CN107895693A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
- Publication number
- CN107895693A CN107895693A CN201710872428.9A CN201710872428A CN107895693A CN 107895693 A CN107895693 A CN 107895693A CN 201710872428 A CN201710872428 A CN 201710872428A CN 107895693 A CN107895693 A CN 107895693A
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- China
- Prior art keywords
- grinding
- chip
- wafer
- recess
- back side
- Prior art date
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- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 238000000227 grinding Methods 0.000 claims abstract description 203
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 230000007547 defect Effects 0.000 claims description 23
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000011010 flushing procedure Methods 0.000 claims description 10
- 229910001651 emery Inorganic materials 0.000 description 25
- 238000010586 diagram Methods 0.000 description 13
- 239000012530 fluid Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 238000010276 construction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- UQMRAFJOBWOFNS-UHFFFAOYSA-N butyl 2-(2,4-dichlorophenoxy)acetate Chemical compound CCCCOC(=O)COC1=CC=C(Cl)C=C1Cl UQMRAFJOBWOFNS-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The processing method that chip is provided, productivity and processability are improved when the recess of the chip to the back side with ring-type rib is ground.A kind of processing method of chip (W), the chip have the device area (W1) formed with multiple devices and the periphery remaining area (W2) around the device area on front, and the processing method of the chip has following process：Chip (W) front (WS) side is maintained on chuck table (22), the region equivalent to device area at chip (W) back side (WR) is ground and forms recess (W3), so as to form the ring-type rib (W4) for including the periphery remaining area (W2) in the outer circumferential side of the recess (W3)；And while lapping liquid is provided to the back side (WR) while being rotated the grinding pad (78b) of chuck table (22) and the diameter with more than or equal to chip (W) and grinding pad (78b) is pressed against on chip (W) back side, so as to be ground to recess (W3).
Description
Technical field
The present invention relates to the processing method of chip.
Background technology
Generally in the manufacturing process of device, it is ground at the back side to chip and chip is worked into desired thickness
Afterwards, milled processed is implemented in order to improve the intensity of its flatness or chip.Especially for memory device etc., it is necessary in device
What formation was caught to metal after part is formed removes defect layer.The further thinning of chip of processing is ground, thickness becomes tens of μm
Left and right.As a result, in grinding step and go in defect layer formation process, the possibility increase of wafer breakage.On the other hand, as
For by grinding wafer to it is very thin and improve operability processing, be known to so-called TAIKO (registration mark) grinding (for example,
With reference to patent document 1).TAIKO grinding method be：To the central portion equivalent to the region for being provided with device at the back side of chip
It is ground and forms recess, by grinding wafer into the shape in peripheral part with ring-type rib.
Patent document 1：Japanese Unexamined Patent Publication 2009-176896 publications
It will be ground in the chip for having carried out TAIKO grindings, it is necessary to after grinding by grinding caused by the back side in chip
Strain is cut to remove.For example, in the case of the grinding at the back side of the grinding pad progress chip smaller than recess using diameter, due to grinding
Mill pad can not cover recess entire surface simultaneously, so productivity is deteriorated, there are the following problems：Generating can not be to along ring-type
The outer peripheral edge of the recess of rib is ground or can not be sufficiently carried out the region of grinding.
The content of the invention
Therefore, in the present invention, its object is to, there is provided the processing method of chip, there is ring-type rib to the back side
The recess of chip can improve productivity and processability when being ground.
In order to solve above-mentioned problem and reached purpose, the present invention is a kind of processing method of chip, and the chip is in front
It is upper that there is the device area formed with multiple devices and the periphery remaining area around the device area, wherein, the chip adds
Work method has following process：Ring-type rib formation process, the face side of the chip is maintained on chuck table, right
The region equivalent to the device area at the back side of the chip is ground and forms recess, so as in the outer circumferential side shape of the recess
Into the ring-type rib comprising the periphery remaining area；And grinding step, the face side of the chip is maintained at chucking work
On platform and expose the recess, while providing lapping liquid to the back side while making chuck table and having to be more than or equal to the chip
The grinding pad of diameter rotated and the grinding pad is pressed against on the back side of the chip, so as to be ground to the recess.
According to the structure, by using the grinding pad of the diameter with more than or equal to chip, recess and ring-type can be added
Strong portion is ground simultaneously, therefore can be fully ground untill near the outer peripheral edge of the recess along ring-type rib, can
Realize the productive raising of chip.
Also, in the structure shown here, it is possible to have following goes defect layer formation process：Implement the grinding step it
Afterwards, while providing the flushing liquor different from the lapping liquid to the back side of the chip of rotation, while making grinding pad rotation go forward side by side
Row presses and is formed on the recess and remove defect layer.
