CN105252406A - Polishing method for silicon wafer - Google Patents
Polishing method for silicon wafer Download PDFInfo
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- CN105252406A CN105252406A CN201510574048.8A CN201510574048A CN105252406A CN 105252406 A CN105252406 A CN 105252406A CN 201510574048 A CN201510574048 A CN 201510574048A CN 105252406 A CN105252406 A CN 105252406A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a polishing method for a monocrystalline silicon wafer, in particular to a polishing process capable of on-line detecting a PH value. The polishing quality is improved by improving the polishing process (such as the components of a polishing solution, polishing pressure, polishing time, the rotation speed of polishing). Change of the PH value of the polishing solution can be detected in time, and accordingly a PH modifier is added in time to control the PH value precisely. In this way, the degree of variation of geometrical parameters of the surface of the silicon wafer can be lowered in the polishing process of the silicon wafer, and accordingly the success rate of the final product is improved. In addition, the polishing time can be reduced, and the production efficiency can be improved.
Description
Technical field
The present invention relates to a kind of finishing method of monocrystalline silicon piece, be specifically related to a kind of glossing of on-line checkingi polishing fluid pH value, belong to the manufacture field of monocrystalline silicon.
Background technology
Along with the develop rapidly of ic manufacturing technology, the needs that silicon chip ever-larger diameters is that integrated circuit technique live width attenuates, number of elements increases, die area increases and reduces costs are development trends of silicon materials.Silicon chip surface polishing degree is one of most important factor affecting electronic component quality and reliability, ever-reduced electronics live width, the surface quality of silicon chip is had higher requirement, require not damaged layer, less roughness and better flatness, this just proposes higher required precision to polishing.
Chemically mechanical polishing (CMP) is semiconductor material surface planarizing technique the most general at present, and it is technique mechanical friction and chemical attack combined, and has taken in the advantage of the two concurrently, can obtain more perfect wafer surface.What silicon chip CMP generally adopted is alkaline silicon dioxide polishing solution, utilize the chemical attack of alkali and silicon to react and generate soluble silicate, pass through small, flexible again, specific area is large, with the SiO2 micelle of negative electrical charge suction-operated and and mechanical friction effect between polishing pad and slice, thin piece, timely removal product, thus reaching the polishing object removed wafer surface damage layer and stain impurity, the acting in conjunction process of this chemistry and machinery is exactly the CMP process of silicon chip.
In glossing, the temperature controlled in the pH value of polishing fluid, the concentration of polishing fluid, flow and polishing process, wherein pH value the having the greatest impact to polishing clearance of polishing fluid, the pH value of polishing fluid has close contact to polished silicon wafer quality, but polishing fluid pH value easily drifts about, the instability of pH value can affect the effect of silicon wafer polishing, as flatness, roughness, scuffing etc.
At present, drift about for preventing joined polishing fluid PH, enterprise generally takes " matching while using " in producing, measure pH value by producers' timing in production process to judge, the control mode of pH value generally adopts titration mode and PH test paper alignments to detect, all there is significant limitation in these two kinds of methods, exist human error, can not real-time continuous detection and control.
In order to improve silicon wafer polishing quality, reduce the scuffing of silicon chip surface, reduce the roughness of silicon chip surface and improve silicon chip surface flatness, there is the control program that all different polishing fluids and surface of polished scratch in recent years, as patent CN101733697B, CN101367189A and CN103144011A.
The object of patent of the present invention is to provide a kind of finishing method of silicon chip, quality of finish is improved by improving glossing, especially a kind of glossing of on-line checkingi pH value is provided, the change of polishing fluid pH value can be detected in time, thus interpolation PH conditioning agent accurately controls pH value in time, the degree that in silicon wafer polishing process, silicon chip surface geometric parameter is deteriorated can be reduced, improve the success rate of final products; Can also polishing time be reduced, enhance productivity.
