CN111251163A - Processing method for polished silicon wafer with hydrophilic surface - Google Patents
Processing method for polished silicon wafer with hydrophilic surface Download PDFInfo
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- CN111251163A CN111251163A CN201811462180.XA CN201811462180A CN111251163A CN 111251163 A CN111251163 A CN 111251163A CN 201811462180 A CN201811462180 A CN 201811462180A CN 111251163 A CN111251163 A CN 111251163A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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Abstract
The invention discloses a processing method of a polished silicon wafer with a hydrophilic surface. The method comprises the process of carrying out chemical mechanical polishing treatment on a silicon wafer by using polishing cloth and polishing liquid, wherein the process comprises a rough polishing step, a middle polishing step and a fine polishing step; the rough polishing step, the middle polishing step and the fine polishing step are respectively carried out according to four stages, wherein polishing liquid is adopted for polishing from the first stage to the third stage, and pure water is adopted for polishing in the fourth stage; the grinding agent used in the middle polishing step and the fine polishing step is SiO with the average grain diameter of 3-80nm2Diluting colloidal polishing stock solution with pure water in a particle alkaline polishing solution and a dilution ratio of 1: 20-100; polishing time control of the fourth stage of the finish polishing stepIn the range of 0-15 s; after finishing the fine polishing step, soaking the polished silicon wafer into pure water containing 0.02-1% of surfactant. The invention can obtain the hydrophilic polished wafer surface and improve the level of surface particles of the silicon wafer after RCA cleaning.
Description
Technical Field
The invention relates to a processing method for obtaining a polished silicon wafer with a hydrophilic surface, and belongs to the technical field of semiconductor materials.
Background
Semiconductor wafers are the main substrate material of modern very large scale integrated circuits and are generally manufactured by the processes of single crystal growth, tumbling, slicing, chamfering, grinding, etching, back processing (one or more of sand blasting, polycrystalline or silicon dioxide), polishing, cleaning, inspection, packaging and the like. The planarization of the surface of a silicon wafer by Chemical Mechanical Polishing (CMP) is the most common planarization technique for obtaining the surface of a semiconductor material at present, and has become one of the essential process steps in the integrated circuit manufacturing technology after the deep submicron technology age. The chemical mechanical polishing integrates the characteristics of no damage of chemical polishing and easy obtaining of flat and bright surface of mechanical polishing. In the polishing process of the silicon wafer, two functions of chemical corrosion and mechanical friction are alternately and circularly carried out, so that the mechanical damage of the surface of the silicon wafer, which is remained in the previous working procedure, is removed, and a mirror surface which is flat, bright, free of damage and high in geometric precision is obtained.
Generally, the polishing of the silicon wafer can be divided into three steps of rough polishing, middle polishing and fine polishing. The purpose of rough polishing is to efficiently remove a damage layer and a distortion layer caused by grinding, and reach certain flatness, and the requirement of rough polishing is to realize high efficiency and high speed rate under the condition of ensuring the flatness; the main task of the middle polishing is to remove a damage layer existing in the rough polishing process, further improve the flatness of the silicon wafer and reduce the roughness of the surface of the silicon wafer; the main task of the fine polishing is to remove a damaged layer existing in the middle polishing process, realize low surface roughness and avoid fog under strong spotlight vertical irradiation. The fine polishing is the last step of silicon wafer processing, and the electrical characteristics of the device are directly influenced by the quality of the fine polishing result.
