CN107863441A - High luminous efficiency LED preparation method and high luminous efficiency LED - Google Patents
High luminous efficiency LED preparation method and high luminous efficiency LED Download PDFInfo
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- CN107863441A CN107863441A CN201711219283.9A CN201711219283A CN107863441A CN 107863441 A CN107863441 A CN 107863441A CN 201711219283 A CN201711219283 A CN 201711219283A CN 107863441 A CN107863441 A CN 107863441A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The present invention relates to the preparation method of high luminous efficiency LED a kind of and high luminous efficiency LED.The preparation method includes：Prepare LED chip, support, substrate；The LED chip is fixed on the substrate and by the substrate bonding on the support, the electrode of the LED chip is welded on electrode pin by lead；On the LED chip surface, coating silica gel forms the first layer of silica gel and forms sphere lenses in first layer of silica gel using mould；The silica gel containing fluorescent material, which is applied, in the first silica gel layer surface forms the second layer of silica gel.The present invention in the first layer of silica gel and the second layer of silica gel by preparing sphere lenses, improve the problem of LED chip is luminous scattered, improve luminous efficiency, while fluorescent material is separated with LED chip, the quantum efficiency for solving the problems, such as fluorescent material caused by high temperature declines, so as to further improve luminous efficiency.
Description
Technical field
The invention belongs to technical field of semiconductor encapsulation, and in particular to a kind of high luminous efficiency LED preparation method and occurred frequently
Light rate LED.
Background technology
LED (Lighting Emitting Diode) lighting apparatus has the advantages that energy-conservation, long lifespan are just gradually taking because of it
For traditional incandescent lamp and electricity-saving lamp.For lighting apparatus, its core component is LED, and LED is that a kind of semiconducting solid lights
Device, it is by the use of solid semiconductor chip as luminescent material, compound releasing surplus is occurred by carrier in the semiconductors
Energy and cause photon to be launched, directly send red, yellow, blue, green light, on this basis, using the principle of three primary colours, addition is glimmering
Light powder, the light of random color can be sent.
And great power LED refers to the light emitting diode for possessing big rated operational current.Common LED power be generally 0.05W,
Operating current is 20mA, and great power LED can reach 1W, 2W, even tens of watts, and operating current can be tens milliamperes to several
Hundred milliamperes.But great power LED determines large power white light LED in the restriction of luminous flux, conversion efficiency etc. at present
Application in a short time is mainly the illumination of some special dimensions, and medium-term and long-term target is only general illumination.
Therefore, how to solve the luminous efficiency of great power LED just into current urgent problem to be solved.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of high luminous efficiency LED preparation side
Method and high luminous efficiency LED.
An embodiment provides a kind of high luminous efficiency LED preparation method, including：
Prepare LED chip, support, substrate；
The LED chip is fixed on the substrate and by the substrate bonding on the support, by the LED core
The electrode of piece is welded on electrode pin by lead；
On the LED chip surface, coating silica gel forms the first layer of silica gel and utilizes mould shape in first layer of silica gel
Globulate lens；
The silica gel containing fluorescent material, which is applied, in the first silica gel layer surface forms the second layer of silica gel to complete the LED's
Prepare.
In one embodiment of the invention, LED chip is prepared, including：
Choose Sapphire Substrate；
In the Grown on Sapphire Substrates GaN stabilized zones；
In the GaN stabilized zones superficial growth N-type GaN layer；
InGaN/GaN multi-quantum pit structures are prepared on the N-type GaN layer surface as active layer；
On the active layer surface growing P-type AlGaN barrier layers；
In the p-type AlGaN barrier layer surfaces growth P-type GaN layer；
In the p-type GaN layer surface deposition oxide layer；
Using dry etch process, the oxide layer, the p-type GaN layer, the p-type AlGaN resistance of designated area are etched
Barrier, the active layer are to spill the N-type GaN layer of designated area；
The oxide layer is removed, under Top electrode is made on the p-type GaN layer surface and is made on the N-type GaN layer surface
Electrode.
