CN110416126A - Board and wafer thining method is thinned in wafer - Google Patents
Board and wafer thining method is thinned in wafer Download PDFInfo
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- CN110416126A CN110416126A CN201910665727.4A CN201910665727A CN110416126A CN 110416126 A CN110416126 A CN 110416126A CN 201910665727 A CN201910665727 A CN 201910665727A CN 110416126 A CN110416126 A CN 110416126A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 208000037656 Respiratory Sounds Diseases 0.000 claims abstract description 91
- 238000005259 measurement Methods 0.000 claims abstract description 87
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 239000000126 substance Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 106
- 239000000377 silicon dioxide Substances 0.000 claims description 53
- 235000012239 silicon dioxide Nutrition 0.000 claims description 50
- 238000005530 etching Methods 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 4
- 241000790917 Dioxys <bee> Species 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 193
- 239000007788 liquid Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000007921 spray Substances 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 206010011376 Crepitations Diseases 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 244000137852 Petrea volubilis Species 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention is related to a kind of wafer and board and wafer thining method is thinned, wherein it includes: measurement unit that board, which is thinned, in the wafer, for measuring the thinned degree of wafer and measuring crackle and the deformation of crystal column surface；Grinding unit is connected to the measurement unit, for the measurement grinding crystal wafer according to the measurement unit；CMP unit is connected to the measurement unit, for carrying out chemical mechanical grinding to wafer according to the measurement of the measurement unit；Crackle and deformation removal unit, be connected to the measurement unit, for according to the measurement of the measurement unit remove chemical mechanical grinding after crystal column surface crackle and deformation.
Description
Technical field
The present invention relates to wafers to fabricate field, and in particular to board and wafer thining method is thinned in a kind of wafer.
Background technique
Wafer thinning technique is used in semiconductor technology rear end mostly, mainly by crystalline substance back with lapping mode (backside
Grinding extra substrate material) is removed, with processing procedures such as the subsequent encapsulation of benefit, wafer required by semiconductor technology rear end is thinned
Specification relative loose, especially on thickness, surface roughness, flatness and TTV.However, with semiconductor technology progress and
The diversification of product, wafer thinning technique have been widely used in the technique front end of optical semiconductor device etc., wafer herein
Thinned specification is very stringent, and wafer thickness must be thinned within several um, surface roughness, flatness, TTV also must reach
To nm grade, therefore it is referred to as with high-order wafer thinning technique.
High-order wafer thinning technique uses " back-grinding (backside grinding)+wet etching (wet etch) at present
The method of+edge reduction (edge trimming)+chemical mechanical grinding (CMP)+wet etching (wet etch) ", but there is system
Journey is complicated, total thickness variations control (TTV, total thickness variation) is not easy, lateral etch and cost are excessively high
Problem.
Summary of the invention
The purpose of the present invention is to provide a kind of wafers, and board and wafer thining method is thinned, and processing procedure is simple, without lateral erosion
It carves, and cost is relatively low.
In order to solve the above technical problems, the following provide a kind of wafers, and board is thinned, comprising: measurement unit, for measuring
It surveys the thinned degree of wafer and measures crackle and the deformation of crystal column surface；Grinding unit is connected to the measurement unit, is used for
According to the measurement grinding crystal wafer of the measurement unit；CMP unit is connected to the measurement unit, for according to the amount
The measurement for surveying unit carries out chemical mechanical grinding to wafer；Crackle and deformation removal unit, are connected to the measurement unit,
For according to the measurement of the measurement unit remove chemical mechanical grinding after crystal column surface crackle and deformation.
It optionally, further include transmission unit, in the measurement unit, grinding unit, CMP unit and crackle and deformation
Transmission is to wafer between removal unit.
Optionally, further include control unit, be connected to the grinding unit, measurement unit, CMP unit and crackle and deformation
Removal unit measures wafer for controlling the measurement unit, and for the measurement knot according to the measurement unit
Fruit controls the processing of the grinding unit, CMP unit, crackle and deformation removal unit to wafer.
