TWI727089B - Wafer processing method and polishing device - Google Patents

Wafer processing method and polishing device Download PDF

Info

Publication number
TWI727089B
TWI727089B TW106130122A TW106130122A TWI727089B TW I727089 B TWI727089 B TW I727089B TW 106130122 A TW106130122 A TW 106130122A TW 106130122 A TW106130122 A TW 106130122A TW I727089 B TWI727089 B TW I727089B
Authority
TW
Taiwan
Prior art keywords
wafer
polishing
liquid
polishing pad
layer
Prior art date
Application number
TW106130122A
Other languages
Chinese (zh)
Other versions
TW201814784A (en
Inventor
宮城有佑
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201814784A publication Critical patent/TW201814784A/en
Application granted granted Critical
Publication of TWI727089B publication Critical patent/TWI727089B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

[課題]提供一種晶圓的加工方法及研磨裝置，其能夠於研磨後快速地轉移至去疵層形成，並且加工成按照設計的晶圓。 [解決手段]晶圓的加工方法是使用研磨墊於晶圓的背面形成去疵層的方法，其包含：晶圓保持步驟，將貼附於晶圓的正面的BG膠帶於工作夾台；應變層去除步驟，一邊在對研磨墊供給研磨液時使研磨墊與工作夾台旋轉，一邊從晶圓的背面去除應變層；研磨液去除步驟，在實施應變層去除步驟後，從噴嘴朝向研磨墊供給清洗液，來將殘存研磨液去除；及去疵層形成步驟，一邊在對研磨墊及晶圓供給未含有磨粒之液體時使研磨墊與工作夾台旋轉，一邊在晶圓的背面形成去疵層。[Question] To provide a wafer processing method and a polishing device, which can quickly transfer to the formation of a defect-removing layer after polishing, and process the wafer into a designed wafer. [Solution] The wafer processing method is to use a polishing pad to form a defect-removing layer on the back of the wafer, which includes the wafer holding step, applying the BG tape attached to the front of the wafer to the work clamp table; strain The layer removal step removes the strained layer from the backside of the wafer while rotating the polishing pad and the work chuck while supplying the polishing liquid to the polishing pad; the polishing liquid removal step, after the strained layer removal step, is directed from the nozzle to the polishing pad Supply a cleaning solution to remove the remaining polishing solution; and the step of forming a defect-free layer, while supplying the polishing pad and wafer with a liquid that does not contain abrasive grains, the polishing pad and the work chuck are rotated while forming on the backside of the wafer Defect layer.

Description

晶圓的加工方法及研磨裝置Wafer processing method and polishing device

發明領域 本發明是有關於一種晶圓的加工方法及研磨裝置。FIELD OF THE INVENTION The present invention relates to a wafer processing method and polishing device.

發明背景 在電子元件製造步驟中，是藉由於大致圓板狀的矽基板等的正面上格子狀地配置排列之被稱為切割道的分割預定線而區劃出複數個區域，並於各個該區域中形成IC(積體電路(Integrated Circuit))、LSI(大型積體電路(Large-Scale Integration))等的元件。藉由像這樣沿著切割道將形成有複數個元件的晶圓分割，而形成一個個的元件。為了謀求元件的小型化及輕量化，通常會先沿著切割道將晶圓切斷來分割成一個個的區域，並對晶圓的背面進行磨削來形成規定的厚度。BACKGROUND OF THE INVENTION In the manufacturing process of electronic components, a plurality of regions are divided by predetermined dividing lines called dicing lanes arranged in a grid pattern on the front surface of a substantially disc-shaped silicon substrate, etc. IC (Integrated Circuit), LSI (Large-Scale Integration) and other components are formed in it. By dividing the wafer in which a plurality of elements are formed along the dicing lane in this way, individual elements are formed. In order to achieve the miniaturization and weight reduction of components, the wafer is usually cut along a dicing line to divide it into individual regions, and the back surface of the wafer is ground to form a predetermined thickness.

當磨削如上述的晶圓的背面時，會在元件的背面生成由微裂隙所構成的1μm左右的磨削應變層。又，因為由磨削應變層而導致元件的抗折強度降低，所以在對晶圓的背面進行磨削來形成規定的厚度之後，會對晶圓的背面施行研磨加工、蝕刻加工等，來將生成於晶圓的背面的磨削應變層去除，以防止元件的抗折強度的降低。When grinding the back surface of the wafer as described above, a grinding strain layer of about 1 μm composed of micro-cracks is generated on the back surface of the device. In addition, since the flexural strength of the element is reduced by grinding the strained layer, the back surface of the wafer is ground to form a predetermined thickness, and then the back surface of the wafer is subjected to polishing processing, etching processing, etc. The grinding strain layer generated on the backside of the wafer is removed to prevent the reduction of the flexural strength of the device.

另一方面，若將背面的應變層去除時，會使去疵効果降低而使晶圓的内部所含有的銅等金屬離子元件朝形成有元件的正面側移動，藉此形成發生電流漏洩之疑慮。為了消除這種問題，所進行的是在晶圓的背面形成磨削應變層(去疵層)之作法。On the other hand, if the strained layer on the back is removed, the effect of removing defects will be reduced, and the metal ion components such as copper contained in the wafer will move toward the front side where the components are formed, thereby causing the suspicion of current leakage. . In order to eliminate this problem, what is being done is to form a grinding strain layer (defect removal layer) on the back of the wafer.

然而，在實施上述內容時，會變得必須有研磨設備與去疵層形成設備，而有導致裝置構成變複雜的問題。針對此問題點，在專利文獻1中已提案有一種具備有研磨墊之研磨裝置，且該研磨墊兼具研磨功能與去疵層形成功能(例如參照專利文獻1)。 先前技術文獻 專利文獻However, when implementing the above content, it becomes necessary to have a polishing device and a de-defect layer forming device, which causes the problem of complicating the device configuration. In response to this problem, Patent Document 1 has proposed a polishing apparatus equipped with a polishing pad, and the polishing pad has both a polishing function and a defect-removing layer forming function (for example, refer to Patent Literature 1). Prior Art Documents Patent Documents

專利文獻1：日本專利特開2015-046550號公報Patent Document 1: Japanese Patent Laid-Open No. 2015-046550

發明概要 發明欲解決之課題 從生產性提升的觀點來看，雖然希望在研磨後立即轉移至去疵層形成，但因為在研磨後的研磨墊上含有研磨液，所以並不能說是可隨即進行去疵層的形成。此外，即便按照設計之値完成研磨，但由於含有研磨液的研磨墊接觸於晶圓，而有產生超過設計值並侵蝕晶圓的疑慮。SUMMARY OF THE INVENTION The problem to be solved by the invention is from the viewpoint of productivity improvement. Although it is desired to transfer to the formation of the defect-removing layer immediately after polishing, the polishing pad after polishing contains polishing liquid, so it cannot be said that it can be removed immediately. The formation of defect layer. In addition, even if the polishing is completed according to the designed value, the polishing pad containing the polishing liquid contacts the wafer, which may exceed the designed value and erode the wafer.

於是，本發明的目的是提供一種晶圓的加工方法及研磨裝置，其能夠在研磨後迅速地轉移至去疵層形成，並且加工成按照設計的晶圓。 用以解決課題之手段Therefore, the object of the present invention is to provide a wafer processing method and a polishing device, which can quickly transfer to the formation of a defect-removing layer after polishing, and process the wafer into a designed wafer. Means to solve the problem

為了解決上述課題並達成目的，本發明的晶圓的加工方法是使用莫氏硬度比晶圓高且具有磨粒的研磨墊，來對在該晶圓的正面形成有元件的晶圓的背面形成去疵層，該晶圓的加工方法的特徵在於包含： 晶圓保持步驟，在晶圓的正面貼附保護構件，且將保護構件側保持於工作夾台的保持面； 應變層去除步驟，一邊在對該研磨墊供給研磨液時旋轉該研磨墊並且使該工作夾台旋轉，一邊以該研磨墊研磨晶圓的背面，藉此從晶圓的背面去除應變層； 研磨液去除步驟，在實施該應變層去除步驟後，從噴嘴朝向該研磨墊供給清洗液，將包含於該研磨墊的殘存研磨液去除；及 去疵層形成步驟，一邊在對該研磨墊及晶圓供給未含有磨粒之液體時旋轉該研磨墊並且使該工作夾台旋轉，一邊以該研磨墊研磨晶圓的背面，藉此於背面形成去疵層。In order to solve the above-mentioned problems and achieve the objective, the wafer processing method of the present invention uses a polishing pad having a higher Mohs hardness than a wafer and has abrasive grains to form the back surface of a wafer with elements formed on the front surface of the wafer. Defect removal layer, the wafer processing method is characterized by including: a wafer holding step, attaching a protective member to the front surface of the wafer, and holding the protective member side on the holding surface of the work clamp table; strain layer removal step, one side When the polishing pad is supplied with the polishing liquid, the polishing pad is rotated and the work clamp table is rotated, while polishing the backside of the wafer with the polishing pad, thereby removing the strain layer from the backside of the wafer; After the strained layer removal step, the cleaning fluid is supplied from the nozzle toward the polishing pad to remove the remaining polishing fluid contained in the polishing pad; and the defect-free layer formation step is to supply the polishing pad and the wafer without abrasive grains. When the liquid is in the liquid state, the polishing pad is rotated and the work chuck is rotated, while polishing the back surface of the wafer with the polishing pad, thereby forming a defect-removing layer on the back surface.

前述去疵層形成步驟亦可一邊將該工作夾台相對該研磨墊水平移動一邊進行。The aforementioned step of forming the defect-removing layer can also be performed while horizontally moving the work clamp table relative to the polishing pad.

