JP2003100698A - Wafer spin cleaning/drying method and device thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a spin cleaning/drying device capable of carrying out a drying process in a short period of time. SOLUTION: A wafer spin cleaning/drying device is equipped with a vacuum chuck 85 which is provided upright in position on a base 11, and capable of moving up or down in a vertical direction by a cylinder 81 and rotating in a horizontal direction by a motor 83; a brush 94m which moves rectilinearly in a horizontal direction to a bracket 93 fixed to a support 91 installed upright on the base 11, so as to reach a position over the vacuum chuck 85 by a motor 94b and is capable of pivoting in a horizontal direction by a motor 94j; an gas feed mechanism 95 equipped with a gas feed nozzle 95a fixed to a horizontally pivoting arm held by the rotary shaft of the rotary table 162; and a means which detects the position of the gas feed nozzle 95a on the vacuum chuck 85, and reverses the pivoting direction of the rotary shaft of the rotary table 162 when the gas feed nozzle reaches to a prescribed position.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of cleaning a processed surface of a wafer after grinding or polishing the wafer and manufacturing the wafer, and a spin cleaning method used therefor in manufacturing a semiconductor chip. The present invention relates to a drying device. As the wafer, a bare wafer, a device wafer in which a device pattern is applied to the surface of a substrate, or the like is targeted.

[0002]

2. Description of the Related Art IC chips for IC cards have a thickness of 5 with a device pattern formed on the surface of a silicon substrate.
The device pattern surface of the device wafer of 0 to 750 μm is covered with a UV irradiation curable adhesive resin protective tape, the silicon layer on the side opposite to this protective tape is back-ground, and the ground surface is spin-washed. Further, the backside ground surface is etched to reduce the thickness of the device wafer to 250 to 450 μm (Japanese Patent Laid-Open Nos. 2000-269175 and 2000.
-340638). Then, after UV irradiation curing, the protective tape is peeled off from the device wafer, a UV irradiation curable adhesive resin protective tape is attached to the reverse side of the pattern side of the device wafer, and then the device wafer is cut with a dicer. No. 2000-68293 is manufactured by cutting along the grid line of the pattern.

It has also been proposed to perform polishing (polishing) on the ground surface instead of etching after backside grinding, and to perform roll-like brush scrub cleaning (Japanese Patent Laid-Open No. 2000-
225561, 2000-254857).

As described above, after the back surface of the wafer is ground, the wafer polished to remove grinding scratches is
It is used for cleaning in order to remove the processing dust and the abrasive grains attached to the wafer surface. As such a cleaning device, Japanese Patent Laid-Open No.
A cleaning device used for the backside grinding device described in JP-A-1-330036, that is, as shown in FIG.
A wafer that has been ground is placed on a mounting table 2 of a vacuum chuck 3 that can be vertically moved and horizontally rotated so that the processing surface faces upward, and the vacuum chuck is rotated while continuing to rotate. After the cleaning liquid is supplied from the cleaning liquid supply nozzle 6 fixed to the outer cylinder 4 to the center point of the wafer to clean the wafer, the supply of the cleaning liquid is stopped, and then while the rotation of the vacuum chuck is continued, the outer cylinder of the vacuum chuck is also rotated. Cleaning device 11 for drying the wafer surface by blowing air toward the center point of the wafer from a gas supply nozzle 7 fixed to
When No. 3 is used, the cleaning is not sufficient for the next-generation cleaning apparatus for polishing substrates having diameters of 300 mm and 450 mm.

That is, this spin cleaning / drying apparatus is
Depending on the type of wafer, it was polished, washed, and dried as a device wafer cleaning apparatus that requires a highly integrated device with 5 layers or more and a circuit circuit with a diameter of 13 nm or less. It was confirmed by a microscope that the number of debris of invisible diameter adhering to the wafer surface sometimes exceeded the standard value.

Further, the processing area is expanded due to the increase in the diameter of the wafer, and the non-dried portion remains, so that the mounter, the processing / cleaning surface tape attaching step, the device protection tape peeling step in the subsequent step, It was found that in the dicing step and the subsequent steps, particularly in the processing / cleaning surface tape sticking step, the tape adhesive force is reduced.

