CN105655240A - Processing method of sapphire wafers - Google Patents
Processing method of sapphire wafers Download PDFInfo
- Publication number
- CN105655240A CN105655240A CN201610205189.7A CN201610205189A CN105655240A CN 105655240 A CN105655240 A CN 105655240A CN 201610205189 A CN201610205189 A CN 201610205189A CN 105655240 A CN105655240 A CN 105655240A
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- CN
- China
- Prior art keywords
- wafer
- processing method
- sapphire
- sapphire wafer
- wet etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a processing method of sapphire wafers. The method comprises the specific process as follows: linear cutting, grinding and chamfering, washing, high-temperature etching, polishing and detection. According to the process, washing is performed after the traditional chamfering process, the cleanliness of the wafers is guaranteed, then high-temperature etching is performed, sulfuric acid and phosphoric acid in the ratio being 6:1-1:6 at the temperature of 150-500 DEG C are used as high-temperature etching solutions, washing and conventional polishing are performed after etching, the process link is shortened, the processing time is saved, the cost is reduced, the production efficiency is improved, stress can be well eliminated, and the surface uniformity of the wafers can be improved.
Description
Technical field
The invention belongs to LED substrate manufacture field, the processing method particularly relating to a kind of sapphire wafer molding.
Background technology
Sapphire wafer is the main backing material making blue-ray LED now. Traditional flow process of sapphire wafer be line cut, grind, chamfering, wash wafer by rubbing with the hands, anneal, wax, copper is thrown, polishing and detection. Due to the about 50 hours time of annealing, serious waste time, and there is the incomplete situation of Stress Release. And need operation and the board of high request at station of waxing, the uniformity of patch wax can be controlled. Throw due to copper again and need to remove thicker sapphire wafer, it is necessary to substantial amounts of Liquid diamond, cause with high costs.
Summary of the invention
For solving above-mentioned tradition sapphire process technology problem, the present invention provides a kind of sapphire wafer Making programme, and this flow process is cut by line, ground, chamfering, wash the flow processs such as wafer, high temperature etching, polishing and detection by rubbing with the hands and form.
Specifically, the processing method of a kind of sapphire wafer disclosed by the invention, including step:
(1) crystal bar is cut, make wafer;
(2) grind thinned wafer, to Waffer edge chamfering, clean wafer;
(3) wafer surface carrying out high temperature wet etching, remove wafer surface and grind injury mark, high temperature plays the effect of releasing wafer internal stress;
(4) specifying wafer one side is work surface, and described work surface is polished processing.
In accordance with the present invention it is preferred that, the temperature of described high temperature wet etching is 150 ~ 500 DEG C.
In accordance with the present invention it is preferred that, the solution of high temperature wet etching is that sulphuric acid or phosphoric acid or the two mix.
In accordance with the present invention it is preferred that, described sulphuric acid is with phosphoric acid mixed liquor, and the ratio of sulphuric acid and phosphoric acid is 6:1 ~ 1:6.
In accordance with the present invention it is preferred that, the removal quantity of wafer is 10 ~ 50 ��m by described wet etching.
In accordance with the present invention it is preferred that, the time of described wet etching is 0.5 ~ 2h.
In accordance with the present invention it is preferred that, described grinding adopts lapping liquid that wafer carries out thinning and chamfering, and described lapping liquid concentration is 0.05 ~ 0.6wt.%.
In accordance with the present invention it is preferred that, described lapping liquid composition is suspending agent plus silicon carbide or boron carbide.
In accordance with the present invention it is preferred that, work surface described in step 4 is the one side of epirelief in wafer two sides, after testing after apparatus measures, selects positive BOW face.
The processing method of the present invention is carried out after traditional chamfering and rubs sheet with the hands, it is ensured that the cleannes of wafer, and subsequently into high temperature etching, the solution of high temperature etching is sulphuric acid and the phosphoric acid of 150 ~ 500 DEG C, after being carried out, then carries out the polishing of routine after etching.The processing method of the present invention effect by high temperature etching, reaches eliminate stress and remove the effect of partial mill damage layer, thus simplifying the operation of entirety.