本發明的研磨裝置是一種研磨晶圓的研磨裝置，其特徵在於具備： 工作夾台，可旋轉地保持晶圓； 研磨設備，具有對保持於該工作夾台上的晶圓進行研磨，而在該已研磨的晶圓上形成去疵層的研磨墊； 研磨液供給源，對晶圓及該研磨墊供給研磨液； 液體供給源，對晶圓及該研磨墊供給不同於研磨液之未含有磨粒的液體； 控制設備，至少控制該研磨設備與該工作夾台，並在供給研磨液時研磨晶圓，接著在供給未含有該磨粒的液體時形成去疵層；及 噴嘴，相鄰於該工作夾台而設置，將用於去除研磨液的清洗液朝向該研磨墊來供給， 該控制設備更控制成：在磨削晶圓後轉移到去疵層形成時，從該噴嘴朝向該研磨墊供給清洗液，以去除殘存於該研磨墊的研磨液。 發明效果The polishing device of the present invention is a polishing device for polishing wafers, which is characterized by having: a work chuck table for rotatably holding the wafer; and a polishing equipment for polishing the wafer held on the work chuck table, and A polishing pad with a defect-removing layer formed on the polished wafer; a polishing liquid supply source, which supplies polishing liquid to the wafer and the polishing pad; a liquid supply source, which supplies the wafer and the polishing pad with a non-contained liquid that is different from the polishing liquid Abrasive liquid; control equipment, at least control the polishing equipment and the work clamp, and polish the wafer when the polishing liquid is supplied, and then form a defect-removing layer when the liquid not containing the abrasive is supplied; and the nozzle, adjacent It is installed on the work chuck, and the cleaning liquid for removing the polishing liquid is supplied toward the polishing pad. The control device is further controlled to move from the nozzle toward the polishing pad when the wafer is polished and transferred to the formation of the defect-removing layer. The polishing pad supplies a cleaning liquid to remove the polishing liquid remaining on the polishing pad. Invention effect

根據本發明，可以藉由縮短從研磨轉移到去疵層形成的時間，而提升生産性並且按照設計地進行加工。According to the present invention, it is possible to improve productivity and perform processing according to design by shortening the time from polishing to the formation of the defect-removing layer.

用以實施發明之形態 針對用於實施本發明之形態(實施形態)，參照圖式作更詳細之說明。本發明並不因以下的實施形態所記載之內容而受到限定。又，在以下所記載之構成要素中，包含所屬技術區域中具有通常知識者可輕易設想得到之事物或實質上相同之事物。此外，以下所記載之構成是可適當組合的。又，在不脫離本發明之要旨的範圍內，可進行各種構成之省略、置換或變更。Mode for Carrying Out the Invention The mode (embodiment) for carrying out the invention will be described in more detail with reference to the drawings. The present invention is not limited by the content described in the following embodiments. In addition, the constituent elements described below include things that can be easily imagined by persons with ordinary knowledge in the technical area, or things that are substantially the same. In addition, the configurations described below can be combined as appropriate. In addition, various configurations can be omitted, replaced, or changed without departing from the scope of the present invention.

[實施形態1] 依據圖式來說明本發明之實施形態1的晶圓的加工方法。圖1是顯示實施形態1之晶圓的加工方法之加工對象的晶圓的立體圖。圖2是顯示在實施形態1之晶圓的加工方法中所使用之磨削研磨裝置的構成之立體圖。圖3是顯示圖2所示之磨削研磨裝置的研磨設備之構成例的立體圖。[Embodiment 1] The wafer processing method of Embodiment 1 of the present invention will be described based on the drawings. FIG. 1 is a perspective view showing a wafer to be processed in the wafer processing method of the first embodiment. 2 is a perspective view showing the structure of a grinding and polishing apparatus used in the wafer processing method of the first embodiment. Fig. 3 is a perspective view showing a configuration example of a polishing device of the grinding and polishing device shown in Fig. 2.

關於實施形態1之晶圓的加工方法是於晶圓W的背面WR形成去疵層G，並且將晶圓W分割成元件晶片DT(圖1中以虛線表示)的方法。晶圓W是如圖1所示地以矽作為母材的圓板狀的半導體晶圓或光元件晶圓。晶圓W是在藉由在正面WS格子狀地形成的複數條切割道S所區劃出的區域中形成有元件DV。亦即，晶圓W是在正面WS形成有複數個元件DV。晶圓W會在正面WS的背側的背面WR上施行磨削加工等，且於薄化至規定的厚度之後，在背面WR側形成去疵層G。去疵層G是在晶圓W的背面WR，亦即各元件DV的背面WR形成有結晶缺陷、應變等(所謂去疵位置)之層，且為於於此去疵位置上將引發金屬汚染的不純物捕獲、固著之層。在實施形態1中，雖然晶圓W是在背面WR側形成去疵層G後，被分割為含有元件DV的元件晶片DT，但亦可在藉由磨削研磨裝置1被磨削加工之前，先形成從正面WS側至未到達背面WR之溝，再藉由磨削研磨裝置1分割為元件晶片DT之後，於背面WR側形成去疵層G。Regarding the wafer processing method of the first embodiment, a defect-removing layer G is formed on the back surface WR of the wafer W, and the wafer W is divided into element wafers DT (indicated by dotted lines in FIG. 1). The wafer W is a disc-shaped semiconductor wafer or an optical element wafer using silicon as a base material as shown in FIG. 1. In the wafer W, the elements DV are formed in an area partitioned by a plurality of scribe lines S formed in a grid pattern on the front surface WS. That is, the wafer W has a plurality of elements DV formed on the front surface WS. The wafer W is subjected to grinding processing or the like on the back surface WR on the back side of the front surface WS, and after being thinned to a predetermined thickness, the defect removal layer G is formed on the back surface WR side. The de-defect layer G is a layer with crystal defects, strains, etc. (the so-called de-defect position) formed on the back WR of the wafer W, that is, the back WR of each element DV, and it will cause metal contamination at the de-defect position. The layer of impurity capture and fixation. In the first embodiment, although the wafer W is divided into the device wafer DT containing the device DV after the defect removal layer G is formed on the back side WR side, it may be processed before being ground by the grinding and polishing apparatus 1. First, a groove is formed from the front WS side to the back side WR, and then divided into device wafers DT by the grinding and polishing apparatus 1, and then a defect-removing layer G is formed on the back side WR side.

關於實施形態1的晶圓的加工方法是至少使用圖2所示之作為研磨裝置之磨削研磨裝置1。磨削研磨裝置1是為了薄型化而對晶圓W的背面WR進行磨削加工，並且為了對已磨削加工的晶圓W的背面WR高精度地進行平坦化，且於晶圓W的背面WR側形成去疵層G而進行研磨加工的裝置。如圖2所示，磨削研磨裝置1主要具備裝置本體2、第1磨削設備3、第2磨削設備4、研磨設備5、設置於轉台6上的例如4個工作夾台7、片匣8、9、對位設備10、搬入設備11、洗淨設備13、搬出入設備14及控制設備100。Regarding the wafer processing method of the first embodiment, at least the grinding and polishing apparatus 1 as the polishing apparatus shown in FIG. 2 is used. The grinding and polishing device 1 grinds the back surface WR of the wafer W for thinning, and in order to flatten the back surface WR of the ground wafer W with high precision, and is used to perform the grinding process on the back surface WR of the wafer W. The WR side forms the defect removal layer G and performs polishing processing. As shown in FIG. 2, the grinding and polishing apparatus 1 mainly includes an apparatus main body 2, a first grinding device 3, a second grinding device 4, a grinding device 5, four work clamps 7, and a sheet set on a turntable 6, for example. Cartridges 8, 9, alignment equipment 10, carry-in equipment 11, washing equipment 13, carry-out equipment 14 and control equipment 100.

第1磨削設備3是一邊使裝設於主軸的下端之具有磨削磨石的磨削輪31旋轉、一邊沿著與鉛直方向平行的Z軸方向對保持於粗磨削位置B的工作夾台7上的晶圓W的背面WR按壓，藉此對晶圓W的背面WR進行粗磨削加工用之設備。同樣地，第2磨削設備4是一邊使裝設於主軸的下端之具有磨削磨石的磨削輪41旋轉、一邊沿著Z軸方向對保持在位於精磨削位置C的工作夾台7上的粗磨削完成之晶圓W的背面WR按壓，藉此對晶圓W的背面WR進行精磨削加工用之設備。The first grinding equipment 3 is a work clamp that rotates a grinding wheel 31 with a grinding stone installed on the lower end of the spindle and maintains the rough grinding position B along the Z-axis direction parallel to the vertical direction. The back surface WR of the wafer W on the table 7 is pressed to perform rough grinding processing on the back surface WR of the wafer W. Similarly, the second grinding equipment 4 is a work chuck at the finishing grinding position C while rotating a grinding wheel 41 with a grinding stone installed at the lower end of the main shaft. 7 is a device for pressing the back surface WR of the wafer W that has been rough-grinded, thereby performing fine grinding processing on the back surface WR of the wafer W.

研磨設備5是對保持於工作夾台7上的晶圓W進行研磨，且具有在晶圓W上形成去疵層G的研磨墊51的設備。在實施形態1中，如圖3所示，研磨設備5是將裝設於主軸54的下端的研磨墊51相向於工作夾台7的保持面7a來配置。研磨設備5會一邊使研磨墊51旋轉，一邊藉由研磨進給設備53沿著Z軸方向對保持於位於研磨位置D的工作夾台7的保持面7a上的精磨削完成的晶圓W的背面WR按壓。研磨設備5是藉由沿著Z軸方向將研磨墊51按壓於晶圓W的背面WR，而對晶圓W的背面WR進行研磨加工的設備。The polishing equipment 5 is an equipment that polishes the wafer W held on the work chuck 7 and has a polishing pad 51 that forms a defect-removing layer G on the wafer W. In the first embodiment, as shown in FIG. 3, the polishing device 5 is arranged such that the polishing pad 51 mounted on the lower end of the main shaft 54 faces the holding surface 7 a of the work chuck 7. The polishing device 5 rotates the polishing pad 51, while the polishing feed device 53 holds the finished wafer W on the holding surface 7a of the work chuck 7 at the polishing position D along the Z-axis direction. WR press on the back. The polishing equipment 5 is an equipment that grinds the back surface WR of the wafer W by pressing the polishing pad 51 against the back surface WR of the wafer W along the Z-axis direction.

