CN107791115A - Processing unit (plant) - Google Patents

Processing unit (plant) Download PDF

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Publication number
CN107791115A
CN107791115A CN201710767736.5A CN201710767736A CN107791115A CN 107791115 A CN107791115 A CN 107791115A CN 201710767736 A CN201710767736 A CN 201710767736A CN 107791115 A CN107791115 A CN 107791115A
Authority
CN
China
Prior art keywords
chip
component
grinding
carrying
defect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710767736.5A
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Chinese (zh)
Other versions
CN107791115B (en
Inventor
沟本康隆
饭岛悠
早川晋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
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Filing date
Publication date
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Publication of CN107791115A publication Critical patent/CN107791115A/en
Application granted granted Critical
Publication of CN107791115B publication Critical patent/CN107791115B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0023Other grinding machines or devices grinding machines with a plurality of working posts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0069Other grinding machines or devices with means for feeding the work-pieces to the grinding tool, e.g. turntables, transfer means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00Other grinding machines or devices
    • B24B27/0076Other grinding machines or devices grinding machines comprising two or more grinding tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • B24B37/345Feeding, loading or unloading work specially adapted to lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

A kind of processing unit (plant) is provided, can be formed on the machined surface of chip desired by remove defect layer and without spending the time.Processing unit (plant) (1) has what the Grinding structural unit (60) being ground to the machined surface of the chip (W) after grinding and being formed on chip (W) machined surface removed defect layer to go defect layer to form component (70), and going defect layer to form component (70) has:Rotating member (71), its make to be formed on chip (W) machined surface remove defect layer go defect wheel (72) to be rotated together with rotating member (71);Lift component (75), it makes defect wheel (72) be lifted in vertical direction relative to the retaining surface (3a) of holding workbench (3) together with rotating member (71);And move horizontally component (76), its make defect wheel (72) together with rotating member (71) relative to keep workbench (3) retaining surface (3a) move in the horizontal direction, therefore can by with Grinding structural unit (60) be used as different institutions go defect layer formed component (70) in a short time on chip (W) machined surface formation remove defect layer.

Description

Processing unit (plant)
Technical field
The present invention relates to processing unit (plant), the processing unit (plant) is processed to chip and formed on the machined surface of chip It is desired to remove defect layer.
Background technology
When being ground to chip and when making its thinning using being ground grinding tool, due to being produced on the machined surface of chip plus Work strain etc. and reduce the rupture strength of chip, so after being ground to chip, pass through dry type without using slurry The dry-fine of grinding is referred to as CMP (ChemicalMechanicalPolishing:Cmp) chemical machinery grind Mill method is ground to the machined surface of chip, and processing strain is removed.
Here, in the chip for having eliminated processing strain, gold the reason for metallic pollution as device is generated The problem of what category impurity was caught goes the disappearance of defect effect.Therefore, as chip is formed produce go defect effect remove defect layer Processing unit (plant), such as have the processing unit (plant) shown in following patent documents 1.In the processing unit (plant), ground to chip After cutting, the grinding using CMP is implemented by Grinding structural unit, afterwards, slurry is switched into pure water, while the back side to chip Pure water is provided between the abradant surface of grinding pad, and defect layer is removed in formation on the backside of the wafer on one side.
Patent document 1:No. 5916513 publications of Japanese Patent Publication No.
However, formed on the backside of the wafer in above-mentioned processing unit (plant) in order to be switched over to slurry and pure water Defect layer is, it is necessary to realize the state that slurry does not adhere on grinding pad completely.That is, it is attached to the state of grinding pad in slurry Under, it can not on the backside of the wafer be formed and desired remove defect layer, it is necessary to be cleaned etc. to grinding pad.Accordingly, there exist ask as follows Topic:Although grinding/grinding of chip has terminated, formation goes defect layer to spend the time.
The content of the invention
The present invention is to complete in view of the foregoing, its object is to provide processing unit (plant), the time can not be spent and Defect layer is removed desired by being formed on the machined surface of chip.
The present invention is to be formed to remove defect on the machined surface after the machined surface of chip is implemented grinding and grinding The processing unit (plant) of layer, wherein, the processing unit (plant) has:Rotary work-table, it is adapted to that rotation can be carried out by axle of center, Chip is pointed to carry out chip the carrying-in/carrying-out region of carrying-in/carrying-out, the grinding for being ground chip by the rotary work-table Region and the abrasive areas being ground to chip;Keep workbench, centered on its center by the rotary work-table according to Angularly arrange, there is the retaining surface kept to chip;Component is transported, it is relative to being positioned at the carrying-in/carrying-out region The holding workbench is moved into and taken out of to chip;It is ground component, its holding workbench to being positioned at the grinding area The chip kept is ground and chip is formed as defined thickness;Grinding structural unit, it is to being positioned at the abrasive areas The machined surface for the chip that the holding workbench is kept is ground;And going defect layer to form component, it is removed being positioned at this Enter to take out of to be formed on the machined surface for the chip that the holding workbench in region is kept and remove defect layer, this goes defect layer to form component tool Have:Rotating member, it has the main shaft rotated using the center of mounting seat as axle, wherein being mounted with plectane in the mounting seat Shape removes defect pad;And lift component, it makes the rotating member relative to the retaining surface of the holding workbench in vertical direction On lifted.