According to the present invention, by using the grinding pad of the diameter with more than or equal to chip, recess and ring-type can be added
Strong portion is ground simultaneously, therefore can be fully ground untill near the outer peripheral edge of the recess along ring-type rib, can
Realize the productive raising of chip.
Brief description of the drawings
Fig. 1 is the stereogram of the device wafer of the processing object of the processing method for the chip for being shown as present embodiment.
Fig. 2 is the stereogram of one for showing to perform the grinding lapping device of the processing method of the chip of present embodiment.
Fig. 3 is the stereogram of state for showing to be ground the back side of chip by grinding unit.
Fig. 4 is the sectional view for showing the chip that grinding obtains.
Fig. 5 is the stereogram for the structure for showing grinding unit.
Fig. 6 is the schematic diagram for the peripheral structure for showing grinding unit.
Fig. 7 is the schematic diagram of state for showing to be ground the back side of chip in Fig. 6 structure.
Fig. 8 is the schematic diagram of the state of grinding pad when showing to be ground the rear side of chip.
Fig. 9 is the figure for showing to be ground the observation position of vestige.
Figure 10 is the schematic diagram for the variation for showing chip.
Figure 11 is the schematic diagram for the variation for showing chip.
Figure 12 is the schematic diagram of the peripheral structure for the grinding unit for showing other modes.
Label declaration
2：It is ground lapping device；22：Chuck table；38a、38b：Grinding unit；46a、46b：It is ground emery wheel；48、
148：Grinding unit；78、178：Grind emery wheel；78b、178b：Grinding pad；W：Chip；W1：Device area；W2：Periphery remaining area
Domain；W3：Recess；W3A：Peripheral part；W4：Ring-type rib；W4A：Inwall；WR：The back side.
Embodiment
The mode (embodiment) for implementing the present invention is described in detail referring to the drawings.The present invention does not limit
In the content described in following embodiment.Also, those skilled in the art are included in following described structural element
Structure be readily apparent that, practically identical.Furthermore it is possible to the structure progress to following record is appropriately combined.Further, it is possible to
Various omissions, displacement or the change of structure are carried out without departing from the spirit and scope of the invention.
Fig. 1 is the stereogram of the device wafer of the processing object of the processing method for the chip for being shown as present embodiment.
The processing method of the chip of present embodiment device wafer (hreinafter referred to as chip) W is implemented so-called TAIKO grinding and
Grinding strain is removed by grinding.As shown in figure 1, wafer W is the discoideus semiconductor wafer or light using silicon as raw material
Device wafer.Wafer W has the device area W1 and periphery remaining area W2 around device area W1 on positive WS, in the device
In the W1 of part region, formed with device DB in the region that a plurality of spacing track (segmentation preset lines) S formed by clathrate is marked off.
In addition, in Fig. 1, device area W1 and periphery remaining area W2 border are shown in dash-dot lines for convenience of explanation, but it is real
In boundary and line is not present on border.Also, in recess WA of the outer peripheral edge of wafer W formed with the crystal orientation for representing wafer W.
The back side WR in positive WS opposite side of the wafer W region equivalent to device area W1 is being ground to rule
After fixed thickness, processing is ground.In addition, wafer W is the workpiece for the tabular for being carried out grinding and attrition process,
It can be the semiconductor substrate of the material (such as GaAs etc.) beyond silicon.
Fig. 2 is the stereogram of one for showing to perform the grinding lapping device of the processing method of the chip of present embodiment.
Grinding lapping device 2 is the processing unit (plant) of full-automatic type, under the control of control unit 100, is configured to wafer W fully automatically
Implement by moving into processing, thick grinding, fine ginding processing, attrition process, going defect layer to process, cleaning treatment and take out of processing structure
Into a series of operation.
As shown in Fig. 2 grinding lapping device 2 has the base station 4 supported to each structural portion.In the upper surface of base station 4
Front formed with opening 4a, the 1st transport unit 6 transported to wafer W is provided with opening 4a.Also,
Opening 4a's is located further forward in the region of side formed with mounting table 10a, 10b, and mounting table 10a, 10b is more to that can store respectively
Box 8a, the 8b for opening wafer W are loaded.Wafer W be accommodated in the state of box 8a, 8b be moved to grinding lapping device 2 in.
Also, the aligning guide 12 for the contraposition for carrying out wafer W is provided with base station 4.The aligning guide 12 is included for brilliant
What piece W was temporarily put temporarily puts workbench 14, for example, temporarily being put to being transported and being temporarily placed on from box 8a using the 1st transport unit 6 on workbench 14
The center of wafer W aligned.
The supporting construction 16 across the gate of aligning guide 12 is configured with base station 4.Set on the supporting construction 16
There is the 2nd transport unit 18 transported to wafer W.2nd transport unit 18 can be in left and right directions (X-direction), front and back
Moved on to (Y direction) and above-below direction (Z-direction), for example, the wafer W aligned by aligning guide 12 is removed
It is sent to rear (+Y direction in Fig. 2).
