JP5048379B2 - Wafer processing method - Google Patents

Wafer processing method Download PDF

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JP5048379B2
JP5048379B2 JP2007099356A JP2007099356A JP5048379B2 JP 5048379 B2 JP5048379 B2 JP 5048379B2 JP 2007099356 A JP2007099356 A JP 2007099356A JP 2007099356 A JP2007099356 A JP 2007099356A JP 5048379 B2 JP5048379 B2 JP 5048379B2
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grinding
wafer
ring
shaped reinforcing
reinforcing portion
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JP2008258417A (en
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カール・プリワッサ
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Disco Corp
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Disco Corp
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Priority to TW097106103A priority patent/TWI421932B/en
Priority to US12/056,748 priority patent/US20080248730A1/en
Priority to CN2008100908069A priority patent/CN101281861B/en
Priority to DE102008017061A priority patent/DE102008017061A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Description

本発明は、薄く形成されても取り扱いが容易となるようなウェーハの加工方法に関するものである。   The present invention relates to a method of processing a wafer that is easy to handle even if formed thin.

ＩＣ、ＬＳＩ等のデバイスが表面側に複数形成されたウェーハは、ダイシング装置等を用いて個々のデバイスに分割され、各種電子機器に組み込まれて広く使用されている。そして、電子機器の小型化、軽量化等を図るために、個々のデバイスに分割される前のウェーハは、裏面が研削され、その厚さが例えば２０μｍ〜１００μｍになるように形成される。   A wafer on which a plurality of devices such as IC and LSI are formed on the surface side is divided into individual devices using a dicing apparatus or the like, and is widely used by being incorporated into various electronic devices. In order to reduce the size and weight of the electronic device, the wafer before being divided into individual devices is formed such that the back surface is ground and the thickness thereof becomes, for example, 20 μm to 100 μm.

しかし、研削により薄く形成されたウェーハは剛性がなくなるため、その後の工程での取り扱いや搬送が困難になるという問題がある。例えば、裏面の研削により薄くなったウェーハの裏面に金、銀、チタン等からなる金属膜を数十ｎｍ程の厚さに被覆することが困難となる。   However, since the wafer thinly formed by grinding loses rigidity, there is a problem that it is difficult to handle and transport in subsequent processes. For example, it becomes difficult to coat a metal film made of gold, silver, titanium, or the like to a thickness of about several tens of nanometers on the back surface of a wafer thinned by grinding the back surface.

そこで、本出願人は、ウェーハの裏面のうち、デバイスが形成された部分であるデバイス領域の裏面を研削して所望の厚さとし、その外周側は研削せずに残すことによりリング状補強部を形成し、ウェーハの剛性を高めて取り扱いや搬送を容易とした状態で裏面に金属膜を被覆し、その後リング状補強部を除去してダイシングすることにより個々のデバイスに分割するウェーハの加工方法を提案し、特許出願した（特許文献１参照）。   Therefore, the present applicant grinds the back surface of the device region, which is the portion where the device is formed, of the back surface of the wafer to a desired thickness, and leaves the outer peripheral side without grinding to form a ring-shaped reinforcing portion. A wafer processing method that divides the wafer into individual devices by forming and increasing the rigidity of the wafer to cover the backside with a metal film while facilitating handling and transportation, and then removing the ring-shaped reinforcement and dicing. Proposed and filed a patent application (see Patent Document 1).

特開２００７−１９３７９号公報JP 2007-19379 A

しかし、特許文献１に記載されたウェーハの加工方法では、リング状補強部の裏面を研削してリング状補強部を除去する際に、デバイス領域の裏面に被覆された金属膜が研削されないようにするために、研削砥石をリング状補強部に正確に位置合わせしなければならないため、そのための制御が煩雑となるという問題がある。   However, in the wafer processing method described in Patent Document 1, when the back surface of the ring-shaped reinforcing portion is ground to remove the ring-shaped reinforcing portion, the metal film coated on the back surface of the device region is not ground. In order to do so, the grinding wheel must be accurately aligned with the ring-shaped reinforcing portion, and there is a problem that the control for that purpose becomes complicated.

そこで、本発明が解決しようとする課題は、ウェーハのデバイス領域の裏面を研削してその周囲にリング状補強部を形成した後にウェーハの裏面に金属膜を被覆し、その金属膜を損傷させることなく、リング状補強部を容易に除去できるようにすることである。   Therefore, the problem to be solved by the present invention is to grind the back surface of the device region of the wafer and form a ring-shaped reinforcing portion around it, and then coat the back surface of the wafer with a metal film to damage the metal film. The ring-shaped reinforcing portion can be easily removed.

