CN108321275A - High light extraction LED chip of a kind of wideband with class optical grating construction and preparation method thereof - Google Patents
High light extraction LED chip of a kind of wideband with class optical grating construction and preparation method thereof Download PDFInfo
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- CN108321275A CN108321275A CN201810074158.1A CN201810074158A CN108321275A CN 108321275 A CN108321275 A CN 108321275A CN 201810074158 A CN201810074158 A CN 201810074158A CN 108321275 A CN108321275 A CN 108321275A
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- optical grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Abstract
The invention discloses a kind of high light extraction LED chips of the wideband with class optical grating construction and preparation method thereof, establish the two-dimensional cross sectional figure of class optical grating construction；The dimension cross-sectional view that two class optical grating constructions are stretched along Z axis, is transformed into three-dimensional class optical grating construction, and establish three-dimensional LED chip model, and the light sent out using Finite-Difference Time-Domain Method simulation multiple quantum well layer calculates light extraction efficiency in LED chip internal communication situation；Optimize the parameter of class optical grating construction；Sapphire Substrate, and light emitting epitaxial layer successively on substrate are made, epitaxial wafer is made, in one layer of metallic film of grown on top of p-type semiconductor layer, as speculum and p-contact electrode, epitaxial wafer is welded on heat sink using eutectic soldering method；Sapphire Substrate is peeled off using laser substrate desquamation method, and reduction processing is carried out to n-type semiconductor layer using cmp method；According to the parameter of the class optical grating construction after optimization, class optical grating construction is made on the n-type semiconductor layer.
Description
Technical field
The present invention relates to LED technology fields, and in particular to a kind of wideband highlight extract efficiency with class optical grating construction
LED chip and preparation method thereof.
Background technology
Compared with conventional light source, GaN base LED is in addition to (being 10 times of halogen lamp, fluorescence with high photoelectric conversion efficiency
2 times of lamp) except, also have many advantages, such as small, long lifespan, reliability height, fast response time, becomes new generation of green photograph
The ideal chose in Mingguang City source.The positive assembling structure LED of traditional Sapphire Substrate leads to part from p-type semiconductor overhead radiation photon
Photon is absorbed by p-contact electrode, and there is also serious current crowding and fever phenomenons under Bulk current injection.It is solid in order to meet
The needs of state illumination, a kind of film inverted structure chip fabrication techniques are come into being.This kind of technology is first with laser lift-off skill
Art peels off Sapphire Substrate, then increases by one layer of metallic mirror in p-type semiconductor, and chip is welded to high heat conduction
On heat sink, luminous efficiency can also be improved while solving heat dissipation problem in this way.But not high (the flat thin of light extraction efficiency
The light extraction efficiency of film flip LED be about 30%) be still to limit its key factor applied in lighting area.
From the point of view of optics aspect, LED chip is a Multilayer waveguide, and the wide part that multiple quantum wells is sent out can be
GaN and Air Interface are totally reflected, and are limited in the inside of LED in the form of guided mode, are by LED sorption enhanceds eventually
Thermal energy, this will certainly cause steeply rising for LED chip temperature, excessively high junction temperature that can not only further decrease the interior quantum of LED
Efficiency can also influence its launch wavelength and accelerate the aging etc. of encapsulating material, or even cause the damage of device.In order to improve
The light extraction efficiency of LED, the various technologies for making surface micro-nano structure (light extraction structures) are suggested, and include mainly roughing in surface
Technology and photonic crystal technology etc..Although surface texture technology can effectively improve the light extraction efficiency (about 65%) of LED,
Its with certain randomness, and to the directionality of emergent light control it is bad, cause generate lambertian radiation pattern.Compare and
Speech, 2 D photon crystal technology have better directionality and higher light extraction efficiency.Photonic crystal spreads out as a binary
Grating is penetrated, diffraction is all very to the direction of propagation of guided mode in the radiation wavelength of LED, the period of photonic crystal and LED
Sensitive, it is difficult with a determining photon crystal structure and realizes effective light extraction in wideband.