研磨設備5的研磨墊51含有20~50重量%之平均粒徑為0.35~1.7(μm)[中央値]的磨粒。平均粒徑是指在藉由雷射繞射、散射法所求得的粒度分布中的積算値50%的粒徑。所謂在積算値50%的粒徑是指從粒子尺寸較小的粒子開始計數粒子數，而成為總粒子數的50%時的粒徑。研磨墊51中所包含的磨粒是莫氏硬度比構成晶圓W的矽更高的磨粒，且作為形成去疵層G上理想的磨粒，可以使用例如GC(綠碳化矽)、WA(白剛鋁石)、或鑽石。又，研磨墊51所包含的磨粒，作為研磨加工上理想的磨粒，而可以使用例如二氧化矽(SiO2 )、二氧化鋯(ZrO2 )或二氧化鈰(CeO2 )。在實施形態1中，研磨墊51包含有GC等的於形成去疵層G上理想的磨粒、以及二氧化矽等的於研磨加工上理想的磨粒之雙方。The polishing pad 51 of the polishing device 5 contains 20 to 50% by weight of abrasive grains having an average particle diameter of 0.35 to 1.7 (μm) [central value]. The average particle size refers to the particle size that is 50% of the cumulative value in the particle size distribution obtained by the laser diffraction and scattering methods. The so-called particle size at 50% of the cumulative value refers to the particle size when the number of particles is counted starting from the smaller particle size and becomes 50% of the total number of particles. The abrasive grains contained in the polishing pad 51 are abrasive grains having a higher Mohs hardness than silicon constituting the wafer W, and as ideal abrasive grains for forming the defect removal layer G, for example, GC (Green Silicon Carbide), WA (Alundumite), or diamond. In addition, the abrasive grains contained in the polishing pad 51 may be silicon dioxide (SiO 2 ), zirconium dioxide (ZrO 2 ), or ceria (CeO 2 ) as ideal abrasive grains for polishing processing. In the first embodiment, the polishing pad 51 includes both GC and other abrasive grains that are ideal for forming the defect-removing layer G, and silicon dioxide and other abrasive grains that are ideal for polishing processing.

研磨設備5是一邊透過切換閥12將來自研磨液供給源15之具有鹼性的研磨液GL從與研磨墊51分立的噴嘴16供給到晶圓W的背面WR，一邊使用研磨墊51對晶圓W的背面WR施行研磨加工後，一面透過切換閥12將來自液體供給源17的未含磨粒之液體L(實施形態1中為純水)從噴嘴16供給到晶圓W的背面WR，一面使用研磨墊51於晶圓W的背面WR側形成去疵層G。此時，可維持晶圓W的抗折強度。雖然在實施形態1中，將晶圓W的抗折強度維持在1000MPa以上，但本發明並不限定於此，只要設定可得到所期望的元件強度之値即可。於此，作為未含有磨粒之液體，只要是不與晶圓W產生反應的液體即可，在晶圓W是由矽所構成的情況下亦可為純水或於純水中含有添加物，只要實質上不與晶圓W產生反應的液體均可。The polishing equipment 5 supplies the alkaline polishing liquid GL from the polishing liquid supply source 15 from the nozzle 16 separate from the polishing pad 51 to the back surface WR of the wafer W through the switching valve 12, while using the polishing pad 51 to apply the polishing pad 51 to the wafer W. After the back surface WR of W is polished, the liquid L without abrasive grains (pure water in the first embodiment) from the liquid supply source 17 is supplied from the nozzle 16 to the back surface WR of the wafer W through the switching valve 12. The defect removal layer G is formed on the back surface WR side of the wafer W using the polishing pad 51. At this time, the flexural strength of the wafer W can be maintained. Although in Embodiment 1, the flexural strength of the wafer W is maintained at 1000 MPa or more, the present invention is not limited to this, as long as the value is set to obtain the desired element strength. Here, as the liquid that does not contain abrasive grains, any liquid that does not react with the wafer W may be used. In the case where the wafer W is made of silicon, it may be pure water or may contain additives in pure water. , As long as the liquid does not substantially react with the wafer W.

如前述，研磨液供給源15是對晶圓W及研磨墊51供給研磨液GL的供給源。液體供給源17是對晶圓W及研磨墊51供給不同於研磨液GL之未含有磨粒之液體L的供給源。As described above, the polishing liquid supply source 15 is a supply source for supplying the polishing liquid GL to the wafer W and the polishing pad 51. The liquid supply source 17 is a supply source for supplying the wafer W and the polishing pad 51 with a liquid L that does not contain abrasive grains, which is different from the polishing liquid GL.

研磨設備5是在對晶圓W的背面WR施行研磨加工後，從噴嘴20將來自清洗液供給源19之用於從研磨墊51去除研磨液GL的清洗液CL(在實施形態1中為純水)供給至旋轉中的研磨墊51。作為清洗液CL，只要不與晶圓W產生反應的液體即可，在晶圓W是由矽所構成的情況下亦可為純水或於純水中含有添加物，只要是實質上不與晶圓W產生反應的液體均可。又，如圖3所示，研磨設備5具備使研磨墊51與主軸54一起在正交於Z軸方向且與裝置本體2的寬度方向平行之X軸方向上移動的X軸移動設備52。噴嘴20是相鄰於研磨位置D的工作夾台7而設置，且為將清洗液CL朝向研磨墊51供給的噴嘴，其吐出形狀為狹縫(slit)狀。In the polishing equipment 5, after performing polishing processing on the back surface WR of the wafer W, the cleaning liquid CL (pure in the first embodiment) from the cleaning liquid supply source 19 for removing the polishing liquid GL from the polishing pad 51 is supplied from the nozzle 20 Water) is supplied to the rotating polishing pad 51. As the cleaning liquid CL, any liquid that does not react with the wafer W may be used. When the wafer W is made of silicon, it may be pure water or may contain additives in pure water, as long as it does not substantially interact with the wafer W. Any liquid that reacts with the wafer W can be used. Furthermore, as shown in FIG. 3, the polishing device 5 includes an X-axis moving device 52 that moves the polishing pad 51 together with the main shaft 54 in the X-axis direction orthogonal to the Z-axis direction and parallel to the width direction of the apparatus main body 2. The nozzle 20 is provided adjacent to the work chuck 7 of the polishing position D, and is a nozzle that supplies the cleaning liquid CL toward the polishing pad 51, and its discharge shape is a slit shape.

雖然在實施形態1中，研磨墊51包含有GC等之於形成去疵層G上理想的磨粒，以及二氧化矽等之於研磨加工上理想的磨粒之雙方，但在本發明中，研磨墊51只要包含有GC等之於形成去疵層G上理想的磨粒、及二氧化矽等之於研磨加工上理想的磨粒之至少一種即可。在研磨墊51作為磨粒而僅含有GC等之於形成去疵層G上理想的磨粒的情況下，亦可使其於從研磨液供給源15所供給的研磨液GL中含有二氧化矽等之於研磨加工上理想的磨粒，在研磨墊51作為磨粒而僅含有二氧化矽等之於研磨加工上理想的磨粒的情況下，只要使其在從液體供給源17所供給的液體L中含有GC等之於形成去疵層G上理想的磨粒即可。Although in Embodiment 1, the polishing pad 51 contains both GC and other ideal abrasive grains for forming the defect-removing layer G, and silicon dioxide and other ideal abrasive grains for the polishing process, in the present invention, The polishing pad 51 only needs to include at least one of GC, etc., which is ideal for forming the defect-removing layer G, and silicon dioxide, etc., which is ideal for the polishing process. In the case where the polishing pad 51 contains only GC or the like as abrasive grains that are ideal for forming the defect-removing layer G, the polishing pad 51 may be made to contain silicon dioxide in the polishing liquid GL supplied from the polishing liquid supply source 15 If the polishing pad 51 contains only silicon dioxide and other abrasive grains that are ideal for polishing, if the polishing pad 51 contains only silicon dioxide and other abrasive grains that are ideal for polishing, it is only necessary to make it in the range supplied from the liquid supply source 17. The liquid L may contain GC or the like to form ideal abrasive grains on the defect-removing layer G.

又，雖然在實施形態1中，從清洗液供給源19供給之清洗液CL為純水，但在本發明中，亦可為混合有純水與高壓氣體的雙流體。In addition, although the cleaning liquid CL supplied from the cleaning liquid supply source 19 is pure water in Embodiment 1, in the present invention, it may be a two-fluid in which pure water and high-pressure gas are mixed.

轉台6是設置於裝置本體2的上表面之圓盤狀的平台，被設置為可在水平面內旋轉並可用規定的時序旋轉驅動。在此轉台6上是將例如4個工作夾台7以例如90度的相位角等間隔地配設。此等4個工作夾台7是將晶圓W可旋轉地保持的工作夾台，也是在保持面7a上具備有真空夾頭的工作夾台構造之工作夾台，並將載置於保持面7a上的晶圓W真空吸附並保持。此等工作夾台7是在磨削加工時以及研磨加工時，將和鉛直方向平行的軸設為旋轉軸，並藉由旋轉驅動機構而在水平面內被旋轉驅動。像這樣，工作夾台7具有可旋轉地保持作為被加工物的晶圓W的保持面7a。這樣的工作夾台7是藉由轉台6的旋轉，而依序地移動至搬入搬出位置A、粗磨削位置B、精磨削位置C、研磨位置D、搬入搬出位置A。The turntable 6 is a disc-shaped platform provided on the upper surface of the device body 2 and is set to be rotatable in a horizontal plane and to be driven by a predetermined time sequence. On the turntable 6, for example, four work clamping tables 7 are arranged at equal intervals at a phase angle of, for example, 90 degrees. These four work chucks 7 are work chucks that rotatably hold the wafer W, and are also work chucks with a work chuck structure having a vacuum chuck on the holding surface 7a, and are placed on the holding surface The wafer W on 7a is vacuum sucked and held. These work chuck tables 7 set an axis parallel to the vertical direction as a rotation axis during grinding and grinding, and are driven to rotate in a horizontal plane by a rotation drive mechanism. In this manner, the work chuck table 7 has a holding surface 7a that rotatably holds the wafer W as a workpiece. Such a work chuck table 7 is sequentially moved to the loading/unloading position A, the rough grinding position B, the finishing grinding position C, the grinding position D, and the loading/unloading position A by the rotation of the turntable 6.