Summary of the invention
The object of patent of the present invention is to provide a kind of finishing method of silicon chip, quality of finish is improved by improving glossing (as polishing fluid component, polish pressure, polishing rotating speed etc.), especially a kind of glossing of on-line checkingi pH value is provided, the change of polishing fluid pH value can be detected in time, thus interpolation PH conditioning agent accurately controls pH value in time, the degree that in silicon wafer polishing process, silicon chip surface geometric parameter is deteriorated can be reduced, improve the success rate of final products; Can also polishing time be reduced, enhance productivity.
Object of the present invention is mainly achieved through the following technical solutions.
The finishing method of silicon chip of the present invention, subsides wax machine is utilized by silicon chip to be pasted onto on the polishing disk of polishing machine by silicon chip, then polishing disk is fixed on polishing machine ramming head, control the pressure of polishing machine, the rotating speed, polishing time etc. of polishing disk, and inject polishing fluid between polishing disk and silicon chip, utilize PH to count in polishing process and polishing fluid pH value is accurately controlled; It is characterized in that, described polishing fluid comprises abrasive material, PH conditioning agent, oxidant, surfactant, chelating agent and deionized water etc.; Polish pressure controls at 25-50kpa; Polishing disk rotating speed controls at 30-60rpm interval; Polishing pad is the non-woven fabrics polishing pad of band fluff structures; Polishing fluid pH value accurately controls by PH meter is online.
The finishing method of aforesaid silicon chip, it is characterized in that, described polishing fluid comprises abrasive material, PH conditioning agent, oxidant, surfactant, chelating agent and deionized water etc., and shared by each component, percentage by weight is respectively: abrasive material 5%-30%, organic base 1%-3%, PH conditioning agent 3%-15%, oxidant 0.01%-5%, surfactant 0.1%-1.0%, chelating agent 0.01%-1%, deionized water are surplus.With for subsequent use after polishing fluid prepares.
Cataloid (SiO2) particle of described polishing fluid abrasive material to be particle diameter be 70-90nm; PH conditioning agent is inorganic base or organic base, is mainly one or more in ethylenediamine, triethylene tetramine, TMAH; Oxidant is hydrogen peroxide, potassium peroxydisulfate or both mixtures; Surfactant is polyethylene glycol, AEO or both mixtures; Chelating agent is a kind of in ethylenediamine tetra-acetic acid, disodium ethylene diamine tetraacetate, azanol or amine or their combination.
The finishing method of aforesaid silicon chip, is characterized in that, described polishing fluid pH value is that polishing fluid pH value scope is 9-12, is preferably 10-11, and described PH conditioning agent is inorganic base or organic base by the online accurately test of PH meter.The pH value of polishing fluid has the greatest impact to polishing clearance, along with the increase of polishing fluid pH value, polishing clearance progressively improves, but when pH value reaches certain value, clearance reduces rapidly, and polished surface Quality Down, so one of parameter important in silicon chip working process when determining the polishing fluid pH value be suitable for.When pH value is less than 9, the clearance of polishing is too little, and chemical polishing speed is less than mechanical polishing rate, easily causes the defects such as scuffing; When pH value is greater than 12, polishing clearance declines, and is greater than mechanical polishing rate due to chemical polishing speed, and orange peel and etch pit easily appear in polished silicon wafer surface.
In polishing process, accurate PH is counted electrode and is placed in the polishing fluid of polishing pad, Accurate Measurement pH value, and feed back on PH conditioning agent flow controller.By the flow of setting requirement control PH conditioning agent soda acid, thus realize the acid-base value controlling polishing fluid.Throw the requirement to pH value according to rough polishing, fine polishing and essence respectively, arrange the pH value scope of different phase, once depart from, flow controller can respond immediately, adds the pH value scope that pH value is returned to setting by PH conditioning agent.