At the rear of opening 4a and aligning guide 12 formed with opening 4b.Discoid rotation is configured with opening 4b
Workbench 20, the rotary work-table 20 are rotated around the rotary shaft extended in vertical direction.In rotary work-table 20
Upper surface is with substantially equal angular 4 chuck tables (maintaining part) 22 being arranged at intervals with to wafer W progress attracting holding.
Moved into the 2nd transport unit 18 from the wafer W that aligning guide 12 takes out of in a manner of rear side is exposed upward
Onto chuck table 22, the chuck table 22 is located at the carrying-in/carrying-out position A of front side.Rotary work-table 20 is according to up time
Pin direction of rotation R direction is rotated, by chuck table 22 be positioned at successively carrying-in/carrying-out position A, thick grinding position B,
Fine ginding position C and abrasion site D.
Each chuck table 22 respectively with the rotary driving source such as motor is (not shown) links, be configured to around in lead
The rotary shaft that Nogata upwardly extends is rotated, and in the present embodiment, each chuck table 22 can pass through control unit 100
Control is rotated according to the speed (such as 300~1000rpm) of regulation.The upper surface of each chuck table 22 turns into chip
W carries out the retaining surface of attracting holding.The retaining surface is by being formed at the stream (not shown) of the inside of chuck table 22 with inhaling
Draw source connection (not shown).By act on retaining surface attraction source negative pressure to the wafer W that is moved on chuck table 22
Face side attracted.
The supporting construction 24 for being provided with the wall-like extended upward is erect at the rear of rotary work-table 20.In supporting construction
24 preceding surface is provided with two groups of elevating mechanisms 26.Each elevating mechanism 26 has two along vertical direction (Z-direction) extension
Riser guide 28, self-powered platform 30 is provided with a manner of it can slide on the riser guide 28.
Be fixed with nut portions (not shown) in the back-surface side of self-powered platform 30, the nut portions with parallel to riser guide
28 lifting ball-screw 32 screws togather.The one end and lifting pulse motor 34 for lifting ball-screw 32 link.Pass through lifting
Pulse motor 34 is rotated lifting ball-screw 32, so that self-powered platform 30 moves down along on riser guide 28
It is dynamic.
The preceding surface of self-powered platform 30 is provided with fixture 36.Lifting work in the top that position B is cut positioned at corase grind
Make on the fixture 36 of platform 30, be fixed with and the grinding unit 38a that the corase grind that corase grind is cut is cut is carried out to wafer W.On the other hand, exist
On the fixture 36 of the self-powered platform 30 of fine ginding position C top, the fine grinding that fine ginding is carried out to wafer W is fixed with
The grinding unit 38b cut.It is accommodated with the main shaft for forming rotary shaft respectively in grinding unit 38a, 38b main shaft shell 40
42, it is fixed with discoid wheel mounting seat 44 in the bottom (leading section) of each main shaft 42.In grinding unit 38a wheel mounting seat
44 lower surface is provided with the grinding emery wheel 46a for the grinding grinding tool cut with corase grind, in grinding unit 38b wheel mounting seat 44
Lower surface be provided with fine ginding grinding grinding tool grinding emery wheel 46b.The upper end side of each main shaft 42 and motor etc.
Rotary driving source is (not shown) to be linked, and emery wheel 46a, 46b from the revolving force of rotary driving source transmission by being rotated for grinding.
While chuck table 22 and main shaft 42 are rotated, while decline grinding emery wheel 46a, 46b, and on one side
The grinding fluids such as pure water are provided while making the back side side contacts of grinding emery wheel 46a, 46b and wafer W, thereby, it is possible to wafer W is carried out
Corase grind is cut or fine ginding.Also, grinding unit 48 is provided near abrasion site D, the grinding unit 48 is to utilizing grinding
The back side for the wafer W that unit 38a, 38b are ground is ground, and defect layer G (Fig. 1) is removed in generation on the back side.
The cleaning unit 52 cleaned to wafer W is provided with the front of aligning guide 12, utilizes the 2nd transport unit 18
The wafer W that formation after grinding has defect layer G is transported on cleaning unit 52 from chuck table 22.It is single using the 1st conveyance
Wafer W after 6 pairs of member is cleaned by cleaning unit 52 is transported and is accommodated in box 8b.
Then, grinding unit is illustrated.Fig. 3 is the shape for showing to be ground the back side of chip by grinding unit
The stereogram of state, Fig. 4 are the sectional views for showing the chip that grinding obtains.Grinding unit 38a (38b) is as described above to chip
W back side WR sides are ground.As shown in figure 3, front protecting band T is pasted for protection device DB (Fig. 1) and in positive WS sides,
Wafer W is maintained on chuck table 22 across front protecting band T.Grinding unit 38a (38b), which has, to be provided with corase grind and cuts
With the grinding emery wheel 46a (46b) of the grinding grinding tool of (fine ginding use).Grinding emery wheel 46a (46b) is formed as external diameter and compares wafer W
Device area W1 radius it is big and smaller than device area W1 diameter.