片匣8，9是具有複數個狹槽之用於收容晶圓W的收容器。其中一邊的片匣8是收容在磨削研磨加工前的正面WS上貼附有保護構件即BG(背面研磨(Back Grind))膠帶T(示於圖5)的晶圓W，另一邊的片匣9是收容磨削研磨加工後的晶圓W。又，對位設備10是將從片匣8取出的晶圓W暫時放置，並進行其中心對位用的平台。The cassettes 8 and 9 are containers for storing wafers W having a plurality of slots. The cassette 8 on one side is stored in the wafer W on the front WS before the grinding and polishing process, and the protective member, namely, the BG (Back Grind) tape T (shown in FIG. 5) is attached, and the wafer on the other side is The cassette 9 stores the wafer W after the grinding and polishing process. In addition, the alignment equipment 10 is a platform for temporarily placing the wafer W taken out from the cassette 8 and performing center alignment.

搬入設備11具有吸附墊，可將已用對位設備10對位的磨削研磨加工前的晶圓W吸附保持並搬入到位於搬入搬出位置A的工作夾台7上。搬入設備11會將保持於位於搬入搬出位置A的工作夾台7上的磨削研磨加工後的晶圓W吸附保持並搬出至洗淨設備13。The loading equipment 11 has a suction pad, and the wafer W before the grinding and polishing process that has been aligned by the positioning equipment 10 can be suctioned and held and loaded onto the work chuck table 7 at the loading and unloading position A. The carry-in equipment 11 sucks and holds the wafer W after the grinding and polishing process held on the work chuck 7 located at the carry-in and carry-out position A and carries it out to the cleaning equipment 13.

搬出入設備14是例如具備U字型墊14a的機器人拾取器，且是藉由U字型墊14a將晶圓W吸附保持並搬送。具體而言，搬出入設備14是將磨削研磨加工前的晶圓W從片匣8搬出至對位設備10，並且將磨削研磨加工後的晶圓W從洗淨設備13搬入到片匣9。洗淨設備13是將磨削研磨加工後的晶圓W洗淨，並去除附著於已磨削及已研磨的加工面上的磨削屑及研磨屑等的污染物。The carry-out equipment 14 is, for example, a robot picker equipped with a U-shaped pad 14a, and the U-shaped pad 14a sucks and holds the wafer W and transports it. Specifically, the loading and unloading facility 14 transports the wafer W before the grinding and polishing process from the cassette 8 to the alignment equipment 10, and the wafer W after the grinding and polishing process is transported from the cleaning equipment 13 to the cassette. 9. The cleaning equipment 13 cleans the wafer W after the grinding and polishing process, and removes contaminants such as grinding debris and polishing debris adhering to the ground and the processed surface that has been polished.

控制設備100是分別控制構成磨削研磨裝置1之上述的構成要素之設備。亦即，控制設備100是使磨削研磨裝置1執行對晶圓W的加工動作的設備，且是至少控制研磨設備5與工作夾台7，以一邊供給研磨液GL一邊研磨晶圓W，接著一邊供給未含有磨粒之液體L一邊形成去疵層G的設備。控制設備100是可執行電腦程式的電腦。控制設備100含有：具有如CPU(中央處理單元(central processing unit))的微處理器的運算處理裝置、具有如ROM(唯讀記憶體(read only memory))或RAM(隨機存取記憶體(random access memory))之記憶體的儲存裝置、以及輸入輸出介面裝置。控制設備100的CPU是在RAM上執行儲存於ROM的電腦程式，並生成用於控制磨削研磨裝置1的控制訊號。控制設備100的CPU是將已生成的控制訊號經由輸入輸出介面裝置輸出到磨削研磨裝置1的各構成要素。又，控制設備100是與顯示加工動作的狀態或圖像等的液晶顯示裝置等所構成的未圖示的顯示設備、或操作員登錄加工内容資訊等時所使用的輸入設備連接。輸入設備是由設置於顯示設備的觸控面板、鍵盤等之中的至少一種所構成。The control device 100 is a device for respectively controlling the above-mentioned constituent elements constituting the grinding and polishing apparatus 1. That is, the control device 100 is a device that causes the grinding and polishing apparatus 1 to perform processing operations on the wafer W, and controls at least the polishing device 5 and the work clamp table 7 to polish the wafer W while supplying the polishing liquid GL, and then It is an equipment for forming the defect-removing layer G while supplying the liquid L that does not contain abrasive grains. The control device 100 is a computer that can execute a computer program. The control device 100 includes: an arithmetic processing device with a microprocessor such as a CPU (central processing unit), a processing device with a microprocessor such as a ROM (read only memory) or a RAM (random access memory ( random access memory)) memory storage devices and input and output interface devices. The CPU of the control device 100 executes a computer program stored in the ROM on the RAM, and generates a control signal for controlling the grinding and polishing device 1. The CPU of the control device 100 outputs the generated control signals to the various components of the grinding and polishing apparatus 1 via the input/output interface device. In addition, the control device 100 is connected to a display device (not shown) constituted by a liquid crystal display device or the like that displays the state of the processing operation, images, or the like, or an input device used by the operator to register processing content information and the like. The input device is composed of at least one of a touch panel, a keyboard, etc., provided in the display device.

接著，說明實施形態1之晶圓的加工方法。圖4是顯示實施形態1之晶圓的加工方法的流程之流程圖。圖5是實施形態1之晶圓的加工方法的晶圓保持步驟之於正面貼附有BG膠帶的晶圓的截面圖。圖6是顯示實施形態1之晶圓的加工方法的應變層去除步驟之圖。圖7是顯示實施形態1之晶圓的加工方法的研磨液去除步驟之圖。圖8是顯示實施形態1之晶圓的加工方法的去疵(gettering)層形成步驟之圖。圖9是顯示實施形態1之晶圓的加工方法的單片化步驟之圖。Next, the wafer processing method of Embodiment 1 will be described. 4 is a flowchart showing the flow of the wafer processing method of the first embodiment. 5 is a cross-sectional view of a wafer with BG tape attached to the front surface in the wafer holding step of the wafer processing method of the first embodiment. Fig. 6 is a diagram showing a strained layer removal step in the wafer processing method of the first embodiment. Fig. 7 is a diagram showing a polishing liquid removal step in the wafer processing method of the first embodiment. FIG. 8 is a diagram showing a step of forming a gettering layer in the wafer processing method of Embodiment 1. FIG. Fig. 9 is a diagram showing the singulation step of the wafer processing method of the first embodiment.

如圖4所示，晶圓的加工方法(以下簡稱為加工方法)包含晶圓保持步驟ST1、粗磨削步驟ST2、精磨削步驟ST3、應變層去除步驟ST4、研磨液去除步驟ST5、去疵層形成步驟ST6以及單片化步驟ST7。As shown in FIG. 4, the wafer processing method (hereinafter referred to as the processing method) includes a wafer holding step ST1, a rough grinding step ST2, a fine grinding step ST3, a strain layer removal step ST4, a polishing liquid removal step ST5, and a Defect layer formation step ST6 and singulation step ST7.

晶圓保持步驟ST1是將BG膠帶T貼附於晶圓W的正面WS，且將BG膠帶T側吸引保持於工作夾台7的保持面7a之步驟。在晶圓保持步驟ST1中，操作員是如圖5所示地將BG膠帶T貼附於磨削研磨加工前的晶圓W的正面WS，且將BG膠帶T朝下來將晶圓W收容於片匣8内。操作員會將收容有磨削研磨加工前的晶圓W的片匣8、及未收容有晶圓W的片匣9安裝於裝置本體2，且將加工資訊登錄到控制設備100。操作員可於磨削研磨裝置1輸入加工動作的開始指示，以令控制設備100開始進行磨削研磨裝置1的加工動作。The wafer holding step ST1 is a step of attaching the BG tape T to the front surface WS of the wafer W, and sucking and holding the BG tape T side on the holding surface 7 a of the work chuck 7. In the wafer holding step ST1, the operator attaches the BG tape T to the front surface WS of the wafer W before the grinding and polishing process as shown in FIG. Inside the cassette 8. The operator installs the cassette 8 containing the wafer W before the grinding and polishing process and the cassette 9 not containing the wafer W on the apparatus main body 2 and registers the processing information to the control device 100. The operator can input the start instruction of the processing operation in the grinding and polishing device 1 to make the control device 100 start the processing operation of the grinding and polishing device 1.

在晶圓保持步驟ST1中，磨削研磨裝置1的控制設備100是令搬出入設備14從片匣8取出晶圓W，並搬出至對位設備10，令對位設備10進行晶圓W的中心對位，且令搬入設備11將已對位的晶圓W的正面WS側搬入位於搬入搬出位置A的工作夾台7上，令工作夾台7吸引保持晶圓W。如此進行，以在晶圓保持步驟ST1中以工作夾台7吸引保持BG膠帶T，藉此使晶圓W的背面WR露出。磨削研磨裝置1的控制設備100是以轉台6將晶圓W依序搬送至粗磨削位置B、精磨削位置C、研磨位置D及搬入搬出位置A。再者，磨削研磨裝置1的控制設備100可在轉台6每旋轉90度時，將磨削研磨加工前的晶圓W搬入到搬入搬出位置A的工作夾台7。In the wafer holding step ST1, the control device 100 of the grinding and polishing apparatus 1 causes the loading and unloading device 14 to take out the wafer W from the cassette 8 and carry it out to the alignment device 10, so that the alignment device 10 performs the wafer W operation. The center is aligned, and the loading equipment 11 is caused to transfer the front WS side of the aligned wafer W onto the work chuck table 7 at the loading and unloading position A, and the work chuck table 7 is caused to attract and hold the wafer W. In this way, the BG tape T is sucked and held by the work chuck 7 in the wafer holding step ST1, thereby exposing the back surface WR of the wafer W. The control device 100 of the grinding and polishing apparatus 1 uses the turntable 6 to sequentially transport the wafer W to the rough grinding position B, the fine grinding position C, the polishing position D, and the carry-in/out position A. Furthermore, the control device 100 of the grinding and polishing apparatus 1 can carry the wafer W before the grinding and polishing process into the work chuck table 7 at the carry-in and carry-out position A every time the turntable 6 rotates 90 degrees.

