CN109848814A - A kind of full-automatic wafer attenuated polishing device - Google Patents
A kind of full-automatic wafer attenuated polishing device Download PDFInfo
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- CN109848814A CN109848814A CN201910142591.9A CN201910142591A CN109848814A CN 109848814 A CN109848814 A CN 109848814A CN 201910142591 A CN201910142591 A CN 201910142591A CN 109848814 A CN109848814 A CN 109848814A
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Abstract
The present invention provides a kind of full-automatic wafer attenuated polishing device, comprising: base, the base are equipped with corase grinding station, fine grinding station, polishing station and load station；Plummer, the plummer are movably located on base, and can be moved to corase grinding station, fine grinding station, polishing station and load station；First thinned component, the first thinned component are movably located on base to roughly grind when plummer is located at corase grinding station to the wafer on plummer；Second thinned component, the second thinned component are movably located on base to refine when plummer is located at fine grinding station to the wafer after the corase grinding on plummer；Polishing assembly, the polishing assembly are movably located on base to polish when plummer is located at the polishing station to the wafer after the corase grinding on plummer.Full-automatic wafer attenuated polishing apparatus structure according to an embodiment of the present invention is compact, runs smoothly, and reduces fragment rate when wafer processing, improves production efficiency.
Description
Technical field
The present invention relates to semiconductor processing technology field more particularly to a kind of full-automatic wafer attenuated polishing devices.
Background technique
In semiconductor processing industry, the preparation process of wafer, the thinned and polishing of wafer is must in wafer fabrication processes
Wafer is thinned to certain thickness by way of being thinned by indispensable process, and polishing process can remove the crystalline substance after being thinned
Circular surfaces damaging layer improves workpiece rate in blocks.After attenuated polishing, after wafer carries out pad pasting striping, next step work can be directly carried out
Sequence.Current attenuated polishing machine wafer fragment risk is high, and control difficulty is big.
Summary of the invention
In view of this, the present invention provides a kind of full-automatic wafer attenuated polishing device.
In order to solve the above technical problems, the present invention provides a kind of full-automatic wafer attenuated polishing device, comprising:
Base, the base are equipped with corase grinding station, fine grinding station, polishing station and load station；
Plummer, the plummer are movably located on the base, and can be moved to the corase grinding station, described
Station, the polishing station and the load station are refined, for carrying wafer；
First thinned component, the first thinned component are movably located on the base to be located in the plummer
The wafer on the plummer is roughly ground when the corase grinding station；
Second thinned component, the second thinned component are movably located on the base to be located in the plummer
The wafer after the corase grinding on the plummer is refined when the fine grinding station；
Polishing assembly, the polishing assembly are movably located on the base to be located at the polishing in the plummer
The wafer after the fine grinding on the plummer is processed by shot blasting when station.
Preferably, full-automatic wafer attenuated polishing device further include:
Material platform, the material platform are arranged adjacent to the base, and the material platform is equipped with blowing station, the taper
Position is for placing wafer.
Preferably, be additionally provided with pad pasting striping station at the neighbouring material platform, it is polished after wafer gone in the pad pasting
Remove thinned film when film station and sticks cutting-up film.
Preferably, full-automatic wafer attenuated polishing device further include:
Manipulator, the manipulator are used for transmission the wafer before processing or after processing, wafer before the processing be without
The wafer of corase grinding, fine grinding and polishing treatment is crossed, the wafer after the processing is the wafer by corase grinding, fine grinding and polishing treatment.
Preferably, the manipulator includes:
First manipulator, first manipulator are used for the wafer transfer before the processing to the institute of the load station
It states on plummer, or the wafer after processing is directly placed into magazine；
Second manipulator, second manipulator are used for the wafer transfer after the processing on the load station to institute
It states on pad pasting striping station.
Preferably, the described first thinned component includes:
First main shaft, first main shaft be located at it is on the base and rotatable around its axis, and along first main shaft
Axial direction it is scalable；
Corase grinding wheel, the corase grinding wheel are connected thick to be carried out by first main shaft drives to wafer with first main shaft
Mill.