Also, the processing unit (plant), which can also be configured to have, moves horizontally component, and this, which moves horizontally component, makes the above-mentioned rotation Turn component to move in the horizontal direction relative to the above-mentioned retaining surface of above-mentioned holding workbench.
The processing unit (plant) of the present invention has:Rotary work-table, it is adapted to that rotation can be carried out by axle of center, by crystalline substance Piece is positioned at carrying-in/carrying-out region, grinding area and abrasive areas;Workbench is kept, it is using the center of rotary work-table in The heart has the retaining surface kept to chip according to angularly arranging;Component is transported, it is relative to being positioned at carrying-in/carrying-out area The holding workbench in domain is moved into and taken out of to chip;It is ground component, its holding workbench institute to being positioned at grinding area The chip of holding is ground and chip is formed as defined thickness;Grinding structural unit, its holding to being positioned at abrasive areas The machined surface for the chip that workbench is kept is ground;And going defect layer to form component, it is being positioned at carrying-in/carrying-out area Formed on the machined surface for the chip that the holding workbench in domain is kept and remove defect layer, going defect layer to form component has:Rotating member, It has the main shaft that is rotated using the center of mounting seat as axle, wherein being mounted with discoideus to remove defect pad in the mounting seat; And lift component, it makes rotating member be lifted in vertical direction relative to the retaining surface of holding workbench, therefore After grinding/grinding is implemented to chip, rotate rotary work-table and table positions will be kept in carrying-in/carrying-out region, by This, can go defect layer to form component to be formed on the machined surface of chip and remove defect layer by being used as different institutions with Grinding structural unit And without spending the time.
With making above-mentioned rotating member be moved in the horizontal direction relative to the above-mentioned retaining surface of above-mentioned holding workbench Move horizontally component in the case of, defect layer can will be gone to form component and be positioned at chip will not be hindered above-mentioned relative to being positioned at The position that the above-mentioned holding workbench in carrying-in/carrying-out region is moved into and taken out of, as described above, can be in the quilt of chip Formed on machined surface and remove defect layer and do not have to spend the time.
Brief description of the drawings
Fig. 1 is the stereogram for the structure for showing processing unit (plant).
Fig. 2 is the stereogram for the structure for showing Grinding structural unit.
Fig. 3 is to show that defect layer forms the stereogram of the structure of component.
Fig. 4 is shown by going defect layer to form the section view that component forms the state for removing defect layer on the machined surface of chip Figure.
Label declaration
1:Processing unit (plant);2:Rotary work-table;3:Keep workbench;4:Demarcation strip;5a、5b:Box;6:Carrying-in/carrying-out structure Part;7:X-direction mobile member;8:Temporarily put component;9:Cleaning element;10:Transport component;11:Absorption layer;12:Arm;13:Branch Hold bar;14:Movable block;15:Support column;16:Guide rail;20:Corase grind cuts component;21:Main shaft;22:Main shaft shell;23:Motor; 24:Roughly grind skiving wheel;25:It is ground grinding tool;30:Thick grinding and feeding component;31:Ball-screw;32:Motor;33:Guide rail;34: Lifter plate;340:Guiding groove;40:Fine ginding component;41:Main shaft;42:Main shaft shell;43:Motor;44:Roughly grind skiving wheel; 45:It is ground grinding tool;50:Fine ginding feeds component;51:Ball-screw;52:Motor;53:Guide rail;54:Lifter plate;540:Draw Guide groove;60:Grinding structural unit;61:Rotating member;610:Main shaft;611:Motor;612:Main shaft shell;613:Guiding groove;62: Abrasive wheel;620:Mounting seat;621:Base station;622:Grinding pad;63:Moveable block;630:Guide rail;631:Guiding groove;64:It is fixed Block;640:Guide rail;65:1st grinding feeding component;650:Motor;66:2nd grinding feeding component;660:Motor;70:Go Defect layer forms component;71:Rotating member;710:Main shaft;711:Motor;712:Main shaft shell;713:Guiding groove;72:Remove defect Wheel;720:Mounting seat;721:Base station;722:Remove defect pad;73:Moveable block;730:Guide rail;731:Guiding groove;74:Fixed block; 740:Guide rail;741:Guiding groove;75:Lift component;750:Motor;76:Move horizontally component;760:Ball-screw;761: Motor;80:Trimming unit;81:Bracket;82:Finishing member;90:Pure water provides component.
Embodiment
Processing unit (plant) 1 shown in Fig. 1 is to implementing the one of the processing unit (plant) of grinding/grinding as the chip of machined object Example.Processing unit (plant) 1 has along the device pedestal 100 of Y direction extension and setting is set at the Y direction rear portion of device pedestal 100 The upstanding wall 101 put.Processing unit (plant) 1 shown in present embodiment has:Carrying-in/carrying-out region P1, it is used to remove chip Enter to take out of;Thick grinding area P2, it is used to carrying out corase grind to the chip before processing cutting;Fine ginding region P3, it is used for corase grind Chip after cutting carries out fine ginding;And abrasive areas P4, it is used to be ground the chip after fine ginding.
