CN115160934B - Super-hydrophilic large-size silicon fine polishing liquid and preparation and use methods thereof - Google Patents
Super-hydrophilic large-size silicon fine polishing liquid and preparation and use methods thereof Download PDFInfo
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- CN115160934B CN115160934B CN202210906319.5A CN202210906319A CN115160934B CN 115160934 B CN115160934 B CN 115160934B CN 202210906319 A CN202210906319 A CN 202210906319A CN 115160934 B CN115160934 B CN 115160934B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- 238000005498 polishing Methods 0.000 title claims abstract description 35
- 239000007788 liquid Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title abstract description 10
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000004094 surface-active agent Substances 0.000 claims abstract description 15
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 239000002270 dispersing agent Substances 0.000 claims description 7
- 239000003995 emulsifying agent Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 239000002562 thickening agent Substances 0.000 claims description 7
- 239000013530 defoamer Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 229920002582 Polyethylene Glycol 600 Polymers 0.000 claims description 2
- 239000002518 antifoaming agent Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 2
- -1 penetrant Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 19
- 239000008367 deionised water Substances 0.000 abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 3
- 239000003082 abrasive agent Substances 0.000 abstract description 2
- 230000003670 easy-to-clean Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000010186 staining Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 9
- 238000011109 contamination Methods 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 7
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 6
- 229940051841 polyoxyethylene ether Drugs 0.000 description 4
- 229920000056 polyoxyethylene ether Polymers 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 3
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002191 fatty alcohols Chemical class 0.000 description 3
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 3
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 description 2
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 description 2
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 description 2
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000847 nonoxynol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JCTXKRPTIMZBJT-UHFFFAOYSA-N 2,2,4-trimethylpentane-1,3-diol Chemical compound CC(C)C(O)C(C)(C)CO JCTXKRPTIMZBJT-UHFFFAOYSA-N 0.000 description 1
- JYCQQPHGFMYQCF-UHFFFAOYSA-N 4-tert-Octylphenol monoethoxylate Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCO)C=C1 JYCQQPHGFMYQCF-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 229920002565 Polyethylene Glycol 400 Polymers 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229940068918 polyethylene glycol 400 Drugs 0.000 description 1
- 229940057847 polyethylene glycol 600 Drugs 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the field of chemical mechanical polishing, in particular to super-hydrophilic large-size silicon fine polishing liquid and a preparation method and a use method thereof. The polishing solution contains nano silica sol, a surfactant, a pH regulator and water; the weight percentage of each component is as follows: 8-12% of alkaline nano silica sol, 1.77-7.60% of surfactant, 0.4-2.5% of pH regulator and the balance of deionized water; the silicon fine polishing liquid has the advantages that: the method is suitable for fine polishing of large-size silicon surfaces, and ultra-hydrophilic silicon surfaces can be obtained after CMP, so that particles such as abrasive materials and the like stained on the silicon surfaces are easy to clean and remove, the problem of surface particle staining is solved, scratch-free surfaces are obtained, and the precision requirements of the microelectronics industry are met.
Description
Technical Field
The invention relates to the field of chemical mechanical polishing, in particular to super-hydrophilic large-size silicon fine polishing liquid and a preparation method and a use method thereof.
Background
With the rapid development of the integrated circuit industry, the requirements of the IC manufacturing process for planarization of the surface of a semiconductor silicon wafer are increasing. Chemical Mechanical Polishing (CMP) is currently the only technology capable of global planarization and is widely used in the semiconductor field. In order to meet the higher surface quality requirements of silicon wafers after CMP, three polishing steps are generally adopted: rough polishing, medium polishing and fine polishing. The geometric surface type of the silicon wafer is determined through rough polishing and medium polishing processes, and after the surface with high flatness and no fog defect, corrosion and scratch is obtained, the surface of the silicon wafer is required to be polished finely to obtain extremely low surface roughness, and the defects such as particle contamination and the like on the surface of the silicon wafer are removed. If the particle contamination problem on the surface of the silicon wafer is not solved, various other defects can be caused, for example, in the ion implantation process, the foreign particles can block doped ions to be implanted, and an incomplete implantation interface is caused, which can directly influence the performance of an electronic device and reduce the yield and the efficiency of the silicon wafer production. Aiming at the problem, it is important to develop a polishing solution which can obtain the super-hydrophilic surface after CMP and is suitable for large-size silicon.