The finishing method of aforesaid silicon chip, is characterized in that, described polish pressure controls at 25-50kpa.When polish pressure is less than 25kpa, wafer has thrown rear surface roughness descent, and edge corrosion is fast, and middle corrosion is slow, therefore high in the middle of, edge is low, and orange peel shape ripple and etch pit appear in the surface of polished silicon wafer, this is because machine glazed finish speed is less than, chemical polishing speed causes, cause normally producing, and polish pressure too small time, add polishing time, reduce polishing efficiency; When polish pressure is greater than 50kpa, wafer polishing rear surface flatness improves, but poor surface smoothness, and easily occurs scratching, easy fragment in polishing process, this is because machine glazed finish speed is greater than, chemical polishing speed causes.Therefore determine that the polish pressure be suitable for is one of important parameter in silicon chip production process.
The finishing method of aforesaid silicon chip, it is characterized in that, described polishing rotating speed controls at 30-60rpm interval, when polishing rotating speed is less than 30rpm, polishing disk rotating speed is too slow, and polishing time is longer, and silicon chip after polishing is less than chemical polishing speed due to machine glazed finish speed, there is orange peel, etch pit etc. in surface, silicon polishing face, impact is normally produced; When polishing rotating speed is greater than 60rpm, polishing disk rotating speed is too fast, because machine glazed finish speed is greater than chemical polishing speed, causes silicon polishing surface easily to occur scratching, and rupture diaphragm; Therefore determine that the polishing rotating speed be suitable for is one of important parameter in silicon chip production process.
The finishing method of aforesaid silicon chip, is characterized in that, described polishing pad is the non-woven fabrics polishing pad of band fluff structures.Polishing pad plays an important role in whole polishing process, and it can also provide the polishing fluid newly supplemented into except can making polishing fluid and being effectively uniformly distributed, and can successfully reacted polishing fluid and product be discharged.This polishing pad is based on non-woven fabrics, and middle one deck is polymer, and superficial layer is the fluff structures of porous.This polishing pad has that hardness is little, compression ratio is large and good springiness etc., this polishing due to fine hair longer, when polishing pad is under pressure, polishing fluid can enter in cavity, and original state can be returned to when earth pressure release, old polishing fluid and reactant discharged and supplements new polishing fluid, thus obtaining good polishing effect.
Will take into account polishing speed and polishing effect two aspects during polishing, can not covet polishing speed and ignore quality of finish, and parameters should mate mutually.
The glossing parameter of aforesaid silicon chip polishing method and selection, the blemish such as silicon polished no marking, orange peel, mist obtained, roughness controls at below 0.2nm, and total thickness deviation TTV is less than 0.1um, and local flatness SFQR (26*8mm) is less than 50nm.
The invention has the advantages that, utilize the polishing fluid of rational formula, and in polishing process, utilize online PH meter accurately to control pH value, prevent the impact of drift on polishing effect of PH; Adjustment controls polish pressure and the rotating speed of polishing machine, have selected suitable polishing pad, effectively can reduce the degree that in silicon wafer polishing process, silicon chip surface geometric parameter is deteriorated, improve polishing effect and production efficiency, the final success rate improving product.
Accompanying drawing explanation
Fig. 1 is CMP polishing technology schematic diagram of the present invention.
Fig. 2 is CMP polishing technology process chart of the present invention.
Detailed description of the invention
For a more clear understanding of the present invention, by processing step, the present invention is described in further detail:
(1) by summary of the invention preparation polishing fluid;
(2) clean monocrystalline silicon piece is carried out the operation of subsides wax to silicon chip automatically by chip mounter, deliver to after paster terminates on polishing machine and prepare polishing;
(3) select glossing parameter by summary of the invention, comprise polishing fluid, polish pressure, polishing machine rotating speed, polishing time etc., utilize polishing machine to carry out polishing;
(4), in polishing process, count on-line checkingi by PH and accurately control pH value;
(5) monocrystalline silicon piece of wax polishing is had to carry out dewax cleaning to passing through;
(6), after polishing, silicon chip is peeled off from ceramic wafer;
(7) silicon polished from ceramic wafer peel off after carry out dewax cleaning;
(8) silicon chip after cleaning is tested: in darkroom, utilize microexamination bad with or without scuffing, orange peel, hole etc.; The ADEAFS6330 utilizing ADE Co. to produce measures the geometric parameter of silicon chip surface; With granule detecting instrument inspection surface cleanliness.