With the development of very large scale integrated circuits, the integration level is continuously improved, the line width is continuously reduced, the diameter of a silicon wafer is increased, the requirement on the perfection of the surface of the silicon wafer is higher and higher, and the number and the diameter of particles allowed to remain on the surface of the polished silicon wafer are smaller and smaller. The particles on the surface of the polished silicon wafer can cause the pattern defect and the epitaxial defect of a subsequent device and influence the integrity of the layout, and are the biggest obstacles to high yield. Therefore, the control of the particles on the surface of the silicon wafer is the key of the silicon wafer processing process. The surface particle level of the polished silicon wafer is related to the cleaning capability of a cleaning machine, the cleanliness of the environment and the chemical atmosphere level, the cleanliness of a wafer box for containing the silicon wafer, the polishing process of the silicon wafer and other factors. The level of the surface particles of the polished silicon wafer after cleaning has a very large relationship with whether the polished surface is hydrophilic or not. If the surface of the polished silicon wafer is hydrophobic, pure water containing a small amount of polishing solution is easy to condense into water drops on the surface of the silicon wafer, a water film cannot be formed on the surface of the silicon wafer, foreign matters can be attached to the surface of the silicon wafer, the particle level of the surface of the silicon wafer is greatly reduced after megasonic cleaning of the silicon wafer by RCA cleaning solution, meanwhile, uneven haze is caused by uneven etching of the surface of the silicon wafer by strong alkali in the polishing solution, SLURYMARK (trace generated by corrosion of the polishing solution on the surface of the silicon wafer) is generated in serious cases, great trouble and yield loss are caused for normal production, and therefore, the surface of the polished silicon wafer is hydrophilic, which is extremely important.
Factors influencing whether the surface is hydrophilic after the finish polishing are more, such as the service life of the finish polishing cloth, the types of the finish polishing pad and the finish polishing solution, the proportion of the finish polishing solution, the pretreatment ("activation") of the finish polishing cloth and the like. Currently, in order to obtain a hydrophilic polishing pad surface, it is common practice to add active agent polishing in the fourth stage of the finish polishing step. However, in the actual production process, the hydrophilic surface obtained by the method is not very stable, the silicon wafer surface is often in a semi-hydrophilic and semi-hydrophobic state (a part of the silicon wafer surface is hydrophilic, and a part of the silicon wafer surface is hydrophobic, especially the edge part of the silicon wafer), and the fluctuation of the particle yield is also large. Therefore, different polishing processes have great influence on the hydrophilicity of the polished silicon wafer and the surface particle level of the silicon wafer, and the polishing process has room for continuous improvement and perfection.
Disclosure of Invention
The invention aims to provide a processing method of a polished silicon wafer with a hydrophilic surface, which aims to solve the problem that the hydrophilic surface obtained by the existing polishing processing method is unstable, thereby improving the particle level of the surface of the polished silicon wafer and improving the yield of products.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for processing a polished silicon wafer to obtain a hydrophilic surface comprises a process of performing Chemical Mechanical Polishing (CMP) treatment on the silicon wafer by using polishing cloth (polishing pad) and polishing liquid, wherein the process comprises a rough polishing step, a middle polishing step and a fine polishing step; the rough polishing step, the middle polishing step and the fine polishing step are respectively carried out according to four stages, wherein polishing liquid is adopted for polishing from the first stage to the third stage, and pure water is adopted for polishing in the fourth stage; the grinding agent used in the middle polishing step and the fine polishing step is SiO with the average grain diameter of 3-80nm2Diluting colloidal polishing stock solution with pure water in a particle alkaline polishing solution and a dilution ratio of 1: 20-100; the polishing time of the fourth stage of the fine polishing step is controlled to be 0-15 s; after finishing the fine polishing step, soaking the polished silicon wafer into pure water containing 0.02-1% of surfactant.
The method uses the same fine polishing liquid as the fine polishing step in the middle polishing step, and mainly weakens the influence of SLURRYMARK by greatly improving the roughness of the surface of the silicon wafer. The roughness of the surface of the silicon chip is reduced, the surface of the silicon chip is hydrophilic, and SLURRRYMARK cannot be observed under a microscope, so that 100% of products can be free of SLURRYMARK. The hydrophilicity of the surface of the silicon wafer can prevent the polishing solution from corroding the local part of the surface of the silicon wafer, and the uniform corrosion of the surface of the silicon wafer by the polishing solution only can slightly deteriorate the surface roughness of the polished wafer. The invention also greatly improves the roughness of the surface of the silicon wafer.