[0007]

The present invention has a diameter of 300.
The number of wafers (substrates) with a diameter of more than mm that can not be visually observed is smaller than the standard number, and spin drying can be performed in a short time within the throughput time. The present invention also provides a spin cleaning / drying device used for carrying out the method.

[0008]

According to the first aspect of the present invention,
Place the polished wafer on a vacuum chuck that can move up and down and rotate horizontally, with the processing surface facing upward, and supply the cleaning liquid to the center point of the wafer while continuing to rotate the vacuum chuck. While cleaning the wafer by scrubbing the rotating brush on the processed surface, the supply of the cleaning liquid is stopped and the rotating brush is retracted from the wafer surface.
Then, while continuing the rotation of the vacuum chuck, the gas supply nozzle is reciprocally oscillated in an arc shape between the wafer outer peripheral edge where the wafer outer peripheral edge intersects with the wafer center point and the arcuate locus passing through the central point. A method for spin cleaning / drying a wafer, characterized in that a gas is blown from a supply nozzle to the wafer surface to dry the wafer surface.

According to a second aspect of the present invention, in the spin cleaning / drying method of the wafer, the arc-shaped reciprocating swing speed of the gas supply nozzle is 30 to 200 m / min, and the rotation speed of the vacuum chuck is 50 to 6,000 rpm. It is characterized in that the wafer is dried.

Since the spin-rotating wafer is scrub-cleaned on the surface using a rotating brush, scraps of a diameter that cannot be seen are scraped off from the substrate, and the number of scraps remaining on the wafer surface becomes lower than the reference value. . In addition, since the gas is sprayed onto the wafer surface which is spinning while the gas supply nozzle is swung on the wafer, the gas is uniformly dispersed in the radial direction of the wafer, and the wafer surface is uniformly dried.

According to a third aspect of the present invention, a vacuum chuck which is erected on a base stand and can be vertically moved up and down and which is rotatable in a horizontal direction, and a bracket which is fixed to a support stand which is erected on the base stand are linear in the front-back direction. A brush that can be moved to a position on the vacuum chuck and that can rotate in the horizontal direction, and a rotary table that is held by a bracket fixed to a column installed upright on the base. The gas supply mechanism in which the gas supply nozzle is fixed to the horizontal rotation arm held by the rotary shaft of the rotary table, and the position of the gas supply nozzle on the vacuum chuck are detected, A wafer cleaning / drying apparatus, which is provided with means for switching the rotation direction of the rotary shaft of the rotary table to the opposite direction when the supply nozzle comes to a fixed position. .

This is a cleaning / drying apparatus suitable for providing a wafer in which the drying is performed uniformly and the number of adhering debris that cannot be visually observed is within the reference value.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below with reference to the drawings. FIG. 1 is a plan view of a polishing apparatus equipped with the cleaning / drying apparatus of the present invention, FIG. 2 is a front view in which a part of the cleaning / drying apparatus of the present invention is cut away, and FIG. 3 is a cleaning / drying apparatus of the present invention. FIG. 4 is a partial plan view showing a state where the brush and the arm of the robot transfer device are moved to a virtual position on the vacuum chuck. FIG. 4 shows the gas supply nozzle at the origin position on the vacuum chuck in the cleaning / drying device of the present invention. FIG. 7 is a partial plan view showing a state in which the wafer is rotated to a virtual position on the mounted wafer, FIG. 5 is a front view showing a mounting position of the gas supply nozzle, and FIG. 6 is a side view showing a mounting position of the gas supply nozzle. Is a perspective view of the rotary table, and FIG. 8 is a side view of the transfer robot. FIG. 9 is a perspective view of a known backside grinding apparatus, and FIG. 10 is a perspective view of a known spin cleaning / drying apparatus used as a cleaning apparatus for this backside grinding apparatus.

[0014]

EXAMPLE As an example of the present invention, description will be given using an example in which the spin cleaning / drying apparatus 1 of the present invention is installed in a polishing apparatus which is lined up in a line next to a back surface grinding apparatus and arranged side by side.

