JP2011124249A - Processing device and method for flattening semiconductor substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flattening device for manufacturing semiconductor substrates with less attachment of foreign matters, which thins and flattens the substrates by grinding and polishing the back surfaces of the semiconductor substrates with high throughput. <P>SOLUTION: The flattening device 1 houses respective machine components in a loading/unloading stage chamber 11a of a semiconductor substrate, a back polishing stage chamber 11c, and a back grinding stage chamber 11b. In the flattening device 1, the throughput time of a back polishing stage 70 for polishing two substrates simultaneously is set to approximately twice longer than that of a back grinding stage 20 for grinding one substrate. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention grinds and polishes the back surface of a semiconductor substrate such as a next generation DRAM, SOI wafer, 3D-TSV wafer (Through Silicon Vias wafer), sapphire substrate or the like having a diameter of 300 to 450 mm in a pretreatment process of an IC substrate. The present invention relates to a planarization apparatus used for thinning and planarizing a substrate and a method for planarizing a semiconductor substrate. In particular, when thinning and planarizing a silicon base layer of DRAM up to a thickness of 20 to 70 μm, or when thinning and flattening a substrate at an upper position of a laminated substrate such as a TSV wafer or an SOI wafer. The present invention relates to a planarization processing apparatus and a planarization processing method for a semiconductor substrate that can be processed without causing cracks or chipping in the semiconductor substrate.

  Planarization processing apparatus comprising a substrate loading / unloading stage, a substrate grinding stage, a substrate polishing stage, and a substrate cleaning stage as a planarization processing apparatus that thins and mirrors a substrate by grinding and polishing a semiconductor substrate Has been proposed and put to practical use. A flattening processing apparatus is proposed in which a substrate storage cassette for a substrate load port is provided outdoors. These planarization apparatuses have the capability of performing a throughput of 7 to 20 wafers / hour for planarizing a semiconductor substrate having a diameter of 300 mm to a thickness of about 750 μm.

  For example, Japanese Patent Laid-Open No. 2001-252853 (Patent Document 1) is formed with a grinding means for grinding a wafer, a polishing means for polishing a wafer ground by the grinding means, and a diameter smaller than the diameter of the wafer. A wafer holding member, a chamfering means having a chamfering grindstone for chamfering the periphery of the wafer held by the wafer holding member, and a conveying means or a polishing means for conveying the wafer after chamfering by the chamfering means to the grinding means. And a planarization apparatus provided with a transfer means for transferring the wafer after polishing by the wafer holding member of the chamfering means, and after mounting the ground and polished wafer on the stage of the chamfering means, Chamfering the sharp edge of the polished wafer with a chamfering grindstone, and then storing this flattened wafer in a cassette There has been proposed.

  Japanese Patent Laid-Open No. 2005-98773 (Patent Document 2) has four sets of substrate holder tables (vacuum chucks) installed on the same index-type rotary table, and one of the substrate holder tables is loaded / unloaded. A rotating spindle equipped with a rough grinding cup wheel diamond wheel, a rotating spindle equipped with a finish grinding cup wheel diamond wheel, and a rotating spindle equipped with a dry polished flat grinding wheel were arranged above the remaining three substrate holder tables. A flattening device is proposed.

Further, US Pat. No. 7,238,087 (Patent Document 3) by the applicant of the present patent application discloses a substrate flattening apparatus 10 shown in FIG. The flattening apparatus 10 includes a plurality of substrate storage stages (load ports) 13 outside the room, and an indoor articulated transfer robot 14, a temporary positioning table 15, a movable transfer pad 16, and a substrate on the base 11. The substrate holders 30a, 30b, and 30c constituting the three stages of the loading / unloading stage S ₁ , the rough grinding stage S ₂ , and the finish grinding stage S ₃ are arranged concentrically on the first index type rotary table 2. grinding stage 20 and the substrate holder table 70a constituting the substrate loading / unloading / finish polishing stage ps _1, the substrate holder table 70b constituting the rough grinding stage ps ₂ concentrically to the second index rotary table 71 Substrate flattening processing provided with the arranged polishing stage 70 It is a device. This flattening apparatus is commercially available from Okamoto Machine Tool Co., Ltd. under the trade name GDM300.

The applicant of the present patent application is also disclosed in Japanese Patent No. 4,260,251 (Patent Document 4), wherein a plurality of (n groups; n is an integer of 2 to 4) polishing disks are arranged on the same circumference. A base that is arranged on the base, an index type head that rotatably supports a plurality of (n + 1) chuck mechanisms on the rotating shaft above the base, a wafer before polishing transferred from the cassette, and A wafer polishing apparatus comprising a wafer cradle on which a polished wafer transferred by a chuck mechanism is placed, holds the wafer from the back surface by a chuck mechanism, and presses the surface against a polishing disk to polish the wafer surface , The circumference connecting the center lines of the rotation axes of the plurality of chuck mechanisms lies on the circumference, and the cradle is provided with a wafer receiving plate and a rotating brush for cleaning the chuck mechanism integrally arranged in a straight line. And rotating with the backing plate A cradle provided side by side with a lash is provided so as to be able to advance and retreat in a straight line direction, and the cradle is arranged such that a vertical surface in a linear direction in which the cradle moves forward and backward is below the index head and intersects the circumference A wafer polishing apparatus provided in a linear direction so as to freely advance and retract has been proposed, and is commercially available under the trade names PNX200 and PNX300.

Japanese Patent Application Laid-Open No. 2007-165802 (Patent Document 5) is a substrate flattening apparatus for holding and grinding and polishing on four adsorption tables provided on an index type turntable with the back side of the substrate facing up. There,
A rotating blade (cutting means) that performs a process of cutting the outer edge portion from the back surface to the outer edge portion (edge portion) of the substrate before the grinding process adsorbed on the adsorption table;
A grinding wheel provided with a grinding wheel arranged to face the suction table, and grinding the substrate by pressing the grinding wheel while rotating the grinding wheel against the back surface of the substrate while holding the substrate, the outer edge of which has been cut. Two grinding wheels (grinding means)
A polishing puff (polishing pad) disposed opposite to the suction table is provided, and the ground puffed substrate is held on the suction table and pressed against the back surface of the substrate while rotating the polishing puff. Equipped with a polishing puff (polishing means) for polishing,
These flattening devices are installed indoors, and a plurality of load ports (substrate storage cassettes) are provided outside the room.
The present invention proposes a substrate flattening apparatus including a two-barrel type substrate transfer robot, an alignment temporary table, and a cleaning device in a room behind the load port.

The cutting means (rotating blade) of this flattening apparatus has many opportunities to cause chipping of the substrate during grinding, polishing and substrate transfer in the flattening apparatus of Patent Document 1, and the loss rate of the processed substrate is high. Therefore, the entire outer edge portion of the substrate is cut and removed by the rotating blade, and the chipping and cracking of the semiconductor substrate which are generated at the peripheral portion of the substrate are suppressed.

The patent applicant of the present application has filed Japanese Patent Application No. 2008-183398 (Patent Document 6). This specification describes an articulated transfer robot, an edge chamfering tape with an alignment function, and a substrate storage stage outside the room. In a substrate flattening apparatus comprising a polishing apparatus, a grinding stage, a pair of ceiling-suspended movable transfer pads, a polishing stage, a substrate chemical cleaning apparatus, and a room,
From the front side to the back side of the flattening apparatus, a substrate storage stage is provided on the right side outside the room,
In the room, an articulated transfer robot is placed at the right position near the substrate storage stage in the front row of the room, a polishing stage is placed at the center position on the left side of the articulated transfer robot, and a left position on the left side of the polishing stage. A substrate drug cleaning stage comprising a substrate drug cleaning device is provided, and a first dry air blowing device is provided between the articulated transfer robot and the polishing stage,
Edge chamfering tape polishing equipment with alignment function on the right side of the rear row of the articulated transfer robot, and substrate loading / unloading stage, rough grinding stage in the clockwise direction on the rear row center side of the articulated transfer robot, and In addition, there is provided a grinding stage in which three substrate holder tables constituting three stages of the finish grinding stage are arranged concentrically on the first index type rotary table, and the articulated transfer robot and the substrate loading / substrate unloading stage A pair of ceiling-suspended substrate transfer pads is provided at a position sandwiching the substrate, and a third substrate transfer pad and a second dry air blowing device are arranged in the rear row of the substrate chemical cleaning stage and on the left side of the polishing stage. Side by side,
A cleaning apparatus having a rotary chuck cleaner for cleaning the upper surface of the substrate holder table and a pair of rotary cleaning brushes for cleaning the surface of the substrate that has been subjected to finish grinding is disposed above the substrate holder table constituting the substrate loading / unloading stage. Provided so that it can move vertically and parallel to the upper surface of the holder table.
A spindle having a rough grinding cup wheel type diamond grinding wheel is provided above the substrate holder table constituting the rough grinding stage so as to be movable up and down relative to the upper surface of the substrate holder table, and finish grinding is performed above the substrate holder table constituting the finish grinding stage. A spindle equipped with a cup wheel type diamond grinding wheel is provided so that it can be raised and lowered relative to the upper surface of the substrate holder table.
A substrate loading / substrate unloading stage is configured by the substrate holder table, the articulated transfer robot, a pair of ceiling-suspended substrate transfer pads, and a cleaning device including a rotary chuck cleaner and a rotary cleaning brush, and the substrate holder A rough grinding stage is composed of a table, the rough grinding cup wheel diamond wheel and a two-point in-process gauge, and the substrate holder table, the finish grinding cup wheel diamond wheel and a non-contact type substrate thickness measuring device are used for finishing. Composing the grinding stage,
The polishing stage is provided as a polishing stage in which a substrate holder table constituting a substrate loading / unloading / finish polishing stage and a substrate holder tail constituting a rough polishing stage are arranged concentrically on a second index type rotary table. ,
Above the substrate holder table constituting the finish polishing stage, a spindle for rotatably supporting a cleaning liquid supply mechanism and a polishing pad is provided so as to be movable up and down and swingable in parallel with the upper surface of the substrate holder table. The polishing pad, the cleaning liquid supply mechanism, the movable transfer pad and the articulated transfer robot or another transfer pad or the articulated transfer robot constitute a substrate loading / unloading / finish polishing stage,
A substrate rough polishing stage is constituted by the substrate holder table and the polishing pad above the substrate holder table constituting the rough polishing stage, and the spindle for rotatably supporting the abrasive slurry liquid supply mechanism and the polishing pad is constituted by the substrate holder table and the polishing pad. A semiconductor substrate planarization processing apparatus has been proposed.