Preferably, the abrasive used in the middle polishing step and the fine polishing step contains water-soluble cellulose having a molecular weight of 400,000 or more and an alkaline compound of ammonia. The water-soluble cellulose can play a hydrophilic role on the surface of the silicon wafer.
Preferably, in the middle polishing step, the flow rate of the polishing solution is 4-10L/min; the polishing pressure of the second stage is controlled at 150-250g/cm2The rotation speed of a large disc and a polishing head of the second-stage polishing machine is controlled to be 30-50rpm, and the polishing time of the second stage is controlled to be 3-12 min; the pure water polishing time of the fourth stage is 0.5-2min, and the pure water flow is 4-15L/min;
preferably, the fine polishing cloth used in the fine polishing step is subjected to an activation treatment before use, and the activation treatment is: polishing liquid adopted in the fine polishing step is applied to polishing cloth, a nylon brush disc is used for brushing the fine polishing cloth, the rotating speed of a large disc of a polishing machine and the rotating speed of a polishing head are controlled to be 15-40rpm during brushing, the brushing time of the polishing liquid is controlled to be 10-120min, the polishing liquid is closed, and the fine polishing cloth can be activated after brushing is carried out for 2min by pure water.
Preferably, the temperature of each stage of the fine polishing step is controlled to be 17-30 ℃, the rotating speed of a large disc and the rotating speed of a polishing head of the polishing machine are controlled to be 15-40rpm, and the polishing pressure of the second stage is controlled to be 50-150g/cm2。
Preferably, after finishing the fine polishing step, in order to improve the surface hydrophilicity of the silicon wafer, the polished silicon wafer is immediately immersed in pure water containing a surfactant for more than 2min, and the temperature of the pure water is controlled to be 13-23 ℃. The process improves the hydrophilicity of the surface of the silicon wafer (soaking the silicon wafer by using a surfactant), and reduces the SLURRRYMARK generated by the corrosion of polishing solution on the surface of the silicon wafer by reducing the temperature of a water tank for storing the silicon wafer.
The invention has the advantages that:
by adopting the method, the surface of the polished wafer with better hydrophilicity can be obtained, so that the surface particle level of the polished silicon wafer after RCA cleaning is improved.
Detailed Description
The present invention is further illustrated by the following examples, but the embodiments of the present invention are not limited thereto.
The processing method of the polished silicon wafer comprises a rough polishing step, a middle polishing step and a fine polishing step; the rough polishing step, the middle polishing step and the fine polishing step are respectively carried out according to four stages, wherein the polishing solution is adopted for polishing from the first stage to the third stage, and pure water is adopted for polishing in the fourth stage. After the finish polishing step is completed, the polished silicon wafer is immediately immersed in pure water containing a surfactant.
Wherein, the polishing liquid in the first stage to the third stage of the rough polishing step can adopt SiO with the average grain diameter of 20-200nm as the grinding agent2As the alkaline polishing liquid for particles, for example, polishing liquids having brands of Nalco 2371, Nalco 2354, Nalco 2358, SP2000, Shenzhenlyn 5050 and the like are commercially available. The abrasive used in the middle polishing step and the fine polishing step may be selected from any one of Glanzox3950, Glanzox3900, and NP 8040W, LS-10 from Nitta Haas Electronics Materials Corp, which are manufactured by Fujimi Corp, Japan. The polishing cloth used in the polishing step may be one selected from UR-100 of Nitta Haas Electronics Materials Corp, Politex, and CIEGAL7355 of Kyowa Kabushiki Co., Ltd. The surfactant can be selected from FA/O surfactant developed by microelectronic research institute of Hebei university of industry, Wako Pure Chemical Industries Ltd NCW1001 and 1002, and Jiangyun Chemical reagent factory Co., Ltd 3F.