In one embodiment of the invention, substrate is chosen, including：
Choose the substrate that material is iron；
Some parallel through holes are set in the width direction in the substrate, and the through hole is formed with the substrate surface to incline
Angle.
In one embodiment of the invention, the thickness of the substrate is 0.5mm~10mm, the through hole it is a diameter of
0.2mm~0.4mm, the spacing between the through hole is 0.5mm~10mm.
In one embodiment of the invention, sphere lenses are formed in first layer of silica gel using mould, including：
Compacting is carried out in first layer of silica gel form hemispherical groove using hemispherical；
First baking processing is carried out to first layer of silica gel with the hemispherical, removes the hemispherical mould
Tool；
Silica gel is applied in the first silica gel layer surface, and is suppressed using the hemispherical with described first
Silica gel layer surface forms hemispherical projections；
First baking processing is carried out to first layer of silica gel with the hemispherical, removes the hemispherical mould
Tool, the sphere lenses are formed by the silica gel in the hemispherical groove and the hemispherical projections.
In one embodiment of the invention, the sphere lenses are rectangular or rhombus is equal in the first silica gel layer surface
Even arrangement.
In one embodiment of the invention, apply silica gel containing fluorescent material in the first silica gel layer surface and form the
Second silica gel layer, including：
Fluorescent material is configured in silica gel and forms the silica gel containing fluorescent material；
Second silicon of semi-spherical shape is formed in the first silica gel layer surface coating silica gel containing fluorescent material
Glue-line；
The second baking processing is carried out to second layer of silica gel, the time of the second baking processing is more than at the first baking
The time of reason.
In one embodiment of the invention, the wavelength of the fluorescent material is 570nm~620nm.
In one embodiment of the invention, apply silica gel containing fluorescent material in the first silica gel layer surface and form the
After second silica gel layer, in addition to：
The LED is carried out testing go-no-go and carries out packing processes.
An alternative embodiment of the invention provides a kind of high luminous efficiency LED, wherein, the LED is by above-described embodiment
Any described method prepares to be formed.
The high luminous efficiency LED of the embodiment of the present invention, at least had the following advantages that relative to prior art：
1st, fluorescent material separates with LED chip, and the quantum efficiency for solving the problems, such as fluorescent material caused by high temperature declines；
2nd, the characteristics of using variety classes silica gel with phosphor gel refractive index difference, lens are formed in silica gel, improves LED
The problem of chip light emitting disperses, it is that the light that light source is sent can be concentrated more；
3rd, sphere lenses can be with rectangular evenly distributed, or diamond array is to ensure that the light of light source is uniform in concentration zones
Distribution, reduce light loss；
4th, inclined via-hole is provided with a substrate, while intensity has almost no change, reduces aluminium cost, and increase
Add the passage of air circulation, using the thermal convection current of air, add radiating effect.
Brief description of the drawings
Fig. 1 is a kind of high luminous efficiency LED preparation flow schematic diagram provided in an embodiment of the present invention；
Fig. 2 is method flow diagram prepared by a kind of LED chip provided in an embodiment of the present invention；
Fig. 3 is a kind of structural representation of LED chip provided in an embodiment of the present invention；
Fig. 4 is a kind of structural representation of quantum well structure provided in an embodiment of the present invention；
Fig. 5 is a kind of preparation method schematic diagram of support/substrate provided in an embodiment of the present invention；
Fig. 6 is a kind of structural representation of substrate provided in an embodiment of the present invention；
Fig. 7 is a kind of LED chip welding process schematic diagram provided in an embodiment of the present invention；
Fig. 8 is a kind of schematic diagram of silica gel packaging technique provided in an embodiment of the present invention；
Fig. 9 is a kind of structural representation of great power LED provided in an embodiment of the present invention.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of high luminous efficiency LED preparation flow schematic diagram provided in an embodiment of the present invention.The party
Method comprises the following steps：
Step 1, prepare LED chip, support, substrate；
Step 2, the LED chip is fixed on the substrate and by the substrate bonding on the support, by institute
The electrode for stating LED chip is welded on electrode pin by lead；
Step 3, on the LED chip surface, coating silica gel forms the first layer of silica gel and using mould in first silica gel
Sphere lenses are formed in layer；
Step 4, apply silica gel containing fluorescent material in the first silica gel layer surface and form the second layer of silica gel to complete
State LED preparation.