First, the back surface grinding device 101 will be briefly described. In the back side grinding apparatus 101 shown in FIG. 9, the back side grinding apparatus 101 has left and right cassettes 117 arranged in pairs in a front row, and a wafer temporary mounting table 106 is provided on the base on the rear side of the left cassette and on the rear side of the right side cassette. The wafer cleaning mechanism 113 shown in FIG. 3 is arranged as a pair in the next row, and an index turntable is provided at a position where the central portion of the wafer temporary mounting table 106 and the base of the cleaning apparatus 113 shown in FIG. The table 108 is provided with three wafer chuck mechanisms 107, 107, 107 rotatable about the axis of the harmful table in the index table so as to rotate at equal intervals. Wafer blank
The table is divided into a ding zone s1, a rough grinding zone s2, and a finishing grinding zone s3, and a frame 11 which stands upright from the base is provided in the rear row of the index turn table 108.
In FIG. 1, a grinding mechanism in which a grindstone 111d suitable for each grinding zone is supported by a spindle shaft 111c is provided corresponding to a wafer chuck mechanism located in each grinding zone.

The elevating mechanism 103, the rotation driving mechanism, the wafer alignment measuring mechanism, and the arms 115a, approximately at the center of the base located between the row of the pair of cassettes and the row of the wafer temporary placing table and the cleaning mechanism. A multi-joint type transfer robot 115 having a control mechanism for driving 115b and 115c is installed upright, and the device wafer on the temporary table is index-table wafer loading / unloading zone.
It can be transferred to the chuck mechanism of s1. 2/3 to 4/3 times the diameter of the device wafer provided on the handle 112 rotatably mounted on a pair of shafts provided on the left and right of the substantially central portion of the base provided with the index turn table. The suction pads 112a and 112a each having a diameter are used to grind the device wafer on the temporary mounting table onto the chuck mechanism of the wafer loading / wafer unloading zone, and to grind the back surface on the chuck mechanism of the wafer loading / wafer unloading zone. The device wafer thus prepared is transferred onto the vacuum chuck of the cleaning mechanism.

Each of the chuck mechanisms of the index turn table has a chuck cleaning mechanism 109b mounted on a driving body which is movable in the left-right direction on a screw rod provided on a frame 110 standing upright from a base and a ceramic cleaning mechanism. Chuck cleaner 10
It is washed with 9a.

A polishing device 20 shown in FIG. 1 is arranged next to the back surface grinding device 101. In FIG. 2, 113 is
Cleaning mechanism 113 of the grinding device (Japanese Patent Laid-Open No. 11-3300)
No. 36). The polishing apparatus 20 includes the spin cleaning / drying apparatus 1 and the wafer storage cassettes 10 and 1 of the present invention.
0, partition wall 2 of back grinding device 101 and polishing device 20
1, a double arm transfer robot 30, a polishing platen 51 with a polishing cloth attached to the lower surface, a substrate chuck mechanism 52 provided below the polishing platen, and a polishing platen 51 with a rotating shaft 53.
A rotating mechanism 54 (servo motor 54a and speed reducer 54b) for rotating around and moving on the dresser 70, a chuck cleaning device 60 for cleaning the substrate chuck mechanism, a dresser 70 for dressing the polishing platen 51. Equipped with.

As shown in FIGS. 1 and 8, the double arm transfer robot 30 is provided with a support plate 32 horizontally on an upper part of a column 31 standing upright from the base 11 of the polishing apparatus. The first rotary shaft 33 is arranged on the plate 32, and the rotary moving arm 34 is provided on the first rotary shaft so as to be rotatable around the first rotary shaft core 33a. A second rotating shaft 35 is provided below the end of the arm 34, is covered with a bellows 35b, and a gear box 36 is provided below the rotating shaft to rotate a pair of arms 38, 38.
The rotating shafts 37, 37 are provided. Arms 39, 39 are rotatably attached to the lower portions of the third rotating shafts 37, 37 under the arms 38, 38, and steps (40) are attached to attachments 40, 40 provided on the arms 39, 39. Grip 4 with a height difference)
The arms 41, 41 provided with 1a, 41b are fixed. In FIG. 1, the double arm transfer robot 30 shown by the solid line at the left end shows the origin returning position in the polishing apparatus 20, and is in a position to receive the wafer from the cleaning apparatus 113 of the backside grinding apparatus.

