CN107863441B - Preparation method of high-luminous-rate LED and high-luminous-rate LED - Google Patents

Preparation method of high-luminous-rate LED and high-luminous-rate LED Download PDF

Info

Publication number
CN107863441B
CN107863441B CN201711219283.9A CN201711219283A CN107863441B CN 107863441 B CN107863441 B CN 107863441B CN 201711219283 A CN201711219283 A CN 201711219283A CN 107863441 B CN107863441 B CN 107863441B
Authority
CN
China
Prior art keywords
silica gel
layer
gel layer
substrate
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711219283.9A
Other languages
Chinese (zh)
Other versions
CN107863441A (en
Inventor
尹晓雪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiaxing Minghe Intelligent Household Products Co ltd
Original Assignee
Jiaxing Minghe Intelligent Household Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiaxing Minghe Intelligent Household Products Co Ltd filed Critical Jiaxing Minghe Intelligent Household Products Co Ltd
Priority to CN201711219283.9A priority Critical patent/CN107863441B/en
Publication of CN107863441A publication Critical patent/CN107863441A/en
Application granted granted Critical
Publication of CN107863441B publication Critical patent/CN107863441B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Abstract

The invention relates to a preparation method of a high-luminous-rate LED and the high-luminous-rate LED. The preparation method comprises the following steps: preparing an LED chip, a bracket and a substrate; fixedly connecting the LED chip on the substrate, bonding the substrate on the bracket, and welding the electrode of the LED chip on the electrode pin through a lead wire; coating silica gel on the surface of the LED chip to form a first silica gel layer and forming a spherical lens in the first silica gel layer by using a mould; and coating silica gel containing fluorescent powder on the surface of the first silica gel layer to form a second silica gel layer. According to the invention, the spherical lenses are prepared in the first silica gel layer and the second silica gel layer, so that the problem of light emission dispersion of the LED chip is solved, the light emitting efficiency is improved, and meanwhile, the fluorescent powder is separated from the LED chip, so that the problem of quantum efficiency reduction of the fluorescent powder caused by high temperature is solved, and the light emitting efficiency is further improved.

Description

Preparation method of high-luminous-rate LED and high-luminous-rate LED
Technical Field
The invention belongs to the technical field of semiconductor packaging, and particularly relates to a preparation method of a high-luminous-rate LED and the high-luminous-rate LED.
Background
Led (lighting Emitting diode) lighting devices are gradually replacing conventional incandescent lamps and energy saving lamps due to their advantages of energy saving and long service life. The core component of the lighting equipment is the LED, the LED is a semiconductor solid light-emitting device, a solid semiconductor chip is used as a light-emitting material, excess energy is released by carrier recombination in a semiconductor to cause photon emission, and red, yellow, blue and green light is directly emitted.
And the high-power LED refers to a light-emitting diode with high rated working current. The power of a common LED is generally 0.05W, the working current is 20mA, while the power of a high-power LED can reach 1W, 2W or even tens of watts, and the working current can be dozens of milliamperes to hundreds of milliamperes. However, the current high-power LED is limited in luminous flux, conversion efficiency and the like, so that the short-term application of the high-power white light LED is mainly illumination in some special fields, and the medium-long term target is general illumination.
Therefore, how to solve the luminous efficiency of the high-power LED becomes an urgent problem to be solved.
Disclosure of Invention
In order to solve the above problems in the prior art, the invention provides a method for preparing a high-luminance LED and a high-luminance LED.
One embodiment of the present invention provides a method for manufacturing a high-luminance LED, including:
preparing an LED chip, a bracket and a substrate;
fixedly connecting the LED chip on the substrate, bonding the substrate on the bracket, and welding the electrode of the LED chip on the electrode pin through a lead wire;
coating silica gel on the surface of the LED chip to form a first silica gel layer and forming a spherical lens in the first silica gel layer by using a mould;
and coating silica gel containing fluorescent powder on the surface of the first silica gel layer to form a second silica gel layer so as to finish the preparation of the LED.