本発明は、複数のデバイスがストリートによって区画されて形成されたデバイス領域とデバイス領域を囲繞する外周余剰領域とが表面に形成されたウェーハの表面側を研削装置のチャックテーブルに保持し、デバイス領域の裏面を研削して凹部を形成すると共に凹部の外周側にリング状補強部を形成するリング状補強部形成工程と、リング状補強部形成工程の後に、ウェーハの裏面に金属膜を被覆する金属膜被覆工程と、金属膜被覆工程の後に、リング状補強部を除去するリング状補強部除去工程とから少なくとも構成されるウェーハの加工方法に関するもので、リング状補強部除去工程では、ウェーハを保持する保持面を有し回転可能なチャックテーブルと、チャックテーブルに保持されたウェーハを研削する研削砥石がリング状に配設された研削ホイールが回転可能に構成された研削手段と、研削手段を保持面に対して垂直方向に研削送りする研削送り手段とを少なくとも備えた研削装置を用い、ウェーハの表面側をチャックテーブルに保持して回転させると共に、研削ホイールを回転させながら研削送り手段による研削送りによって研削砥石の軌跡がリング状補強部に交差するようにウェーハの裏面に研削砥石を作用させてリング状補強部を研削し、リング状補強部の研削面がデバイス領域の裏面に被覆された金属膜の上面から２０μｍ〜１μｍ上の位置に達した時に研削を終了することを特徴とする。   The present invention holds the surface side of a wafer on which a device area formed by dividing a plurality of devices by streets and an outer peripheral surplus area surrounding the device area on the surface is held on a chuck table of a grinding apparatus, The back surface of the wafer is ground to form a concave portion and a ring-shaped reinforcing portion forming step for forming a ring-shaped reinforcing portion on the outer peripheral side of the concave portion, and the metal that covers the metal film on the back surface of the wafer after the ring-shaped reinforcing portion forming step The present invention relates to a wafer processing method comprising at least a ring-shaped reinforcing portion removing step for removing a ring-shaped reinforcing portion after a film coating step and a metal film coating step. In the ring-shaped reinforcing portion removing step, the wafer is held. A chuck table that has a holding surface to rotate and a grinding wheel that grinds the wafer held by the chuck table are arranged in a ring shape. A grinding apparatus having at least a grinding means configured to rotate the grinding wheel and a grinding feed means for grinding and feeding the grinding means in a direction perpendicular to the holding surface is used, and the wafer surface is held on the chuck table. In addition to rotating the grinding wheel, the grinding wheel is applied to the back surface of the wafer so that the locus of the grinding wheel intersects the ring-shaped reinforcing part by grinding feed by the grinding feed means while rotating the grinding wheel to grind the ring-shaped reinforcing part. The grinding is finished when the grinding surface of the ring-shaped reinforcing portion reaches a position 20 μm to 1 μm above the upper surface of the metal film coated on the back surface of the device region.

リング状補強部除去工程の後には、ウェーハの裏面にダイシングテープを貼着してウェーハがダイシングテープを介してダイシングフレームに支持された状態で、ストリートに沿ってウェーハを個々のデバイスに分割する分割工程が実施される。ダイシングテープの厚さは８０μｍ〜１００μｍであることが望ましい。   After the ring-shaped reinforcement removal process, the wafer is divided into individual devices along the street with the dicing tape attached to the back of the wafer and the wafer supported by the dicing frame via the dicing tape. A process is performed. The thickness of the dicing tape is desirably 80 μm to 100 μm.

本発明では、リング状補強部除去工程において、研削砥石の回転軌道がリング状補強部に交差するように研削を行うため、研削砥石をリング状補強部の上方に正確に位置合わせする必要がなく、制御が容易となる。また、リング状補強部の研削面がデバイス領域の裏面に被覆された金属膜の上面から２０μｍ〜１μｍ上の位置となったときに研削を終了するため、デバイス領域の裏面の金属膜に研削砥石が接触することがない。したがって、デバイス領域の裏面の金属膜を損傷させることがない。   In the present invention, in the step of removing the ring-shaped reinforcing portion, the grinding wheel is ground so that the rotation trajectory of the grinding wheel intersects the ring-shaped reinforcing portion, so that it is not necessary to accurately position the grinding wheel above the ring-shaped reinforcing portion. Control becomes easy. Further, since the grinding is finished when the grinding surface of the ring-shaped reinforcing portion reaches a position 20 μm to 1 μm above the upper surface of the metal film coated on the back surface of the device region, the grinding wheel is applied to the metal film on the back surface of the device region. Will not touch. Therefore, the metal film on the back surface of the device region is not damaged.

