CN101347922A - Method for cleaning grinding pad - Google Patents
Method for cleaning grinding pad Download PDFInfo
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- CN101347922A CN101347922A CNA2007100438641A CN200710043864A CN101347922A CN 101347922 A CN101347922 A CN 101347922A CN A2007100438641 A CNA2007100438641 A CN A2007100438641A CN 200710043864 A CN200710043864 A CN 200710043864A CN 101347922 A CN101347922 A CN 101347922A
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- grinding pad
- cleaning
- cleaning method
- deionized water
- grinding
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Abstract
The invention discloses a method for cleaning a grinding pat, which relates to a grinding technology in the field of semiconductor manufacturing. The cleaning method uses deionized water of which the temperature is higher than normal temperature for cleaning the grinding surface of the grinding pat so as to remove residual impurities on the grinding surface; wherein, the grinding surface is smooth. Compared with the cleaning method for the existing technique, the cleaning method of the invention can be used for effectively removing residues such as agglomerations, and the like, in a more effective way. Thus, the grinding surface of a wafer is avoided from being scuffed in subsequent working procedures.
Description
Technical field
The present invention relates to the grinding technics of field of semiconductor manufacture, specifically, relate to a kind of cleaning method of grinding pad.
Background technology
(Chemical Mechanical Polishing CMP) is the important process that semiconductor devices is made to cmp.Cmp is exactly that wafer is placed on the grinding pad (pad) of rotation, adds certain pressure again, grinds with chemical grinding liquid (slurry).Lapping liquid is by abrasive grains (abrasive particles), and can be to being formed by the chemical solution of grinding film chemically reactive.Most CMP step all is to use the grinding pad that has groove to carry out in the whole manufacturing process of semiconductor devices, and the groove on the grinding pad is to be used for making lapping liquid to reach even distribution on grinding pad.
But some surface of semiconductor devices not only requires flatness but also requires smoothness as aluminium mirror surface (aluminum mirror), need have higher reflectivity.The grinding pad that employing has groove can be formed ripple mark (Murat) by the grinding layer surface at wafer in process of lapping.In order to improve, usually adopt no groove grinding pad to carry out the CMP step by the smoothness of lapped face.Carry out finding that no groove grinding pad surface forms a large amount of residue cakings after the CMP step, the diameter of most of caking has the 2-5 micron, and the average diameter of the abrasive grains of lapping liquid is 50 nanometers.For avoiding influence to subsequent handling, need cleaning grinding pad that caking is removed, but find to adopt existing method to be difficult to above-mentioned caking is removed, no matter be to increase the cleaning force of deionized water or increase the time of cleaning, all can't improve above-mentioned situation well.
In view of this, need provide a kind of cleaning method of new grinding pad to improve above-mentioned situation.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of cleaning method that can effectively remove the grinding pad residue.
For solving the problems of the technologies described above, the invention provides a kind of cleaning method of grinding pad, this cleaning method uses the deionized water that is higher than normal temperature that the lapped face of grinding pad is cleaned, and removes the residual impurity of lapped face.
The lapped face of described grinding pad is level and smooth.
Serviceability temperature is that 23-40 degree centigrade deionized water cleans.
Serviceability temperature is that 40 degrees centigrade deionized water carries out cleaning step.
Compared with prior art, cleaning method of the present invention adopts the deionized water of heat that lapped face is cleaned, and has removed caking or the like residue effectively, has avoided in subsequent handling wafer caused defective such as scratch by lapped face.
Description of drawings
Fig. 1 is the schematic diagram of the cleaning machine of enforcement cleaning method of the present invention.
The specific embodiment
Below the preferred embodiment of the cleaning method of grinding pad of the present invention is described in further detail.
See also Fig. 1, the cleaning method of the grinding pad of present embodiment comprises: grinding pad 2 is provided, and this grinding pad is no groove grinding pad 2, has smooth lapped face; The deionized water that employing is higher than normal temperature cleans lapped face, will caking and other residues that wafer carries out remaining in after the mechanical lapping step lapped face be removed.Described normal temperature generally is meant 20-25 degree centigrade.Further, the employed deionized water of cleaning step can also be the arbitrary temp between 23-40 degree centigrade.In addition, when the temperature of the deionized water that uses is 40 degrees centigrade, can reach best removal effect, examine under a microscope, the lapped face of grinding pad is residue such as caking grade not basically.