The rotary work-table 2 of rotation can be carried out using center as axle by being equipped with the upper face center of device pedestal 100, The holding workbench 3 kept to chip is equipped on rotary work-table 2.With rotary work-table 2 on the rotary work-table 2 Center centered on set it is equal angular interval and at least arrange 4 holding workbench 3.Match somebody with somebody in the upper surface of rotary work-table 2 Provided with the demarcation strip 4 for being separated to the region for being equipped with each holding workbench 3.The height of demarcation strip 4 is than keeping work The height of platform 3 is high.Also, holding workbench 3 is revolved round the sun by rotating rotary work-table 2, can will keep workbench 3 according to It is secondary to be positioned at carrying-in/carrying-out region P1, thick grinding area P2, fine ginding region P3 and abrasive areas P4.
Adjacent microscope carrier 102a, 102b are equipped with the Y direction of device pedestal 100 is anterior.It is equipped on microscope carrier 102a The box 5a stored to the chip before grinding, the box 5b stored to the chip after grinding is equipped with microscope carrier 102b. Be equipped with carrying-in/carrying-out component 6 near box 5a and box 5b, the carrying-in/carrying-out component 6 be processed before chip from box 5a's Chip moving into box 5b after taking out of and being processed.Carrying-in/carrying-out component 6 is connected with X-direction mobile member 7.And And carrying-in/carrying-out component 6 is moved horizontally in the X-axis direction by X-direction mobile member 7, thereby, it is possible to by carrying-in/carrying-out Component 6 is positioned at the position relative with box 5a or box 5b.
It is equipped near the P1 of carrying-in/carrying-out region and temporarily puts component 8, this is temporarily put component 8 and temporarily put simultaneously for the chip before processing Carry out center contraposition.The cleaning element cleaned to the chip after processing is equipped in the opening position adjacent with temporarily putting component 8 9。
Processing unit (plant) 1 has:Component 10 is transported, it is by chip relative to the holding work for being positioned at carrying-in/carrying-out region P1 Platform 3 is moved into and taken out of;Corase grind cuts component 20, and it will be positioned in the crystalline substance that thick grinding area P2 holding workbench 3 is kept Piece is slightly ground to defined thickness;Thick grinding and feeding component 30, it cuts the phase in vertical direction (Z-direction) of component 20 to corase grind For keeping workbench 3 to carry out grinding and feeding;Fine ginding component 40, it will be positioned in fine ginding region P3 holding workbench 3 The chip fine ginding kept is to defined completion thickness;Fine ginding feeds component 50, and it is to fine ginding component 40 in Z-direction On relative to keep workbench 3 carry out grinding and feeding;Grinding structural unit 60, its holding workbench 3 to being positioned at abrasive areas P4 The machined surface of the chip kept is ground;And going defect layer to form component 70, it is being positioned at carrying-in/carrying-out region P1 The machined surface of chip that is kept of holding workbench on formed and remove defect layer.
Conveyance component 10 has:Discoideus absorption layer 11, it is adsorbed to chip;Arm 12, it is to absorption layer 11 Supported;Support rod 13, it is supported to arm 12;A pair of support columns 15, they are arranged on device pedestal 100;Lead Rail 16, it is fixed on the upper end of a pair of support columns 15, extended in the Y-axis direction;And movable block 14, it is upper with support rod 13 End links, and is moved back and forth in the Y-axis direction along guide rail 16.Support rod 13 can be by elevating mechanism (not shown) in Z axis side Lifted upwards.The conveyance component 10 so formed can arrive the wafer transfer being temporarily put in before temporarily putting processing on component 8 It is positioned on carrying-in/carrying-out region P1 holding workbench 3, and can be by the chip after processing from being positioned at carrying-in/carrying-out area Domain P holding workbench 3 takes out of and is transported on cleaning element 9.
Corase grind cuts the side that component 20 is disposed in upstanding wall 101 by thick grinding and feeding component 30, and configures and cut in corase grind In the P2 of region.Corase grind, which cuts component 20, to be had:Main shaft 21, it has the axle center of Z-direction;Main shaft shell 22, it is by 21, main shaft Hold as that can rotate;Motor 23, it is connected with the upper end of main shaft 21;Skiving wheel 24 is roughly ground, it is arranged on the lower end of main shaft 21; And the grinding grinding tool 25 that corase grind is cut, it is annularly fixedly mounted on the bottom of corase grind skiving wheel 24.Also, pass through motor 23 are rotated main shaft 21, so as to make corase grind skiving wheel 24 be rotated with defined rotary speed.
Thick grinding and feeding component 30 has:Ball-screw 31, it extends along Z-direction;Motor 32, itself and ball-screw 31 one end connection;A pair of guide rails 33, they are extended in parallel with ball-screw 31;And lifter plate 34, one face and corase grind Component 20 is cut to link.A pair of the guiding grooves 340 and guide rail 33 for being formed at another face of lifter plate 34 are slidably connected, and are formed at liter The nut for dropping the central portion of plate 34 screws togather with ball-screw 31.Ball-screw 31 is rotated by motor 32, so as to Enough make corase grind cut component 20 to be lifted in the Z-axis direction along a pair of guide rails 33 together with lifter plate 34.
Fine ginding component 40 is disposed in the side of upstanding wall 101 by fine ginding feeding component 50, and configures in fine ginding In the P3 of region.Fine ginding component 40 has:Main shaft 41, it has the axle center of Z-direction;Main shaft shell 42, it is by 41, main shaft Hold as that can rotate;Motor 43, it is connected with the upper end of main shaft 41;Fine ginding emery wheel 44, it is arranged on the lower end of main shaft 41; And the grinding grinding tool 45 of fine ginding, it is annularly fixedly mounted on the bottom of fine ginding emery wheel 44.Made by motor 43 Main shaft 41 is rotated, so as to make fine ginding emery wheel 44 be rotated with defined rotary speed.