Further, in FIG. 1, the double arm transfer robot 30 shown in the center of the drawing by a phantom line is used when a substrate (backside grinding wafer) is placed on the substrate chuck mechanism 52 or when a substrate (wafer is moved on the substrate chuck mechanism 52). 2) shows a standby position when the wafer is held and transported, and the wafer is transported onto the spin cleaning / drying apparatus 1 or when the wafer is stored in the storage cassette 10. The gripping tools 41b, 41b of the double-arm transfer robot are used to transfer a wafer that has been finely polished, while the gripping tools 41a, 41a of the double-arm transfer robot are used.
When used exclusively for transporting a wafer whose back surface has been ground from the cleaning device 113, dirt does not adhere to the polished substrate housed in the cassette 10.

The diameter of the ceramic chuck of the substrate chuck mechanism 52 provided below the polishing platen is 1/2 to 2 with respect to the diameter of the polishing platen 51 having a polishing cloth attached to the lower surface.
The size is / 3. The backside ground device wafer is fixed under reduced pressure to the substrate chuck mechanism 52 with the device surface having the protective film attached to the lower surface and the processed silicon wafer surface facing upward. In order to eliminate grinding scratches on the back-ground silicon wafer surface, the rotating polishing platen 51 is lowered while supplying the polishing liquid to the horizontally rotating silicon wafer surface, and the polishing platen 51 is moved to the silicon wafer surface. The wafer is polished by sliding on it.

At this time, by rotating the rotary shaft 53, polishing is carried out while reciprocally swinging the polishing platen 51 in an arcuate width passing through the center point o of the wafer and passing through the outer peripheral point p of the wafer, so that polishing is more uniform. Process so that the surface is obtained. The reference numeral 55 in FIG. 1 indicates that the polishing liquid is the substrate chuck 52.
It is a hood that prevents scattering to the outside.

A chuck cleaning device 60 for cleaning the ceramic chuck of the substrate chuck mechanism 52 is provided with a ceramic brush 62 attached to a shaft rotated by a motor (not shown). 63
Is supported by a pillar 61 standing upright from the base so as to be linearly movable back and forth in the direction of the center point of the ceramic chuck.

When the polishing of the wafer is completed, the polishing platen 5
1 has risen and the depressurization of the substrate chuck mechanism 52 has been stopped, the double arm that was waiting in the center shown by the phantom line in FIG.
The arm of the arm transfer robot 30 moves, moves linearly, moves up and down, and holds the outer edge of the polished wafer by the holding tools 41b and 41b of the double arm transfer robot and moves up and down again. The wafer w, which has been subjected to linear movement, rotation, and the like and has been polished, is transferred onto the spin cleaning / drying apparatus 1.

In the dresser 70 for dressing the polishing platen 51, a dresser grindstone 72 is slid on the polishing platen surface from below to restore the sharpening of the polishing cloth, and high pressure jet water is sprayed from a nozzle 73 to the polishing platen. This is to wash off the adhered polishing dust and abrasive grains. The rotation of the rotary shaft 53 causes the polishing platen 51 shown by the phantom line in FIG. 1 to be rotated on the dresser 70, and the disk-shaped dresser grindstone 72 installed in the outer cylinder 71 communicating with the drain pipe is slid. High pressure jet water jet nozzle 7
From No. 3, high-pressure jet water is sprayed on the polishing cloth of the polishing platen 51 for cleaning. 74 is a gas supply nozzle.

The position of the polishing platen 51 on the dresser 70 is the polishing platen standby position when the double arm transfer robot 30 places the substrate on the substrate chuck mechanism 52.

Next, the structure of the spin cleaning / drying apparatus 1 of the present invention will be described. The spin cleaning / drying apparatus 1 mainly includes a substrate mounting mechanism 80 and a substrate cleaning / drying mechanism 90. As shown in FIGS. 1 and 2, the substrate mounting mechanism 80
Is provided with an air cylinder 81 in a space of the base 11, an L-shaped connecting member 81b is fixed to the tip of the air cylinder rod 81a, and a motor 83 is fixed to the lower surface on the upper surface of the L-shaped connecting member. The supporting plate 81c is fixed. Support plate 8
The center of 1c is hollowed out, and a hollow spindle 82 is provided in the vertical direction. The pulley 83d attached to the outer periphery of the lower part of the hollow spindle 82 receives the rotational force of the motor 83 from the pulleys 83b and 83c attached to the outer periphery of the rotating shaft 83a, and rotates in the horizontal direction.

The lower end surface of the hollow spindle 82 is connected with a rotary joint 84 having an opening 84a for introducing or discharging air into a tube 82a provided in the hollow portion of the hollow spindle shaft 82, which is not shown. A branch pipe is connected to the compressor and the vacuum pump to the port 84a, and a switching valve (not shown) is provided therebetween.