Above-mentioned cleaning method is implemented on cleaning machine, and cleaning machine has turntable 1, places above-mentioned grinding pad 2 on the turntable 1.This cleaning machine also comprises the valve 4 of preheating device 5 and control de-ionized water flow rate.Described deionized water is heated to preset temperature in preheating device 5, by conveyance conduit 3, arrival nozzle 30 places are washed the lapped face of grinding pad 2.Above-mentioned preinstall apparatus 5 can be a reception room of depositing deionized water, also can only be a heater, and when deionized water flow through this heater, deionization just was heated to predetermined temperature.
For the smooth grinding pad of lapped face, adopt existing cleaning method to be difficult to removing residues, but adopt cleaning method of the present invention can effectively remove residues such as caking by the method that hot deionized water cleans, that has avoided in subsequent handling wafer is caused defectives such as scratch by lapped face.Feasible employing has surface that the grinding pad of smooth surface has relatively high expectations to the wafer reflectivity and grinds and become possibility.Cleaning method of the present invention is not limited to clean the smooth grinding pad of lapped face, if the grinding pad Surface Groove is less, when adopting existing method to be difficult to obtain better cleaning performance, also can adopt cleaning method of the present invention to clean.
Claims (5)
1. the cleaning method of a grinding pad is characterized in that: use the deionized water that is higher than normal temperature that the lapped face of grinding pad is cleaned, remove the residual impurity of lapped face.
2. cleaning method as claimed in claim 1 is characterized in that: the lapped face of described grinding pad is level and smooth.
3. cleaning method as claimed in claim 1 is characterized in that: serviceability temperature is that 23-40 degree centigrade deionized water cleans.
4. cleaning method as claimed in claim 3 is characterized in that: serviceability temperature is that 40 degrees centigrade deionized water carries out cleaning step.
5. cleaning method as claimed in claim 1 is characterized in that: described cleaning method is implemented on cleaning machine, and this cleaning machine includes preheating device, and it is heated to above described deionized water a certain temperature of normal temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100438641A CN101347922A (en) | 2007-07-17 | 2007-07-17 | Method for cleaning grinding pad |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100438641A CN101347922A (en) | 2007-07-17 | 2007-07-17 | Method for cleaning grinding pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101347922A true CN101347922A (en) | 2009-01-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100438641A Pending CN101347922A (en) | 2007-07-17 | 2007-07-17 | Method for cleaning grinding pad |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101347922A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101893841A (en) * | 2010-06-14 | 2010-11-24 | 珠海天威飞马打印耗材有限公司 | Regeneration method of powder discharge blade of processing cartridge of laser printer |
| CN102528651A (en) * | 2010-12-21 | 2012-07-04 | 中国科学院微电子研究所 | Chemical mechanical polishing equipment and preheating method thereof |
| CN102554783A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of grinding pad |
| CN102672613A (en) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | Method and device for cleaning grinding pad |
| CN102688862A (en) * | 2012-06-11 | 2012-09-26 | 上海宏力半导体制造有限公司 | High-pressure deionized water ejecting device for cleaning grinding gasket and chemical mechanical grinding equipment |
| CN113400188A (en) * | 2020-03-16 | 2021-09-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
-
2007
- 2007-07-17 CN CNA2007100438641A patent/CN101347922A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101893841A (en) * | 2010-06-14 | 2010-11-24 | 珠海天威飞马打印耗材有限公司 | Regeneration method of powder discharge blade of processing cartridge of laser printer |
| CN102528651A (en) * | 2010-12-21 | 2012-07-04 | 中国科学院微电子研究所 | Chemical mechanical polishing equipment and preheating method thereof |
| CN102528651B (en) * | 2010-12-21 | 2014-10-22 | 中国科学院微电子研究所 | Chemical mechanical polishing equipment and preheating method thereof |
| CN102554783A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of grinding pad |
| CN102554783B (en) * | 2010-12-23 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of grinding pad |
| CN102672613A (en) * | 2011-03-18 | 2012-09-19 | 中国科学院微电子研究所 | Method and device for cleaning grinding pad |
| CN102672613B (en) * | 2011-03-18 | 2016-01-27 | 中国科学院微电子研究所 | Method and device for cleaning grinding pad |
| CN102688862A (en) * | 2012-06-11 | 2012-09-26 | 上海宏力半导体制造有限公司 | High-pressure deionized water ejecting device for cleaning grinding gasket and chemical mechanical grinding equipment |
| CN113400188A (en) * | 2020-03-16 | 2021-09-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
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Open date: 20090121 |