TW201005883A - Method for manufacturing soi wafer - Google Patents

Abstract

Disclosed is a process for producing an SOI wafer that can efficiently remove an ion-implanted defect layer present in an ion-implanted layer near a flaked face flaked by an ion implantation flaking method, can ensure the in-plane evenness of a substrate, and can realize lowered cost and enhanced throughput. The process for producing an SOI wafer comprises at least the step of providing a laminated substrate comprising a silicon wafer or a silicon wafer with an oxide film, in which an ion-implanted layer has been formed by implanting a hydrogen ion, a rare gas ion, or both the hydrogen ion and the rare gas ion, and a handle wafer stacked on the silicon wafer, the step of performing peeling along the ion-implanted layer to transfer the silicon wafer onto the handle wafer and thus to form a separated SOI wafer, the step of immersing the separated SOI wafer in an ammonia hydrogen peroxide water, and the step of heat treating the separated SOI wafer immersed in the ammonia hydrogen peroxide water at a temperature of 900 DEG C or above and/or the step of subjecting a thin film layer of silicon of the separated SOI wafer immersed in the ammonia hydrogen peroxide water to CMP polishing by a thickness of 10 to 50 nm.

Description

201005883 VI. Description of the Invention: [Technical Field] The present invention relates to a method for fabricating an SOI wafer, and more particularly to an SOI wafer for improving the surface of a thin film by ion implantation. The manufacturing method 'and the method of washing the glass treated surface subjected to sand blasting. Φ [Prior Art] In order to reduce parasitic capacitance, increase the speed of equipment, and save power, a Silicon on Insulator (SOI) substrate is widely used. In recent years, in order to make a completely depleted layered SOI device, there has been an increase in demand for a thin film SOI having an SOI layer (矽 layer) of 10 Å or less. This is because the SOI layer is thinned and the speed of the device can be expected to increase. With the thinning of the SOI layer, the required in-plane film thickness is required to be uniform. A general thin film SOI wafer is transferred from a donor side to a processing side along a hydrogen ion implantation interface by previously implanting hydrogen ions into a donor wafer and then bonding it to the processing wafer. The SOITEC method or the SiGen method is used. However, in the transferred tantalum film, an ion implantation defect layer (an amorphous layer) of about 0.1 μm remains, and a number of nm or more measured by RMS is introduced into the surface of the film. Face roughing (see, for example, Non-Patent Document 1). Among them, the so-called SOITEC method allows the donor and the operation of two wafers to be bonded at room temperature 201005883 and then heated to near 500 °C, forming a hole called a microcavity at the hydrogen injection interface and performing thermal stripping and transfer. The method of printing a film. On the other hand, the so-called SiGen method uses surface plasma activation treatment as a bonding donor. Before processing two wafers, it is bonded at room temperature, at which time high bonding strength is achieved, and low temperature is applied as needed. (A method of transferring a film by applying a mechanical impact to the hydrogen ion implantation interface after heat treatment at 30 (about TC). The SiGen method is a process which is lower in temperature than the SOITEC method, and therefore is suitable for manufacturing a thermal expansion coefficient. The wafer is repaired by a bonding method (for example, a ruthenium on quartz: SOQ), wherein the SOITEC method or the SiGen method has an introduced ion implantation defect layer in the surface portion of the peeling surface due to ion implantation. A method of removing the defect layer to smooth the surface has been proposed. The first method is to remove the ion implantation defect layer by honing about 0.1 μm of the thickness of the ion implantation defect layer. However, the method is honed. It is not uniform, and there is a problem that it is difficult to obtain the in-plane uniformity of the residual film thickness. @ As for other methods, it is also considered to restore the damaged layer by high-temperature heat treatment. Crystallinity, followed by a method of removing tens of nm honing called contact polishing to remove surface irregularities. There is also a report of surface smoothing by a step of contact polishing using hydrogen gas in an atmosphere gas (refer to, for example, non- 'Patent Document 2'. However, due to the application of the high-temperature hydrogen heat treatment step, new problems such as metal contamination or substrate warpage, increase in manufacturing cost, and decrease in yield are caused. In addition, it is difficult to obtain inter-substrate due to hydrogen etching. -6- 201005883 in the surface of the substrate. The disadvantage of uniformity of film thickness. The SOI wafer that processes low-melting substances other than germanium (quartz, glass, etc.) cannot be subjected to high-temperature heat treatment, so the problem is more serious. It is also reported that the ruthenium film of the SOI wafer which is generally produced by the hydrogen ion implantation method (SOITEC method or SiGen method) is on the surface immediately after the transfer, and when the range of Ιχίμιη is observed by AMF, there is about 8 nm expressed by RMS. The surface roughness and the peak-to-valley (PV) are irregularities of about 64.5 nm (φ, for example, refer to Non-Patent Document 3). It is considered that if it is narrow, such as 1 X 1 μηη, If there is a bump of 64.5 nm, it is considered that the wafer will have a larger unevenness (100 nm or more). Therefore, it is necessary to reduce the in-plane roughness of the surface and to perform SiO 2 based substrates and parts such as glass and quartz. In the case of atomization 'frost treatment, a sandblasting method is used. This method is a method for roughening the surface of the treated surface by blowing alumina or cerium oxide micropowder, and has been widely used. Various uses. • However, in the field of electronic materials or devices, the matte surface produced by these methods still has some problems. One of them is the problem of particles (foreign matter), which is finally left on the surface treated with blasting powder. , or dust generated by the acute angle portion of the roughened surface or the broken or damaged portion. Most of these problems are not compatible with general cleaning. Moreover, the metal pollution caused by this foreign matter is particularly serious in the field of electronic materials. In particular, in the case of semiconductors used in the field of atomization, the particle problem is fatal. For example, a quartz boat such as a wafer used in a diffusion furnace or the like has a 201005883 atomization treatment in order to prevent the wafer from adhering to the groove of the holding wafer, but the metal is simultaneously applied to the fine particles due to the high temperature process. It is also necessary to think about pollution. In addition, a transparent substrate such as SOQ (Silver Capillary) or SOG (Glass Capillary) allows the substrate recognition sensor of various devices to recognize the substrate, and the amount of particles is greatly increased when the substrate is subjected to atomization treatment on the back surface of the substrate. The problem. In order to remove the particles after the blasting treatment, a washing step is performed after the blasting treatment. This washing step is performed by, for example, HF washing, but the surface of the glass or the like which is surface-activated by washing with HF and washed, and the fine glass or the like which is free of the surface is adhered to the surface to deteriorate the degree of the fine particles. Patent Document 4). Further, when the particles are washed for a long period of time at a high concentration of HF in order to remove the fine particles, the surface to be atomized is extremely smooth at the same time, and the problem of reducing the roughness is also caused. [Non-Patent Document 1] B. Asper "Basic Mechanisms involved in the Smart-Cut (R) process", Microelectronics Engineering, 36, p23 3 (1 997) [Non-Patent Document 2] Nobuhiko Sato and Takao Yonehara ❹ "Hydrogen annealed" Silicon-on-insulator", Appl Phys Lett Vol 65, pp 1 924 (1 994) [Non-Patent Document 3] "Science of SOI" Chapter 2, Reaiize Corporation [Non-Patent Document 4] The Science of Chapter 4 The present invention is directed to the above problems, and an object of the present invention is to provide a method for fabricating an SOI wafer by ion implantation. The peeling method efficiently removes the ion implantation defect layer existing in the ion implantation layer in the vicinity of the peeled release surface, thereby ensuring the in-plane uniformity of the substrate, and achieving cost reduction and high throughput. Therefore, the present invention has been made in view of the above problems, and the present invention provides a cleaning method for removing the particle source of the sandblasted surface when the glass treated surface subjected to the blasting treatment is washed. Foreign matter adhered to the particles after removal of the particles. [Means for Solving the Problems] In order to solve the above problems, the present invention provides a method for manufacturing an SOI wafer, which is a method for fabricating an SOI wafer, and has at least the following steps: injecting hydrogen ions or rare gas ions or both a step of preparing a bonded substrate by bonding a β-sand wafer having an ion-implanted layer or a sand wafer with an oxide film and a handle wafer; and peeling along the ion-implanted layer a step of transferring the wafer onto the processed wafer to form a stripped SOI wafer; immersing and etching the above-mentioned stripped SOI wafer of 5 Onm or more in an aqueous ammonia-hydrogen peroxide solution; CMP honing the ruthenium film layer of the SOI wafer