Optionally, the grinding unit includes: to roughly grind grinding head, middle barreling bistrique, fine grinding grinding head and polishing grinding head,
Correspond respectively to the different degrees of grinding to wafer.
Optionally, the crackle and deformation removal unit include: Strong oxdiative module, for aoxidizing crystal column surface with crackle
With the region of deformation, the region for making crystal column surface have crackle or deformation is oxidized to silicon dioxide layer；Etch module, for etching
The silicon dioxide layer that wafer surface oxidation generates, to remove crackle and the deformation of crystal column surface.
Optionally, silicon dioxide layer of the etch module to crystal column surface and the etching ratio to wafer are greater than 10:1.
Optionally, further includes: cleaning unit is used for cleaning wafer.
In order to solve the above technical problems, a kind of wafer thining method also provided below, which is characterized in that including following
Step: wafer to be thinned is ground；The thickness of wafer after measurement grinding, and chemical machinery is carried out to wafer according to measurement
Grinding；Crackle and the deformation of crystal column surface are measured, and removes crackle and the deformation of crystal column surface.
Optionally, it grinds when thinned wafer, comprising the following steps: the wafer is roughly ground；To the wafer
It is ground in progress；Fine grinding is carried out to the wafer；The wafer is polished.
Optionally, when removing crackle and the deformation of crystal column surface, comprising the following steps: wafer is placed into Strong oxdiative solution
In, it include the silicon dioxide layer of crackle and deformation in crystal column surface formation；Remove the silicon dioxide layer.
Optionally, when removing the silicon dioxide layer, comprising the following steps: etch the silica using etching solution
Layer, the silicon dioxide layer is removed, and silicon dioxide layer of the etching solution to crystal column surface and the etching ratio to wafer are greater than
10:1。
Optionally, after removing the silicon dioxide layer, comprising the following steps: measure the thinned degree of wafer and measure brilliant
The crackle of circular surfaces and deformation, make wafer meet preset need.
Board, which is thinned, in the wafer can effectively simplify the thinned processing procedure of high-order wafer, the control of control total thickness variations, nothing
Lateral etch and the advantages that reduce cost.
Detailed description of the invention
Fig. 1 is the connection relationship diagram of the thinned board of wafer in a kind of specific embodiment of the invention.
Fig. 2 is the structural schematic diagram of the grinding unit of the thinned board of wafer in a kind of specific embodiment of the invention.
Fig. 3 is the structural schematic diagram of the thinned board of wafer in a kind of specific embodiment of the invention.
Fig. 4 is the side schematic view of the wafer for having crackle and deformation in a kind of specific embodiment of the invention.
Fig. 5 is to generate silica in the crystal column surface for having crackle and deformation in a kind of specific embodiment of the invention
The schematic diagram of layer.
Fig. 6 is the schematic diagram after the silicon dioxide layer of the removal crystal column surface in a kind of specific embodiment of the invention.
Fig. 7 is the step schematic diagram of the crystal round fringes thining method in a kind of specific embodiment of the invention.
Specific embodiment
Board is thinned to a kind of wafer proposed by the present invention below in conjunction with the drawings and specific embodiments and side is thinned in wafer
Method is described in further detail.
Fig. 1 to 4 is please referred to, wherein Fig. 1 is the connection of the thinned board of wafer in a kind of specific embodiment of the invention
Relation schematic diagram, Fig. 2 are the structural representation of the grinding unit of the thinned board of wafer in a kind of specific embodiment of the invention
Figure, Fig. 3 are the structural schematic diagram of the thinned board of wafer in a kind of specific embodiment of the invention, and Fig. 4 is of the invention one
The side schematic view of the wafer for having crackle and deformation in kind specific embodiment.