The present embodiment, first by preparing sphere lenses in the first layer of silica gel and the second layer of silica gel, improve LED chip hair
The problem of light disperses, improve luminous efficiency, secondly by sphere lenses in layer of silica gel it is evenly distributed to ensure that the light of light source exists
Concentration zones are uniformly distributed, and again separate fluorescent material with LED chip, and the quantum efficiency for solving fluorescent material caused by high temperature declines
The problem of, so as to further improve luminous efficiency.
Embodiment two
Refer to Fig. 2 to Fig. 4, the method flow diagram that Fig. 2 is prepared for a kind of LED chip provided in an embodiment of the present invention, Fig. 3
For a kind of structural representation of LED chip provided in an embodiment of the present invention, Fig. 4 is a kind of SQW provided in an embodiment of the present invention
The structural representation of structure.The present embodiment on the basis of above-described embodiment, to the present invention LED chip describe in detail as
Under.Specifically, this method can include following flow：
Step 11, choose Sapphire Substrate.
Step 12, in the Grown on Sapphire Substrates GaN stabilized zones.
Alternatively, in the GaN cushions 102 that the surface elder generation growth thickness of Sapphire Substrate 101 is 3000~5000nm, growth
Temperature is 400 DEG C~600 DEG C；Wherein, through experimental demonstration, its preferred thickness is that 4000nm its optimal growth temperature is 500 DEG C.It
Afterwards at a temperature of 900 DEG C~1050 DEG C, in the GaN stabilized zones that the superficial growth thickness of GaN cushions 102 is 500nm~1500nm
103；Wherein, through experimental demonstration, its preferred thickness is that 1000nm its optimal growth temperature is 1000 DEG C.
Step 13, in the GaN stabilized zones superficial growth N-type GaN layer.
Alternatively, keeping temperature is constant, is the N that 200nm~1000nm mixes Si in the superficial growth thickness of GaN stabilized zones 103
Type GaN layer 104, its doping concentration are 1 × 1018cm-3~5 × 1019cm-3.Wherein, it is through experimental demonstration, its preferred growth thickness
400nm, optimal doping concentration are 1 × 1019cm-3。
Step 14, the N-type GaN layer surface prepare InGaN/GaN multi-quantum pit structures as active layer.
Alternatively, in the superficial growth InGaN/GaN multi-quantum pit structures of N-type GaN layer 104 as active layer 105, wherein
InGaN quantum well layers 105b growth temperature is 650 DEG C~750 DEG C, and GaN barrier layers 105a growth temperature is 750 DEG C~850
℃；The thickness that the SQW cycle is 8~30, InGaN quantum well layers 105b is 1.5nm~3.5nm, and wherein In content is about
10%~20%, its content is determined according to optical wavelength, and content is higher, and optical wavelength is longer；The thickness of GaN barrier layers be 5nm~
10nm.Wherein, through experimental demonstration, InGaN quantum well layers 105b preferred growth temperature is 750 DEG C, GaN barrier layers 105a it is excellent
Select growth temperature for 850 DEG C, InGaN quantum well layers 105b thickness be preferably 2.8nm, the thickness of GaN barrier layers is preferably
5nm, SQW cycle are preferably 20.
Step 15, on the active layer surface growing P-type AlGaN barrier layers.
Alternatively, 850 DEG C~950 DEG C are being warming up to, in the p-type that the superficial growth thickness of active layer 105 is 10~40nm
AlGaN barrier layers 106.Through experimental demonstration, temperature is preferably 900 DEG C, thickness is preferably 20nm.
