CN110459555A - Manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect - Google Patents
Manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect Download PDFInfo
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- CN110459555A CN110459555A CN201910809140.6A CN201910809140A CN110459555A CN 110459555 A CN110459555 A CN 110459555A CN 201910809140 A CN201910809140 A CN 201910809140A CN 110459555 A CN110459555 A CN 110459555A
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- 238000000034 method Methods 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 45
- 239000010703 silicon Substances 0.000 title claims abstract description 45
- 239000013078 crystal Substances 0.000 title claims abstract description 28
- 238000005286 illumination Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 230000007547 defect Effects 0.000 title claims abstract description 16
- 238000007688 edging Methods 0.000 claims abstract description 13
- 230000009467 reduction Effects 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 114
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000004140 cleaning Methods 0.000 claims description 21
- 238000001259 photo etching Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 claims description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 11
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 238000009499 grossing Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 241000790917 Dioxys <bee> Species 0.000 claims 2
- 229910003978 SiClx Inorganic materials 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
A kind of manufacturing process method the invention discloses back side illumination image sensor crystal round fringes without silicon fiml defect belongs to field of semiconductor manufacture, and this method is by the way that a piece of wafer A with imaging sensor and another carrying wafer B to be bonded at normal temperatures and pressures；After bonding, the weak silicon fiml of mechanical edging technique removal two panels crystal round fringes bonding force is used；To 15 μm -40 μm of specific thickness, microscope macro -graph, back side illumination image sensor edge occurs wafer A mechanical reduction without silicon fiml damaging problem after bonding.The present invention realizes that a possibility that damaging to silicon fiml zero is thinned in mechanical lapping in back side illumination image sensor wafer while not increasing technique manufacturing cost.
Description
Technical field
The invention belongs to field of semiconductor manufacture, and in particular to a kind of back side illumination image sensor crystal round fringes are scarce without silicon fiml
Sunken manufacturing process method.
Background technique
The technique manufacturing process of existing back side illumination image sensor is: 1, the wafer A growth with image sensor devices
The oxide layer is carried out planarization processing, wafer A table by chemically-mechanicapolish polishing (CMP) technique by the oxide layer of 3000A-5000A
Face oxide layer removal amount 1000A-3000A, measurement wafer A inner flat degree difference guarantees less than 0.5 μm after removing edge 5mm；
2, back side illumination image sensor wafer bonding technique is by wafer A and band with image sensor devices and bonding photo-etching mark
Have bonding photo-etching mark wafer B bonding, two panels wafer bonding face be all front (wafer A front edge bonding before need into
Row edging technique, general width 2mm-3mm, 50 μm -100 μm of depth)；3, the crystalline substance of back side illumination image sensor will be finally made as
Circle A, by mechanical thinning process by its thinning back side to 15 μm -40 μm of range.
Wherein, lead to wafer since chemical-mechanical polishing mathing platform is not high to crystal round fringes planarization working ability in step 1
The edge A flatness is poor, and the bonding force at edge is caused to be less than inside wafer bonding force, and step 2 carries out mechanical reduction in wafer A
When, since the active force of mechanical emery wheel is larger, the wafer of edge can directly generate the situation of dark line or the breakage of edge silicon, this
When the defect of kind of silicon fiml breakage will lead to subsequent encapsulation, when wafer is cut, there is dark line or at edge by diamond tool sector-meeting
Damaged silicon fiml causes bigger damage, and when cutting directly results in silicon fiml residue and splashes crystal column surface, causes Particulate Pollution,
When encapsulating cutting crystal wafer, blade, which encounters particulate matter, can damage device inside wafer A, directly contribute waste product.
Summary of the invention
The purpose of the present invention is to propose to a kind of manufacturing process of the back side illumination image sensor crystal round fringes without silicon fiml defect
Method, this method is by the way that a piece of wafer A with imaging sensor and another carrying wafer B to be bonded at normal temperatures and pressures；
After bonding, the weak silicon fiml of mechanical edging technique removal crystal round fringes bonding force is used；Wafer A mechanical reduction is shown to specific thickness
Micro mirror macro -graph, back side illumination image sensor edge occur without silicon fiml damaging problem.