In this specific embodiment, a kind of thinned board of wafer is provided, comprising: measurement unit 101, for measuring crystalline substance
The thinned degree of circle 206 and crackle and the deformation for measuring 206 surface of wafer；Grinding unit 102 is connected to the measurement unit
101, for the measurement grinding crystal wafer 206 according to the measurement unit 101；It is single to be connected to the measurement for CMP unit 103
Member 101, for carrying out chemical mechanical grinding to wafer 206 according to the measurement of the measurement unit 101；Crackle and deformation are gone
Except unit 104, it is connected to the measurement unit 101, for removing chemical machinery according to the measurement of the measurement unit 101
The crackle on 206 surface of wafer after grinding and deformation.
The wafer is thinned board and is integrated together grinding function, CMP function, is carrying out reduction processing to wafer 206
Shi Wuxu converts wafer 206 between multiple boards, reduces the contaminated possibility of wafer 206.Also, there is measurement unit 101,
Grinding result and CMP result can be monitored, be brought under control thinning process.Further, there is crackle and deformation
Removal unit 104 can remove crackle and deformation that wafer 206 generates in thinning process, and further thinned wafer
206, it is simple and convenient.
In a specific embodiment, the measurement unit 101 includes wafer thickness measuring instrument and short-wave infrared phase
Machine etc..Wherein, the short-wave infrared camera can be used to detect the defect on 206 surface of wafer, including crack defect and deformation lack
It falls into.This is because silicon has the characteristic that can penetrate infrared ray.Therefore, using short-wave infrared camera, such as InGaAsP
(InGaAs) camera etc. can allow user to have an X-rayed the silicon substrate of wafer 206, get the concrete condition of crackle, such as depth.
In a specific embodiment, it further includes transmission unit 302 that board, which is thinned, in the wafer, in the measurement
Transmission is to wafer 206 between unit 101, grinding unit 102, CMP unit 103 and crackle and deformation removal unit 104.
In a specific embodiment, it further includes control unit 105 that board, which is thinned, in the wafer, is connected to the grinding
Unit 102, measurement unit 101, CMP unit 103 and crackle and deformation removal unit 104, for controlling the measurement unit 101
Wafer 206 is measured, and for according to the measurement of the measurement unit 101 control the grinding unit 102,
The processing of CMP unit 103, crackle and deformation removal unit 104 to wafer 206.
In a specific embodiment, the grinding unit 102 include: corase grinding grinding head 201, middle barreling bistrique 202,
Fine grinding grinding head 203 and polishing grinding head 204 correspond respectively to the different degrees of grinding to wafer 206.In fact, can also
The type for the grinding head for including in the grinding unit 102 is set as needed.In a specific embodiment, different to grind
Bistrique is arranged in different chambers, and wafer 206 is transmitted between each chamber by the transmission unit 302.
In a specific embodiment, corase grinding grinding head 201 use bulky grain sand paper, quickly and greatly remove it is unnecessary
Part, but will cause rough surface, a large amount of deformation layers and a large amount of micro-cracks.Particle sand paper in middle 202 use of barreling bistrique, subtracts
Rough surface, deformation layer and micro-crack caused by slow corase grinding, with the subsequent fine grinding processing procedure of benefit.Fine grinding grinding head 203 uses small
Granule paper slows down rough surface caused by middle mill, deformation layer and micro-crack, with the subsequent polishing processing procedure of benefit.Polishing grinding head 204
Using bulky grain slurry, slow down rough surface caused by fine grinding, deformation layer and micro-crack, with sharp subsequent CMP processing procedure.
The grinding unit 102 includes corase grinding grinding head 201, middle barreling bistrique 202, fine grinding grinding head 203 and throws simultaneously
Light grinding head 204, therefore corase grinding, middle mill, fine grinding and polishing can carry out simultaneously, can so increase wafer 206 and work is thinned
The quantum of output of sequence.
The grinding unit 102 further includes wafer jig 205, for clamping the crystalline substance during grinding crystal wafer 206
Circle 206.
