CN110314896A - A kind of semiconductor substrate materials polishing method - Google Patents
A kind of semiconductor substrate materials polishing method Download PDFInfo
- Publication number
- CN110314896A CN110314896A CN201910216999.6A CN201910216999A CN110314896A CN 110314896 A CN110314896 A CN 110314896A CN 201910216999 A CN201910216999 A CN 201910216999A CN 110314896 A CN110314896 A CN 110314896A
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- CN
- China
- Prior art keywords
- polishing
- semiconductor substrate
- substrate materials
- laser
- polishing method
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
- B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
Abstract
The present invention relates to a kind of semiconductor substrate materials polishing methods, belong to polishing semiconductor materials technical field.Polishing method of the invention includes: that the semiconductor substrate materials after cutting line carry out laser polishing；Ultrasonic cleaning is carried out to the semiconductor substrate materials after laser polishing, completes laser polishing processing；The semiconductor substrate materials completed using step in chemical mechanical polish process.Polishing method of the invention, laser polishing can efficiently remove surface damage and be formed with the structure and ingredient for being conducive to chemically mechanical polishing removal, simultaneously because laser polishing is that contactless polishing will not generate new mechanical damage, only need can obtain Ultraprecise polished surface in the chemically mechanical polishing of next step within 0.1-5 hours.All procedure of processings of the present invention can be completed in business machine, it is easy to accomplish, there is good application prospect.
Description
Technical field
The present invention relates to a kind of semiconductor substrate materials polishing methods, belong to semiconductor substrate materials polishing technology field,
In particular to a kind of Ultraprecise polished technical field for the difficult process substrate material such as superhard material and fragile material.
Background technique
The processing of conventional semiconductors substrate materials is divided into crystal growth, wire cutting, Precision Machining, cleaning, wherein essence
Close procedure of processing significantly reduces surface stress, thick for the defects of removing damaging layer caused by cutting technique, surface irregularity
Rugosity, to obtain atom level surface.At present Precision Machining include grinding, mechanical polishing, chemically mechanical polishing and etc., processing
Technique is cumbersome.Particularly with the difficult process substrate material such as superhard material and fragile material, can be generated in grinding, mechanical polishing new
Defect not only causes low efficiency, and such as current superhard material silicon carbide chemically mechanical polishing removal rate is only 100nm/h or so (J
Mater Sci:Mater Electron (2013) 24:5040-5047), fragile material material is also easy to produce broken in process
It splits, it is above-mentioned to bring larger challenge to chemically mechanical polishing.
In order to improve efficiency and reduce surface defect, 107346726 A of patent CN first immerses initial substrates piece
Formula removal, is then being processed by shot blasting；107993936 A of patent CN carries out corrosion process to the substrate after slice to remove
The damaging layer generated by slice；Abrasive material is cured in grinding pad damage caused by reduce grinding by patent CN103624675 B,
Simplify substrate processing technology step.It can be seen that efficiency or reduction surface defect can be improved by changing processing method method.
However above-mentioned patent is improved just for a step in substrate processing, does not improve chemical-mechanical polishing rate.
Summary of the invention
It is an object of the invention to overcome deficiency in the prior art, a kind of semiconductor substrate materials polishing side is proposed
Method can remove rapidly surface damage layer, fluctuating etc. without generating new defect using this method, and generate after laser polishing easy
Surface texture, ingredient in chemically mechanical polishing, greatly improve the efficiency of chemically mechanical polishing.This method can change
The procedure of processing of traditional substrate materials: the substrate material after cutting is only needed by two laser polishing, chemically mechanical polishing steps
It can be obtained ultra-precision surface, process time is short, high-efficient.
A kind of semiconductor substrate materials polishing method of the invention, which is characterized in that method includes the following steps:
(a) semiconductor substrate materials after cutting line carry out laser polishing；
(b) ultrasonic cleaning is carried out to the semiconductor substrate materials after laser polishing, completes laser polishing processing；
(c) semiconductor substrate materials completed using chemical mechanical polish process step (b).