更に、リング状補強部除去工程の後の分割工程では、リング状補強部の裏面がデバイス領域の金属膜よりも２０μｍ〜１μｍ突出した状態でダイシングテープに貼着されることとなるが、この程度の段差であれば、ダイシングテープの厚さよりも小さく、ダイシングテープは柔軟であるため、ダイシングテープによって当該段差が吸収され、切削の妨げにはならない。   Furthermore, in the dividing step after the ring-shaped reinforcing portion removing step, the back surface of the ring-shaped reinforcing portion is stuck to the dicing tape in a state of protruding 20 μm to 1 μm from the metal film in the device region. If the level difference is less than the thickness of the dicing tape and the dicing tape is flexible, the level difference is absorbed by the dicing tape and does not hinder cutting.

図１に示すように、ウェーハＷの表面Ｗａには、デバイスＤが複数形成されたデバイス領域Ｗ１と、デバイス領域Ｗ１を囲繞する外周余剰領域Ｗ２とが形成されている。デバイス領域Ｗ１においては、縦横に設けられたストリートＳによって区画されてデバイスＤが形成されている。また、図示の例のウェーハＷの外周部には、結晶方位を示す切り欠きであるノッチＮが形成されている。   As shown in FIG. 1, a device region W1 in which a plurality of devices D are formed and an outer peripheral surplus region W2 surrounding the device region W1 are formed on the surface Wa of the wafer W. In the device region W1, a device D is formed by being partitioned by streets S provided vertically and horizontally. Further, a notch N which is a notch indicating a crystal orientation is formed on the outer peripheral portion of the wafer W in the illustrated example.

このウェーハＷ１の表面Ｗａにテープ等の保護部材１を貼着して裏返し、図２に示すように、裏面Ｗｂが露出した状態とする。そして、例えば図３に示す研削装置２を用いて裏面Ｗｂを研削する。この研削装置２には、ウェーハを保持して回転可能なチャックテーブル２０と、ウェーハに対して研削加工を施す研削手段２１とを備えている。研削手段２１には、回転可能でかつ昇降可能なスピンドル２２と、スピンドル２２の先端に装着されスピンドル２２の回転に伴って回転する研削ホイール２３と、研削ホイール２３の下面に固着された研削砥石２４とを備えている。   The protective member 1 such as a tape is attached to the front surface Wa of the wafer W1 and turned over, and the back surface Wb is exposed as shown in FIG. Then, for example, the back surface Wb is ground using the grinding device 2 shown in FIG. The grinding device 2 includes a chuck table 20 that can hold and rotate a wafer, and a grinding means 21 that performs grinding on the wafer. The grinding means 21 includes a rotatable spindle 22 that can be raised and lowered, a grinding wheel 23 that is attached to the tip of the spindle 22 and rotates as the spindle 22 rotates, and a grinding wheel 24 that is fixed to the lower surface of the grinding wheel 23. And.

チャックテーブル２０では保護部材１側が保持され、ウェーハＷの裏面Ｗｂが研削砥石２４と対向した状態となる。そして、チャックテーブル２０の回転に伴いウェーハＷが回転すると共に、スピンドル２２の回転に伴って回転する研削砥石２４が下降してウェーハＷの裏面Ｗｂに接触する。このとき、研削砥石２４は、裏面Ｗｂのうち表面Ｗａのデバイス領域Ｗ１（図１参照）に相当する部分、すなわちデバイス領域Ｗ１の裏面に接触させ、それ以外の部分は研削しないようにする。そうすると、図４及び図５に示すように、研削した部分に凹部Ｗ３が形成され、その外周側において凹部Ｗ３の底面との間で生じた段差部分、すなわち外周余剰領域Ｗ２の裏面にリング状補強部Ｗ４が形成される（リング状補強部形成工程）。リング状補強部Ｗ４の厚さは数百μｍ程度あることが望ましい。一方、デバイス領域Ｗ１の厚さは例えば２０μｍ〜１００μｍ程度まで薄くすることができる。   In the chuck table 20, the protection member 1 side is held, and the back surface Wb of the wafer W is in a state of facing the grinding wheel 24. Then, the wafer W rotates with the rotation of the chuck table 20, and the grinding wheel 24 that rotates with the rotation of the spindle 22 descends to contact the back surface Wb of the wafer W. At this time, the grinding wheel 24 is brought into contact with the portion corresponding to the device region W1 (see FIG. 1) of the front surface Wa of the back surface Wb, that is, the back surface of the device region W1, and the other portions are not ground. Then, as shown in FIGS. 4 and 5, the recess W3 is formed in the ground portion, and a stepped portion formed between the bottom surface of the recess W3 on the outer peripheral side thereof, that is, a ring-shaped reinforcement on the back surface of the outer peripheral surplus region W2. A portion W4 is formed (ring-shaped reinforcing portion forming step). The thickness of the ring-shaped reinforcing portion W4 is preferably about several hundred μm. On the other hand, the thickness of the device region W1 can be reduced to, for example, about 20 μm to 100 μm.