In a specific embodiment, described control unit 105 is connected to the transmission unit 302, by the control
Unit 105 controls the transmission unit 302 and picks and places the wafer 206.In a specific embodiment, described control unit
The control of 105 pairs of transmission units 302 include: the control transmission unit 302 be placed with respectively at four corase grinding grinding head 201,
Wafer 206 is transmitted between middle barreling bistrique 202, fine grinding grinding head 203 and the chamber of polishing grinding head 204, so that the wafer 206
It can be successively by the grinding of corase grinding grinding head 201, middle barreling bistrique 202, fine grinding grinding head 203 and polishing grinding head 204.
In a specific embodiment, the crackle and deformation removal unit 104 include: Strong oxdiative module, are used for oxygen
Change the region that 206 surface of wafer has crackle and deformation, 206 surface of wafer is made to have the region of crackle or deformation to be oxidized to dioxy
SiClx layer 501；Etch module, for etching the silicon dioxide layer 501 of 206 surface oxidation of wafer generation, to remove 206 table of wafer
The crackle in face and deformation.
In a specific embodiment, the Strong oxdiative module provides Strong oxdiative solution.In a kind of specific embodiment
In, the Strong oxdiative solution includes the Strong oxdiatives solution such as hydrogen peroxide, ozone.It is described in a kind of more preferably specific embodiment
Strong oxdiative solution is the Strong oxdiative solution of high temperature, to accelerate oxidation rate.A kind of specifically in embodiment, the strong oxygen
Change solution is hydrogen peroxide, and temperature is about at 50 DEG C.
Please refer to Fig. 5, to have 206 table of crackle and the wafer of deformation in a kind of specific embodiment of the invention
The schematic diagram of face generation silicon dioxide layer 501.
In this specific embodiment, 206 surface of wafer is had to the zone oxidation of crackle and deformation using Strong oxdiative solution
At silicon dioxide layer 501, in this way, crystalline substance can also be removed simultaneously when the later period is using etch module removal silicon dioxide layer 501
Circle 206 surfaces crackle and deformation, ensure that the quality of wafer 206, also achieve it is thinned, it is simple and convenient.
In a specific embodiment, the Strong oxdiative module includes liquid tank, and the liquid tank is for placing strong oxygen
Change solution, in this way, when using Strong oxdiative module oxidation 206 surface of wafer, as long as wafer 206 is placed into the liquid
In slot, make 206 surface of wafer there is the region of crackle and deformation to come into full contact with, react with Strong oxdiative solution.
In a kind of other specific embodiments, the Strong oxdiative module includes spray head, and the spray head is connected to strong oxygen
Change source of solvent.When using Strong oxdiative module oxidation 206 surface of wafer, the spray head only need to be controlled to the wafer 206
Surface spraying Strong oxdiative solution, make 206 surface of wafer there is the region of crackle and deformation to come into full contact with, react with Strong oxdiative solution
.
Using spray head compared to liquid tank is used, required Strong oxdiative solution is less, and using liquid tank compared to using
Spray head then operates simpler.Therefore, in the actual use process, the tool of the Strong oxdiative module can be set as needed
Body structure.
In a specific embodiment, using 206 surface of Strong oxdiative solution oxide wafer, on 206 surface of wafer
When the silicon dioxide layer 501 of formation, the thickness of silicon dioxide layer 501 should be greater than or equal to the depth of crackle and the ruler of deformation
It is very little, convenient for all removing the region of all crackles and deformation, guarantee to the crackle on 206 surface of wafer and the removal effect of deformation.
In a specific embodiment, 206 surface of wafer is being aoxidized using the Strong oxdiative module, is making 206 table of wafer
There is the region of crackle and deformation to be all oxidized to before silicon dioxide layer 501 in face, and it is first right using the measurement unit 101 all to need
Crackle and the size of deformation measure.
It is the silica on removal 206 surface of wafer in a kind of specific embodiment of the invention please refer to Fig. 6
Schematic diagram after layer 501.