In one embodiment of the present invention, preparing an LED chip comprises:
selecting a sapphire substrate;
growing a GaN stable layer on the sapphire substrate;
growing an N-type GaN layer on the surface of the GaN stabilizing layer;
preparing an InGaN/GaN multi-quantum well structure on the surface of the N-type GaN layer to serve as an active layer;
growing a P-type AlGaN barrier layer on the surface of the active layer;
growing a P-type GaN layer on the surface of the P-type AlGaN barrier layer;
depositing an oxide layer on the surface of the P-type GaN layer;
etching the oxide layer, the P-type GaN layer, the P-type AlGaN barrier layer and the active layer in the designated region by using a dry etching process so as to leak the N-type GaN layer in the designated region;
and removing the oxide layer, manufacturing an upper electrode on the surface of the P-type GaN layer and manufacturing a lower electrode on the surface of the N-type GaN layer.
In one embodiment of the present invention, selecting a substrate includes:
selecting a base plate made of iron;
and a plurality of parallel through holes are arranged in the substrate along the width direction, and the through holes and the surface of the substrate form an inclination angle.
In one embodiment of the invention, the thickness of the substrate is 0.5 mm-10 mm, the diameter of the through holes is 0.2 mm-0.4 mm, and the distance between the through holes is 0.5 mm-10 mm.
In one embodiment of the present invention, forming a spherical lens in the first silicone gel layer using a mold includes:
pressing the first silica gel layer by using a hemispherical mold to form a hemispherical groove;
carrying out first baking treatment on the first silica gel layer with the hemispherical mold, and removing the hemispherical mold;
coating silica gel on the surface of the first silica gel layer, and pressing by using the hemispherical die to form a hemispherical bulge on the surface of the first silica gel layer;
and carrying out first baking treatment on the first silica gel layer with the hemispherical mold, removing the hemispherical mold, and forming the spherical lens by the hemispherical groove and the silica gel in the hemispherical protrusion.
In an embodiment of the invention, the spherical lenses are uniformly arranged on the surface of the first silica gel layer in a rectangular or rhombic shape.
In an embodiment of the present invention, applying a silica gel containing phosphor on a surface of the first silica gel layer to form a second silica gel layer includes:
preparing fluorescent powder in silica gel to form the silica gel containing the fluorescent powder;
coating the silica gel containing the fluorescent powder on the surface of the first silica gel layer to form a hemispherical second silica gel layer;
and carrying out second baking treatment on the second silica gel layer, wherein the time of the second baking treatment is longer than that of the first baking treatment.
In one embodiment of the invention, the wavelength of the fluorescent powder is 570 nm-620 nm.
In an embodiment of the present invention, after applying a silica gel containing phosphor on a surface of the first silica gel layer to form a second silica gel layer, the method further includes:
and testing, sorting and packaging the LEDs.
Another embodiment of the present invention provides a high-luminance LED, wherein the LED is formed by the method of any one of the above embodiments.
Compared with the prior art, the high-luminous-rate LED provided by the embodiment of the invention at least has the following advantages:
1. the fluorescent powder is separated from the LED chip, so that the problem of quantum efficiency reduction of the fluorescent powder caused by high temperature is solved;
2. the lens is formed in the silica gel by utilizing the characteristic that different types of silica gel and fluorescent powder gel have different refractive indexes, so that the problem of light emission dispersion of the LED chip is solved, and the light emitted by the light source can be more concentrated;
3. the spherical lenses can be uniformly arranged in a rectangular shape or in a rhombic shape to ensure that light rays of the light source are uniformly distributed in a concentrated area and reduce light loss;
4. the inclined through holes are formed in the substrate, so that the aluminum material cost is reduced while the strength is almost unchanged, air circulation channels are increased, and the heat convection of air is utilized to increase the heat dissipation effect.
Drawings
Fig. 1 is a schematic view of a process for manufacturing a high-luminance LED according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing an LED chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a quantum well structure according to an embodiment of the present invention;
FIG. 5 is a schematic view of a method for fabricating a carrier/substrate according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a substrate according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a welding process of an LED chip according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a silica gel encapsulation process according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a high-power LED according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic view illustrating a process for manufacturing an LED with high luminance according to an embodiment of the present invention. The method comprises the following steps:
step 1, preparing an LED chip, a bracket and a substrate;
step 2, fixedly connecting the LED chip on the substrate, bonding the substrate on the bracket, and welding the electrode of the LED chip on the electrode pin through a lead wire;
step 3, coating silica gel on the surface of the LED chip to form a first silica gel layer and forming a spherical lens in the first silica gel layer by using a mould;
and 4, coating silica gel containing fluorescent powder on the surface of the first silica gel layer to form a second silica gel layer so as to finish the preparation of the LED.
