effect.
Finally, implementation step S3, is placed in the second wafer on the 3rd polishing pad, implements the second cleaning, complete the CMP process that the application provides.Concrete steps can comprise: be fixed on by above-mentioned wafer on the 3rd polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 5th polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, utilize the 5th polishing fluid to carry out chemical machinery cleaning to wafer frontside, complete the removal of wafer surface defects.Preferably, the time of the second cleaning is 60-90 second.The technological principle of the second cleaning and the first cleaning is identical, so the 4th polishing fluid can be identical with the 5th polishing fluid, and also can be different.Preferably, the grinding agent of the 5th polishing fluid that this cleaning adopts is hydrophilic Si0 2particle, wherein SiO 2the average grain diameter of particle is 50-100 nanometer, described SiO 2granule density is 5%-30%.On grinding head, the rotating speed of applied pressure, grinding head and the flow velocity of polishing fluid are prior art, no longer describe in detail at this.As can be seen from the above description, apply for the cleaning of 150 seconds consuming time to be divided into the first wash phase and second stage, the processing time of each wash phase shortens, thus the processing time of whole glossing is significantly shortened.
In addition, oxidant can also be contained, such as Fe (NO inside the 4th polishing fluid adopted in the first cleaning and the second cleaning or the 5th polishing fluid 3) 3, H 2o 2or the mixture of the two.Oxidant can become very thin layer of silicon dioxide (thickness <1 nanometer) silicon surface oxidation, and this layer of very thin silica has hydrophily, thus the contact area increased between polishing fluid and crystal column surface, and the removal ability of polishing fluid to hangover on wafer surface is increased.After the physical grinding effect of certain hour, the polishing fluid being attached on silicon face remains and is completely removed, and the defect of crystal column surface is also removed simultaneously.And the existing polishing fluid for cleaning is deionized water DIW, deionized water can not by wafer surface oxidation, therefore can not make silicon face become repellency, is difficult to remove polishing fluid and remains.
As can be seen from above step, because the application adopts different polishing fluids on same polishing pad, implement different glossing steps, thus the polishing of wafer, thinning and scavenging period are reasonably allocated in other glossings stage, obviously shorten each process step time, all be no more than 90 seconds in the processing time of each polishing pad, thus substantially increase polishing efficiency.And owing in succession implementing two kinds for the treatment of process on same polishing pad, the stop of different polishing fluid on wafer is all effectively shortened, comparatively obstinate residue cannot be formed, therefore efficiently solve the problem of the residue defect difficulty removal that wafer exists in planarization process.
In addition, in actual production, after n-th batch of wafer is ground on the first grinding pad, be placed on while the second grinding pad carries out grinding, the grinding pad of (n+1)th batch can be placed on the first grinding pad and grind; And while n-th batch of wafer be placed in the 3rd grinding pad grinds, the second grinding pad grinds the wafer of (n+1)th batch, and the first grinding pad starts the wafer grinding the n-th+2 batches.
The cmp method will being further illustrated the application by embodiment and provide below.But, the cmp method that the application provides is not restricted to the silicon chip that following examples provide, the method that the polishing of the metal oxide seen in existing semiconductor IC industry, polysilicon, copper and dielectric material etc. can adopt the application to provide.
Embodiment 1
Grinding agent in the first polishing fluid that the present embodiment adopts is Nano-meter SiO_2 2particle, SiO 2the average grain diameter of particle is 100 nanometers, SiO 2granule density is 50%, and basic component is KOH, and pH value is 11; Grinding agent in second polishing fluid is gluey SiO 2particle, SiO 2the particle diameter of particle is 80 nanometers, SiO 2the concentration of particle is 30%, and basic component is KOH, and pH value is 9.5; Grinding agent in 3rd polishing fluid is gluey SiO 2particle, SiO 2the particle diameter of particle is 60 nanometers, SiO 2the concentration of particle is 20%, and basic component is KOH, and pH value is 9.0; Four, the grinding agent in the 5th polishing fluid is hydrophily SiO 2, SiO 2the particle diameter of particle is 100 nanometers, SiO 2the concentration of particle is 38%, and basic component is KOH, and pH value is 10, containing the H of 0.5% 2o 2.
First, polished silicon substrate is fixed on the first polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, first polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, and then machine glazed finish is carried out to silicon substrate front, its process conditions are: on grinding head, applied pressure is 260g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 200ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 20 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.2 micron, and polishing speed is 0.6 [mu.
Then, dropped in by the second polishing fluid on the first polishing pad, carry out chemical etching to silicon substrate front, the part realizing silicon substrate is thinning, and its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 200ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 40 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.7 micron, and polishing speed is 1 [mu.
Next, above-mentioned silicon substrate is fixed on the second polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 3rd polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, carry out etching to silicon substrate front thinning, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 200ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 20 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.3 micron, and polishing speed is 1 [mu.