SiO in fine polishing solution NP 8040W2The solid content of (A) is 6.5-8.5%, and the fine polishing solution SiO used in this example2The solids content of (A) was 7.6%. SiO in NP 8040W polishing solution2The average particle diameter of the particles is 60 to 80nm, and SiO in the fine polishing solution used in this example2The average particle size of the particles was 69.6 nm.
SiO in 5050 polishing liquid2The solid content of (A) is 30-40%, and the fine polishing solution SiO used in this example2The solids content of (A) was 33%. SiO in 5050 polishing liquid2The average particle size of the particles was 50 to 120nm, and SiO in the polishing slurry used in this example2The average particle size of the particles was 114.3 nm.
Example (b): wax polishing process for 8-inch 725 mu m thick arsenic-doped silicon wafer
An experimental silicon wafer: 8 inch straight pulled acid etched wafer: the model and the crystal orientation N <111 >; resistivity: 0.002-0.005 ohm cm; thickness: 740 mu m; quantity: 40 pieces.
Processing equipment: the device comprises a single-side polishing machine, a wax chip mounter, a chip reversing machine, a chip sorting machine, a pre-chip mounting cleaning machine, a polishing chip megasonic cleaning machine, a polishing chip surface particle tester SP1 and the like.
Auxiliary materials: liquid wax, a ceramic disc, polishing solution, rough polishing cloth, middle polishing cloth, fine polishing cloth, hydrogen peroxide, ammonia water, hydrochloric acid, IPA, PFA flower basket, a nylon brush disc, pure water (the resistivity is more than 18M omega cm) and the like.
If the polishing cloth is a newly attached fine polishing cloth, the fine polishing cloth needs to be activated before a polishing product is used. The activation treatment in this example comprises the following steps: preparing a fine polishing solution according to the volume ratio of NP 8040W to pure water of 1: 60, polishing the fine polishing solution on a polishing cloth, brushing the fine polishing cloth by using a nylon brush disc, controlling the rotating speed of a large disc and a polishing head of a polishing machine to be 35rpm during brushing, controlling the brushing time of the fine polishing solution to be about 60min, closing the fine polishing solution, and brushing the cloth by using the pure water for 2 min.
Adding proper amounts of pure water and FA/O surfactant into a silicon wafer storage water tank, wherein the volume ratio of the FA/O surfactant to the pure water is 1: 300, and the water temperature in the water tank is controlled to be about 18 ℃.
The silicon chip is cleaned before being pasted by a cleaning machine before being pasted, the basket with the silicon chip to be polished is placed on a material loading platform of a chip mounter, wax is automatically sprayed on the back of the silicon chip by the chip mounter and is attached to a ceramic disc, and after the pasting is finished, the ceramic disc is automatically conveyed to a polishing machine by a ceramic plate conveying unit.
Setting polishing process parameters:
1. rough polishing: using a rough polishing machine, and carrying out rough polishing twice by using the rough polishing machine-1 and the rough polishing machine-2 in sequence, wherein the rough polishing light is divided into four stages each time to set process parameters:
| rough polishing | Polishing time | Polishing pressure (kPa) | Polishing liquid/pure water | Polishing solution flow (L/min) |
| First stage | 15s | 90 | Polishing liquid | 9.5 |
| Second stage | 12min | 330 | Polishing liquid | 9.5 |
| The third stage | 1min | 150 | Polishing liquid | 9.5 |
| Fourth stage | 120s | 70 | Pure water | 13 |
The polishing solution used in the first stage to the third stage is prepared from Shenzhenli powder 5050 and pure water in a volume ratio of 1: 13, the temperature in the polishing process is controlled to be 26-40 ℃, and Nitta Haas Electronics Materials Corp SUBA600 is selected as the rough polishing cloth.