immersed and stripped in the aforementioned ammonia-hydrogen peroxide aqueous solution, and honing 10-50 nm (the patent application scope item 1) is thus -9-201005883 with a ruthenium film peeled off by ion implantation and stripping. The SOI wafer after detachment is immersed in an aqueous ammonia-hydrogen peroxide solution to make the ruthenium film of the SOI wafer after peeling off by an alkaline solution such as KOH. Slow - aqueous hydrogen peroxide etching than 5 Onm. According to this, since the etching amount can be easily controlled, the in-plane can be uniformly etched, so that the in-plane film thickness uniformity after etching can be ensured, and the ion-implanted damaged layer can be removed. Subsequently, the contact polishing is performed by CMP honing, thereby ensuring the uniformity of the in-plane film thickness and performing the ion implantation damage layer removal, whereby the SOI crystal which is suppressed in the in-plane film thickness deviation is obtained in the past. circle. Moreover, since the step of immersing in the aqueous ammonia-hydrogen peroxide solution can be a batch process, the SOI wafer after the stripping can be processed in a large amount at a time, and the method for manufacturing the SOI wafer capable of achieving low cost and high throughput can be achieved. . Further, the ammonia-hydrogen peroxide aqueous solution is preferably used in a composition ratio by volume ratio, ammonia water (29 wt%) is 0.05 to 2, hydrogen peroxide aqueous solution (30 wt%) is set to 0·01 to 0.5, and water is set to 1. The latter (application for patent scope 2). According to this, the ammonia-hydrogen peroxide aqueous solution having the above composition can be more uniformly etched in the plane due to the competitive reaction of ΝΗ4ΟΗ and Η2〇2 in the cleavage. Further, in the step of preparing the bonded substrate, the processed wafer may be any material of ruthenium, sapphire, alumina, quartz, Sic, aluminum nitride or glass (Application No. 3). According to the present invention, even after the heat treatment such as annealing is not performed, the S0I wafer after the peeling of the in-plane film thickness is excellent, and therefore, for example, an insulating low-melting material can be used for the processing wafer. Therefore, by selecting the material of the wafer in accordance with the selection of the target 201005883, it is possible to obtain characteristics such as suppression of leakage current flow on the SOI substrate, and it is possible to reduce the power consumption or high precision of the device to be fabricated. The present invention provides a method for fabricating an SOI wafer, characterized in that it has at least the following steps: preparing a paste for bonding a wafer with an ion implantation layer and a process wafer by implanting hydrogen ions or rare gas ions or both. a step of bonding the substrate; performing a stripping along the ion implantation layer to transfer the twin crystal 9 onto the processed wafer to form a stripped SOI wafer; and dipping in an aqueous ammonia-hydrogen peroxide solution a step of removing the SOI wafer after the stripping; and a step of heat-treating the SOI after the stripping in the ammonia-hydrogen peroxide aqueous solution at a temperature of 900 ° C or higher (application patent item 4). In this manner, the SOI wafer having the tantalum film peeled off by the ion implantation stripping method is immersed in the ammonia-hydrogen peroxide aqueous solution, so that the amorphous film formed on the surface of the SOI wafer after peeling is high. In most cases, the high-damage layer of the ion implantation defect is etched by an ammonia/hydrogen peroxide aqueous solution having an etching rate slower than an alkaline solution such as KOH. According to this, since the etching amount can be easily controlled and the in-plane can be uniformly etched, the in-plane film thickness uniformity after etching can be further ensured. Then, since the SOI wafer after the peeling is subjected to annealing heat treatment in a state where the surface roughness is lowered, the SOI wafer can be manufactured by shortening the annealing temperature and annealing time during the heat treatment. Further, in the ammonia-hydrogen peroxide aqueous solution immersing step, it is preferred that the SOI wafer after the above-described peeling is etched by 20 nm or more (Application No. 5-11 - 201005883). According to this, by making the etching amount to 20 nm or more with ammonia-hydrogen peroxide, the highly damaged layer can be more surely etched. Further, in the ammonia-hydrogen peroxide aqueous solution, the composition ratio is a volume ratio, ammonia water (29 wt%) is 0.05 to 2, hydrogen peroxide aqueous solution (30 wt%) is 0.01 to 0.5, and water is 10. (Applicant's patent scope item 6). According to this, the aqueous ammonia-hydrogen peroxide solution having the above composition is etched by the competitive reaction of NH4OH Q with H2 〇 2, so that the surface can be more uniformly etched. Further, in the step of preparing the bonded substrate, the processed wafer is preferably any material of ruthenium, sapphire, alumina, quartz, Sic, aluminum nitride or glass (Application No. 7). According to the present invention, since the annealing heat treatment can be made lower temperature and shorter in time than the conventional one, the above-mentioned insulating or low melting point material can be used for the processing wafer. Therefore, depending on the purpose, the use of the germanium wafer as the @process wafer can be achieved because the characteristics of the leakage current can be suppressed on the SOI substrate, thereby reducing the power consumption of the post-production equipment. Or high precision is possible. In addition, the heat treatment step may be carried out in any of argon, nitrogen, helium or a mixed gas atmosphere (application patent item 8). Accordingly, heat treatment may be performed in an inert gas atmosphere, and heat treatment may be performed. In addition to the reduction in resistivity before and after, there is almost no high-quality SOI wafer with a -12-201005883 Grown-in defect near the surface. Further, the heat treatment step may be carried out in an oxygen atmosphere or in a mixed gas atmosphere of at least one of argon, nitrogen and helium (application no. 9). Accordingly, the heat treatment in the oxygen-containing atmosphere allows the excess oxygen in the surface to be diffused outward, thereby achieving higher quality by increasing the insulation resistance of the insulating oxide film layer of the S01 wafer. S 01 wafer. Further, the heat treatment step may be carried out in a hydrogen atmosphere or in a mixed gas atmosphere of at least one of argon, nitrogen and helium (application patent patent item 1). According to this, in the heat treatment in a hydrogen-containing atmosphere having a high transfer effect of germanium atoms, the uniformity of the in-plane film thickness is further improved and the surface roughness is lowered to obtain a high-quality SOI wafer. The present invention provides a method for cleaning a glass treated surface subjected to sandblasting, which is a method for washing a glass treated surface subjected to sandblasting, wherein the special β is characterized by at least washing the treated surface with HF, and then performing alkali Wash (Applicant's patent scope item 11). Accordingly, according to the cleaning method of the present invention, the glass-treated surface after the blasting treatment is first washed with HF, and the etching effect of the glass by the HF solution can be etched to remove the acute-angle portion, crack, and the surface of the glass-treated surface. Part of the particle source and other special parts such as the blasting treatment. Then, since the foreign matter which is freely reattached at the time of washing the HF can be removed by alkali washing, even if the blasting is applied, the glass having few particles can be obtained. Further, since the alkali matter is removed by alkali washing to remove the foreign matter, the foreign matter once removed in the alkali solution is not attached again - so that it can be effectively washed. At this time, the aforementioned glass may be quartz glass (No. 12 of the patent application). According to this, even if the insulating material of the present invention is particularly easy to adhere to, the free foreign matter at the time of HF washing after blasting can be removed and the re-adhesion can be prevented, and high-efficiency washing can be performed. Further, the aforementioned glass may be in the form of a wafer (item 13 of the patent application). In particular, a glass wafer having a problem that the particles are a problem can be a wafer having no particles by the cleaning method of the present invention. At this time, the wafer is laminated with a single crystal germanium layer (Patent No. 14 of the patent application). According to the cleaning method of the present invention, even if the wafer of the single crystal germanium layer is laminated on the glass wafer, the foreign matter free from the surface to be subjected to the sandblasting treatment is attached to the single crystal crucible even when the HF is washed. On the layer, the generation of particles of the single crystal germanium layer can be prevented since it can be subsequently removed by alkali cleaning. At this time, the HF cleaning can be carried out in a state where the single crystal germanium layer on the wafer is protected by a protective tape or an organic protective film (Patent No. 15 of the patent application). In this way, since the single crystal germanium layer is protected in the HF cleaning, the etching of the single crystal germanium layer by the HF solution can be reduced, and the foreign matter free from the sandblasting surface in the HF washing can be prevented from adhering to the single crystal germanium layer. Therefore, it can be a wafer having a single crystal germanium layer with less particles. Moreover, the alkali solution used in the alkali washing is preferably NH4OH, 201005883