在粗磨削步驟ST2中，磨削研磨裝置1的控制設備100是在粗磨削位置B上使用第1磨削設備3來對晶圓W的背面WR進行粗磨削加工，而在精磨削步驟ST3中，是在精磨削位置C上使用第2磨削設備4來對晶圓W的背面WR進行精磨削加工。In the rough grinding step ST2, the control device 100 of the grinding and polishing device 1 uses the first grinding device 3 at the rough grinding position B to perform rough grinding on the back surface WR of the wafer W, and in the fine grinding In the grinding step ST3, the second grinding device 4 is used at the finish grinding position C to finish grinding the back surface WR of the wafer W.

應變層去除步驟ST4是在對研磨墊51供給研磨液GL時旋轉研磨墊51，並且一邊使工作夾台7旋轉一邊以研磨墊51研磨晶圓W的背面WR，藉此從晶圓W的背面WR去除應變層的步驟。在應變層去除步驟ST4中，磨削研磨裝置1的控制設備100是使工作夾台7及研磨墊51在研磨位置D上旋轉，並且如圖6所示地一邊透過切換閥12將來自研磨液供給源15的研磨液GL從噴嘴16供給至晶圓W的背面WR，一邊使研磨墊51抵接於晶圓W的背面WR，來對晶圓W的背面WR進行研磨加工。再者，在實施形態1中，雖然在應變層去除步驟ST4中，磨削研磨裝置1的控制設備100是使工作夾台7以505rpm的旋轉數旋轉，且使研磨墊51以500rpm的旋轉數朝向與工作夾台7相同的方向旋轉，並且於研磨進給設備53使研磨墊51按壓成將300g/cm2 的研磨壓力作用於晶圓W的背面WR，但研磨加工的加工條件並不限定於此。In the strain layer removal step ST4, the polishing pad 51 is rotated when the polishing liquid GL is supplied to the polishing pad 51, and the back surface WR of the wafer W is polished with the polishing pad 51 while rotating the work chuck 7, thereby removing the back surface WR from the wafer W. WR steps to remove the strained layer. In the strain layer removal step ST4, the control device 100 of the grinding and polishing apparatus 1 rotates the work clamp 7 and the polishing pad 51 at the polishing position D, and as shown in FIG. The polishing liquid GL of the supply source 15 is supplied from the nozzle 16 to the back surface WR of the wafer W, while the polishing pad 51 is brought into contact with the back surface WR of the wafer W, and the back surface WR of the wafer W is polished. Furthermore, in the first embodiment, although in the strained layer removal step ST4, the control device 100 of the grinding and polishing apparatus 1 rotates the work chuck 7 at a rotation speed of 505 rpm, and causes the polishing pad 51 to rotate at a rotation speed of 500 rpm. Rotate in the same direction as the work chuck table 7, and press the polishing pad 51 in the polishing feed device 53 to apply a polishing pressure of 300 g/cm 2 to the back surface WR of the wafer W, but the polishing processing conditions are not limited Here.

研磨液去除步驟ST5是在應變層去除步驟ST4實施後，從噴嘴20朝向研磨墊51供給清洗液CL，來將研磨墊51所含的殘存研磨液GL去除之步驟。在研磨液去除步驟ST5中，磨削研磨裝置1的控制設備100是在研磨位置D上使工作夾台7及研磨墊51旋轉，並且如圖7所示地將從清洗液供給源19所供給的清洗液CL，從噴嘴20供給到研磨墊51之從晶圓W的背面WR超出的部分，並且一邊透過切換閥12將由液體供給源17所供給之液體L從噴嘴16供給至晶圓W的背面WR，一邊使研磨墊51抵接於晶圓W的背面WR。The polishing liquid removal step ST5 is a step in which the cleaning liquid CL is supplied from the nozzle 20 toward the polishing pad 51 after the strained layer removal step ST4 is performed to remove the remaining polishing liquid GL contained in the polishing pad 51. In the polishing liquid removal step ST5, the control device 100 of the grinding and polishing apparatus 1 rotates the work clamp table 7 and the polishing pad 51 at the polishing position D, and supplies it from the cleaning liquid supply source 19 as shown in FIG. The cleaning liquid CL is supplied from the nozzle 20 to the portion of the polishing pad 51 protruding from the back surface WR of the wafer W, and the liquid L supplied from the liquid supply source 17 is supplied from the nozzle 16 to the wafer W through the switching valve 12 On the back surface WR, the polishing pad 51 is brought into contact with the back surface WR of the wafer W.

去疵層形成步驟ST6是一邊在將未含有磨粒之液體L供給至研磨墊51及晶圓W時旋轉研磨墊51並且使工作夾台7旋轉，一邊藉由研磨墊51對晶圓W的背面WR進行研磨，藉此於背面WR形成去疵層G的步驟。Defect layer forming step ST6 is to rotate the polishing pad 51 and rotate the work chuck 7 when the liquid L containing no abrasive grains is supplied to the polishing pad 51 and the wafer W, while the polishing pad 51 applies the polishing pad 51 to the wafer W. The step of polishing the back surface WR to form the defect-removing layer G on the back surface WR.

在去疵層形成步驟ST6中磨削研磨裝置1的控制設備100是使工作夾台7及研磨墊51在研磨位置D上旋轉，並且如圖8所示地一邊透過切換閥12將從液體供給源17所供給的未含有磨粒之液體L從噴嘴16供給至晶圓W的背面WR，並且將從清洗液供給源19所供給的清洗液CL從噴嘴20供給至研磨墊51之從晶圓W的背面WR超出的部分，一邊將研磨墊51抵接於晶圓W的背面WR，以於晶圓W的背面WR側生成去疵層G。已實施去疵層形成步驟ST6後的晶圓W的背面WR的算術平均粗糙度(Ra)為0.8~4.5nm。In the step ST6 of forming the defect-removing layer, the control device 100 of the grinding and polishing apparatus 1 rotates the work clamp 7 and the polishing pad 51 at the polishing position D, and supplies the liquid through the switching valve 12 as shown in FIG. The liquid L without abrasive grains supplied from the source 17 is supplied from the nozzle 16 to the back surface WR of the wafer W, and the cleaning liquid CL supplied from the cleaning liquid supply source 19 is supplied from the nozzle 20 to the polishing pad 51 from the wafer In the part where the back surface WR of the W extends, the polishing pad 51 is abutted against the back surface WR of the wafer W to form a defect-removing layer G on the back surface WR side of the wafer W. The arithmetic average roughness (Ra) of the back surface WR of the wafer W after the defect removal layer forming step ST6 has been performed is 0.8 to 4.5 nm.

像這樣，控制設備100是將磨削研磨裝置1控制成：藉由在研磨液去除步驟ST5及去疵層形成步驟ST6中供給清洗液CL，以在研磨晶圓W後轉移到去疵層G之形成時，從噴嘴20朝向研磨墊51供給清洗液CL來去除殘存於研磨墊51的研磨液GL。再者，於實施形態1中，雖然在去疵層形成步驟ST6中，磨削研磨裝置1的控制設備100是令工作夾台7以505rpm的旋轉數旋轉，且使研磨墊51以500rpm的旋轉數朝與工作夾台7相同的方向旋轉，並且在研磨進給設備53中按壓研磨墊51以使50g/cm2 的研磨壓力作用於晶圓W的背面WR，但用於形成去疵層G的加工條件並不限定於此。In this way, the control device 100 controls the grinding and polishing apparatus 1 to transfer the cleaning liquid CL to the removal layer G after polishing the wafer W by supplying the cleaning liquid CL in the polishing liquid removing step ST5 and the removing defect layer forming step ST6. In the formation, the cleaning liquid CL is supplied from the nozzle 20 toward the polishing pad 51 to remove the polishing liquid GL remaining in the polishing pad 51. Furthermore, in the first embodiment, although the control device 100 of the grinding and polishing apparatus 1 rotates the work chuck 7 at a rotation speed of 505 rpm and rotates the polishing pad 51 at 500 rpm in the step ST6 of forming the defect-removing layer The number is rotated in the same direction as the work chuck table 7, and the polishing pad 51 is pressed in the polishing feed device 53 so that a polishing pressure of 50 g/cm 2 is applied to the back surface WR of the wafer W, but it is used to form the defect removal layer G The processing conditions are not limited to this.

在實施形態1中，雖然研磨液去除步驟ST5是將液體L供給至晶圓W的背面WR，但在本發明中亦可不供給液體L。又，在實施形態1中晶圓W的外徑為300mm，研磨墊51的外徑為450mm。在應變層去除步驟ST4及去疵層形成步驟ST6中，是將研磨墊51定位成研磨墊51的外周覆蓋晶圓W的中心，且從晶圓W的外緣超出。In Embodiment 1, although the polishing liquid removal step ST5 supplies the liquid L to the back surface WR of the wafer W, the liquid L may not be supplied in the present invention. In addition, in the first embodiment, the outer diameter of the wafer W is 300 mm, and the outer diameter of the polishing pad 51 is 450 mm. In the strained layer removal step ST4 and the defect removal layer formation step ST6, the polishing pad 51 is positioned such that the outer periphery of the polishing pad 51 covers the center of the wafer W and extends beyond the outer edge of the wafer W.

磨削研磨裝置1的控制設備100是在去疵層形成步驟ST6後，將已實施去疵層形成步驟ST6的晶圓W定位到搬入搬出位置A，再藉由搬入設備11搬入到洗淨設備13，而以洗淨設備13洗淨，並將洗淨後的晶圓W以搬出入設備14搬入到片匣9。The control device 100 of the grinding and polishing apparatus 1 positions the wafer W that has been subjected to the defect removal layer formation step ST6 to the loading and unloading position A after the defect removal layer formation step ST6, and then moves it into the cleaning facility by the loading equipment 11 13, and the cleaning equipment 13 is used to clean, and the cleaned wafer W is carried into the cassette 9 through the carry-out equipment 14.