Disclosure of Invention
In order to further reduce the surface roughness of the silicon wafer and solve the problem of surface particle contamination after the silicon wafer CMP, the invention provides the super-hydrophilic large-size silicon fine polishing liquid which contains nano silica sol, a surfactant, a pH regulator and water; the weight percentage of each component is as follows: 8-12% of alkaline nano silica sol, 1.77-7.60% of surfactant, 0.4-2.5% of pH regulator and the balance of deionized water;
wherein the surfactant at least comprises an antifoaming agent, a penetrating agent and a dispersing agent;
further, the paint also comprises an emulsifying agent and a film forming agent;
further, the particle size range of the alkaline nano silica sol is 40-60nm, and the concentration range is 8-12%.
Further, the defoamer in the surfactant is a silicone defoamer (SXP).
Further, the concentration of the organosilicon defoamer is in the range of 0.03-1.50%.
Further, the penetrating agent in the surfactant comprises one or more of JFCE, JFCM, fatty alcohol polyoxyethylene ether 3 (AEO 3), fatty alcohol polyoxyethylene ether 7 (AEO 7), fatty alcohol polyoxyethylene ether 9 (AEO 9) and isomeric deca alcohol polyoxyethylene ether (XP-90).
Further, the concentration of the penetrating agent is in the range of 0.3-3.0%.
Further, the dispersing agent in the surfactant comprises one or more of polyethylene glycol 400 (PEG 400), polyethylene glycol 600 (PEG 600), polyvinylpyrrolidone (PVP) and polyvinyl alcohol (PVA).
Further, the dispersant concentration range is 0.4-0.8%.
Further, the emulsifier in the surfactant comprises one or more of alkylphenol ethoxylate 10 (TX-10), nonylphenol ethoxylate 10 (NP-10), nonylphenol ethoxylate 15 (NP-15) and octylphenol ethoxylate 10 (OP-10).
Further, the emulsifier concentration is in the range of 1.0-2.0%.
Further, the film forming agent in the surfactant comprises one or more of ethylene glycol phenyl Ether (EPH) and 2, 4-trimethyl-1, 3-pentanediol monoisobutyrate (CS-12).
Further, the film forming agent concentration range is 0.03-0.20%.
Further, the thickener in the surfactant includes one or more of polyurethane thickener, hydroxyethyl cellulose (HEC), hydroxypropyl methylcellulose (HPMC), cationic hydroxyethyl cellulose (JR 400).
Further, the thickener concentration range is 0.01-0.10%.
Further, the pH regulator is one or more of ammonia water, tetramethyl ammonium hydroxide (TMAH), citric acid, lactic acid and glycine.
Further, the pH value of the polishing solution is controlled to be 9-11.
Further, the composition comprises the following components in parts by weight: 51.68% of alkaline nano silica sol, 1.97% of pH regulator and 1.12% of defoamer; the concentration of the penetrating agent is 1.96%; the concentration of the dispersant is 0.56%; the concentration of the emulsifier is 1.87%; the concentration of the film forming agent is 0.18%, and the balance is deionized water.
Further, the pH regulator is a mixture of ammonia water and TMAH, and the mass ratio is 1.5:0.47; the defoamer is SXP; the penetrating agent is a composition of JPCE, XP-90 and AE03, and the mass ratio is 0.84:0.56:0.56; the dispersant is CS-12 or EPH.
Further, a thickener is included; the thickener is JR400, and the mass ratio is 0.01%.
The invention also comprises a preparation method of the super-hydrophilic large-size silicon fine polishing liquid, which comprises the steps of firstly adding a pH regulator and a surfactant into a certain amount of deionized water in sequence, and uniformly stirring to prepare a premix; and then adding the uniformly stirred premix into the nano silica sol, stirring, flushing the premix tank with the rest deionized water, and pouring into the silica sol to obtain the nano silica sol.
The invention also comprises a use method of the super-hydrophilic large-size silicon fine polishing liquid, wherein the polishing liquid is diluted by deionized water and used, and the dilution ratio of the polishing liquid to the deionized water is 1:30-40.
Compared with the prior art, the invention has the beneficial effects that:
the method is suitable for fine polishing of large-size silicon surfaces, and can obtain super-hydrophilic silicon surfaces after CMP, so that particles such as abrasive materials and the like stained on the silicon surfaces are easy to clean and remove, the problem of surface particle staining is solved, no scratch and extremely low surface roughness are obtained, and the precision requirement of the microelectronics industry is met.
Drawings
Fig. 1 is a schematic view of the surface roughness of silicon after CMP of ultra-hydrophilic large-size silicon fine polishing liquid.
Detailed Description
The advantages of the present invention will be described in detail with reference to the specific embodiments, and it should be noted that any combination of the embodiments or technical features described below may be used to form new embodiments without conflict.
