CN101088154A - Method for treating the surface of a wafer - Google Patents
Method for treating the surface of a wafer Download PDFInfo
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- CN101088154A CN101088154A CNA2005800448464A CN200580044846A CN101088154A CN 101088154 A CN101088154 A CN 101088154A CN A2005800448464 A CNA2005800448464 A CN A2005800448464A CN 200580044846 A CN200580044846 A CN 200580044846A CN 101088154 A CN101088154 A CN 101088154A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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Abstract
The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.
Description
Technical field
The present invention relates to two wafers that bonding (bonding) comprises semi-conducting material, be used for the structure in microelectronics, optics or optoelectronics field with manufacturing.
More properly, the present invention relates to activate the bonding surface that (activating) treats at least one wafer in two wafers of bonding, even it may oxidized and/or be injected by atomic species.
Background technology
Described atomic species injects and can form weak district at the inherent desired depth of the wafer that is called " alms giver " wafer place.
This " the Smart-Cut that is called
TM" method of (registered trade mark) is known for the skilled person.For example, works " Silicon-on-Insulator Technology, the Materials to VLSI " second edition that can publish with reference to Jean-Pierre Colinge work, Kluwer Academic Publishers is the 50th page and 51 pages.
By injecting, shift from the oxidized surface of silicon donor wafer and will comprising that the surface oxide layer that obtains from described donor wafer and the Thin-film key of top silicon thin layer are incorporated into the silicon wafer that is called " reception " wafer, can make with the structure known to the abbreviation SOI (silicon-on-insulator, silicon-on-insulator).
The electronic building brick that forms on this type of divert film trends towards microminiaturization day by day, impels substrate manufacturer when keeping excellent quality, makes the SOI type substrate with thinner top silicon layer.
Therefore, key is to improve the quality of transfer layer and then improvement is peeled off and transfer techniques.
Bonding quality is the basis that good layer shifts, and bonding quality is mainly measured by the bonded energy of bonding two wafers here.
As mentioned below, generally acknowledge that now some pollutant that wafer surface exists has the effect that reduces bonded energy.
Implantation step has generally been introduced the hydrocarbon-type pollutant in wafer surface.If have isolated particle or local surfaces defective, transfer at separating film and with it receive wafer after, this pollution will cause forming blibbing (blisters), perhaps even form non-transition range.
Therefore, contact with bonding for guaranteeing good quality, it is very crucial to remove these pollutants.
In addition, Aditya Agarwal, T.E.Haynes, V.C.Venezia, O.W.Holland and D.J.Eaglesham's is entitled as " Efficient production of silicon-on-insulatorfilms by co-implantation of He
+With H
+" paper; Applied Physics Letters the 72nd volume (1998) 1086-1088 pages or leaves, it shows, compares with using simple the injection; although total can be much lower with the implantation dosage of the method for hydrogen and the common injection of helium, but more in the quantity of the bubble type defective at bonded interface place.
And, show that more difficult manufacturing has the SOI type substrate of very thin buried oxide layer, promptly thick less than 50nm (50 nanometer), because they are more responsive to the appearance of bubble type defective.
Therefore, improve bonded energy to widen described " Smart-Cut
TM" condition of work and the application possibility of method be also very important.
At last, also needing to improve bonded energy shifts to impel suitable separation and layer.
In fact, the pollutant that the bonded interface place exists will cause this at the interface rather than the floor at place, weak district separate, thereby on the reception wafer, produce defective (non-transition range), it is corresponding to the residue on the donor wafer.
Bonded energy is low more, and the amount of non-transition range is many more.
And when bonded energy was low, the bonding ripple more was difficult to arrive edge with the bonding section start relative Waffer edge on diameter, at this regional observation to more defective.
Prior art discloses the surface treatment method before several bondings, to improve bonding and to remove all particles for the treatment of that the bonding wafer surface occurs.