This embodiment, at first through prepare ball lens in first silica gel layer and second silica gel layer, improve the luminous dispersed problem of LED chip, improve luminous efficiency, secondly with ball lens align to grid in silica gel layer in order to guarantee the light of light source at the district evenly distributed that concentrates, separate phosphor powder and LED chip once more, solved the problem that the quantum efficiency of the phosphor powder that high temperature arouses descends to further improve luminous efficiency.
Example two
Referring to fig. 2 to 4, fig. 2 is a flowchart of a method for manufacturing an LED chip according to an embodiment of the present invention, fig. 3 is a schematic structural diagram of an LED chip according to an embodiment of the present invention, and fig. 4 is a schematic structural diagram of a quantum well structure according to an embodiment of the present invention. This embodiment describes the LED chip of the present invention in detail based on the above embodiment. Specifically, the method may include the following steps:
and 11, selecting a sapphire substrate.
And step 12, growing a GaN stable layer on the sapphire substrate.
Optionally, a GaN buffer layer 102 with the thickness of 3000-5000 nm is grown on the surface of the sapphire substrate 101 at the growth temperature of 400-600 ℃; wherein, the optimized thickness is 4000nm and the optimal growth temperature is 500 ℃ through experimental demonstration. Then, growing a GaN stabilizing layer 103 with the thickness of 500 nm-1500 nm on the surface of the GaN buffer layer 102 at the temperature of 900-1050 ℃; wherein, the optimal growth temperature is 1000 ℃ as proved by experiments, and the optimal thickness is 1000 nm.
And step 13, growing an N-type GaN layer on the surface of the GaN stabilizing layer.
Optionally, a Si-doped N-type GaN layer 104 with a doping concentration of 1 × 10 is grown on the surface of the GaN stabilizing layer 103 with a thickness of 200 nm-1000 nm and a constant temperature18cm-3～5×1019cm-3. Wherein, the experimental demonstration shows that the preferable growth thickness is 400nm, and the optimal doping concentration is 1 multiplied by 1019cm-3。
And step 14, preparing an InGaN/GaN multi-quantum well structure on the surface of the N-type GaN layer to serve as an active layer.
Optionally, growing an InGaN/GaN multi-quantum well structure on the surface of the N-type GaN layer 104 to serve as the active layer 105, wherein the growth temperature of the InGaN quantum well layer 105b is 650-750 ℃, and the growth temperature of the GaN barrier layer 105a is 750-850 ℃; the quantum well period is 8-30, the thickness of the InGaN quantum well layer 105b is 1.5-3.5 nm, the content of In is about 10-20%, the content is determined according to the wavelength of light, and the higher the content is, the longer the wavelength of light is; the thickness of the GaN barrier layer is 5 nm-10 nm. The experimental demonstration proves that the preferred growth temperature of the InGaN quantum well layer 105b is 750 ℃, the preferred growth temperature of the GaN barrier layer 105a is 850 ℃, the thickness of the InGaN quantum well layer 105b is preferably 2.8nm, the thickness of the GaN barrier layer is preferably 5nm, and the quantum well period is preferably 20.
And step 15, growing a P-type AlGaN barrier layer on the surface of the active layer.
Optionally, growing a P-type AlGaN barrier layer 106 with a thickness of 10-40 nm on the surface of the active layer 105 when the temperature is raised to 850-950 ℃. According to experimental demonstration, the temperature is preferably 900 ℃, and the thickness is preferably 20 nm.
And step 16, growing a P-type GaN layer on the surface of the P-type AlGaN barrier layer.
Alternatively, a P-type GaN layer 107 with a thickness of 100nm to 300nm is grown on the surface of the P-type AlGaN barrier layer 106 for contact.
And step 17, depositing an oxide layer on the surface of the P-type GaN layer.