On the upper end surface of the hollow spindle 82, there is a disk-shaped porous ceramic plate 8 mounted on a disk-shaped supporting member 85a having a step portion on the inner circumference and a plurality of annular shelves 85c on the bottom portion.
5 is supported, and the substrate w is placed on the disk-shaped porous ceramic plate 85. A chamber 85d is provided between the support member 85a and the porous ceramic plate 85. The plurality of ring-shaped shelves 85c each have a communication hole or a groove, and the plurality of chambers 85 formed by these ring-shaped shelves 85c and the lower surface of the disk-shaped porous ceramic plate 85 are arranged so that the gas is mutually chambers. It has a distribution structure.

By depressurizing the chamber 85d with a vacuum pump, the substrate w is fixed (chucked) to the disk-shaped porous ceramic plate 85. By introducing pressurized air supplied by the compressor to the chamber 85d, the disk-shaped po
The peeling from the lath ceramic plate 85 is facilitated.

The center of the pan 86 of the positioning mechanism is hollowed out, and the hollow spindle 82 penetrates through it. Saucer 86
A plurality of protrusions 86c that are inclined 86b in an arc shape are provided on the inside of the rising outer periphery 86a, and the substrate slides on the inclined surfaces of the protrusions 86c to enable centering (centering). By raising the disk-shaped porous ceramic plate 85 to a position higher than the edge rising portion 86c of the tray 86 by the lifting air cylinder 81, the double arm transfer robot 3
It is easy to grip the substrate with the gripping tools 41b and 41b of 0.

The tray 86 and the hollow spindle 82 are protected by an outer cylinder 87 fixed to a support member 88 provided on the base 11. A cleaning liquid supply nozzle 89 is fixed to the outside of the outer cylinder 87. The nozzle tip angle is adjusted so that the cleaning liquid reaches the center of the substrate on the disk-shaped porous ceramic plate 85.

The substrate cleaning / drying mechanism 90 comprises the cleaning liquid supply mechanism 89, the brush scrub cleaning mechanism 94, and the gas supply mechanism 95. A hollow pillar 91 is erected on the base 11, and a mounting case 92 having a plurality of rails 92a, 92a inside is fixed to the hollow pillar 91 via a bracket 93. A brush scrub cleaning mechanism 94 is provided on the front side of the mounting case 92, and a gas supply mechanism 95 is provided on the lower surface of the mounting case 92.

The brush scrubbing cleaning mechanism 94 comprises a movable body 9 which moves horizontally on the rails 92a, 92a.
4a, a servomotor 94b for giving a driving force for linearly reciprocating the movable body 94a in a lateral direction, and a mounting case 9
2, the timing belts 94c, 94c provided on the movable body 94a, and the lifting cylinder 94 fixedly provided on the front surface of the movable body 94a.
d, a movable body 94f vertically moving on a rail 94e attached to the lifting cylinder 94d, and a brush housing 94h fixed to the movable body 94f via an attachment member 94g.

A spindle 94i is housed in the brush housing 94h and is rotationally driven by a servo motor 94j. A brush fixing plate 94k is fixed to the tip of the spindle 94i, and a pair of brushes 94m, 94m are provided on the lower surface of the fixing plate at symmetrical positions with respect to the spindle 94i axis. A transparent resin hood 94l that protects the pair of brushes 94m, 94m is suspended below the flange 94p of the bearing 94n provided on the outer periphery of the lower portion of the spindle 94i.

A bracket 93 is provided below the mounting case 92.
A gas supply mechanism 95 is provided via the. Gas supply mechanism 95
Is mainly a gas supply nozzle 95a, a gas supply pipe 95b communicating with the gas supply nozzle 95a, a gas supply nozzle mounting arm 95c, and a rotary for rotating the gas supply nozzle mounting arm 95c.
Table 162, limit switches L ₁ , L ₂ , L _{3 of} the detection means for detecting the position of the gas supply nozzle 95a with respect to the substrate w adsorbed on the vacuum chuck of the mounting stage, and on-off signals of these limit switches. In response to
The tally table 162 has means 162c and 162d for switching the rotation direction of the rotary shaft to the opposite direction.