2. Middle polishing: setting technological parameters in four stages of middle polishing:
wherein, the polishing solution used in the first stage to the third stage is prepared by NP 8040W and pure water according to the volume ratio of 1: 60, the temperature of each stage of the middle polishing process is controlled to be 25-35 ℃, and the middle polishing cloth is Nitta Haas Electronics Materials Corp SUBA 400.
3. Fine polishing: setting technological parameters in four stages of fine polishing:
wherein, the polishing solution used in the first stage to the third stage is prepared by NP 8040W and pure water according to the volume ratio of 1: 60, the temperature of each stage of the fine polishing process is controlled to be 17-30 ℃, and CIEGAL7355 of Kyowa Kabushiki Kaisha is adopted for fine polishing.
And (3) polishing: and sequentially carrying out three steps of rough polishing, middle polishing and fine polishing. And after polishing is finished, the polishing machine chip unloading device automatically unloads the chips. Whether the front surface of the polished wafer is hydrophilic or not can be visually observed in the wafer unloading process, the hydrophilicity of the front surface of each silicon wafer is recorded, and the actual hydrophilicity index of the surface of the 8-inch heavily arsenic-doped polished silicon wafer is shown in table 1. The results of this test indicate that hydrophilic surfaces can be obtained by this method.
TABLE 18 inch actual hydrophilicity index of heavily arsenic-doped polished silicon wafer surface
| Position of | Number of hydrophilic sheets | Number of non-hydrophilic sheets | Proportion of surface hydrophilicity |
| Middle region of silicon wafer | 40 | 0 | 100％ |
| Edge region of silicon wafer | 40 | 0 | 100％ |
And (4) taking down the PFA flower basket filled with the polished wafer after the wafer unloading is finished, immediately putting the polished silicon wafer into a prepared storage water tank (containing a surfactant), and soaking for 5 min.
Sequentially carrying out wax removal cleaning and final cleaning on two baskets of silicon wafers, pouring the silicon wafers into a factory packaging box by using a wafer reversing machine, sorting a reference surface by using a wafer sorting machine, and finally carrying out particle testing on 40 silicon wafers by using a polished wafer surface particle tester SP1, wherein the actual index of the 8-inch arsenic-heavily-doped polished silicon wafer surface particle (LPD) is shown in Table 2. The detection result shows that the method can obtain the large-diameter polished silicon wafer with high quality.
Table 28 inch arsenic heavily doped polished silicon wafer particle actual index
| Average number of particles (LPD) of not less than 0.12 μm | 2.63 |
| Average number of particles (LPD) of not less than 0.16 μm | 1.14 |
| Average number of particles (LPD) of not less than 0.2 μm | 0.61 |
The polishing machines adopted in the polishing process are all universal equipment in the industry.
Claims (6)
1. A processing method for obtaining a polished silicon wafer with a hydrophilic surface is characterized by comprising the process of carrying out chemical mechanical polishing treatment on the silicon wafer by using polishing cloth and polishing liquid, wherein the process comprises a rough polishing step, a middle polishing step and a fine polishing step; the rough polishing step, the middle polishing step and the fine polishing step are respectively carried out according to four stages, wherein polishing liquid is adopted for polishing from the first stage to the third stage, and pure water is adopted for polishing in the fourth stage; the grinding agent used in the middle polishing step and the fine polishing step is SiO with the average grain diameter of 3-80nm2Diluting colloidal polishing stock solution with pure water in a particle alkaline polishing solution and a dilution ratio of 1: 20-100; the polishing time of the fourth stage of the fine polishing step is controlled to be 0-15 s; after finishing the fine polishing step, soaking the polished silicon wafer into pure water containing 0.02-1% of surfactant.
2. The method of processing a polished silicon wafer having a hydrophilic surface according to claim 1, wherein the abrasives used in the middle polishing step and the finish polishing step contain a water-soluble cellulose having a molecular weight of 400,000 or more and an alkaline compound of ammonia.