次に、リング状補強部形成工程後のウェーハＷの裏面に、金、銀、チタン等からなる金属膜を被覆する（金属膜被覆工程）。金属膜被覆工程に移るために、図３に示した研削装置２のチャックテーブル２０からウェーハＷ及び保護部材１を取り外す際には、ウェーハＷにリング状補強部Ｗ４が形成されているため、裏面全面が研削されたウェーハをチャックテーブルから取り外す場合と比較すると、取り外しが容易となり、損傷のおそれも少ない。   Next, a metal film made of gold, silver, titanium or the like is coated on the back surface of the wafer W after the ring-shaped reinforcing portion forming process (metal film coating process). When the wafer W and the protective member 1 are removed from the chuck table 20 of the grinding apparatus 2 shown in FIG. 3 in order to move to the metal film coating process, the ring-shaped reinforcing portion W4 is formed on the wafer W. Compared with the case where the wafer whose entire surface is ground is removed from the chuck table, the removal becomes easier and the risk of damage is reduced.

金属膜被覆工程には、例えば図６に示す減圧成膜装置３を用いることができる。この減圧成膜装置３においては、チャンバー３１の内部に静電式にてウェーハＷを保持する保持部３２を備えており、その上方の対向する位置には、金属からなるスパッタ源３４が励磁部材３３に支持された状態で配設されている。このスパッタ源３４には、高周波電源３５が連結されている。また、チャンバー３１の一方の側部には、スパッタガスを導入する導入口３６が設けられ、もう一方の側部には減圧源に連通する減圧口３７が設けられている。   In the metal film coating step, for example, a reduced pressure film forming apparatus 3 shown in FIG. 6 can be used. The vacuum film forming apparatus 3 includes a holding unit 32 that holds the wafer W in an electrostatic manner inside a chamber 31. A sputtering source 34 made of metal is an excitation member at an opposed position above the holding unit 32. It is arranged in a state supported by 33. A high frequency power source 35 is connected to the sputtering source 34. In addition, an inlet 36 for introducing a sputtering gas is provided on one side of the chamber 31, and a decompression port 37 communicating with a decompression source is provided on the other side.

保護部材１側が保持部３２において静電式にて保持されることにより、ウェーハＷの裏面がスパッタ源３４に対向して保持される。そして、励磁部材３３によって磁化されたスパッタ源３４に高周波電源３５から４０ｋＨｚ程度の高周波電力を加え、減圧口３７からチャンバー３１の内部を１０−２Ｐａ〜１０−４Ｐａ程度に減圧して減圧環境にすると共に、導入口３６からアルゴンガスを導入してプラズマを発生させると、プラズマ中のアルゴン原子がスパッタ源３４に衝突して粒子がはじき出されてウェーハＷの裏面に堆積し、図７に示すように、金属膜４が形成される。この金属膜４は、例えば３０〜６０ｎｍ程度の厚さを有する。なお、リング状補強部Ｗ４にマスキングを施して金属膜被覆工程を遂行した場合は、凹部Ｗ３にのみ金属膜４が形成される。金属膜被覆工程は、デバイス領域Ｗ１の裏面側が研削により薄くなった状態で行われるが、ウェーハＷにはリング状補強部Ｗ４が形成されているため、金属膜被覆工程におけるウェーハＷの取り扱いが容易となる。なお、金属膜被覆工程は、蒸着やＣＶＤ等によっても可能である。 By holding the protective member 1 side electrostatically in the holding portion 32, the back surface of the wafer W is held facing the sputtering source 34. Then, a high frequency power of about 40 kHz is applied from the high frequency power source 35 to the sputtering source 34 magnetized by the exciting member 33, and the inside of the chamber 31 is decompressed to about 10 −2 Pa to 10 −4 Pa from the decompression port 37 to reduce the pressure. In addition, when an argon gas is introduced from the introduction port 36 to generate plasma, argon atoms in the plasma collide with the sputtering source 34 and particles are ejected and deposited on the back surface of the wafer W, as shown in FIG. Thus, the metal film 4 is formed. The metal film 4 has a thickness of about 30 to 60 nm, for example. In addition, when masking is applied to the ring-shaped reinforcing portion W4 and the metal film coating step is performed, the metal film 4 is formed only in the concave portion W3. The metal film coating process is performed in a state where the back surface side of the device region W1 is thinned by grinding. However, since the ring-shaped reinforcing portion W4 is formed on the wafer W, the wafer W can be easily handled in the metal film coating process. It becomes. The metal film coating step can also be performed by vapor deposition, CVD, or the like.