Fine ginding feeding component 50 has:Ball-screw 51, it extends along Z-direction;Motor 52, itself and ball-screw 51 one end connection;A pair of guide rails 53, they are extended in parallel with ball-screw 51;And lifter plate 54, one face and fine grinding Component 40 is cut to link.A pair of the guiding grooves 540 and guide rail 53 for being formed at another face of lifter plate 54 are slidably connected, and are formed at liter The nut for dropping the central portion of plate 54 screws togather with ball-screw 51.Ball-screw 51 is rotated by motor 52, so as to Fine ginding component 40 is enough set to be lifted in the Z-axis direction along a pair of guide rails 53 together with lifter plate 54.
Grinding structural unit 60 is disposed in as shown in double dot dash line on device pedestal 100, and is configured in abrasive areas P4 It is interior.As shown in Fig. 2 Grinding structural unit 60 has:Abrasive wheel 62, its machined surface to chip are ground;Rotating member 61, its Rotated abrasive wheel 62;Moveable block 63, it supports rotating member 61 as that can be lifted in the Z-axis direction;1st grinds Mill feeding component 65, it is disposed in moveable block 63, rotating member 61 is lifted in the Z-axis direction;Fixed block 64, it will The supporting of moveable block 63 is to move in the X-axis direction;And the 2nd grinding feeding component 66, it is disposed in fixed block 64 On, moveable block 63 is moved in the parallel X-directions of the retaining surface 3a relative to holding workbench 3.
Rotating member 61 has:Main shaft 610, it has the axle center of Z-direction;Motor 611, it is upper with main shaft 610 End connection;And main shaft shell 612, it supports main shaft 610 as that can rotate.Abrasive wheel 62 has:Base station 621, its by Mounting seat 620 is arranged on the lower end of main shaft 610 in a manner of it can assemble and disassemble;And discoideus grinding pad 622, it is arranged on base The bottom of platform 621.Also, rotating member 61 is driven to motor 611, so as to make grinding pad 622 with mounting seat 620 Center rotated according to the rotary speed of regulation for axle.
Grinding pad 622 is for example by making abrasive particle be dispersed in polyurathamc or non-woven fabrics and enter by appropriate bond material Grinding pad obtained by row is fixed is formed.On abrasive particle, such as the GC (Green that particle diameter is 0.2~1.5 μm can be used Carbide:Green silicon carbide) abrasive particle.Also, as long as abrasive particle is higher than the hardness of chip, the machined surface of chip can be caused The abrasive particle of small scar.As abrasive particle, in addition to GC abrasive particles or diamond, aluminum oxide, ceria, The abrasive particles such as CBN.In the case where carrying out the attrition process using CMP by Grinding structural unit 60, although not illustrated, Connection is provided with the slurry offer source of slurry between the machined surface for the chip that grinding pad 622 and holding workbench 3 are kept.Separately Outside, slurry is more using the lapping liquid of alkalescence, but can also be ground according to the material of the chip as processing object using acid Grinding fluid.Also, the attrition process of dry type (dry-fine) can also be carried out using Grinding structural unit 60.
1st grinding feeding component 65 has:Ball-screw (not shown), it extends along Z-direction;And motor 650, It is connected with one end of ball-screw.In the side of moveable block 63 formed with a pair of guide rails 630 extended along Z-direction, formed It is slidably connected in a pair of guiding grooves 613 of main shaft shell 612 with a pair of guide rails 630, is formed at the central of main shaft shell 612 Nut screws togather with ball-screw.Also, rotated ball-screw by motor 650, so as to make abrasive wheel 62 with Rotating member 61 moves in the Z-axis direction along a pair of guide rails 630 together.
2nd grinding feeding component 66 has:Ball-screw (not shown), it extends along X-direction;And motor 660, It is connected with one end of ball-screw.In the side of fixed block 64 formed with a pair of guide rails 640 extended along X-direction, formed Be slidably connected in a pair of guiding grooves 631 of moveable block 63 with a pair of guide rails 640, be formed at the central nut of moveable block 63 with Ball-screw screws togather.Also, rotated ball-screw by motor 660, so as to make moveable block 63 along a pair Guide rail 640 moves in the X-axis direction.
Go defect layer formation component 70 to configure near Grinding structural unit 60 shown in Fig. 1, and configure in carrying-in/carrying-out region In P1.As shown in figure 3, going defect layer to form component 70 has:Defect wheel 72 is removed, it forms on the machined surface of chip and removes defect layer; Rotating member 71, it is rotated defect wheel 72;Moveable block 73, it supports rotating member 71 for can be in the Z-axis direction Lifted;Lift component 75, it makes rotating member 71 relative to the retaining surface 3a of the holding workbench 3 shown in Fig. 1 vertical Lifted on direction (Z-direction);Fixed block 74, it supports moveable block 73 as that can move in the Y-axis direction;With And component 76 is moved horizontally, it is disposed on fixed block 74, makes moveable block 73 relative to the retaining surface 3a of holding workbench 3 in water Square to moving in (Y direction).