In the present embodiment, rotate chuck table 22 and rotate grinding emery wheel 46a while declining, from
And the back side WR of wafer W of the grinding grinding tool of rotation with rotating is set to contact and be ground.Now, for example, will grinding emery wheel 46a
The control of grinding grinding tool contacted for pivot always with the back side WR of wafer W, and the not periphery remaining area with wafer W
W2 back side side contacts.By such control, only to entering in the WR of the back side equivalent to device area W1, central portion region
Row grinding, it is as shown in Figure 3 and Figure 4, residual in the part equivalent to periphery remaining area W2 overleaf formed with recess W3 on WR
Stay and formed with the ring-type rib W4 with thickness same before grinding.The description exaggerated in figs. 3 and 4,
For example, in the case where the diameter of wafer W is set into 300mm, ring-type rib W4 width is 2~3mm or so.And
And preferably ring-type rib W4 thickness is hundreds of μm.On the other hand, recess W3 thickness can be made to be as thin as 10~100 μm of left sides
It is right.
Fig. 5 is the stereogram for the structure for showing grinding unit, and Fig. 6 is the schematic diagram for the peripheral structure for showing grinding unit.
Fig. 7 is the schematic diagram of state for showing to be ground the back side of chip in Fig. 6 structure.As shown in figure 5, in the (figure of base station 4
2) supporting construction 54 for being provided with bulk is erect in upper surface.The rear surface of supporting construction 54 is provided with horizontal movement unit
56, the horizontal movement unit 56 makes grinding unit 48 be moved in the horizontal direction in (here, X-direction).
Horizontal movement unit 56 has a pair of horizontal guide rails 58, a pair of horizontal guide rails 58 and horizontal direction (X-direction)
It is parallel and be fixed on the rear surface of supporting construction 54.It is provided with and is moved horizontally in a manner of it can slide on horizontal guide rail 58
Workbench 57.The back-surface side for moving horizontally workbench 57 is provided with nut portions (not shown), the nut portions with parallel to water
The horizontal ball-screw (not shown) of level gauge 58 screws togather.
The one end of horizontal ball-screw links with pulse motor 59.Horizontal ball-screw is made by pulse motor 59
Rotated, moved in the horizontal direction in (X-direction) along horizontal guide rail 58 so that moving horizontally workbench 57.In level
The back-surface side of mobile work platform 57 is provided with vertical mobile unit 64, and the vertical mobile unit 64 makes grinding unit 48 vertical
Moved on direction (Z-direction).Vertical mobile unit 64 has a pair of vertical guide rails 66, a pair of vertical guide rails 66 and vertical side
It is parallel to (Z-direction) and be fixed on the rear surface for moving horizontally workbench 57.Side on vertical guide rail 66 that can slide
Formula is provided with vertical mobile work platform 68.Nut portions are provided with the front-surface side (inner face side) of vertical mobile work platform 68 (not
Diagram), the nut portions screw togather with the vertical ball-screw (not shown) parallel to vertical guide rail 66.
The one end of vertical ball-screw links with pulse motor 70.Vertical ball-screw is made by pulse motor 70
Rotated, so that vertical mobile work platform 68 moves along vertical guide rail 66 in vertical direction (Z-direction).Vertical
The grinding unit 48 being ground to the upper surface of wafer W is fixed with the rear surface (front) of mobile work platform 68.Grinding
The main shaft 74 for forming rotary shaft is accommodated with the main shaft shell 72 of unit 48, circle is fixed with the bottom of main shaft 74 (leading section)
The wheel mounting seat 76 of plate-like.The grinding emery wheel with taking turns 76 roughly the same diameter of mounting seat is installed in the lower surface of wheel mounting seat 76
78.Grinding emery wheel 78 has：Emery wheel base station 78a, it is formed by stainless steel and other metal materials；And discoid grinding pad 78b,
It is on emery wheel base station 78a lower surface.
On grinding pad 78b, it preferably for example can be dispersed in abrasive particle using the grinding pad of bonded-abrasive type, the grinding pad
It is fixed in the base material being made up of polyurethane and/or non-woven fabrics and using the bonding agent of appropriate liquid and obtained.As solid
The grinding pad of abrasive particle type is determined, for example containing silica (SiO preferably in above-mentioned base material2) particle is as solid phase reaction particulate
Son, or not only also contain GC (Green Carbide) abrasive particle containing silicon dioxide granule in above-mentioned base material.It is anti-as solid phase
Particulate is answered, is not limited in silica, ceria (CeO can also be used2) or zirconium oxide (ZeO2) etc..As long as abrasive particle
It is the abrasive particle that Mohs' hardness is higher than wafer W and can be ground to the wafer W, for example, in the feelings that wafer W is silicon wafer
Under condition, preferably using Mohs' hardness be more than 5 material as main material abrasive particulate material, for example, it is also possible to instead of GC abrasive particles and
Contain the abrasive particle such as diamond or aluminum oxide, ceria, cBN (cubic boron nitride).