Any one of NaOH, KOH, and CsOH or H2〇2 added to any of them (Patent No. 16 of the patent application). The alkali solution used in the alkali washing of the present invention may be appropriately selected from the above, and h202 may be added to increase the oxidizing power, and the removal of the foreign matter can be performed more efficiently. Further, the alkali solution used in the alkali washing is preferably such that when the concentration composition is H20, the NH4OH (in terms of 29% aqueous solution) is φ0·5~2, and H202 (converted to 30% aqueous solution) is 0.01- 0.5 SCI solution (Article 17 of the patent application scope). In the alkali washing of the present invention, the SCI solution having the same composition is used, and the foreign matter adhering to the glass can be removed more efficiently and the re-adhesion of the foreign matter can be prevented. Further, a moderate alkali etching effect can be maintained by making the concentration ratio of H202 lower than those of the usual SCI solution. Further, the alkali solution used in the alkali washing may be an alkali-based organic solvent (Application No. 18 of the patent application). • These alkali-based organic solvents can also be used in the cleaning method of the present invention. Further, in the HF washing, it is preferred to etch the glass surface treated with the blasting treatment by 20 nm or more (the ninth item of the patent application). When the glass-treated surface is etched by 20 nm or more, the sharp-angled portion, the crack, the damaged portion, and the like which are the source of the fine particles of the treated surface can be etched without causing dust generation in the subsequent steps. Further, the present invention provides a glass to which blasting is applied, which is characterized by being washed by the blasting method of the glass-treated surface of the present invention (Patent No. 20). -15- 201005883 Thus, if the blasted glass is washed by the cleaning method of the present invention, the particles generated by the blasting treatment can be effectively removed, and since the foreign matter can be prevented from reattaching during washing, Even if sandblasting is applied, it can be a good quality glass product with few particles. [Effect of the Invention] As described above, according to the method for producing an SOI wafer of the present invention, the uranium amount can be easily controlled, so that the in-plane can be uniformly etched, so that the in-plane film thickness uniformity after etching can be ensured. According to this, an SOI wafer in which the variation in the in-plane film thickness is suppressed can be obtained. Further, since the step of immersing in the aqueous ammonia-hydrogen peroxide solution can be a batch process, the SOI wafer after the stripping can be processed in a large amount at a time, and the method of manufacturing a SOI wafer having a low cost and a high throughput can be obtained. According to the method for fabricating an SOI wafer of the present invention, the etching rate can be easily controlled by immersing the stripped SOI wafer in an ammonia/hydrogen peroxide aqueous solution having a slower etching rate than the alkali solution, and since it can be uniformly etched In-plane, it ensures the uniformity of the surface after etching. Further, since the SOI wafer after peeling can be subjected to annealing heat treatment in a state where the surface roughness is lowered, the annealing temperature and annealing time of the heat treatment can be shortened and lowered. By this, it can be used as a method of manufacturing a SOI wafer that reduces metal contamination or wafer lift and achieves cost reduction. The problems associated with the glass-treated surface of the blasting treatment may be prevented by first removing the particles from the acute angle portion, the crack, and the damaged portion of the treated surface by HF washing and etching. By the subsequent alkaline washing, -16-201005883 can remove the particles which are not taken out during HF washing or the foreign matter which is freely adhered by etching, and further, since the foreign matter can be removed and reattached, it can be effectively carried out. Wash. According to the cleaning method of the present invention, it is particularly effective to remove particles of the glass which has been subjected to blasting which are likely to generate fine particles. [Embodiment] Hereinafter, the present invention will be more specifically described. • As described above, it is expected to develop an efficient method for producing an SOI wafer in which the ion implantation defect layer present in the ion implantation layer in the vicinity of the peeling surface is removed and the in-plane uniformity of the substrate can be ensured. Therefore, the inventors have actively reviewed the results and found that the uranium engraving can be easily controlled by the uranium engraving of the ammonia-hydrogen peroxide aqueous solution which is slower than the alkali solution, so that the ion implantation defect layer can be removed and uniform. In the etched surface, the in-plane film thickness uniformity after etching is ensured, and thus the present invention has been completed. Φ Hereinafter, a method of manufacturing the SOI wafer of the present invention will be described with reference to Fig. 1, but the present invention is not limited thereto. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a flow chart showing an example of the steps of a method for fabricating an SOI wafer of the present invention. (Step a: Preparing the bonded substrate) First, as shown in FIG. 1(a), the germanium wafer 11 and the processed wafer 12 on which the ion implantation layer 14 is formed by implanting hydrogen ions or rare gas ions or both are attached. The substrate 15 is prepared and bonded. -17- 201005883 In the prepared bonding substrate 15, an oxide film 13 may be provided between the germanium wafer 11 and the processed wafer 12. FIG. 1 is a description of the case where the oxide film 13 is disposed, but the oxide film 13 is not necessary. The prepared bonding substrate may be formed by directly bonding the germanium wafer to the processing wafer. Among them, when preparing a bonded substrate, a material composed of any of ruthenium, sapphire, alumina, quartz, SiC, aluminum nitride, or glass may be used as the handle wafer. In the present invention, since the SOI wafer after the detachment is immersed in an aqueous ammonia-hydrogen peroxide solution and etched as described later, the SOI wafer after peeling which is excellent in the uniformity of the in-plane film thickness can be obtained without performing heat treatment such as annealing. . Thus, an SOI wafer excellent in in-plane uniformity can be obtained without performing heat treatment, and accordingly, the substrate is not limited to germanium, and a different substance such as quartz or glass or a material having a low melting point can be used. Further, since the above-mentioned insulating material can be used for the processing of the wafer, and the leakage current on the SOI substrate can be suppressed, the high precision of the subsequent fabrication equipment and low power consumption can be made possible. (Step b: Peeling) Next, as shown in FIG. 1(b), the ion implantation layer 14 is peeled off to thin the tantalum wafer 11 in the bonded substrate 15'. The tantalum film 16 is transferred to the treated crystal. Round 12 on. Accordingly, the peeled SOI wafer 17 is obtained (step c: immersion in an ammonia-hydrogen peroxide aqueous solution). Next, as shown in FIG. 1(c), the etched S ΟI crystal 201005883 circle 17 is immersed in The ruthenium film 16 is etched in an aqueous ammonia-hydrogen peroxide solution. Among them, the etching amount of the germanium film in this step is 50 nm or more. Since the ammonia-hydrogen peroxide aqueous solution has a slower etching rate than an inert solution such as KOH, the amount of etching is easily controlled, and it is easy to ensure uniformity of film thickness. When the etching amount of the tantalum film is 5 Onm or more by the aqueous ammonia-hydrogen peroxide solution, a large amount of damaged layer due to ion implantation peeling can be etched away. 0, wherein the ammonia-hydrogen peroxide aqueous solution of the SOI wafer after the immersion and stripping can be used in a composition ratio, and ammonia water (29 wt%/e) is set to 0.05 to 2, and an aqueous hydrogen peroxide solution (30 wt%) is set. 0.01 to 0_5, water is set to 10. According to this, the ammonia-hydrogen peroxide aqueous solution having the above composition causes uranium engraving due to the competitive reaction of NH4OH and H202 on ruthenium, whereby the in-plane can be more uniformly etched, and thus it is obtained. The SOI wafer is more excellent in film thickness uniformity. In this step, the etching speed of the germanium film can be adjusted by changing the composition of #nh4oh and h2o2. In order to increase the amount of processing, it is necessary to obtain a certain etching rate. Therefore, when H20 is 10, it is preferable to make nh4oh 0.05 or more (29 wt%) and H202 to 0.5 or less (30 wt%). Of course, the lower limit of NH4OH and the upper limit of H202 are not limited to the above range. By immersing the peeled SOI wafer in the ammonia-hydrogen peroxide aqueous solution having the composition ratio, the amount of treatment can be further improved, and the manufacturing cost can be further lowered. -19- 201005883 (Step d: CMP honing) Subsequently, as shown in Fig. 1(d), the ruthenium film of the SOI wafer 17 after detachment after immersion in an aqueous ammonia-hydrogen peroxide solution is subjected to CMP honing, borrowing This makes it possible to obtain the SOI wafer 10. Among them, in this step, the amount of honing is made 10 to 5 Onm. In other words, since only a small amount of honing is obtained, the in-plane uniformity of the film thickness is not deteriorated, and the surface roughness can be washed, and the flatness can be improved. Thus, in the method of fabricating the SOI wafer of the present invention, the stripped @SOI wafer is immersed in an aqueous ammonia-hydrogen peroxide solution to perform ion implantation into the damaged layer. The reason for using the ammonia-hydrogen peroxide aqueous solution is as follows. For example, a simple alkali solution typified by KOH or the like usually causes etching too fast (>100nrn/min), and it is very difficult to control the etching rate by lowering the concentration or lowering the temperature, etc., and it is difficult to make the in-plane etching rate uniform. . However, the uranium enrichment with ammonia-hydrogen peroxide solution causes a uniform reaction between ammonia and hydrogen peroxide, so that the in-plane can be uniformly etched, and since the etching rate is also moderately slower than the soda ash solution, the etching can be easily controlled. the amount. According to this, the etching amount can be easily controlled, and since the in-plane can be uniformly etched, the in-plane film thickness uniformity after etching can be ensured. Subsequently, since a small amount of material is taken out by CMP honing to perform contact polishing, the uniformity of the in-plane film thickness can be ensured and the ion-implanted damaged layer can be removed. Accordingly, an SOI wafer in which the variation in the in-plane film thickness can be controlled can be obtained as compared with the prior art. Moreover, since the step of immersing in the aqueous ammonia-hydrogen peroxide solution can be a batch type -20-201005883 process, the SOI wafer after the stripping can be processed in a large amount at a time, and the SOI crystal which can achieve low cost and high throughput can be obtained. The manufacturing method of the circle. Hereinafter, a method of manufacturing the SOI wafer of the present invention will be described with reference to Fig. 4, but the present invention is not limited thereto. Fig. 4 is a flow chart showing an example of the steps of the SOI wafer manufacturing method of the present invention. • (Step a: Preparing the bonded substrate) First, as shown in FIG. 4(a), the germanium wafer 11 and the processed wafer 1 in which the ion implantation layer 14 is formed by implanting hydrogen ions or rare gas ions or both are formed. 