Preferably, the described second thinned component includes:
Second main shaft, second main shaft be located at it is on the base and rotatable around its axis, and along second main shaft
Axial direction it is scalable；
Finishing grinding wheel, the finishing grinding wheel be connected with second main shaft with by second main shaft drives to the wafer after corase grinding
It is refined.
Preferably, the polishing assembly includes:
Buff spindle, the buff spindle be mounted on it is on the base and rotatable around its axis, and along the axis of the buff spindle
Line is scalable；
Rubbing head, the rubbing head are connected to be driven by the buff spindle on the polishing station with the buff spindle
Wafer after fine grinding is processed by shot blasting.
Preferably, the load station, the corase grinding station, the fine grinding are successively arranged according to the wafer processing sequence
Station and the polishing station.
Preferably, full-automatic wafer attenuated polishing device further include:
Turntable, the turntable are arranged on the base, and the plummer is mounted on the turntable.
The advantageous effects of the above technical solutions of the present invention are as follows:
Full-automatic wafer attenuated polishing device according to an embodiment of the present invention, compact-sized, reliable performance, operation are flat
Surely, and facilitate wafer takes piece and film releasing, can effectively reduce the fragment rate of wafer in process.
Detailed description of the invention
Fig. 1 is a structural schematic diagram of the full-automatic wafer attenuated polishing device of the embodiment of the present invention；
Fig. 2 is the part structure schematic diagram of the full-automatic wafer attenuated polishing device of the embodiment of the present invention.
Appended drawing reference:
Base 10；
Plummer 20；
First thinned component 30；First main shaft 31；Corase grinding wheel 32；
Second thinned component 40；Second main shaft 41；Finishing grinding wheel 42；
Polishing assembly 50；Rubbing head 51；
Blowing station 61；Pad pasting striping station 62；
Turntable 70；
First manipulator 80；
Second manipulator 90.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
Attached drawing, the technical solution of the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of the embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, ordinary skill
Personnel's every other embodiment obtained, shall fall within the protection scope of the present invention.
As shown in Figure 1 to Figure 2, full-automatic wafer attenuated polishing device according to an embodiment of the present invention, including base 10, hold
Microscope carrier 20, the first thinned component 30, the second thinned component 40 and polishing assembly 50.
Specifically, base 10 is equipped with corase grinding station, fine grinding station, polishing station and load station, plummer 20 and can live
It is located on base 10 dynamicly, and corase grinding station, fine grinding station, polishing station and load station can be moved to, for carrying crystalline substance
Circle, the first thinned component 30 be movably located on base 10 with plummer 20 be located at corase grinding station when on plummer 20
Wafer is roughly ground, the second thinned component 40 be movably located on base 10 with when plummer 20 is located at fine grinding station to holding
The wafer after corase grinding on microscope carrier 20 is refined, and polishing assembly 50 is movably located on base 10 to be located in plummer 20
The wafer after the fine grinding on plummer 20 is processed by shot blasting when polishing station.
That is, being equipped with plummer 20 and four fixed stations on base 10, station, fine grinding work are respectively roughly ground
Position, polishing station and load station, wherein plummer 20 can be moved at four stations, be equipped with and be mounted in corase grinding station
The first thinned component 30 on base 10, fine grinding station are equipped with the second thinned component 40 being mounted on base 10, polish station
Wafer can be placed on to the carrying of load station first when wafer is processed equipped with the polishing assembly 50 being mounted on base 10
On platform 20, plummer 20 drives wafer to be moved to corase grinding station, and the first thinned component 30 roughly grinds wafer, and corase grinding terminates
Afterwards, plummer 20 drives the wafer after corase grinding to be moved to fine grinding station, is refined, is passed through to wafer by the second thinned component 40
Wafer quickly can be thinned to required thickness by corase grinding and fine grinding to wafer, and process more steady, reliable, essence
After mill, plummer 20 drives the wafer after fine grinding to be moved to polishing station, and polishing assembly 50 is processed by shot blasting wafer,
To remove the crystal column surface damaging layer after being thinned, then the wafer after polishing returns to load station, completes being thinned and throwing for wafer
Light processing.