JP 2001-252853 A JP 2005-98773 A US Pat. No. 7,238,087 Patent No. 4,260,251 JP 2007-165802 A Japanese Patent Application No. 2008-183398

  Semiconductor substrate processing manufacturers who want to reduce the thickness of the silicon base layer of next-generation 300mm diameter and next-generation 450mm diameter semiconductor substrates to 20-50μm are the flattening process as substrate flattening processing equipment. Request for the emergence of flattening processing equipment with compact equipment (small footprint), 300mm diameter semiconductor substrate throughput of 20-25 sheets / hour, 450mm diameter semiconductor substrate throughput of 7-12 sheets / hour is doing. In addition, there is a demand for the appearance of a planarization apparatus capable of throughput of 10-15 wafers / hour of a grinding / polishing TSV wafer in which the electrode head protrusion height of a 300 mm diameter TSV wafer is 0.5 to 20 μm.

  In the planarization processing apparatus described in Patent Document 1 and Patent Document 5 and the like, the (end surface) back surface grinding process and the back surface polishing process of the semiconductor substrate are performed on the same index type rotary table, so that the polishing stage portion is a grinding stage. There is a drawback that it is easily soiled by the generated grinding waste. In particular, when the polishing stage of the flattening apparatus is used for projecting a head of a TSV wafer (through electrode wafer) (1 to 20 μm high), the presence of these grinding scraps becomes a fatal defect.

Furthermore, the edge cutting rotary blade of Patent Document 5 and the polishing tape edge chamfering apparatus described in Patent Document 6 have a drawback that partial edge chamfering of laminated wafers such as TSV wafers and SOI wafers is not possible. Moreover, the protective tape protecting the printed wiring surface of the semiconductor substrate is peeled off at the base edge portion, and grinding scraps and polishing scraps are likely to adhere to the outer periphery of the base edge.

  Furthermore, in the production of next-generation 450 mm diameter semiconductor substrates, the area to be flattened is 2.25 times larger than the 300 mm diameter semiconductor substrate. Therefore, even if the semiconductor substrate planarization apparatus described in the prior art patent document group is simply enlarged, high throughput cannot be achieved, and a clean semiconductor substrate cannot be obtained.

  The present invention replaces the polishing stage of the flattening apparatus for semiconductor substrates described in Patent Document 3 and Patent Document 6 with a 4-index type turn head in place of the 2-chuck polishing head described in Patent Document 4, and the semiconductor substrate in the polishing stage. Semiconductor substrate flattening that enables chamfering of the partial edge portion of the laminated wafer by improving the polishing time (throughput) of the wafer and changing the rotating blade of the edge portion cutting means described in Patent Document 5 to a grinding wheel The purpose is to provide a device.

According to the first aspect of the present invention, the chamber for installing the planarizing apparatus is loaded from the front portion into an L-shaped semiconductor substrate loading / unloading stage chamber, the intermediate semiconductor substrate polishing stage chamber, and the back semiconductor substrate grinding. The processing stage chamber is divided into three chambers by partition walls, and the partition walls between the stage chambers are provided with openings through which the substrates leading to the adjacent stage chambers can be taken in and out, and the front wall of the loading / unloading stage chamber A semiconductor substrate flattening apparatus provided with a plurality of load port substrate storage cassettes outside the room,
A first transfer type articulated substrate transfer robot is provided in the chamber behind the load port in the loading / unloading stage chamber of the semiconductor substrate, a substrate cleaning device on the left side, and a first above the substrate cleaning device. Provided with a second transfer-type articulated substrate transfer robot at the back rear of the first positioning temporary table,
In the polishing stage chamber, a temporary mounting table surface plate provided with four circular temporary mounting tables on which the four substrates can be placed on the same circumference and at equal intervals, and two substrates are polished. The first, second, and third polishing surface plates of a planar circular polishing surface plate are installed so that the center points of these four surface plates are on the same circumference and can be rotated at equal intervals. And three dressers for dressing the polishing cloth of the polishing surface plate on the side of each of the three polishing surface plates, and one index type above the four surface plates. A substrate suction chuck mechanism comprising a head, and a pair of substrate suction chucks for suctioning the surface of the substrate to be polished downwards at the same time, independently and rotatably supported on the main shaft below the index type head A group capable of adsorbing and fixing eight substrates with four concentric circles arranged concentrically The polishing stage, each chuck means provided two pairs of each substrate adsorption chuck made it possible to face corresponding to one of four of the plate is provided,
In the semiconductor substrate grinding stage chamber, the second positioning temporary table is provided on the back side of the second transfer type articulated substrate transfer robot, and the hand arm front and back are on the right side of the second positioning temporary table. A rotary third articulated transfer robot is provided, a substrate front / back surface cleaning device is provided on the side of the third articulated transfer robot, and four pairs of substrate chuck tables are provided on the right side of the substrate front / back surface cleaning device. Are mounted on a single index type turntable so that they can rotate at equal intervals on the same circumference, and the four pairs of substrate chuck tables are loaded / unloaded stage chucks, substrate edge grinding stage chucks, The substrate rough grinding stage chuck and the substrate finishing grinding chuck position are index-stored in the numerical controller, and the substrate edge An edge grinding device is provided next to the grinding stage chuck to move the edge grinding wheel forward and backward and up and down, and the cup wheel type rough grinding wheel can be moved up and down and rotated above the substrate rough grinding stage chuck. And a cup wheel type finishing grinding wheel is provided above the substrate finishing grinding stage chuck so as to be movable up and down and rotatable, and the third articulated transfer robot is provided with a semiconductor on the second positioning temporary table. The substrate is transferred onto the loading / unloading stage chuck, the semiconductor substrate on the loading / unloading stage chuck is transferred onto the substrate front / back surface cleaning device, and the semiconductor substrate on the substrate front / back surface cleaning device is moved to the polishing stage. Gives the function of transferring to the temporary table surface plate in the room Providing a grinding stage chamber,
The present invention provides a planarization apparatus for a semiconductor substrate.