The semiconductor substrate materials include sapphire, GaAs, silicon carbide, gallium nitride, diamond, aluminium nitride, nitridation
Indium, silicon, zinc oxide.
Medium used in the ultrasonic cleaning is water or ethyl alcohol, and scavenging period is 1~10 minute.
The laser polishing method includes excimer laser polishing, CO2Laser polishing, YAG laser polishing, nanosecond laser
Any one of polishing, picosecond laser polishing, femtosecond laser polishing.
The speed of the laser scanning is 1mm/s~500mm/s.
The energy density of the laser scanning is 0.01J/cm2~20J/cm2。
The polishing fluid used that chemically-mechanicapolish polishes is alumina polishing solution, cerium oxide polishing slurry, silica polishing fluid
One or more of.
The polishing pad is one or more of polyurethane polishing pad, non-woven fabrics polishing pad, compound polishing pad.
The polishing fluid is one or more of acid, neutral, alkalinity.
Chemically-mechanicapolish polishing used pressure is 50g/cm2~400g/cm2, polishing time is 0.1~5 hour.
The invention has the following advantages over the prior art:
1. reducing the procedure of processing that tradition sinks to the bottom material, the substrate material after cutting is only needed by laser polishing, chemistry
Mechanically polishing two steps can be obtained ultra-precision surface；
2. the laser polishing time is short, it is only necessary to a few minutes to more than ten minutes can remove surface damage layer, fluctuating etc. rapidly and
New defect is not generated；
3. generating the surface texture for being easy to chemically-mechanicapolish polish, ingredient after laser polishing, chemistry can be greatly improved
The efficiency of mechanical polishing；
It is business machine used in 4., polishing process is, easy to operate and easy in commercial polishing machine setting range
In realization；
5. the entire polishing process time is short, only need can polish completion for difficult-to-machine material within 0.1~5 hour；
Detailed description of the invention
Fig. 1 is silicon carbide substrate surface microscope figure after the embodiment of the present invention four polishes.
Fig. 2 is silicon carbide substrate surface microscope figure after comparative example one polishes.
Specific embodiment
In order to which the effect of technical problem solved by the invention and generation is explained further, below in conjunction with specific embodiment pair
The present invention is described in detail.Specific examples are only used to explain the present invention content described herein is not used to limit this
Invention.
Embodiment one
Silicon carbide substrate surface after using IPG company GYLPM type nanosecond laser polish line to cut: laser scanning speed for
1mm/s, laser energy density used are 1J/cm2；After the completion of scanning, it is put in ultrasonic cleaning 5 minutes in ethyl alcohol；It will cleaning
Silicon carbide substrates afterwards are polished using Shenyang Ke Jing company 1000S type polishing machine, alkali alumina polishing fluid, polyurethane polishing pad
3 hours, polish pressure 400g/cm2.Carbofrax material surface condition after being polished after polishing using Leica microscope observation,
It was found that surface damage has completely removed.
Embodiment two
Using Universal company ULR50 type CO2Laser polishing line cut after silicon carbide substrate surface: laser scanning speed
Degree is 250mm/s, and laser energy density used is 0.01J/cm2；After the completion of scanning, it is put in ultrasonic cleaning 1 in ethyl alcohol and divides
Clock；Silicon carbide substrates after cleaning are used into Shenyang Ke Jing company 1000S type polishing machine, basic ceria polishing fluid, compound
Polishing pad polishes 1 hour, polish pressure 100g/cm2.The carbofrax material after Leica microscope observation polishing is utilized after polishing
Surface condition, discovery surface damage have completely removed.
Embodiment three
Silicon carbide substrate surface after being cut using LIGHTCINVERSION company PH1 type femtosecond laser polish line: laser is swept
Retouching speed is 500mm/s, and laser energy density used is 20J/cm2；After the completion of scanning, it is put in ultrasonic cleaning 10 in water and divides
Clock；Silicon carbide substrates after cleaning are used into Shenyang Ke Jing company 1000S type polishing machine, acidic oxidation silicon polishing liquid, polyurethane
Polishing pad polishes 5 hours, polish pressure 300g/cm2.The carbofrax material after Leica microscope observation polishing is utilized after polishing
Surface condition, discovery surface damage have completely removed.