Such processing generally comprises two consecutive steps, that is:
A) cleaning and the chemically sensitized first step; And
In second step of b) cleaning, second step implemented before bonding immediately, hereinafter referred to as " cleaning before the bonding ".
Clean in the step a) and treat that the purpose of bonding surface is:
● make described surface hydrophilic;
● remove pollutant, particularly inject the hydrocarbon-type pollutant that the back wafer surface occurs;
● remove isolated particle;
● limiting roughness (atom level) reaches tight contact to guarantee wafer.
The water-wet behavior on surface promotes bonding and can increase bonded energy, the appearance of restriction Waffer edge defective.
Prior art comprises such cleaning and Activiation method, is called " RCA ", and it is to treat bonding surface with following continuous processing:
● be known as first solution (standard cleaning 1) of " SC1 ", comprise ammonium hydroxide (NH
4OH), hydrogen peroxide (H
2O
2) and the mixture of deionized water;
● be known as second solution (standard cleaning 2) of " SC2 ", comprise hydrochloric acid (HCl), hydrogen peroxide (H
2O
2) and the mixture of deionized water.
First solution is mainly used in removes the isolated particle that occurs on the wafer surface, and makes surface hydrophilic, and second solution is used to remove metal pollutant.
Yet, showing that after carrying out this processing, the wafer surface roughness ratio is bigger before handling sometimes, this has changed their bonded energy significantly.
In addition, patent application WO2005/096369 discloses a kind of cleaning method to the wafer oxidized surface, is used for it is bonded to another wafer.This method is used ammonia solution (ammoniasolution) (NH
4OH) and hydrogen peroxide (H
2O
2) mixture, can when removing isolated particle, avoid producing surface roughness.
And, though it should be noted that above-mentioned Smart-Cut
TMMethod comprises a plurality of cleaning steps, but the preceding cleaning step b of bonding) very special, because it has been predetermined the quality of the substrate that obtains after the transfer layer step.
This step purpose is to remove at cleaning step a) and the particle that deposits during the gap between the bonding.Its purpose also is to strengthen the hydrophily of wafer because with cleaning step a) and the time interval between the bonding increase, the hydrophily of wafer will obviously reduce.
Cleaning step b) generally implements, for example referring to french patent application FR-A-2 854493 by scrub the surface that (brushing) treat bonding with deionized water solution.
For above-mentioned two-stage process, very unfortunate, the feasible more bonding surface for the treatment of is hydrophilic with restriction of transfer defects count, and surface roughness increases manyly more, has therefore increased the possibility that bubble type defective occurs.
In above-mentioned RCA type is handled, by using SC1 solution can obtain higher hydrophily when high temperature (＞70 ℃).Yet in contrast, processed surface is with etched, and this can increase its roughness, and the increase of this surface roughness increases along with the increase of SC1 bath temperature.
At last, when using above-mentioned method, other restraining factors also occur,, must be with two step a) and b because for the hydrophily that keeps processed wafer with improve bonded energy to greatest extent) between the time interval reduce to minimum.If implement this manufacture method with commercial scale, when the pending wafer of operation batch, this will produce other restraining factors.
Summary of the invention
Therefore, the object of the invention is to overcome above-mentioned shortcoming, and in the cleaning step process chemokinesis is introduced on the surface before bonding, preferably implements at ambient temperature, to simplify previous cleaning step a) or even save this step.
If keep previous cleaning step a), the object of the invention also is, allows to increase this cleaning step a) and clean and activate wafer holding time between the step before the bonding of the present invention, and still keep high bonded energy behind two wafer bondings.
At last, activation step of the present invention must successfully be integrated in the industrially preparing process of existing SOI substrate equally.
For this reason, the present invention relates to a kind of processing is called first wafer of " alms giver " wafer and is called one of second wafer of " receptions " wafer or another or two methods that are called " bonding " surperficial surface, these two wafers are used for the structure in optics, electronics or optoelectronics field with mutual bonding with manufacturing.