Optionally, an oxide layer 108 (e.g., SiO) is deposited on the surface of the P-type GaN layer 107 by PECVD process2) The thickness is 300 nm-800 nm. The thickness optimal value is 500nm through experimental demonstration.
And 18, etching the oxide layer, the P-type GaN layer, the P-type AlGaN barrier layer and the active layer in the designated region by using a dry etching process so as to leak the N-type GaN layer in the designated region.
Optionally, the lower electrode window is etched by a dry etching process, and the layer material in the designated area is etched until reaching the N-type GaN layer 104. The surface oxide layer 108 is removed.
And 19, removing the oxide layer, manufacturing an upper electrode on the surface of the P-type GaN layer, and manufacturing a lower electrode on the surface of the N-type GaN layer.
Optionally, redepositing SiO2And a layer with a thickness of 300nm to 800nm, etching the electrode contact window. The thickness optimal value is 500nm through experimental demonstration. Evaporating a metal Cr/Pt/Au electrode, wherein the thickness of Cr is 20-40 nm, the thickness of Pt is 20-40 nm, and the thickness of Au is 800-1500 nm; experiments prove that the optimal thickness value of Cr is 30nm, the optimal thickness value of Pt is 30nm, and the optimal thickness value of Au is 1200 nm. Then, annealing treatment is carried out at the temperature of 300 ℃ to 500 ℃ to form a metal compound, and excess metal is removed to form the upper electrode 109a and the lower electrode 109 b. Depositing metal, photoetching lead, and depositing SiO by PECVD2And photoetching a passivation layer and a pattern to expose the region where the electrode pad is positioned so as to lead a gold wire in the following process.
After the above steps, the sapphire substrate 101 is thinned to 150 μm or less on the back side, and a metal reflective layer such as metal Al, Ni, Ti, or the like is plated on the back side. And then scribing to form the LED chip.
In the embodiment, the blue light is excited on the sapphire substrate through the quantum well structure to serve as the LED chip, so that the luminous efficiency is high, and the luminous efficiency of a high-power LED is favorably improved.
EXAMPLE III
Referring to fig. 5 and fig. 6, fig. 5 is a schematic view of a method for manufacturing a support/substrate according to an embodiment of the present invention, and fig. 6 is a schematic view of a structure of a substrate according to an embodiment of the present invention. The present embodiment describes in detail the preparation of the support and the substrate of the present invention on the basis of the above-mentioned embodiments, as follows. The preparation method can comprise the following steps:
step a, support/substrate preparation. The proper bracket and the substrate are selected, and the substrate can be made of a metal material with better heat conductivity, such as an iron material.
It should be noted that most of the current LED chips are packaged on a thin metal substrate, and the thin metal substrate has a small heat capacity and is easy to deform, so that the contact between the metal substrate and the bottom surface of the heat sink is not tight enough, which affects the heat dissipation effect. In order to solve the difficult problem, the present invention adopts the substrate structure as shown in fig. 6, i.e. a plurality of parallel through holes are arranged in the substrate along the width direction, and the through holes form an inclination angle with the surface of the substrate. Wherein the thickness of the substrate is 0.5 mm-10 mm, the diameter of the through holes is 0.2 mm-0.4 mm, and the distance between the through holes is 0.5 mm-10 mm. In addition, the included angle range of the inclination is preferably 1-10 degrees.
The inclined through holes can be formed by direct casting or direct grooving in the width direction on the basis of an iron substrate.
And b, cleaning the support/substrate. For packaging, the frame and the substrate must be kept clean, and stains, especially oil stains, on the frame and the substrate need to be cleaned.
And c, drying the support/substrate. And a drying process is adopted to keep the substrate and the bracket in a dry state.
In the embodiment, a relatively thick metal substrate is arranged to obtain larger heat capacity and can be closely contacted with a heat dissipation device under the condition that the substrate is not deformed so as to increase the heat conduction effect; and meanwhile, because the through holes are arranged on the substrate, the cost of the metal substrate can be reduced while the strength is almost unchanged.
Example four
Referring to fig. 7, fig. 7 is a schematic view illustrating a soldering process of an LED chip according to an embodiment of the present invention. The present embodiment focuses on the details of the die bonding process on the basis of the above-described embodiments as follows. Specifically, the method may comprise the steps of:
and step 21, printing solder.