As shown in fig. 6, there is grinding unit 48 fluid for running through main shaft 74, wheel mounting seat 76 and emery wheel base station 78a to carry
For road 79.It is to provide lapping liquid to being maintained at the back side WR for the wafer W on chuck table 22 and exposed that the fluid, which provides road 79,
Or the stream of flushing liquor, the fluid provide road 79 and provide source and flushing liquor offer via electromagnetic switching valve (not shown) and lapping liquid
Source is selectively connected.Lapping liquid is the liquid provided when the back side WR to wafer W is ground processing, and it contains can be with
Wafer W occurs chemical reaction and implements CMP (cmps；Chemical Mechanical Polishing) material.
In the present embodiment, because wafer W is silicon wafer, so for example using the lapping liquid of alkalescence.Also, flushing liquor is in chip
The liquid provided during defect layer G (Fig. 1), only the material structure by not occurring actually to chemically react with wafer W are removed in W back side WR generations
Into, such as use pure water.
In the present embodiment, as shown in Figure 6 and Figure 7, grinding pad 78b is formed larger than larger straight equal to wafer W
Footpath is (for example, wafer W：300mm, grinding pad：450mm), grinding unit 48 is by the back side WR entire surfaces covering of wafer W and relative
Prejudicially configured in chuck table 22.Specifically, the ring-type that grinding pad 78b is configured on the back side WR by wafer W adds
Strong portion W4 and recess W3 coverings, are ground simultaneously by single grinding pad 78b to ring-type rib W4 and recess W3.At this
In embodiment, it is same configuration relation to make grinding pad 78b and wafer W, is generated on the back side WR of wafer W and removes defect layer G (figures
1)。
Then, the processing method of chip is illustrated.As shown in Fig. 2 box 8a will be accommodated in by the 1st transport unit 6
In wafer W pulled out from box 8a and be transported to and temporarily put on workbench 14, the center of wafer W is carried out in workbench 14 is temporarily put pair
Position.
Then, the 2nd transport unit 18 will be removed positioned at moving into using temporarily putting the wafer W that workbench 14 aligned and be transported to
On out position A chuck table 22, front protecting band T is set to carry out attracting holding by chuck table 22 towards downside.
Thus, wafer W is maintained on chuck table 22 and back side WR exposes.The wafer W is being carried out using chuck table 22
After attracting holding, the rotary work-table 20 is set to be rotated by 90 ° according to the direction that turns clockwise shown in arrow R.Thus, will protect
Hold the wafer W on chuck table 22 and be positioned at the thick grinding position B opposed with roughly grinding the grinding unit 38a that cuts.
In the corase grind of wafer W is cut, for the wafer W positioned at thick grinding position B, while make chuck table 22 for example by
Rotated according to 300rpm, while make grinding emery wheel 46a with the identical direction of chuck table 22 for example according to 6000rpm
Rotated, and provide grinding fluid while the grinding mill for being acted lifting pulse motor 34 and cutting corase grind
Tool contacts with the back side WR of wafer W.Now, for example, being the always back of the body with wafer W by the grinding grinding tool control for being ground emery wheel 46a
Face WR pivot contact, and not back side side contacts with the periphery remaining area W2 of wafer W, make grinding emery wheel 46a by
Defined amount is fed downward according to defined grinding and feeding speed, and the corase grind for implementing the back side WR of wafer W is cut.By such
Control, as shown in figure 3, being only ground to the region of the central portion equivalent to device area W1 in the WR of the back side and forming recess
W3, and remained and formed with ring-type rib W4 (the ring-type ribs comprising periphery remaining area W2 around recess W3
Formation process).Because ring-type rib W4 is not ground, thus with thickness same before grinding.
At the end of corase grind is cut, rotary work-table 20 is further rotated 90 degree according to the direction that turns clockwise, will roughly grind
The wafer W for cutting end is positioned at fine ginding position C.In the fine ginding, while making chuck table 22 for example according to 300rpm
Rotated, while making grinding emery wheel 46b with for example being revolved on the identical direction of chuck table 22 according to 6000rpm
Turn, and provide grinding fluid while being acted lifting pulse motor 34 and making the grinding grinding tool and crystalline substance of fine ginding
Piece W back side WR contacts.In this case, for example, also by be ground emery wheel 46b grinding grinding tool control for always with wafer W
Back side WR pivot contact, and the not back side side contacts with the periphery remaining area W2 of wafer W, make grinding emery wheel 46b
Defined amount is fed downward according to the grinding and feeding speed of regulation, implements the back side WR of wafer W fine ginding.Pass through the essence
The recess W3 of wafer W is refined to desired thickness (such as 30 μm) by grinding.In the present embodiment, ring-type rib is formed
The process that process is not only cut comprising corase grind, the also process comprising fine ginding.