According to a second aspect of the present invention, there is provided a method for flattening a back surface of a semiconductor substrate using the semiconductor substrate flattening apparatus according to the first aspect, wherein the back surface of the semiconductor substrate is flattened through the following steps. Is to provide.
1) A semiconductor substrate stored in a substrate storage cassette is moved into a loading / unloading stage chamber using a first transfer type articulated substrate transfer robot, and further transferred onto a positioning temporary placement table. The semiconductor substrate is centered on the mounting table.
2) Using the second transfer type articulated substrate transfer robot, the semiconductor substrate on the first positioning temporary table is transferred onto the second positioning temporary table in the grinding stage chamber. The semiconductor substrate is centered by the second positioning temporary table.
3) The semiconductor substrate on the second positioning temporary mounting table is placed on a loading / unloading stage chuck mounted on an index type turntable using a third articulated transfer robot, and then vacuum-adsorbed to the semiconductor substrate. The back surface of the material is fixed upward on the suction chuck.
4) The index type turntable is rotated 90 degrees counterclockwise, and the semiconductor substrate on the loading / unloading stage chuck is moved to the substrate edge grinding stage chuck position.
5) While rotating the substrate edge grinding stage chuck and moving the edge grinding wheel of the edge grinding apparatus to the front where the semiconductor substrate is located, the substrate is moved down by the rotating edge grinding wheel. Infeed edge grinding is performed to reduce the outer peripheral edge of the silicon substrate on the back surface of the semiconductor substrate on the edge grinding stage chuck to a desired thickness. Grinding fluid is supplied to the working point where the edge grinding wheel is in contact with the semiconductor substrate. When the thickness of the outer peripheral edge of the semiconductor substrate measured with a thickness measuring device reaches a desired thickness threshold, the edge grinding wheel is raised and moved away from the outer peripheral edge surface of the semiconductor substrate. Next, the edge grinding wheel is retracted and returned to the edge grinding start position.
6) The index type turntable is rotated 90 degrees counterclockwise to move the semiconductor substrate on the substrate edge grinding stage chuck to the substrate rough grinding stage chuck position.
7) The substrate rough grinding stage chuck is rotated, and then the cup wheel type rough grinding wheel is lowered while rotating, and the outer peripheral edge is in contact with the silicon substrate surface of the edge-ground semiconductor substrate, and infeed rough grinding is performed. . During in-feed rough grinding, a grinding fluid is supplied to a work point where the cup wheel type rough grinding wheel and the semiconductor substrate are in contact with each other. When the thickness of the semiconductor substrate measured with a thickness measuring instrument reaches a desired threshold value, the cup wheel type rough grinding wheel is raised and moved away from the semiconductor substrate surface.
8) The index type turntable is rotated 90 degrees counterclockwise to move the semiconductor substrate on the substrate rough grinding stage chuck to the substrate finishing grinding stage chuck position.
9) The substrate finish grinding stage chuck is rotated, and then the cup wheel type finish grinding wheel is lowered and rotated to perform infeed finish grinding while abutting against the silicon substrate surface of the roughly ground semiconductor substrate. During the in-feed finish grinding, a grinding liquid is supplied to a work point where the cup wheel type finish grinding wheel and the semiconductor substrate are in contact with each other. When the thickness of the semiconductor substrate measured with a thickness measuring instrument reaches a desired thickness threshold, the cup wheel type finish grinding wheel is raised and moved away from the semiconductor substrate surface.
10) The index type turntable is rotated 270 degrees clockwise or 90 degrees counterclockwise to move the semiconductor substrate on the substrate finish grinding stage chuck to the loading / unloading stage chuck upper position.
11) A semiconductor substrate subjected to edge grinding / rough grinding and finish grinding fixed on the loading / unloading stage chuck is transferred to a base substrate front / back surface cleaning device using a third articulated transfer robot. Then, the front and back surfaces of the semiconductor substrate are cleaned.
12) Use the third articulated transfer robot to transfer the semiconductor substrate on the substrate front and back surface cleaning device onto a temporary table surface plate in the polishing stage chamber, so that the silicon substrate surface of the semiconductor substrate The front and back are reversed so as to face, and then placed on the temporary table.
13) Return the transfer arm of the third articulated transfer robot to the standby position.
14) The third multi-joint is connected to the next semiconductor substrate on the substrate front / back surface cleaning apparatus that has been subjected to edge grinding, rough grinding, finish grinding, and double-sided cleaning during the steps 1) to 13). Use a mold transfer robot to transfer it to the temporary table in the polishing stage chamber, reverse the front and back so that the silicon substrate surface of the semiconductor substrate faces downward, and then open the temporary table Place it on the position.
15) The temporary mounting table on which the two semiconductor substrates are mounted is rotated 180 degrees. Next, a pair of substrate suction chucks provided below the index-type head is lowered from above the temporary table base, and the first and second semiconductor substrates are sucked. Raise a pair.
16) The main shaft of the index type head is rotated 90 degrees clockwise, and a pair of substrate suction chucks holding the two semiconductor substrates on the lower surface is moved to a position facing the first polishing surface plate.
17) While rotating the first polishing surface plate, the pair of substrate chucks are lowered while rotating, and the silicon base surfaces of the two semiconductor substrates are rubbed against the first polishing surface plate. Rough polishing is performed. During this rough polishing process, an abrasive solution is supplied to a polishing work point where the silicon substrate surface of the semiconductor substrate and the polishing cloth of the first polishing surface plate rub against each other. After roughly polishing the silicon substrate surface of the semiconductor substrate to a desired thickness reduction, the pair of substrate suction chucks are raised, and the rotation of the pair of suction chucks is stopped.
18) The main axis of the index-type head is rotated 90 degrees clockwise, and a pair of substrate suction chucks holding the two roughly polished semiconductor substrates on the lower surface is moved to a position facing the second polishing surface plate. And move.
19) While rotating the second polishing surface plate, lowering the pair of substrate suction chucks while rotating them, and sliding the silicon base surfaces of the two semiconductor substrates against the second polishing surface plate. Medium finish polishing. During this intermediate finish polishing, an abrasive solution is supplied to the polishing work point where the silicon substrate surface of the semiconductor substrate and the polishing cloth of the second polishing surface plate rub against each other. After the silicon substrate surface of the semiconductor substrate is subjected to intermediate finish polishing to a desired thickness reduction, the pair of substrate chucks are raised and the rotation of the pair of chucks is stopped.
20) A position where the pair of substrate chucks holding the two semi-finished semiconductor substrates on the lower surface is opposed to the third polishing surface plate by rotating the main shaft of the index type head 90 degrees clockwise. Move to.
21) While rotating the third polishing platen, the pair of substrate suction chucks are lowered while rotating, and the silicon base surfaces of the two semiconductor substrates are rubbed against the third polishing platen. Perform precision finish polishing. During this precision finish polishing, an abrasive solution is supplied to the polishing work point where the silicon substrate surface of the semiconductor substrate and the polishing cloth of the third polishing surface plate rub against each other. After precisely finishing polishing the silicon substrate surface of the semiconductor substrate to a desired thickness reduction, the rotation of the pair of suction chucks is stopped and the rotation of the third polishing surface plate is also stopped. Thereafter, the pair of substrate suction chucks are raised to leave two semiconductor substrates on the third polishing surface plate.
22) The main axis of the index-type head is rotated 90 degrees clockwise or counterclockwise 270 degrees, and a pair of substrate suction chucks holding the two finished polished semiconductor substrates on the lower surface is temporarily placed. The semiconductor substrate moves to a position facing the board, and the two semiconductor substrates sucked by the pair of substrate chucks are brought into contact with the surface of the temporary table base. Thereafter, the compressed air is blown from the pair of back surfaces of the substrate suction chuck to release the fixing of the semiconductor substrate from the substrate suction chuck, and then the supply of the pressurized air is stopped. After raising the pair, the two precision-finished and polished semiconductor substrates are left on the temporary table surface plate, and then the temporary table surface plate is rotated 180 degrees.
23) A semiconductor that has been subjected to precision finish polishing that is placed on the temporary table base in the polishing stage using the second transfer-type transfer articulated substrate transfer robot in the loading / unloading stage. The first semiconductor substrate on one side of the substrate is gripped, and then the precision-finished and polished first semiconductor substrate is transferred onto a substrate cleaning device, where the precision-finished and polished semiconductor substrate is subjected to spin cleaning. Do. During the spin cleaning, the second transfer-type transfer articulated substrate transfer robot returns to the standby position.
24) The cleaned first semiconductor substrate w on the substrate cleaning device is gripped by using the first transfer type transfer type transfer type articulated substrate transfer robot and transferred into the storage cassette at the load port position. Storing. During this time, the second precision finish polishing semiconductor substrate is gripped by the second transfer type transfer articulated substrate transfer robot, and then the precision finish polishing second semiconductor substrate is cleaned by the substrate cleaning. The semiconductor substrate that has been transferred to the equipment and precision-polished and polished is subjected to spin cleaning.
25) Grasp the second semiconductor substrate w cleaned on the substrate cleaning device using the first transfer type transfer type multi-joint type substrate transfer robot, and transfer it into the storage cassette at the load port position; Store.

  By reducing the edge thickness of the semiconductor substrate with an edge grinding wheel before performing the backside grinding process on the backside of the semiconductor substrate, the semiconductor substrate is cracked or edged in subsequent finish grinding, polishing, cleaning, and substrate transport processes. Opportunities for chipping are extremely rare.

  Also, the chambers for installing the planarizing device are the front L-shaped semiconductor substrate loading / unloading stage chamber, the intermediate semiconductor substrate polishing stage chamber, and the back semiconductor substrate grinding stage chamber 3. The chamber is divided by a partition wall, and attached to a flattened semiconductor substrate by installing a substrate cleaning device in the loading / unloading stage chamber and a substrate front / back surface cleaning device in the semiconductor substrate grinding stage chamber The number of foreign matters having a particle diameter of less than 1 μm can be as clean as 100 or less.

  Since polishing is performed by rubbing the semiconductor substrate against the polishing cloth of the polishing surface plate having a diameter larger than the diameter of the semiconductor substrate, the polishing processing speed can be increased and the polishing cloth of the polishing surface plate can be extended over the entire surface of the semiconductor substrate. Since the pressure distribution over which the surface pressure is applied becomes substantially constant, a flattened semiconductor substrate having a uniform film thickness distribution can be obtained. When the semiconductor substrate is a copper electrode penetrating silicon substrate, it is possible to obtain a TSV wafer in which the head of the copper electrode having a height of 1 to 20 μm protrudes from the silicon substrate surface depending on the polishing allowance.

  The polishing process of the semiconductor substrate is a rate-determining process that requires about twice the time of the grinding process. Therefore, a CMP polishing apparatus equipped with a pair of substrate suction chucks that can polish two substrates at the same time is adopted. It was made possible to simultaneously polish the obtained two grinding substrates.

FIG. 1 is a plan view of a semiconductor substrate planarization apparatus. FIG. 2 is a flowchart showing an edge grinding process of a semiconductor substrate. FIG. 3 is a cross-sectional view showing a state where two semiconductor substrates are being polished by a third polishing surface plate. It is a top view of a surface grinding apparatus. (Known)

Hereinafter, the present invention will be described in more detail with reference to the drawings.
A chamber 11 of the semiconductor substrate back surface flattening apparatus 1 shown in FIG. 1 has an alphabetic alphabet display L-shaped semiconductor substrate loading / unloading stage chamber 11a from the front portion, and an intermediate semiconductor substrate polishing stage chamber 11c. And it is divided into three chambers of the grinding stage chamber 11b of the semiconductor substrate at the back by a partition wall. The partition wall between the stage chambers is provided with an opening through which a substrate leading to an adjacent stage chamber (11a, 11c or 11c, 11b) can be taken in and out of the front wall of the loading / unloading stage chamber 11a. A plurality of substrate storage cassettes 13, 13, and 13 are installed, and a load port portion having an opening is provided at a portion of the front wall of the chamber that is in contact with the back of the substrate storage cassette, and the load port portion can be opened and closed. A door is provided. In order to see the status of the appliances in each chamber 11a, 11b, 11c, each chamber is provided with a semi-rotating transparent window 11d, 11d, 11d, 11d, 11d, 11d, 11d. In FIG. 1, the rotation trajectory is indicated by a virtual arc.

During planarization of the semiconductor substrate, the chamber pressure in the polishing stage chamber 11c is set higher than the chamber pressure in the grinding stage chamber 11b.

  In the semiconductor substrate loading / unloading stage chamber 11a, a first transfer type articulated substrate transfer robot 14 is provided on a base 12 in a chamber behind the load port, and a substrate cleaning device 3 is provided on the left side thereof. A first positioning temporary placement table 15 is provided above the substrate cleaning device, and a second transfer multi-joint type substrate transfer robot 16 is provided at the back rear of the first positioning temporary placement table.

  The first transfer type articulated substrate transfer robot 14 is movable in the left-right direction (X-axis direction) along the guide rail 14a, and holds the semiconductor substrate in the substrate storage cassette 13 by the robot hand 14b. The semiconductor substrate on the substrate cleaning device 3 is gripped by the robot hand 14b and transferred to and stored in the substrate storage cassette 13 (unloading). The second transfer type articulated substrate transfer robot 16 can be transferred in the front-rear direction (Y-axis direction) by a ball screw drive 16a.