According to the present invention, this method comprises by comprising the aqueous solution (NH at least about 97% ammonia
4Solution OH), that be called " surface processing solution " puts on described bonding surface, (immediately prior to) implements to clean and activate step immediately before described donor wafer of bonding and reception wafer, wherein the aqueous solution of ammonia is preferably deionized water solution, weight concentration scope approximately from 0.05% to 2%.
Other advantage of the present invention but be not that restrictive feature is listed as follows alone or in combination:
● Treatment Solution is by the aqueous solution (NH of ammonia
4OH) constitute, be preferably deionized water solution, weight concentration scope approximately from 0.05% to 2%;
● Treatment Solution is by the aqueous solution (NH of about 97% ammonia
4OH) and about 3% chelating agent and/or surfactant constitute, wherein the aqueous solution of hydrogen is preferably deionized water solution, its weight concentration scope approximately from 0.05% to 2%;
● the solution (NH of ammonia
4OH) the weight concentration scope in water approximately from 0.5% to 1.6%, preferably more near 0.8%;
● by at 70 ℃ or more apply described surface processing solution under the low temperature and implement to clean and activate step;
● when donor wafer is positioned on the bonding machine with the reception wafer, apply surface processing solution;
● surface processing solution directly puts on the bonding machine, and the duration scope is preferably from 10 seconds to 2 minutes;
● apply described surface processing solution simultaneously and scrub pending bonding surface, to implement described cleaning and to activate step;
● at least one in two bonding surfaces is coated with oxide layer;
● before bonding, donor wafer stands atomic species and injects, and defines the weak district of thin layer to be transferred with formation.
The invention still further relates to a kind of manufacturing and be used for the method for the structure in optics, electronics or optoelectronics field.
According to the present invention, said method comprising the steps of:
-carry out the atomic species injection to have wafer oxide layer, that be called " alms giver " wafer on its surface, to form the weak district that defines thin layer therein;
-according to above-mentioned method, before bonding, clean and activate the oxidized surface of described donor wafer immediately;
-with the described activated surface of donor wafer be bonded to another be called " reception " wafer, alternatively on the surface of oxidized wafer, can also clean and activate described surface according to above-mentioned method alternatively; And
-at place, described weak district described thin layer is separated with described oxide layer, they are peeled off and transfer to described reception wafer.
Further feature of the present invention is listed as follows alone or in combination:
● described method is included in consolidation (consolidating) annealing steps between bonding step and the separating step; And
● donor wafer is made by semi-conducting material, silicon or stress silicon.
The method is especially allowed manufacturing semiconductor on insulator type structure or silicon-on-insulator (SOI) type structure.
Description of drawings
From following description with reference to the accompanying drawings, other features and advantages of the present invention will be more apparent, and accompanying drawing shows possible embodiment, but not be restrictive.
In the drawings:
● Fig. 1 a to 1d illustrates the layer that is used to make SOI type substrate and peels off key step with transfer method;
● Fig. 2 is a schematic diagram of measuring the method for bonded energy between two wafers;
● Fig. 3 passes through the wafer of " control " cleaning and Activiation method or preceding cleaning of process bonding of the present invention and Activiation method processing respectively for several groups, show bonded energy τ and annealing in process functional relationship of temperature curve chart between two wafers;
● Fig. 4 passes through the wafer of " control " cleaning and Activiation method or preceding cleaning of process bonding of the present invention and Activiation method processing respectively for several groups, show the schematic diagram of measuring transfer defects count result in the transfer layer; And
● Fig. 5 is for the batch wafer of handling through first clean, second cleaning subsequently and activation, show the variation of bonded energy τ between two wafers, wherein second cleaning and activation are handled and are carried out immediately before bonding, but do not carry out simultaneously with first cleaning, described second is treated to " control " cleans or the processing consistent with the present invention.
Embodiment
Main purpose of the present invention is to reduce the defects count and the surface roughness of at least one wafer in two wafers treating mutual bonding, to increase the bonded energy between wafer.