By making rotary work-table 20 further rotate 90 degree according to the direction that turns clockwise, fine ginding will be remain and terminated
The chuck table 22 of wafer W be positioned at the abrasion site D opposed with grinding unit 48, implement grinding step.
In grinding step, as shown in fig. 7, the back side WR entire surfaces of wafer W are covered in the grinding pad 78b of grinding unit 48
Implement grinding in the state of lid.In the grinding step, fluid provides road 79 and provides source via electromagnetic switching valve 61 and lapping liquid
62 connections, provide road 79 by fluid and provide the lapping liquid of alkalescence between the back side WR of wafer W and grinding pad 78b.Also,
While making chuck table 22 for example be rotated according to arrow α direction with 505rpm, and make grinding pad 78b according to arrow α
Direction is for example rotated with 500rpm, while making grinding pad 78b be pressed against wafer W with defined load (such as 25kPa)
Implement the back side WR of wafer W grinding on the WR of the back side.By the grinding step, by above-mentioned ring-type rib formation process
In the grinding that is generated when being ground to the back side WR of wafer W strain and remove.In the grinding step, due to grinding pad 78b
Base material follow wafer W back side WR shape and elastic deformation occurs, so can simultaneously to recess W3 and ring-type rib
W4 almost entire surface is ground, and realizes the shortening of milling time, it is possible to increase the productivity of attrition process.
Also, in the processing method of the chip of present embodiment, it can also be ground in the back side WR to wafer W
Performed after grinding step and go defect layer formation process, formed on the WR of the back side and remove defect layer.This goes defect layer formation process and grinding
Process can equally be performed using grinding unit 48.Defect layer is removed to miscellaneous based on the metals such as copper (Cu) contained by wafer W
Matter atom is caught and prevents device DB to be easily polluted by the external foreign matters.Therefore, it is, for example, memory (flash memory or DRAM in device DB
(Dynamic Random Access Memory) etc.) in the case of, defect layer can be removed by being set on the back side WR of wafer W
And prevent from polluting caused by impurity.
Although eliminating diagram in defect layer formation process is gone, electromagnetic switching valve 61 is switched over and carries flushing liquor
Supply source 63 and fluid provide road 79 and are connected, by fluid provide road 79 by flushing liquor (pure water) provide back side WR to wafer W with
Between grinding pad 78b.Also, it is same with grinding step, while making chuck table 22 according to arrow α direction for example with 505rpm
Rotated, and grinding pad 78b is for example rotated according to arrow α direction with 500rpm, while make grinding pad 78b with than
The small defined load (such as 5kPa) of grinding step is pressed against on the back side WR of wafer W and in the back side WR (recesses of wafer W
W3 formed on) and remove defect layer.It is then grinding step and the additional process that performs because this goes defect layer formation process, so can also
Defect layer formation process is not performed and ends at grinding step.
Then, the recess W3 of the hardness to grinding pad 78b base material and wafer W abrasive areas illustrates.Fig. 8 is to show
Go out the schematic diagram of the state of grinding pad when being ground to the rear side of chip, Fig. 9 is the observation position for showing to be ground vestige
Figure.As described above, the wafer W of present embodiment is the structure for overleaf having on WR recess W3 and ring-type rib W4.
Therefore, as shown in figure 8, in the case where being ground to the recess W3 and ring-type rib W4 of wafer W simultaneously, grinding pad 78b
Follow the shape of wafer W and elastic deformation occurs.Here, it is higher by defined height than recess W3 because ring-type rib W4 is located at
H1 (such as hundreds of μm) position, so being inferred to produce in the peripheral part W3A of the recess W3 along ring-type rib W4
Do not abutted with grinding pad 78b and can not be ground or can not be sufficiently carried out the region of grinding.
Inventor is in view of the problem is deeply ground to the hardness of grinding pad 78b base material and recess W3 abrasive areas
Study carefully.Specifically, using the wafer W formed with ring-type rib W4 around recess W3, the periphery to residuing in recess W3
Grinding vestige (Saw Mark) during portion W3A fine ginding is observed, and the inwall W4A from ring-type rib W4 is ground to residual
The distance L2 of the position of sheeter lines mark is measured.In the present embodiment, one as wafer W, using a diameter of 300mm,
Ring-type rib W4 width L1 is 2.1mm, from recess W3 to the silicon wafer that ring-type rib W4 height H1 is 625 μm.It is excellent
Choosing width L1 now and height H1 ratio L1/H1 is less than more than 34, in this embodiment L1/H1=3.36.As shown in figure 9,
Include the observation that every 90 degree of 4 opening positions including the position equivalent to the recess WA of wafer W be ground vestige.And
And light microscope is used in the observation of grinding vestige.