  The first temporary positioning table 4 is a positioning device that performs centering (centering position adjustment) of the semiconductor substrate.

  The substrate cleaning device 3 is a spin-type substrate cleaning device for cleaning a polished silicon substrate surface of a semiconductor substrate. Pure water is supplied from one cleaning liquid supply nozzle 3a, and chemical cleaning liquid is supplied from the other cleaning liquid supply nozzle 3b. Is supplied onto the silicon substrate surface. The cleaning liquid supply nozzles 3a and 3b can swing.

  As pure water, distilled water, deep seawater, deionized water, surfactant-containing pure water, or the like is used. Examples of the chemical cleaning liquid include hydrogen peroxide water, ozone water, hydrofluoric acid aqueous solution, SC1 liquid, SC1 liquid and ozone water mixed liquid, hydrogen fluoride liquid, hydrogen peroxide water and water-soluble amine compound liquid, etc. Alternatively, those in which any one of a water-soluble anion, nonion, and betaine surfactant is blended are used.

  As the substrate cleaning device 3, a chemical cleaning device described in Japanese Patent Application No. 2008-183398 (Patent Document 6) may be used. The chemical cleaning device 3 includes a spin chuck in a cleaning tank. The spin chuck places a semiconductor substrate w and rotates it in the horizontal direction. The spin chuck is supported by a hollow rotary shaft, a pure water supply pipe is provided in the hollow rotary shaft, and pure water is used to clean the surface of the protective tape. A decompression fluid passage is provided between the inside of the hollow rotary shaft and the outside of the pure water supply pipe. Above the spin chuck, an alkali cleaning liquid supply nozzle 3b is provided on a support rod that is erected by a rotary drive mechanism so as to rotate by a pendulum on a track passing through the spin chuck center point by an arm, and the acid cleaning liquid supply nozzle 3b. Is provided on a support rod that stands up from a rotary drive mechanism so that the pendulum rotates on an orbit passing through the center point of the spin chuck by the arm. Further, the rinse liquid supply nozzle is provided at an angle at which the rinse liquid reaches the spin chuck center point from above the base.

As the alkaline cleaning liquid, ammonia water (SC1), trimethylammonium water, or the like is used, and is used to remove foreign substances adhering to the silicon substrate surface. As the acid cleaning solution, ozone-dissolved water, hydrogen peroxide water, hydrofluoric acid aqueous solution, hydrofluoric acid / hydrogen peroxide / isopropanol mixed aqueous solution, hydrogen peroxide / hydrochloric acid / pure water mixed solution (SC2), etc. are used. It serves to return the oxidized silicon substrate surface (S _i O ₂ ) to silicon (S _i ).

  As the rinsing liquid, pure water such as deionized exchange water, distilled water, and deep seawater is used. The rinsing liquid serves to wash off alkali and acid so that they do not remain on the semiconductor substrate surface. The silicon substrate surface of the semiconductor substrate is cleaned first by alkali cleaning, second by acid cleaning, and third by rinsing cleaning. If necessary, a rinse wash may be added between the first alkaline wash and the second acid wash.

When the thickness of the silicon base surface of the single-layer semiconductor substrate is reduced by 720 to 770 μm and the thickness of the silicon base surface is 20 to 80 μm using a planarizing device, the printed wiring surface of the semiconductor substrate is made of an ultraviolet curable acrylic resin. Protect the printed circuit board surface of the semiconductor substrate with wax or heat-decomposable foamed adhesive on a template such as glass disk, polycarbonate disk, polymethylmethacrylate disk, polyetheresterketone (PEEK) disk, etc. Pasted and stored in the storage cassette 13. Since TSV wafers and SOI wafers have sufficient thickness and high rigidity, it is not necessary to use the protective tape or the protective disk.

The second transfer type articulated substrate transfer robot 16 holds the semiconductor substrate centered on the first positioning temporary table 4 with an arm 16b and is installed in the grinding stage chamber 11b. The semiconductor substrate is transferred onto the temporary positioning table 5. Further, the semiconductor substrate on the substrate front / back surface cleaning device 6 in the grinding stage chamber 11b is held by the arm 16b, and onto the temporary table 70a1 in front of the circular temporary table base 70a in the polishing stage chamber 11c. Transport. A virtual circle 16c indicates the maximum area in which the arm 16b of the second transfer type articulated substrate transfer robot can move.

The grinding work of the semiconductor substrate in the grinding stage 20 is longer than the loading / unloading work time of the semiconductor substrate. In the semiconductor substrate grinding stage 11b of the semiconductor substrate, the second temporary positioning table 5 is provided on the back side of the second transfer type articulated substrate transfer robot 16, and the second temporary positioning substrate 5 is provided. A third articulated transfer robot 17 of a hand arm front / back rotation type is provided on the right side of the mounting table, and the substrate front / back surface cleaning device 6 is provided on the side of the third articulated transfer robot, and the substrate front / back surface cleaning is performed. Provided on the right side of the apparatus is a substrate chuck surface plate in which four pairs of substrate chuck tables 30a, 30b, 30c, 30d are provided on one index type turntable 2 so as to be rotatable at equal intervals on the same circumference. Loading / unloading stage chuck 30a, substrate edge grinding stage chuck 30b, substrate rough grinding stage If it is the position of the jack 30c and substrate finish grinding chuck 30d numerical control device is stored as an index located. The third articulated transfer robot 17 transfers the semiconductor substrate on the second temporary positioning table 5 onto the loading / unloading stage chuck 30a, and transfers the semiconductor substrate on the loading / unloading stage chuck 30a. It has a function of transferring to the substrate front / back surface cleaning device 6 and transferring the semiconductor substrate on the substrate front / back surface cleaning device 6 onto the temporary table base plates PS1f and PS1b in the polishing stage chamber 11c.

The index-type turntable 2 is supported by a rotating shaft, and the rotating shaft is rotated 90 degrees in a counterclockwise direction by a rotation driving device (not shown), or a service pipe such as an electric wire, a coolant, or air is twisted. In order to prevent breakage, it is rotated 270 degrees in the clockwise direction once every four rotations. Due to the rotation of the index type turntable 2, the four pairs of substrate chuck tables 30a, 30b, 30c, 30d are stored in the numerical control memory as different positions of the substrate chuck tables 30b, 30c, 30d, 30a. The

Above the loading / unloading stage chuck 30a, a chuck cleaning device 8 disclosed in US Pat. No. 7,238,087 (Patent Document 3) is provided. The chuck cleaning device 8 includes a brush, a rotary chuck cleaner grindstone, and a pure water supply nozzle. Grinding that adheres to the surface of the rotating loading / unloading stage chuck 30a while the rotating brush is lowered and brought into contact with and rubbed while supplying pure water from the pure water supply nozzle. After removing residues and abrasive particles, the brush is raised, then the rotating rotary chuck cleaner grindstone is lowered and brought into contact with and rubbed against the surface of the chuck 30a. The grinding residue stuck in the porous ceramic chuck 30a with water is removed. Further, pressurized water is ejected from the back surface of the porous ceramic chuck 30a, and the grinding residue stuck into the porous ceramic chuck 30a is ejected from the porous ceramic chuck 30a to be completely removed.

The edge grinding wheel 9a is moved on the base 12 beside the substrate edge grinding stage chuck 30b, the slider 9d is moved forward and backward by the motor 9e on the guide rail 9c, and the grinding wheel shaft that supports the edge grinding wheel 9a is fixed. An edge grinding device 9 is provided that allows the plate to move up and down on the guide plate 9f rail by driving a motor 9g.

In order to edge-grind the outer peripheral edge of the silicon substrate of the semiconductor substrate w using the edge grinding apparatus 9, as shown in FIG. 2, the silicon substrate outside the silicon substrate w on the rotating substrate edge grinding stage chuck 30b is removed. The diamond cup wheel-type edge grinding wheel 9a rotating upward at the periphery is moved forward (FIG. 2a), and then the diamond cup wheel-type edge grinding wheel 9a is lowered to move the silicon substrate outer periphery 0.5 to When the edge grinding wheel 9a is brought into contact with and rubbed within 3 mm, and the infeed grinding is performed (FIG. 2b) and the desired thickness is reduced (FIG. 2c), the diamond cup wheel type edge grinding wheel 9a is raised and moved away from the surface of the semiconductor substrate w (FIG. 2d).

A grinding fluid is supplied from a grinding fluid supply nozzle (not shown) to the grinding point where the diamond cup wheel type rough grinding wheel 90a contacts the outer periphery of the silicon substrate of the semiconductor substrate. As such a grinding liquid, pure water, ceria particle aqueous dispersion, fumed silica aqueous dispersion, colloidal silica aqueous dispersion, or tetramethylammonium, ethanolamine, caustic potash, imidazolium salt, etc. are blended in these grinding liquids. Can be used.

Above the substrate rough grinding stage chuck 30c, a fixed plate 90c having a grinding wheel shaft 90b for bearing a diamond cup wheel type rough grinding wheel 90a having a grinding number of 300 to 2,000 is fixed on the front surface of the column. The rough grinding means 90 which can be moved up and down on the guide rail 90f by driving is provided. Rotation driving devices such as a motor, a pulley, and a transmission belt, which are rotation driving devices for the grinding wheel shaft 90b, are not shown in the figure because they are provided in the column. Rotational speed of the substrate chuck 8~300rpm ^{(min -1),} the rotational speed of the cup wheel type grinding wheel 1,000~4,000min ^-1, grinding fluid supply to the silicon base surface is 100～2,000Cc / Minutes.

Above the substrate finishing grinding stage chuck 30d is a sliding plate 91d having a fixed plate 91c fixed to a front surface of the column with a grinding wheel shaft 91b fixed to a diamond cup wheel type finishing grinding wheel 91a having a grinding number of 2,500 to 30,000. A finish grinding means 91 is provided which can be moved up and down on the guide rail 91f by driving the motor 91e. Rotation drive devices such as a motor, a pulley, and a transmission belt, which are rotation drive devices for the grindstone shaft 91b, are not shown in the figure because they are provided in the column. Rotational speed of the substrate chuck 5~80rpm ^{(min -1),} the rotational speed of the cup wheel type grinding wheel 400~3,000min ^-1, grinding fluid supply to the silicon base surface in 100～2,000Cc / min is there.