Examples
According to the specific examples and comparative examples, according to the formula shown in Table 1, firstly, respectively adding a pH regulator and different types of surfactants into a certain amount of deionized water in sequence, and uniformly stirring to prepare a premix; and then adding the uniformly stirred premix into the alkaline nano silica sol, stirring, flushing the premix tank with the rest deionized water, and pouring into the silica sol.
TABLE 1 the types and concentrations of the components of the examples and comparative examples
Effect example
The wafers were subjected to CMP, surface roughness, particle contamination detection and contact angle measurement in sequence, respectively, according to the formulations in table 1.
Specific polishing conditions: the polishing machine table was a U300B polishing machine of Hua Haiqing, the pressure was 2.0psi, the rotational speeds of the polishing head and the polishing disk were 87/93rpm, the flow rate of the polishing liquid was 250ml/min, the polishing pad was Politex, and the polishing time was 3min.
Table 2. Polishing rates and static etch rates for different examples and comparative examples versus silicon wafers. Fig. 1 shows a schematic graph of the post-CMP silicon surface roughness for different examples and comparative examples.
It is well known that the compounding of various penetrants can increase the hydrophilicity of the surface after silicon CMP and reduce the roughness of the silicon surface and the particle contamination amount through the comparison of comparative examples 1-3. As can be seen from a comparison of comparative example 3 and examples 1-3, after addition of the penetrant AEO3 and the film former, respectively, on the basis of comparative example 3 (wherein the emulsifier TX-10 helps CS-12 and EPH dissolve in water), the silicon surface can form a more stable hydrophilic film under the action of the penetrant and the film former, the contact angle is further reduced, and the film former CS-12 shows a better film forming effect than EPH. As can be seen from comparison of comparative example 3 with examples 4-5, on the basis of comparative example 3, the penetrant AEO3 and the film forming agent are compounded, and a super-hydrophilic silicon surface can be obtained, wherein the contact angle of the silicon surface is smaller than 10 degrees, the surface roughness is about 0.1nm, the particle contamination number is smaller than 20, and EPH shows a firmer hydrophilic film effect than CS-12.
The fine polishing liquidThe principle of removing particle contamination is as follows: firstly, the strong penetrability of different penetrants is utilized, and SiO is generated in the CMP process 2 The particles have slight displacement with the surface of silicon, and penetrating agents JFCE, XP-90, AEO3 and the like can rapidly enter SiO 2 The contact gap between the particles and the silicon wafer forms a liquid lubrication film, weakens Van der Waals force between the particles and the silicon wafer, and ensures that SiO is formed 2 Particles are easily separated from the silicon surface, thereby reducing the number of particle contamination on the wafer surface; secondly, the film forming property of the film forming agent is utilized to enable the silicon surface to be covered with a layer of hydrophilic film in the CMP process, after CMP to before cleaning, the silicon surface is protected by the layer of hydrophilic film and is in a wet state, and the surface state can prevent SiO 2 The particles remain on the surface of the silicon wafer in a dry state for a long time due to the hydrophobic nature of the silicon surface, resulting in difficulty in removal.
It should be understood that the percentages stated in this invention refer to mass percentages.
The above description of the specific embodiments of the present invention is given by way of illustration only, and the present invention is not limited to the above described specific embodiments. It will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the invention.
Claims (1)
1. The super-hydrophilic large-size silicon fine polishing liquid is characterized by comprising nano silica sol, a surfactant, a pH regulator and the balance of water;
the weight percentage of each component is as follows:
the concentration of the nano silica sol is 51.68%;
the surfactant comprises defoamer, penetrant, dispersant, emulsifier, film forming agent and thickener;
wherein the defoaming agent is SXP, and the concentration is 1.12%;
the penetrating agent is a mixture of JFCE, XP-90 and AEO3, wherein the concentration of JFCE is 0.84%, the concentration of XP-90 is 0.56% and the concentration of AEO3 is 0.56%;
the dispersing agent is PEG600, and the concentration is 0.56%;
the emulsifier is TX-10 with the concentration of 1.87%;
the film forming agent is EPH, and the concentration is 0.18%;
the thickener is JR400, and the concentration is 0.01%;
the pH regulator is a mixture of ammonia water and TMAH, the concentration of the ammonia water is 1.50%, and the concentration of the TMAH is 0.47%.