In this specific embodiment, the silicon dioxide layer 501 on 206 surface of wafer is removed by etch module.It is described
Silicon dioxide layer 501 of the etch module to 206 surface of wafer and the etching ratio to wafer 206 are greater than 10:1, specifically, the quarter
Silicon dioxide layer 501 of the etching solution to 206 surface of wafer and the etching ratio to wafer 206 for losing module offer are greater than 10:1.
This way it is ensured that etching solution is very small to the etch quantity in 501 region of non-silicon dioxide layer on 206 surface of wafer, not will cause
The loss in the region of the non-silicon dioxide layer 501 on 206 surface of wafer.
In a specific embodiment, the etching solution includes HF, and concentration is about 5%.
In a specific embodiment, board is thinned in the wafer further include: cleaning unit 301 is used for cleaning wafer
206.In a specific embodiment, the cleaning unit 301 is arranged in an individual chamber, is cleaning wafer 206
Deionized water is provided, in this way, wafer 206 can be placed into 301 institute of cleaning unit after performing etching to wafer 206
Chamber in, using deionized water rinse wafer 206, the reaction wastes such as the etching solution on 206 surface of wafer are washed away.
Please refer to Fig. 1 to Fig. 7, for a kind of wafer thining method of specific embodiment of the invention.
In this specific embodiment, a kind of wafer thining method is additionally provided, comprising the following steps: S71 is ground wait subtract
Thin wafer 206；The thickness of wafer 206 after S72 measurement grinding, and chemical machinery is carried out to wafer 206 according to measurement
Grinding；S73 measures crackle and the deformation on 206 surface of wafer, and removes crackle and the deformation on 206 surface of wafer.
In a specific embodiment, it grinds when thinned wafer 206, comprising the following steps: to the wafer 206
It is roughly ground；To the wafer 206 carry out in grind；Fine grinding is carried out to the wafer 206；The wafer 206 is polished.
In a specific embodiment, board is thinned using the wafer to realize that the grinding to wafer 206 is thinned.In
In the specific embodiment, the wafer be thinned board include: measurement unit 101, for measure the thinned degree of wafer 206 with
And measure crackle and the deformation on 206 surface of wafer；Grinding unit 102 is connected to the measurement unit 101, for according to
The measurement grinding crystal wafer 206 of measurement unit 101；CMP unit 103 is connected to the measurement unit 101, for according to institute
The measurement for stating measurement unit 101 carries out chemical mechanical grinding to wafer 206；Crackle and deformation removal unit 104, are connected to
The measurement unit 101, for according to the wafer 206 after the measurement of the measurement unit 101 removal chemical mechanical grinding
The crackle on surface and deformation.
In a specific embodiment, the measurement unit 101 includes wafer thickness measuring instrument and short-wave infrared phase
Machine etc..Wherein, the short-wave infrared camera can be used to detect the defect on 206 surface of wafer, including crack defect and deformation lack
It falls into.This is because silicon has the characteristic that can penetrate infrared ray.Therefore, using short-wave infrared camera, such as InGaAsP
(InGaAs) camera etc. can allow user to have an X-rayed the silicon substrate of wafer 206, get the concrete condition of crackle, such as depth.
In a specific embodiment, it further includes transmission unit 302 that board, which is thinned, in the wafer, in the measurement
Transmission is to wafer 206 between unit 101, grinding unit 102, CMP unit 103 and crackle and deformation removal unit 104.
In this specific embodiment, the grinding unit 102 include: corase grinding grinding head 201, it is middle barreling bistrique 202, thin
Barreling bistrique 203 and polishing grinding head 204 correspond respectively to the different degrees of grinding to wafer 206.Therefore, using described
Corase grinding grinding head 201 roughly grinds the wafer 206；Using the middle barreling bistrique 202 in the wafer 206 progress
Mill；Fine grinding is carried out to the wafer 206 using the fine grinding grinding head 203；Use 204 pairs of wafers of the polishing grinding head
206 are polished.
