WO2021248951A1

WO2021248951A1 - Substrate thinning method, substrate thinning device, and operating method thereof

Info

Publication number: WO2021248951A1
Application number: PCT/CN2021/080251
Authority: WO
Inventors: 路新春; 赵德文; 刘远航; 王江涛; 李长坤
Original assignee: 清华大学; 华海清科股份有限公司
Priority date: 2020-06-10
Filing date: 2021-03-11
Publication date: 2021-12-16
Also published as: CN111430230A; CN111430230B

Abstract

A substrate thinning method, comprising: grinding a substrate; and after grinding is completed, carrying out chemical mechanical polishing on the substrate by using a bearing head (234) capable of adjusting the pressure according to thickness distribution partitions of the substrate (S3). After grinding is completed and before chemical mechanical polishing is carried out, the thickness distribution of the ground substrate is measured (S31), and a loading pressure of the bearing head (234) on each partition of the substrate is adjusted according to the thickness distribution of the substrate (S32); or in the chemical mechanical polishing period, the thickness distribution of the substrate is measured on line (S33), and the loading pressure of the bearing head (234) on each partition of the substrate is adjusted according to the thickness distribution of the substrate. By combining the grinding process and the chemical mechanical polishing process, the most economical and effective technical route for processing a substrate is provided, and chemical mechanical polishing is performed according to the thickness distribution of the substrate, so that the thickness uniformity of the substrate is improved, and the technical support can be provided for a stacking process of ultra-high-density semiconductors. Also provided are a substrate thinning device and an operating method thereof.

Description

Substrate thinning method, substrate thinning equipment and operation method thereof

Technical field

The present disclosure relates to the technical field of semiconductor substrate processing, in particular to a substrate thinning method, a substrate thinning device and an operation method thereof.

Background technique

In the post-process stage of integrated circuit/semiconductor (Integrated Circuit, "IC") manufacturing, in order to reduce the mounting height of the package, reduce the size of the chip package, improve the thermal diffusion efficiency, electrical performance, and mechanical performance of the chip, and reduce the chip The substrate needs to be back-thinned before subsequent packaging, and the chip thickness after the back-thinning can even reach less than 5% of the initial thickness.

With the rapid development of IC manufacturing technology, in order to increase IC chip output and reduce unit manufacturing costs, substrates tend to be larger in diameter. However, the existing equipment is mostly used for processing small-sized substrates, which can no longer meet the requirements for processing large-diameter substrates. As the substrates become larger in diameter, the equipment used to process the substrates also tends to be larger, often exceeding the available site area, and difficult to transport and install.

At the same time, with the improvement of IC performance, higher requirements are placed on the quality of the substrate, and the surface accuracy and surface integrity, surface roughness, and surface damage degree of the substrate are required to meet high standards. However, the increase in the size of the substrate brings about a series of problems such as warping and deformation of the substrate, difficulty in ensuring the surface accuracy and surface roughness, and low processing efficiency. The existing processing technology and equipment cannot meet the requirements. All in all, the thinning process for large-sized substrates in the prior art has the problems of poor processing effect and low surface quality.

Summary of the invention

The present disclosure provides a substrate thinning method, a substrate thinning device and an operating method thereof, and aims to solve at least one of the technical problems existing in the prior art.

A first aspect of the present disclosure provides a method for thinning a substrate. The method for thinning a substrate includes the following steps: grinding the substrate, including rough grinding and/or fine grinding the substrate And when the grinding is completed, the substrate is chemically mechanically polished with a load-bearing head that can adjust the loading pressure according to the thickness distribution of the substrate; wherein, after the completion of the grinding of the substrate and after the Before the chemical mechanical polishing of the substrate, measure the thickness distribution of the ground substrate, and adjust the loading pressure of the carrier head to each partition of the substrate according to the thickness distribution of the substrate; During the chemical mechanical polishing, the thickness distribution of the substrate is measured on-line, and the loading pressure of the carrying head on each partition of the substrate is adjusted according to the thickness distribution of the substrate.

After the substrate is ground, the ground substrate is subjected to chemical mechanical polishing. Among them, grinding may include rough grinding and fine grinding, or only one of them, such as fine grinding. In the case of fine grinding, such as ultra-precision grinding, rapid material removal can be achieved, with a large amount of material removal, low cost and high efficiency. Chemical mechanical polishing can improve the surface quality of the substrate and achieve an ultra-flat and ultra-smooth surface. Considering multiple factors such as processing efficiency, processing cost, surface quality, pollution degree, etc., the combination of ultra-precision grinding and chemical mechanical polishing technology is the most economical and effective technical route. Through chemical mechanical polishing according to the thickness distribution of the substrate, the thickness uniformity of the substrate is improved, which can provide technical support for the ultra-high-density semiconductor stacking process, and is an important component of the development of semiconductor high-density packaging.

After the substrate is ground and before the chemical mechanical polishing is performed on the substrate, the thickness distribution of the ground substrate can be measured, and the bearing head can be adjusted according to the thickness distribution of the substrate. Describe the loading pressure of each sub-area of the substrate. For example, in the case where the grinding includes rough grinding and fine grinding or only fine grinding, it is possible to measure after the fine grinding of the substrate and before the chemical mechanical polishing of the substrate The thickness distribution of the substrate after the fine grinding is completed, and the loading pressure of the carrying head on each partition of the substrate is adjusted according to the thickness distribution of the substrate. For example, after finishing the fine grinding, the thickness distribution of the substrate can be measured by the measuring unit at the fine grinding station at the fine grinding station where the substrate is finely ground, and when the substrate is subsequently chemically and mechanically polished, the load The head adjusts the loading pressure on each subarea of the substrate according to the thickness distribution of the substrate measured here.

During the chemical-mechanical polishing of the substrate, the thickness distribution of the substrate may be measured online, and the loading pressure of the carrier head on each partition of the substrate may be adjusted according to the thickness distribution of the substrate measured online. In this way, according to the thickness distribution of the substrate during polishing, the loading pressure on each partition of the substrate is adjusted in real time, which realizes the closed-loop control of the chemical mechanical polishing of the substrate and improves the thickness uniformity of the processed substrate.

According to the first aspect of the present disclosure, preferably, adjusting the loading pressure of the carrying head to each subarea of the substrate according to the thickness distribution of the substrate may include: calculating each subarea of the substrate based on the thickness distribution of the substrate According to the average thickness of each partition, the load-bearing head applies a corresponding load pressure in each partition.

According to the first aspect of the present disclosure, preferably, a non-contact optical measuring instrument can be used to obtain the thickness distribution of the substrate. For example, a non-contact optical measuring instrument can be used to obtain the thickness distribution of the substrate at the fine grinding station for fine grinding.

According to the first aspect of the present disclosure, preferably, when the substrate is ground, the surface to be thinned of the substrate is placed upward to contact a grinding tool located above the substrate, and the substrate is During chemical mechanical polishing, the side of the substrate to be thinned is placed downward to contact the polishing pad located under the substrate, wherein after the substrate is finished grinding and before the substrate is chemically mechanically polished, the The substrate is turned over. In the present disclosure, "grinding tool" refers to a tool used to grind the substrate, such as a grinding wheel. In the case of rough grinding, the "grinding tool" may be a rough grinding tool for rough grinding the substrate, such as a rough grinding wheel; in the case of fine grinding, the "grinding tool" It may be a fine grinding tool for fine grinding the substrate, for example, a fine grinding wheel.

According to the first aspect of the present disclosure, preferably, the surface to be thinned may be the back surface of the substrate, and the back surface is the opposite side of the device surface on which the electronic circuit is formed.

According to the first aspect of the present disclosure, preferably, the rough grinding may include: measuring the thickness of the substrate online; and performing first light grinding when the thickness of the substrate reaches a first preset range. Preferably, the first light grinding includes: stopping the feeding of a rough grinding tool, and allowing the rough grinding tool to perform light grinding on the substrate for a first preset time. Through smooth grinding, the elastic deformation caused by the feeding of the grinding tool is eliminated, and the accuracy and straightness of the substrate are ensured.

According to the first aspect of the present disclosure, preferably, the fine grinding may include: measuring the fine grinding thickness distribution of the substrate and adjusting the inclination angle of the fine grinding related parts according to the fine grinding thickness distribution. Further preferably, when the thickness of the substrate reaches an intermediate target value, the fine grinding thickness distribution of the substrate can be measured and the inclination angle of the fine grinding related parts can be adjusted according to the fine grinding thickness distribution. Further preferably, the fine grinding may further include: making the fine grinding tool perform fine grinding at an initial feed rate; when the thickness of the substrate reaches an intermediate target value, suspending the fine grinding; measuring the The fine grinding thickness distribution of the substrate and adjusting the inclination angle of the fine grinding related parts according to the fine grinding thickness distribution; making the fine grinding tool perform fine grinding at the second feed speed; and when the substrate is When the thickness reaches the second preset range, the second smooth grinding is performed.

Preferably, the second light grinding may include: stopping the feeding of the fine grinding tool, and allowing the fine grinding tool to perform light grinding on the substrate for a second preset time.

According to the first aspect of the present disclosure, preferably, the adjusting the inclination angle of the finishing grinding-related parts may include: adjusting the inclination angle of the finishing grinding tool, adjusting the inclination angle of the holder for holding the substrate, and adjusting the fine grinding At least one of the positional relationship between the grinding tool and the shaft of the holder. In the present disclosure, the fine grinding-related components may include fine grinding tools, holders, and related connection mechanisms. "Holding member" refers to a device used to hold the substrate at a processing station (here, for example, a fine grinding station), and may include, for example, a workbench located at the processing station and a device for adsorbing the substrate on The suction parts on the workbench, such as suction cups, etc. Further preferably, the positional relationship between the axis of the fine grinding tool and the suction member for adsorbing the substrate, such as a suction cup, can be adjusted according to the distribution of the fine grinding thickness.

According to the first aspect of the present disclosure, preferably, the chemical mechanical polishing can be used to improve the total thickness deviation of the substrate. Preferably, after the chemical mechanical polishing, the total thickness deviation of the substrate can be reduced to less than 70% after the grinding, for example, can be reduced to less than 70% after the fine grinding. Preferably, after the substrate is sequentially subjected to the grinding and the chemical mechanical polishing treatment, the total thickness deviation of the substrate may not be greater than 1 μm.

According to the first aspect of the present disclosure, preferably, the substrate thinning method may further include: transporting the substrate to be thinned to a unit for grinding in one direction by using a moving buffer portion capable of bidirectional movement; and Using the moving buffer portion, the ground substrate is transported back from the unit for grinding in the other direction opposite to the one direction. The unit for performing grinding may include a device for performing rough grinding and/or a device for performing rough grinding.

Preferably, the mobile buffer portion and the unit for chemical mechanical polishing may be arranged in parallel along the length direction of the device.

Preferably, the mobile buffer unit can simultaneously transport the substrate to be thinned to the unit for grinding and return the ground substrate from the unit for grinding.