Example IV
Silicon carbide substrate surface after being cut using LIGHTCINVERSION company PH1 type femtosecond laser polish line: laser is swept
Retouching speed is 50mm/s, and laser energy density used is 1J/cm2；After the completion of scanning, it is put in ultrasonic cleaning 10 in ethyl alcohol and divides
Clock；Silicon carbide substrates after cleaning are used into Shenyang Ke Jing company 1000S type polishing machine, alkaline oxygenated silicon polishing liquid, non-woven fabrics
Polishing pad polishes 5 hours, polish pressure 400g/cm2.The carbofrax material after Leica microscope observation polishing is utilized after polishing
Surface condition, discovery surface damage have completely removed.
Embodiment five
Use LIGHTCINVERSION company PH1 type femtosecond laser polishing diamond substrate surface: laser scanning speed for
200mm/s, laser energy density used are 10J/cm2；After the completion of scanning, it is put in ultrasonic cleaning 5 minutes in ethyl alcohol；It will be clear
Silicon carbide substrates after washing are thrown using Shenyang Ke Jing company 1000S type polishing machine, acidic oxidation silicon polishing liquid, polyurethane polishing pad
Light 3 hours, polish pressure 400g/cm2.The carbofrax material surface feelings after Leica microscope observation polishing are utilized after polishing
Condition, discovery surface damage have completely removed.
Embodiment six
Use LIGHTCINVERSION company PH1 type femtosecond laser polish zinc oxide substrate surface: laser scanning speed for
300mm/s, laser energy density used are 0.05J/cm2；After the completion of scanning, it is put in ultrasonic cleaning 1 minute in ethyl alcohol；It will
Silicon carbide substrates after cleaning use Shenyang Ke Jing company 1000S type polishing machine, neutral alumina silicon polishing liquid, compound polishing pad
Polishing 0.1 hour, polish pressure 50g/cm2.The carbofrax material surface after Leica microscope observation polishing is utilized after polishing
Situation, discovery surface damage have completely removed.
Comparative example one
Silicon carbide substrates piece after line is cut traditionally is processed: being ground first using diamond grinding fluid to it
It grinds to remove the tool marks of substrate material surface, grinding found that surface tool marks have completely removed after 30 minutes under the microscope, but
It is to generate more deep scuffing；Substrate material after grinding is used into Shenyang Ke Jing company 1000S type polishing machine, alkali alumina
Polishing fluid polishes 3 hours according to the chemically mechanical polishing condition in embodiment one, and observation finds substrate material table under the microscope
Face scratches and obviously shoals and reduce；Substrate material after alumina polishing solution is polished is thrown according to the chemical machinery in example IV
Striation part polishes 5 hours, and observation discovery substrate material surface still has scuffing under the microscope.
Comparative example two
Silicon carbide substrates piece after line is cut was polished according to the chemically mechanical polishing condition in example IV, every 1 hour
One-time surface is observed under the microscope, finds the defects of surface still has stria, pit after polishing 10 hours.
Claims (10)
1. a kind of semiconductor substrate materials polishing method, which is characterized in that method includes the following steps:
(a) semiconductor substrate materials after cutting line carry out laser polishing；
(b) ultrasonic cleaning is carried out to the semiconductor substrate materials after laser polishing, completes laser polishing processing；
(c) semiconductor substrate materials completed using chemical mechanical polish process step (b).
2. semiconductor substrate materials polishing method according to claim 1, which is characterized in that the semiconductor substrate materials
Including sapphire, GaAs, silicon carbide, gallium nitride, diamond, aluminium nitride, indium nitride, silicon, zinc oxide.
3. semiconductor substrate materials polishing method according to claim 1, which is characterized in that used in the ultrasonic cleaning
Medium be water or ethyl alcohol, scavenging period be 1~10 minute.