And step 22, fixedly connecting the LED chip on the substrate.
And 23, bonding the substrate on the support and carrying out die bonding inspection.
And 24, welding the electrodes of the LED chip on the electrode pins through a lead by using a reflow soldering process.
The bracket LED bracket generally comprises a direct-insert LED bracket, a piranha LED bracket, a patch LED bracket and a high-power LED bracket, wherein the high-power bracket is preferred in the embodiment. In addition, the order of step 21 and step 22 in this embodiment can be replaced, and is not limited herein.
EXAMPLE five
Referring to fig. 8, fig. 8 is a schematic diagram of a silicone packaging process according to an embodiment of the present invention. In this embodiment, a silicone gel encapsulation process of the present invention is described in detail based on the above embodiments. Specifically, the process flow comprises the following steps:
and 31, coating first refractive index silica gel above the LED chip to form a first silica gel layer. Wherein, the silica gel does not contain fluorescent powder and is high temperature resistant silica gel. The silica gel forms a plane structure on the surface of the LED chip.
It should be noted that the phosphor is considered as one of the most important packaging materials affecting the light extraction efficiency of the white LED package, and foreign researchers find that the light scattering property of the phosphor is such that a significant portion of the normally incident light is backscattered. In the current high-power LED package, the phosphor is generally coated on the surface of the chip. This direct coating will reduce the light extraction efficiency of the package, since the chip absorbs the backscattered light. In addition, the fluorescent powder is directly coated on the chip, and the quantum efficiency of the fluorescent powder is obviously reduced due to the high temperature generated by the chip, so that the luminous efficiency of the package is seriously influenced. The first silica gel layer has high temperature resistance and does not contain a fluorescent powder material, so that the fluorescent powder is separated from the LED chip, and the problem of quantum efficiency reduction of the fluorescent powder caused by high temperature is solved.
And step 32, pressing the first silicone layer by using a hemispherical mold to form a hemispherical groove.
Specifically, the diameter of the hemispherical mold is 10 μm to 200 μm, the hemispherical grooves are formed by pressing in the first silicone layer, the pitch of the grooves is 10 μm to 200 μm, and the grooves are uniformly arranged in a rectangular shape or staggered in the first silicone layer, of course, other arrangement manners are also possible, and no limitation is made here.
And step 33, baking the first silica gel layer with the hemispherical mold at the temperature of 90-125 ℃ for 15-60 minutes, and then removing the hemispherical mold.
And step 34, coating second refractive index silica gel on the surface of the first silica gel layer, pressing by using a hemispherical mold to form hemispherical bulges on the surface of the first silica gel layer, and removing the redundant second refractive index silica gel.
And step 35, baking the first silica gel layer with the hemispherical mold at the temperature of 90-125 ℃ for 15-60 minutes, and then removing the hemispherical mold to form the spherical lens.
And step 36, configuring fluorescent powder in the silica gel with the third refractive index to form the silica gel containing the fluorescent powder.
For example, if a white LED is manufactured, since the LED chip adopts a sapphire substrate and a GaN material for light emission, yellow phosphor needs to be configured, and the amount of the phosphor forms the color temperature of different light sources. For making other single coloursThe LED can be InGaN or GaN, has the wavelength of 465nm, and is manufactured into a blue LED; by (Y)1Gd)3(AlGa)5O12The wavelength is 550nm, and a yellow LED is manufactured; by Y2O2S:Eu3+The wavelength is 626nm, and a red LED is manufactured; using BaMgAl10O17:Eu2+,Mn2+Wavelength of 515nm, green LED is made. Of course, LEDs with corresponding color mixing may also be fabricated using a plurality of materials together.
And step 37, coating silica gel containing fluorescent powder on the surface of the first silica gel layer to form a hemispherical second silica gel layer.