  The grinding allowance (730 to 750 μm thickness) of the silicon base surface having a thickness of about 750 to 770 μm at the grinding stage 20 is removed by the rough grinding stage of the semiconductor substrate, and the thickness of 10 to 40 μm is removed by the finish grinding stage.

Two-point thickness indicators 89 and 89 for measuring the thickness of the semiconductor substrate are provided on the base 12 next to the substrate rough grinding stage chuck 30c and the substrate finishing grinding chuck 30d. This thickness measuring instrument for measuring the thickness of a semiconductor substrate is a sensor head holder provided with a fluid passage capable of supplying gas to the outer periphery of a sensor head provided with a laser beam projector and a light receiver disclosed in JP 2009-88073 A A non-contact thickness measuring instrument including a control unit and data analysis means may be used.

As a thickness measuring device using the reflectance of such commercially available laser light, near infrared light (wavelength 1.3 μm) is irradiated to one side of a silicon substrate on a measurement stage with a laser beam spot diameter of 1.2 to 250 μmφ, As a silicon substrate thickness measuring device that detects the reflected light with a light receiver and calculates the thickness of the silicon substrate, the product name is LTM1001 from Presize Gauge Co., Ltd. and the product name is Thickness Measurement Device C8125 from Photogenic Co. Available from FRONTIER SEMICONDUCTOR, USA under the trade name FSM413-300. In addition, as a non-contact optical thickness measuring instrument using reflectance spectroscopy using near infrared light having a wavelength of 650 nm to 1,700 nm with a beam spot diameter of 100 to 1,000 μmψ, non-contact optical from FILMETRICS, INC. It can be obtained from Otsuka Electronics Co., Ltd. under the trade name MCPD5000. White light (420 to 720 nm wavelength) is used as the spectral wavelength for measuring the thickness of the printed wiring board surface of the semiconductor substrate, and 650 nm or 1.3 μm wavelength is used as the spectral wavelength for measuring the thickness of the silicon substrate. .

The hand arm front / back rotation type third articulated transfer robot 7 grips the semiconductor substrate on the loading / unloading stage chuck 30a with the hand arm 7a and transfers it onto the substrate front / back surface cleaning device 6.

The substrate front and back surface cleaning device 6 includes, for example, a pair of brushes 6a and 6a for cleaning the outer peripheral edges of the semiconductor substrate front and back surfaces, and cleaning liquid supply nozzles 6b and 6c for supplying a cleaning liquid to the semiconductor substrate front and back surfaces. The cleaning of the front and back surfaces of the semiconductor substrate is performed by transferring the semiconductor substrate onto the disk-shaped porous ceramic suction chuck 6d of the substrate front and back surface cleaning device 6, and then supplying a cleaning liquid to the front and back surfaces of the mounted semiconductor substrate. Brush scrub cleaning while spinning the porous ceramic suction chuck 6d, and then holding the outer peripheral edge of the semiconductor substrate with six pairs of fixed claws and raising the ring that supports the six fixed claws at equal intervals. The semiconductor substrate is moved away from the upper surface of the disk-shaped porous ceramic suction chuck 6d, and the cleaning liquid is supplied to the front and back surfaces of the semiconductor substrate from the cleaning liquid supply nozzles 6b and 6c.

  As the rough grinding liquid, finish grinding liquid, and cleaning liquid, pure water is generally used, but since the semiconductor substrate is subjected to a polishing process or a cleaning process in a later process, the pure water contains an alkali or a water-soluble amine compound. You may do it.

  The semiconductor substrate whose front and back surfaces on the substrate front and back surface cleaning device 6 have been cleaned is held by the arm 17a of the third transfer type articulated substrate transfer robot 17, and the circular temporary substrate in the polishing stage chamber 11c. It is transferred onto the temporary table PS1f, PS1b of the table base plate PS1.

  The polishing process of the semiconductor substrate in the polishing stage chamber 11c takes about twice as long as the grinding process in the grinding stage 20. Therefore, the polishing stage 70 is configured so that two semiconductor substrates can be simultaneously polished.

In the polishing stage chamber 11c, a temporary mounting table PS1 having four circular temporary mounting tables on which the four substrates can be mounted are provided on the same circumference and at equal intervals, and two substrates are mounted. The first, second and third polishing surface plates of the planar circular polishing surface plate to be polished are the same center point of the four surface plates PS1, PS2, PS3 and PS4. Polishing means installed on the circumference and rotatably at equal intervals, and three dressers 76 for dressing the polishing cloth of the polishing surface plate beside each of the three polishing surface plates PS2, PS3, PS4, 76, 76 are provided, and one index type head 71 is provided above the four surface plates PS1, PS2, PS3, PS4, and the surface of the substrate to be polished is below the index type head. Substrate suction that sucks downward Polishing provided with substrate chuck means capable of adsorbing and fixing eight substrates concentrically provided with four units of a substrate adsorption chuck mechanism in which a pair of chucks 70a and 70b are simultaneously and independently supported by a main shaft so as to freely rotate. The machining stage 70 is configured.

As shown in FIG. 3, the pair of substrate suction chucks 70a, 70b is rotated by 90 degrees of the rotation shaft 71s of the index type head 71, so that each of the substrate suction chucks 70a, 70b has the four surface plates PS1, PS2. , PS3, PS4 can be faced in correspondence.

Further, the spindle shafts 70s and 70s of the pair 70a and 70b of the substrate suction chuck can be independently rotated by driving motors 70m and 70m, and support for supporting the fixing plates of both the substrate suction chucks 70a and 70b. An upper part of the plate 70e is suspended by a shaft 78, a fixed screw moving table having a ball screw screwed to the back surface of the sliding plate 78a for fixing the shaft 78 is provided, and the rotational drive of the servo motor 78m is transmitted to the ball screw to thereby guide the guide rail 78b. It is possible to slide up and down. This vertical movement causes the pair of substrate suction chucks 70a and 70b to move up and down.

The rotating shafts 79 of the four surface plates PS1, PS2, PS3, PS4 are rotated by a servo motor 79m.

  The rotating shaft 79 rotates on the silicon substrate surfaces of the two (first and second) semiconductor substrates w and w adsorbed by the pair of substrate adsorbing chucks 70a and 70b on which the spindle shafts 70s and 70s are rotated. It is abutted and rubbed against the surface of the polishing surface plate polishing cloth PS, and is polished.

When polishing the semiconductor substrate, a water-based abrasive is supplied from supply nozzles 72 to a processing point where the semiconductor substrate w, w and the polishing surface polishing pad PS are rubbed. Examples of such aqueous abrasives include pure water, ceria particle aqueous dispersion, fumed silica aqueous dispersion, colloidal silica aqueous dispersion, or these grinding liquids such as tetramethylammonium hydroxide, ethanolamine, caustic potash, imidazolium salt, etc. And a base, a surfactant, a chelating agent, a pH adjuster, an oxidizing agent, and a preservative can be used. The water-based abrasive is supplied to the polishing cloth (polishing pad) surface at a rate of 50 to 2,500 cc / min.

A foamed polyurethane laminate sheet as a polishing cloth for polishing surface plates PS2, PS3, PS4, and a non-woven fabric coated with a coating agent composed of a urethane prepolymer and a curing agent compound having an active hydrogen group, impregnated, and heated and foamed. Those are preferred. For the polishing cloth, purchase a polyurethane laminated sheet pad from Nitta Haas Co., Ltd. and Toyobo Co., Ltd., purchase a polyester fiber non-woven pad from Toray Cortex Co., Ltd. and Mitsui Chemicals, and a ceria-containing polyurethane pad from Toyobo Co., Ltd. it can. As the polishing cloth for cueing the electrode of the TSV wafer, a soft polyurethane foam pad having a JIS-A hardness of 60 to 85 is preferable.

Although not disclosed in FIG. 1, the non-contact type thickness measuring instrument disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 2009-88073 is used as a thickness measuring instrument for measuring the thickness of a polished semiconductor substrate. preferable.

The number of rotations of the pair of substrate suction chucks 70a and 70b on which the spindle shafts 70s and 70s are rotated is 5 to 100 min ⁻¹ on the polishing surface plates PS2 and PS3 and 2 to 2 on the polishing surface plate PS4. 55 min ⁻¹ . Rotational speed of the polishing platen PS2, PS3 is, 5~100min ^-1, rotational speed of the polishing platen PS4 is, 2~55min ^-1 are preferred. The pressure applied to the semiconductor substrate by the polishing platen is 50 to 300 g / cm ² , preferably 80 to 250 g / cm ² . The polishing conditions for rough polishing and intermediate finish polishing, and the type of aqueous abrasive may be the same or different.

  85 to 95% of the polishing allowance (5 to 20 μm thickness) of the semiconductor substrate at the polishing stage 70 is removed by the rough polishing stage and the intermediate finish polishing stage of the semiconductor substrate, and 0.1 to 2 μm by the final polishing process. Remove the thickness. By using an abrasive slurry containing ceria particles or silica particles as an aqueous abrasive, the silicon substrate surface is polished in preference to the metal electrode, so that the electrode head with a height of 1 to 20 μm protrudes from the silicon substrate surface. A TSV substrate is obtained.

When a polishing cloth with uniform surface properties is used, the electrode head protrusion height of the TSV wafer obtained is a protrusion height of 90 to 95% of the amount of polishing removal at the location where the electrode is present in isolation, Where the electrodes are densely present, the protrusion height is 55 to 60% of the polishing allowance. Therefore, if the JIS-A hardness of the polishing cloth that polishes the places where the electrodes are densely present is made lower than the JIS-A hardness of the polishing cloth that polishes the places where the electrodes exist in isolation, both patterns It is expected that a TSV wafer with a more approximate electrode protrusion height will be obtained.