4. semiconductor substrate materials polishing method according to claim 1 or 2, which is characterized in that the laser polishing
Method includes excimer laser polishing, CO2Laser polishing, YAG laser polishing, nanosecond laser polishing, picosecond laser polishing, femtosecond
Any one of laser polishing.
5. semiconductor substrate materials polishing method according to claim 1 or 4, which is characterized in that the laser scanning
Speed be 1mm/s~500mm/s.
6. semiconductor substrate materials polishing method according to claim 1 or 4, which is characterized in that the laser scanning
Energy density be 0.01J/cm2~20J/cm2。
7. semiconductor substrate materials polishing method according to claim 1, which is characterized in that the chemically mechanical polishing makes
Polishing fluid is one or more of alumina polishing solution, cerium oxide polishing slurry, silica polishing fluid.
8. semiconductor substrate materials polishing method according to claim 1, which is characterized in that the polishing pad is polyurethane
One or more of polishing pad, non-woven fabrics polishing pad, compound polishing pad.
9. semiconductor substrate materials polishing method according to claim 8, which is characterized in that the polishing fluid be it is acid,
One or more of neutral, alkalinity.
10. semiconductor substrate materials polishing method according to claim 8, which is characterized in that chemically mechanical polishing is made
It is 50g/cm with pressure2~400g/cm2, polishing time is 0.1~5 hour.
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| CN201910216999.6A CN110314896A (en) | 2019-03-21 | 2019-03-21 | A kind of semiconductor substrate materials polishing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111716005A (en) * | 2020-06-19 | 2020-09-29 | 西安交通大学 | Method for polishing ceramic matrix composite material by ultrasonic-assisted laser |
| CN112216602A (en) * | 2020-10-22 | 2021-01-12 | 中国电子科技集团公司第四十六研究所 | Polishing method for indium antimonide single crystal wafer |
| CN113053723A (en) * | 2019-12-26 | 2021-06-29 | 苏州富怡达超声波有限公司 | Method and device for cleaning wafer based on ultrasonic-plasma combination |
| CN113352230A (en) * | 2021-06-17 | 2021-09-07 | 广东工业大学 | Diamond wafer ultra-precision machining method and device |
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| CN105026625A (en) * | 2013-02-08 | 2015-11-04 | 并木精密宝石株式会社 | GaN substrate and method for manufacturing GaN substrate |
| CN106601607A (en) * | 2016-12-16 | 2017-04-26 | 镓特半导体科技（上海）有限公司 | Laser-assisted chemically mechanical polishing method for gallium nitride crystal |
| CN108321275A (en) * | 2018-01-25 | 2018-07-24 | 山东师范大学 | High light extraction LED chip of a kind of wideband with class optical grating construction and preparation method thereof |
| CN108766876A (en) * | 2018-05-08 | 2018-11-06 | 中国科学院上海光学精密机械研究所 | A kind of preparation method of on piece high quality thin film micro optical structure |
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Patent Citations (5)
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| CN105026625A (en) * | 2013-02-08 | 2015-11-04 | 并木精密宝石株式会社 | GaN substrate and method for manufacturing GaN substrate |
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| CN108321275A (en) * | 2018-01-25 | 2018-07-24 | 山东师范大学 | High light extraction LED chip of a kind of wideband with class optical grating construction and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113053723A (en) * | 2019-12-26 | 2021-06-29 | 苏州富怡达超声波有限公司 | Method and device for cleaning wafer based on ultrasonic-plasma combination |
| CN111716005A (en) * | 2020-06-19 | 2020-09-29 | 西安交通大学 | Method for polishing ceramic matrix composite material by ultrasonic-assisted laser |
| CN112216602A (en) * | 2020-10-22 | 2021-01-12 | 中国电子科技集团公司第四十六研究所 | Polishing method for indium antimonide single crystal wafer |
| CN113352230A (en) * | 2021-06-17 | 2021-09-07 | 广东工业大学 | Diamond wafer ultra-precision machining method and device |
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Application publication date: 20191011 |