The present invention be above-mentioned purpose the technical solution adopted is that: back side illumination image sensor crystal round fringes are without silicon fiml defect
Manufacturing process method, which is characterized in that include the following steps, and following steps carry out in order:
Step 1: providing, to be bonded wafer A and wafer B: wafer A is identical with wafer B size, and wafer A is as device crystalline substance
Circle, inside have back side illumination image sensor, and surface is attached with silicon dioxide film, and the front of wafer A is as bonding face, Yu Jingyuan
The first photo-etching mark is provided on the bonding face of A；Wafer B is attached with oxide layer as carrying wafer, surface, and wafer B is just
Face is provided with the second photo-etching mark on the bonding face of Yu Jingyuan B as bonding face；
Step 2: wafer A is cleaned by twice RCA cleaning process, surface particles are removed, so that wafer A surface particles
Degree is greater than 0.2 μm less than 20；
Wherein, first of RCA cleaning process, temperature is 80 DEG C when cleaning, and cleaning solution uses hydrogen peroxide H2O2, water H2O
With the mixed liquor of ammonium hydroxide NH4OH, match as hydrogen peroxide H2O2: water H2O: ammonium hydroxide NH4OH=1:4:50；Second RCA cleaning
Technique, temperature is 35 DEG C when cleaning, and cleaning solution matches chlorine using the mixed liquor of hydrogen chloride HCL, hydrogen peroxide H2O2 and water H2O
Change hydrogen HCL: hydrogen peroxide H2O2: water H2O=1:2:6；
Step 3: the first photo-etching mark is aligned with the second photo-etching mark, under normal temperature and pressure conditions by wafer A and wafer B
Bonding, the first photo-etching mark and the second photo-etching mark drift rate are less than 50 μm after bonding, and the wafer after bonding is filled with nitrogen
It anneals in baking oven, 300 DEG C -400 DEG C of annealing temperature, annealing time 1h-2h；
Step 4: the wafer A after para-linkage carries out edging processing, it is 2.5mm-3mm, depth 725 that wafer A, which grinds off at edge width,
μm -745 μm of silicon guarantees that particle of the surface wafer A greater than 0.2 μm is less than 20；
Step 5: the back side wafer A carries out mechanical reduction after para-linkage after edging, it is ground to a thickness of 15 μm -50 μm, shows
Micro mirror inspection, wafer A edge-smoothing is without breakage after bonding.
Preferably, it is 200 ㎜ that the wafer A and wafer B, which choose diameter, and silicon substrate is with a thickness of 725 μm, the p-type of crystal orientation<100>
Wafer.
Preferably, it is 300 ㎜ that the wafer A and wafer B, which choose diameter, and silicon substrate is with a thickness of 775 μm, the p-type of crystal orientation<100>
Wafer.
Further, wafer A by reinforcing plasma deposition mode growth thickness is 3000A-5000A in the step 1
Silicon dioxide film, growth temperature are chemically-mechanicapolish polished less than 500 DEG C, by wafer A by CMP machine platform, removal with a thickness of
The silicon dioxide film of 1000A-3000A, removal edge 5mm place's measurement, diameter is 200 ㎜, silicon substrate is with a thickness of 725 μm of wafer A
Flatness is less than 0.5 μm.
Further, wafer A by reinforcing plasma deposition mode growth thickness is 3000A-5000A in the step 1
Silicon dioxide film, growth temperature are chemically-mechanicapolish polished less than 500 DEG C, by wafer A by CMP machine platform, removal with a thickness of
The silicon dioxide film of 1000A-3000A, removal edge 5mm place's measurement, diameter is 300 ㎜, silicon substrate is with a thickness of 775 μm of wafer A
Flatness is less than 0.2 μm.
Further, the oxidated layer thickness of the wafer B surface is 100A-300A.
Manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect, it is characterised in that: institute
Step 4 is stated, the wafer A after para-linkage carries out edging treatment process, and edger unit uses diamond blade #400, rotating speed of flail
It is 20000 revs/min.
Through the above design, the present invention can be brought the following benefits: existing back side illumination image sensor adds
Work technique is often adjusted CMP process using many experiments or bought advanced to make wafer A's to have good flatness
CMP machine platform.Current technological level, CMP machine platform have no idea to realize that the flatness at crystal round fringes is consistent with inside wafer.
So while doing many experiments or purchasing new CMP machine platform, board capability is not achieved, and flatness is still at crystal round fringes
It cannot effectively solve.Silicon fiml at the out-of-flatness of edge by the way of edging, is used diamond after being first bonded by the present invention
Knife is ground off, and the situation of dark line or silicon fiml breakage is generated at the silicon fiml for avoiding bonding force weak in mechanical reduction.The present invention is not
Increase technique manufacturing cost while, realize back side illumination image sensor wafer mechanical lapping be thinned to silicon fiml zero damage can
It can property.
Specific embodiment
The present invention relates to a kind of back side illumination image sensor wafers to use the process optimization of edging technique removal silicon fiml defect
Method.In order to illustrate more clearly of the present invention, below with reference to preferred embodiment, the present invention is described further.This field skill
Art personnel should understand that.Specifically described content is illustrative and be not restrictive below, in not departing from claim
In the case where the invention mechanism and range that are illustrated, user can carry out various changes to following parameters.In order to avoid obscuring
Essence of the invention, well known method and process are not described in detail.
Manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect, includes the following steps:
Step 1: preparing the wafer of the identical size of two panels, respectively wafer A and wafer B, two wafers can be diameter and are
200 ㎜, silicon substrate is with a thickness of 725 μm, the p-type wafer of crystal orientation<100>, and being also possible to two panels diameter is 300 ㎜, silicon substrate with a thickness of
775 μm, the p-type wafer of crystal orientation<100>, but the silicon substrate thickness and diameter of two wafers are all the same；
For wafer A as device wafers, inside has back side illumination image sensor, and the surface wafer A grows layer of silicon dioxide
Film, the front of wafer A are provided with the first photo-etching mark on the bonding face of Yu Jingyuan A as bonding face；Wafer B is brilliant as carrying
Circle, the oxide layer that surface is attached with a thickness of 100A-300A, the front of wafer B is as bonding face, the bonding face of Yu Jingyuan B
On be provided with the second photo-etching mark；
The silicon dioxide film that the specific surface wafer A is 3000A-5000A by reinforcement plasma deposition mode growth thickness,
Growth temperature is chemically-mechanicapolish polished less than 500 DEG C, by wafer A by CMP machine platform, is removed with a thickness of 1000A-3000A's
Silicon dioxide film is removed and is measured at edge 5mm, guarantees that, as selected 200 ㎜ of diameter, silicon substrate is put down with a thickness of 725 μm of wafer A
Smooth degree is less than 0.5 μm, or selection 300 ㎜ of diameter, and silicon substrate is with a thickness of 775 μm of wafer A, and flatness is less than 0.2 μm；
First photo-etching mark and the second photo-etching mark are used to do alignment mark when two panels wafer bonding；
Step 2: wafer A is cleaned by twice RCA cleaning process, surface particles are removed, so that wafer A surface particles
Degree is greater than 0.2 μm less than 20；
Wherein, first of RCA cleaning process, temperature is 80 DEG C when cleaning, and cleaning solution uses hydrogen peroxide H2O2, water H2O
With the mixed liquor of ammonium hydroxide NH4OH, match as hydrogen peroxide H2O2: water H2O: ammonium hydroxide NH4OH=1:4:50；Second RCA cleaning
Technique, temperature is 35 DEG C when cleaning, and cleaning solution matches chlorine using the mixed liquor of hydrogen chloride HCL, hydrogen peroxide H2O2 and water H2O
Change hydrogen HCL: hydrogen peroxide H2O2: water H2O=1:2:6；
Step 3: wafer A and wafer B is carried out Direct Bonding using normal temperature and pressure bonding apparatus, photo-etching mark pair is utilized
Drift rate less than 50 μm, anneal in an oven by the wafer after bonding after quasi- bonding, and 300 DEG C -400 DEG C of annealing process temperature,
Filled with nitrogen in baking oven, annealing process time 1h-2h, interface forms covalent bond, bonding force 1.5J/ after realizing two panels wafer bonding
m2-2J/m2；
Step 4: being got rid of the weak edge of two panels wafer bonding power using edging technique, the wafer A after bonding is ground
Side technique, edger unit carry out technique processing using diamond blade #400, and revolving speed is 20000 turns of revolving speed per minute.After bonding
Wafer A technological standards be that it is 2.5mm-3mm that edge, which grinds off width, the silicon that 725 μm -745 μm of depth, granularity is greater than 0.2 μm of
Grain is less than 20；
Step 5: carrying out mechanical thinning process after edging technique.The back side wafer A passes through mechanical emery wheel after bonding, is ground to
15 μm -40 μm of thickness, microscope macro -graph, wafer A edge-smoothing is without breakage after bonding.
Claims (7)
1. manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect, which is characterized in that including walking as follows
Suddenly, and following steps carry out in order:
Step 1: providing, to be bonded wafer A and wafer B: wafer A is identical with wafer B size, and wafer A is interior as device wafers
Portion has back side illumination image sensor, and surface is attached with silicon dioxide film, and the front of wafer A is as bonding face, the key of Yu Jingyuan A
The first photo-etching mark is provided on conjunction face；For wafer B as carrying wafer, surface is attached with oxide layer, the positive conduct of wafer B
Bonding face is provided with the second photo-etching mark on the bonding face of Yu Jingyuan B；
Step 2: wafer A is cleaned by twice RCA cleaning process, surface particles are removed, so that wafer A surface particles degree is big
In 0.2 μm less than 20；
Wherein, first of RCA cleaning process, temperature is 80 DEG C when cleaning, and cleaning solution uses hydrogen peroxide H2O2, water H2O and ammonia
The mixed liquor of water NH4OH matches as hydrogen peroxide H2O2: water H2O: ammonium hydroxide NH4OH=1:4:50；Second RCA cleaning process,
Temperature is 35 DEG C when cleaning, and cleaning solution matches hydrogen chloride using the mixed liquor of hydrogen chloride HCL, hydrogen peroxide H2O2 and water H2O
HCL: hydrogen peroxide H2O2: water H2O=1:2:6；
Step 3: the first photo-etching mark is aligned with the second photo-etching mark, wafer A and wafer B are bonded under normal temperature and pressure conditions,
The first photo-etching mark and the second photo-etching mark drift rate are less than 50 μm after bonding, and the wafer after bonding is in the baking oven filled with nitrogen
It anneals, 300 DEG C -400 DEG C of annealing temperature, annealing time 1h-2h；
Step 4: the wafer A after para-linkage carries out edging processing, it is 2.5mm-3mm, 725 μm of depth-that wafer A, which grinds off at edge width,
745 μm of silicon guarantees that particle of the surface wafer A greater than 0.2 μm is less than 20；
Step 5: after edging, the back side wafer A carries out mechanical reduction after para-linkage, is ground to a thickness of 15 μm -50 μm, microscope
It checks, wafer A edge-smoothing is without breakage after bonding.