More specifically, the present invention can be applicable to have the wafer of oxide coating.Described oxide is " generating naturally ", promptly produces by wafer oxidation in outside air, or extra, for example by described wafer heat treatment or deposited oxide layer are produced.
The present invention especially is applied to make SOI type substrate.
Each step of this manufacture method below is described.
With reference to figure 1a, first step is the wafer 13 that oxidation is made by semi-conducting material, to be formed on the donor wafer 10 that the surface has oxide skin(coating) 11.
In general, described oxidation is produced by heat treatment or deposited oxide layer, is SiO when wafer 13 is made by silicon for example
2Layer.
With reference now to Fig. 1 b,, it is for example carried out hydrogen to one of oxidized surface by donor wafer 10 and/or the helium atom kind is injected.
Select the energy and the dosage of described injection, with at the lower face desired depth place of donor wafer 10, be to form weak district 15 in that wafer 13 is inner more accurately.Thereby form thin layer 16, define the one side and define opposite side by oxide skin(coating) 11 by weak district 15.
The oxidized surface of the donor wafer 10 that process is injected is with reference number 12 marks.Then the preceding clean of bonding is carried out on the surface 22 of this surface 12 and/or " reception " wafer 20, below will go through.
With reference now to Fig. 1 c,, then surface 12 is contacted with 22 and with molecular linkage method bonding.
In this stage, can also selectively implement annealing steps to strengthen the bonded interface 17 between donor wafer 10 and the reception wafer 20.
At last,, provide enough heat energy, mechanical energy and/or chemical energy, the nubbin 18 of thin layer 16 from donor wafer separated along weak district 15 with reference to figure 1d.
Thereby obtain the semiconductor-on-insulator structure shown in Fig. 1 d; The thin layer of peeling off from donor wafer 10 16 forms semiconductor portions, and the oxide skin(coating) 11 of its below forms the electric insulation part.This structure is by reference number 30 marks.
Can also selectively implement to use the finishing step of for example chemico-mechanical polishing at last, to remove any defective or the roughness that in separation of thin layers 16 processes, occurs.
The structure 30 that finally obtains will be applied to microelectronics, optics or optoelectronics field.
Though do not illustrate in the drawings, receive wafer 20 and can also selectively be coated with oxide skin(coating), particularly the oxide that generates naturally.
The method for the treatment of bonding surface is cleaned and activated to the object of the invention before being to provide a kind of bonding, mentions the surface 12 and/or 22 in the example more than promptly.The method is not only removed pollutant or isolated particle, also activates and treats bonding surface.
Then when making the contact of two wafers,, then can strengthen adhering to of they if bonding surface separately (or at least one of them) is activated.Described hydrophily of adhering to by treating bonding surface promotes, and it is usually corresponding to the interaction of molecules between the hydrogen atom for the treatment of the appearance of bonding wafer surface.
The paper of surface activation phenomenon and hydrophilic bonding for example can be described with reference to people such as R.Stengl, " A model for the silicon wafer bonding method ", Japanese Journal ofApplied Physics, in October, 1989, the 28th the 10th phase of volume, the 1735-1741 page or leaf.
According to the present invention, the applicant observes, use two of specific solution-treated treat the bonding surface of bonding wafer or described surface at least one of them, can increase the bonded energy between described two wafers.Hereinafter with claim in, this solution is called as " surface treatment " solution.
Described surface processing solution comprises the aqueous solution (NH at least about 97% ammonia
4OH), be preferably deionized water solution, weight concentration scope approximately from 0.05% to 2%.
According to first embodiment of the invention, surface processing solution is by the aqueous solution (NH of ammonia
4OH) constitute, be preferably deionized water solution, weight concentration scope approximately from 0.05% to 2%.