Full-automatic wafer attenuated polishing device according to an embodiment of the present invention, the device can be automatically performed wafer be thinned and
Two processes are polished, structure is simple, and it is reliable for operation, fragment rate of wafer during attenuated polishing can be reduced, production is improved
Efficiency.
According to one embodiment of present invention, full-automatic wafer attenuated polishing device further includes material platform, and material platform is neighbouring
Base 10 is arranged, and material platform is equipped with blowing station 61, and blowing station 61 is for placing wafer.
That is, blowing station 61, blowing station 61 is arranged in material platform and the adjacent setting of base 10 on material platform
On can place the magazine for containing wafer, convenient for the pick-and-place of wafer when feeding or blowing.
Preferably, be additionally provided with pad pasting striping station 62 at neighbouring material platform, it is polished after wafer in pad pasting striping station
Remove thinned film when 62 and sticks cutting-up film.
That is, the wafer after polishing treatment is moved when wafer needs to remove and film is thinned and needs to stick cutting-up film
It moves to pad pasting striping station 62, the thinned film on wafer is torn, stick cutting-up film and be fixed on taut frame, be put into taper
In the magazine of position 61, the automation processing of wafer is completed, is posted before wafer corase grinding wherein film is thinned, preferably to protect crystalline substance
Circle, avoids wafer fragmentation, by being thinned, polishing and the device of pad pasting striping integrates, further decreases wafer fragment
Rate improves production efficiency.
According to another embodiment of the invention, full-automatic wafer attenuated polishing device further includes manipulator, and manipulator is used
Wafer before transmission processing or after processing, the wafer before processing are without corase grinding, fine grinding and the wafer of polishing treatment, processing
Wafer afterwards is the wafer by corase grinding, fine grinding and polishing treatment.
That is, being completed during taking wafer and placing wafer using manipulator, manipulator is separately positioned on
Between load station and pad pasting striping station 62 and between blowing station 61 and load station, before manipulator transport processing
It is more advantageous to the reliability service of whole device with the wafer after processing, improves the automation of device.
Further, manipulator includes the first manipulator 80 and the second manipulator 90, and the first manipulator 80 will be for that will process
In preceding wafer transfer to the plummer 20 of load station, the second manipulator 90 is used to pass the wafer after processing on load station
It transports on pad pasting striping station 62.
That is, the wafer before processing is transported from magazine to load station, or not by the first manipulator 80
When needing pad pasting striping, the wafer after processing can be directly put into magazine by the first manipulator 80.It will by the second manipulator 90
Wafer after polishing is transported from load station to pad pasting striping station 62, using the means of transportation of two manipulators, is connected in wafer
In continuous production process, two manipulators are non-interference, can save the time, the effective production efficiency for improving wafer.
In a preferred embodiment of the invention, the first thinned component 30 includes the first main shaft 31 and roughly grinds wheel 32, the
One main shaft 31 is located on base 10 and rotatable around its axis and scalable along the axial direction of the first main shaft 31, corase grinding wheel 32 and the
One main shaft 31 is connected to be roughly ground by the driving of the first main shaft 31 to wafer.Second thinned component 40 includes the second main shaft 41 and essence
Emery wheel 42, the second main shaft 41 are located on base 10 and rotatable around its axis and scalable along the axial direction of the second main shaft 41, fine grinding
Wheel 42 is connected to be refined by the driving of the second main shaft 41 to the wafer after corase grinding with the second main shaft 41.
In other words, 32 rotation of corase grinding wheel is driven by the rotation of the first main shaft 31, and the first main shaft 31 drives corase grinding wheel
32 feedings drive finishing grinding wheel 42 to rotate to roughly grind to wafer, by the rotation of the second main shaft 41, and the second main shaft 41 drives
Finishing grinding wheel 42 is fed to refine to wafer, and the structure of the component is simple, and easy to process.