In a specific embodiment, the grinding that the grinding unit 102 carries out is back mill, is the back to wafer 206
It is ground in face.
In fact, the type for the grinding head for including in the grinding unit 102 can also be set as needed, it is more to realize
The combination of the different grinding of kind.In a specific embodiment, different grinding heads is arranged in different chambers, by described
Transmission unit 302 transmits wafer 206 between each chamber.
In a specific embodiment, it after completing each grinding, is all measured by the measurement unit 101 described
The thickness of wafer 206, to further be controlled.
For example, after measurement wafer 206 is more than estimated corase grinding thickness, it is right to control the middle barreling bistrique 202 after corase grinding
The degree of grinding of wafer 206, so that the thickness of the wafer 206 after middle mill is identical as the thickness after originally estimated middle mill.In this way,
It can guarantee that the thickness after wafer 206 is ground is accurate, meet preset requirement.
In a specific embodiment, each, which is provided in the chamber of grinding head, is both provided with a set of measurement unit
101, in this way, with regard to being measured it is not necessary that wafer 206 is moved to specific measure in chamber, and can be in the chamber of grinding generation
The interior thickness measure for directly carrying out wafer 206.In fact, can also be as needed, it is only thinned in board in the wafer and is arranged one
Measurement unit 101 is covered, the cost that board is thinned in the wafer described in this way greatly reduces.
In a specific embodiment, it further includes control unit 105 that board, which is thinned, in the wafer, is connected to the grinding
Unit 102, measurement unit 101, CMP unit 103 and crackle and deformation removal unit 104, for controlling the measurement unit 101
Wafer 206 is measured, and for according to the measurement of the measurement unit 101 control the grinding unit 102,
The processing of CMP unit 103, crackle and deformation removal unit 104 to wafer 206.
In this specific embodiment, the measurement unit 101 is connected to described control unit 105, single by the control
Member 105 controls the thinned parameter in next step process to wafer 206 according to the measurement of the measurement unit 101.
In a specific embodiment, when removing crackle and the deformation on 206 surface of wafer, comprising the following steps: will be brilliant
Circle 206 is placed into Strong oxdiative solution, and on 206 surface of wafer, formation includes the silicon dioxide layer 501 of crackle and deformation；Removal
The silicon dioxide layer 501.
It in this specific embodiment, is that crackle and deformation layer are realized by the crackle and deformation removal unit 104
Removal.Specifically, the crackle and deformation removal unit 104 include: Strong oxdiative module, for aoxidizing 206 surface of wafer
Region with crackle and deformation makes 206 surface of wafer have the region of crackle or deformation to be oxidized to silicon dioxide layer 501；It carves
Module is lost, for etching the silicon dioxide layer 501 of 206 surface oxidation of wafer generation, to remove crackle and the change on 206 surface of wafer
Shape.
In a specific embodiment, the Strong oxdiative module provides Strong oxdiative solution.In a kind of specific embodiment
In, the Strong oxdiative solution includes the Strong oxdiatives solution such as hydrogen peroxide, ozone.It is described in a kind of more preferably specific embodiment
Strong oxdiative solution is the Strong oxdiative solution of high temperature, to accelerate oxidation rate.A kind of specifically in embodiment, the strong oxygen
Change solution is hydrogen peroxide, and temperature is about at 50 DEG C.
206 surface of wafer there are into crackle and the zone oxidation of deformation into silicon dioxide layer 501 using Strong oxdiative solution, this
Sample has crackle and change by removing silicon dioxide layer 501 using the etch module in the later period so as to 206 surface of wafer
The region of shape all removes, and has both realized thinned, in turn ensures the quality of wafer 206, simple and convenient.
In a specific embodiment, the Strong oxdiative module includes liquid tank, and the liquid tank is for placing strong oxygen
Change solution, in this way, when using Strong oxdiative module oxidation 206 surface of wafer, as long as wafer 206 is placed into the liquid
In slot, make 206 surface of wafer there is the region of crackle and deformation to come into full contact with, react with Strong oxdiative solution.