在單片化步驟ST7中，是將晶圓W從片匣9内取出，並從正面WS將BG膠帶T剝離之後，在晶圓W的正面WS形成由含有聚乙烯醇(polyvinyl alcohol：PVA)或聚乙烯吡咯烷酮(polyvinyl pyrrolidone：PVP)等的水溶性樹脂所構成之圖未示的保護膜，且將晶圓W的背面WR側保持於圖9所示雷射加工機30的工作夾台33上。如圖9所示，單片化步驟ST7是一邊使雷射加工機30的雷射光照射單元32沿著切割道S相對地移動一邊從雷射光照射單元32將雷射光LR照射於切割道S，來對切割道S施行燒蝕加工，以將晶圓W沿著切割道S單片化成一個個的元件晶片DT。單片化步驟ST7是在將晶圓W單片化成一個個的元件晶片DT後，將圖未示的保護膜去除，而對晶圓W的正面WS進行洗淨，以將保護膜洗淨並與碎屑一起去除。再者，雖然在實施形態1中晶圓W是將背面WR直接吸引保持於工作夾台33上，但在本發明中亦可將背面WR貼附於已固定於圖未示的環狀框架的内周的切割膠帶，並隔著切割膠帶來吸引保持於工作夾台33上。In the singulation step ST7, the wafer W is taken out of the cassette 9 and the BG tape T is peeled off from the front WS, and the front WS of the wafer W is formed with polyvinyl alcohol (PVA) Or polyvinyl pyrrolidone (PVP) and other water-soluble resin is composed of a protective film not shown, and the back WR side of the wafer W is held on the work clamp 33 of the laser processing machine 30 shown in FIG. 9 on. As shown in FIG. 9, the singulation step ST7 is to irradiate the laser light LR from the laser light irradiating unit 32 to the dicing line S while relatively moving the laser light irradiation unit 32 of the laser processing machine 30 along the dicing line S. The ablation process is performed on the dicing lane S to singulate the wafer W into individual element wafers DT along the dicing lane S. In the singulation step ST7, after the wafer W is singulated into individual element wafers DT, the protective film not shown in the figure is removed, and the front side WS of the wafer W is cleaned to clean the protective film and Remove together with debris. Furthermore, although in the first embodiment, the back surface WR of the wafer W is directly sucked and held on the work chuck 33, in the present invention, the back surface WR may be attached to a ring frame which is not shown in the figure. The dicing tape on the inner periphery is sucked and held on the work clamp table 33 via the dicing tape.

雖然在實施形態1中，單片化步驟ST7是藉由使用了雷射光LR的燒蝕加工來將晶圓W單片化成一個個的元件晶片DT，但在本發明中，單片化步驟ST7亦可照射雷射光而在晶圓W的内部形成改質層來將晶圓W單片化成一個個的元件晶片DT、亦可在藉由使用了雷射光LR的燒蝕加工將晶圓W單片化成一個個的元件晶片DT的情況下，藉由燒蝕加工進行半切後，施加外力來單片化成一個個的元件晶片DT。亦可藉由使用了切削刀片的切削加工來將晶圓W單片化成一個個的元件晶片DT。Although in Embodiment 1, the singulation step ST7 singulates the wafer W into individual element wafers DT by ablation processing using laser light LR, in the present invention, the singulation step ST7 It is also possible to irradiate laser light to form a modified layer inside the wafer W to singulate the wafer W into individual element wafers DT, or to separate wafer W through ablation processing using laser light LR. In the case of chipping into individual device wafers DT, after half-cutting by ablation processing, external force is applied to chip into individual device wafers DT. It is also possible to singulate the wafer W into individual element wafers DT by cutting processing using a cutting blade.

如以上，由於實施形態1的加工方法是在實施應變層去除步驟ST4後，實施將清洗液CL從噴嘴20朝向研磨墊51供給之研磨液去除步驟ST5，所以在去疵層形成步驟ST6中可以有效率地去除殘留於研磨墊51的研磨液GL，因此能夠抑制由研磨液GL形成之晶圓W的背面WR的過度的侵蝕，並且可以快速地轉移至去疵層G的形成。As described above, since the processing method of the first embodiment is performed after the strained layer removal step ST4, the polishing liquid removal step ST5 in which the cleaning liquid CL is supplied from the nozzle 20 toward the polishing pad 51 is performed, so the defect removal layer formation step ST6 can be performed The polishing liquid GL remaining on the polishing pad 51 is efficiently removed, so that excessive erosion of the back surface WR of the wafer W formed by the polishing liquid GL can be suppressed, and it can be quickly transferred to the formation of the defect removal layer G.

[實施形態2] 依據圖式來說明本發明之實施形態2的晶圓的加工方法。圖10是顯示實施形態2之晶圓的加工方法的應變層去除步驟之圖。圖11是顯示實施形態2之晶圓的加工方法的研磨液去除步驟之圖。圖12是顯示實施形態2之晶圓的加工方法的去疵(gettering)層形成步驟之圖。圖10至圖12，會對與實施形態1相同的部分附加相同的符號而省略說明。[Embodiment 2] The wafer processing method of Embodiment 2 of the present invention will be described based on the drawings. Fig. 10 is a diagram showing a strained layer removal step in the wafer processing method of the second embodiment. Fig. 11 is a diagram showing a polishing liquid removal step in the wafer processing method of the second embodiment. FIG. 12 is a diagram showing a step of forming a gettering layer in the wafer processing method of the second embodiment. In FIGS. 10 to 12, the same reference numerals are given to the same parts as in the first embodiment, and the description thereof will be omitted.

實施形態2之晶圓的加工方法(以下簡稱為加工方法)除了實施應變層去除步驟ST4、研磨液去除步驟ST5及去疵層形成步驟ST6的研磨設備5的構成與實施形態1相異以外，與實施形態1是相同的。The wafer processing method of the second embodiment (hereinafter referred to as the processing method) is different from that of the first embodiment except that the structure of the polishing equipment 5 that implements the strained layer removal step ST4, the polishing liquid removal step ST5, and the defect removal layer forming step ST6 is different from that of the first embodiment. It is the same as the first embodiment.

實施形態2之加工方法，是使實施應變層去除步驟ST4、研磨液去除步驟ST5及去疵層形成步驟ST6的研磨設備5，如圖10、圖11及圖12所示地於中心設置有供給通路18，該供給通路18是將來自研磨液供給源15的研磨液GL或來自液體供給源17的液體L供給至研磨墊51之抵接於晶圓W的背面WR之研磨面的中央。又，在實施形態2之加工方法中，晶圓W的外徑為300mm，研磨墊51的外徑為300mm以上即可，在此例中為450mm。在應變層去除步驟ST4及研磨液去除步驟ST5中，將研磨墊51定位成以研磨墊51的整體覆蓋晶圓W的背面WR整體。The processing method of the second embodiment is to implement the strained layer removal step ST4, the polishing liquid removal step ST5, and the defect-removing layer forming step ST6. The polishing equipment 5 is provided in the center as shown in FIG. 10, FIG. 11, and FIG. The channel 18 supplies the polishing liquid GL from the polishing liquid supply source 15 or the liquid L from the liquid supply source 17 to the center of the polishing surface of the polishing pad 51 that abuts the back surface WR of the wafer W. Furthermore, in the processing method of the second embodiment, the outer diameter of the wafer W is 300 mm, and the outer diameter of the polishing pad 51 may be 300 mm or more, and in this example, it is 450 mm. In the strained layer removal step ST4 and the polishing liquid removal step ST5, the polishing pad 51 is positioned so that the entire back surface WR of the wafer W is covered with the entire polishing pad 51.

又，在實施形態2的加工方法中，去疵層形成步驟ST6是涵蓋如圖12所示地研磨墊51的外緣部從晶圓W的外緣超出的位置、及如圖11所示地以研磨墊51的整體覆蓋晶圓W的背面WR整體的位置，來一邊使工作夾台7相對於研磨墊51水平移動一邊進行。在實施形態2中，於去疵層形成步驟ST6中，是磨削研磨裝置1的控制設備100於X軸移動設備52中使研磨墊51與主軸54一起在水平方向即X軸方向上移動，並使工作夾台7相對於研磨墊51水平移動。In addition, in the processing method of the second embodiment, the defect-removing layer forming step ST6 covers the position where the outer edge portion of the polishing pad 51 protrudes from the outer edge of the wafer W as shown in FIG. 12, and as shown in FIG. With the position where the entire polishing pad 51 covers the entire back surface WR of the wafer W, the work chuck 7 is moved horizontally with respect to the polishing pad 51. In the second embodiment, in the defect-removing layer forming step ST6, the control device 100 of the grinding and polishing apparatus 1 moves the polishing pad 51 together with the spindle 54 in the horizontal direction, that is, in the X-axis direction in the X-axis moving device 52. And the work clamp table 7 is moved horizontally with respect to the polishing pad 51.

實施形態2之加工方法是與實施形態1同樣，由於在應變層去除步驟ST4的實施後，實施從噴嘴20朝向研磨墊51供給清洗液CL之研磨液去除步驟ST5，所以能夠在去疵層形成步驟ST6中，抑制殘留於研磨墊51的研磨液GL，因此能夠抑制由研磨液GL形成之晶圓W的背面WR的過度的侵蝕，並且能夠快速地形成去疵層G。其結果，實施形態1之加工方法能夠在研磨後快速地轉移至去疵層G的形成，並能夠形成按照設計的去疵層G，且能夠加工成按照設計的晶圓W。The processing method of the second embodiment is the same as that of the first embodiment. After the strained layer removal step ST4 is performed, the polishing liquid removal step ST5 in which the cleaning liquid CL is supplied from the nozzle 20 to the polishing pad 51 is performed, so that the defect removal layer can be formed In step ST6, the polishing liquid GL remaining on the polishing pad 51 is suppressed. Therefore, excessive erosion of the back surface WR of the wafer W formed by the polishing liquid GL can be suppressed, and the defect removal layer G can be formed quickly. As a result, the processing method of Embodiment 1 can quickly transfer to the formation of the defect removal layer G after polishing, can form the defect removal layer G according to the design, and can process the wafer W according to the design.

[變形例] 依據圖式來說明本發明之實施形態2之變形例1的晶圓的加工方法。圖13是顯示實施形態2之變形例1的晶圓的加工方法的研磨液去除步驟之圖。圖13會對與實施形態2相同的部分附加相同的符號而省略說明。[Modifications] The wafer processing method of Modification 1 of Embodiment 2 of the present invention will be described based on the drawings. FIG. 13 is a diagram showing a polishing liquid removal step in a wafer processing method of Modification 1 of Embodiment 2. FIG. In FIG. 13, the same reference numerals are attached to the same parts as in the second embodiment, and the description thereof will be omitted.