2 bonding, preparing to laminate the substrate 15 . Among them, the prepared bonding substrate 15 is provided with an oxide film 13 between the silicon wafer 11 and the processing wafer 12. Further, when preparing a bonded substrate, a material composed of ruthenium, sapphire, alumina, quartz, SiC, aluminum nitride, or glass may be used as the process # wafer. According to the present invention, since the SOI wafer after peeling is immersed in an ammonia-hydrogen peroxide aqueous solution and etched as described later, the in-plane film thickness uniformity after etching can be ensured, and the surface roughness can be reduced. Annealing heat treatment. Then, the subsequent heat treatment step is lower in temperature and time-saving than in the past. Accordingly, the substrate is not limited to germanium, and a different substance such as quartz or glass or a material having a low melting point can also be used. In addition, since the above-mentioned insulating material can be used for the processing of the wafer, and the use of the germanium wafer as the processing wafer is used, since the leakage current on the SOI substrate can be suppressed, the post-production apparatus is made - 21 - 201005883 High precision and low power consumption are possible. (Step b: Peeling) Next, as shown in FIG. 4(b), the ion implantation layer 14 is peeled off, and the tantalum wafer 11 in the bonded substrate 15 is thinned, and the tantalum film 16 is transferred to the treated crystal. Round 12 on. Accordingly, the stripped SOI wafer 17 is obtained. The tantalum film 16 of the stripped SOI wafer 17 obtained in this step is formed by ion implantation from the surface side by the following three layers: having a majority of ions The high-damage layer 16a having a high degree of amorphousness injecting defects, the low-damage layer 16b in which ion implantation damage is not as high as the aforementioned high-damage layer 16a and the degree of amorphousness is not so high, and damage is prevented by ion implantation. The single crystal has no damaged layer 16c. (Step c: immersion in an aqueous ammonia-hydrogen peroxide solution) Next, as shown in FIG. 4(c), the etched ruthenium film is etched by immersing the peeled SOI wafer 17 in an aqueous ammonia-hydrogen peroxide solution. 16 high damaged layer 16a. The etching of the SOI wafer after stripping may be 20 nm or more. As described above, by making the etching amount of the aqueous ammonia-hydrogen peroxide solution 20 nm or more, the highly damaged layer can be more reliably etched. Further, the ammonia-hydrogen peroxide aqueous solution of the SOI wafer after the immersion peeling can be used in a volume ratio, and the ammonia water (29% by weight) is set to 〇.5~2, and an aqueous hydrogen peroxide solution (30% by weight) is used. It is 0 · 0 1~0 · 5, and the water is set to 1 0. According to this, the ammonia-hydrogen peroxide aqueous solution having the above composition is etched by the competitive reaction of NH4OH and H202, so that the surface can be more uniformly etched. (Step d: Heat Treatment) Subsequently, as shown in Fig. 4(d), the SOI wafer 17 after the immersion in the ammonia-hydrogen peroxide aqueous solution is thermally dried, thereby obtaining the surface φ plane flattening. The SOI wafer 10 is. Here, the heat treatment step can be carried out in any of argon, nitrogen, helium or a mixed gas atmosphere. As described above, heat treatment is carried out in an atmosphere of an inert gas, and in addition to a small change in resistivity before and after the heat treatment, a local quality SOI wafer having almost no growth defects in the vicinity of the surface layer can be obtained. Further, the heat treatment step may be carried out in an atmosphere of oxygen or a mixed atmosphere of at least one of argon, nitrogen and chlorine. • Thus, heat treatment in an oxygen-containing atmosphere allows the excess oxygen in the surface to be diffused outward, thereby increasing the insulation resistance of the insulating oxide film layer of the SOI wafer, thereby obtaining a high-quality SOI wafer. Further, the heat treatment step may be carried out in a hydrogen atmosphere or a mixed atmosphere of at least one of argon, nitrogen and helium and hydrogen. As described above, in the heat treatment in a hydrogen-containing atmosphere having a high migration effect of germanium atoms, an SOI wafer having excellent in-plane film thickness uniformity and having reduced growth defects and surface roughness can be obtained. Thus, the SOI wafer manufacturing method of the present invention is etched by immersing the SOI wafer of -23-201005883 after stripping in an aqueous ammonia-hydrogen peroxide solution, followed by heat treatment. The reason for using the ammonia-hydrogen peroxide aqueous solution is as follows. The tantalum film of the SOI wafer just after stripping is usually high in the vicinity of the surface, and the closer to the single crystal quality, the farther it is. Among them, the ammonia/hydrogen peroxide solution will preferentially uranize the part with a high degree of stereotype. Specifically, the protruding portion having a large surface roughness is etched earlier. Further, a simple alkali solution typified by KOH or the like is usually etched too fast (> l〇〇nm/min), and it is extremely difficult to control the etching rate to lower the concentration or lower the temperature, and it is difficult to make the in-plane The etching speed is uniform. However, etching with an aqueous ammonia-hydrogen peroxide solution can uniformly etch the in-plane due to the competitive reaction between ammonia and hydrogen peroxide, and since the etching rate is also moderately slower than that of the soda ash solution, the etching amount can be simply controlled. . According to this, the amount of etching can be easily controlled, and since the in-plane can be uniformly etched, the in-plane film thickness uniformity after etching can be ensured. Then, since the SOI wafer after the peeling is subjected to the annealing heat treatment in the state where the surface roughness is lowered, the annealing temperature and the annealing time during the heat treatment can be shortened and the temperature can be lowered. Further, it is possible to reduce metal contamination or wafer warpage, and to manufacture a low-cost SOI wafer. That is, the heat treatment for recovering the damaged layer in the past needs to be above 1150 °C, but the present invention can be recovered above 900 °C. Hereinafter, the cleaning method of the present invention will be described in detail with reference to Fig. 10 as an example of the embodiment, but the present invention is not limited thereto. Fig. 10 is a flow chart showing an example of the embodiment of the blasting process from the glass to the cleaning of the present invention -24-201005883. As shown in Figure 1, the glass is first sandblasted. The method of the blasting treatment is not particularly limited. For example, the same apparatus as in the past can be used, and particles such as alumina or quartz are rubbed against the treated surface to make it rough. The glass to which the cleaning method of the present invention can be used may be a SiO 2 substrate or the like, but may be, for example, quartz glass. As described above, even if the cleaning method which is easy to be charged uses the cleaning method of the present invention, it is possible to prevent re-adhesion of fine particles during washing after the blasting treatment, and it is possible to perform good washing. Further, the glass may be a wafer or may be, for example, a quartz boat used for heat treatment of a semiconductor wafer. Moreover, the present invention is also applicable to a wafer in which a single crystal germanium layer is laminated. In the case of laminating the single crystal ruthenium layers, the cleaning method according to the present invention can also remove the foreign matter which is free from the self-treated surface and adheres to the single crystal ruthenium layer when washed by alkali, by alkali washing, and The reduction of the particles can be effectively carried out because it prevents re-adhesion. Further, since hydrazine is washed after HF washing, the removal of fine particles can be achieved even if HF washing is not performed for a long period of time, and adhesion of foreign matter to the single crystal ruthenium layer during HF washing can be reduced. For example, particles such as SOQ (矽 on quartz) or SOG (on glass) are particularly problematic. The cleaning method using the present invention can also be a wafer having almost no particles. Next, as shown in Fig. 10, the glass treated surface subjected to the blasting treatment was washed with HF. The hydrofluoric acid used at this time may be any one containing a fluorine-containing acid. For example, a hydrofluoric acid solution, a buffered hydrofluoric acid aqueous solution or the like can be used. Further, the washing method is not particularly limited, and the sandblasted glass can be subjected to spin cleaning by, for example, dipping, and also -25-201005883. In this manner, first, the treated surface of the glass subjected to the blasting treatment is washed with HF, and the uneven portion such as cracks formed by the blasting to be the source of the fine particles can be removed by etching. In this case, it is preferred to etch and etch the glass-treated surface of 20 nm or more by HF, whereby the removal of the particulate source without the degree of dust generation in the subsequent step can be performed. Further, when the glass to be cleaned by the cleaning method of the present invention is a wafer in which a single crystal yttrium is laminated, it is preferred to wash the HF in a state in which the single crystal 矽 @ layer is protected by a protective tape or an organic protective film. This protection can be formed prior to HF washing or prior to prior sandblasting. If the blasting treatment is performed, the generation of particles of the single crystal ruthenium layer can be more effectively prevented. The organic protective film may be formed, for example, as an organic film such as a photoresist film, and may be a protective tape attached to the organic film, or may be a protective tape directly attached to the single crystal layer. The protective film thus formed is less likely to adhere to foreign matter and can be removed before the alkali washing, and the fine particles of the single crystal layer can be removed by alkali washing, and the protective film can be removed after the alkali is washed. Next, alkali washing was performed as shown in FIG. In this way, the alkali washing after HF washing can remove the foreign matter which is engraved and freed and reattached by uranium washing during HF washing, and can be removed by alkali washing, and can prevent foreign matter from being re-used in the alkali solution. Attachment can remove particles efficiently. The alkali solution used at this time can use NH4OH, NaOH, KOH,