  Using the substrate planarization processing apparatus 1 shown in FIG. 1, the operation of thinning and planarizing the silicon substrate surface on the back surface of the semiconductor substrate or the through electrode silicon substrate surface on the back surface of the TSV substrate is performed through the following steps. The work time in parentheses indicates the work time for processing a 300 mm diameter and 450 mm diameter semiconductor substrate, although it depends on the diameter of the semiconductor substrate and the silicon substrate removal allowance (thickness) to be thinned.

  1) The semiconductor substrate w stored in the substrate storage cassette 13 is transported and moved into the loading / unloading stage chamber 11a using the first transfer type articulated substrate transport robot 14, and is further placed on the positioning temporary table 4 The semiconductor substrate is centered on the temporary positioning table. (3-8 seconds)

2) The semiconductor substrate on the first positioning temporary table 5 is transferred onto the second positioning temporary table 5 in the grinding stage chamber 11b by using the second transfer type articulated substrate transfer robot 16. The semiconductor substrate is centered by the second positioning temporary table. (3-8 seconds)

3) The semiconductor substrate on the second temporary positioning table 5 is placed on the loading / unloading stage chuck 30a mounted on the index type turntable 2 by using the third articulated transfer robot 17, and then the chuck 30a. The pressure is reduced and the back surface (silicon substrate surface) of the semiconductor substrate is fixed upward on the suction chuck 30a. (3-8 seconds)

4) The index-type turntable 2 is rotated 90 degrees counterclockwise, and the semiconductor substrate on the loading / unloading stage chuck 30a is moved to the substrate edge grinding stage chuck 30b position. (0.5-2 seconds)

5) The semiconductor substrate while rotating the substrate edge grinding stage chuck 30b at a rotation speed of 50 to 300 min ⁻¹ and rotating the edge grinding wheel 9a of the edge grinding apparatus at a rotation speed of 1,000 to 8,000 min ^−1. Next, the rotating edge grinding wheel 9a is lowered, and a desired thickness (700 to 1, 1) of the outer periphery of the silicon substrate on the back surface of the semiconductor substrate on the substrate edge grinding stage chuck 30b is lowered. 000 μm) to reduce infeed edge grinding. Grinding fluid is supplied to the working point where the edge grinding wheel 9a contacts the semiconductor substrate w. When the thickness of the outer peripheral edge of the semiconductor substrate measured by a thickness measuring device (not shown) reaches a desired thickness threshold, the edge grinding wheel 9a is raised to move away from the outer peripheral edge surface of the semiconductor substrate. . Next, the edge grinding wheel 9a is retracted and returned to the edge grinding start position. (3-10 seconds)

6) The index type turntable 2 is rotated 90 degrees counterclockwise to move the semiconductor substrate on the substrate edge grinding stage chuck 30b to the substrate rough grinding stage chuck 30c position. (0.5-2 seconds)

7) The substrate rough grinding stage chuck 30c is rotated at a rotational speed of 8～300Min ^-1, then it is lowered while rotating the cup wheel type rough grinding 90a at a rotational speed of 1,000～4,000Min ^-1 Infeed rough grinding is performed while the outer peripheral edge is abutted and rubbed against the silicon substrate surface of the semiconductor substrate subjected to edge grinding. The thickness to be reduced is, for example, 730 μm. During the in-feed rough grinding, the grinding liquid is supplied at a rate of 100 to 2,000 cc / min to the work point where the cup wheel type rough grinding wheel 90a and the semiconductor substrate w come into contact. When the thickness of the semiconductor substrate measured by the thickness measuring device 89 reaches a desired threshold value, the cup wheel type rough grinding wheel 90a is raised and moved away from the silicon substrate surface of the semiconductor substrate. (2.5-5 minutes)

8) The index-type turntable 2 is rotated 90 degrees counterclockwise to move the semiconductor substrate on the substrate rough grinding stage chuck 30c to the substrate finishing grinding stage chuck 30d position. (0.5-2 seconds)

9) The substrate finish grinding stage chuck 30d is rotated at a rotational speed of 8 to 300 min ⁻¹ , and then the cup wheel type finish grinding wheel 91a is lowered while rotating at a rotational speed of 400 to 3,000 min ⁻¹ to perform rough grinding. Infeed finish grinding is performed while contacting the silicon substrate surface of the semiconductor substrate. The thickness to be reduced is, for example, 20 μm. During the in-feed finish grinding, a grinding liquid is supplied to a work point where the cup wheel type finish grinding wheel and the semiconductor substrate are in contact with each other. When the thickness of the semiconductor substrate measured by the thickness measuring device 89 reaches a desired threshold value, the cup wheel type finish grinding wheel 91a is raised and moved away from the silicon substrate surface of the semiconductor substrate. (2-4 minutes)

10) The index type turntable 2 is rotated 270 degrees clockwise or 90 degrees counterclockwise, and the semiconductor substrate on the substrate finishing grinding stage chuck 30d is moved to a position above the loading / unloading stage chuck 30a. Let (0.5-2 seconds)

11) A substrate front and back surface cleaning device using a third articulated transfer robot 17 for a semiconductor substrate subjected to edge grinding / rough grinding and finish grinding fixed on the loading / unloading stage chuck 30a. 6 and the front surface and the back surface of the semiconductor substrate are cleaned at that location. (5-15 seconds)

12) The semiconductor substrate w on the substrate front and back surface cleaning device 6 is transferred onto the temporary table base plate PS1 in the polishing stage chamber 11c by using the third articulated transfer robot 17, and the silicon of the semiconductor substrate is transferred. The substrate surface is reversed so that the base surface faces downward, and then placed on the temporary table base plate PS1f. (1-2 seconds)

13) Return the transfer arm of the third articulated transfer robot to the standby position. (0.5 to 1 second)

14) Edge cleaning, rough grinding, finish grinding, double-sided cleaning of the second semiconductor substrate newly transferred during the above steps 1) to 13), and the substrate front and back surface cleaning device The semiconductor substrate w on the semiconductor substrate 6 is transferred onto the temporary table PS1 in the polishing stage chamber 11c by using the third articulated transfer robot 17, so that the silicon substrate surface of the semiconductor substrate faces downward. And then placed on the temporary table PS1b. (2-4 seconds)

15) The rotary shaft 79 of the temporary table base plate PS1 on which the two semiconductor substrates w and w are placed is rotated 180 degrees. Next, a pair of substrate suction chucks 70a, 70b provided below the index type head 71 is lowered from above the temporary table base plate PS1, and the two first and second semiconductor substrates w, w are vacuum suctioned. Then, the pair of substrate suction chucks 70a and 70b is raised. (2-4 seconds)

16) The main shaft of the index-type head is rotated 90 degrees clockwise, and the pair of substrate suction chucks holding the two semiconductor substrates on the lower surface is moved to a position facing the first polishing surface plate PS2. (1 to 2.5 seconds)

17) while the first polishing platen PS2 is rotated at a rotational speed of 5~100min ^-1, 1 pair 70a of the substrate suction chuck, 70b and is lowered while rotating at a rotational speed of 5~100min ^-1, wherein Rough polishing is performed by rubbing the silicon substrate surfaces of the two semiconductor substrates w and w against the polishing cloth of the first polishing surface plate PS2. During this rough polishing process, a polishing liquid is supplied from polishing liquid supply nozzles 72 and 72 to a polishing work point where the silicon substrate surface of the semiconductor substrate and the polishing cloth of the first polishing surface plate rub. After roughly polishing the silicon substrate surface of the semiconductor substrate to a desired thickness reduction (for example, 10 μm), the pair of substrate chucks is raised, and the rotation of the chuck chucks 70a and 70b is stopped. (5-10 minutes)

18) The pair of substrate suction chucks 70a and 70b for holding the two rough-polished semiconductor substrates w and w on the lower surface are rotated by rotating the main shaft 71s of the index-type head 90 degrees clockwise. Move to a position facing the surface plate PS3. (1 to 2.5 seconds)

19) while rotating at a rotational speed of the second polishing platen PS3 5~100min ^-1, 1 pair 70a of the substrate suction chuck, 70b and is lowered while rotating at a rotational speed of 5~100min ^-1, wherein A semi-finished polishing process is performed by rubbing the silicon substrate surfaces of the two semiconductor substrates w and w against the polishing cloth of the second polishing surface plate PS3. During this intermediate finish polishing, the polishing liquid is supplied from the polishing liquid supply nozzles 72 and 72 to the polishing work point where the silicon substrate surface of the semiconductor substrate and the polishing cloth of the second polishing surface plate rub against each other. After the silicon substrate surface of the semiconductor substrate is subjected to intermediate finish polishing to a desired thickness reduction (for example, 5 μm), the pair of substrate suction chucks are raised, and the rotation of the pair of suction chucks is stopped. (5-10 minutes)

20) A pair of substrate suction chucks 70a and 70b for holding the two semi-finished polished semiconductor substrates w and w on the lower surface by rotating the main spindle 71s of the index type head 90 degrees clockwise. It moves to a position facing the polishing surface plate PS4. (1 to 2.5 seconds)

21) while rotating at a rotational speed of the third polishing platen PS4 2~55min ^-1, 1 pair 70a of the substrate suction chuck, 70b and is lowered while rotating at a rotational speed of 2~55min ^-1, wherein Precision finishing polishing is performed by rubbing the silicon base surfaces of the two semiconductor substrates against the polishing cloth of the third polishing surface plate PS4. During this precision finish polishing, the polishing liquid is supplied from the polishing liquid supply nozzles 72 and 72 to the polishing work point where the silicon substrate surface of the semiconductor substrate and the polishing cloth of the third polishing surface plate rub against each other. After the silicon substrate surface of the semiconductor substrate is precisely finished and polished to a desired thickness reduction (for example, 1 to 2 μm), the rotation of the pair of substrate suction chucks 70a and 70b is stopped, and the third polishing surface plate PS4 Also stops rotating. (2-8 minutes)