Next, drop on the second polishing pad by the 4th polishing fluid, carry out chemical machinery cleaning to wafer frontside, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 240ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 40 seconds.
Finally, above-mentioned silicon substrate is fixed on the 3rd polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 5th polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, utilize the 5th polishing fluid to carry out chemical machinery cleaning to silicon substrate front, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 240ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 60 seconds.Carry out defects detection by SEM SEM to full sheet, index detects the defect of >0.2um size.After measured, after polished and cleaned, defect decreases 90%.
Embodiment 2
Grinding agent in the first polishing fluid that the present embodiment adopts is Nano-meter SiO_2 2particle, SiO 2the average grain diameter of particle is 50 nanometers, SiO 2granule density is 10%, and basic component is KOH, and pH value is 11; Grinding agent in second and third polishing fluid is gluey SiO 2particle, SiO 2the particle diameter of particle is 20 nanometers, SiO 2the concentration of particle is 5%, and basic component is KOH, and pH value is 9.5; Grinding agent in 4th polishing fluid is SiO 2, SiO 2the average grain diameter of particle is 70 nanometers, SiO 2the concentration of particle is 5%, and basic component is KOH, and pH value is 10; Grinding agent in 5th polishing fluid is hydrophily SiO 2, SiO 2the particle diameter of particle is 50 nanometers, SiO 2the concentration of particle is 5%, and basic component is KOH, and pH value is 10, containing the H of 0.5% 2o 2.
First, polished silicon substrate is fixed on the first polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, first polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, and then machine glazed finish is carried out to silicon substrate front, its process conditions are: on grinding head, applied pressure is 260g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 200ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 30 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.2 micron, and polishing speed is 0.4 [mu.
Then, dropped in by the second polishing fluid on the first polishing pad, carry out chemical etching to silicon substrate front, the part realizing silicon substrate is thinning, and its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 200ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 60 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.6 micron, and polishing speed is 0.6 [mu.
Next, above-mentioned silicon substrate is fixed on the second polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 3rd polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, carry out etching to silicon substrate front thinning, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 200ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 30 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.3 micron, and polishing speed is 1 [mu.
Next, drop on the second polishing pad by the 4th polishing fluid, carry out chemical machinery cleaning to wafer frontside, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 240ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 60 seconds.
Finally, above-mentioned silicon substrate is fixed on the 3rd polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 5th polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, utilize the 5th polishing fluid to carry out chemical machinery cleaning to silicon substrate front, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 240ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 90 seconds.Carry out defects detection by SEM SEM to full sheet, index detects the defect of >0.2um size.After measured, after polished and cleaned, defect reduces 85%.
Embodiment 3
Grinding agent in the first polishing fluid that the present embodiment adopts is Nano-meter SiO_2 2particle, SiO 2grain diameter is 80 nanometers, SiO 2granule density is 30%, and basic component is KOH, and pH value is 11; Grinding agent in second and third polishing fluid is gluey SiO 2particle, SiO 2the particle diameter of particle is 50 nanometers, SiO 2the concentration of particle is 20%, and basic component is KOH, and pH value is 9.5; Grinding agent in fourth, fifth polishing fluid is hydrophily SiO 2, SiO 2the particle diameter of particle is 80 nanometers, SiO 2the concentration of particle is 20%, and basic component is KOH, and pH value is 10, containing the Fe (NO of 1% 3) 3.
First, polished silicon substrate is fixed on the first polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, first polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, and then machine glazed finish is carried out to silicon substrate front, its process conditions are: on grinding head, applied pressure is 260g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 200ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 30 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.15 micron, and polishing speed is 0.3 [mu.
Then, dropped in by the second polishing fluid on the first polishing pad, carry out chemical etching to silicon substrate front, the part realizing silicon substrate is thinning, and its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 300ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 50 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.7 micron, and polishing speed is 0.8 [mu.
Next, above-mentioned silicon substrate is fixed on the second polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 3rd polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, carry out etching to silicon substrate front thinning, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 300ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 30 seconds.After measured, the thickness of the silicon materials that polishing is removed is 0.4 micron, and polishing speed is 0.8 [mu.
Next, drop on the second polishing pad by the 4th polishing fluid, carry out chemical machinery cleaning to wafer frontside, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 240ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 50 seconds.
Finally, above-mentioned silicon substrate is fixed on the 3rd polishing pad of chemically mechanical polishing instrument, just facing to polishing pad, 5th polishing fluid is dropped on polishing pad, grinding head applies certain pressure, and make it rotate, utilize the 5th polishing fluid to carry out chemical machinery cleaning to silicon substrate front, its process conditions are: on grinding head, applied pressure is 200g/cm 2, the rotating speed of grinding head is 75r/min, the flow velocity 240ml/min of polishing fluid, and polish temperature is 24 DEG C, and polishing time is 80 seconds.Carry out defects detection by SEM SEM to full sheet, index detects the defect of >0.2um size.After measured, after polished and cleaned, defect decreases 86%.