Preferably, polishing assembly 50 includes buff spindle and rubbing head 51, and buff spindle is mounted on base 10 and around its axis
Rotatable and scalable along the axis of buff spindle, rubbing head 51 is connected to be driven by buff spindle on polishing station with buff spindle
Fine grinding after wafer be processed by shot blasting.
That is, driving rubbing head 51 to rotate by buff spindle and feeding down to be processed by shot blasting to wafer.It is excellent
Selection of land, rubbing head 51 can swing, and can be processed by shot blasting to wafer peripheral, and the structure is simple, and be easily achieved pair
The polishing of wafer.
In some embodiments of the invention, load station, corase grinding station, fine grinding are successively arranged according to wafer processing sequence
Station and polishing station.
That is, load station, corase grinding station, fine grinding station and polishing can be successively arranged in wafer process sequence
Station, which, which can be, successively arranges to form straight line, is also possible to be arranged in square structure, it is preferred that present invention row
Column squarely structure is more advantageous to the continuous of processing, compact-sized and high in machining efficiency.
Further, full-automatic wafer attenuated polishing device further includes turntable 70, and turntable 70 is arranged on base 10, carrying
Platform 20 is mounted on turntable 70.That is, plummer 20 is mounted on turntable 70, four stations can be arranged in turntable 70
Periphery drives the rotation of plummer 20 so that the wafer on plummer 20 is moved to each station, and turntable when turntable 70 rotates
Plummer 20 there are four can be set on 70, to meet Continuous maching demand, four microscope carriers are worked at the same time, can be greatly improved
Production efficiency.
In short, full-automatic wafer attenuated polishing device according to an embodiment of the present invention, realize being thinned of wafer, polishing and
The full-automatic processing of pad pasting striping, compact-sized, reliable performance runs smoothly, and facilitate wafer takes piece and film releasing, can
To effectively reduce the fragment rate of wafer in process.
Unless otherwise defined, technical term or scientific term used in the present invention are should be in fields of the present invention
The ordinary meaning that personage with general technical ability is understood." first ", " second " used in the present invention and similar word
It is not offered as any sequence, quantity or importance, and is used only to distinguish different component parts." connection " or " connected "
It is not limited to physics or mechanical connection etc. similar word, but may include electrical connection, either directly
Or it is indirect."upper", "lower", "left", "right" etc. are only used for indicating relative positional relationship, when the absolute position for being described object
After setting change, then the relative positional relationship also correspondingly changes.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of full-automatic wafer attenuated polishing device characterized by comprising
Base, the base are equipped with corase grinding station, fine grinding station, polishing station and load station；
Plummer, the plummer are movably located on the base, and can be moved to the corase grinding station, the fine grinding
Station, the polishing station and the load station, for carrying wafer；
First thinned component, the first thinned component are movably located on the base described to be located in the plummer
The wafer on the plummer is roughly ground when roughly grinding station；
Second thinned component, the second thinned component are movably located on the base described to be located in the plummer
The wafer after the corase grinding on the plummer is refined when refining station；
Polishing assembly, the polishing assembly are movably located on the base to be located at the polishing station in the plummer
When the wafer after the fine grinding on the plummer is processed by shot blasting.
2. full-automatic wafer attenuated polishing device according to claim 1, which is characterized in that further include:
Material platform, the material platform are arranged adjacent to the base, and the material platform is equipped with blowing station, and the blowing station is used
In placement wafer.
3. full-automatic wafer attenuated polishing device according to claim 2, which is characterized in that at the neighbouring material platform also
Equipped with pad pasting striping station, it is polished after wafer remove thinned film in the pad pasting striping station and stick cutting-up film.
4. full-automatic wafer attenuated polishing device according to claim 3, which is characterized in that further include:
Manipulator, the manipulator are used for transmission the wafer before processing or after processing, and the wafer before the processing is without thick
It grinds, the wafer of fine grinding and polishing treatment, the wafer after the processing is the wafer by corase grinding, fine grinding and polishing treatment.
5. full-automatic wafer attenuated polishing device according to claim 4, which is characterized in that the manipulator includes:
First manipulator, first manipulator described in the wafer transfer before the processing to the load station for will hold
On microscope carrier, or the wafer after processing is directly placed into magazine；
Second manipulator, second manipulator are used for the wafer transfer after the processing on the load station to the patch
On film striping station.