Step 16, in the p-type AlGaN barrier layer surfaces growth P-type GaN layer.
Alternatively, in the p-type GaN layer 107 that the superficial growth thickness of p-type AlGaN barrier layers 106 is 100nm~300nm, make
Used for contact.
Step 17, in the p-type GaN layer surface deposition oxide layer.
Alternatively, using pecvd process, in (such as SiO of 107 surface deposition oxide layer of p-type GaN layer 1082), thickness is
300nm~800nm.Through experimental demonstration, thickness optimal value is 500nm.
Step 18, using dry etch process, etch the oxide layer, the p-type GaN layer, the p-type of designated area
AlGaN barrier layers, the active layer are to spill the N-type GaN layer of designated area.
Alternatively, bottom electrode window is etched using dry etch process, etches the layer material of designated area, until N-type
GaN layer 104.Remove the oxide layer 108 on surface.
Step 19, the oxide layer is removed, Top electrode is made on the p-type GaN layer surface and in the N-type GaN layer table
Face makes bottom electrode.
Alternatively, then SiO is deposited2Layer, its thickness is 300nm~800nm, etches electrode contact window.Through experimental demonstration,
Thickness optimal value is 500nm.Evaporation metal Cr/Pt/Au electrodes, wherein, Cr thickness is 20nm~40nm, and Pt thickness is
20nm~40nm, Au thickness are 800nm~1500nm；Through experimental demonstration, Cr thickness optimal value be 30nm, Pt thickness most
The figure of merit is that 30nm, Au thickness optimal value are 1200nm.Made annealing treatment afterwards at a temperature of 300 DEG C~500 DEG C, form metallization
Compound, and remove excess metal and form Top electrode 109a and bottom electrode 109b.Metal is deposited, photoetching lead, is deposited using PECVD
SiO2Passivation layer, figure photoetching, expose the region where electrode pad, subsequently to draw gold thread.
After the above step, by the thinning back side of Sapphire Substrate 101 to less than 150 μm, overleaf metallized reflective layer,
Such as metal Al, Ni, Ti.Scribing is carried out afterwards forms LED chip.
The present embodiment, blue light is excited to be used as LED chip by quantum well structure on a sapphire substrate, its luminous efficiency
Height, be advantageous to be lifted the luminous efficiency of great power LED.
Embodiment three
It is a kind of preparation method schematic diagram of support/substrate provided in an embodiment of the present invention to refer to Fig. 5 and Fig. 6, Fig. 5,
Fig. 6 is a kind of structural representation of substrate provided in an embodiment of the present invention.This implementation is on the basis of above-described embodiment, to this hair
The preparation of bright support and substrate is described in detail as follows.The preparation method can include：
Step a, support/substrate prepares.Suitable support and substrate are chosen, substrate can choose the preferable metal of thermal conductivity
Material, such as iron material matter.
Need to describe in detail, LED chip majority is packaged on thin metal matrix plate at present, due to metal substrate compared with
It is thin, thermal capacitance is smaller, and is easily deformed, cause it to contact defective tightness with fin bottom surface and influence radiating effect.To understand
Certainly this difficult problem, the present invention use board structure as shown in Figure 6, i.e., set in the width direction in substrate some parallel
Through hole, the through hole form inclination angle with the substrate surface.Wherein, the thickness of the substrate is 0.5mm~10mm, the diameter of through hole
For 0.2mm~0.4mm, and the spacing between through hole is 0.5mm~10mm.In addition, the angular range of the inclination is preferably 1~10
Degree.
Wherein, with inclined via-hole can be that direct casting is formed or the edge on the basis of iron substrate substantially
Width directly slots to be formed.
Step b, support/base-plate cleaning.In order to be packaged, support must keep cleaning, it is necessary to will be above with substrate
Spot, especially oil stain clean up.
Step c, support/substrate drying.Using stoving process, substrate and support is set to keep dry state.