The solution of described ammonia is pure solution, and the concentration of metal pollutant type impurity (copper, iron, chromium, titanium, nickel, aluminium) and/or alkaline pollutant (lithium, sodium, calcium, potassium etc.) is no more than 10ppt (part per trillion) for each element in the ie in solution.
According to second embodiment of the invention, the surface processing solution of use is made of the solution of above-mentioned about 97% ammonia and about 3% chelating agent and/or surfactant.
Described chelating agent is used for the pollutant of adhesive solution such as metal or ion, and this pollutant contains in the industrial ammonia of being everlasting, and the risk of catching in the bonded interface maintenance is arranged, and changes the electrical characteristics that finally make substrate thus.Surfactant can improve the efficient of removing the particle may cause forming blibbing.
The weight concentration of the solution of ammonia is preferably in 0.5% to 1.6% scope, more preferably near 0.8%.
Because industrial enforcement is simpler, the solution of above-mentioned ammonia advantageously uses at ambient temperature.
Yet it also can be used on higher temperature, preferably is no more than 70 ℃.Under higher temperature, surface roughness significantly increases, and causes bubble type defects count to increase.
Above-mentioned cleaning and activation were handled before bonding and are carried out immediately, preferably directly carried out on the bonding machine, to activate the hydrophily of wafer that contacts again, even the time interval of a few hours is arranged behind the cleaning step, below will describe in detail.
Activate solution and can directly be distributed on the pending wafer and need not scrub, perhaps directly be distributed to the brush that is used to activate, perhaps before carrying out follow-up scrubbing, be distributed on the wafer.
This scrubs technology and is for example having description among the above-mentioned FR-A-2 854493.
The solution of ammonia is for example used dispense arm, directly flows to bonding apparatus with the speed of 1.51/min (rise/minute) magnitude, and preferred transport cycle continues 10 seconds to 2 minutes, more preferably 30 seconds to 1 minute.
In a modified example, the solution of ammonia can distribute from specific cleaning equipment, for example with spraying (" single-chip " type equipment) or with dipping bath (" workbench wets " type equipment).
The applicant passes through " control " respectively and cleans and Activiation method is handled or the wafer handled through the inventive method with several groups, at the interface bonded energy between two wafers is compared research.
The applicant has used a kind of technology of accurate measurement bonded energy, and this technology is proposed in the document that is entitled as " Silicon on insulator by wafer bonding " (J Electrochem Soc, the 138th volume, the 341st page (1991)) by Maszara.
According to this technology shown in Fig. 2, the applicant inserts blade 40 in one or more edges of the wafer 10 that contacts with each other and 20 sub-assemblies, at bonded interface 17 places.
Apply mechanical force along the direction that is parallel to 17 planes, interface by blade 40, cause the part of two wafers 10 and 20 to break away from bonding, and certain distance is extended in the zone that causes breaking away from bonding.
Length L between the outward flange of wafer 10,20 and the disengaging bonding halt corresponding to by the blade 40 local length and the regional development length sums of disengaging bonding that break away from the bonding zones, indicates the bonded energy that exists between two wafers 10 and 20 by it.
The termination that breaks away from bonding is during corresponding to the balance between bonded energy and the strain that characterizes the disengaging bonding.
Can calculate average bonded energy τ from the length L and the relation between the surface energy that break away from the bonding zone.
For example, can be with reference to the following formula of the document of taking from Maszara:
Wherein, E is the Young's modulus of material at the interface between two wafers 10 and 20;
Y is half of thickness of knife edge;
T is the thickness of each wafer.
Described comparative studies is implemented with several structures, and structure wherein comprises two 8 inches (200mm) silicon wafers, one of them oxidized and process hydrogen ion implantation step, and described two wafers are combined with atomic linkage.
The curve of Fig. 3 shows the result of acquisition.
Bonded energy τ between two wafers records with method described above.
The functional relation that Fig. 3 shows bonded energy τ and temperature and carries out 2 hours optional annealing in process (being called " consolidate and handle ").