關於實施形態2的變形例1之晶圓的加工方法(以下簡稱為加工方法)，是在研磨液去除步驟ST5中，如圖13所示，除了通過供給通路18使吸引源40的吸引力作用於研磨墊51，來吸引研磨墊51的殘存研磨液GL以外，與實施形態2是相同的。Regarding the wafer processing method of Modification 1 of Embodiment 2 (hereinafter referred to as the processing method), in the polishing liquid removal step ST5, as shown in FIG. 13, except for the suction force of the suction source 40 through the supply path 18 The polishing pad 51 is the same as the second embodiment except that the remaining polishing liquid GL of the polishing pad 51 is sucked.

實施形態2的變形例1之加工方法與實施形態2同樣，由於是在實施應變層去除步驟ST4後，實施從噴嘴20將清洗液CL朝向研磨墊51供給之研磨液去除步驟ST5，所以能夠在研磨後快速地轉移至去疵層G的形成，並能夠形成按照設計的去疵層G，且能夠加工成按照設計的晶圓W。The processing method of Modification 1 of the second embodiment is the same as that of the second embodiment. Since the strain layer removal step ST4 is performed, the polishing liquid removal step ST5 in which the cleaning fluid CL is supplied from the nozzle 20 toward the polishing pad 51 is performed. After grinding, it is quickly transferred to the formation of the defect-removing layer G, and the defect-removing layer G according to the design can be formed, and it can be processed into the wafer W according to the design.

又，作為圖13的構成之進一步的變形例2，亦可構成為：設置連通於供給通路18的旁路，並從液體供給源17供給液體L，且將研磨液GL從旁路壓出，進而從清洗液供給源19將清洗液CL供給至研磨墊51來將研磨液從研磨墊51去除。In addition, as a further modification 2 of the configuration of FIG. 13, it may be configured such that a bypass communicating with the supply passage 18 is provided, the liquid L is supplied from the liquid supply source 17, and the polishing liquid GL is pressed out from the bypass. Furthermore, the cleaning liquid CL is supplied to the polishing pad 51 from the cleaning liquid supply source 19 to remove the polishing liquid from the polishing pad 51.

根據各實施形態，能夠得到以下的元件晶片的製造方法。According to each embodiment, the following method of manufacturing an element wafer can be obtained.

(附記) 一種元件晶片的製造方法，其包含： 應變層去除步驟，一邊在對研磨裝置的研磨墊供給研磨液時旋轉該研磨墊並且使該研磨裝置的工作夾台旋轉，一邊以該研磨墊對已磨削加工後的晶圓的背面進行研磨，藉此從晶圓的背面去除應變層； 研磨液去除步驟，在實施該應變層去除步驟後，從噴嘴將清洗液朝向該研磨墊供給，來將該研磨墊所含的殘存研磨液去除； 去疵層形成步驟，一邊在對該研磨墊及晶圓供給未含有磨粒之液體時旋轉該研磨墊並且使該工作夾台旋轉，一邊以該研磨墊研磨晶圓的背面，藉此在背面形成去疵層；及 單片化步驟，沿著切割道將晶圓單片化成一個個的元件晶片。(Supplement) A method for manufacturing an element wafer, comprising: a strain layer removal step, while rotating the polishing pad and rotating the work chuck of the polishing device while supplying the polishing liquid to the polishing pad of the polishing device, using the polishing pad Polishing the back surface of the wafer after the grinding process, thereby removing the strain layer from the back surface of the wafer; the polishing liquid removal step, after the strain layer removal step is performed, the cleaning liquid is supplied from the nozzle toward the polishing pad, To remove the remaining polishing liquid contained in the polishing pad; the step of forming the defect-free layer is to rotate the polishing pad and rotate the work chuck while supplying the polishing pad and wafer with a liquid that does not contain abrasive grains. The polishing pad grinds the back side of the wafer, thereby forming a defect removal layer on the back side; and the singulation step, singulates the wafer into individual element wafers along the dicing path.

再者，本發明並非是受限於上述實施形態、變形例之發明。亦即，在不脫離本發明的主旨的範圍內可進行各種變形而實施。In addition, this invention is not limited to the invention of the said embodiment and modification. That is, various modifications can be made and implemented without departing from the gist of the present invention.

1‧‧‧磨削研磨裝置(研磨裝置)2‧‧‧裝置本體3‧‧‧第1磨削設備4‧‧‧第2磨削設備5‧‧‧研磨設備6‧‧‧轉台7、33‧‧‧工作夾台7a‧‧‧保持面8、9‧‧‧片匣10‧‧‧對位設備11‧‧‧搬入設備12‧‧‧切換閥13‧‧‧洗淨設備14‧‧‧搬出入設備14a‧‧‧U字型墊15‧‧‧研磨液供給源16‧‧‧噴嘴17‧‧‧液體供給源18‧‧‧供給通路19‧‧‧清洗液供給源20‧‧‧噴嘴30‧‧‧雷射加工機31、41‧‧‧磨削輪32‧‧‧雷射光照射單元40‧‧‧吸引源51‧‧‧研磨墊52‧‧‧X軸移動設備53‧‧‧研磨進給設備54‧‧‧主軸100‧‧‧控制設備A‧‧‧搬入搬出位置B‧‧‧粗磨削位置C‧‧‧精磨削位置CL‧‧‧清洗液D‧‧‧研磨位置DT‧‧‧元件晶片DV‧‧‧元件G‧‧‧去疵層GL‧‧‧研磨液L‧‧‧液體LR‧‧‧雷射光S‧‧‧切割道T‧‧‧BG膠帶W‧‧‧晶圓WR‧‧‧背面WS‧‧‧正面ST1‧‧‧晶圓保持步驟ST2‧‧‧粗磨削步驟ST3‧‧‧精磨削步驟ST4‧‧‧應變層去除步驟ST5‧‧‧研磨液去除步驟ST6‧‧‧去疵層形成步驟ST7‧‧‧單片化步驟1‧‧‧Grinding device (grinding device) 2‧‧‧Device body 3‧‧‧First grinding equipment 4‧‧‧Second grinding equipment 5‧‧‧Grinding equipment 6‧‧‧Turntable 7, 33 ‧‧‧Working clamp table 7a‧‧‧holding surface 8,9‧‧‧cartridge 10‧‧‧aligning equipment 11‧‧‧moving-in equipment 12‧‧‧switching valve 13‧‧‧washing equipment 14‧‧‧ Moving in and out of the equipment 14a‧‧‧U-shaped pad 15‧‧‧Lapping fluid supply source 16‧‧‧Nozzle 17‧‧‧Liquid supply source 18‧‧‧Supply path 19‧‧‧Cleaning fluid supply source 20‧‧‧Nozzle 30‧‧‧Laser processing machine 31, 41‧‧‧Grinding wheel 32‧‧‧Laser light irradiation unit 40‧‧‧Suction source 51‧‧‧Polishing pad 52‧‧‧X-axis moving equipment 53‧‧‧Grinding Feeding equipment 54‧‧‧Spindle 100‧‧‧Control equipment A‧‧‧Move in and out position B‧‧‧Rough grinding position C‧‧‧Fine grinding position CL‧‧‧Cleaning fluid D‧‧‧Grinding position DT ‧‧‧Component chip DV‧‧‧Component G‧‧‧Defective layer GL‧‧‧Lapping fluid L‧‧‧Liquid LR‧‧‧Laser light S‧‧‧Cutting channel T‧‧‧BG tape W‧‧‧ Wafer WR‧‧‧Back WS‧‧Front ST1‧‧‧Wafer holding step ST2‧‧‧Rough grinding step ST3‧‧‧Fine grinding step ST4‧‧‧Strain layer removal step ST5‧‧‧Lapping liquid Removal step ST6‧‧‧Defective layer formation step ST7‧‧‧Singulation step

圖1是顯示實施形態1之晶圓的加工方法之加工對象的晶圓的立體圖。 圖2是顯示在實施形態1之晶圓的加工方法中所使用之磨削研磨裝置的構成之立體圖。 圖3是顯示圖2所示之磨削研磨裝置的研磨設備之構成例的立體圖。 圖4是顯示實施形態1之晶圓的加工方法的流程之流程圖。 圖5是實施形態1之晶圓的加工方法的晶圓保持步驟之於正面貼附有BG膠帶的晶圓的截面圖。 圖6是顯示實施形態1之晶圓的加工方法的應變層去除步驟之圖。 圖7是顯示實施形態1之晶圓的加工方法的研磨液去除步驟之圖。 圖8是顯示實施形態1之晶圓的加工方法的去疵(gettering)層形成步驟之圖。 圖9是顯示實施形態1之晶圓的加工方法的單片化步驟之圖。 圖10是顯示實施形態2之晶圓的加工方法的應變層去除步驟之圖。 圖11是顯示實施形態2之晶圓的加工方法的研磨液去除步驟之圖。 圖12是顯示實施形態2之晶圓的加工方法的去疵層形成步驟之圖。 圖13是顯示實施形態2之變形例1的晶圓的加工方法的研磨液去除步驟之圖。FIG. 1 is a perspective view showing a wafer to be processed in the wafer processing method of the first embodiment. 2 is a perspective view showing the structure of a grinding and polishing apparatus used in the wafer processing method of the first embodiment. Fig. 3 is a perspective view showing a configuration example of a polishing device of the grinding and polishing device shown in Fig. 2. 4 is a flowchart showing the flow of the wafer processing method of the first embodiment. 5 is a cross-sectional view of a wafer with BG tape attached to the front surface in the wafer holding step of the wafer processing method of the first embodiment. Fig. 6 is a diagram showing a strained layer removal step in the wafer processing method of the first embodiment. Fig. 7 is a diagram showing a polishing liquid removal step in the wafer processing method of the first embodiment. FIG. 8 is a diagram showing a step of forming a gettering layer in the wafer processing method of Embodiment 1. FIG. Fig. 9 is a diagram showing the singulation step of the wafer processing method of the first embodiment. Fig. 10 is a diagram showing a strained layer removal step in the wafer processing method of the second embodiment. Fig. 11 is a diagram showing a polishing liquid removal step in the wafer processing method of the second embodiment. FIG. 12 is a diagram showing a step of forming a defect removal layer in a wafer processing method of Embodiment 2. FIG. FIG. 13 is a diagram showing a polishing liquid removal step in a wafer processing method of Modification 1 of Embodiment 2. FIG.