Rotating member 71 has:Main shaft 710, it has the axle center of Z-direction;Motor 711, it is upper with main shaft 710 End connection;And main shaft shell 712, it supports main shaft 710 as that can rotate.Defect wheel 72 is gone to have:Base station 721, its by Mounting seat 720 is arranged on the lower end of main shaft 710 in a manner of it can assemble and disassemble;And it is discoideus remove defect pad 722, it is arranged on base The bottom of platform 721.Also, go defect layer to form component 70 to be driven motor 711, so as to make defect pad 722 to pacify The center of dress seat 720 is rotated for axle according to the rotary speed of regulation.
The diameter for removing defect pad 722 be, for example, shown in Fig. 1 holding workbench 3 retaining surface 3a radius more than and diameter with Under.Go defect pad 722 with above-mentioned grinding pad 622 again it is making the abrasive particle such as GC, diamond, aluminum oxide, ceria, CBN It is dispersed in such as polyurathamc or non-woven fabrics and obtained by being fixed by appropriate bond material.On abrasive particle, make With the small abrasive particle of the particle diameter of abrasive particle of the particle diameter than being dispersed in grinding pad 622.As shown in figure 4, go defect layer formed component 70 with it is pure Water extraction supply source 90 connects.Pure water provides source 90 and employed from the center of defect pad 722 is gone to chip with going to the part that defect pad 722 contacts The structure of the pure water of flow as defined in offer.In addition, defect layer is removed according to what is formed, the abrasive particle being dispersed in defect pad 722 Particle diameter can also be more than the particle diameter for the abrasive particle being dispersed in grinding pad 622.
Lift component 75 shown in Fig. 3 has:Ball-screw (not shown), it extends along Z-direction;And motor 750, it is connected with one end of ball-screw.Moveable block 73 side 73a formed with a pair of guide rails extended along Z-direction 730, a pair of the guiding grooves 713 and a pair of guide rails 730 for being formed at main shaft shell 712 are slidably connected, the center of main shaft shell 712 Nut screwed togather with ball-screw.Also, rotated ball-screw by motor 750, so as to make defect wheel 72 Lifted in the Z-axis direction along a pair of guide rails 730 with together with rotating member 71.
Moving horizontally component 76 has:Ball-screw 760, it extends along Y direction;And motor 761, itself and ball One end connection of leading screw 760.Formed with a pair of guide rails 740 extended along Y direction on the side 74a of fixed block 74, formed It is slidably connected in a pair of guiding grooves 731 of moveable block 73 with a pair of guide rails 740, the central nut and ball wire of moveable block 73 Thick stick 760 screws togather.Ball-screw 760 is rotated by motor 761, so as to make moveable block 73 along a pair of guide rails 740 move horizontally in the Y-axis direction, defect wheel 72 is moved horizontally in the Y-axis direction together with rotating member 71.This embodiment party Fixed block 74 shown in formula employs the structure for the position for extending to the outside for projecting to the rotary work-table 2 shown in Fig. 1. Therefore, when implementing chip relative to when the moving into and taking out of of holding workbench 3 for being positioned at carrying-in/carrying-out region P1, level is passed through Moveable block 73 is moved to the retreating position for example kept out of the way to -Y direction side, Neng Goufang by mobile member 76 from carrying-in/carrying-out region P1 Only go defect layer to form component 70 and hinder chip moving into and removing relative to the holding workbench 3 for being positioned at carrying-in/carrying-out region P1 Go out.
And then as shown in figure 3, in defect layer formation component 70 is being removed, it is equipped going the lower side of defect wheel 72 for going Defect pad 722 is repaired the trimming unit 80 of (mill saw and shaping).Trimming unit 80 has:Bracket 81, it is fixed on fixed block 74 side 74a;And finishing member 82, it is disposed in the top of bracket 81.Also, using trimming unit 80 to removing defect pad 722 when being repaired, and defect wheel 72 is carried out rotation while will remove defect using lift component 75 by rotating member 71 on one side Pad 722 is positioned at after the height contacted with finishing member 82, makes the carry out level shifting of defect pad 722 by moving horizontally component 76 It is dynamic, using finishing member 82 to going defect pad 722 to carry out shaving, so as to implement to repair.
Then, the action example of processing unit (plant) 1 is described in detail.As the wafer W shown in Fig. 4 of processing object be by One of machining object, does not limit especially.As wafer W, such as include Si chips, GaN wafer, SiC wafer etc..In crystalline substance Formed with multiple devices on piece W positive Wa, the positive Wa, which turns into be maintained at, to be kept being kept face on workbench 3.At this just Guard block is pasted with advance on the Wa of face.On the other hand, the back side Wb of the side opposite with positive Wa of wafer W turns into and ground Cut/grind and supply the machined surface for going defect layer to be formed.The wafer W being accommodated with the box 5a shown in Fig. 1 before multiple processing.
First, carrying-in/carrying-out component 6 takes out the wafer W before a processing from box 5a, is made by X-direction mobile member 7 Carrying-in/carrying-out component 6 for example moves and is temporarily placed on wafer W and temporarily puts on component 8 in the-x direction.Then, conveyance component 10 utilizes Absorption layer 11 is adsorbed to the wafer W after the positioning of the position at center of wafer W has been carried out in temporarily putting component 8, and wafer W is removed It is sent on the standby holding workbench 3 of carrying-in/carrying-out region P1.Now, defect layer is made to form component 70 along fixed block 74 As moved in the-y direction, wafer W will not be hindered to the retreating position moved into for keeping workbench 3 by keeping out of the way.Keep workbench 3 Attracting holding is carried out to wafer W using retaining surface 3a, the attraction for having attraction source to retaining surface 3a effects.