Accompanying drawing explanation
Accompanying drawing is for providing a further understanding of the present invention, and constitutes a part for description, is used for together with embodiments of the present invention explaining the present invention, is not intended that limitation of the present invention. Additionally, accompanying drawing data are to describe summary, it is not drawn to scale.
Fig. 1 is the process flow diagram of embodiment.
Detailed description of the invention
In order to enable to understand up hill and dale the present invention, detailed step and composition thereof will be proposed in following description, additionally, it is well known that composition or step be not described in details, to avoid the restriction causing the present invention unnecessary. Presently preferred embodiments of the present invention can be described in detail as follows, but except these detailed descriptions, the present invention can also implement in other embodiments widely, and the scope of the present invention is not limited, and is as the criterion with patent right scope.
Embodiment
The present invention proposes a kind of sapphire wafer Making programme and manufacture method, by the effect of high temperature etching, reaches eliminate stress and remove the effect of partial mill damage layer, thus simplifying the operation of entirety.
Technological process as shown in Figure 1, carries out linear incision to wafer, crystal bar is made wafer. for 4 cun of wafers, wafer thickness is 750 ��m, the wafer of well cutting is ground thinning, use being mainly composed of of lapping liquid: suspending agent and carborundum or carborundum, concentration is 0.05 ~ 0.6wt.%, the flow of lapping liquid is 0.5 ~ 4L/min, preferred flow is 1.5L/min, by erratic star wheel, wafer is applied pressure, pressure is 2.5 ~ 8.5kpa, preferred pressure is 5.5kpa, erratic star wheel rotating speed is 5 ~ 40rpm, preferred rotating speed is rotating speed 20rpm, milling time is 5 ~ 30min, milling time is preferably 11min, wafer removal quantity is 25 ~ 40 ��m, preferred removal quantity is 30 ��m, thickness difference between single-wafer is less than 3 ��m.
Use Gypsum Fibrosum rag to stick with liquid detergent wiping wafer surface, remove the residual of grounds travel, improve the effect of subsequent wet etch, be spin-dried for after having cleaned.
Wafer is carried out high temperature wet etching, etching solution is sulphuric acid and the phosphoric acid of 150 ~ 500 DEG C, solution temperature is preferably 280 DEG C, ratio is 6:1 to 1:6, etching period is 0.5 ~ 2h, and etching period is preferably 1h, and etching removal quantity is 10 ~ 50 ��m, etching removal quantity is preferably 18 ��m, in order to the internal stress that complete releasing wafer produces in growth and manufacturing process. After having etched, cleaning is spin-dried for.
Define wafer one side for work surface, by the polishing pad of buffing machine, wafer work surface is polished, wafer is applied pressure, pressure 1.0 ~ 5.5kgf/cm's, rotating speed is 10 ~ 150rpm, and temperature is 25 ~ 60 DEG C, and polishing fluid flow is 2.5 ~ 20L/min, process time is 1.5 ~ 15h, and polishing removal amount is 35 ~ 50 ��m. Finally the wafer made is detected.
The flow process of the present invention not only shortens processing procedure, saves process time, reduces cost, improves the efficiency of production line. And can be good at eliminating stress, improve wafer surface uniformity. According to the high temperature etching technological process of the present invention, residual that wafer is unstressed, compare original technique, process costs about reduces by 20%, and whole working (machining) efficiency about promotes 30%.
Claims (9)
1. a processing method for sapphire wafer, including step:
(1) crystal bar is cut, make wafer;
(2) thinning described wafer is ground;
(3) wafer surface carrying out high temperature wet etching, remove wafer surface and grind injury mark, high temperature plays the effect of releasing wafer stress;
(4) specifying wafer one side is work surface, and described work surface is polished processing.
2. the processing method of a kind of sapphire wafer according to claim 1, it is characterised in that: the temperature of described high temperature wet etching is 150 ~ 500 DEG C.
3. the processing method of a kind of sapphire wafer according to claim 1, it is characterised in that: the solution of high temperature wet etching is that sulphuric acid or phosphoric acid or the two mix.