金属膜被覆工程終了後は、リング状補強部Ｗ４を除去する（リング状補強部除去工程）。リング補強部Ｗ４の除去には、例えば、図８に示す研削装置５を使用することができる。この研削装置５は、ウェーハＷを保持する保持面６０を有し回転及び水平方向に移動可能なチャックテーブル６と、チャックテーブル６に保持されたウェーハＷを研削する研削手段７と、研削手段７を保持面６０に対して垂直方向に研削送りする研削送り手段８とを備えている。   After completion of the metal film coating step, the ring-shaped reinforcing portion W4 is removed (ring-shaped reinforcing portion removing step). For example, a grinding device 5 shown in FIG. 8 can be used to remove the ring reinforcing portion W4. The grinding device 5 has a holding surface 60 for holding a wafer W, a chuck table 6 that can be rotated and moved in the horizontal direction, a grinding means 7 for grinding the wafer W held on the chuck table 6, and a grinding means 7 Is provided with grinding feed means 8 for grinding feed in a direction perpendicular to the holding surface 60.

研削手段７は、垂直方向の軸心を有するスピンドル７０と、スピンドル７０を回転可能に支持するスピンドルハウジング７１と、スピンドル７０の先端に形成されたホイールマウント７２と、ホイールマウント７２に固定された研削ホイール７３と、研削ホイール７３の下面に固着された研削砥石７４と、スピンドル７０を駆動するモータ７５とから構成される。   The grinding means 7 includes a spindle 70 having a vertical axis, a spindle housing 71 that rotatably supports the spindle 70, a wheel mount 72 formed at the tip of the spindle 70, and a grinding fixed to the wheel mount 72. The wheel 73, the grinding wheel 74 fixed to the lower surface of the grinding wheel 73, and a motor 75 that drives the spindle 70 are configured.

研削送り手段８は、垂直方向に配設されたボールネジ８０と、ボールネジ８０の一端に連結されたパルスモータ８１と、ボールネジ８０と平行に配設された一対のガイドレール８２と、内部のナット（図示せず）がボールネジ８０に螺合すると共に側部がガイドレール８２に摺接する昇降板８３と、昇降板８３に連結されスピンドルハウジング７１を支持する支持部８４とから構成され、パルスモータ８１に駆動されてボールネジ８０が回動することにより、昇降板８３がガイドレール８２にガイドされて昇降し、これに伴い支持部８４及び研削手段７が昇降する構成となっており、図示しない制御部がパルスモータ８１に供給するパルスによって、研削砥石７４の上下方向の位置をμｍ単位で精密に制御することができる。   The grinding feed means 8 includes a ball screw 80 arranged in the vertical direction, a pulse motor 81 connected to one end of the ball screw 80, a pair of guide rails 82 arranged in parallel to the ball screw 80, and an internal nut ( (Not shown) includes a lift plate 83 that is screwed to the ball screw 80 and whose side portion is in sliding contact with the guide rail 82, and a support portion 84 that is connected to the lift plate 83 and supports the spindle housing 71. When the ball screw 80 is driven to rotate, the elevating plate 83 is guided by the guide rail 82 to move up and down, and the support unit 84 and the grinding means 7 are moved up and down accordingly. By the pulse supplied to the pulse motor 81, the vertical position of the grinding wheel 74 can be precisely controlled in units of μm.

図７に示したようにリング状補強部Ｗ４が形成され金属膜４が被覆されたウェーハＷは、図９に示すように、保護部材１側（ウェーハＷの表面側）がチャックテーブル６の保持面６０に保持される。そして、チャックテーブル６を回転させると共に、モータ７５の駆動により研削ホイール７３を回転させながら研削送り手段８による研削送りによって研削手段７を下降させ、図９に示すように、回転する研削砥石７４の軌跡がウェーハＷのリング状補強部Ｗ４に交差するように作用させてリング状補強部Ｗ４を研削していく。そして、図１０に示すように、デバイス領域Ｗ１の裏面の金属膜４の上面４ａより２０μｍ〜１μｍほど上の位置まで外周余剰領域Ｗ４を研削して研削を終了する（リング状補強部除去工程）。すなわち、リング状補強部Ｗ４の研削面Ｗ４ａが金属膜４の上面４ａよりも２０μｍ〜１μｍ上に位置するようになるまで研削を行う。   As shown in FIG. 7, the wafer W in which the ring-shaped reinforcing portion W4 is formed and the metal film 4 is coated is held on the chuck table 6 on the protective member 1 side (surface side of the wafer W) as shown in FIG. It is held on the surface 60. Then, while rotating the chuck table 6 and rotating the grinding wheel 73 by driving the motor 75, the grinding means 7 is lowered by the grinding feed by the grinding feed means 8, and the rotating grinding wheel 74 is rotated as shown in FIG. The ring-shaped reinforcing portion W4 is ground by causing the locus to intersect with the ring-shaped reinforcing portion W4 of the wafer W. Then, as shown in FIG. 10, the outer peripheral surplus region W4 is ground to a position about 20 μm to 1 μm above the upper surface 4a of the metal film 4 on the back surface of the device region W1, and the grinding is finished (ring-shaped reinforcing portion removing step). . That is, grinding is performed until the grinding surface W4a of the ring-shaped reinforcing portion W4 is positioned 20 μm to 1 μm above the upper surface 4a of the metal film 4.