In a kind of other specific embodiments, the Strong oxdiative module includes spray head, and the spray head is connected to strong oxygen
Change source of solvent.When using Strong oxdiative module oxidation 206 surface of wafer, the spray head only need to be controlled to the wafer 206
Surface spraying Strong oxdiative solution, make 206 surface of wafer there is the region of crackle and deformation to come into full contact with, react with Strong oxdiative solution
.
Using spray head compared to liquid tank is used, required Strong oxdiative solution is less, and using liquid tank compared to using
Spray head then operates simpler.Therefore, in the actual use process, the tool of the Strong oxdiative module can be set as needed
Body structure.
In a specific embodiment, using 206 surface of Strong oxdiative solution oxide wafer, on 206 surface of wafer
When the silicon dioxide layer 501 of formation, the thickness of silicon dioxide layer 501 should be greater than or equal to the depth of crackle and the ruler of deformation
It is very little, convenient for all removing the region of all crackles and deformation, guarantee to the crackle on 206 surface of wafer and the removal effect of deformation.
In a specific embodiment, 206 surface of wafer is being aoxidized using the Strong oxdiative module, is making 206 table of wafer
There is the region of crackle and deformation to be all oxidized to before silicon dioxide layer 501 in face, and it is first right using the measurement unit 101 all to need
Crackle and the size of deformation measure.
In a specific embodiment, when removing the silicon dioxide layer 501, comprising the following steps: molten using etching
Liquid etches the silicon dioxide layer 501, the silicon dioxide layer 501 is removed, and etching solution is to the dioxy on 206 surface of wafer
SiClx layer 501 and 10:1 is greater than to the etching ratio of wafer 206.
It in this specific embodiment, is that the silicon dioxide layer 501 is removed by etch module.In a kind of specific reality
It applies in mode, silicon dioxide layer 501 of the etch module to 206 surface of wafer and the etching ratio to wafer 206 are greater than 10:1,
Specifically, silicon dioxide layer 501 of the etching solution to 206 surface of wafer of the etch module offer and the quarter to wafer 206
Erosion is than being greater than 10:1.This way it is ensured that etching solution is non-to the etch quantity in 501 region of non-silicon dioxide layer on 206 surface of wafer
It is often small, it not will cause the loss in the region of the non-silicon dioxide layer 501 on 206 surface of wafer.
In a specific embodiment, the etching solution includes HF, and concentration is about 5%.
In a specific embodiment, after removing the silicon dioxide layer 501, comprising the following steps: measure wafer 206
Thinned degree and measure 206 surface of wafer crackle and deformation, so that wafer 206 is met preset need.
Specifically, measuring wafer 206 again using the measurement unit 101, whether there are also crackle or deformations, if so, then again
The secondary relevant parameter for obtaining crackle and deformation, such as size, depth, and give the wafer 206 to the crackle and change again
Shape removal unit 104 handles the wafer 206 by the crackle and deformation removal unit 104 again, removes 206 surface of wafer
Crackle and deformation.
In a specific embodiment, further comprising the steps of: cleaning wafer after removing the silicon dioxide layer 501
206, make 206 surface free from admixture of wafer.In this way, the production process after capable of rapidly putting into the wafer 206 after being thinned
In.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (12)
1. board is thinned in a kind of wafer characterized by comprising
Measurement unit, for measuring the thinned degree of wafer and measuring crackle and the deformation of crystal column surface；
Grinding unit is connected to the measurement unit, for the measurement grinding crystal wafer according to the measurement unit；
CMP unit is connected to the measurement unit, for carrying out chemical machine to wafer according to the measurement of the measurement unit
Tool grinding；
Crackle and deformation removal unit, are connected to the measurement unit, for being removed according to the measurement of the measurement unit
The crackle of crystal column surface after chemical mechanical grinding and deformation.