Invention content
In order to overcome the above-mentioned deficiencies of the prior art, the present invention provides a kind of LED chip with class optical grating construction and
Its production method is designed and optimizes to the class optical grating construction being made of n-type semiconductor using Finite-Difference Time-Domain Method,
Make the light extraction efficiency of LED chip obtain substantially enhancing in wideband, the extraction efficiency of 450nm blue lights is made to enhance 2.55
Times, reach 1.1 times of triangular crystal lattice photonic crystal LED light extraction efficiency.
The technical solution adopted in the present invention is：
A kind of high light extraction LED chip of wideband with class optical grating construction, which includes n-type semiconductor layer, volume
Sub- well layer, p-type semiconductor layer and metallic reflector；N-type semiconductor layer is grown on Sapphire Substrate, and multiple quantum well layer is grown
On n-type semiconductor layer, p-type semiconductor layer is grown on multiple quantum well layer, and one layer of metal is grown in p-type semiconductor layer
Film, as metallic reflector；After removing Sapphire Substrate, a class optical grating construction is set on the n-type semiconductor layer.
Further, the depth of the class optical grating construction is 200-300nm, average period 350-450nm, the period half is high
Width is 170nm-250nm, and duty ratio 0.4-0.6, total semiconductor thickness is 400-1000nm.
Further, the metallic film is silverskin.
The production method of the high light extraction LED chip of wideband with class optical grating construction, includes the following steps：
(1) the two-dimensional cross sectional figure of class optical grating construction is established；
(2) the dimension cross-sectional view that two class optical grating constructions are stretched along Z axis, is transformed into three-dimensional class optical grating construction, and establish
LED chip model, the light sent out using Finite-Difference Time-Domain Method simulation multiple quantum well layer is in LED chip internal communication situation, meter
Calculate light extraction efficiency；
(3) optimize the parameter of class optical grating construction；
(4) Sapphire Substrate is made, and grows light emitting epitaxial layer successively on substrate, epitaxial wafer is made, in p-type semiconductor
Epitaxial wafer is welded to heat by one layer of metallic film of grown on top of layer as speculum and p-contact electrode using eutectic soldering method
On heavy；
(5) Sapphire Substrate is peeled off using laser substrate desquamation method, is used in combination cmp method to N-shaped half
Conductor layer carries out reduction processing；
(6) according to the parameter of the class optical grating construction after optimization, class optical grating construction is made on the n-type semiconductor layer.
Further, the cross-sectional view for making class optical grating construction, including：
Establish the plural random matrix for obeying Two dimension normal distribution；
The plural random matrix of Two dimension normal distribution is filtered using Gaussian annular shape filter, obtains class grating
The spatial spectral distribution figure in period；
Two-dimensional Fourier transform is carried out to graph of spatial frequency spectrum and obtains a complex matrix；
Real value and dualization processing are carried out to complex matrix, obtain the two-dimensional cross sectional figure of class optical grating construction.
Further, the specific method of the construction LED chip model is：
Successively to metallic reflector, p-type semiconductor layer, multiple quantum well layer, N-shaped in Finite-Difference Time-Domain Method simulation software
The three-dimensional geometrical structure of semiconductor layer and class optical grating construction is modeled, and the refractive index and light of each layer of constituent material is respectively set
Absorption coefficient parameter, obtain a three-dimensional LED chip model.
Further, the parameter of the optimization class optical grating construction, including：
Processing is optimized to the parameter of class optical grating construction using Finite-Difference Time-Domain Method, obtains optimal structural parameters,
Wherein, the parameter of the class optical grating construction includes depth d, a average period0, the period halfwidth Δ a0With duty ratio f and always
Layer semiconductor thickness t.
Further, according to the parameter of the class optical grating construction after optimization, class optical grating construction is made on the n-type semiconductor layer,
Including：
According to the depth d of the optical grating construction after optimization, a average period0, the period halfwidth Δ a0With duty ratio f and always
Layer semiconductor thickness t parameter makes class grating knot on the n-type semiconductor layer using dry etching method or nano-imprinting method
Structure.