Table 1 is polishing time in the application's specific embodiment and Defect Removal Efficiency statistics.As shown in table 1, the cmp method provided by utilizing the application, the defect major part on silicon chip is removed, and Defect Removal Efficiency is 85%-90%.In CMP process, the time used on three different polishing pads is identical.In actual industrial production, after n-th batch of wafer is ground on the first grinding pad, be placed on while the second grinding pad carries out grinding, the grinding pad of (n+1)th batch can be placed on the first grinding pad and grind; And while n-th batch of wafer be placed in the 3rd grinding pad grinds, the second grinding pad grinds the wafer of (n+1)th batch, and the first grinding pad starts the wafer grinding the n-th+2 batches.This improves the efficiency of chemically mechanical polishing.
Table 1
As can be seen from the above embodiments, the above-mentioned example of the application achieves following technique effect: utilize three different polishing fluids to carry out polishing to wafer, and on same polishing pad, adopt different polishing fluids, thus the time of wafer cleaning polishing was reasonably allocated in the different glossing stage, solve the residue defect difficulty removal that wafer exists in planarization process and the inefficient technical problem of polishing wafer caused thereof; After the method adopting the application to provide carries out polishing, the defect of crystal column surface decreases 86%.
These are only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection domain that all should be included in the application.

Claims (11)

1. a cmp method, is characterized in that, described method comprises:
Step S1, is placed in polished wafer on the first polishing pad, implements glossing and the first reduction process, obtains the first wafer;
Step S2, is placed in described first wafer on the second polishing pad, implements the second reduction process and the first cleaning, obtains the second wafer;
Step S3, is placed in described second wafer on the 3rd polishing pad, implements the second cleaning.
2. cmp method according to claim 1, is characterized in that, described step S1 comprises:
Treat that described wafer polishing is placed on described first polishing pad, the first polishing fluid is added drop-wise to described polished wafer, carries out machine glazed finish;
Drip the second polishing fluid and implement the first reduction process, obtain described first wafer;
The enforcement time of described step S1 is 60-90 second.
3. cmp method according to claim 2, is characterized in that, in described step S1, the enforcement time of described machine glazed finish is 20-30 second, and the enforcement time of described first reduction process is 40-60 second.
4. the cmp method according to Claims 2 or 3, is characterized in that, the grinding agent of described first polishing fluid is Si0 2particle, described SiO 2the average grain diameter of particle is 50-100 nanometer, described SiO 2the concentration of particle is 10%-50%; The grinding agent of described second polishing fluid is gluey Si0 2particle, described SiO 2the average grain diameter of particle is the SiO of 20-80 nanometer, described glue 2granule density is 5%-30%.
5. cmp method according to claim 1, is characterized in that, described step S2 comprises:
Described first wafer is placed on described second polishing pad, the 3rd polishing fluid is added drop-wise on described first wafer and implements the second reduction process;
Drip the 4th polishing fluid and implement the first cleaning, obtain the second wafer;
The enforcement time of described step S2 is 60-90 second.
6. cmp method according to claim 5, is characterized in that, in described step S2, the time of described second reduction process is 20-30 second, and the time of described first cleaning is 40-60 second.
7. the cmp method according to claim 5 or 6, is characterized in that, the grinding agent of described 3rd polishing fluid is gluey Si0 2particle, described SiO 2the average grain diameter of particle is the SiO of 20-80 nanometer, described glue 2the concentration of particle is 5%-30%; The grinding agent of described 4th polishing fluid is Si0 2particle, described SiO 2mean particle size is 50-100 nanometer, described SiO 2granule density is 5%-30%.
8. cmp method according to claim 7, is characterized in that, containing oxidant in described 4th polishing fluid, described oxidant is preferably H 2o 2.
9. cmp method according to claim 1, it is characterized in that, described step S3 comprises: be placed in by described second wafer on described 3rd polishing pad, and drip the 5th polishing fluid and implement the second cleaning, the enforcement time of described step S3 is 60-90 second.
10. cmp method according to claim 9, is characterized in that, the grinding agent of described 5th polishing fluid is Si0 2particle, described SiO 2mean particle size is 50-100 nanometer, described SiO 2granule density is 5%-30%.
11. cmp methods according to claim 10, is characterized in that, containing oxidant in described 5th polishing fluid, described oxidant is preferably H 2o 2.
CN201410035898.6A 2014-01-24 2014-01-24 Chemical mechanical polishing method Pending CN104802071A (en)

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CN113327852A (en) * 2021-05-27 2021-08-31 上海芯物科技有限公司 Chemical mechanical polishing method for wafer surface
CN113327852B (en) * 2021-05-27 2022-07-29 上海芯物科技有限公司 Chemical mechanical polishing method for wafer surface

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