A second aspect of the present disclosure provides a substrate thinning device, the substrate thinning device includes: a device front-end module for realizing the in and out of the substrate, the device front-end module is arranged at the front end of the substrate thinning device; A grinding module for grinding the substrate, the grinding includes rough grinding and/or fine grinding, the grinding module is provided at the end of the substrate thinning device; and a polishing module for After the grinding is completed, the substrate is chemically mechanically polished with a carrying head capable of adjusting the loading pressure according to the thickness distribution of the substrate, wherein the polishing module is arranged in the equipment front-end module and the grinding Between the modules, wherein the loading pressure of the carrier head on each partition of the substrate is adjusted according to the thickness distribution of the substrate measured after the grinding is completed and before the chemical mechanical polishing is performed, or according to the measurement of the substrate The thickness distribution of the substrate measured online during chemical mechanical polishing is adjusted.

Existing equipment is mostly used to process small-sized substrates, such as substrates of about 200 mm. The equipment occupies a small area and does not require much space. However, as substrates gradually become larger in size, resulting in the gradual increase in device size, the demand for space is also increasing.

Compared with the prior art, according to the present disclosure, a compact substrate thinning device is provided. Compared with the process flow of feeding the substrate, grinding, polishing, and sending the substrate, the modules of the device are arranged in sequence, so that the substrate Enter and exit at the same end of the equipment, arrange the larger grinding module at one end of the equipment, use the space between the front-end module of the equipment and the grinding module to arrange a chemical mechanical polishing unit that is slightly smaller than the grinding module, and use the space in the middle The space layout of the device realizes the device that transports the substrate between the equipment front-end module, the grinding module, and the chemical mechanical polishing unit, which makes full use of the space and greatly reduces the size of the equipment. In addition, comprehensively considering multiple factors such as processing efficiency, processing cost, surface quality, pollution degree, etc., combining ultra-precision grinding and chemical mechanical polishing processes into one device provides the most economical and effective technical route. Moreover, by performing chemical mechanical polishing according to the thickness distribution of the substrate, the thickness uniformity of the substrate is greatly improved.

According to the second aspect of the present disclosure, preferably, the polishing module may include: a mobile buffer part capable of bidirectional movement, and the mobile buffer part can transport the substrate from a first position close to the equipment front end module to close The second position of the grinding module is transported from the second position back to the first position; and a chemical mechanical polishing unit arranged in parallel with the mobile buffer portion along the length direction of the device.

According to the second aspect of the present disclosure, preferably, the substrate thinning device may include a non-contact optical measuring instrument for measuring the thickness distribution of the substrate.

According to the second aspect of the present disclosure, preferably, the mobile buffer section can simultaneously transport one substrate from the first position to the second position and another substrate from the second position to the second position. One location. Further preferably, the mobile buffer unit includes at least two mobile buffer members arranged in parallel, and one of the at least two mobile buffer members transports a substrate from the first position to the second position , And the other one of the at least two mobile buffers transports another substrate from the second position to close to the first position. Preferably, the at least two mobile buffering elements may be arranged in parallel on a horizontal surface of the same height, or sequentially arranged up and down on a horizontal surface of different heights.

According to the second aspect of the present disclosure, preferably, the mobile buffer portion may include a fixing mechanism, a centering mechanism, and a horizontal moving mechanism. The substrate is positioned to a position concentric with the fixing mechanism, and the fixing mechanism is connected with the horizontal moving mechanism so that the fixing mechanism carries the substrate to move horizontally.

According to the second aspect of the present disclosure, preferably, the equipment front-end module may include a first transfer unit for taking out a substrate, and the polishing module may further include a second transfer unit and a third transfer unit having the mobile buffer section. Unit, and a post-processing unit for post-processing the chemically mechanically polished substrate, wherein the third transfer unit is connected to the first transfer unit, the second transfer unit, the chemical mechanical polishing unit, and The post-processing units are all adjacent to each other and are used to transfer substrates between the first transfer unit, the second transfer unit, the chemical mechanical polishing unit, and the post-processing unit.

According to the second aspect of the present disclosure, preferably, the third transfer unit may include a dry robot for placing the substrate to the mobile buffer part and a wet robot for taking the substrate from the mobile buffer part, so The dry manipulator and the wet manipulator are arranged on the same manipulator base and can rotate around the manipulator base.

According to the second aspect of the present disclosure, preferably, the dry manipulator and the wet manipulator may be at different heights to prevent interference between the dry manipulator and the wet manipulator when they move.

According to the second aspect of the present disclosure, preferably, the dry robot and the wet robot can be controlled to operate at the same time to improve the efficiency of transporting the substrate.

According to the second aspect of the present disclosure, preferably, the dry manipulator may be spaced in the vertical direction from the mobile buffer part during the process of placing the substrate on the mobile buffer part, so that the dry manipulator does not directly contact and move. The buffer part is prevented from being contaminated when the mobile buffer part is also used to transport wet substrates.

According to the second aspect of the present disclosure, preferably, the carrier head may include a plurality of annular and concentric adjustable pressure chambers, and the plurality of adjustable pressure chambers divide the surface of the substrate into corresponding multiple pressure chambers. For each partition, the pressure applied to the plurality of partitions can be adjusted by separately controlling the pressure in the plurality of adjustable pressure chambers. Further preferably, the number of the plurality of adjustable pressure chambers is at least seven.

According to the second aspect of the present disclosure, preferably, the carrying head may include: an upper structure connected to the drive shaft of the carrying head; and a lower structure connected to the upper structure through a flexible connector. The lower structure includes: a balance frame; a base; an elastic membrane for adsorbing the substrate and applying downward pressure to the substrate, the elastic membrane is fixed on the lower surface of the base, the plurality of The pressure regulating chamber is provided inside the elastic membrane; and a retaining ring for holding the substrate below the elastic membrane to prevent the substrate from slipping out, the retaining ring is fixed on the lower surface of the base Is arranged on the outer side of the elastic membrane on and around the elastic membrane, and the retaining ring protrudes from the elastic membrane in the axial direction.

According to the second aspect of the present disclosure, preferably, the equipment front-end module may include a first transfer unit for sending the substrate to the polishing module or receiving the substrate from the polishing module, and the first The transmission unit includes a pick-and-place manipulator and a first transmission track. The pick-and-place manipulator has a base and an extendable or retractable mechanical arm that can rotate on the base, and the base is slidably arranged On the first transmission track.

According to the second aspect of the present disclosure, preferably, the equipment front-end module may include a substrate storage unit that is provided on the front-end side of the substrate thinning equipment and includes a plurality of front-opening substrate transfer boxes, The front-opening substrate transfer box respectively includes a front-opening container capable of accommodating a substrate and a front-opening door structure, and the front-opening door structure is airtightly connected to the outer wall of the substrate thinning equipment.

According to the second aspect of the present disclosure, preferably, the post-processing unit may be disposed between the chemical mechanical polishing unit and the equipment front-end module and is connected to the first transfer unit, the third transfer unit, and the The chemical mechanical polishing units are adjacent, and a first opening and closing window is provided on the side surface of the post-processing unit facing the first transfer unit to facilitate the first transfer unit to take and place the substrate to the post-processing unit, The side surface of the post-processing unit facing the third transfer unit is provided with a second opening and closing window to facilitate the third transfer unit to take and place the substrate to the post-processing unit.

According to the second aspect of the present disclosure, preferably, the post-processing unit may be a single-chamber device that integrates cleaning and drying, and the single-chamber device includes: a carrying part for holding and rotating a substrate; and spraying to the substrate A fluid supply part for fluid; a baffle part arranged around the carrying part for blocking splashing fluid; and a closed fluid collection chamber, wherein the carrying part, the fluid supply part and the baffle part are all provided In the fluid collection cavity. Further preferably, the post-processing unit may further include an additional scrubbing device for performing, for example, horizontal scrubbing of the substrate. Preferably, the post-processing unit includes a horizontal scrubbing device and a single-chamber device that are separately provided.

According to the second aspect of the present disclosure, preferably, the grinding module may include a grinding unit, the grinding unit includes a worktable, and an adsorbing member for adsorbing the substrate is provided on the worktable, the The suction member carries the substrate to move between the various stations of the grinding unit.

According to the second aspect of the present disclosure, preferably, the worktable can rotate around its vertical central axis, and three adsorbents capable of rotating independently are evenly distributed on the worktable, and the three adsorbents respectively It rotates among the rough grinding station, the fine grinding station and the loading and unloading station of the grinding unit.

According to the second aspect of the present disclosure, preferably, the grinding module may include a cleaning unit that includes a first cleaning part for cleaning and polishing the adsorbent, and a substrate for cleaning and drying the finely ground substrate The second cleaning department.

According to the second aspect of the present disclosure, preferably, the grinding module may include a measuring unit including a non-contact optical measuring instrument for measuring the thickness distribution of the ground substrate.

According to the second aspect of the present disclosure, preferably, the measuring unit may further include a contact measuring instrument for online monitoring of the thickness of the substrate, which is provided in the grinding unit for roughing the substrate. A rough grinding part for grinding and/or a fine grinding part for fine grinding the substrate.

A third aspect of the present disclosure provides a method for operating a substrate thinning equipment, the substrate thinning equipment includes a front-end module for realizing the in and out of the substrate, a grinding module for grinding the substrate, and A polishing module between the equipment front end module and the grinding module for chemical mechanical polishing of the substrate, the polishing module includes a moving buffer part capable of bidirectional movement and parallel to the moving buffer part along the length of the device The chemical mechanical polishing unit is arranged, and the operation method includes the steps of: using the mobile buffer portion capable of bidirectional movement to transport the substrate from a first position close to the equipment front-end module to a second position close to the grinding module Grind the substrate at the grinding module; use the mobile buffer to transport the ground substrate from the second position to the first position; and in the chemical mechanical polishing unit The substrate is chemically mechanically polished with a carrier head capable of adjusting the loading pressure according to the thickness distribution of the substrate. The loading pressure of the carrier head on each zone of the substrate is based on The thickness distribution of the substrate before chemical mechanical polishing is adjusted, or according to the thickness distribution of the substrate measured online during the chemical mechanical polishing of the substrate.

According to the third aspect of the present disclosure, preferably, when the substrate is ground at the grinding module, the surface to be thinned of the substrate is placed upward to contact the grinding tool located above the substrate; When chemical mechanical polishing is performed on the substrate, the surface to be thinned of the substrate is placed downward to contact the polishing pad located under the substrate; the operation method further includes the following steps: after the substrate is finished grinding, and Before chemical mechanical polishing is performed on the substrate, the substrate is turned over.

According to the third aspect of the present disclosure, preferably, grinding the substrate at the grinding module may include the following steps: keeping the substrate at the loading and unloading station on the workbench of the grinding module On the adsorption member, the adsorption member carrying the substrate sequentially passes through the loading and unloading station and the grinding station of the grinding module, and then returns to the loading and unloading station, wherein the grinding station includes coarse At least one of the grinding station and the fine grinding station.

According to the third aspect of the present disclosure, preferably, the workbench may be a rotary workbench that can rotate about its vertical central axis, and it includes uniformly arranged loading and unloading stations and rough grinding stations of the grinding module. Three suction parts rotating between the work station and the fine grinding station, wherein: after the substrate is held on the suction part corresponding to the loading and unloading station on the work table, the work table is rotated forward 120 °, the substrate is moved to the rough grinding station for rough grinding; after the rough grinding is completed, the worktable is rotated forward by 120°, and the substrate is moved to the fine grinding station for fine grinding Grinding; and after finishing the fine grinding, the worktable is rotated in the reverse direction by 240°, and the substrate is moved back to the loading and unloading station. Rotary workbench substrate grinding has the advantages of high material removal rate, small substrate surface damage, and easy automation.