Then, rotary work-table 2 is for example rotated according to arrow A directions, while making positioned at carrying-in/carrying-out region P1's Workbench 3 is kept to carry out rotation while wafer W is pointed into thick grinding area P2.Thick grinding and feeding component 30 passes through motor 32 Ball-screw 31 is driven, so that corase grind cuts component 20 towards the wafer W being maintained on holding workbench 3 in -Z direction Upper decline.Corase grind, which cuts component 20, makes main shaft 21 carry out rotation while being pressed using grinding tool 25 is ground wafer W and thick It is ground to untill wafer W reaches desired thickness.At the time of wafer W reaches desired thickness, pass through thick grinding and feeding component 30 make corase grind cut component 20 rises along +Z direction, thick grinding terminates.
After thick grinding terminates, rotary work-table 2 is rotated then according to arrow A directions, will be roughly ground The wafer W cut is pointed to fine ginding region P3.Fine ginding feeding component 50 is driven by motor 52 to ball-screw 51, So that fine ginding component 40 declines in the-z direction towards the wafer W being maintained on holding workbench 3.Fine ginding component 40 1 While make main shaft 41 carry out rotation on one side using be ground grinding tool 45 wafer W is pressed and fine ginding to wafer W reach completion thickness Untill degree.At the time of wafer W reaches completion thickness, feeding component 50 by fine ginding makes fine ginding component 40 along in +Z direction Rise, fine ginding terminates.
After fine ginding terminates, rotary work-table 2 is rotated then according to arrow A directions, will be refined The wafer W cut is pointed to abrasive areas P4.One side of Grinding structural unit 60 shown in Fig. 2 is by making main shaft 610 rotate to make grinding pad 622 are rotated with defined rotary speed, while feeding component 65 by the 1st grinding makes abrasive wheel 62 and main shaft shell 612 Decline together.Make the grinding pad 622 of rotation keep the entire surface of the wafer W on workbench 3 to contact with being maintained at, and pass through the 2 grinding feeding components 66 make moveable block 63 move back and forth in the X-axis direction, thus, make the grinding pad 622 and wafer W phase of rotation Slide over the ground and wafer W is ground.In the grinding of wafer W, wafer W and grinding pad of the source to rotation are provided from slurry Slurry is provided between 622, thus, is combined with each other the mechanism that the chemical action that slurry plays plays with grinding pad 622, will The processing strain that the machined surface of wafer W is resulted from during grinding removes.
After grinding terminates, rotary work-table 2 is set to be rotated then according to arrow A directions, the crystalline substance that will be ground Piece W is pointed to carrying-in/carrying-out region P1.At least defect layer is set to form component 70 along fixed block before starting defect layer and being formed 74 for example move in +Y direction and are moved to carrying-in/carrying-out region P1 from above-mentioned retreating position.When the quilt in wafer W Formed on machined surface in the case of removing defect layer, as shown in figure 4, while making holding workbench 3 for example be revolved according to arrow B directions Turn, and main shaft 710 is rotated and defect wheel 72 is for example revolved with defined rotary speed according to arrow B directions Turn, while making defect wheel 72 decline together with main shaft shell 712 by the lift component 75 shown in Fig. 3.By making defect pad 722 Keep the back side Wb of wafer W on workbench 3 to contact with being maintained at, and by moving horizontally shown in Fig. 3 component 76 makes can Motion block 73 moves back and forth in the Y-axis direction, make rotation go defect pad 722 and wafer W relatively slide and in the back side Wb of wafer W Defect layer is removed in upper formation.
Now, source 90 is provided from the center of defect pad 722 is gone to going defect pad 722 and the contact surface of wafer W to provide by pure water Pure water.That is, by make pure water enter rotation wafer W back side Wb and between removing the abradant surface of defect pad 722, in wafer W Damage (damage) layer being made up of fine scar is formed on the Wb of the back side.The damaging layer as produce go defect effect remove defect layer And play function.So, by going defect layer to form component 70 to the wafer W after grinding/grinding different from Grinding structural unit 60 Back side Wb is ground and is overleaf formed on Wb and remove defect layer.In addition, in the present embodiment, used to form defect layer Pure water, but in addition to pure water, the decoction of sum in being carried out to the slurry used in grinding can also be used.That is, Acid decoction is provided when being ground using the slurry of alkalescence to be neutralized.The decoction that preferred pair slurry is neutralized It is the liquid not reacted with silicon.
After defect layer is formd, make to go defect layer formation component 70 to be moved to from carrying-in/carrying-out region P1 shown in Fig. 1 Above-mentioned retreating position.Then, component 10 is transported using absorption layer 11 to being held in place in carrying-in/carrying-out region P1 holding work The wafer W processed made on platform 3 is adsorbed, and wafer W is transported on cleaning element 9.By cleaning element 9 to chip After W implements cleaning treatment/drying process, wafer W is taken out and is accommodated in from cleaning element 9 by carrying-in/carrying-out component 6 In box 5b.So, complete the grinding for 1 wafer W, grind and go the formation of defect layer.Also, multiple wafer Ws are repeated Carry out above-mentioned same processing.