The present embodiment, obtain bigger thermal capacitance by setting relatively thick metal substrate first and substrate can be kept
Contacted in the case of indeformable with heat abstractor closely to increase heat-conducting effect；Secondly inclined via-hole is set to increase on substrate empty
The logical passage of air-flow, the thermal convection current speed of air is lifted using stack effect, radiating effect is added, simultaneously because on substrate
Through hole is provided with, while intensity has almost no change the cost of metal substrate can also decline.
Example IV
Fig. 7 is referred to, Fig. 7 is a kind of LED chip welding process schematic diagram provided in an embodiment of the present invention.The present embodiment exists
The technique that emphasis welds to chip on the basis of above-described embodiment is described in detail as follows.Specifically, this method can include
Following steps：
Step 21, printing solder.
Step 22, the LED chip is fixed on the substrate.
Step 23, by the substrate bonding on the support and carrying out die bond inspection.
Step 24, using solder reflow process, the electrode of the LED chip is welded on electrode pin by lead.
Wherein, the bracket LED support typically has straight cutting LED support, Cannibalistic fish LED bracket, paster LED bracket and big work(
Rate LED support, the preferred high-power support of the present embodiment.In addition, the order of step 21 and step 22 can replace in the present embodiment,
No limitations are hereby intended.
Embodiment five
Fig. 8 is referred to, Fig. 8 is a kind of schematic diagram of silica gel packaging technique provided in an embodiment of the present invention.The present embodiment exists
On the basis of above-described embodiment, the silica gel packaging technique of the present invention is described in detail.Specifically, the technological process includes：
Step 31, first refractive index silica gel the first layer of silica gel of formation is applied above LED chip.Wherein, in the silica gel not
Containing fluorescent material, and it is high temperature resistant silica gel.The silica gel forms planar structure on LED chip surface.
It should be noted that fluorescent material be considered as influence white-light LED encapsulation efficiency of light extraction most important encapsulating material it
One, foreign study personnel have found that the light scattering characteristic of fluorescent material make it that significant component of forward entrance light can be dissipated backward
Penetrate.In current high-power LED encapsulation, fluorescent material is usually to be applied directly on chip surface.Because chip is for backward
There is absorption in the light of scattering, therefore, this mode directly coated will reduce the efficiency of light extraction of encapsulation.In addition, will
Fluorescent material is applied directly on chip, and high temperature caused by chip can be remarkably decreased the quantum efficiency of fluorescent material, so as to serious shadow
Ring the luminous efficiency to encapsulation.The first layer of silica gel of the present invention, there is high-temperature stability and do not contain phosphor material powder so that be glimmering
Light powder separates with LED chip, and the quantum efficiency for solving the problems, such as fluorescent material caused by high temperature declines.
Step 32, suppressed using hemispherical in the first layer of silica gel and form hemispherical groove.
Specifically, a diameter of 10 μm~200 μm of the hemispherical, in the first layer of silica gel carrying out compacting forms hemisphere
The groove of shape, and the spacing of these grooves is 10 μm~200 μm, and rectangular evenly distributed in the first layer of silica gel, Huo Zhecheng
It is staggered, it is of course also possible to be other arrangement modes, no limitations are hereby intended.
Step 33, by the first layer of silica gel with hemispherical at a temperature of 90 DEG C~125 DEG C, toast 15~60 points
Clock, remove hemispherical afterwards.
Step 34, the first silica gel layer surface apply the second refractive index silica gel, and using hemispherical suppressed with
Hemispherical projections are formed in the first silica gel layer surface, remove the second unnecessary refractive index silica gel.
Step 35, by the first layer of silica gel with hemispherical at a temperature of 90 DEG C~125 DEG C, toast 15~60 points
Clock, remove hemispherical afterwards and form sphere lenses.
Step 36, silica gel of the fluorescent material formation containing fluorescent material is configured in third reflect rate silica gel.