Compared with prior art, the beneficial effects of the invention are as follows：
(1) present invention carries out modeling and light extraction efficiency using Finite-Difference Time-Domain Method to the LED chip structure proposed
It calculates, then carries out parameter optimization, select suitable structural parameters that LED chip is made to have very high light extraction effect in wideband
Rate；
(2) LED chip light extraction efficiency of the present invention has reached 2.55 times or more of flat sheet membranes inverted structure LED, reaches
1.1 times of triangular crystal lattice photonic crystal LED light extraction efficiency；Preparation method is simple, utilizes dry etching technology or nanometer
Stamping technique is easily achieved the processing of class optical grating construction, can be applied to the white light of the blue chip and yellow-green fluorescence powder of mainstream
LED solution.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not constitute the improper restriction to the application for explaining the application.
Fig. 1 is that have the high light extraction LED chip structure figure of the wideband of class optical grating construction；
Fig. 2 is the two-dimensional cross sectional figure of class optical grating construction；
Fig. 3 is the spatial frequency spectrum real part distribution map of class screen periods；
Fig. 4 is different light extraction efficiency intensification factors of the LED with class optical grating construction relative to flat LED under wavelength
Schematic diagram.
Specific implementation mode
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific implementation mode, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
As background technology is introduced, exists in the prior art and be difficult with a determining photon crystal structure in width
Realize that effective light extraction is insufficient in frequency, in order to solve technical problem as above, present applicant proposes one kind having class grating knot
High light extraction LED chip of wideband of structure and preparation method thereof, using Finite-Difference Time-Domain Method to the LED chip structure that is proposed into
Row modeling and light extraction efficiency calculate, then carry out parameter optimization, select suitable structural parameters make LED chip in wideband all
There is very high light extraction efficiency.
In a kind of typical embodiment of the application, as shown in Figure 1, providing a kind of wideband with class optical grating construction
High light extraction LED chip, the LED chip include n-type semiconductor layer, multiple quantum well layer, p-type semiconductor layer and metallic reflector；n
Type semiconductor layer is grown on Sapphire Substrate, and multiple quantum well layer is grown on n-type semiconductor layer, p-type semiconductor layer life
It is longer than on multiple quantum well layer, the metallic film of one layer of 100nm thickness is grown in p-type semiconductor layer, as metallic reflector；Stripping
After Sapphire Substrate, class optical grating construction is set on the n-type semiconductor layer.In the present embodiment, the metallic film is using silver
Film.
In the present embodiment, the depth of the class optical grating construction be 200-300nm, average period 350-450nm, the period
Halfwidth is 170nm-250nm, and duty ratio 0.4-0.6, total semiconductor thickness is 400-1000nm.
The high light extraction LED chip light extraction efficiency of the wideband with class optical grating construction that the embodiment of the present invention proposes reaches
2.55 times or more of flat sheet membranes inverted structure LED have reached 1.1 times of photonic crystal LED light extraction efficiency；Preparation method letter
It is single, it is easily achieved the processing of class optical grating construction using dry etching technology or nanometer embossing, can be applied to mainstream
Blue chip and yellow-green fluorescence powder white light LEDs solution.
In another typical embodiment of the application, a kind of high light extraction of wideband with class optical grating construction is provided
The production method of LED chip, the production method include the following steps：
Step 101：Establish the cross-sectional view of class optical grating construction.It is illustrated in figure 2 the cross-sectional view of class optical grating construction.
The step 101 is realized in the following way：
Step 1011：The plural random matrix for obeying Two dimension normal distribution is generated using Matlab, utilizes Gaussian annulus
Shape filter is filtered the plural number random matrix, obtains the spatial spectral distribution figure of class screen periods, as shown in Figure 3；
Step 1012：To graph of spatial frequency spectrum carry out two-dimensional Fourier transform obtain a complex matrix, to complex matrix into
Row real value and dualization processing, obtain the two-dimensional cross sectional figure of class optical grating construction.It is illustrated in figure 2 the transversal of class optical grating construction
Face figure.
Step 201：The two-dimensional cross sectional figure that class optical grating construction is stretched along Z axis, by the two-dimensional cross sectional figure of class optical grating construction
It is changed into three-dimensional class optical grating construction, further builds three-dimensional LED chip model, multiple quantum wells is simulated using Finite-Difference Time-Domain Method
The light that layer is sent out calculates light extraction efficiency in LED chip internal communication situation.
Structure three-dimensional LED chip model specific method be：Successively to metal in Finite-Difference Time-Domain Method simulation software
Reflecting layer, p-type semiconductor layer, multiple quantum well layer, n-type semiconductor layer and class optical grating construction three-dimensional geometrical structure modeled,
Further the parameter of each layer of constituent material (absorption coefficient for including refractive index and light) is respectively set, obtains one three
The LED chip model of dimension.