The gas supply pipe 95b communicating with the gas supply nozzle 95a is provided with a rotary table 16 as shown in FIG.
Via the central part of the swing table 162e
It is housed inside and the end is connected to a pump (not shown). The gas supply nozzle 95a is an arm 95c.
One end of this arm is fixed to the lower surface of the swing table 162e of the rotary table 162 with a bolt. The rotary table 162 includes a right angle adjusting bolt 162a, a left angle adjusting bolt 162b, and a right angle adjusting bolt 162a, as shown in FIG.
The swing table 162e is provided and is fixed upside down on the bracket 93.

[0038] Each of the on signal of the limit switch _{L 1,} L 2, _{L 3} is that a _{L 1} as shown in Figure 4 the nozzle position exists at the right end peripheral position or left peripheral position of the substrate w, _{L 2} Indicates that the nozzle position exists at the center point position of the substrate w, and that L ₃ exists at the origin position where the nozzle is indicated by a solid line. Receiving these signals, the air supply port 16
The rocking table 162e is changed by changing the air supply timing to 2c and the air exhaust from the air exhaust port 162d and the air amount.
Rotate.

On-o between limit switches L ₁ and L ₂
In ff switching, the gas supply nozzle 95a oscillates in an arc between the substrate center point and the right end outer peripheral position or the left end outer peripheral position of the substrate. L ₃ is a command to return the nozzle to the origin from the controller of the cleaning / drying device when the substrate thickness measuring device (not shown) detects a desired thickness or when the cleaning time set in the processing program is reached. Is output to the rotary table 162, and when the nozzle returns to the origin position, L ₃ is turned on, and the cleaning / drying of the substrate is completed.

To clean the substrate w, the polished substrate (wafer) is placed on the vacuum chuck 85 so that the processed surface faces upward, and the cleaning liquid is discharged from the nozzle 89 by the nozzle 89 while continuing the rotation of the vacuum chuck. While supplying to the center point, the brushes 94m, 94m rotating on the processing surface of the substrate are lowered, scrub cleaning is performed by sliding on the substrate surface, then the brush is raised, and then the brush is retracted to the left for a while. After flowing the cleaning liquid, the supply of the cleaning liquid is stopped, and then the mounting arm 95c is rotated by the rotary table 162 to move the gas supply nozzle onto the substrate.

Then, while continuing the rotation of the vacuum chuck, the gas supply nozzle 95c is oscillated in a circular arc between the substrate outer peripheral edge where the center point of the substrate intersects the substrate outer peripheral edge, and the gas supply nozzle 95c is moved to the substrate surface from the gas supply nozzle. A gas is blown to dry the substrate surface. Alternatively, the substrate surface is dried by spraying gas onto the substrate surface from the gas supply nozzle while reciprocating between the right and left substrate outer peripheral edges where the arc-shaped locus passing through the center point and the substrate outer peripheral edge intersect.

The arc-shaped reciprocating rocking speed of the gas supply nozzle 95c is 30 to 200 m / min, and the rotation speed of the vacuum chuck is 50.
It is preferred to dry the substrate at ~ 6,000 rpm.

After the spin drying of the substrate is completed, the mounting arm 95b of the gas supply nozzle 95a is rotated to return the gas supply nozzle 95a to the original position, and the cylinder 81 raises the disk-shaped porous ceramic plate 85. Then, the substrate on the disk-shaped porous ceramic plate 85 is grasped by the grasping tools 41b, 41b of the double arm transfer robot 30, and the chamber 8
After the depressurization to 5d is stopped and the compressed air is instantaneously supplied to the chamber 85d to facilitate the separation of the substrate, the substrate is transferred into the cassette 10 by the double arm transfer robot 30. Then, the rotary movement arm 34 of the double-arm transfer robot 30 is rotated to move the double-arm transfer robot 30 to the standby position at the left end shown by the solid line in FIG. We are now ready to load our board.