Any of CsOH, or H202 added to any of these, or -26-201005883 EDP (ethylenediamine-pyrocaterol-water), TMAH (tetramethylammonium hydroxide), hydrazine, etc. It is an organic solvent. Further, when the concentration composition is preferably set to 10, the NH4OH (in terms of a 29% aqueous solution) is 0.5 to 2, H2〇2 (in terms of a 30% aqueous solution), and the SCI solution of 〇.〇1 to 0.5 is used as the SCI solution. Alkaline solution. If the SCI solution is composed of this concentration, the cleaning effect is improved due to the oxidizing power of H202, and since the H202 concentration ratio is lower than that of the general SCI solution, the alkalinity is maintained, so that the etching effect can be maintained and the cleaning can be prevented. The foreign matter is attached again. Thus, according to the cleaning effect of the present invention, first, the particulate source such as the damaged portion which is unique to the glass treated surface which has been subjected to the blasting treatment by HF can be removed, and then the alkali is washed, thereby effectively preventing and removing The foreign matter that is freed and reattached during HF washing can be effectively washed. For those who need to be atomized by sandblasting, such as glass, by washing by the cleaning method of the present invention, it is possible to produce a glass product which has an atomization treatment effect and has few fine particles. [Examples] Hereinafter, the method for producing an SOI wafer of the present invention and the glass cleaning method will be more specifically described by way of Examples and Comparative Examples, but the present invention is not limited thereto. (Examples 1 - 5, Comparative Examples 1 - 4)