6. full-automatic wafer attenuated polishing device according to claim 1, which is characterized in that the first thinned component packet
It includes:
First main shaft, first main shaft be located at it is on the base and rotatable around its axis, and along the axis of first main shaft
To scalable；
Corase grinding wheel, the corase grinding wheel are connected to be roughly ground by first main shaft drives to wafer with first main shaft.
7. full-automatic wafer attenuated polishing device according to claim 1, which is characterized in that the second thinned component packet
It includes:
Second main shaft, second main shaft be located at it is on the base and rotatable around its axis, and along the axis of second main shaft
To scalable；
Finishing grinding wheel, the finishing grinding wheel are connected to be carried out by second main shaft drives to the wafer after corase grinding with second main shaft
Fine grinding.
8. full-automatic wafer attenuated polishing device according to claim 1, which is characterized in that the polishing assembly includes:
Buff spindle, the buff spindle be mounted on it is on the base and rotatable around its axis, and can along the axis of the buff spindle
It is flexible；
Rubbing head, the rubbing head are connected to be driven by the buff spindle to the fine grinding on the polishing station with the buff spindle
Wafer afterwards is processed by shot blasting.
9. full-automatic wafer attenuated polishing device according to claim 1, which is characterized in that according to the processing of the wafer
Sequence is successively arranged the load station, the corase grinding station, the fine grinding station and the polishing station.
10. full-automatic wafer attenuated polishing device according to claim 1, which is characterized in that further include:
Turntable, the turntable are arranged on the base, and the plummer is mounted on the turntable.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910142591.9A CN109848814A (en) | 2019-02-26 | 2019-02-26 | A kind of full-automatic wafer attenuated polishing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910142591.9A CN109848814A (en) | 2019-02-26 | 2019-02-26 | A kind of full-automatic wafer attenuated polishing device |
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| CN109848814A true CN109848814A (en) | 2019-06-07 |
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| CN201910142591.9A Pending CN109848814A (en) | 2019-02-26 | 2019-02-26 | A kind of full-automatic wafer attenuated polishing device |
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Cited By (8)
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| CN110919467A (en) * | 2019-12-24 | 2020-03-27 | 深圳佰维存储科技股份有限公司 | Wafer polishing method |
| CN111430230A (en) * | 2020-06-10 | 2020-07-17 | 清华大学 | Substrate thinning method, substrate thinning equipment and operation method thereof |
| CN112133671A (en) * | 2020-09-22 | 2020-12-25 | 北京北方华创微电子装备有限公司 | Wafer turnover mechanism and wafer cleaning equipment |
| CN112881283A (en) * | 2021-01-11 | 2021-06-01 | 长江存储科技有限责任公司 | Detection method and detection device for bonding degree of wafer and semiconductor process equipment |
| CN115319564A (en) * | 2022-10-12 | 2022-11-11 | 深圳迈菲精密有限公司 | Device and method for thinning hard and brittle wafer material based on constant-pressure composite consolidated abrasive particles |
| CN115401548A (en) * | 2022-08-24 | 2022-11-29 | 河源市众拓光电科技有限公司 | Wafer thinning device and method |
| CN115972078A (en) * | 2022-12-27 | 2023-04-18 | 西安奕斯伟材料科技股份有限公司 | Device and method for double-sided grinding of silicon wafer |
| WO2023123602A1 (en) * | 2021-12-29 | 2023-07-06 | 华海清科股份有限公司 | Rotary wafer exchange system |
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| CN115319564A (en) * | 2022-10-12 | 2022-11-11 | 深圳迈菲精密有限公司 | Device and method for thinning hard and brittle wafer material based on constant-pressure composite consolidated abrasive particles |
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| CN115972078A (en) * | 2022-12-27 | 2023-04-18 | 西安奕斯伟材料科技股份有限公司 | Device and method for double-sided grinding of silicon wafer |
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Application publication date: 20190607 |
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