3. The method of claim 1The processing method for obtaining the polished silicon wafer with the hydrophilic surface is characterized in that in the middle polishing step, the flow rate of polishing solution is 4-10L/min; the polishing pressure of the second stage is controlled at 150-250g/cm2The rotation speed of a large disc and a polishing head of the second-stage polishing machine is controlled to be 30-50rpm, and the polishing time of the second stage is controlled to be 3-12 min; the polishing time of pure water in the fourth stage is 0.5-2min, and the flow rate of the pure water is 4-15L/min.
4. The method for processing a polished silicon wafer to obtain a hydrophilic surface according to claim 1, wherein the fine polishing cloth used in the fine polishing step is subjected to an activation treatment before use, the activation treatment being: polishing liquid adopted in the fine polishing step is applied to polishing cloth, a nylon brush disc is used for brushing the fine polishing cloth, the rotating speed of a large disc of a polishing machine and the rotating speed of a polishing head are controlled to be 15-40rpm during brushing, the brushing time of the polishing liquid is controlled to be 10-120min, the polishing liquid is closed, and the fine polishing cloth can be activated after brushing is carried out for 2min by pure water.
5. The method for processing a polished silicon wafer to obtain a hydrophilic surface according to claim 1, wherein the temperature of each stage of the finish polishing step is controlled to 17 to 30 ℃, the rotation speed of the large plate of the polishing machine and the rotation speed of the polishing head are controlled to 15 to 40rpm, and the polishing pressure of the second stage is controlled to 50 to 150g/cm2。
6. The method for processing a polished silicon wafer having a hydrophilic surface according to claim 1, wherein the polished silicon wafer is immersed in pure water containing a surfactant for a time of more than 2min at a temperature of 13 to 23 ℃ immediately after the finish polishing step.
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Cited By (5)
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| CN111890132A (en) * | 2020-08-06 | 2020-11-06 | 中国电子科技集团公司第四十六研究所 | Process for realizing three-step polishing of large-size silicon wafer for MEMS (micro-electromechanical systems) on single polishing machine |
| CN112372509A (en) * | 2020-11-11 | 2021-02-19 | 西安奕斯伟硅片技术有限公司 | Method and apparatus for changing initial state of polishing pad to hydrophilicity |
| CN115160934A (en) * | 2022-07-29 | 2022-10-11 | 江苏山水半导体科技有限公司 | Super-hydrophilic large-size silicon fine polishing solution and preparation and application methods thereof |
| CN115851138A (en) * | 2022-12-23 | 2023-03-28 | 博力思(天津)电子科技有限公司 | Silicon fine polishing liquid capable of reducing contamination of particles on surface of silicon wafer |
| CN115895451A (en) * | 2021-09-30 | 2023-04-04 | 昆山欣谷微电子材料有限公司 | Alkaline polishing solution composition for preparing hydrophilic surface silicon wafer |
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| CN111890132A (en) * | 2020-08-06 | 2020-11-06 | 中国电子科技集团公司第四十六研究所 | Process for realizing three-step polishing of large-size silicon wafer for MEMS (micro-electromechanical systems) on single polishing machine |
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| CN115895451A (en) * | 2021-09-30 | 2023-04-04 | 昆山欣谷微电子材料有限公司 | Alkaline polishing solution composition for preparing hydrophilic surface silicon wafer |
| CN115160934A (en) * | 2022-07-29 | 2022-10-11 | 江苏山水半导体科技有限公司 | Super-hydrophilic large-size silicon fine polishing solution and preparation and application methods thereof |
| CN115160934B (en) * | 2022-07-29 | 2023-08-25 | 江苏山水半导体科技有限公司 | Super-hydrophilic large-size silicon fine polishing liquid and preparation and use methods thereof |
| CN115851138A (en) * | 2022-12-23 | 2023-03-28 | 博力思(天津)电子科技有限公司 | Silicon fine polishing liquid capable of reducing contamination of particles on surface of silicon wafer |
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