Some structures are handled (result who obtains during near 20 ℃ when temperature) without continuous consolidation the later, and other structure is carried out 2 hours described processing under different temperatures.
Dotted line plots and shows from the bonding surface of wafer simultaneously through water rinse and scrub and activate the result that the batch handled obtains, and this was handled before bonding and implements immediately.This processing is being handled hereinafter referred to as " control ".
Solid line plots the result who obtains through the batch of handling according to cleaning of the present invention and activation from the bonding surface of wafer is shown.
This processing of implementing immediately before bonding is by applying the deionized water solution (NH that weight concentration is 0.5% ammonia at ambient temperature
4OH) constitute, described solution is distributed on the brush when scrubbing wafer.
These presentation of results, higher with the value of the bonded energy τ that Activiation method of the present invention obtained, irrelevant with the temperature of implementing follow-up consolidation processing.Handle for the consolidation more than 300 ℃, the bonded energy value increases manyly.
Along weak district 15 after separatings,, carry out second comparative studies for the transfer defects count that occurs in MEASUREMENTS OF THIN 16 and the oxide skin(coating) 11.
The used similar batch wafer of use and test described above is studied.
Fig. 4 shows the result of this research.
Ordinate is represented the transfer defects count N that each wafer records.
Abscissa is represented the result that obtains in batches from following two, at first is control Te in batches, wherein uses above-mentioned " control " method to implement surface treatment step, secondly is I in batches, wherein as the associated description of Fig. 3, and according to the invention process cleaning and activation step.
Mean transferred defects count N in first kind of situation is 4.09, and in second kind of situation near 0.83.
Bonding surface at donor wafer and reception wafer stands to transfer to the thin layer that receives on the wafer after the activation processing of the present invention, compares with the thin layer of acquisition after " control " processing, and the transfer defective decreased average that is had is extremely near 1/5.
At last, carry out the comparative studies of tertiary system row, purpose is the functional relation in the time interval between the value of bonded energy τ between measurement donor wafer and the reception wafer and the first conventional cleaning step for the treatment of bonding surface and the complete bonding (bonding proper), the wherein oxidized and injection of donor wafer, described wafer also stands surface treatment immediately and activates step before bonding.
Two wafers are made by silicon, 8 inches of diameters (200mm).
First clean is above-mentioned RCA type.
Implement cleaning of the present invention and activate processing by scrubbing in the solution of the ammonia that dilutes, wherein the weight concentration in deionized water is lower than 0.5%.
The block curve of painting is represented from the result through the acquisition of " control " surface-treated wafer among Fig. 5, and this handles with respect to Fig. 3 and Fig. 4 and describes.
The result of curve representation shown in the dotted line from obtaining through wafer according to cleaning of the present invention and activation processing.
When these presentation of results used processings of the present invention, not only bonded energy τ increased, and from first clean and last bonding between 0 to 14 hour 30 time interval in, bonded energy has only slightly and reduces, bonded energy is stablized in time afterwards.
Generally speaking, the applicant verified peel off and the method for transfer layer in implement the importance of cleaning of the present invention and Activiation method, especially for making SOI type substrate.
Method of the present invention can increase bonded energy, this means that first implementation criteria that cleans that carry out a certain period before bonding can be so strict, even can it is discarded fully.
This can make the stage of surface preparation of carrying out before complete bonding on the production line simplify and homogenizing.
In addition, Activiation method of the present invention can reduce to the transfer defects count of Waffer edge average every (per plate) and be less than 1 level, and this improves the quality that is used for making therein future the thin layer of electronic building brick significantly.
At last, the present invention is not limited to the Activiation method of two silicon wafers of bonding, and wherein at least one wafer is coated with silicon oxide layer, and the present invention may also extend into any type material such as stress silicon or other can be used for Smart-Cut
TMThe semi-conducting material of technology.