22) A pair of substrate suction chucks for holding the two final polished semiconductor substrates w and w on the lower surface by rotating the spindle 71s of the index type head by 270 degrees in the clockwise direction or in the counterclockwise direction by 90 degrees. 70a and 70b are moved to a position facing the temporary table base plate PS1, and the two semiconductor substrates adsorbed by the pair of substrate adsorption chucks 70a and 70b are brought into contact with the surface of the temporary table base plate PS1. Thereafter, the compressed air is blown from the back surface of the pair of substrate suction chucks 70a and 70b for 0.5 to 1 second to release the fixing of the semiconductor substrate from the substrate suction chuck, and then the supply of pressurized air is stopped. After that, by raising the pair of substrate suction chucks 70a and 70b, two precision-finished and polished semiconductor substrates remain on the temporary table base plate PS1, and then the temporary table base plate PS1 is mounted. Rotate 180 degrees. (2-4 seconds)

23) The precision mounted on the temporary table base plate PS1 in the polishing stage chamber 11c using the second transfer type transfer articulated substrate transfer robot 16 in the loading / unloading stage chamber 11a. A semiconductor substrate that has been subjected to finish polishing and grips the first semiconductor substrate w located on the front side PS1f of the second transfer-type transfer articulated substrate transfer robot 16 and then this precision finish polishing processing was performed. The first semiconductor substrate is transferred onto the substrate cleaning device 3 where the semiconductor substrate that has been subjected to precision finish polishing is spin-cleaned. (0.5-2 minutes)

24) The cleaned first semiconductor substrate w on the substrate cleaning device 5 is gripped by using the first transfer type articulated substrate transfer robot 14, transferred to the storage cassette 13 at the load port position, and stored. To do. During this period, the second precision finish polishing semiconductor substrate w on the temporary table base plate PS1b is held by the second transfer type transfer articulated substrate transfer robot 16, and then this precision finish polishing process is performed. The second semiconductor substrate w is transferred onto the substrate cleaning device 5 where the semiconductor substrate that has been subjected to precision finish polishing is spin-cleaned. (0.5-2 minutes)

25) The second semiconductor substrate w cleaned on the substrate cleaning device 5 is gripped by using the first transfer-type transfer-type transfer articulated substrate transfer robot 14 and placed in the storage cassette 13 at the load port position. Transport and store. (1-3 seconds)

  While the steps 1) to 25) are being performed, the mechanical elements in each substrate loading / substrate unloading stage chamber 11a, grinding stage chamber 11b, and polishing stage chamber are the same as those described above. Loading stage work, grinding stage work and polishing stage work.

  Accordingly, the throughput of planar planarization of two semiconductor substrates having a reduced thickness of 740 μm on the backside silicon substrate and a reduced polishing process of 10 μm on the backside of the semiconductor substrate on which the wiring is printed on the surface of the silicon substrate having a diameter of 300 mm and a thickness of 770 μm. Since the maximum time is about 5 minutes, a maximum of about 24 planarized semiconductor substrates can be obtained in one hour. Also, the throughput of the planar flattening processing of a pair of semiconductor substrates with a reduced thickness of 730 μm on the backside silicon substrate and a reduced polishing process of 10 μm on the backside of the semiconductor substrate on which the wiring print is made on the surface of the silicon substrate with a diameter of 450 mm and a thickness of 770 μm Since the maximum time is about 11 minutes, about 12 planarized semiconductor substrates can be obtained in one hour.

  Furthermore, since the throughput time of the planarization processing of a pair of copper electrode head protrusions of a TSV wafer in which two 300 mm diameter and 775 μm thick through electrode wafers are laminated is about 10 minutes, 12 copper electrode head protrusion TSV wafers per hour Can be obtained.

Example 1
Using the substrate flattening apparatus shown in FIG. 1, a through silicon via copper electrode (TSV wafer, thickness 1,550 μm) of a TSV wafer in which two through electrode wafers having a diameter of 300 mm and a thickness of 775 μm are stacked under the following processing conditions. The copper electrode head protrusion was flattened. Table 1 shows the copper electrode head protrusion height distribution (unit: μm) in the isolated electrode portion and the dense electrode portion of the obtained TSV wafer. No chipping or cracking of the TSV wafer was observed during the copper electrode head protrusion flattening of the 26 TSV wafers.

Processing conditions:
Edge grinding allowance: 2mm width, 800μm thickness from the outer periphery to the center inside
Rough grinding machining allowance: 700μm thickness
Finish grinding machining allowance: thickness 33μm
Rough polishing and intermediate finish polishing machining allowance: 10 μm thickness
Final polishing machining allowance: thickness 12μm
Processing-limited stage and its footprint:
Rough polishing stage and intermediate finish polishing stage 5 minutes 48 seconds each Grinding fluid: Ion exchange water (pure water)
Abrasive liquid used for rough polishing, intermediate finish polishing, and finish polishing:
Colloidal silica abrasive slurry “Glanzox-1302 (trade name)” by Fujimi Incorporated
Substrate front and back surface cleaning liquid: ion exchange water Cleaning liquid used in the first cleaning equipment: SC for the first time, SC2 for the first time, ion exchange water for the last time Diamond cup wheel type rough grinding wheel grinding number: No. 500 Rotational speed: 2,400 min ^-1
Number of rotations of rough grinding stage suction chuck: 200 min ⁻¹
Number of diamond cup wheel type finishing grinding wheel: 8,000 Number of finishing grinding wheel shaft rotation: 1,700
Rotation speed of finish grinding stage suction chuck: 200 min ⁻¹
Polishing cloth for each polishing platen: SUBA1400 (trade name) manufactured by Nitta Haas
Number of rotations of substrate chuck during rough polishing and intermediate finish polishing: 41 min ⁻¹
Number of rotations of second and third polishing surface plates during rough polishing and intermediate finish polishing: 40 min ⁻¹
Number of rotations of substrate chuck during finish polishing: 21 min ⁻¹

Examples 2-3
In Example 1, the copper electrode head protrusion flattening process of the copper electrode penetrating silicon substrate (TSV wafer) was performed in the same manner except that the machining allowance of the TSV silicon substrate surface was performed under the processing conditions shown in Table 1. The copper electrode head protrusion height (μm) distribution of the obtained TSV wafer is shown in Table 1.

Table 1

Example 4
1. Using the substrate planarization apparatus shown in FIG. 1, the planarization processing of the backside silicon substrate of the DRAM substrate in which an adhesive protective sheet is pasted on the printed wiring surface of the semiconductor substrate having a diameter of 300 mm and a thickness of 775 μm under the following processing conditions Went. The surface average roughness Ra of the obtained DRAM having a silicon substrate with a thickness of 25 μm was 1 nm. No chipping or cracking of the DRAM was observed during the back surface planarization of the 26 DRAMs. The throughput time per DRAM was 4 minutes and 42 seconds.

Processing conditions:
Edge grinding allowance: 2mm width, 750μm thickness from the outer periphery to the center inside
Rough grinding machining allowance: Thickness 540 μm
Finish grinding machining allowance: Thickness 200μm
Rough polishing and intermediate finish polishing machining allowance: 8μm thickness
Final polishing machining allowance: Thickness 2μm
Processing-limited stage and its footprint:
4 minutes and 38 seconds each for rough polishing stage and intermediate finish polishing stage Grinding fluid: Ion-exchanged water
Abrasive liquid used for rough polishing, intermediate finish polishing, and finish polishing:
Colloidal silica abrasive slurry “Glanzox-1302 (trade name)” by Fujimi Incorporated
Substrate front and back surface cleaning liquid: ion exchange water Cleaning liquid used in the first cleaning equipment: SC for the first time, SC2 for the first time, ion exchange water for the last time Diamond cup wheel type rough grinding wheel grinding number: No. 500 Rotational speed: 2,400 min ^-1
Number of rotations of rough grinding stage suction chuck: 200 min ⁻¹
Number of diamond cup wheel type finishing grinding wheel: 8,000 Number of finishing grinding wheel shaft rotation: 1,700
Rotation speed of finish grinding stage suction chuck: 200 min ⁻¹
Polishing cloth for each polishing platen: SUBA1400 (trade name) manufactured by Nitta Haas
Number of rotations of substrate chuck during rough polishing and intermediate finish polishing: 41 min ⁻¹
Number of rotations of second and third polishing surface plates during rough polishing and intermediate finish polishing: 40 min ⁻¹
Number of rotations of substrate chuck during finish polishing: 21 min ⁻¹

  The planarization processing apparatus for a semiconductor substrate according to the present invention can perform grinding and polishing of the silicon base surface on the back surface of the semiconductor substrate with high throughput. In addition, it is possible to manufacture an extremely thin semiconductor substrate with a small number of foreign substances attached.