According to the third aspect of the present disclosure, preferably, grinding the substrate at the grinding module may include the following steps: the substrate after the grinding is first performed at the loading and unloading station of the grinding module. Clean. For example, in the case of rough grinding and fine grinding, the first cleaning is performed on the substrate after finishing the fine grinding at the loading and unloading station of the grinding module.

According to the third aspect of the present disclosure, preferably, transporting the substrate from the first position to the second position may include the following steps: transporting the substrate from the equipment front-end module to a location close to the polishing module The mobile buffer unit at the first position of the equipment front-end module, the mobile buffer unit carries the substrate to move to a second position close to the grinding module, and transports the substrate placed on the mobile buffer unit to the The grinding module; and, transporting the ground substrate from the second position to the first position includes the following steps: transporting the ground substrate from the grinding module to a location close to the grinding module The mobile buffer part in the second position and the mobile buffer part carry the substrate and move backward to the first position close to the equipment front-end module.

According to the third aspect of the present disclosure, preferably, the operation method may further include the following steps: after the chemical mechanical polishing of the substrate is completed, the substrate is sent from the chemical mechanical unit to the post-processing unit; the substrate Washing and drying are performed in the post-processing unit.

Through the substrate thinning method, substrate thinning equipment and operation method thereof described in the present disclosure, ultra-precision planarization processing of the substrate can be realized, which can provide technical guarantee for the ultra-high-density semiconductor stacking process, and is a high-density semiconductor packaging. An important component of development.

Description of the drawings

Through the detailed description made in conjunction with the following drawings, the advantages of the present disclosure will become clearer and easier to understand, but these drawings are only schematic and do not limit the protection scope of the present disclosure, in which:

Fig. 1 schematically shows a substrate thinning device according to an embodiment of the present disclosure;

2 to 3 respectively show a schematic plan view and a perspective view of a substrate thinning device according to a preferred embodiment of the present disclosure;

Fig. 4 schematically shows the operation flow of the substrate thinning device shown in Figs. 2 to 3;

5 to 6 respectively show a schematic plan view and a perspective view of a substrate thinning device according to another preferred embodiment of the present disclosure;

Fig. 7 schematically shows the operation flow of the substrate thinning device shown in Figs. 5 to 6;

8 to 9 respectively show a schematic perspective view and a top view of the grinding module of the substrate thinning device shown in Figs. 1 to 7;

Figures 10 to 11 show the grinding module shown in Figures 8 to 9 in a schematic perspective view and a top view, respectively, with the cleaning unit removed;

Figure 12 shows a schematic perspective view of the grinding module shown in Figures 8 to 9 with its cleaning unit and measuring unit removed;

Fig. 13 shows a schematic perspective view of the grinding wheel and worktable of the grinding module shown in Figs. 8 to 9;

Figure 14 shows a schematic perspective view of the cleaning unit of the grinding module;

Fig. 15 is a schematic perspective view from another angle showing the cleaning unit of the grinding module;

Figure 16 shows a schematic perspective view of a first transfer unit for a substrate thinning device, which includes a dry manipulator;

Figure 17 shows a schematic perspective view of a third transfer unit for a substrate thinning device, which includes a dry manipulator and a wet manipulator;

Fig. 18 shows a schematic perspective view of the chemical mechanical polishing unit of the substrate thinning apparatus shown in Figs. 1 to 7;

Figure 19 shows a schematic cross-sectional view of the carrying head of the chemical mechanical polishing unit shown in Figure 18;

Fig. 20 shows a schematic perspective view of a single-chamber device for a post-processing unit of a substrate thinning equipment;

Figure 21 shows a substrate thinning method according to a preferred embodiment of the present disclosure;

Figure 22 shows a substrate thinning method according to another preferred embodiment of the present disclosure;

FIG. 23 shows a substrate thinning method according to another preferred embodiment of the present disclosure;

Figure 24 shows rough grinding according to a preferred embodiment of the present disclosure;

Figure 25 shows a fine grinding according to a preferred embodiment of the present disclosure;

Figure 26 shows a chemical mechanical polishing according to a preferred embodiment of the present disclosure;

Figures 27 to 30 respectively show the substrate thinning methods of other various preferred embodiments of the present disclosure; and

Figures 31 to 34 illustrate the operation method of the substrate thinning apparatus according to various preferred embodiments of the present disclosure.

Description of reference signs:

1 Equipment front-end module

2 Polishing module

3 Grinding module

11 Substrate storage unit

111 Front-opening substrate transfer box

12 The first transmission unit

121 Picking and placing manipulator

122 The first transmission track

123 Base

21 The second transmission unit

22 Third transmission unit

23 Chemical mechanical polishing unit

24 Post-processing unit

211 Fixed Cache Department

212 Mobile Cache Department

221 Dry manipulator

222 Wet Robot

231 Film Deposit Department

232 Polishing disc

233 Polishing pad

234 Bearer Head

235 Finisher

236 Liquid Supply Department

31 Grinding unit

32 Fourth transmission unit

33 Measuring unit

34 Cleaning unit

311 Workbench

313 Rough Grinding Department

314 Rough grinding wheel

315 Fine Grinding Department

316 Fine grinding wheel

321 Simple manipulator

341 First Cleaning Department

342 Second Cleaning Department

331 Contact measuring instrument

332 Non-contact optical measuring instrument

2341 Superstructure

2342 Substructure

2343 Pedestal

2344 Elastic film

2345 Keep the ring

Z1 The first chamber

Z2 The second chamber

Z3 The third chamber

Z4 Fourth Chamber

Z5 Fifth Chamber

241 Single chamber device

242 Scrubbing device

2411 Carrying Department

2412 Baffle part

detailed description

The technical solutions described in the present disclosure will be described in detail below in conjunction with specific embodiments and accompanying drawings. The embodiments described here are specific specific implementations of the present disclosure, which are used to illustrate the concept of the present disclosure; these descriptions are all explanatory and exemplary, and should not be construed as limiting the implementation of the present disclosure and the scope of protection of the present disclosure . In addition to the implementation exceptions described here, those skilled in the art can also adopt other obvious technical solutions based on the content disclosed in the claims of this application and the description thereof. These technical solutions include adopting any changes to the embodiments described herein. Obvious technical solutions for replacement and modification. It should be understood that, unless otherwise specified, in order to facilitate understanding, the following descriptions of the specific embodiments of the present disclosure are based on the original static state of the relevant equipment, devices, components, etc., without external control signals and driving forces. describe.

In this disclosure, unless otherwise specified, the use of the terms "first", "second", etc. to describe various elements is not intended to limit the positional relationship, timing relationship, or importance relationship of these elements. Such terms are only used for Distinguish one element from another. In some examples, the first element and the second element may refer to the same instance of the element, and in some cases, based on the description of the context, they may also refer to different instances.

The terms used in the description of various examples in this disclosure are only for the purpose of describing specific examples, and are not intended to be limiting. Unless the context clearly indicates otherwise, if the number of elements is not specifically limited, there may be one or more elements. In addition, the term "and/or" used in the present disclosure covers any one of the listed items and all possible combinations.

The substrate thinning technology provided by the embodiments of the present disclosure is mainly applied to the backside thinning of the substrate. The backside mentioned here refers to the side of the substrate on which no devices are laid, which is generally a substrate. The substrate material can be silicon, silicon oxide, or nitrogen. Silicon carbide, silicon carbide, sapphire, etc.

Fig. 1 schematically shows a substrate thinning device according to an embodiment of the present disclosure. The substrate thinning equipment includes an equipment front-end module 1, a grinding module 3 for grinding the substrate, and a polishing module 2 for chemical mechanical polishing of the substrate after the grinding is completed. In the embodiment shown in FIG. 1, the polishing module 2 further includes a transfer unit for transferring the substrate. The equipment front-end module 1 is arranged on the front side of the substrate thinning equipment, and is a transition module that realizes the transfer of the substrate from the outside to the inside of the equipment platform, and is used to realize the substrate in and out to realize the "dry in and dry out" of the substrate. The grinding module 3 is arranged at the end of the substrate thinning equipment, and is used to realize the grinding of the substrate, for example, rough grinding and fine grinding, or rough grinding or fine grinding. The polishing module 2 is arranged between the equipment front-end module 1 and the grinding module 3, and is used to perform chemical mechanical polishing on the substrate after the completion of the grinding of the substrate using a load-bearing head that can adjust the pressure according to the thickness distribution of the substrate. The function of transferring substrates between these three modules. The equipment front-end module 1 includes a substrate storage unit 11 and a first transmission unit 12. The polishing module 2 includes a second transfer unit 21, a third transfer unit 22, a chemical mechanical polishing unit 23, and a post-processing unit 24 (this will be described in further detail below).

Figures 2 and 3 respectively show a schematic plan view and a perspective view of a substrate thinning device according to a preferred embodiment of the present disclosure. The grinding module 3 for grinding and the polishing module 2 for chemical-mechanical polishing of the substrate and substrate transfer after the rough grinding and fine grinding are completed. The equipment front-end module 1 is arranged on the front end side of the substrate thinning equipment, the grinding module 3 is arranged at the end of the substrate thinning equipment, and the polishing module 2 is arranged between the equipment front-end module 1 and the grinding module 3.

Equipment front-end module 1:

The equipment front-end module 1 includes a substrate storage unit 11 and a first transmission unit 12. The substrate storage unit 11 is arranged on the front side of the substrate thinning equipment, and the first transfer unit 12 is arranged between the substrate storage unit 11 and the polishing module 2 to realize the transfer of the substrate between the substrate storage unit 11 and the polishing module 2 .

The substrate storage unit 11 is composed of a plurality of front opening unified pods (FOUP) 111, and specifically may be two, three, or the like. The front-opening substrate transfer box 111 is a container used in the semiconductor manufacturing process to protect, transport, and store substrates. Its main components are a front-opening container that can hold substrates and a front-opening door structure. The front-opening door structure is air-tightly connected to the outer wall of the substrate thinning equipment, so that the front-opening container communicates with the inside of the equipment.

The first transfer unit 12 includes a pick-and-place manipulator 121 and a first transfer track 122. The base 123 of the pick-and-place manipulator 121 is set on the first transfer track 122, and the base 123 can slide on the first transfer track 122 to The movement between different positions is realized. In addition, the mechanical arm of the pick-and-place manipulator 121 can rotate on the base 123, and the mechanical arm can be extended or folded and contracted. The pick and place manipulator is a drying manipulator, used to pick and place dry and clean substrates. The pick-and-place manipulator can take out the substrate to be processed from the substrate storage unit 11 through the door structure of the substrate transfer box 111 and send it to the polishing module 2, and can also receive the processed substrate from the polishing module 2 and put it into the substrate transfer box 111.

Grinding module 3:

The grinding module 3 includes a grinding unit 31, a fourth transfer unit 32, a measuring unit 33 and a cleaning unit 34.