embodiment 1
CZ method is adopted to cultivate the silicon single crystal rod that 12 inches of P type resistivity are 120 Ω cm, after by section, chamfering, abrasive disc, burn into cleaning, select 10 after conventional polishing machine (Japanese SpeedFam company produces) polishing, use CMP technology to the further polishing of silicon chip, the method choice preparation polishing fluid of setting forth according to summary of the invention and detailed description of the invention is with for subsequent use.
The present invention carries out under 25-30 DEG C of environment.
According to glossing flow process, polished is pasted onto on the polishing disk of polishing machine, the polishing disk being stained with silicon chip is fixed on machine ramming head, adjustment polishing machine makes polish pressure gradually rise to 35kpa, and control at 35kpa, controlling polishing disk rotating speed is 40rpm, utilizes PH to count and accurately controls pH value within the scope of 10.2-10.6, and the polishing pad of use is for being with the non-woven fabrics polishing pad of fluff structures.The average 6.5 minutes/sheet of polishing time.
After completing the polishing to wafer, clean with cleaning machine, 10 silicon chips after cleaning are tested: find that all silicon polishing faces are bad without scuffing, orange peel etc.; Surface cleanliness is good; Silicon chip Ra<0.2nm, TTV<0.1um, SQIR (28mm*6mm) <50nm after polishing, 10 whole qualified.
comparative example 1
CZ method is adopted to cultivate the silicon single crystal rod that 12 inches of P type resistivity are 120 Ω cm, after by section, chamfering, abrasive disc, burn into cleaning, select 10 after conventional polishing machine (Japanese SpeedFam company produces) polishing, use CMP technology to the further polishing of silicon chip, the method choice preparation polishing fluid of setting forth according to summary of the invention and detailed description of the invention is with for subsequent use.
Polishing is carried out by embodiment 1 polishing environment.
According to glossing flow process, polished is pasted onto on the polishing disk of polishing machine, the polishing disk being stained with silicon chip is fixed on machine ramming head, adjustment polishing machine makes polish pressure gradually rise to 35kpa, and control at 35kpa, controlling polishing disk rotating speed is 40rpm, utilizes PH test paper to measure pH value, pH value is within the scope of 9.5-11, and the polishing pad of use is for being with the non-woven fabrics polishing pad of fluff structures.The average 9 minutes/sheet of polishing time.
After completing the polishing to wafer, clean with cleaning machine, 10 silicon chips after cleaning are tested: silicon chip Ra<0.25nm, TTV<0.15um, SQIR (28mm*6mm) <55nm after polishing; All silicon polishing faces are bad without orange peel, etch pit etc., but have 2 to there is minute scratch marks.
embodiment 2
CZ method is adopted to cultivate the silicon single crystal rod that 12 inches of P type resistivity are 120 Ω cm, after by section, chamfering, abrasive disc, burn into cleaning, select 10 after conventional polishing machine (Japanese SpeedFam company produces) polishing, use CMP technology to the further polishing of silicon chip, the method choice preparation polishing fluid of setting forth according to summary of the invention and detailed description of the invention is with for subsequent use.
The present invention carries out under 25-30 DEG C of environment.
According to glossing flow process, polished is pasted onto on the polishing disk of polishing machine, the polishing disk being stained with silicon chip is fixed on machine ramming head, adjustment polishing machine makes polish pressure gradually rise to 50kpa, and control at 50kpa, controlling polishing disk rotating speed is 40rpm, utilizes PH to count and accurately controls pH value within the scope of 10.2-10.6, and the polishing pad of use is for being with the non-woven fabrics polishing pad of fluff structures.The average 6 minutes/sheet of polishing time.