In the above embodiments, the polishing process using the polishing platen as means for eliminating the grinding scratches on the substrate whose back surface has been ground has been explained, but 2,400 to 4 containing barium carbonate particles in place of the polishing platen. No. 000 fixed grindstone (600-800 No. 1st grindstone and 1200 No. 1,800 No. 2nd grindstone are used for the back side grinder), and dry polishing to eliminate grinding scratches. You may

[0045]

Since the spin cleaning / drying apparatus 1 of the present invention scrub cleans the spin-rotating wafer using the rotating brush 94m, scraps of invisible diameter are scraped off from the substrate. The number of scraps remaining on the surface became lower than the standard value. Further, since the gas is sprayed onto the wafer surface which is spinning while reciprocally swinging the gas supply nozzle 95a in an arcuate locus on the wafer, the gas is uniformly dispersed in the wafer radial direction and the wafer surface is uniformly dried. To be done.

Since the double arm transfer robot 30 is hung upside down and the substrate gripping tool is brought to the lowest position, the vacuum chuck 52 of the polisher and the spin cleaning.
Since the vacuum chuck 85 of the drying device 1 can be installed near the base 11, polishing and cleaning operations are facilitated, and the arm, gear box, etc. of the double arm transfer robot 30 are also present on the base, so that the double arm can be used. -Inspection of the robot 30
Repair work is easy.

[Brief description of drawings]

FIG. 1 is a plan view of a polishing apparatus including a cleaning / drying apparatus of the present invention.

FIG. 2 is a front view in which a part of the cleaning / drying device of the present invention is cut away.

FIG. 3 is a partial plan view showing a state where the brush and the arm of the robot transfer device are moved to virtual positions on the vacuum chuck in the cleaning / drying device of the present invention.

FIG. 4 is a partial plan view showing a state in which the gas supply nozzle at the origin position is rotated to a virtual position on a wafer placed on a vacuum chuck in the cleaning / drying apparatus of the present invention.

FIG. 5 is a front view showing a mounting position of a gas supply nozzle.

FIG. 6 is a side view showing a mounting position of a gas supply nozzle.

FIG. 7 is a perspective view of a rotary table.

FIG. 8 is a side view of the transfer robot.

FIG. 9 is a perspective view of a backside grinding device. (Public)

FIG. 10 is a perspective view of a known spin cleaning / drying device.

[Explanation of symbols]

1 Spin cleaning / drying equipment 101 back grinding machine 113 Cleaning device for backside grinding device 20 Polishing device 30 double arm transfer robot w Device wafer 80 Board mounting stage 81 Lifting Air Cylinder 83 Servo motor 85 Disk-shaped porous ceramic plate 86 saucer 89 Cleaning liquid supply nozzle 90 Cleaning / drying mechanism 94 Brush scrubbing mechanism 94m brush 95 Gas supply mechanism 95a Gas supply nozzle 162 rotary table

Claims (3)

[Claims] 1. A wafer, which has been polished, is placed on a vacuum chuck that can be moved up and down and rotated horizontally, with the processing surface facing upward, and the cleaning liquid is applied to the wafer while continuing rotation of the vacuum chuck. After cleaning the wafer by scrubbing the rotating brush on the processing surface while supplying it to the center point of
The supply of the cleaning liquid is stopped and the rotary brush is retracted from the wafer surface. Then, while continuing the rotation of the vacuum chuck, the gas supply nozzle intersects the wafer center point and the arc-shaped locus passing through the center point and the wafer outer edge. A method of spin cleaning / drying a wafer, characterized in that a gas is sprayed onto the wafer surface from the gas supply nozzle while reciprocally swinging between the outer peripheral edges of the wafer in an arc shape to dry the wafer surface. 2. The arc-shaped reciprocating rocking speed of the gas supply nozzle is 30 to 200 m / min, and the rotation speed of the vacuum chuck is 50 to 50 m / min.
The spin cleaning / drying method for a wafer according to claim 1, wherein the wafer is dried at 6,000 rpm. 3. A vacuum chuck which is erected on a base and can be moved up and down in the vertical direction and which can be rotated horizontally. A vacuum chuck which is linearly moved in the front-rear direction on a bracket fixed to a column erected on the base. A brush that can be moved to an upper position and that can rotate in a horizontal direction, and a brush that is fixed to a bracket that is erected on the base stand.
A gas supply mechanism in which a gas supply nozzle is fixed to a horizontally rotating arm that holds a tally table and is held by a rotary shaft of the rotary table, and on a vacuum chuck of the gas supply nozzle. And a means for switching the rotation direction of the rotary shaft of the rotary table to the opposite direction when the gas supply nozzle comes to a fixed position, and cleaning and drying the wafer. apparatus.