8 and 9 show the grinding unit 31 in a schematic perspective view and a plan view, respectively. The illustrated grinding unit 31 includes a table 311, a rough grinding part 313, a fine grinding part 315, and a grinding fluid supply part. Among them, the worktable 311 is provided with a suction cup 312 for adsorbing the substrate, the rough grinding part 313 is provided with a rough grinding wheel 314 for rough grinding the substrate, and the fine grinding part 315 is provided with a fine grinding sand for fine grinding the substrate. Round 316. The grinding process is to press and rotate the grinding wheel on the surface of the substrate to grind off a certain thickness.

The worktable 311 can rotate around its vertical central axis. There are three individually rotatable suction cups evenly distributed on the worktable, namely the first suction cup, the second suction cup and the third suction cup. The three suction cups are made of porous ceramics with the same structure. The suction cups realize vacuum adsorption of the substrate, and the connection line between the centers of the three suction cups and the center of the worktable 311 forms an angle of 120° with each other. The three suction cups correspond to the three stations 312, namely the rough grinding station, the fine grinding station and the loading and unloading station. The two stations opposite to the grinding wheel are used for rough grinding and fine grinding respectively, and the remaining one It is used for loading, unloading and cleaning of substrates. The rotation of the worktable can drive the three suction cups to switch between these three stations, so as to realize that the suction cup carries the substrate and cyclically moves in the order of loading and unloading station-rough grinding station-fine grinding station-loading and unloading station. In this embodiment, the fully automatic loading and unloading, continuous grinding and cleaning of the substrate are realized through repeated cycles. Rotary workbench substrate grinding has the advantages of high material removal rate, small substrate surface damage, and easy automation.

The rough grinding part 313 includes a rough grinding wheel 314 with a cup-shaped structure, a rough grinding spindle, a rough grinding spindle seat, and a rough grinding feed mechanism. The rough grinding wheel is connected to the bottom of the rough grinding spindle so that the rough grinding spindle drives the rough grinding wheel. Rotate to realize the rotary grinding of the surface of the substrate by the rough grinding wheel. The rough grinding spindle is connected to the rough grinding feed mechanism through the rough grinding spindle seat to move up and down. The rough grinding feed mechanism controls the rough grinding wheel to perform axial cutting relative to the substrate. Type feed grinding. In this embodiment, the rough grinding wheel may be a diamond grinding wheel, the surface of which is relatively rough to realize rapid substrate grinding and reduce substrate thinning time. During rough grinding, the feed speed of the rough grinding wheel relative to the substrate is 2 to 10 μm/s to achieve high-speed feed, and the speed of the rough grinding wheel is 2000-4000 rpm. The radius of the rough grinding wheel matches the radius of the substrate, and can be 1 to 1.2 times the radius of the substrate. The rough grinding process reduces the thickness of the substrate by more than 600 μm. After rough grinding, the thickness of the substrate can be reduced to within 150 μm.

The fine grinding part 315 includes a fine grinding wheel 316 with a cup-shaped structure, a fine grinding spindle, a fine grinding spindle seat, and a fine grinding feed mechanism. The fine grinding wheel is connected to the bottom of the fine grinding spindle so that the fine grinding spindle drives the fine grinding wheel Rotate to realize the grinding wheel of the fine grinding wheel to grind the surface of the substrate. The fine grinding spindle is connected to the fine grinding feed mechanism through the fine grinding spindle seat to move up and down, and the fine grinding wheel is controlled by the fine grinding feed mechanism to cut axially relative to the base plate. Type feed grinding. In this embodiment, the fine grinding wheel may be a diamond grinding wheel, and its surface roughness is lower than that of a coarse grinding wheel. The rapid removal of substrate surface material due to rough grinding will cause serious surface defects and losses. The fine surface of the fine grinding wheel is used for low-speed grinding. Shaving to reduce the thickness of the damage layer on the substrate surface and improve the surface quality of the substrate. In the fine grinding, the feed speed of the fine grinding wheel relative to the base plate is 0.1 to 1 μm/s to achieve low-speed feed to improve the grinding accuracy, and the speed of the fine grinding wheel is 2000-4000 rpm. The radius of the fine grinding wheel matches the radius of the substrate, and can be 1 to 1.2 times the radius of the substrate. The thickness reduction of the substrate during the fine grinding process is between 50 and 100 μm. After the fine grinding, the thickness of the substrate can be reduced to 10 to 50 μm.

The grinding fluid supply part is used for spraying grinding fluid on the surface of the substrate during rough grinding and/or fine grinding to assist the grinding, and the grinding fluid can be deionized water.

The fourth transfer unit 32 includes a simple manipulator 321. The simple manipulator 321 takes the substrate from the mobile buffer 212 and sends it to the grinding unit 31 for grinding. After the grinding and cleaning are completed, the simple manipulator 321 takes the substrate from the grinding unit 31 and then It is placed in the mobile buffer 212 to facilitate subsequent transfer of the substrate. The simple manipulator 321 is provided with a pipeline for vacuuming to realize vacuum adsorption of the substrate.

The measuring unit 33 includes a contact measuring instrument 331 and a non-contact optical measuring instrument 332, which can realize online monitoring of the thickness of the substrate. The probe of the contact measuring instrument is pressed on the surface of the substrate to measure the thickness of the substrate by using the height difference between the upper and lower surfaces of the substrate. There are two sets of contact measuring instruments, which are respectively arranged in the rough grinding part 313 and the fine grinding part 315. The non-contact optical measuring instrument irradiates the substrate with infrared light and calculates the thickness of the substrate according to the different reflected light on the upper and lower surfaces of the substrate.

14 to 15 schematically show the cleaning unit 34 from different angles, and the cleaning unit 34 includes a first cleaning part 341 and a second cleaning part 342. The first cleaning part 341 is used for suction cup cleaning and polishing, and has a rotatable first body. The bottom of the first body is provided with a brush for cleaning the suction cup and oilstone for polishing the suction cup. The pipeline inside the body sprays cleaning fluid to the suction cup. The second cleaning part 342 is used for substrate cleaning and has a rotatable second body. The bottom of the second body is provided with a brush for cleaning the substrate, and the bottom of the second body is also provided with a through hole to pass through the pipeline inside the second body to the substrate. Liquid for spray cleaning.

10 to 12 also show the grinding unit 31, respectively. For the sake of clarity, the cleaning unit is removed in FIGS. 10 to 11, and the cleaning unit and the measuring unit are removed in FIG.

FIG. 13 shows a grinding wheel and a suction cup used for the grinding unit 31. During grinding, the suction cup adsorbs the substrate on it and drives the substrate to rotate. The grinding wheel presses on the substrate, rotates and feeds along the axial direction F at a certain feed speed, thereby grinding the substrate.

Polishing module 2:

The polishing module 2 includes a second transfer unit 21, a third transfer unit 22, a chemical mechanical polishing unit 23 and a post-processing unit 24. The chemical mechanical polishing unit 23 and the second transfer unit 21 are arranged in parallel along the length of the device. The post-processing unit 24 is located between the first transfer unit 12 and the chemical mechanical polishing unit 23. The third transfer unit 22 is adjacent to the first transfer unit 12, the second transfer unit 21, the chemical mechanical polishing unit 23, and the post-processing unit 24, and is used for the first transfer unit 12, the second transfer unit 21, the chemical mechanical polishing The unit 23 and the post-processing unit 24 realize mutual transfer of substrates.

The second transmission unit 21 includes a fixed buffer part 211 and a mobile buffer part 212 for temporarily storing and shipping substrates. The fixed buffer portion 211 is provided at a position adjacent to the equipment front-end module 1 to temporarily store the substrates transferred from the equipment front-end module 1 or the substrates to be transferred to the equipment front-end module 1. The moving buffer part 212 is arranged along the direction from the equipment front-end module 1 to the grinding module 3 to form a substrate transmission path between the equipment front-end module 1 and the grinding module 3. The substrate is transferred between 2 and the grinding module 3. The mobile buffer portion 212 includes a fixing mechanism, a centering mechanism, and a horizontal moving mechanism. The centering mechanism is arranged on the fixing mechanism to position the substrate placed on the fixing mechanism to a position concentric with the fixing mechanism. The fixing mechanism is connected with the horizontal moving mechanism to make The fixed mechanism carries the substrate to move horizontally. The mobile buffer unit 212 can move in both directions in the horizontal direction. The mobile buffer unit 212 can move forward or backward between the first position and the second position. The first position is close to the fixed buffer unit 211 or close to the device front-end module 1. The two positions are close to the grinding module 3 to transfer the substrate to the grinding module 3 or to receive the substrate transferred from the grinding module 3 and transport it to other units. The substrate is taken out from the equipment front-end module 1 and transported to the grinding module 3 via the mobile buffer unit 212 for grinding; the substrate is grinded in the grinding module 3 and transported to the chemical mechanical polishing unit in the polishing module 2 via the mobile buffer unit 212 23 for polishing.

As shown in FIGS. 2 and 3 exemplarily, the mobile buffer unit 212 has only one substrate transfer path, and can only transport the substrate from the first position to the second position or the substrate from the second position to the first position. Of course, it is also conceivable that the mobile buffer portion 212 may include multiple substrate transfer paths, so that one substrate can be transported from the first position to the second position and another substrate can be transported from the second position to the first position at the same time. . For example, the mobile buffer unit 212 may include a plurality of mobile buffer members that can move bidirectionally, and the plurality of buffer members may be arranged side by side in a lateral direction, or arranged up and down in a vertical direction.

As exemplarily shown in FIGS. 2 and 3, the third transfer unit 22 includes a dry robot 221 and a wet robot 222. The dry robot 221 can transport the substrate from the fixed buffer part 211 of the second transfer unit 21 to the mobile buffer part 212, and the wet robot 222 can carry the ground substrate from the mobile buffer part 212 to the chemical mechanical polishing unit 23, or will pass through The chemical mechanical polishing substrate is transported from the chemical mechanical polishing unit 23 to the post-processing unit 24. As in the embodiment shown in FIG. 2 and FIG. 3, the mobile buffer unit 212 not only transports the dry substrate to be ground transported from the equipment front-end module 1, but also transports the wet substrate after the grinding, so in order to avoid drying the robot 221 may be contaminated by the wet mobile buffer part, so that the dry manipulator 221 is vertically spaced from the mobile buffer part 212 in the process of moving above the mobile buffer part 212, that is, there is a certain distance between the two in the vertical direction. Therefore, the dry robot 221 does not directly contact the mobile buffer unit 212 during the process of transporting the substrate to the mobile buffer unit 212. In this way, it is avoided that the dry manipulator 221 is contaminated by the moving buffer portion 212 to transport the wet substrate. The dry manipulator 221 and the wet manipulator 222 are fixed on the same base and can rotate around the base, and the base can move horizontally.

It is understandable that FIGS. 2 and 3 only briefly illustrate the composition of the third transmission unit 22. In practical applications, the dry manipulator 221 and the wet manipulator 222 are at different heights to prevent mutual interference during the movement. Both the dry manipulator 221 and the wet manipulator 222 can realize long-distance and short-distance movement operations, and the mechanical arms of both can be extended to extend the operating distance, and can also be folded to shrink the operating distance.