DESCRIPTION OF SYMBOLS 1 Substrate flattening processing device 2 Index type turntable 3 Substrate cleaning equipment 4 First positioning temporary placement table 5 Second positioning temporary placement table 6 Substrate front and back surface cleaning device 8 Chuck cleaning device 9 Edge grinding device 11 Partial chamber 11a Loading of substrate / Unloading stage chamber 11b Substrate grinding stage chamber 11c Substrate polishing stage chamber 12 Base 13 Storage cassette 14 First transfer type articulated substrate transfer robot 15 First temporary positioning table 15
16 Second transfer multi-joint type substrate transfer robot 17 Third multi-joint type transfer robot 20 Grinding stage 30a, 30b, 30c, 30d Substrate chuck table 70 Polishing stage 70a, 70b Substrate suction chuck 71 Index type head PS1 Temporary stand surface plate PS2, PS3, PS4 Polishing surface plate 90 Coarse grinding stage 91 Finish grinding stage

Claims (2)

The room for installing the flattening processing apparatus is divided into three chambers: an L-shaped semiconductor substrate loading / unloading stage chamber from the front, an intermediate semiconductor substrate polishing stage chamber, and a back semiconductor substrate grinding stage chamber. The partition wall is partitioned by a partition wall, and the partition wall between the stage chambers is provided with an opening through which a substrate leading to the adjacent stage chamber can be taken in and out, and a plurality of loads are provided outside the front wall chamber of the loading / unloading stage chamber. A flattening apparatus for a semiconductor substrate provided with a port substrate cassette,
A first transfer type articulated substrate transfer robot is provided in the chamber behind the load port in the loading / unloading stage chamber of the semiconductor substrate, a substrate cleaning device on the left side, and a first above the substrate cleaning device. Provided with a second transfer-type articulated substrate transfer robot at the back rear of the first positioning temporary table,
In the polishing stage chamber, a temporary mounting table surface plate provided with four circular temporary mounting tables on which the four substrates can be placed on the same circumference and at equal intervals, and two substrates are polished. The first, second, and third polishing surface plates of a planar circular polishing surface plate are installed so that the center points of these four surface plates are on the same circumference and can be rotated at equal intervals. And three dressers for dressing the polishing cloth of the polishing surface plate on the side of each of the three polishing surface plates, and one index type above the four surface plates. A substrate suction chuck mechanism comprising a head, and a pair of substrate suction chucks for suctioning the surface of the substrate to be polished downwards at the same time, independently and rotatably supported on the main shaft below the index type head A group capable of adsorbing and fixing eight substrates with four concentric circles arranged concentrically The polishing stage, each chuck means provided two pairs of each substrate adsorption chuck made it possible to face corresponding to one of four of the plate is provided,
In the semiconductor substrate grinding stage chamber, the second positioning temporary table is provided on the back side of the second transfer type articulated substrate transfer robot, and the hand arm front and back are on the right side of the second positioning temporary table. A rotary third articulated transfer robot is provided, a substrate front / back surface cleaning device is provided on the side of the third articulated transfer robot, and four pairs of substrate chuck tables are provided on the right side of the substrate front / back surface cleaning device. Are mounted on a single index type turntable so that they can rotate at equal intervals on the same circumference, and the four pairs of substrate chuck tables are loaded / unloaded stage chucks, substrate edge grinding stage chucks, The substrate rough grinding stage chuck and the substrate finishing grinding chuck position are index-stored in the numerical controller, and the substrate edge An edge grinding device is provided next to the grinding stage chuck to move the edge grinding wheel forward and backward and up and down, and the cup wheel type rough grinding wheel can be moved up and down and rotated above the substrate rough grinding stage chuck. And a cup wheel type finishing grinding wheel is provided above the substrate finishing grinding stage chuck so as to be movable up and down and rotatable, and the third articulated transfer robot is provided with a semiconductor on the second positioning temporary table. The substrate is transferred onto the loading / unloading stage chuck, the semiconductor substrate on the loading / unloading stage chuck is transferred onto the substrate front / back surface cleaning device, and the semiconductor substrate on the substrate front / back surface cleaning device is moved to the polishing stage. Gives the function of transferring to the temporary table surface plate in the room Providing a grinding stage chamber,
An apparatus for planarizing a semiconductor substrate, comprising: A method for flattening a back surface of a semiconductor substrate, comprising: planarizing a back surface of a semiconductor substrate through the following steps using the flattening apparatus for a semiconductor substrate according to claim 1.
1) A semiconductor substrate stored in a substrate storage cassette is moved into a loading / unloading stage chamber using a first transfer type articulated substrate transfer robot, and further transferred onto a positioning temporary placement table. The semiconductor substrate is centered on the mounting table.
2) Using the second transfer type articulated substrate transfer robot, the semiconductor substrate on the first positioning temporary table is transferred onto the second positioning temporary table in the grinding stage chamber. The semiconductor substrate is centered by the second positioning temporary table.
3) The semiconductor substrate on the second positioning temporary mounting table is placed on a loading / unloading stage chuck mounted on an index type turntable using a third articulated transfer robot, and then vacuum-adsorbed to the semiconductor substrate. The back surface of the material is fixed upward on the suction chuck.
4) The index type turntable is rotated 90 degrees counterclockwise, and the semiconductor substrate on the loading / unloading stage chuck is moved to the substrate edge grinding stage chuck position.
5) While rotating the substrate edge grinding stage chuck and moving the edge grinding wheel of the edge grinding apparatus to the front where the semiconductor substrate is located, the substrate is moved down by the rotating edge grinding wheel. Infeed edge grinding is performed to reduce the outer peripheral edge of the silicon substrate on the back surface of the semiconductor substrate on the edge grinding stage chuck to a desired thickness.
6) The index type turntable is rotated 90 degrees counterclockwise to move the semiconductor substrate on the substrate edge grinding stage chuck to the substrate rough grinding stage chuck position.
7) The substrate rough grinding stage chuck is rotated, and then the cup wheel type rough grinding wheel is lowered while rotating, and the outer peripheral edge is in contact with the silicon substrate surface of the edge-ground semiconductor substrate, and infeed rough grinding is performed. .
8) The index type turntable is rotated 90 degrees counterclockwise to move the semiconductor substrate on the substrate rough grinding stage chuck to the substrate finishing grinding stage chuck position.
9) The substrate finish grinding stage chuck is rotated, and then the cup wheel type finish grinding wheel is lowered and rotated to perform infeed finish grinding while abutting against the silicon substrate surface of the roughly ground semiconductor substrate.
10) The index type turntable is rotated 270 degrees clockwise or 90 degrees counterclockwise to move the semiconductor substrate on the substrate finish grinding stage chuck to the loading / unloading stage chuck upper position.
11) A semiconductor substrate subjected to edge grinding / rough grinding and finish grinding fixed on the loading / unloading stage chuck is transferred to a base substrate front / back surface cleaning device using a third articulated transfer robot. Then, the front and back surfaces of the semiconductor substrate are cleaned.
12) Use the third articulated transfer robot to transfer the semiconductor substrate on the substrate front and back surface cleaning device onto a temporary table surface plate in the polishing stage chamber, so that the silicon substrate surface of the semiconductor substrate The front and back are reversed so as to face, and then placed on the temporary table.
13) Return the transfer arm of the third articulated transfer robot to the standby position.
14) The third multi-joint is connected to the next semiconductor substrate on the substrate front / back surface cleaning apparatus that has been subjected to edge grinding, rough grinding, finish grinding, and double-sided cleaning during the steps 1) to 13). Use a mold transfer robot to transfer it to the temporary table in the polishing stage chamber, reverse the front and back so that the silicon substrate surface of the semiconductor substrate faces downward, and then open the temporary table Place it on the position.
15) The temporary mounting table on which the two semiconductor substrates are mounted is rotated 180 degrees. Next, a pair of substrate suction chucks provided below the index-type head is lowered from above the temporary table base, and the first and second semiconductor substrates are sucked. Raise a pair.
16) The main shaft of the index type head is rotated 90 degrees clockwise, and a pair of substrate suction chucks holding the two semiconductor substrates on the lower surface is moved to a position facing the first polishing surface plate.
17) While rotating the first polishing surface plate, the pair of substrate chucks are lowered while rotating, and the silicon base surfaces of the two semiconductor substrates are rubbed against the first polishing surface plate. Rough polishing is performed.
18) The main axis of the index-type head is rotated 90 degrees clockwise, and a pair of substrate suction chucks holding the two roughly polished semiconductor substrates on the lower surface is moved to a position facing the second polishing surface plate. And move.
19) While rotating the second polishing surface plate, lowering the pair of substrate suction chucks while rotating them, and sliding the silicon base surfaces of the two semiconductor substrates against the second polishing surface plate. Medium finish polishing.
20) A position where the pair of substrate chucks holding the two semi-finished semiconductor substrates on the lower surface is opposed to the third polishing surface plate by rotating the main shaft of the index type head 90 degrees clockwise. Move to.
21) While rotating the third polishing platen, the pair of substrate suction chucks are lowered while rotating, and the silicon base surfaces of the two semiconductor substrates are rubbed against the third polishing platen. Perform precision finish polishing. After polishing, the pair of substrate suction chucks are raised to leave two semiconductor substrates on the third polishing surface plate.
22) The main axis of the index-type head is rotated 90 degrees clockwise or counterclockwise 270 degrees, and a pair of substrate suction chucks holding the two finished polished semiconductor substrates on the lower surface is temporarily placed. The semiconductor substrate moves to a position facing the board, and the two semiconductor substrates sucked by the pair of substrate chucks are brought into contact with the surface of the temporary table base. Thereafter, the compressed air is blown from the pair of back surfaces of the substrate suction chuck to release the fixing of the semiconductor substrate from the substrate suction chuck, and then the supply of the pressurized air is stopped. After raising the pair, the two precision-finished and polished semiconductor substrates are left on the temporary table surface plate, and then the temporary table surface plate is rotated 180 degrees.
23) A semiconductor that has been subjected to precision finish polishing that is placed on the temporary table base in the polishing stage using the second transfer-type transfer articulated substrate transfer robot in the loading / unloading stage. The first semiconductor substrate on one side of the substrate is gripped, and then the precision-finished and polished first semiconductor substrate is transferred onto a substrate cleaning device, where the precision-finished and polished semiconductor substrate is subjected to spin cleaning. Do. During the spin cleaning, the second transfer-type transfer articulated substrate transfer robot returns to the standby position.
24) The cleaned first semiconductor substrate w on the substrate cleaning device is gripped by using the first transfer type transfer type transfer type articulated substrate transfer robot and transferred into the storage cassette at the load port position. Storing. During this time, the second precision finish polishing semiconductor substrate is gripped by the second transfer type transfer articulated substrate transfer robot, and then the precision finish polishing second semiconductor substrate is cleaned by the substrate cleaning. The semiconductor substrate that has been transferred to the equipment and precision-polished and polished is subjected to spin cleaning.
25) Grasp the second semiconductor substrate w cleaned on the substrate cleaning device using the first transfer type transfer type multi-joint type substrate transfer robot, and transfer it into the storage cassette at the load port position; Store.

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