ST1‧‧‧晶圓保持步驟 ST1‧‧‧Wafer holding step

ST2‧‧‧粗磨削步驟 ST2‧‧‧Rough grinding steps

ST3‧‧‧精磨削步驟 ST3‧‧‧Fine grinding steps

ST4‧‧‧應變層去除步驟 ST4‧‧‧Strain layer removal step

ST5‧‧‧研磨液去除步驟 ST5‧‧‧Grinding liquid removal step

ST6‧‧‧去疵層形成步驟 ST6‧‧‧Defective layer formation step

ST7‧‧‧單片化步驟 ST7‧‧‧Single-chip steps

Claims (3)

一種晶圓的加工方法，是使用莫氏硬度比晶圓高且具有磨粒的研磨墊，於該晶圓的正面形成有元件的晶圓的背面形成去疵層，該晶圓的加工方法包含：晶圓保持步驟，在晶圓的正面貼附保護構件，且將保護構件側保持於工作夾台的保持面；應變層去除步驟，一邊在對該研磨墊供給研磨液時旋轉該研磨墊並且使該工作夾台旋轉，一邊以該研磨墊研磨晶圓的背面，藉此從晶圓的背面去除應變層；研磨液去除步驟，在實施該應變層去除步驟後，從噴嘴將從清洗液供給源供給的清洗液對該研磨墊供給，並且從噴嘴將從液體供給源供給的未含磨粒之液體對晶圓的背面供給，而將該研磨墊所含有的殘存研磨液去除；及去疵層形成步驟，一邊在對該晶圓的背面將從該液體供給源供給的未含有磨粒之液體從該噴嘴供給，並且對該研磨墊將從該清洗液供給源供給的清洗液從該噴嘴供給時旋轉該研磨墊並且使該工作夾台旋轉，一邊以該研磨墊研磨晶圓的背面，藉此於背面形成去疵層。 A wafer processing method is to use a polishing pad with a higher Mohs hardness than the wafer and with abrasive grains, and form a defect removal layer on the back surface of the wafer with elements formed on the front surface of the wafer. The processing method of the wafer includes : Wafer holding step, attaching a protective member to the front surface of the wafer, and holding the side of the protective member on the holding surface of the work chuck; step of removing the strain layer, rotating the polishing pad while supplying polishing liquid to the polishing pad and The work chuck is rotated to polish the back surface of the wafer with the polishing pad, thereby removing the strain layer from the back surface of the wafer; the polishing liquid removal step, after the strain layer removal step is performed, the cleaning liquid is supplied from the nozzle The cleaning liquid supplied by the source is supplied to the polishing pad, and the liquid without abrasive grains supplied from the liquid supply source is supplied from the nozzle to the back of the wafer to remove the remaining polishing liquid contained in the polishing pad; and In the layer formation step, the liquid without abrasive grains supplied from the liquid supply source is supplied from the nozzle on the back of the wafer, and the cleaning liquid supplied from the cleaning liquid supply source is supplied from the nozzle to the polishing pad. When feeding, the polishing pad is rotated and the work chuck is rotated, while polishing the back surface of the wafer with the polishing pad, thereby forming a defect removal layer on the back surface. 如請求項1之晶圓的加工方法，其中該去疵層形成步驟是一邊使該工作夾台相對於該研磨墊水平移動一邊進行。 The wafer processing method of claim 1, wherein the step of forming the defect removal layer is performed while horizontally moving the work clamp table relative to the polishing pad. 一種研磨裝置，是研磨晶圓的研磨裝置，其具備：工作夾台，可旋轉地保持晶圓； 研磨設備，具有對保持於該工作夾台上的晶圓進行研磨，而在該已研磨的晶圓上形成去疵層的研磨墊；研磨液供給源，對晶圓及該研磨墊供給研磨液；液體供給源，對晶圓及該研磨墊供給不同於研磨液之未含有磨粒的液體；控制設備，至少控制該研磨設備與該工作夾台，並在供給研磨液時研磨晶圓，接著在供給未含有該磨粒的液體時形成去疵層；及噴嘴，相鄰於該工作夾台而設置，且將用於去除研磨液的清洗液朝向該研磨墊供給，該控制設備更控制成：在研磨晶圓後轉移到去疵層形成時，及形成該去疵層時，從該噴嘴朝向該研磨墊來供給清洗液，並且對該晶圓的背面將從該液體供給源供給的該未含有磨粒之液體從噴嘴供給。 A polishing device, which is a polishing device for polishing wafers, is provided with: a work clamp table that rotatably holds the wafer; The polishing equipment has a polishing pad for polishing the wafer held on the work chuck and forming a defect-removing layer on the polished wafer; a polishing liquid supply source for supplying polishing liquid to the wafer and the polishing pad ; Liquid supply source, to supply the wafer and the polishing pad with a liquid that does not contain abrasive particles, which is different from the polishing liquid; control equipment, at least control the polishing equipment and the work clamp table, and polish the wafer when the polishing liquid is supplied, and then When the liquid that does not contain the abrasive grains is supplied, a defect-removing layer is formed; and a nozzle is arranged adjacent to the work clamp table, and the cleaning liquid for removing the polishing liquid is supplied toward the polishing pad, and the control device is further controlled to be : When the wafer is polished and transferred to the formation of the defect-removing layer, and when the defect-removing layer is formed, the cleaning liquid is supplied from the nozzle toward the polishing pad, and the back surface of the wafer is supplied from the liquid supply source. The liquid without abrasive particles is supplied from the nozzle.
TW106130122A 2016-10-03 2017-09-04 Wafer processing method and polishing device TWI727089B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-195906 2016-10-03
JP2016195906A JP6827289B2 (en) 2016-10-03 2016-10-03 Wafer processing method and polishing equipment

Publications (2)

Publication Number Publication Date
TW201814784A TW201814784A (en) 2018-04-16
TWI727089B true TWI727089B (en) 2021-05-11

Family

ID=61803184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106130122A TWI727089B (en) 2016-10-03 2017-09-04 Wafer processing method and polishing device

Country Status (4)

Country Link
JP (1) JP6827289B2 (en)
KR (1) KR102320761B1 (en)
CN (1) CN107891358B (en)
TW (1) TWI727089B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110576386B (en) * 2018-06-26 2021-10-12 蓝思精密(东莞)有限公司 Processing method of fingerprint ring
WO2020054504A1 (en) * 2018-09-13 2020-03-19 東京エレクトロン株式会社 Processing system and processing method
EP3900876B1 (en) * 2020-04-23 2024-05-01 Siltronic AG Method of grinding a semiconductor wafer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344878A (en) * 2005-06-10 2006-12-21 Disco Abrasive Syst Ltd Processing apparatus and processing method
JP2013247132A (en) * 2012-05-23 2013-12-09 Disco Abrasive Syst Ltd Method for processing plate-like object
JP2015046550A (en) * 2013-08-29 2015-03-12 株式会社ディスコ Polishing pad and processing method of wafer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
JPH1190816A (en) * 1997-09-22 1999-04-06 Toshiba Corp Polishing device and polishing method
US6346032B1 (en) * 1999-09-30 2002-02-12 Vlsi Technology, Inc. Fluid dispensing fixed abrasive polishing pad
JP2002141313A (en) * 2000-08-22 2002-05-17 Nikon Corp Cmp device and manufacturing method of semiconductor device
KR100681683B1 (en) * 2001-03-16 2007-02-09 동부일렉트로닉스 주식회사 Wafer surface grinder
JP2002273651A (en) * 2001-03-19 2002-09-25 Fujitsu Ltd Polishing method and polishing device
JP2004253775A (en) * 2003-01-31 2004-09-09 Nec Electronics Corp Chemical mechanical polishing method
CN102001035A (en) * 2009-08-28 2011-04-06 中芯国际集成电路制造(上海)有限公司 Chemical mechanical polishing system
CN102528653B (en) * 2010-12-30 2014-11-05 中芯国际集成电路制造(上海)有限公司 Fixed type particle grinding device and grinding method thereof
JP2015202545A (en) * 2014-04-16 2015-11-16 株式会社ディスコ Grinding device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344878A (en) * 2005-06-10 2006-12-21 Disco Abrasive Syst Ltd Processing apparatus and processing method
JP2013247132A (en) * 2012-05-23 2013-12-09 Disco Abrasive Syst Ltd Method for processing plate-like object
JP2015046550A (en) * 2013-08-29 2015-03-12 株式会社ディスコ Polishing pad and processing method of wafer

Also Published As

Publication number Publication date
JP2018060872A (en) 2018-04-12
TW201814784A (en) 2018-04-16
KR102320761B1 (en) 2021-11-01
CN107891358A (en) 2018-04-10
CN107891358B (en) 2021-06-18
JP6827289B2 (en) 2021-02-10
KR20180037113A (en) 2018-04-11

Similar Documents

Publication Publication Date Title
TWI719250B (en) Wafer processing method
JP5916513B2 (en) Processing method of plate
JP5963537B2 (en) Processing method of silicon wafer
JP2008155292A (en) Method and apparatus for machining substrate
TWI727089B (en) Wafer processing method and polishing device
JP6192778B2 (en) Silicon wafer processing equipment
JP2017092135A (en) Manufacturing method of device
JP2019212797A (en) Wafer processing method and grinding device
CN108081118B (en) Method for processing wafer
JP2011031359A (en) Polishing tool, polishing device, and polishing machining method
JP6851761B2 (en) How to process plate-shaped objects
JP5907797B2 (en) Wafer processing method
JP7118558B2 (en) Workpiece processing method
JP6890495B2 (en) Wafer processing method
JP6941420B2 (en) Wafer surface treatment equipment
JP7304708B2 (en) Wafer processing method
JP6749202B2 (en) Device chip manufacturing method
JP6938160B2 (en) Processing method of work piece
KR20180035671A (en) Method of machining device wafer
JP2023104444A (en) Processing method for work-piece
JP2023082509A (en) Processing method and processing device
JP2020061501A (en) Wafer processing method