Step 301：Processing is optimized to the relevant parameter of class optical grating construction using Finite-Difference Time-Domain Method, is obtained optimal
Result parameter.Realize that LED (wideband) in entire service band has higher light extraction efficiency.
In the present embodiment, the parameter of the class optical grating construction includes depth d, a average period0, the period halfwidth Δ
a0, duty ratio and total layer semiconductor thickness t.After optimization, the parameter of the class optical grating construction is：Depth 200-300nm, it is average
Period 350-450nm, period halfwidth 170nm-250nm, duty ratio 0.4-0.6, total semiconductor thickness 400-1000nm models
In enclosing, there is higher light extraction efficiency.
Step 401：Conventionally growing sapphire substrate, and light emitting epitaxial layer successively on substrate are made outer
Prolong piece, p-type semiconductor one layer of metallic film of grown on top as speculum and p-contact electrode, utilize eutectic welding technology will
Epitaxial wafer is welded on heat sink.
Step 501：Sapphire Substrate is peeled off using laser substrate desquamation method, chemical-mechanical polishing method is used in combination
Reduction processing is carried out to n-type semiconductor layer, n-type semiconductor thickness is made to meet result of calculation requirement.
Step 601：According to the parameter of the class optical grating construction after optimization, dry etching method or nano-imprinting method are utilized
The processing that class optical grating construction is carried out to n-type semiconductor layer, makes it meet the parameter of result of calculation.
In order to more preferably illustrate the effect of the present invention, present invention employs the class grating structural parameter after optimization, class grating knots
The parameter of structure：Depth 250nm, average period 350nm, period halfwidth 200nm, duty ratio 0.5, total semiconductor thickness
500nm, calculated result have higher light extraction efficiency, intensification factor to reach 2.5 between wavelength 400-500nm
Times, as shown in Figure 4.
The production method for the high light extraction LED chip of the wideband with class optical grating construction that the embodiment of the present invention proposes utilizes
Finite-Difference Time-Domain Method carries out modeling to the LED chip structure proposed and light extraction efficiency calculates, and then carries out parameter optimization,
Select suitable structural parameters that LED chip is made to have very high light extraction efficiency in wideband.LED chip light extraction effect of the present invention
Rate has reached 2.55 times or more of flat sheet membranes inverted structure LED, has reached 1.1 times of photonic crystal LED light extraction efficiency.It should
Structure is prepared simply, and the processing of class optical grating construction is easily achieved using dry etching technology or nanometer embossing.This hair
The white light LEDs solution of the bright blue chip that can be applied to mainstream and yellow-green fluorescence powder.
Above-mentioned, although the foregoing specific embodiments of the present invention is described with reference to the accompanying drawings, not protects model to the present invention
The limitation enclosed, those skilled in the art should understand that, based on the technical solutions of the present invention, those skilled in the art are not
Need to make the creative labor the various modifications or changes that can be made still within protection scope of the present invention.
Claims (8)
1. a kind of high light extraction LED chip of wideband with class optical grating construction, characterized in that the LED chip includes n-type semiconductor
Layer, multiple quantum well layer, p-type semiconductor layer and metallic reflector；On n-type semiconductor layer growth and Sapphire Substrate, Multiple-quantum
Well layer is grown on n-type semiconductor layer, and p-type semiconductor layer is grown on multiple quantum well layer, is grown in p-type semiconductor layer
One layer of metallic film, as metallic reflector；After removing Sapphire Substrate, a class grating knot is set on the n-type semiconductor layer
Structure.
2. the high light extraction LED chip of the wideband according to claim 1 with class optical grating construction, characterized in that the class
The depth of optical grating construction be 200-300nm, average period 350-450nm, period halfwidth be 170nm-250nm, duty ratio
For 0.4-0.6, total semiconductor thickness is 400-1000nm.
3. the high light extraction LED chip of the wideband according to claim 1 with class optical grating construction, characterized in that the gold
Category film is silverskin.