Claims (16)
1, a kind of processing is called first wafer (10) of " alms giver " wafer and is called one of second wafer (20) of " reception " wafer or another or two surfaces (12 that are called " bonding " surface, 22) method, these two wafers are with mutual bonding, be used for optics with manufacturing, the structure in electronics or optoelectronics field, this method feature is: it comprises by to described bonding surface (12,22) apply the solution that is called " surface treatment ", in the described donor wafer of bonding (10) with receive the cleaning that wafer (20) implements before immediately and activate step, this solution comprises the aqueous solution (NH at least about 97% ammonia
4OH), be preferably deionized water solution, weight concentration scope approximately from 0.05% to 2%.
2, according to the method for claim 1, it is characterized in that: this Treatment Solution is by the aqueous solution (NH of ammonia
4OH) constitute, be preferably deionized water solution, weight concentration scope approximately from 0.05% to 2%.
3, according to the method for claim 1, it is characterized in that: this Treatment Solution is by the aqueous solution (NH of about 97% ammonia
4OH) and about 3% chelating agent and/or surfactant constitute, wherein the aqueous solution of ammonia is preferably deionized water solution, weight concentration scope approximately from 0.05% to 2%.
4, according to the method for aforementioned arbitrary claim, it is characterized in that: the aqueous solution (NH of this ammonia
4OH) the weight concentration scope that has approximately from 0.5% to 1.6%.
5, according to the method for claim 4, it is characterized in that: the aqueous solution (NH of this ammonia
4OH) weight concentration that has is near 0.8%.
6, according to the method for aforementioned arbitrary claim, it is characterized in that: implement to clean and activate step by apply described surface processing solution 70 ℃ or following temperature.
7, according to the method for aforementioned arbitrary claim, it is characterized in that:, apply surface processing solution when donor wafer (10) with when receiving wafer (20) and being positioned on the bonding machine.
8, according to the method for aforementioned arbitrary claim, it is characterized in that: the time range that applies surface processing solution was from 10 seconds to 2 minutes.
9, according to the Activiation method of aforementioned arbitrary claim, it is characterized in that:, implement described cleaning and activate step by applying described surface processing solution simultaneously and scrubbing pending bonding surface (12,22).
10, according to the method for aforementioned arbitrary claim, it is characterized in that: at least one is coated with oxide skin(coating) in two bonding surfaces (12,22).
11, according to the method for aforementioned arbitrary claim, it is characterized in that: before bonding, donor wafer (10) is injected through atomic species, defines the weak district (15) of thin layer to be transferred (16) with formation.
12, a kind of manufacturing is used for the method for the structure (30) in optics, electronics or optoelectronics field, it is characterized in that it may further comprise the steps:
-atomic species is injected the surface have in wafer oxide skin(coating) (18), that be called " alms giver " wafer (10), to form the weak district (15) that defines thin layer (16) therein;
-according to the method for aforementioned arbitrary claim, before bonding, clean and activate the oxidized surface (12) of described donor wafer (10) immediately;
-with the described activated surface (12) of donor wafer (10) be bonded to be called " reception " wafer, the surface (22) of oxidized another wafer (20) alternatively, described surface (22) are cleaned and activate according to the method for aforementioned arbitrary claim alternatively; And
-in described weak district (15) described thin layer (16) is separated with described oxide skin(coating) (18), they are peeled off and transfer to described reception wafer (20).
13, according to the method for claim 12, it is characterized in that: it is included in the annealing steps of consolidating between bonding step and the separating step.
14, according to the method for the manufacturing semiconductor-on-insulator structure (30) of claim 12 or 13, it is characterized in that: donor wafer (10) is made by semi-conducting material.
15, according to each method in the claim 12 to 14, it is characterized in that: donor wafer (10) is made by stress silicon.