このように、研削砥石７４の下面が金属膜４の上面４ａより２０μｍ〜１μｍほど上の位置になった時点で研削送り手段８による研削送りを止めて研削を終了することにより、研削砥石７４が金属膜４に接触することがないため、金属膜４を損傷させることがない。また、研削砥石７４の回転軌道がリング状補強部Ｗ４に交差するように研削砥石７４あてがって研削を行うため、リング状補強部Ｗ４のみの上方に研削砥石７４を位置合わせする必要がなく、チャックテーブル６の水平方向の位置制御も容易となる。   As described above, when the lower surface of the grinding wheel 74 is positioned about 20 μm to 1 μm above the upper surface 4 a of the metal film 4, the grinding feed by the grinding feed means 8 is stopped and the grinding is finished, whereby the grinding wheel 74 is Since the metal film 4 is not contacted, the metal film 4 is not damaged. Further, since grinding is performed by applying the grinding wheel 74 so that the rotation path of the grinding wheel 74 intersects the ring-shaped reinforcing portion W4, it is not necessary to align the grinding wheel 74 above the ring-shaped reinforcing portion W4, and the chuck The horizontal position control of the table 6 is also facilitated.

リング状補強部除去工程終了後は、図１１に示すように、ウェーハＷをダイシングテープＴに貼着し、ダイシングテープＴの縁部をリング状のフレームＦに貼着することにより、ウェーハＷがダイシングテープＴを介してダイシングフレームＦによって支持された状態とすると共に、ウェーハＷの表面Ｗ１に貼着されていた保護部材１を剥離する。ダイシングテープＴは、例えば８０μｍ〜１００μｍほどの厚さを有するポリオレフィン等からなる柔軟な材質により形成されている。こうして、ダイシングテープＴを介してダイシングフレームＦに支持されたウェーハＷは、例えば図１２に示す切削装置９のチャックテーブル９０に搬送され、保持される。   After completion of the ring-shaped reinforcing portion removing step, the wafer W is bonded to the dicing tape T and the edge of the dicing tape T is bonded to the ring-shaped frame F as shown in FIG. While being supported by the dicing frame F via the dicing tape T, the protective member 1 attached to the surface W1 of the wafer W is peeled off. The dicing tape T is formed of a flexible material made of polyolefin or the like having a thickness of about 80 μm to 100 μm, for example. Thus, the wafer W supported by the dicing frame F via the dicing tape T is conveyed and held on the chuck table 90 of the cutting apparatus 9 shown in FIG. 12, for example.

切削装置９は、ウェーハＷを保持して回転可能なチャックテーブル９０とウェーハＷに対して切削を施す切削手段９１とを備えている。切削手段９１は、ハウジング９１０によって回転可能に支持されたスピンドル９１１の先端部に切削ブレード９１２が装着されて構成されている。チャックテーブル９０は、加工送り手段９２によって駆動されてＸ軸方向に移動可能となっている。また、切削手段９１は、割り出し送り手段９３によって駆動されてＹ軸方向に移動可能であると共に切り込み送り手段９４によって駆動されてＺ軸方向に移動可能となっている。   The cutting device 9 includes a chuck table 90 that can hold and rotate the wafer W, and a cutting means 91 that cuts the wafer W. The cutting means 91 is configured by attaching a cutting blade 912 to the tip of a spindle 911 that is rotatably supported by a housing 910. The chuck table 90 is driven by the machining feed means 92 and can move in the X-axis direction. The cutting means 91 is driven by the index feed means 93 and can move in the Y-axis direction, and is also driven by the cut-in feed means 94 and can move in the Z-axis direction.

チャックテーブル９０には、ウェーハＷに貼着されたダイシングテープＴ側が保持される。このとき、図１３に示すように、リング状補強部Ｗ４の上面Ｗ４ａとデバイス領域の裏面の金属膜４の上面（研削面）４ａとの段差は２０μｍ〜１μｍ程度であり、この段差は、厚さが８０μｍ〜１００μｍであり柔軟なダイシングテープＴによって吸収されるため、ウェーハＷの表面Ｗａはフラットな状態となり、切削に支障は生じない。   The dicing tape T side attached to the wafer W is held on the chuck table 90. At this time, as shown in FIG. 13, the step between the upper surface W4a of the ring-shaped reinforcing portion W4 and the upper surface (grinding surface) 4a of the metal film 4 on the back surface of the device region is about 20 μm to 1 μm. Since the thickness is 80 μm to 100 μm and is absorbed by the flexible dicing tape T, the surface Wa of the wafer W is flat, and cutting is not hindered.