Here, for the wafer W of same shape, diameter (such as 150mm) smaller than wafer W grinding pad is being used
Conventional structure in, the distance L2 from ring-type rib W4 inwall W4A to the position of residual grinding vestige is about 0.6mm
(600 μm) left and right.
On the other hand, in the present embodiment, hardness higher (A hardness is 49) and relatively low (A hardness is 46) is prepared
Two grinding pad 78b, the recess W3 of wafer W is ground using each grinding pad.On the wafer W after grinding, Fig. 9's
(1) position of~(4) be ground the observation of vestige.These observation results are shown in table 1.
【Table 1】
(table 1)
As shown in table 1, in the recess W3 and ring-type rib W4 using the diameter grinding pad 78b bigger than wafer W to wafer W
In the structure being ground simultaneously, the value regardless of hardness, it can shorten compared with conventional structure and be ground trace away from residual
The distance L2 (the grinding distance in table 1) of the position of mark, the distance is changed into conventional less than 1/4.In this embodiment, if A is hard
Relatively low grinding pad is spent, then the effect is bigger, and the distance of the position away from residual grinding vestige can be made compared with conventional structure
L2 is less than 1/8, can become much larger recess W3 abrasive areas.Also, due to recess W3 and the ring-type reinforcement to wafer W
Portion W4 is ground simultaneously, so shortening the time of attrition process, the milling time in conventional structure is about 5 minutes,
And it can about foreshorten to 90 seconds in the present embodiment.Also, also act the removal amount (grinding rate) made in wafer W
The effect that deviation diminishes.
In the present embodiment, the width L1 for having used ring-type rib W4 is 2.1mm, from recess W3 to ring-type rib
W4 height H1 is the wafer W of 625 μm (L1/H1=3.36), but is not limited to this.From the sight for following easness of grinding pad
From the point of view of point, more preferably ring-type rib W4 height H1 is relatively low and/or ring-type rib W4 inwall is formed as skewed crystalline substance
Piece.Figure 10 and Figure 11 is the schematic diagram for the variation for showing wafer W.As shown in Figure 10, can also use from recess W3 to ring
Wafer W lower than Fig. 8 example shape rib W4 height H1.Also, as shown in figure 11, it can also make ring-type rib W4's
Inwall W4A is formed as from ring-type rib W4 towards centroclinal inclined plane.
According to present embodiment, due to using the diameter grinding pad 78b bigger than wafer W by the whole of the back side WR of wafer W
Face is covered, and recess W3 and ring-type rib W4 are ground simultaneously, so shortening the milling time to recess W3, improved
The processability and productivity of wafer W.In addition, by being ground to recess W3 and ring-type rib W4 simultaneously, can fully grind
Untill being ground to along near ring-type rib W4 recess W3 peripheral part, it can correspondingly increase the chip cut out from wafer W
Quantity.Also, it is ground by using grinding pad 78b, for example, straining the structure removed with will be ground by wet etching
(stress elimination) is compared, it is possible to increase the flatness of the wafer W (recess W3) after grinding.
Also, according to present embodiment, due to defect layer formation process is gone, after grinding step is implemented, on one side
There is provided the flushing liquor different from lapping liquid to the back side WR of the wafer W of rotation, while rotate grinding pad 78 and pressed and
Formed in recess W3 and remove defect layer, therefore can used and be readily formed defect layer with grinding step identical grinding pad 78b.
Then, the other modes of grinding unit are illustrated.Figure 12 is the periphery for the grinding unit for showing other modes
The schematic diagram of structure.In other modes, as shown in figure 12, grinding unit 148 utilizes grinding pad 178b by the back side WR of wafer W
Local complexity and be ground.Due to main shaft shell 172 possessed by the grinding unit 148, main shaft 174, wheel mounting seat 176,
It is identical with each several part of above-mentioned grinding unit 48 to grind the structure of emery wheel 78 and emery wheel base station 178a, so eliminating explanation.
Grinding pad 178b is formed larger than the larger diameter equal to wafer W (for example, wafer W：300mm, grinding pad：300mm), grind
Unit 148 significantly prejudicially configures relative to chuck table 22.Specifically, grinding pad 178b is configured to grinding pad 178b
Peripheral part the back side WR of wafer W center is covered and radially extends and (leans out) from the back side WR of wafer W.In the state
Under, by being rotated chuck table 22 and grinding unit 148, grinding pad 178b carries out local to the back side WR of wafer W
Pressing, recess W3 and ring-type rib W4 to wafer W are ground simultaneously.