2. board is thinned in wafer according to claim 1, which is characterized in that further include transmission unit, in the amount
It surveys between unit, grinding unit, CMP unit and crackle and deformation removal unit and transmits to wafer.
3. board is thinned in wafer according to claim 1, which is characterized in that further include control unit, be connected to described grind
Unit, measurement unit, CMP unit and crackle and deformation removal unit are ground, for controlling the measurement unit to the wafer amount of progress
It surveys, and is removed for controlling the grinding unit, CMP unit, crackle and deformation according to the measurement of the measurement unit
Processing of the unit to wafer.
4. board is thinned in wafer according to claim 1, which is characterized in that the grinding unit include: corase grinding grinding head,
Middle barreling bistrique, fine grinding grinding head and polishing grinding head correspond respectively to the different degrees of grinding to wafer.
5. board is thinned in wafer according to claim 1, which is characterized in that the crackle and deformation removal unit include:
Strong oxdiative module, the region for having crackle and deformation for aoxidizing crystal column surface, makes crystal column surface have crackle or deformation
Region is oxidized to silicon dioxide layer；
Etch module, for etching the silicon dioxide layer of wafer surface oxidation generation, to remove crackle and the deformation of crystal column surface.
6. board is thinned in wafer according to claim 5, which is characterized in that dioxy of the etch module to crystal column surface
SiClx layer and 10:1 is greater than to the etching ratio of wafer.
7. board is thinned in wafer according to claim 1, which is characterized in that further include:
Cleaning unit is used for cleaning wafer.
8. a kind of wafer thining method, which comprises the following steps:
Grind wafer to be thinned；
The thickness of wafer after measurement grinding, and chemical mechanical grinding is carried out to wafer according to measurement；
Crackle and the deformation of crystal column surface are measured, and removes crackle and the deformation of crystal column surface.
9. wafer thining method according to claim 8, which is characterized in that grind when thinned wafer, including following
Step:
The wafer is roughly ground；
To the wafer carry out in grind；
Fine grinding is carried out to the wafer；
The wafer is polished.
10. wafer thining method according to claim 8, which is characterized in that when removing crackle and the deformation of crystal column surface,
The following steps are included:
Wafer is placed into Strong oxdiative solution, includes the silicon dioxide layer of crackle and deformation in crystal column surface formation；
Remove the silicon dioxide layer.
11. wafer thining method according to claim 10, which is characterized in that when removing the silicon dioxide layer, including
Following steps:
The silicon dioxide layer is etched using etching solution, the silicon dioxide layer is removed, and etching solution is to crystal column surface
Silicon dioxide layer and 10:1 is greater than to the etching ratio of wafer.
12. wafer thining method according to claim 10, which is characterized in that after removing the silicon dioxide layer, including
Following steps:
It measures the thinned degree of wafer and measures crackle and the deformation of crystal column surface, wafer is made to meet preset need.
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| CN201910665727.4A CN110416126A (en) | 2019-07-23 | 2019-07-23 | Board and wafer thining method is thinned in wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111430230A (en) * | 2020-06-10 | 2020-07-17 | 清华大学 | Substrate thinning method, substrate thinning equipment and operation method thereof |
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| CN104802071A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN109659221A (en) * | 2019-02-01 | 2019-04-19 | 中国科学技术大学 | A kind of preparation method of silicon carbide single crystal film |
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| KR20080113708A (en) * | 2007-06-25 | 2008-12-31 | 세크론 주식회사 | Apparatus and method for polishing wafer backside |
| CN104802071A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN109659221A (en) * | 2019-02-01 | 2019-04-19 | 中国科学技术大学 | A kind of preparation method of silicon carbide single crystal film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111430230A (en) * | 2020-06-10 | 2020-07-17 | 清华大学 | Substrate thinning method, substrate thinning equipment and operation method thereof |
| WO2021248951A1 (en) * | 2020-06-10 | 2021-12-16 | 清华大学 | Substrate thinning method, substrate thinning device, and operating method thereof |
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