Wherein, fluorescent material can determine according to the color for the LED to be made, if for example, make White LED, by
Lighted in LED chip using Sapphire Substrate and using GaN material, then need to configure the fluorescent material of yellow, and fluorescent material contains
The colour temperature of the different light sources of how much formation of amount.For making other monochromatic LEDs, InGaN or GaN can be used, wavelength is
465nm, make blue led；Using (Y1Gd)3(AlGa)5O12, wavelength 550nm, make yellow led；Using Y2O2S:Eu3+,
Wavelength is 626nm, makes red LED；Using BaMgAl10O17:Eu2+,Mn2+, wavelength 515nm, make green LED.Certainly,
Multiple material can also be used to make the LED of corresponding colour mixture in the lump.
Step 37, in the first silica gel layer surface the silica gel containing fluorescent material is applied to form the second silica gel of semi-spherical shape
Layer.
Specifically, in order to realize spotlight effect, it is necessary to meet that the refractive index of the first layer of silica gel is less than the second layer of silica gel and ball
The refractive index of shape lens, and the refractive index of sphere lenses is greater than the refractive index of the second layer of silica gel, that is, meets equation below：
nFirst layer of silica gel<nSecond layer of silica gel<nSphere lenses；
It could so realize that the light of LED chip transmitting more shines out through encapsulating material well.And second silicon
The refractive index n of glue-lineSecond layer of silica gelIt is not easy too greatly, refractive index is optimal within 1.5, because the refractive index of one layer of silica gel of outermost is too
Greatly, big refringence will be formed between outer layer and air, total reflection effect is serious, is unfavorable for printing opacity.Layer of silica gel reflects
The reason for rate increases successively from bottom to top is to suppress to be totally reflected, because total reflection can cause emergent light to tail off, is totally reflected to
Internal light can be absorbed into useless heat.
Step 38, at a temperature of 100 DEG C~150 DEG C, by whole LED materials toast 4~12 hours.LED will be included
The whole LED materials of chip, the first layer of silica gel, sphere lenses, the second layer of silica gel etc. grow it is roasting, to form final LED.
The present embodiment, by the way that fluorescent material is separated with LED chip, under the quantum efficiency for solving fluorescent material caused by high temperature
The problem of drop.The silica gel contacted with LED chip is resistant to elevated temperatures silica gel, solves light transmittance decline caused by silica gel aging jaundice
The problem of.The characteristics of using variety classes silica gel with phosphor gel refractive index difference, lens are formed in silica gel, improve LED core
The problem of piece is luminous scattered, enables the light that LED light source is sent more to concentrate, improves the luminous efficiency of great power LED.
Alternatively, after LED preparation is completed, it is also necessary to carry out test go-no-go to the LED prepared, packed afterwards
It is processed for shipment.
Embodiment six
Fig. 9 is referred to, Fig. 9 is a kind of structural representation of great power LED provided in an embodiment of the present invention.Due to this implementation
Example emphasis is wanted to emphasize how to improve luminous efficiency, therefore the structures such as LED chip, support and electrode pin are eliminated in figure, but can
With understanding, there are configuration structure, support and the LED chip and LED chip and electricity of a variety of LED chips and substrate in the prior art
The annexation of pole pin, therefore here is omitted.Specifically, the LED includes substrate 91, the first layer of silica gel 92, spherical
The layer of silica gel 94 of mirror 93 and second, specific set-up mode are described in detail, also repeated no more herein in the above-described embodiments.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (10)
- A kind of 1. high luminous efficiency LED preparation method, it is characterised in that including：Prepare LED chip, support, substrate；The LED chip is fixed on the substrate and by the substrate bonding on the support, by the LED chip Electrode is welded on electrode pin by lead；On the LED chip surface, coating silica gel forms the first layer of silica gel and forms ball in first layer of silica gel using mould Shape lens；The silica gel containing fluorescent material, which is applied, in the first silica gel layer surface forms the second layer of silica gel to complete the system of the LED It is standby.