Chemical mechanical polishing (Chemical Mechanical Planarization, CMP) is a global surface planarization technology that can precisely and uniformly planarize the substrate to the required thickness and flatness. The chemical mechanical polishing unit 23 receives the substrate transferred from the third transmission unit 22 for chemical mechanical polishing, so as to improve the planarization effect of the substrate. As shown in FIGS. 2 and 3 and as shown in FIG. 18, the chemical mechanical polishing unit 23 includes a sheet storage portion 231, a polishing disk 232, a polishing pad 233 adhered to the polishing disk 232, adsorbing the substrate and driving the substrate to rotate The carrying head 234 of the, a dresser 235 for dressing the polishing pad 232, and a liquid supply part 236 for supplying polishing liquid to the surface of the polishing pad 233. Before polishing starts, the wet manipulator 222 of the third transfer unit 22 transports the substrate to the sheet storage portion 231, and the carrier head 234 moves to above the polishing pad 232 in the radial direction of the polishing disk 232 after loading the substrate from the sheet storage portion 231. During the chemical mechanical polishing process, the carrier head 234 presses the substrate on the polishing pad 233 covered on the surface of the polishing disk. The size of the polishing pad 233 is larger than the size of the substrate to be polished, for example, 1.2 times or more of the size of the substrate. Ensure that the substrate is polished evenly. The carrying head 234 rotates and moves back and forth along the radial direction of the polishing pad 232 so that the surface of the substrate in contact with the polishing pad 233 is gradually polished, while the polishing pad 232 rotates, and the liquid supply part 236 sprays polishing liquid on the surface of the polishing pad 233. Under the chemical action of the polishing liquid, the substrate and the polishing pad 233 are rubbed by the relative movement of the bearing head 234 and the polishing disk 232 to perform polishing. A polishing liquid composed of sub-micron or nano abrasive particles and a chemical solution flows between the substrate and the polishing pad 233, and the polishing liquid is evenly distributed under the transmission and rotating centrifugal force of the polishing pad 233, so as to be between the substrate and the polishing pad 233 A liquid film is formed. The chemical components in the liquid react with the substrate to convert insoluble substances into easily soluble substances, and then these chemical reactants are removed from the surface of the substrate by the micro-mechanical friction of abrasive particles and dissolved into the flowing liquid. Take away, that is, remove surface material in the alternate process of chemical film formation and mechanical film removal to achieve surface flattening treatment, so as to achieve the goal of global flattening. During polishing, the dresser 235 is used to dress and activate the topography of the surface 233 of the polishing pad. The dresser 235 can remove the impurity particles remaining on the surface of the polishing pad, such as the abrasive particles in the polishing liquid and the waste material falling off the surface of the substrate. It can also flatten the surface deformation of the polishing pad 233 caused by the grinding to ensure The uniformity of the surface morphology of the polishing pad 233 during polishing, thereby keeping the polishing removal rate stable. After the polishing is completed, the carrier head 234 sucks the substrate to place it on the sheet storage portion 231, and the third transfer unit 22 takes the substrate from the sheet storage portion 231 and then transports the substrate to the post-processing unit 24.

FIG. 19 is a schematic structural diagram of a bearing head 234. The carrying head 234 includes an upper structure 2341 and a lower structure 2342. The upper structure is connected with the driving shaft of the carrying head, and the upper structure and the lower structure are connected by a flexible connector. The lower structure 2342 includes a balance frame, a base 2343, an elastic membrane 2344, and a retaining ring 2345. Both the elastic membrane 2344 and the retaining ring 2345 are fixed on the lower surface of the base 2343, and the annular retaining ring 2345 is located outside the elastic membrane 2344 and surrounds the elastic membrane 2344. The elastic membrane 2344 is used to adsorb the substrate and apply downward pressure to the substrate. The elastic membrane may be made of an elastic material, for example, may be made of chloroprene or silicon rubber. The holding ring 2345 is used to hold the substrate under the elastic membrane 2344 to prevent the substrate from slipping out. As shown in Figure 19, the elastic membrane 2344 is provided with a plurality of concentric adjustable pressure chambers. Take the five adjustable pressure chambers in Figure 19 as an example for illustration, which are arranged concentrically from the center to the outside. The first chamber Z1, the second chamber Z2, the third chamber Z3, the fourth chamber Z4, and the fifth chamber Z5. The first chamber Z1 in the center is circular, and the second chamber Z2 to the fifth chamber Z5 are concentric rings. Obviously, the number of adjustable pressure chambers shown in FIG. 19 is only an example, and it can actually be other numbers, such as six, seven, etc. Particularly advantageously, the number of adjustable pressure chambers is seven.

The bottom of the carrying head used in this embodiment is provided with at least five adjustable pressure chambers, preferably seven adjustable pressure chambers, so that the pressure applied to the substrate surface can be adjusted by controlling the pressure in each adjustable pressure chamber. Partition pressure. The internal pressures of the first chamber Z1 to the fifth chamber Z5 are independent of each other and can be changed separately. Correspondingly, the different chambers of the carrier head divide the substrate surface into corresponding multiple partitions, so that the corresponding The polishing pressure of the five concentric annular areas can be adjusted independently. Each chamber can apply different pressures to its corresponding partition of the substrate surface. By separately controlling the pressure of the fluid such as pressurized air supplied to the chamber, different pressures can be applied to different partitions of the substrate surface. The CMP multi-zone pressure intelligent control technology realizes precise compensation and regulation of the surface shape of the substrate, which effectively improves the global thickness uniformity after the substrate is thinned.

The post-processing unit 24 (for example, as shown in FIG. 2-3) is used to clean and dry the polished substrate. The post-processing unit 24 is arranged between the chemical mechanical polishing unit 23 and the equipment front-end module 1 to facilitate polishing After the finished substrate is cleaned and dried, it is quickly transported to the equipment front-end module 1 for storage, and the post-processing unit 24 is adjacent to the first transfer unit 12, the third transfer unit 22, and the chemical mechanical polishing unit 23, respectively. The side facing the first transfer unit 12 is provided with a first opening and closing window to facilitate the first transfer unit to pick and place the substrate to the post-processing unit 24, and the side of the post-processing unit 24 facing the third transfer unit 22 is provided with a second opening The window is closed to facilitate the third transfer unit to take and place the substrate to the post-processing unit. As shown in Figs. 2-3, the post-processing unit 24 is a single-chamber device 241 that integrates cleaning and drying. As shown in FIG. 20, the single-chamber device 241 includes a carrier portion 2411 for holding and rotating a substrate, a fluid supply portion (not shown) for ejecting fluid to the substrate, a baffle portion 2412 for blocking splashing fluid, and a fluid Collection chamber (not shown). The carrying portion 2411, the fluid supply portion and the baffle portion 2412 are all arranged in a closed fluid collection cavity to prevent fluid leakage. The carrying portion 2411 keeps the substrate horizontal, and the carrying portion 2411 drives the substrate to rotate around its vertical central axis. The baffle portion 2412 is arranged around the supporting portion 2411, and the baffle portion 2412 may be formed by a ring-shaped baffle assembly. The fluid supply part is used to spray cleaning liquid or drying gas on the surface of the substrate. Under different actual needs, it can spray water, acidic solution and/or alkaline solution and drying on the substrate in sequence according to different operating sequences. Gas, etc., and use different baffles to guide different liquids into different chambers.

Figure 4 shows the operation flow of the substrate thinning equipment on the substrate thinning equipment shown in Figures 2 to 3 with arrows, including:

The pick-and-place manipulator 121 of the first transfer unit 12 picks up the substrate from the substrate transfer box 111 of the substrate storage unit 11;

The substrate is transferred to the fixed buffer portion 211 of the second transfer unit 21 by the pick-and-place manipulator 121;

The dry manipulator 221 of the third transfer unit 22 transfers the substrate placed in the fixed buffer part 211 to the mobile buffer part 212. At this time, the mobile buffer part 212 is close to the fixed buffer part 211;

The moving buffer portion 212 carries the substrate and moves to be close to the grinding module 3 (as shown by the dotted line in FIG. 4);

The simple manipulator of the fourth transfer unit 32 transfers the substrate placed in the mobile buffer portion 212 to the worktable 311 of the grinding unit 31, so that the substrate is fixed on the suction cup 312 corresponding to the current loading and unloading station;

The working table 311 is rotated forward by 120°, and the substrate is moved to the rough grinding station for rough grinding;

After the rough grinding is completed, the worktable 311 is rotated forward by 120°, and the substrate moves to the fine grinding station for fine grinding;

After finishing grinding, the worktable 311 reversely rotates 240°, and the substrate moves to the loading and unloading station;

After the ground substrate is cleaned and dried by the cleaning unit 34 at the loading and unloading station, it is removed by a simple manipulator and placed in the mobile buffer portion 212;

The moving buffer portion 212 is moved to the other end so that the wet robot 222 of the third transfer unit removes the substrate and places it on the sheet storage portion 231 of the chemical mechanical polishing unit 23;

The substrate is polished in the chemical mechanical polishing unit 23;

After the chemical mechanical polishing is completed, the wet manipulator 222 of the third transfer unit 22 removes the substrate from the sheet storage portion 231 and sends it to the post-processing unit 24;

The substrate is cleaned and dried in the post-processing unit 24;

After the substrate is cleaned and dried, the pick-and-place manipulator 121 of the first transfer unit 12 takes the clean substrate out of the post-processing unit 24 and sends it to the substrate transfer box 111 for storage.

It is understandable that during the grinding process, according to the different installation positions of the rough grinding part and the fine grinding part, the worktable can be moved in a rotation direction that is completely opposite to the above process. In other words, the table shown in Figure 4 can be used. The layout makes the forward rotation of the worktable a clockwise rotation while the reverse rotation is a counterclockwise rotation, or the rough grinding part and the fine grinding part can be exchanged so that the forward rotation of the worktable is counterclockwise while the reverse rotation is clockwise. The hour hand rotates. In addition, three substrates can be loaded on the three suction cups at the same time, and each suction cup performs different processing on the substrate according to the different working positions of the suction cups, thereby realizing the simultaneous working of the three working positions, improving substrate processing efficiency and improving equipment utilization.

After the substrate is subjected to rough grinding, fine grinding and chemical mechanical polishing in sequence, the total thickness variation (TTV) of the substrate is not more than 1 μm. Among them, the total thickness deviation refers to the maximum variation of the thickness at different radii of the substrate. This realizes the processing of an ultra-flat and ultra-smooth substrate surface.

5 to 6 respectively show a schematic plan view and a perspective view of a substrate thinning device according to another preferred embodiment of the present disclosure. In FIGS. 5 to 6, the same modules, units or devices as those of the substrate thinning equipment shown in FIGS. 2 to 3 are denoted by the same reference numerals. Similar to the embodiments shown in FIGS. 2 to 3, the substrate thinning equipment shown in FIGS. 5 to 6 also includes an equipment front end module 1, a polishing module 2 and a grinding module 3. The equipment front-end module 1 is installed at the front end of the substrate thinning equipment, the grinding module 3 is installed at the end of the substrate thinning equipment, and the polishing module 2 is installed between the equipment front-end module 1 and the grinding module 3 to complete the alignment. After the rough grinding and fine grinding of the substrate, the substrate is chemically and mechanically polished by a carrier head capable of adjusting the pressure according to the thickness distribution of the substrate. The polishing module 2 includes a second transfer unit 21, a third transfer unit 22, a chemical mechanical polishing unit 23, and a post-processing unit 24. The chemical mechanical polishing unit 23 and the second transfer unit 21 are arranged in parallel along the length of the device, and the post-processing unit 24 is located Between the first transfer unit 12 and the chemical mechanical polishing unit 23, the third transfer unit 22 is adjacent to the first transfer unit 12, the second transfer unit 21, the chemical mechanical polishing unit 23, and the post-processing unit 24, and is used to A transfer unit 12, a second transfer unit 21, a chemical mechanical polishing unit 23 and a post-processing unit 24 realize mutual transfer of substrates.