When using going defect layer formation component 70 that multiple wafer Ws are continuously carried out with the formation of defect layer, due to removing defect pad 722 rusts produce abrasion, so in processing unit (plant) 1, using the trimming unit 80 shown in Fig. 3 to going defect pad 722 to repair It is whole.Specifically, make moveable block 73 move in the X-axis direction will to remove defect by the component 76 that moves horizontally shown in Fig. 3 Wheel 72 is positioned at the top of finishing member 82.Then, while being rotated main shaft 710 by rotating member 71 to make defect wheel 72 are rotated, and go defect pad 722 to push against in finishing member rotation while declining defect pad 722 by lift component 75 82 pairs are gone defect pad 722 to carry out shaving, so as to be repaired to the abradant surface for removing defect pad 722.In addition, to going defect pad 722 to repair Whole opportunity does not limit especially, often the state for removing defect pad 722 can be monitored and implement suitably to repair, also may be used Regularly to implement to repair.
So, processing unit (plant) 1 of the invention has:Rotary work-table 2, it is adapted to carry out certainly by axle of center Turn, and rotated along carrying-in/carrying-out region P1, thick grinding area P2, fine ginding region P3 and abrasive areas P4;Keep Workbench 3, it, according to angularly arranging, has the retaining surface kept to wafer W centered on the center of rotary work-table 2 3a;Component 10 is transported, it is moved into and taken out of to wafer W relative to the holding workbench 3 for being positioned at carrying-in/carrying-out region P1; Corase grind cuts component 20, and it will be positioned in the wafer W that thick grinding area P2 holding workbench 3 is kept and is slightly ground to defined thickness Degree;Fine ginding component 40, it will be positioned in the wafer W fine ginding that fine ginding region P3 holding workbench 3 is kept and extremely completes Thickness;Grinding structural unit 60, the machined surface of its wafer W kept to the holding workbench 3 for being positioned at abrasive areas P4 are carried out Grinding;And defect layer is gone to form component 70, its wafer W kept in the holding workbench 3 for being positioned at carrying-in/carrying-out region P1 Machined surface on formed remove defect layer, go defect layer formed component 70 have:Defect wheel 72 is removed, its shape on the machined surface of wafer W Into removing defect layer;Rotating member 71, it is rotated defect wheel 72;Lift component 75, it makes defect wheel 72 and rotating member 71 Lifted together relative to the retaining surface 3a of holding workbench 3 in vertical direction (Z-direction);And move horizontally component 76, its make defect wheel 72 together with rotating member 71 relative to keep workbench 3 retaining surface 3a in the horizontal direction (Y direction) On move, therefore after grinding/grinding is implemented to wafer W, can use and be used as different institutions with Grinding structural unit 60 Go defect layer formed component 70 in a short time on the machined surface of wafer W formed desired by remove defect layer.
To going defect layer formation component 70 to remove defect pad 722 with the wet type type for having used pure water shown in present embodiment Situation be illustrated, but be not limited to the structure, go what defect layer formed that component 70 can also use dry type go defect pad to exist Formed on the back side Wb of wafer W and remove defect layer.In such a situation it is preferred that defect pad and holding workbench is gone to cover using to dry type Lid is covered to prevent from using going defect pad to be formed on the machined surface of wafer W dust caused by defect layer ought being gone to disperse.
Defect layer is being gone to be formed in component 70 with the feelings for moving horizontally component 76 processing unit (plant) 1 shown in present embodiment Condition is illustrated, but is not limited to the structure or without the structure for moving horizontally component 76.In the situation Under, preferably trimming unit 80 itself is configured to relative to going defect pad 722 to be moved in the horizontal direction in (Y direction).

Claims (2)

1. a kind of processing unit (plant), it is after grinding and grinding is implemented to the machined surface of chip, the shape on the machined surface Into removing defect layer, wherein,
The processing unit (plant) has:
Rotary work-table, it is adapted to that rotation can be carried out by axle of center, and chip is pointed to crystalline substance by the rotary work-table Piece carries out carrying-in/carrying-out region, the grinding area being ground to chip and the grinding being ground to chip of carrying-in/carrying-out Region;
Workbench is kept, according to angularly arranging centered on its center by the rotary work-table, has and chip is kept Retaining surface;
Component is transported, it is moved into and taken out of to chip relative to the holding workbench for being positioned at the carrying-in/carrying-out region;
Component is ground, its chip kept to the holding workbench for being positioned at the grinding area is ground and makes chip shape As defined thickness;
Grinding structural unit, the machined surface of its chip kept to the holding workbench for being positioned at the abrasive areas are ground Mill;And
Defect layer is gone to form component, its chip kept in the holding workbench for being positioned at the carrying-in/carrying-out region is processed Formed on face and remove defect layer,
This, which goes defect layer to form component, has:
Rotating member, it has the main shaft rotated using the center of mounting seat as axle, wherein being mounted with to justify in the mounting seat Tabular removes defect pad;And
Lift component, it makes the rotating member be lifted in vertical direction relative to the retaining surface of the holding workbench.