2. manufacturing process method of the back side illumination image sensor crystal round fringes according to claim 1 without silicon fiml defect,
Be characterized in that: it is 200 ㎜ that the wafer A and wafer B, which choose diameter, and silicon substrate is with a thickness of 725 μm, the p-type wafer of crystal orientation<100>.
3. manufacturing process method of the back side illumination image sensor crystal round fringes according to claim 1 without silicon fiml defect,
Be characterized in that: it is 300 ㎜ that the wafer A and wafer B, which choose diameter, and silicon substrate is with a thickness of 775 μm, the p-type wafer of crystal orientation<100>.
4. manufacturing process method of the back side illumination image sensor crystal round fringes according to claim 1 or 2 without silicon fiml defect,
It is characterized by: wafer A is by reinforcing the dioxy that plasma deposition mode growth thickness is 3000A-5000A in the step 1
SiClx film, growth temperature are chemically-mechanicapolish polished less than 500 DEG C, by wafer A by CMP machine platform, are removed with a thickness of 1000A-
The silicon dioxide film of 3000A, removal edge 5mm place's measurement, diameter is 200 ㎜, silicon substrate is with a thickness of 725 μm of wafer A flatness
Less than 0.5 μm.
5. manufacturing process method of the back side illumination image sensor crystal round fringes according to claim 1 or 3 without silicon fiml defect,
It is characterized by: wafer A is by reinforcing the dioxy that plasma deposition mode growth thickness is 3000A-5000A in the step 1
SiClx film, growth temperature are chemically-mechanicapolish polished less than 500 DEG C, by wafer A by CMP machine platform, are removed with a thickness of 1000A-
The silicon dioxide film of 3000A, removal edge 5mm place's measurement, diameter is 300 ㎜, silicon substrate is with a thickness of 775 μm of wafer A flatness
It is less than 0.2 μm.
6. manufacturing process side of the back side illumination image sensor crystal round fringes according to claim 1,2 or 3 without silicon fiml defect
Method, it is characterised in that: the oxidated layer thickness of the wafer B surface is 100A-300A.
7. manufacturing process method of the back side illumination image sensor crystal round fringes according to claim 1 without silicon fiml defect,
Be characterized in that: the step 4, the wafer A after para-linkage carry out edging treatment process, and edger unit uses diamond blade #
400, rotating speed of flail is 20000 revs/min.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993490A (en) * | 2019-12-30 | 2020-04-10 | 长春长光圆辰微电子技术有限公司 | Method for realizing heterogeneous bonding of chips with different sizes |
| WO2022057013A1 (en) * | 2020-09-16 | 2022-03-24 | 武汉新芯集成电路制造有限公司 | Wafer bonding method |
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| CN101088154A (en) * | 2004-12-24 | 2007-12-12 | S.O.I.Tec绝缘体上硅技术公司 | Method for treating the surface of a wafer |
| CN101217107A (en) * | 2007-12-28 | 2008-07-09 | 上海新傲科技有限公司 | SOI preparation method of bonding and wafer thinning |
| CN102017092A (en) * | 2008-09-02 | 2011-04-13 | S.O.I.Tec绝缘体上硅技术公司 | A progressive trimming method |
| CN104733300A (en) * | 2013-12-23 | 2015-06-24 | 中芯国际集成电路制造(上海)有限公司 | Bonded wafer thinning method |
| CN103871870A (en) * | 2014-02-28 | 2014-06-18 | 武汉新芯集成电路制造有限公司 | Method for removing wafer bonding edge defect |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110993490A (en) * | 2019-12-30 | 2020-04-10 | 长春长光圆辰微电子技术有限公司 | Method for realizing heterogeneous bonding of chips with different sizes |
| WO2022057013A1 (en) * | 2020-09-16 | 2022-03-24 | 武汉新芯集成电路制造有限公司 | Wafer bonding method |
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