The difference between the embodiment shown in FIGS. 5 to 6 and the embodiment shown in FIGS. 2 to 3 is that the post-processing unit 24 includes a horizontal scrubbing device 242 and a single-chamber device 241. The horizontal scrubbing device 242 faces the third There is a third opening and closing window (as shown in Figure 6) on the side of the transport unit for taking and placing the substrate. After performing chemical mechanical polishing on the substrate, the wet robot 222 transports the substrate from the chemical mechanical polishing unit to the horizontal scrubbing device 242 to perform horizontal scrubbing on the substrate. After that, the wet robot 222 transports the substrate from the horizontal scrubbing device 242 to the single-chamber device 241 to clean and dry the substrate, thereby obtaining a clean substrate.

Fig. 7 shows the operation flow of the substrate thinning device on the substrate thinning device shown in Figs. 5 to 6 with arrows. Different from the operation flow shown in FIG. 4, after chemical mechanical polishing is performed on the substrate, the wet robot 222 transports the substrate from the chemical mechanical polishing unit to the horizontal scrubbing device 242 to perform horizontal scrubbing on the substrate. After that, the wet robot 222 transports the substrate from the horizontal scrubbing device 242 to the single-chamber device 241 to clean and dry the substrate.

Based on the above-mentioned substrate thinning equipment, another aspect of the present disclosure also provides a substrate thinning method. The substrate thinning method may include the following steps: grinding the substrate; after the grinding is completed, using the According to the thickness distribution of the substrate, the load-bearing head for adjusting the loading pressure is divided into zones, and the substrate is chemically and mechanically polished.

According to some embodiments, the substrate thinning method may include the following steps:

Fine-grind the substrate; and

After the fine grinding is completed, a carrying head capable of adjusting the loading pressure according to the thickness distribution of the substrate is used to perform chemical mechanical polishing on the substrate.

Rough grinding of the substrate;

Fine-grind the substrate; and

After the rough grinding and fine grinding are completed, a carrying head capable of adjusting the loading pressure according to the thickness distribution of the substrate is used to perform chemical mechanical polishing on the substrate.

As shown in FIG. 21, the substrate thinning method includes:

Step S1, rough grinding the substrate, for example, rough grinding the substrate with a rough grinding wheel;

Step S2, after finishing the rough grinding, perform fine grinding on the substrate, for example, use a fine grinding wheel to perform fine grinding on the substrate; wherein, when the first preset condition is reached, the rough grinding is completed, and the first The preset condition is that the thickness of the substrate is measured to be reduced to a first preset value. The first preset value is within 150μm. Generally, the thickness of the substrate before grinding is 775μm. It can be seen that the rough grinding process needs to achieve a reduction of several hundred microns. Thin, use rough grinding to quickly remove material, improve processing efficiency;

In step S3, after the fine grinding is completed, the substrate is chemically mechanically polished using a bearing head that can adjust the pressure according to the thickness distribution of the substrate. Wherein, when the second preset condition is reached, the finish grinding is completed, and the second preset condition is that the thickness of the substrate is measured to be reduced to a second preset value, and the second preset value is between 10 and 50 μm.

In this embodiment, after rough grinding is performed on the substrate, the substrate is subjected to fine grinding, and the finely ground substrate is subjected to chemical mechanical polishing. Among them, ultra-precision grinding realizes rapid material removal, with a large amount of material removal, low cost and high efficiency. Chemical mechanical polishing can improve the surface quality of the substrate and achieve an ultra-flat and ultra-smooth surface. Considering multiple factors such as processing efficiency, processing cost, surface quality, pollution degree, etc., the combination of ultra-precision grinding and chemical mechanical polishing technology is the most economical and effective technical route.

In this embodiment, the total thickness deviation of the substrate is improved through the chemical mechanical polishing process. After the chemical mechanical polishing, the total thickness deviation of the substrate is reduced to the range of 1 μm, the thickness of the substrate is reduced by 3 to 5 μm in the chemical mechanical polishing process, and the thickness of the substrate is reduced to 7 to 10 μm after polishing.

The substrate is placed on the surface to be thinned upward during the rough grinding and fine grinding processes to contact the grinding wheel located above the substrate. The rough grinding and fine grinding processes use the grinding wheel located above the substrate to rotate relative to the surface of the substrate to remove the surface. Material, so the surface of the substrate to be thinned should be placed upwards for grinding.

In the chemical mechanical polishing process, the substrate is placed on the surface to be thinned down to contact the polishing pad located under the substrate. The chemical mechanical polishing process uses a carrier head to press the substrate on the polishing pad and move to make contact with the polishing pad. The surface of the substrate is gradually polished away, so the surface of the substrate to be thinned should be placed downward for polishing.

In this embodiment, since the rough grinding, fine grinding, and chemical mechanical polishing of the substrate are performed on the same surface of the substrate, that is to say, the surface to be thinned is the silicon substrate surface, and the surface of the substrate to be thinned is upward during grinding. During the chemical mechanical polishing, the surface of the substrate to be thinned is downward, so after the grinding process is completed, the substrate needs to be inverted, and the third transfer unit can be used to realize the substrate inversion.

FIG. 22 shows a substrate thinning method according to another preferred embodiment of the present disclosure. Before performing chemical mechanical polishing on the substrate in step S3, the method further includes:

Step S31, measuring the thickness distribution of the substrate that has been finely ground, where, for example, a non-contact optical measuring instrument can be used to obtain the thickness of the substrate;

Step S32, adjusting the loading pressure of the carrying head on each zone of the substrate surface according to the thickness distribution.

Preferably, step S32 may include:

Calculating the average thickness corresponding to each partition on the surface of the substrate based on the thickness distribution;

Comparing the average thickness of each partition, and making the load-bearing head apply a corresponding load pressure in the corresponding partition according to the average thickness of the partition;

Wherein, the loading pressure is positively correlated with the average thickness of the corresponding zone.

FIG. 23 shows a substrate thinning method according to another preferred embodiment of the present disclosure. The substrate thinning method further includes:

Step S33: During the chemical mechanical polishing of the substrate, the thickness distribution of the substrate is measured online, and the loading pressure of the carrier head on each partition of the substrate is adjusted according to the thickness distribution of the substrate measured online.

Fig. 24 shows a rough grinding process according to a preferred embodiment. The rough grinding of the substrate includes:

Step S11, for example, move the substrate to a rough grinding station through the worktable of the grinding unit;

Step S12, driving a rough grinding tool, such as a rough grinding wheel, to rotate and quickly move to contact with the substrate;

Step S13, perform rough grinding according to preset parameters;

Step S14, online monitoring of the thickness of the substrate;

Step S15, judging whether the thickness of the substrate reaches a first preset range;

Step S16, if the thickness of the substrate reaches the first preset range, stop feeding and allow the rough grinding tool to perform the first optical grinding of the substrate for the first preset time; or if the thickness of the substrate does not reach the first preset range, then Go back to step S13 and continue to perform rough grinding according to the preset parameters; and

Step S17, after step S16, lift up the rough grinding wheel.

Through the above steps, the rough grinding of the substrate is completed.

FIG. 25 shows a fine grinding process according to a preferred embodiment, and fine grinding of a substrate includes:

Step S21, for example, move the substrate to a fine grinding station through the worktable of the grinding unit;

Step S22, driving a fine grinding tool, such as a fine grinding wheel, to rotate and quickly move to contact with the substrate;

Step S23, perform fine grinding according to the initial feed rate;

Step S24, measuring the thickness of the substrate online, for example, measuring the thickness of the substrate by a contact measuring instrument;

Step S25, judging whether the thickness of the substrate reaches an intermediate target value;

Step S26, if the thickness of the substrate reaches the intermediate target value, raise the fine grinding wheel; if the thickness of the substrate does not reach the intermediate target value, return to step S23, and perform fine grinding according to the initial feed speed;

Step S27, for example, using a non-contact optical measuring instrument to measure the thickness distribution of the substrate;

Step S28, judging whether the thickness distribution of the substrate meets the consistency requirement;

Step S29, if the thickness distribution of the substrate meets the consistency requirement, perform fine grinding according to the second feed speed;

If the consistency requirement is not met, proceed to step S29' to adjust the inclination angle of the grinding wheel according to the thickness distribution of the substrate;

Step S30, judging whether the thickness of the substrate reaches a second preset range;

In step S40, if the thickness of the substrate reaches the second preset range, the feeding is stopped, and the fine grinding tool is allowed to perform the second light grinding of the substrate for the second preset time;

If the thickness of the substrate does not reach the second preset range, return to step S29;

In step S50, the fine grinding tool is lifted.

Through the above steps, finish grinding is completed.

In some embodiments, during the fine grinding process, the thickness distribution of the substrate can be monitored online to adjust the inclination angle of the fine grinding wheel. In order to improve the uniformity of the thickness of the substrate after grinding, during the grinding process, the thickness distribution of the substrate is obtained through the on-site measurement unit.

In some embodiments, the grinding unit may be provided with an automatic adjustment mechanism to formulate a corresponding compensation strategy according to the measurement result of the thickness distribution of the substrate, and automatically adjust the positional relationship between the grinding wheel and the suction cup, so as to obtain a flatter substrate. By comparing the thickness distribution of the substrate before and after the adjustment, it can be seen that the thickness uniformity has been greatly improved.

In some embodiments, the grinding force can be monitored online during the grinding process to control the feed rate.

FIG. 26 exemplarily shows a chemical mechanical polishing process according to a preferred embodiment of the present disclosure, which includes:

Obtain the thickness distribution of the substrate before polishing;

Use the carrier head to press the substrate on the polishing pad;

Adjust the pressure of each zone of the load-bearing head according to the thickness distribution;

Carry out chemical mechanical polishing;

Judge whether the polishing suspension condition is reached. If the polishing suspension condition is reached, the chemical mechanical polishing is completed; if the polishing suspension condition is not reached, the process returns to step 34 to continue the chemical mechanical polishing.

In addition, FIGS. 27 to 30 show a substrate thinning method according to other various preferred embodiments of the present disclosure.

As shown in FIG. 27, the substrate thinning method may include the following steps: rough grinding the substrate; fine grinding the substrate; after finishing the fine grinding, for example, at the loading and unloading station, performing the first step on the substrate Cleaning; chemical mechanical polishing of the substrate; horizontal cleaning and drying of the substrate.

If the chemical mechanical polishing process is to press the substrate on the polishing pad with the carrying head for polishing, the surface of the substrate to be thinned should be placed downward, and the substrate needs to be turned over after the substrate is finished grinding. As shown in FIG. 28, the substrate thinning method may include the following steps: rough grinding the substrate; fine grinding the substrate; after finishing the fine grinding, for example, at the loading and unloading station, performing the first step on the substrate Cleaning; flipping the substrate; chemical mechanical polishing of the substrate; horizontal cleaning and drying of the substrate.