After completing the polishing to wafer, clean with cleaning machine, 10 silicon chips after cleaning are tested: find that all silicon polishing faces are bad without scuffing, orange peel etc.; Surface cleanliness is good; Silicon chip Ra<0.2nm, TTV<0.1um, SQIR (28mm*6mm) <50nm after polishing, 10 whole qualified.
comparative example 2
CZ method is adopted to cultivate the silicon single crystal rod that 12 inches of P type resistivity are 120 Ω cm, after by section, chamfering, abrasive disc, burn into cleaning, select 10 after conventional polishing machine (Japanese SpeedFam company produces) polishing, use CMP technology to the further polishing of silicon chip, the method choice preparation polishing fluid of setting forth according to summary of the invention and detailed description of the invention is with for subsequent use.
Polishing is carried out by embodiment 2 polishing environment.
According to glossing flow process, polished is pasted onto on the polishing disk of polishing machine, the polishing disk being stained with silicon chip is fixed on machine ramming head, adjustment polishing machine makes polish pressure gradually rise to 20kpa, and control at 20kpa, controlling polishing disk rotating speed is 40rpm, utilizes PH to count and accurately controls pH value within the scope of 10.2-10.6, and the polishing pad of use is for being with the non-woven fabrics polishing pad of fluff structures.The average 8 minutes/sheet of polishing time.
After completing the polishing to wafer, clean with cleaning machine, 10 silicon chips after cleaning are tested: silicon chip Ra<0.22nm, TTV<0.12um, SQIR (28mm*6mm) <51nm after polishing; All silicon polishing faces without scuffing, but have 1 to there is orange peel and a small amount of etch pit.
comparative example 3
CZ method is adopted to cultivate the silicon single crystal rod that 12 inches of P type resistivity are 120 Ω cm, after by section, chamfering, abrasive disc, burn into cleaning, select 10 after conventional polishing machine (Japanese SpeedFam company produces) polishing, use CMP technology to the further polishing of silicon chip, the method choice preparation polishing fluid of setting forth according to summary of the invention and detailed description of the invention is with for subsequent use.
Polishing is carried out by embodiment 2 polishing environment.
According to glossing flow process, polished is pasted onto on the polishing disk of polishing machine, the polishing disk being stained with silicon chip is fixed on machine ramming head, adjustment polishing machine makes polish pressure gradually rise to 65kpa, and control at 20kpa, controlling polishing disk rotating speed is 40rpm, utilizes PH to count and accurately controls pH value within the scope of 10.2-10.6, and the polishing pad of use is for being with the non-woven fabrics polishing pad of fluff structures.The average 8 minutes/sheet of polishing time.
After completing the polishing to wafer, clean with cleaning machine, 10 silicon chips after cleaning are tested: find that polylith silicon chip surface has a large amount of cut, qualification rate is extremely low.
embodiment 3
CZ method is adopted to cultivate the silicon single crystal rod that 12 inches of P type resistivity are 120 Ω cm, after by section, chamfering, abrasive disc, burn into cleaning, select 10 after conventional polishing machine (Japanese SpeedFam company produces) polishing, use CMP technology to the further polishing of silicon chip, the method choice preparation polishing fluid of setting forth according to summary of the invention and detailed description of the invention is with for subsequent use.
The present invention carries out under 25-30 DEG C of environment.
According to glossing flow process, polished is pasted onto on the polishing disk of polishing machine, the polishing disk being stained with silicon chip is fixed on machine ramming head, adjustment polishing machine makes polish pressure gradually rise to 35kpa, and control at 35kpa, controlling polishing disk rotating speed is 60rpm, utilizes PH to count and accurately controls pH value within the scope of 10.2-10.6, and the polishing pad of use is for being with the non-woven fabrics polishing pad of fluff structures.The average 6.5 minutes/sheet of polishing time.