- 2. according to the method for claim 1, it is characterised in that LED chip is prepared, including：Choose Sapphire Substrate；In the Grown on Sapphire Substrates GaN stabilized zones；In the GaN stabilized zones superficial growth N-type GaN layer；InGaN/GaN multi-quantum pit structures are prepared on the N-type GaN layer surface as active layer；On the active layer surface growing P-type AlGaN barrier layers；In the p-type AlGaN barrier layer surfaces growth P-type GaN layer；In the p-type GaN layer surface deposition oxide layer；Using dry etch process, the oxide layer, the p-type GaN layer, the p-type AlGaN for etching designated area stop Layer, the active layer are to spill the N-type GaN layer of designated area；The oxide layer is removed, electricity under Top electrode is made on the p-type GaN layer surface and is made on the N-type GaN layer surface Pole.
- 3. according to the method for claim 1, it is characterised in that substrate is chosen, including：Choose the substrate that material is iron；Some parallel through holes are set in the width direction in the substrate, and the through hole forms inclination angle with the substrate surface.
- 4. according to the method for claim 3, it is characterised in that the thickness of the substrate is 0.5mm~10mm, the through hole A diameter of 0.2mm~0.4mm, the spacing between the through hole is 0.5mm~10mm.
- 5. according to the method for claim 1, it is characterised in that formed using mould in first layer of silica gel spherical Mirror, including：Compacting is carried out in first layer of silica gel form hemispherical groove using hemispherical；First baking processing is carried out to first layer of silica gel with the hemispherical, removes the hemispherical；Silica gel is applied in the first silica gel layer surface, and is suppressed using the hemispherical with first silica gel Layer surface forms hemispherical projections；First baking processing is carried out to first layer of silica gel with the hemispherical, removes the hemispherical, The sphere lenses are formed by the silica gel in the hemispherical groove and the hemispherical projections.
- 6. according to the method for claim 5, it is characterised in that the sphere lenses are in square in the first silica gel layer surface Shape or rhombus are evenly distributed.
- 7. according to the method for claim 1, it is characterised in that contain fluorescent material in the first silica gel layer surface coating Silica gel forms the second layer of silica gel, including：Fluorescent material is configured in silica gel and forms the silica gel containing fluorescent material；Second layer of silica gel of semi-spherical shape is formed in the first silica gel layer surface coating silica gel containing fluorescent material；The second baking processing is carried out to second layer of silica gel, the time of the second baking processing is more than the first baking processing Time.
- 8. according to the method for claim 1, it is characterised in that the wavelength of the fluorescent material is 570nm~620nm.
- 9. according to the method for claim 1, it is characterised in that contain fluorescent material in the first silica gel layer surface coating Silica gel is formed after the second layer of silica gel, in addition to：The LED is carried out testing go-no-go and carries out packing processes.
- 10. a kind of high luminous efficiency LED, it is characterised in that the LED prepares shape as the method described in claim any one of 1-9 Into.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711219283.9A CN107863441B (en) | 2017-11-28 | 2017-11-28 | Preparation method of high-luminous-rate LED and high-luminous-rate LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711219283.9A CN107863441B (en) | 2017-11-28 | 2017-11-28 | Preparation method of high-luminous-rate LED and high-luminous-rate LED |
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| Publication Number | Publication Date |
|---|---|
| CN107863441A true CN107863441A (en) | 2018-03-30 |
| CN107863441B CN107863441B (en) | 2020-12-22 |
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| CN101633220A (en) * | 2008-07-23 | 2010-01-27 | 和椿科技股份有限公司 | Micro lens, manufacturing method of mold insert of micro lens and luminescent device |
| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| US20140175468A1 (en) * | 2010-03-25 | 2014-06-26 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101633220A (en) * | 2008-07-23 | 2010-01-27 | 和椿科技股份有限公司 | Micro lens, manufacturing method of mold insert of micro lens and luminescent device |
| US20140175468A1 (en) * | 2010-03-25 | 2014-06-26 | Micron Technology, Inc. | Multi-lens solid state lighting devices |
| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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