After the chemical mechanical polishing is completed, the substrate can be horizontally scrubbed and then cleaned and dried horizontally. As shown in FIG. 29, the substrate thinning method may include the following steps: rough grinding the substrate; fine grinding the substrate; after finishing the fine grinding, performing a first cleaning on the substrate; Polishing; horizontal brushing of the substrate; horizontal cleaning and drying of the substrate. Further, similarly, if the chemical mechanical polishing process uses the carrier head to press the substrate on the polishing pad for polishing, the substrate needs to be turned over after the substrate is finished grinding. As shown in FIG. 30, the substrate thinning method may include the following steps: rough grinding the substrate; fine grinding the substrate; after finishing the fine grinding, performing a first cleaning on the substrate; turning the substrate over; Perform chemical mechanical polishing; horizontally scrub the substrate; horizontally clean and dry the substrate.

Figures 31 to 34 illustrate the operation method of the substrate thinning apparatus according to various preferred embodiments of the present disclosure. The operation method of the substrate thinning device and its components are described in detail below in conjunction with the substrate thinning equipment shown in FIGS. 1 to 20, especially in conjunction with FIG. 4 and FIG. 7. In FIG. The schematic top view of the substrate thinning device of the preferred embodiment exemplarily marks the operation flow. In FIG. 7, arrows are used to exemplarily mark the schematic top view of the substrate thinning device according to another preferred embodiment. The flow of operations.

As shown in FIG. 31, the method of operating a substrate thinning device according to a preferred embodiment of the present disclosure includes:

The dry manipulator 221 of the third transfer unit 22 is used to transport the substrate placed in the fixed buffer portion 211 to the mobile buffer portion 212 located close to the equipment front-end module 1;

The moving buffer portion 212 carries the substrate and moves to a second position close to the grinding module 3 (as shown by the dashed line in FIG. 1);

Rotate the worktable 311 in the forward direction to move the substrate to the rough grinding station for rough grinding;

After the rough grinding is completed, the table 311 is rotated forward to move the substrate to the fine grinding station for fine grinding;

After finishing grinding, rotate the worktable 311 in reverse to move the substrate to the loading and unloading station;

Moving the mobile buffer portion 212 to the first position carrying the substrate;

After the ground substrate is cleaned by the cleaning unit 34 at the loading and unloading station, it is removed by a simple manipulator and placed in the mobile buffer 212, and then the suction cup on the worktable 313 is cleaned;

The moving buffer portion 212 is moved to the first position so that the wet manipulator 222 of the third transfer unit removes and turns the substrate, and then places it on the sheet storage portion 231 of the chemical mechanical polishing unit 23;

The substrate is polished in the chemical mechanical polishing unit 23;

The substrate is cleaned and dried in the post-processing unit 24;

It is understandable that during the grinding process, the worktable can be moved in a rotation direction completely opposite to the above process according to the difference in the installation positions of the rough grinding part and the fine grinding part. In addition, three substrates can be loaded on the three suction cups at the same time, and each suction cup performs different processing on the substrate according to the different working positions of the suction cups, thereby realizing the simultaneous working of the three working positions, improving substrate processing efficiency and improving equipment utilization.

FIG. 32 shows an operation method of a substrate thinning apparatus according to another preferred embodiment of the present disclosure. Compared with the embodiment shown in Figure 31, it further specifies:

Rotate the table 311 forward by 120° to move the substrate to the rough grinding station for rough grinding;

After the rough grinding is completed, rotate the table 311 forward by 120° to move the substrate to the fine grinding station for fine grinding; and

After finishing grinding, the worktable 311 is rotated in the reverse direction by 240° to move the substrate to the loading and unloading station.

FIG. 33 shows an operation method of a substrate thinning apparatus according to another preferred embodiment of the present disclosure. Compared with the embodiment shown in Figure 33, it further specifies:

After polishing is completed, use a wet robot to remove the substrate from the chemical mechanical polishing unit and send it to the horizontal scrubbing unit; and

After the substrate is scrubbed in the horizontal scrubbing unit, it is taken out by a wet manipulator and sent to the post-processing unit.

FIG. 34 shows an operation method of a substrate thinning apparatus according to another preferred embodiment of the present disclosure. Compared with the embodiment shown in Figure 31, it further specifies:

After the rough grinding is completed, rotate the table 311 forward by 120° to move the substrate to the fine grinding station for fine grinding;

After finishing grinding, rotate the worktable 311 by 240° in reverse to move the substrate to the loading and unloading station;

Although the embodiments or examples of the present disclosure have been described with reference to the accompanying drawings, it should be understood that the above-mentioned methods, systems, and devices are merely exemplary embodiments or examples, and the scope of the present disclosure is not limited by these embodiments or examples, but It is only limited by the authorized claims and their equivalent scope. Various elements in the embodiments or examples may be omitted or may be replaced by equivalent elements. In addition, the steps may be performed in an order different from that described in the present disclosure. Further, various elements in the embodiments or examples can be combined in various ways. What is important is that as technology evolves, many elements described herein can be replaced by equivalent elements that appear after this disclosure.

Claims

A method for thinning a substrate, which includes the following steps:

Grind the substrate, including:

Rough grinding the substrate (S1); and

Performing fine grinding on the substrate (S2), the fine grinding includes: making a fine grinding tool perform fine grinding at an initial feed speed; when the thickness of the substrate reaches an intermediate target value, suspending the fine grinding Grinding; measuring the fine grinding thickness distribution of the substrate, and adjusting the inclination angle of the fine grinding related parts according to the fine grinding thickness distribution; and making the fine grinding tool perform fine grinding at a second feed speed cut;

After the grinding is completed, a carrying head capable of adjusting the loading pressure according to the thickness distribution of the substrate is used to perform chemical mechanical polishing on the substrate (S3);

Wherein, after the completion of the grinding of the substrate and before the chemical mechanical polishing (S3) of the substrate, the thickness distribution of the finished substrate is measured, and the carrying head is adjusted according to the thickness distribution of the substrate The loading pressure on each zone of the substrate; or

Wherein, during the chemical mechanical polishing (S3) of the substrate, the thickness distribution of the substrate is measured on-line, and the loading pressure of the carrier head on each partition of the substrate is adjusted according to the thickness distribution of the substrate.
The method for thinning a substrate according to claim 1, wherein adjusting the loading pressure of the carrying head to each subarea of the substrate according to the thickness distribution of the substrate comprises:

Calculating the average thickness of each partition of the substrate based on the thickness distribution of the substrate;

According to the size of the average thickness of each partition, the load-bearing head applies a corresponding load pressure on each partition.
The substrate thinning method according to claim 1, wherein the thickness distribution of the substrate is measured by a non-contact optical measuring instrument.
The method for thinning a substrate according to claim 1, wherein:

When grinding the substrate, the surface to be thinned of the substrate is placed upward to contact the grinding tool located above the substrate,

When chemical mechanical polishing (S3) of the substrate is performed, the surface to be thinned of the substrate is placed downward to contact the polishing pad located under the substrate,

Wherein, after the completion of the grinding of the substrate and before the chemical mechanical polishing of the substrate, the substrate is turned over.
The substrate thinning method according to claim 4, wherein the surface to be thinned is the back surface of the substrate, and the back surface is the opposite side of the device surface on which the electronic circuit is formed.
The method for thinning a substrate according to claim 1, wherein the rough grinding comprises:

Measuring the thickness of the substrate online; and

The first light grinding is performed when the thickness of the substrate reaches a first preset range.
The substrate thinning method according to claim 6, wherein the first optical grinding comprises: stopping the feed of a rough grinding tool, and allowing the rough grinding tool to perform a first preset on the substrate The light grinding of time.
The method for thinning a substrate according to claim 1, wherein the fine grinding comprises:

The second light grinding is performed when the thickness of the substrate reaches a second preset range.
The method for thinning a substrate according to claim 8, wherein the second optical grinding comprises: stopping the feeding of the fine grinding tool, so that the fine grinding tool performs a second operation on the substrate. Light grinding at a preset time.
The substrate thinning method according to claim 1, wherein adjusting the inclination angle of the fine grinding-related parts comprises: adjusting the inclination angle of the finishing grinding tool, adjusting the inclination angle of the holder for holding the substrate, and At least one of the positional relationship between the shafts of the fine grinding tool and the holder is adjusted.
The substrate thinning method according to claim 1, wherein the chemical mechanical polishing is used to improve the total thickness deviation of the substrate.
11. The substrate thinning method according to claim 11, wherein after the chemical mechanical polishing, the total thickness deviation of the substrate is reduced to within 70% of that after the grinding.
The method for thinning a substrate according to claim 11, wherein after the substrate is sequentially subjected to the grinding and the chemical mechanical polishing treatment, the deviation of the total thickness of the substrate is not more than 1 μm.
The method for thinning a substrate according to claim 1, further comprising:

Using a mobile buffer part that can move in both directions, the substrate to be thinned is transported to the unit for grinding in one direction; and

Using the moving buffer portion, the ground substrate is transported back from the unit for grinding in the other direction opposite to the one direction.
The method for thinning a substrate according to claim 14, wherein the mobile buffer portion and the unit for chemical mechanical polishing are arranged in parallel along the length of the device.
The substrate thinning method according to claim 14, wherein the mobile buffer section can simultaneously transport the substrate to be thinned to the unit for grinding and transfer the ground substrate from The unit for grinding is transported back.
A substrate thinning equipment, which includes:

The equipment front-end module (1) is used to realize the in and out of the substrate, and the equipment front-end module (1) is arranged at the front end of the substrate thinning equipment;

The grinding module (3) is used to grind the substrate, the grinding module (3) is arranged at the end of the substrate thinning equipment, and the grinding includes rough grinding and fine grinding, so The fine grinding includes: making the fine grinding tool perform fine grinding at the initial feed speed; when the thickness of the substrate reaches an intermediate target value, suspending the fine grinding; measuring the fine grinding thickness distribution of the substrate, And adjusting the inclination angle of the fine grinding related parts according to the fine grinding thickness distribution; and making the fine grinding tool perform fine grinding at a second feed speed; and

The polishing module (2) is used to perform chemical mechanical polishing on the substrate using a carrying head (234) capable of adjusting the loading pressure according to the thickness distribution of the substrate after the completion of the grinding, and the polishing module (2) It is arranged between the equipment front-end module (1) and the grinding module (3), wherein the loading pressure of the bearing head (234) on each zone of the substrate is based on the chemical processing after the grinding is completed. Adjusting the thickness distribution of the substrate measured before mechanical polishing, or adjusting according to the thickness distribution of the substrate measured online during chemical mechanical polishing of the substrate;

The equipment front-end module (1) includes a first transmission unit (12) for taking out a substrate;

The polishing module (2) includes a second transfer unit (21), a third transfer unit (22), a chemical mechanical polishing unit (23), and a post-processing unit (24) for post-processing the chemical-mechanical polished substrate. ), wherein the second transmission unit has a mobile buffer portion (212) that can move bidirectionally between the equipment front-end module (1) and the grinding module (3);