First, a SOI -27-201005883 wafer (having a film thickness of about 310 nm) after peeling off the film by a hydrogen ion implantation method is prepared. Subsequently, the prepared stripped SOI wafer was immersed in an ammonia-hydrogen peroxide aqueous solution, and etching was performed on 3 Onm (Comparative Example 1), 40 nm (Comparative Example 2), 50 nm (Example i), and 70 nm (Example 2). 85 nm (Examples 3-5, Comparative Examples 3 and 4). At this time, the composition of ammonia-hydrogen peroxide was set to NH40H:H202:H20 = 1:0.02:1 0, and the temperature was set to 80 °C. At this time, the etching speed of the film was weak to 3 nm/min. Subsequently, CMP honing was performed to fabricate an SOI wafer. _ wherein the 矽 film honing amount in the CMP honing step is set to 10 〇 nm (Example 3), 25 nm (Example 4), 50 nm (Example 5), 60 nm (Comparative Example 3), 7 0 nm (Comparative Example 4). Further, the CMP honing step was not performed on the SOI wafer after the stripping of Comparative Examples 1 and 2. After the production process and production of the SOI wafer, the evaluation shown below is performed.

After the steps of immersing the SOI wafer in the ammonia-hydrogen peroxide aqueous solution after the stripping of Examples 1-5 and Comparative Example 1-4, the wafer surface was examined by the film thickness measuring device, and the ruthenium film was evaluated. Film thickness and in-plane film thickness deviation. The film thickness gauge has a scan range of 10 x 10 μm and an average of 361 points in the plane of the wafer. Further, the variation in the in-plane thickness is defined by "maximum film thickness and minimum film thickness". In the SOI wafers of Examples 3-5 and Comparative Examples 3 and 4, the surface of the wafer was observed by a film thickness measuring device before the CMP honing step, and the film thickness and the in-plane film thickness deviation of the ruthenium film were evaluated. The 361 points in the wafer plane were measured, and the difference between the maximum 値 and the minimum 作为 was used as the deviation. -28-201005883 In addition, in Table 1, the in-plane film thickness of the ruthenium film before and after the steps of evaluating the peeled SOI wafer of Example 1-3, Comparative Examples 1, and 2 and the step of immersing in an aqueous ammonia-hydrogen peroxide solution are shown. The relationship between the deviation of the in-plane thickness during the deviation with respect to the amount of etching. Further, in Table 2, the relationship between the amount of deviation and the amount of honing in the film thickness deviation of the ruthenium film before and after the CMP honing step of the SOI wafers of Examples 3-5 and Comparative Examples 3 and 4 was evaluated. Fig. 2 is a graph showing a comparison of the film thickness variation of the ruthenium film of the SOI wafer after peeling before and after the ammonia-hydrogen peroxide aqueous solution immersion step in Example 4. Further, Fig. 3 is a graph showing a comparison of the amount of change in the in-plane film thickness of the tantalum film of the SOI wafer before and after the immersion step in the fourth embodiment and before and after the CMP honing step. [Table 1] Hungry amount [nm] In-plane film thickness deviation [nm] Pre-impregnation immersion Comparative Example 1 30 4.0 5.8 Comparative Example 2 40 4.1 6.0 Example 1 50 4.0 5.1 Example 2 70 4.0 5.2 Example 3 85 4.1 5.3 The in-plane film thickness deviation of the tantalum film of the SOI wafer after immersion in the ammonia-hydrogen peroxide aqueous solution is as shown in Table 1, which is 4.0 nm to 5.1 nm in Example 1, respectively. Example 2 was 4.0 nm to 5.2 nm, -29-201005883 was 4.1 nm to 5.3 nm in Example 3, 4.0 nm to 5.8 nm in Comparative Example 1, and 4.1 nm to 6.0 nm in Comparative Example 2. Thus, the in-plane variation of the tantalum film of the SOI wafer after peeling can be sufficiently controlled by the etching amount of the aqueous ammonia/hydrogen peroxide solution of 5 Onm or more [Table 2] honing [nm] in-plane film thickness deviation [nm] Example 3 after honing honing Example 3 10 5.3 5.5 Example 4 25 5.2 6.5 Example 5 50 5.1 7.2 Comparative Example 3 60 5.3 10.2 Comparative Example 4 70 5.1 11.6

The film thickness deviation of the tantalum film of the SOI wafer after peeling before and after the CMP honing step is as shown in Table 2, which is 5.3 nm to 5.5 nm in Example 3 and 5.2 nm to 6-5 nm in Example 4, respectively. Example 5 was @5.1 nm to 7.2 nm, 5.3 nm to 10.2 nm in Comparative Example 3, and 5.1 nm to 11.6 nm in Comparative Example 4. According to this, it is understood that the ruthenium film of the stripped SOI wafer of 5 Onm or more is etched by an ammonia-hydrogen peroxide aqueous solution by CMP honing to have a film thickness uniformity of 10 nm or less. SOI wafers. Moreover, it is impossible to achieve a honing amount of 1 〇 nm or less by CMP honing. In Example 4, after evaluating the film thickness of the tantalum film before and after etching with an aqueous ammonia-hydrogen peroxide solution, as shown in Fig. 2, it was understood that the deviation between the SOI wafers after the peeling was -30-201005883. Thereby, it can be judged that the etching by ammonia-hydrogen peroxide is stabilized. Further, the change in film thickness deviation of the tantalum film before and after the immersion step and before and after the honing step is shown in Fig. 3. After the peeling of the SOI wafer of Example 4 was 85 nm with an aqueous ammonia-hydrogen peroxide solution, the in-plane film thickness of the tantalum film was also about 2 nm and did not increase. This flaw is quite small compared to the amount of the touch, which is a practical flaw. Further, the deviation of the in-plane film thickness of the tantalum film after φ and CMP honing is similarly shown in Fig. 3. It can be seen that the film thickness deviation after CMP honing is concentrated to a maximum of about 7 nm. This enthalpy is also relatively small compared to the amount of honing, and it is known that an SOI wafer having excellent in-plane film thickness uniformity can be obtained. Thus, the peeled SOI wafer which was peeled off by the ion implantation lift-off method was immersed in an ammonia-hydrogen peroxide aqueous solution to etch 50 nm or more, and then honed by a CMP honing at 10 to 50 nm. According to this, an SOI wafer in which the variation in the in-plane film thickness is suppressed can be obtained as compared with the SOI wafer thinned by the conventional method (Examples 6, 7 'Comparative Examples 5 and 6). 20 sheets are prepared by ion implantation. The SOI wafer after peeling of the printed film (the film thickness of the germanium film was about 300 nm) was divided into 60 pieces of the comparative example 50 pieces. Subsequently, the peeled SOI wafer of the one-sheet embodiment was immersed in an aqueous ammonia-hydrogen peroxide solution and etched for about 50 nm, at which time the composition of the aqueous ammonia-hydrogen peroxide solution was set to NH4OH:H202:H20 = 1: The 0.2:10' temperature is set to -31 - 201005883 80 °C. The concentration of NH4OH and H2〇2 is converted into a 30% aqueous solution and converted into a 30% aqueous solution. Further, the etching rate at this time was weak to 3 nm/min. On the other hand, the SOI wafer after peeling of the comparative example was immersed in an ammonia-hydrogen peroxide aqueous solution at 10 sheets. Next, the SOI wafers after peeling of the examples and the comparative examples were subjected to heat treatment (the example 6 and the comparative example 5) in a temperature range of 900 ° C to 1200 ° C (the treatment time was fixed to 1 hour). The atmosphere gas is a mixed gas of 10% hydrogen and 90% ammonia. Further, in the above atmosphere, the treatment temperature was fixed at 950 ° C, and the heat treatment time was changed (Example 7 and Comparative Example 6). Subsequently, the evaluation was performed as follows. The AF inspection of the SOI wafer before the heat treatment step of the example was carried out in the range of 10×10 μm, and the results are shown in Fig. 5(a). The SOI wafer observation image before the heat treatment step of the comparative example is shown in Fig. 5(b). Fig. 5 is a view showing an image of the SOI wafer observed by the AFM surface after peeling before the heat treatment step in the examples and the comparative examples. The surface roughness of the tantalum film surface of the SOI wafer after the stripping of the comparative example was expressed by RMS at 8.4 nm and represented by P-V 7 at 74.1 nm. When the AFM image was observed, numerous projections were observed. The surface roughness of the SOI wafer after peeling in the example was 3.3 nm in terms of RMS and 34.5 nm in P-V. It was found that the surface roughness was greatly reduced by etching with an aqueous ammonia-hydrogen peroxide solution as compared with the comparative example. The variation of the film thickness of the tantalum film (the average of 361 points in the plane of the 200 mm wafer 201005883) of the SOI wafer before and after etching is shown in Fig. 6. Fig. 6 is a view showing a comparison of film thickness changes of the ruthenium film of the SOI wafer after peeling before the heat treatment step in the examples and the comparative examples. It can be seen that after the peeling before the heat treatment step of both the examples and the comparative examples, the film thickness of the S 01 wafer was less than the variation between the samples. Further, the change in the in-plane film thickness deviation before and after the etching (the average of 361 points in the plane of the 200 mm wafer) is shown in Fig. 7. Fig. 7 is a graph comparing the in-plane film thickness deviation of the tantalum film of the SOI wafer after the inter-wafer embodiment φ and the peeling process before the heat treatment step in the comparative example. The surface deviation of the SOI wafer after the peeling of the embodiment is increased by about 1 nm compared with the wafer of the comparative example which is not etched, but if the enthalpy is compared with the etching amount (50 nm), it is rather small. It can be said that the in-plane thickness uniformity is sufficiently ensured. It is understood that the in-plane film thickness uniformity of the SOI layer is not deteriorated by the etching method of the embodiment. The relationship between the surface roughness of the SOI wafer and the processing temperature after heat treatment to change the processing temperature is shown in Fig. 8. Fig. 8 is a graph showing the relationship between the surface roughness of the SOI wafer and the heat treatment temperature after heat treatment of the SOI wafer in the examples and the comparative examples. Compared with the effect of the heat treatment at 1150 °C in the SOI wafer of the comparative example, it is understood that the SOI wafer of the embodiment can exhibit an effect from 900 °c. It is shown that it is necessary to remove the large protrusion-like irregularities at a higher temperature, but the SOI wafer of the embodiment is etched by an aqueous ammonia-hydrogen peroxide solution, and the removal of the large protrusions can be performed on the low temperature side of the heat treatment.