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| CN115851138B (en) * | 2022-12-23 | 2024-06-28 | 博力思(天津)电子科技有限公司 | Silicon fine polishing liquid capable of reducing particle contamination on surface of silicon wafer |
| CN115975510B (en) * | 2022-12-30 | 2023-10-31 | 江苏山水半导体科技有限公司 | Preparation method of silicon polishing solution |
| CN116554788B (en) * | 2023-05-06 | 2024-01-23 | 江苏山水半导体科技有限公司 | Fine polishing liquid for reducing particle defects on surface of silicon wafer and preparation and use methods thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08199097A (en) * | 1995-01-28 | 1996-08-06 | Sofuto Kyukyu Corp:Kk | Automotive polish for repairing deteriorated coating film and small flaw |
| CN1887997A (en) * | 2006-06-09 | 2007-01-03 | 河北工业大学 | Polishing liquid with nanometer SiO2 abrasive for SiO2 medium in multilayer wiring of VLSI |
| JP2008041781A (en) * | 2006-08-02 | 2008-02-21 | Fujimi Inc | Composition for polishing, and polishing method |
| CN101671527A (en) * | 2009-09-27 | 2010-03-17 | 大连三达奥克化学股份有限公司 | Copper chemical mechanical polishing solution with high removing rate and low damage, and preparation method thereof |
| CN101870852A (en) * | 2010-06-13 | 2010-10-27 | 北京国瑞升科技有限公司 | Chemical mechanical polishing solution for large-sized silicon wafers and preparation method thereof |
| JP2011142284A (en) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| CN102399483A (en) * | 2011-12-22 | 2012-04-04 | 华南理工大学 | Organic/inorganic composite heat-insulating heat-preserving water-based building coating and preparation method thereof |
| CN108017998A (en) * | 2017-12-19 | 2018-05-11 | 北京创昱科技有限公司 | A kind of preparation method of CMP planarization liquid |
| CN108034360A (en) * | 2017-12-19 | 2018-05-15 | 北京创昱科技有限公司 | A kind of CMP planarization liquid and its application in GaAs wafer polishings |
| CN111251163A (en) * | 2018-11-30 | 2020-06-09 | 有研半导体材料有限公司 | Processing method for polished silicon wafer with hydrophilic surface |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100725803B1 (en) * | 2006-12-05 | 2007-06-08 | 제일모직주식회사 | Slurry compositions for polishing silicone wafer finally and methods for polishing silicone wafer finally by using the same |
| WO2019119816A1 (en) * | 2017-12-19 | 2019-06-27 | 北京创昱科技有限公司 | Cmp polishing solution, preparation method therefor and application thereof |
-
2022
- 2022-07-29 CN CN202210906319.5A patent/CN115160934B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08199097A (en) * | 1995-01-28 | 1996-08-06 | Sofuto Kyukyu Corp:Kk | Automotive polish for repairing deteriorated coating film and small flaw |
| CN1887997A (en) * | 2006-06-09 | 2007-01-03 | 河北工业大学 | Polishing liquid with nanometer SiO2 abrasive for SiO2 medium in multilayer wiring of VLSI |
| JP2008041781A (en) * | 2006-08-02 | 2008-02-21 | Fujimi Inc | Composition for polishing, and polishing method |
| CN101671527A (en) * | 2009-09-27 | 2010-03-17 | 大连三达奥克化学股份有限公司 | Copper chemical mechanical polishing solution with high removing rate and low damage, and preparation method thereof |
| JP2011142284A (en) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| CN101870852A (en) * | 2010-06-13 | 2010-10-27 | 北京国瑞升科技有限公司 | Chemical mechanical polishing solution for large-sized silicon wafers and preparation method thereof |
| CN102399483A (en) * | 2011-12-22 | 2012-04-04 | 华南理工大学 | Organic/inorganic composite heat-insulating heat-preserving water-based building coating and preparation method thereof |
| CN108017998A (en) * | 2017-12-19 | 2018-05-11 | 北京创昱科技有限公司 | A kind of preparation method of CMP planarization liquid |
| CN108034360A (en) * | 2017-12-19 | 2018-05-15 | 北京创昱科技有限公司 | A kind of CMP planarization liquid and its application in GaAs wafer polishings |
| CN111251163A (en) * | 2018-11-30 | 2020-06-09 | 有研半导体材料有限公司 | Processing method for polished silicon wafer with hydrophilic surface |
Non-Patent Citations (1)
| Title |
|---|
| 铜在苯并三唑抛光液中的抛光速率及其影响因素;何捍卫等;《半导体技术》;第27卷(第3期);第68-72页 * |
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| CN115160934A (en) | 2022-10-11 |
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