Wherein, the third transmission unit (22) is related to the first transmission unit (12), the second transmission unit (21), the chemical mechanical polishing unit (23), and the post-processing unit (24) Are adjacent to each other and are used to transfer substrates between the first transfer unit (12), the second transfer unit (21), the chemical mechanical polishing unit (23), and the post-processing unit (24) .
The substrate thinning equipment according to claim 17, characterized in that the mobile buffer portion (212) can transport the substrate from a first position close to the equipment front-end module (1) to close to the grinding The second position of the module (3) and transport from the second position back to the first position; and

The chemical mechanical polishing unit (23) and the mobile buffer portion (212) are arranged in parallel along the length direction of the device.
The substrate thinning device according to claim 17, wherein the substrate thinning device comprises a non-contact optical measuring instrument for measuring the thickness distribution of the substrate.
The substrate thinning equipment according to claim 18, characterized in that the mobile buffer portion (212) can simultaneously transport a substrate from the first position to the second position and another substrate from the The second location is transported to the first location.
The substrate thinning equipment according to claim 20, wherein the mobile buffer unit (212) comprises at least two mobile buffer parts arranged in parallel, and one of the at least two mobile buffer parts A substrate is transported from the first position to the second position, and the other of the at least two mobile buffers transports the other substrate from the second position to close to the first position .
22. The substrate thinning equipment according to claim 21, wherein the at least two mobile buffer members are arranged in parallel on a horizontal plane of the same height, or arranged one above the other on a horizontal plane of different heights.
The substrate thinning equipment according to claim 17, wherein the mobile buffer portion (212) includes a fixing mechanism, a centering mechanism, and a horizontal moving mechanism, and the centering mechanism is provided on the fixing mechanism to The substrate placed on the fixing mechanism is positioned to a position concentric with the fixing mechanism, and the fixing mechanism is connected with the horizontal moving mechanism so that the fixing mechanism carries the substrate to move horizontally.
The substrate thinning equipment according to claim 17, characterized in that the third transfer unit (22) comprises a dry manipulator (221) for placing the substrate to the mobile buffer part and a dry manipulator (221) for moving from the The wet robot (222) for taking the substrate in the buffer part, the dry robot (221) and the wet robot (222) are arranged on the same robot base and can rotate around the robot base.
The substrate thinning equipment according to claim 24, wherein the dry manipulator (221) and the wet manipulator (222) are at different heights.
The substrate thinning equipment according to claim 24, wherein the dry robot (221) and the wet robot (222) are controlled to operate simultaneously.
The substrate thinning equipment according to claim 24, wherein the dry manipulator (221) is vertically aligned with the mobile buffer part (212) during the process of placing the substrate on the mobile buffer part (212). There are intervals in the straight direction.
The substrate thinning device according to any one of claims 17 to 20, wherein the carrying head (234) comprises a plurality of annular and concentric adjustable pressure chambers, and the plurality of adjustable pressure chambers The chamber divides the surface of the substrate into a plurality of corresponding partitions, and the pressure applied to the plurality of partitions can be adjusted by respectively controlling the pressure in the plurality of adjustable pressure chambers.
The substrate thinning equipment according to claim 28, wherein the plurality of adjustable pressure chambers is at least seven.
The substrate thinning equipment according to claim 28, wherein the carrying head (234) further comprises:

The upper structure (2341), the upper structure is connected with the drive shaft of the carrying head;

A lower structure (2342) connected to the upper structure through a flexible connector, the lower structure comprising:

Balance frame

Base (2343);

An elastic membrane (2344) for adsorbing the substrate and applying downward pressure to the substrate, the elastic membrane (2344) is fixed on the lower surface of the base (2343), the plurality of adjustable pressure chambers The chamber is arranged inside the elastic membrane (2344); and

A retaining ring (2345) for holding the substrate under the elastic membrane (2344) to prevent the substrate from slipping out, the retaining ring (2345) is fixed on the lower surface of the base (2343) and The elastic membrane (2344) is arranged on the outer side of the elastic membrane (2344) around the elastic membrane (2344), and the retaining ring protrudes from the elastic membrane (2344) in the axial direction.
The substrate thinning equipment according to any one of claims 17 to 20, wherein the first transmission unit (12) comprises a pick-and-place sheet manipulator (121) and a first transmission track, and the pick-and-place sheet The manipulator (121) has a base and an extendable or retractable manipulator arm that can rotate on the base, and the base is slidably arranged on the first transmission track.
The substrate thinning equipment according to any one of claims 17 to 20, wherein the equipment front-end module (1) comprises a substrate storage unit (11), and the substrate storage unit (11) is arranged in the The front-end side of the substrate thinning equipment includes a plurality of front-opening substrate transfer boxes (111), and the front-opening substrate transfer boxes (111) respectively include a front-opening container capable of accommodating substrates and a front-opening door structure, The front-opening door structure is airtightly connected to the outer wall of the substrate thinning device.
The substrate thinning equipment according to claim 17, wherein the post-processing unit (24) is arranged between the chemical mechanical polishing unit (23) and the equipment front-end module (1) and is respectively connected to the The first transfer unit (12), the third transfer unit (22) and the chemical mechanical polishing unit (23) are adjacent, and the post-processing unit (24) faces the first transfer unit (12). ) Is provided with a first opening and closing window to facilitate the first transfer unit (12) to take and place the substrate to the post-processing unit (24), and the post-processing unit (24) faces the third transfer The side of the unit (22) is provided with a second opening and closing window to facilitate the third transfer unit (22) to take and place the substrate to the post-processing unit (24).
The substrate thinning equipment according to claim 33, wherein the post-processing unit (24) is a single-chamber device (241) that integrates cleaning and drying, and the single-chamber device comprises:

Carrying part for holding and rotating the substrate;

A fluid supply part that ejects fluid to the substrate;

A baffle part arranged around the carrying part for blocking splashing fluid; and

A closed fluid collection cavity, wherein the carrying part, the fluid supply part and the baffle part are all arranged in the fluid collection cavity.
The substrate thinning equipment according to claim 33, wherein the post-processing unit (24) comprises a horizontal scrubbing device and a single-chamber device that are separately provided.
The substrate thinning equipment according to any one of claims 17 to 20, wherein the grinding module (3) comprises a grinding unit (31), and the grinding unit (31) comprises a worktable ( 311), the worktable (311) is provided with an adsorption member (312) for adsorbing the substrate, and the adsorption member (312) carries the substrate in each of the grinding units (31). Movement between bits.
The substrate thinning equipment according to claim 36, characterized in that the worktable (311) can rotate around its vertical central axis, and three independent rotating platforms are evenly distributed on the worktable (311). There are two adsorption parts, and the three adsorption parts respectively rotate between the loading and unloading station, the rough grinding station and the fine grinding station of the grinding unit (31).
The substrate thinning equipment according to claim 37, wherein the grinding module (3) comprises a cleaning unit (34), and the cleaning unit comprises a first cleaning part (341) for cleaning and polishing the adsorbent. ) And a second cleaning part (342) for cleaning the finished substrate.
The substrate thinning equipment according to any one of claims 17 to 20, characterized in that the grinding module (3) comprises a measuring unit (33), and the measuring unit comprises a measuring unit for measuring the thickness distribution of the substrate Non-contact optical measuring instrument (332).
The substrate thinning equipment according to claim 39, wherein the measuring unit further comprises a contact measuring instrument (331) for online monitoring of the thickness of the substrate, which is arranged in the grinding module (3). ) A rough grinding part (313) for rough grinding the substrate and/or a fine grinding part (315) for fine grinding the substrate.
A method for operating a substrate thinning device, the substrate thinning device is constructed according to any one of claims 17 to 40, and the substrate thinning device includes a device front-end module (1) for realizing the in and out of substrates, and A grinding module (3) for grinding the substrate and a polishing module ( 2) The polishing module (2) includes a mobile buffer part capable of bidirectional movement and a chemical mechanical polishing unit arranged in parallel with the mobile buffer part along the length of the device,

It is characterized in that the operation method includes the following steps:

Using the mobile buffer portion capable of bidirectional movement to transport the substrate from a first position close to the equipment front-end module (1) to a second position close to the grinding module (3);

Grinding the substrate at the grinding module (3);

Transport the ground substrate from the second position to the first position by using the moving buffer part; and

At the chemical mechanical polishing unit (23), a carrier head (234) capable of adjusting the loading pressure according to the thickness distribution of the substrate is used to perform chemical mechanical polishing on the substrate, wherein the carrier head (234) performs chemical mechanical polishing on the substrate The loading pressure of each zone of the substrate is adjusted according to the thickness distribution of the substrate after the grinding is completed and before the chemical mechanical polishing is performed, or according to the online measurement during the chemical mechanical polishing (S3) of the substrate The thickness distribution of the substrate is adjusted.
The operation method according to claim 41, wherein when the substrate is ground at the grinding module, the surface to be thinned of the substrate is placed upward to contact the ground surface located above the substrate. Tool; when the substrate is chemically mechanically polished (S3), the surface to be thinned of the substrate is placed downward to contact the polishing pad located under the substrate;

The operating method further includes the following steps: after the substrate is finished grinding and before the substrate is chemically mechanically polished, the substrate is turned over.
The operation method according to claim 41, wherein the grinding of the substrate at the grinding module comprises the following steps:

Keep the substrate on the suction member on the worktable of the grinding module, the suction member carrying the substrate through the loading and unloading station, the grinding station, and then back to the loading and unloading station, The grinding station includes a rough grinding station and/or a fine grinding station.
The operation method according to claim 43, wherein the workbench is a rotary workbench that can rotate about its vertical central axis, and it includes uniformly arranged positions that can be used in loading and unloading stations, rough grinding stations, and Three adsorption parts rotating between the fine grinding stations, of which:

After the substrate is held on the suction member at the loading and unloading station on the worktable, the worktable is rotated forward by 120° to move the substrate to the rough grinding station for rough grinding;

After the rough grinding is completed, the worktable is rotated forward by 120°, and the substrate is moved to the fine grinding station for fine grinding; and,

After finishing the fine grinding, the worktable is rotated in the reverse direction by 240°, and the substrate is moved back to the loading and unloading station.
The operation method according to claim 43, wherein the grinding of the substrate at the grinding module further comprises the following steps:

The substrate after the grinding is first cleaned at the loading and unloading station of the grinding module.
The operating method according to claim 41, wherein:

Transporting the substrate from the first position to the second position includes the following steps:

The substrate is transferred from the equipment front-end module (1) to the moving buffer part (212) of the polishing module (2), wherein the moving buffer part (212) is located close to the equipment front-end module (1) The first position;

The moving buffer portion (212) carries the substrate and moves to a second position close to the grinding module (3);

Transporting the substrate placed on the mobile buffer portion (212) to the grinding module (3);

as well as,

Transporting the substrate from the second position to the first position includes the following steps:

Transporting the finished substrate from the grinding module (3) to the mobile buffer portion (212) located at a second position close to the grinding module (3);

The mobile buffer unit (212) carries the substrate and moves in the reverse direction to a first position close to the equipment front-end module (1).
The operating method according to claim 41, wherein the operating method further comprises the following steps:

After the chemical mechanical polishing of the substrate is completed, sending the substrate from the chemical mechanical unit to a post-processing unit;

The substrate is cleaned and dried in the post-processing unit.