The result is shown in Fig. 9. Fig. 9 is a graph showing the relationship between the surface roughness of the SOI wafer and the heat treatment time after heat treatment of the SOI-33-201005883 wafer in the examples and the comparative examples. The wafers of both of Example 7 and Comparative Example 6 reduced the surface roughness with time, but it was found that the wafer of Example 7 subjected to the etching treatment concentrated on the roughness of about 4 hours to about 0.2 nm in terms of RMS. On the other hand, it can be seen that the wafer of Comparative Example 6 which was not subjected to etching treatment lowered the roughness with time, but the degree was significantly slower than that of Example 7. Hereinafter, the present invention will be specifically described by way of Examples and Comparative Examples, but the present invention is not limited thereto. (Example 8 and Comparative Example 7-9) First, eight quartz wafers were subjected to sand blasting. Next, the treatment was carried out two times at a time under the following conditions. Example 8: Immersion in a 2% HF solution for 30 minutes, followed by immersion in a hydrazine solution (NH4OH: H202: H20 = 1: 〇. 2: 10) for 10 minutes. Comparative Example 7: No washing was performed Comparative Example 8: immersed in a 2% HF solution for 30 minutes. Comparative Example 9: Immersion in an alkali solution (NH40H: H202: H20 = 1 : 0.2: 10) for 1 minute. Next, as shown in FIG. 11, two sheets of the same conditions as those for processing the quartz wafer 11 under the above conditions, and two sheets of the evaluation wafer 13 which have not been subjected to sandblasting are used to form the sandblasted surface 12 and twins. The particle evaluation surface 15 of the circle 13 is placed in the cleaning crucible 14 in a total of four wafers. At this time, the interval between the quartz wafer 11 and the germanium wafer 13 is 5 mm. The number of particles (0.2 μm or more) of the evaluation surface 15 of the twin crystal 13 after the general RCA cleaning in this state was measured by a micro 201005883 particle counter. The number of foreign matter adhering to the quartz wafer 11 was evaluated from the measured number of particles. The measurement results are shown in Fig. 12. As shown in Fig. 12, the wafer which was subjected to alkali washing after HF washing in Example 8 was found to have few fine particles as compared with Comparative Example 7-9. Further, in Comparative Example 8, when only HF washing was performed, the number of particles larger than the crystal # circle of Comparative Example 7 which was not washed was measured. In Comparative Example 9, when only alkali washing was carried out, the number of fine particles was small compared with Comparative Examples 7 and 8, but the particulate source could not be removed. (Example 9 - 1 3) First, six quartz wafers were subjected to sand blasting. Next, the treatment was carried out two times at a time under the following conditions. Example 9: immersion in a 2% HF solution for 30 minutes' followed by immersion in a ΜΗ4 ΟΗ solution (3 vol%) for 10 minutes. Φ Example 10: immersion in 0.2% HF solution for 30 minutes' Subsequently immersed in an alkali solution (NH4OH: H2O2: H2O = 1: 1: 10) for 10 minutes. Example 11: immersion in a 2% HF solution for 30 minutes' followed by immersion in an alkali solution (ΝΗ4ΟΗ:Η2〇2:Η2Ο = 1:0·2:10) for 1 minute. Example 12: immersion in a 2% HF solution for 30 minutes' followed by immersion in an alkali-based organic solvent (8% hydrazine solution) for a minute. Example 13: immersion in a 2% HF solution for 30 minutes' followed by immersion in an alkali solution (ΚΟΗ solution) for 10 minutes. Next, as shown in FIG. 11, two sheets of the same conditions as those of the stone-35-201005883-inch wafer 11 processed under the above-described conditions, and two sheets of the wafer 34 for evaluation without blasting are used to make the blasting. The processing surface 12 and the fine particle evaluation surface 15 are disposed in the cleaning crucible 14 in a total of four wafers. At this time, the interval between the quartz wafer 1 1 and the germanium wafer 13 is set to 5 mm. The number of fine particles (0.2 μm or more) of the evaluation surface 15 of the wafer 1 3 after the general RC A cleaning was performed in this state was measured by a particle counter. The number of particles measured on the quartz wafer U was evaluated by the number of particles measured. The measurement results of Comparative Example 8 in which only HF washing was performed under the same conditions, and the results of the measurement in Example 9-1 3 are shown in Fig. 13. As shown in Fig. 13, the number of measurements of Comparative Example 8 in which HF washing was performed under the same conditions, and the number of particles of Example 9-13 which were subsequently subjected to alkali washing was remarkably reduced, and it was found that the number of particles measured by the alkali washing was significantly reduced. The number of particles can be significantly reduced. Further, the number of particles washed in the base of Example 1 was the smallest. This is because the oxidizing power of η2ο2 in the alkali solution of Example 11 is multiplied by ΝΗ4ΟΗ, since the concentration of Η202 is lower than that of the hydrazine solution of Example 10.