2. processing unit (plant) according to claim 1, wherein,
The processing unit (plant), which has, moves horizontally component, and this, which moves horizontally component, makes the rotating member relative to the holding work The retaining surface of platform moves in the horizontal direction.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109571156A (en) * 2019-01-24 2019-04-05 刘兴秋 A kind of grinding and polishing unit
CN109822419A (en) * 2019-03-04 2019-05-31 天通日进精密技术有限公司 Wafer transfer device and wafer transfer method
CN111438580A (en) * 2019-01-17 2020-07-24 株式会社迪思科 Method for processing workpiece
CN113305732A (en) * 2021-06-22 2021-08-27 北京中电科电子装备有限公司 Multi-station full-automatic thinning grinding method for semiconductor equipment
CN114227526A (en) * 2022-02-28 2022-03-25 西安奕斯伟材料科技有限公司 Grinding carrying platform, grinding device, grinding method and silicon wafer
WO2023123602A1 (en) * 2021-12-29 2023-07-06 华海清科股份有限公司 Rotary wafer exchange system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111216003A (en) * 2020-03-15 2020-06-02 湖北工业大学 Grinding and polishing device for machining and producing mechanical parts

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0684638A2 (en) * 1994-05-24 1995-11-29 Shin-Estu Handotai Company Limited Method for inducing damage to wafers
GB2331948A (en) * 1997-12-02 1999-06-09 Nec Corp Polishing machine for flattening substrate surface.
CN1581443A (en) * 2003-08-12 2005-02-16 株式会社迪斯科 Wafer processing method
CN101136313A (en) * 2006-08-30 2008-03-05 株式会社迪思科 Symmicton forming device
JP2008124145A (en) * 2006-11-09 2008-05-29 Lintec Corp Transfer method and grinder for semiconductor wafer
JP2010225987A (en) * 2009-03-25 2010-10-07 Disco Abrasive Syst Ltd Polishing method of wafer and polishing pad
JP2011082470A (en) * 2009-09-11 2011-04-21 Tokyo Seimitsu Co Ltd Method for processing wafer and wafer processing apparatus
JP2011101913A (en) * 2009-11-10 2011-05-26 Disco Abrasive Syst Ltd Machining device of wafer
JP2013244537A (en) * 2012-05-23 2013-12-09 Disco Corp Method for working plate-like object
JP2015230935A (en) * 2014-06-04 2015-12-21 株式会社ディスコ Silicon wafer processing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD109365A1 (en) 1973-05-10 1974-11-05
JP2013004910A (en) * 2011-06-21 2013-01-07 Disco Abrasive Syst Ltd Processing method of wafer having embedded copper electrode
JP6208498B2 (en) * 2013-08-29 2017-10-04 株式会社ディスコ Polishing pad and wafer processing method
KR20150143151A (en) * 2014-06-13 2015-12-23 삼성전자주식회사 Method for polishing substrate
JP6366383B2 (en) * 2014-06-27 2018-08-01 株式会社ディスコ Processing equipment

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0684638A2 (en) * 1994-05-24 1995-11-29 Shin-Estu Handotai Company Limited Method for inducing damage to wafers
GB2331948A (en) * 1997-12-02 1999-06-09 Nec Corp Polishing machine for flattening substrate surface.
CN1581443A (en) * 2003-08-12 2005-02-16 株式会社迪斯科 Wafer processing method
CN101136313A (en) * 2006-08-30 2008-03-05 株式会社迪思科 Symmicton forming device
JP2008124145A (en) * 2006-11-09 2008-05-29 Lintec Corp Transfer method and grinder for semiconductor wafer
JP2010225987A (en) * 2009-03-25 2010-10-07 Disco Abrasive Syst Ltd Polishing method of wafer and polishing pad
JP2011082470A (en) * 2009-09-11 2011-04-21 Tokyo Seimitsu Co Ltd Method for processing wafer and wafer processing apparatus
JP2011101913A (en) * 2009-11-10 2011-05-26 Disco Abrasive Syst Ltd Machining device of wafer
JP2013244537A (en) * 2012-05-23 2013-12-09 Disco Corp Method for working plate-like object
JP2015230935A (en) * 2014-06-04 2015-12-21 株式会社ディスコ Silicon wafer processing method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111438580A (en) * 2019-01-17 2020-07-24 株式会社迪思科 Method for processing workpiece
CN111438580B (en) * 2019-01-17 2023-09-19 株式会社迪思科 Method for processing object to be processed
CN109571156A (en) * 2019-01-24 2019-04-05 刘兴秋 A kind of grinding and polishing unit
CN109822419A (en) * 2019-03-04 2019-05-31 天通日进精密技术有限公司 Wafer transfer device and wafer transfer method
CN113305732A (en) * 2021-06-22 2021-08-27 北京中电科电子装备有限公司 Multi-station full-automatic thinning grinding method for semiconductor equipment
WO2023123602A1 (en) * 2021-12-29 2023-07-06 华海清科股份有限公司 Rotary wafer exchange system
CN114227526A (en) * 2022-02-28 2022-03-25 西安奕斯伟材料科技有限公司 Grinding carrying platform, grinding device, grinding method and silicon wafer
CN114227526B (en) * 2022-02-28 2022-06-07 西安奕斯伟材料科技有限公司 Grinding carrying platform, grinding device, grinding method and silicon wafer
TWI816544B (en) * 2022-02-28 2023-09-21 大陸商西安奕斯偉材料科技股份有限公司 Grinding stage, grinding device, grinding method and silicon wafer

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