4. the production method of the high light extraction LED chip of the wideband with class optical grating construction described in any one of claim 1-3,
It is characterized in that including the following steps：
(1) the two-dimensional cross sectional figure of class optical grating construction is established；
(2) the dimension cross-sectional view that two class optical grating constructions are stretched along Z axis, is transformed into three-dimensional class optical grating construction, and establish LED core
Piece model, the light sent out using Finite-Difference Time-Domain Method simulation multiple quantum well layer are calculated light and carried in LED chip internal communication situation
Take efficiency；
(3) optimize the parameter of class optical grating construction；
(4) Sapphire Substrate is made, and grows light emitting epitaxial layer successively on substrate, epitaxial wafer is made, in p-type semiconductor layer
Epitaxial wafer is welded to heat sink by one layer of metallic film of grown on top as speculum and p-contact electrode using eutectic soldering method
On；
(5) Sapphire Substrate is peeled off using laser substrate desquamation method, is used in combination cmp method to n-type semiconductor
Layer carries out reduction processing；
(6) according to the parameter of the class optical grating construction after optimization, class optical grating construction is made on the n-type semiconductor layer.
5. the production method of the high light extraction LED chip of the wideband according to claim 4 with class optical grating construction, feature
It is the cross-sectional view for making class optical grating construction, including：
Establish the plural random matrix for obeying Two dimension normal distribution；
The plural random matrix of Two dimension normal distribution is filtered using Gaussian annular shape filter, obtains class screen periods
Spatial spectral distribution figure；
Two-dimensional Fourier transform is carried out to graph of spatial frequency spectrum and obtains a complex matrix；
Real value and dualization processing are carried out to complex matrix, obtain the two-dimensional cross sectional figure of class optical grating construction.
6. the production method of the high light extraction LED chip of the wideband according to claim 4 with class optical grating construction, feature
It is that the specific method of the construction LED chip model is：
Metallic reflector, p-type semiconductor layer, multiple quantum well layer, N-shaped are partly led successively in Finite-Difference Time-Domain Method simulation software
The three-dimensional geometrical structure of body layer and class optical grating construction is modeled, and the suction of the refractive index and light of each layer of constituent material is respectively set
Figure parameters are received, a three-dimensional LED chip model is obtained.
7. the production method of the high light extraction LED chip of the wideband according to claim 4 with class optical grating construction, feature
It is the parameter of the optimization class optical grating construction, including：
Processing is optimized to the parameter of class optical grating construction using Finite-Difference Time-Domain Method, obtains optimal structural parameters, wherein
The parameter of the class optical grating construction includes depth d, a average period0, the period halfwidth Δ a0With duty ratio f and total semiconductor
Layer thickness t.
8. the production method of the high light extraction LED chip of the wideband according to claim 4 with class optical grating construction, feature
Be according to the parameter of the class optical grating construction after optimization, make class optical grating construction on the n-type semiconductor layer, including：
According to the depth d of the optical grating construction after optimization, a average period0, the period halfwidth Δ a0It is partly led with duty ratio f and total
Bulk layer thickness t parameter makes class optical grating construction on the n-type semiconductor layer using dry etching method or nano-imprinting method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841714A (en) * | 2019-01-09 | 2019-06-04 | 南京邮电大学 | Vertical structure near ultraviolet light emitting diode and preparation method thereof |
| CN110314896A (en) * | 2019-03-21 | 2019-10-11 | 清华大学 | A kind of semiconductor substrate materials polishing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101395728A (en) * | 2006-03-10 | 2009-03-25 | 松下电工株式会社 | Light-emitting device |
| CN101826579A (en) * | 2009-03-03 | 2010-09-08 | Lg伊诺特有限公司 | Light emitting device |
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2018
- 2018-01-25 CN CN201810074158.1A patent/CN108321275B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101395728A (en) * | 2006-03-10 | 2009-03-25 | 松下电工株式会社 | Light-emitting device |
| CN101826579A (en) * | 2009-03-03 | 2010-09-08 | Lg伊诺特有限公司 | Light emitting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841714A (en) * | 2019-01-09 | 2019-06-04 | 南京邮电大学 | Vertical structure near ultraviolet light emitting diode and preparation method thereof |
| CN110314896A (en) * | 2019-03-21 | 2019-10-11 | 清华大学 | A kind of semiconductor substrate materials polishing method |
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