4. the processing method of a kind of sapphire wafer according to claim 3, it is characterised in that: described sulphuric acid is with phosphoric acid mixed liquor, and the ratio of sulphuric acid and phosphoric acid is 6:1 ~ 1:6.
5. the processing method of a kind of sapphire wafer according to claim 1, it is characterised in that: the removal quantity of wafer is 10 ~ 50 ��m by described wet etching.
6. the processing method of a kind of sapphire wafer according to claim 1 to 5, it is characterised in that: the time of described wet etching is 0.5 ~ 2h.
7. the processing method of a kind of sapphire wafer according to claim 1, it is characterised in that: described grinding adopts lapping liquid to carry out thinning to wafer, and described lapping liquid concentration is 0.05 ~ 0.6wt.%.
8. the processing method of a kind of sapphire wafer according to claim 7, it is characterised in that: described lapping liquid composition comprises carborundum and boron carbide.
9. the processing method of a kind of sapphire wafer according to claim 1, it is characterised in that: work surface described in step 4 is the one side of epirelief in wafer two sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610205189.7A CN105655240A (en) | 2016-04-05 | 2016-04-05 | Processing method of sapphire wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610205189.7A CN105655240A (en) | 2016-04-05 | 2016-04-05 | Processing method of sapphire wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105655240A true CN105655240A (en) | 2016-06-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610205189.7A Pending CN105655240A (en) | 2016-04-05 | 2016-04-05 | Processing method of sapphire wafers |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993936A (en) * | 2017-11-30 | 2018-05-04 | 北京创昱科技有限公司 | Substrate processing method |
| CN112542373A (en) * | 2020-11-05 | 2021-03-23 | 山西中科潞安紫外光电科技有限公司 | Method for improving grinding yield of warped sapphire wafer |
| CN112689886A (en) * | 2020-06-16 | 2021-04-20 | 福建晶安光电有限公司 | Substrate processing method and semiconductor device manufacturing method |
| WO2021253542A1 (en) * | 2020-06-16 | 2021-12-23 | 福建晶安光电有限公司 | Substrate processing method and semiconductor device manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020058418A1 (en) * | 2000-11-11 | 2002-05-16 | Lewis David John | Treatment of substrates |
| CN1833816A (en) * | 2005-11-23 | 2006-09-20 | 周海 | Nano-glass supersmooth processing technique of sapphire crystal sheet |
| CN104493685A (en) * | 2014-01-12 | 2015-04-08 | 孙新利 | Sapphire wafer processing method |
-
2016
- 2016-04-05 CN CN201610205189.7A patent/CN105655240A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020058418A1 (en) * | 2000-11-11 | 2002-05-16 | Lewis David John | Treatment of substrates |
| CN1833816A (en) * | 2005-11-23 | 2006-09-20 | 周海 | Nano-glass supersmooth processing technique of sapphire crystal sheet |
| CN104493685A (en) * | 2014-01-12 | 2015-04-08 | 孙新利 | Sapphire wafer processing method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993936A (en) * | 2017-11-30 | 2018-05-04 | 北京创昱科技有限公司 | Substrate processing method |
| CN112689886A (en) * | 2020-06-16 | 2021-04-20 | 福建晶安光电有限公司 | Substrate processing method and semiconductor device manufacturing method |
| WO2021253542A1 (en) * | 2020-06-16 | 2021-12-23 | 福建晶安光电有限公司 | Substrate processing method and semiconductor device manufacturing method |
| TWI774380B (en) * | 2020-06-16 | 2022-08-11 | 大陸商福建晶安光電有限公司 | Method for processing substrate and method for manufacturing semiconductor element |
| CN112542373A (en) * | 2020-11-05 | 2021-03-23 | 山西中科潞安紫外光电科技有限公司 | Method for improving grinding yield of warped sapphire wafer |
| CN112542373B (en) * | 2020-11-05 | 2023-07-21 | 山西中科潞安紫外光电科技有限公司 | Method for improving grinding yield of warped sapphire wafer |
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Application publication date: 20160608 |
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