このようにしてウェーハＷがチャックテーブル９０に保持されると、チャックテーブル９０が＋Ｘ方向に移動すると共に、切削ブレード９１２が高速回転しながら切削手段９１が下降して切削すべきストリートに切り込むことにより、検出したストリートが切削される。また、ストリート間隔ずつ切削手段９１をＹ軸方向にインデックス送りしながら切削を繰り返すことにより、同方向のストリートがすべて切削される。更に、チャックテーブル９０を９０度回転させてから同様の切削を行うと、すべてのストリートが切削され、個々のデバイスＤに分割される。   When the wafer W is held on the chuck table 90 in this way, the chuck table 90 moves in the + X direction, and the cutting means 91 descends while the cutting blade 912 rotates at a high speed to cut into the street to be cut. , The detected street is cut. Further, by repeating the cutting while indexing the cutting means 91 in the Y-axis direction at every street interval, all the streets in the same direction are cut. Further, when the same cutting is performed after the chuck table 90 is rotated 90 degrees, all streets are cut and divided into individual devices D.

ウェーハ及び保護部材を示す斜視図である。It is a perspective view which shows a wafer and a protection member. 表面に保護部材が貼着されたウェーハを示す斜視図である。It is a perspective view which shows the wafer by which the protection member was stuck on the surface. リング状補強部形成工程を示す斜視図である。It is a perspective view which shows a ring-shaped reinforcement part formation process. リング状補強部形成工程終了後のウェーハを示す斜視図である。It is a perspective view which shows the wafer after completion | finish of a ring-shaped reinforcement part formation process. リング状補強部形成工程終了後のウェーハを示す断面図である。It is sectional drawing which shows the wafer after completion | finish of a ring-shaped reinforcement part formation process. 減圧成膜装置の一例を略示的に示す断面図である。It is sectional drawing which shows an example of a reduced pressure film-forming apparatus roughly. 金属膜被覆工程終了後のウェーハを示す断面図である。It is sectional drawing which shows the wafer after completion | finish of a metal film coating process. 研削装置の一例を示す斜視図である。It is a perspective view which shows an example of a grinding device. リング状補強部除去工程を示す斜視図である。It is a perspective view which shows a ring-shaped reinforcement part removal process. リング状補強部除去工程終了後のウェーハを示す断面図である。It is sectional drawing which shows the wafer after completion | finish of a ring-shaped reinforcement part removal process. ウェーハをダイシングテープに貼着すると共に保護部材を剥離する状態を示す斜視図である。It is a perspective view which shows the state which peels a protection member while sticking a wafer to a dicing tape. 切削装置の一例を示す斜視図である。It is a perspective view which shows an example of a cutting device. ダイシングテープに対するウェーハの貼着状態を拡大して示す断面図である。It is sectional drawing which expands and shows the sticking state of the wafer with respect to a dicing tape.

符号の説明Explanation of symbols

Ｗ：ウェーハ
Ｗａ：表面
Ｗ１：デバイス領域
Ｓ：ストリート Ｄ：デバイス
Ｗ２：外周余剰領域
Ｗｂ：裏面
Ｗ３：凹部
Ｗ４：リング状補強部 Ｗ４ａ：研削面（上面）
Ｎ：ノッチ
Ｔ：ダイシングテープ Ｆ：ダイシングフレーム
１：保護部材
２：研削装置
２０：チャックテーブル ２１：研削手段 ２２：スピンドル ２３：研削ホイール
２４：研削砥石
３：減圧成膜装置
３１：チャンバー ３２：保持部 ３３：励磁部材 ３４：スパッタ源
３５：高周波電源 ３６：導入口 ３７：減圧口
４：金属膜 ４ａ：上面
５：研削装置
６；チャックテーブル ６０：保持面
７：研削手段
７０：スピンドル ７１：スピンドルハウジング ７２：ホイールマウント
７３：研削ホイール ７４：研削砥石 ７５：モータ
８：研削送り手段
８０：ボールネジ ８１：パルスモータ ８２：ガイドレール ８３：昇降板
８４：支持部
９：切削装置
９０：チャックテーブル
９１：切削手段
９１０：ハウジング ９１１：スピンドル ９１２：切削ブレード
９２：加工送り手段
９３：割り出し送り手段
９４：切り込み送り手段 W: Wafer Wa: Surface W1: Device area
S: Street D: Device W2: Peripheral surplus region Wb: Back surface W3: Recessed portion W4: Ring-shaped reinforcing portion W4a: Grinding surface (upper surface)
N: Notch T: Dicing tape F: Dicing frame 1: Protective member 2: Grinding device 20: Chuck table 21: Grinding means 22: Spindle 23: Grinding wheel 24: Grinding wheel 3: Depressurized film forming device 31: Chamber 32: Holding Part 33: Exciting member 34: Sputtering source 35: High frequency power source 36: Introducing port 37: Depressurizing port 4: Metal film 4a: Upper surface 5: Grinding device 6; Chuck table 60: Holding surface 7: Grinding means 70: Spindle 71: Spindle Housing 72: Wheel mount 73: Grinding wheel 74: Grinding wheel 75: Motor 8: Grinding feed means 80: Ball screw 81: Pulse motor 82: Guide rail 83: Lift plate 84: Supporting part 9: Cutting device 90: Chuck table 91: Cutting means 910: Housing 911: Spindle 912: Cutting Blade 92: Processing feed means 93: Index feed means 94: Cutting feed means