However, the etching effect of the crucible is not weakened, and it can be seen that the fine particles G can be removed more efficiently. As described above, the cleaning method of the present invention which performs alkali washing after HF washing is etched and removed by HF washing. The irregularities of the particulate source unique to the glass-treated surface of the sandblasting treatment are applied, and the foreign matter which is freed and adhered at this time is washed with the alkali to prevent re-adhesion and removal, so that the reduction of the particles can be efficiently performed. Further, the present invention is not limited to the above embodiment. The above-described embodiments are merely illustrative, and those having substantially the same configuration as those of the technical idea-36-201005883 described in the patent application scope of the present invention and having the same effects are included in the technical scope of the present invention. . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing an example of the steps of a method of manufacturing an SOI wafer of the present invention. 2 is a graph showing a comparison of the film thickness variation of the tantalum film of the SOI wafer after the stripping of the ammonia-hydrogen peroxide aqueous solution in the fourth embodiment, and FIG. 3 is a view showing the impregnation step in Example 4. A comparison chart of the amount of change in the in-plane film thickness of the tantalum film after peeling of the SOI wafer before and after the CMP honing step. 4 is a flow chart showing the process of the SOI wafer of the present invention. Fig. 5 is a view showing the surface observation image of the SOI wafer by the AFM after peeling before the heat treatment step of the examples and the comparative examples.

® Figure 6 is a graph comparing the film thickness variations of the SOI wafer after stripping before the heat treatment step of the examples and comparative examples. Fig. 7 is a graph showing the in-plane film thickness deviation of the tantalum film of the SOI wafer after peeling before the heat treatment step of the examples and the comparative examples. Fig. 8 is a graph showing the relationship between the surface roughness of the SOI wafer and the heat treatment temperature after heat treatment of the SOI wafers of Example 6 and Comparative Example 5. Fig. 9 is a graph showing the relationship between the surface roughness and the heat treatment time of the SOI wafer after heat treatment of the SOI wafers of Example 7 and Comparative Example 6. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a view showing the crystallized surface of the glass treated surface of the present invention, which is subjected to a sandblasting treatment, in the form of a crystal. The attached version of the price evaluation method is a series of step-by-step diagrams. When the net wash is 11 11 , the map is to be cleaned and placed in the shape of the crystal.

The fruit is determined to be rfu rtu. The grain is slightly 2 3 11 IX. [Main component symbol description] 1 0 : S 01 wafer 1 1 : chopped wafer 1 1 a : quartz wafer 1 2 : Processing wafer 1 2 a : Sandblasting surface 1 3 : Oxide film 1 3 a : Sand wafer 1 4 : Ion implantation layer 14a : Washing 匣 1 5 : Bonding substrate 1 5a : Particle evaluation surface 16 : 矽 film 1 6a: Highly damaged layer 1 6b: Low damaged layer 1 6 c : No damaged layer 17 : SOI wafer after peeling

Claims (1)

201005883 VII. Patent Application Scope - 1. A method for manufacturing an SOI wafer, characterized in that it has at least the following steps: a silicon wafer or an attached film having an ion implantation layer formed by implanting hydrogen ions or rare gas ions or both a step of bonding a wafer with an oxide film and a handle wafer to prepare a bonded substrate; and transferring the germanium wafer to the processed wafer under peeling along the ion implantation layer And the step of preparing the stripped SOI wafer by immersing the stripped SOI wafer in an ammonia-hydrogen peroxide aqueous solution, thereby etching a step of 50 nm or more; and by using the ammonia-hydrogen peroxide aqueous solution described above The ruthenium film layer of the immersed and stripped SOI wafer is subjected to CMP honing, and the step of honing 10-50 nm. 2. In the method of manufacturing an SOI wafer according to claim 1, wherein the ammonia-hydrogen peroxide aqueous solution is used in a composition ratio, and the ammonia water (29 wt%) is set to 〇·〇5~2. The aqueous hydrogen peroxide solution (30% by weight) was set to 0.01 to 0.5, and the water was set to 10. 3. The method for manufacturing an SOI wafer according to claim 1 or 2, wherein in the step of preparing the bonded substrate, the processed wafer is germanium, sapphire, oxidized, quartz, SiC, aluminum nitride, glass The responsibility of the medium - materials. 4. A method of fabricating an SOI wafer, characterized by having at least the following steps: -39-201005883 bonding a wafer having an ion implantation layer and implanting a hydrogen ion or a rare gas ion or both to a processing wafer a step of preparing a bonded substrate to transfer the tantalum wafer onto the processed wafer under peeling along the ion implantation layer, and preparing the stripped SOI wafer in an ammonia-hydrogen peroxide aqueous solution Immersing the stripped SOI wafer And a step of subjecting the stripped SOI wafer immersed in the aqueous ammonia-hydrogen peroxide solution to a heat treatment at a temperature of 900 ° C or higher. 5. The method of producing an SOI wafer according to claim 4, wherein in the step of immersing in the aqueous ammonia-hydrogen peroxide solution, the SOI wafer after the stripping is etched by 20 nm or more. 6. The method for producing an SOI wafer according to claim 4 or 5, wherein the ammonia-hydrogen peroxide aqueous solution is used in a composition ratio by volume ratio, and ammonia water (29 wt%) is set to 0.05 to 2, hydrogen peroxide. The aqueous solution (30% by weight) was set to 0.01 to 〇_5, and the water was set to 10. 7. The method for manufacturing an SOI wafer according to claim 4 or 5, wherein in the step of preparing the bonded substrate, the processed wafer is germanium, sapphire, alumina, quartz, SiC, aluminum nitride, glass. Any of the materials. 8. The method for producing an SOI wafer according to the fourth or fifth aspect of the invention, wherein the heat treatment step is carried out in an atmosphere of any of argon, nitrogen and nitrogen or a mixed gas atmosphere. -40- * 201005883 9. The method for manufacturing an SOI wafer according to claim 4, wherein the heat treatment step is an oxygen atmosphere or a mixture of at least one of argon, nitrogen, and helium. It is carried out in a gas atmosphere. 10. The method of producing an SOI wafer according to claim 4 or 5, wherein the heat treatment step is carried out in a hydrogen atmosphere or in a mixed gas atmosphere of at least one of argon, nitrogen and helium. 11. A method for cleaning a glass treated surface subjected to sand blasting, and a method for washing a glass treated surface subjected to sandblasting, characterized in that after at least washing the treated surface with HF, alkali washing is performed. . 12. The method for cleaning a glass-treated surface subjected to sandblasting according to the eleventh aspect of the patent application, wherein the glass-based quartz glass. A cleaning method for a glass-treated surface subjected to sand blasting according to the first aspect of the patent application, wherein the glass is formed into a wafer. 14. A method of cleaning a glass-treated surface subjected to sand blasting according to claim 13 wherein said wafer is laminated with a single crystal layer. • 15. The method for cleaning a glass treated surface subjected to grit blasting according to claim 14 wherein the HF cleaning is protected by a protective tape or an organic protective film on the single crystal layer on the wafer. The method for washing a glass treated surface subjected to sand blasting according to any one of claims 11 to 15, wherein the alkali solution used in the alkali washing is NH40H, NaOH, Any one of K0H and CsOH or H202 added to any of them. 1 7 . The method for cleaning a glass treated surface of the sandblasting treatment of -41 - 201005883, as claimed in any one of claims 1 to 15 of the patent application, wherein the alkali cleaning solution used in the above-mentioned washing and cleaning When the concentration composition is Η2〇 as 10, Νίί4〇Η (29% aqueous solution) is S.5~2, Η2〇2 (converted to 3〇% aqueous solution) is a SCI solution of 0.01 to 0.5. 18. The method for cleaning a glass-treated surface subjected to sand blasting according to any one of claims 11 to 15, wherein the alkali solution used for the net φ is an alkali-based organic solvent. 19. The method for cleaning a glass-treated surface subjected to sand blasting according to any one of claims 11 to 15, wherein the HF washing is performed by etching a glass treated surface of the blasting treatment to a thickness of 20 nm or more. . A glass for blasting treatment characterized by being washed by a washing method of a glass-treated surface subjected to grit blasting according to any one of claims 11 to 19. -42-