16, according to the method for manufacturing silicon-on-insulator (SOI) the type structure (30) of claim 14, it is characterized in that: donor wafer (10) is made by silicon.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0413930 | 2004-12-24 | ||
| FR0413922 | 2004-12-24 | ||
| FR0413930A FR2880186B1 (en) | 2004-12-24 | 2004-12-24 | PROCESS FOR PROCESSING A WAFER SURFACE |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101088154A true CN101088154A (en) | 2007-12-12 |
| CN100568484C CN100568484C (en) | 2009-12-09 |
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ID=34953368
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005800448464A Expired - Fee Related CN100568484C (en) | 2004-12-24 | 2005-12-21 | The wafer surface processing method |
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| Country | Link |
|---|---|
| CN (1) | CN100568484C (en) |
| FR (1) | FR2880186B1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102396051A (en) * | 2009-04-21 | 2012-03-28 | S.O.I.Tec绝缘体上硅技术公司 | Method to thin a silicon-on-insulator substrate |
| CN104412360A (en) * | 2012-06-28 | 2015-03-11 | 索泰克公司 | Method for manufacturing composite structure by metal/metal combination |
| CN105118804A (en) * | 2015-09-29 | 2015-12-02 | 厦门大学 | Method of preparing germanium on insulator by passivating ultrathin silicon film |
| CN110459555A (en) * | 2019-08-29 | 2019-11-15 | 长春长光圆辰微电子技术有限公司 | Manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect |
| CN112670170A (en) * | 2020-12-30 | 2021-04-16 | 长春长光圆辰微电子技术有限公司 | Method for improving bonding force of silicon wafer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3136108B1 (en) * | 2022-05-25 | 2024-04-19 | Commissariat Energie Atomique | Direct bonding process assisted by cationic elements |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3187109B2 (en) * | 1992-01-31 | 2001-07-11 | キヤノン株式会社 | Semiconductor member and method of manufacturing the same |
| JP3697106B2 (en) * | 1998-05-15 | 2005-09-21 | キヤノン株式会社 | Method for manufacturing semiconductor substrate and method for manufacturing semiconductor thin film |
| US7235461B2 (en) * | 2003-04-29 | 2007-06-26 | S.O.I.Tec Silicon On Insulator Technologies | Method for bonding semiconductor structures together |
-
2004
- 2004-12-24 FR FR0413930A patent/FR2880186B1/en not_active Expired - Fee Related
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2005
- 2005-12-21 CN CNB2005800448464A patent/CN100568484C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102396051A (en) * | 2009-04-21 | 2012-03-28 | S.O.I.Tec绝缘体上硅技术公司 | Method to thin a silicon-on-insulator substrate |
| US8962492B2 (en) | 2009-04-21 | 2015-02-24 | Soitec | Method to thin a silicon-on-insulator substrate |
| CN102396051B (en) * | 2009-04-21 | 2015-05-06 | Soitec公司 | Method to thin a silicon-on-insulator substrate |
| CN104412360A (en) * | 2012-06-28 | 2015-03-11 | 索泰克公司 | Method for manufacturing composite structure by metal/metal combination |
| CN104412360B (en) * | 2012-06-28 | 2016-11-09 | 索泰克公司 | Method for manufacturing composite structure by metal/metal combination |
| US9905531B2 (en) | 2012-06-28 | 2018-02-27 | Soitec | Method for producing composite structure with metal/metal bonding |
| CN105118804A (en) * | 2015-09-29 | 2015-12-02 | 厦门大学 | Method of preparing germanium on insulator by passivating ultrathin silicon film |
| CN110459555A (en) * | 2019-08-29 | 2019-11-15 | 长春长光圆辰微电子技术有限公司 | Manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect |
| CN112670170A (en) * | 2020-12-30 | 2021-04-16 | 长春长光圆辰微电子技术有限公司 | Method for improving bonding force of silicon wafer |
| CN112670170B (en) * | 2020-12-30 | 2024-02-02 | 长春长光圆辰微电子技术有限公司 | Method for improving bonding force of silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2880186B1 (en) | 2007-07-20 |
| FR2880186A1 (en) | 2006-06-30 |
| CN100568484C (en) | 2009-12-09 |
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