Claims (3)

複数のデバイスがストリートによって区画されて形成されたデバイス領域と該デバイス領域を囲繞する外周余剰領域とが表面に形成されたウェーハの該表面側を研削装置のチャックテーブルに保持し、該デバイス領域の裏面を研削して凹部を形成すると共に該凹部の外周側にリング状補強部を形成するリング状補強部形成工程と、
該リング状補強部形成工程の後に、該ウェーハの裏面に金属膜を被覆する金属膜被覆工程と、
該金属膜被覆工程の後に、該リング状補強部を除去するリング状補強部除去工程と
から少なくとも構成されるウェーハの加工方法であって、
該リング状補強部除去工程では、
ウェーハを保持する保持面を有し回転可能なチャックテーブルと、該チャックテーブルに保持されたウェーハを研削する研削砥石がリング状に配設された研削ホイールが回転可能に構成された研削手段と、該研削手段を該保持面に対して垂直方向に研削送りする研削送り手段とを少なくとも備えた研削装置を用い、
該ウェーハの表面側を該チャックテーブルに保持して回転させると共に、該研削ホイールを回転させながら該研削送り手段による研削送りによって該研削砥石の軌跡が該リング状補強部に交差するように該ウェーハの裏面に該研削砥石を作用させて該リング状補強部を研削し、該リング状補強部の研削面が該デバイス領域の裏面に被覆された金属膜の上面から２０μｍ〜１μｍ上の位置に達した時に研削を終了する
ウェーハの加工方法。 A surface of a wafer on which a device region formed by dividing a plurality of devices by streets and an outer peripheral surplus region surrounding the device region is formed is held on a chuck table of a grinding apparatus, and the device region A ring-shaped reinforcing portion forming step of forming a concave portion by grinding the back surface and forming a ring-shaped reinforcing portion on the outer peripheral side of the concave portion;
After the ring-shaped reinforcing portion forming step, a metal film coating step for coating the back surface of the wafer with a metal film,
A wafer processing method comprising at least a ring-shaped reinforcing portion removing step of removing the ring-shaped reinforcing portion after the metal film coating step,
In the ring-shaped reinforcing portion removing step,
A rotatable chuck table having a holding surface for holding a wafer, and a grinding means configured to rotate a grinding wheel in which a grinding wheel for grinding the wafer held on the chuck table is arranged in a ring shape; Using a grinding apparatus comprising at least grinding feed means for grinding and feeding the grinding means in a direction perpendicular to the holding surface,
The wafer surface is rotated while being held by the chuck table, and the locus of the grinding wheel intersects the ring-shaped reinforcing portion by grinding feed by the grinding feed means while rotating the grinding wheel. The ring-shaped reinforcing portion is ground by applying the grinding wheel to the back surface of the device, and the ground surface of the ring-shaped reinforcing portion reaches a position 20 μm to 1 μm above the upper surface of the metal film coated on the back surface of the device region. The wafer processing method that finishes grinding when finished. 前記リング状補強部除去工程の後に、前記ウェーハの裏面にダイシングテープを貼着して該ウェーハが該ダイシングテープを介してダイシングフレームに支持された状態で、前記ストリートに沿って該ウェーハを個々のデバイスに分割する分割工程が実施される
請求項１に記載のウェーハの加工方法。 After the ring-shaped reinforcing portion removing step, a dicing tape is attached to the back surface of the wafer, and the wafer is supported on the dicing frame via the dicing tape. The wafer processing method according to claim 1, wherein a dividing step of dividing the device is performed. 前記ダイシングテープの厚さは８０μｍ〜１００μｍである請求項２に記載のウェーハの加工方法。   The wafer processing method according to claim 2, wherein the dicing tape has a thickness of 80 μm to 100 μm.
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