After completing the polishing to wafer, clean with cleaning machine, 10 silicon chips after cleaning are tested: silicon chip Ra<0.25nm, TTV<0.15um, SQIR (28mm*6mm) <55nm after polishing; All silicon polishing faces are bad without orange peel, etch pit etc.
comparative example 4
CZ method is adopted to cultivate the silicon single crystal rod that 12 inches of P type resistivity are 120 Ω cm, after by section, chamfering, abrasive disc, burn into cleaning, select 10 after conventional polishing machine (Japanese SpeedFam company produces) polishing, use CMP technology to the further polishing of silicon chip, the method choice preparation polishing fluid of setting forth according to summary of the invention and detailed description of the invention is with for subsequent use.
Polishing is carried out by embodiment 3 polishing environment.
According to glossing flow process, polished is pasted onto on the polishing disk of polishing machine, the polishing disk being stained with silicon chip is fixed on machine ramming head, adjustment polishing machine makes polish pressure gradually rise to 35kpa, and control at 35kpa, controlling polishing disk rotating speed is 70rpm, utilizes PH to count and accurately controls pH value within the scope of 10.2-10.6, and the polishing pad of use is for being with the non-woven fabrics polishing pad of fluff structures.The average 5 minutes/sheet of polishing time.
After completing the polishing to wafer, clean with cleaning machine, 10 silicon chips after cleaning are tested: find that polylith silicon chip surface has a large amount of cut, qualification rate is extremely low.
Claims (10)
1. the finishing method of a silicon chip, CMP polishing technology is adopted to carry out polishing to ground silicon chip, quality of finish is improved by improving glossing (as polishing fluid component, polish pressure, polishing time, polishing rotating speed etc.), especially the glossing providing a kind of on-line checkingi pH value accurately controls pH value, the degree that in silicon wafer polishing process, silicon chip surface geometric parameter is deteriorated can be reduced, improve the success rate of final products; Can also polishing time be reduced, enhance productivity.
2. the finishing method of silicon chip according to claim 1, it is characterized in that described polishing fluid comprises abrasive material, PH conditioning agent, oxidant, surfactant, chelating agent and deionized water etc., shared by each component, percentage by weight is respectively: abrasive material 5%-30%, organic base 1%-3%, PH conditioning agent 3%-15%, oxidant 0.01%-5%, surfactant 0.1%-1.0%, chelating agent 0.01%-1%, deionized water are surplus.
3. the finishing method of the silicon chip according to claim 1-2, is characterized in that described polishing fluid pH value accurately controls by PH meter is online.
4. the finishing method of the silicon chip according to claim 1-3, it is characterized in that described polishing fluid pH value scope is 9-12, be preferably 10-11, described PH conditioning agent is inorganic base or organic base.
5. the finishing method of the silicon chip according to claim 1-4, is characterized in that described polish pressure controls at 25-50kpa.
6. the finishing method of the silicon chip according to claim 1-5, is characterized in that described polishing disk rotating speed controls at 30-60rpm interval.
7. the finishing method of the silicon chip according to claim 1-6, is characterized in that described polishing pad is the non-woven fabrics polishing pad of band fluff structures.
8. the silicon chip that the silicon chip polishing method according to claim 1-7 obtains, is characterized in that obtained silicon polished surface roughness Ra controls at below 0.2nm.
9. the silicon chip that the silicon chip polishing method according to claim 1-8 obtains, is characterized in that obtained silicon polished total thickness deviation TTV (GBIR) is less than 0.1um, and local flatness SFQR (26*8mm) is less than 50nm.
10. the silicon chip that the silicon chip polishing method according to claim 1-9 obtains, is characterized in that the obtained defect such as silicon polished no marking, orange peel, etch pit, mist.
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| CN105922124A (en) * | 2016-05-24 | 2016-09-07 | 广东工业大学 | Fluid dynamic-pressure polishing device of semiconductor substrate and polishing method thereof |
| CN106926112A (en) * | 2017-04-28 | 2017-07-07 | 青岛鑫嘉星电子科技股份有限公司 | A kind of the cut control system and control method of Sapphire Substrate polishing |
| CN106956212A (en) * | 2017-03-17 | 2017-07-18 | 衢州学院 | A kind of aluminium nitride chip polishing method of use chemical polishing solution and ceramic polished disk |
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