Also, working fluid as shown in figure 12, is configured near grinding emery wheel 178 nozzle 60 is provided, working fluid provides
Nozzle 60 provides lapping liquid or flushing liquor to the back side WR for being maintained at the wafer W on chuck table 22 and exposed.The working fluid
Nozzle 60 is provided to be selectively connected via electromagnetic switching valve 61 and lapping liquid offer source 62 and flushing liquor offer source 63.In the knot
In structure, grinding pad 178b also carries out local pressing, and recess W3 and ring-type rib W4 to wafer W to the back side WR of wafer W
It is ground simultaneously, thereby, it is possible to be fully ground untill near the peripheral part of the recess W3 along ring-type rib W4, therefore
The quantity of the chip cut out from wafer W can correspondingly be increased.Also, it is ground by using grinding pad 178b, for example, with
Make the less grinding pad of diameter only compared with the structure (stress elimination) that the recess of wafer W abuts and removes grinding strain, energy
Enough flatness for improving the wafer W (recess W3) after grinding.
More than, an embodiment of the invention is illustrated, but above-mentioned embodiment is intended only as example proposition
, the scope of invention is not defined.For example, in the present embodiment, using with corase grind cut with fine ginding
The grinding lapping device 2 of grinding unit 38a, 38b and grinding unit 48 performs ring-type rib formation process and grinding step,
But such as ring-type rib shape can certainly be performed using having the single device of grinding unit and grinding unit respectively
Into process and grinding step.
Also, in the present embodiment, as grinding pad 78b, exemplified with securing the particles to by polyurethane and/or nonwoven
Bonded-abrasive polishing pad obtained by the base material that cloth is formed, but can also be provided in the state of abrasive particle is distributed in lapping liquid
Lapping liquid, and carry out the grinding of wafer W using the grinding pad of no bonded-abrasive.
Claims (2)
1. a kind of processing method of chip, the chip is on front with the device area formed with multiple devices and around the device
The periphery remaining area in part region, wherein, the processing method of the chip has following process：
Ring-type rib formation process, the face side of the chip is maintained on chuck table, to the phase at the back side of the chip
Recess is formed when being ground in the region of the device area, it is remaining comprising the periphery so as to be formed in the outer circumferential side of the recess
The ring-type rib in region；And
Grinding step, the face side of the chip is maintained on chuck table and exposes the recess, while being carried to the back side
For lapping liquid while making chuck table and the grinding pad with the diameter more than or equal to the chip be rotated and make the grinding
Pad is pressed against on the back side of the chip, so as to be ground to the recess.
2. the processing method of chip according to claim 1, wherein,
The processing method of the chip goes defect layer formation process with following：After the grinding step is implemented, while to rotation
The back side of the chip turned provides the flushing liquor different from the lapping liquid, while rotate the grinding pad and pressed and at this
Formed on recess and remove defect layer.
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| JP2016195907A JP6723892B2 (en) | 2016-10-03 | 2016-10-03 | Wafer processing method |
| JP2016-195907 | 2016-10-03 |
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| CN111482849A (en) * | 2019-01-25 | 2020-08-04 | 东莞新科技术研究开发有限公司 | Method for reducing thickness of wafer |
| CN113070809A (en) * | 2019-12-17 | 2021-07-06 | 大量科技股份有限公司 | Method and apparatus for detecting polishing pad of chemical mechanical polishing apparatus |
| CN116749073A (en) * | 2023-08-17 | 2023-09-15 | 江苏京创先进电子科技有限公司 | Main shaft pitching and swaying adjusting structure and method and wafer thinning machine |
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| JP7349901B2 (en) * | 2019-12-24 | 2023-09-25 | 株式会社ディスコ | grinding equipment |
| JP7408237B2 (en) * | 2020-01-16 | 2024-01-05 | 株式会社ディスコ | Wafer processing method |
| JP7391476B2 (en) * | 2020-03-17 | 2023-12-05 | 株式会社ディスコ | Grinding method |
| US11837632B2 (en) | 2021-03-24 | 2023-12-05 | Globalwafers Co., Ltd. | Wafer |
| TWI818416B (en) * | 2021-03-24 | 2023-10-11 | 環球晶圓股份有限公司 | Wafer |
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Also Published As
| Publication number | Publication date |
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| JP6723892B2 (en) | 2020-07-15 |
| TW201813768A (en) | 2018-04-16 |
| CN107895693B (en) | 2023-06-20 |
| TWI719250B (en) | 2021-02-21 |
| KR102255728B1 (en) | 2021-05-26 |
| KR20180037123A (en) | 2018-04-11 |
| JP2018060873A (en) | 2018-04-12 |
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