Specifically, in order to realize the light-gathering effect, it is necessary to satisfy that the refractive index of the first silica gel layer is smaller than the refractive indexes of the second silica gel layer and the spherical lens, and the refractive index of the spherical lens is larger than the refractive index of the second silica gel layer, that is, the following formula is satisfied:
nfirst silica gel layer<nSecond silica gel layer<nSpherical lens；
Thus, more light emitted by the LED chip can be well irradiated through the packaging material. And the refractive index n of the second silica gel layerSecond silica gel layerThe refractive index is not too large, the refractive index is within 1.5, which is the best, because the refractive index of the outermost layer of silica gel is too large, a large refractive index difference is formed between the outer layer and the air, the total reflection effect is serious, and the light transmission is not facilitated. The reason why the refractive index of the silica gel layer increases from bottom to top is to suppress total reflection, and since the total reflection causes the emitted light to be reduced, the light totally reflected inside is absorbed and becomes useless heat.
And step 38, baking the whole LED material for 4-12 hours at the temperature of 100-150 ℃. Namely, the whole LED material including the LED chip, the first silica gel layer, the spherical lens, the second silica gel layer and the like is subjected to long-time baking to form the final LED.
In the embodiment, the problem of the reduction of the quantum efficiency of the fluorescent powder caused by high temperature is solved by separating the fluorescent powder from the LED chip. The silica gel contacted with the LED chip is high-temperature-resistant silica gel, so that the problem of light transmittance reduction caused by aging and yellowing of the silica gel is solved. The lens is formed in the silica gel by utilizing the characteristics of different silica gel and fluorescent powder glue with different refractive indexes, so that the problem of light emitting dispersion of the LED chip is solved, the light emitted by the LED light source can be more concentrated, and the light emitting efficiency of the high-power LED is improved.
Optionally, after the preparation of the LEDs is completed, the prepared LEDs are required to be tested and sorted, and then packaged for shipment.
EXAMPLE six
Referring to fig. 9, fig. 9 is a schematic structural diagram of a high-power LED according to an embodiment of the present invention. Since the present embodiment focuses on how to improve the light emitting efficiency, structures such as the LED chip, the support, and the electrode pins are omitted in the drawings, but it can be understood that in the prior art, there are various configurations of the LED chip and the substrate, and connection relationships between the support and the LED chip, and between the LED chip and the electrode pins, and therefore, the details are not described here. Specifically, the LED includes a substrate 91, a first silicone rubber layer 92, a ball lens 93 and a second silicone rubber layer 94, and the specific arrangement manner is described in detail in the above embodiments, which is not described herein again.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (9)

1. A method for preparing a high-luminous-rate LED is characterized by comprising the following steps:
preparing an LED chip, a bracket and a substrate;
fixedly connecting the LED chip on the substrate, bonding the substrate on the bracket, and welding the electrode of the LED chip on the electrode pin through a lead wire;
coating silica gel on the surface of the LED chip to form a first silica gel layer; the first silica gel layer is of a plane structure;
pressing the first silica gel layer by using a hemispherical mold to form a plurality of separated hemispherical grooves;
carrying out first baking treatment on the first silica gel layer with the hemispherical mold, and removing the hemispherical mold;
coating silica gel on the surface of the first silica gel layer, and pressing by using the hemispherical die to form a hemispherical bulge on the surface of the first silica gel layer;
the spherical lens is formed by the silica gel in the hemispherical groove and the hemispherical bulge; coating silica gel containing fluorescent powder on the surface of the first silica gel layer to form a second silica gel layer so as to finish the preparation of the LED;
the upper surface of the second silica gel layer is semicircular, the refractive index of the first silica gel layer is smaller than that of the second silica gel layer and that of the spherical lens, the refractive index of the spherical lens is larger than that of the second silica gel layer, and the refractive index of the second silica gel layer is smaller than 1.5.
2. The method of claim 1, wherein preparing the LED chip comprises:
selecting a sapphire substrate;
growing a GaN stable layer on the sapphire substrate;
growing an N-type GaN layer on the surface of the GaN stabilizing layer;
preparing an InGaN/GaN multi-quantum well structure on the surface of the N-type GaN layer to serve as an active layer;
growing a P-type AlGaN barrier layer on the surface of the active layer;
growing a P-type GaN layer on the surface of the P-type AlGaN barrier layer;
depositing an oxide layer on the surface of the P-type GaN layer;
etching the oxide layer, the P-type GaN layer, the P-type AlGaN barrier layer and the active layer in the designated region by using a dry etching process so as to leak the N-type GaN layer in the designated region;
and removing the oxide layer, manufacturing an upper electrode on the surface of the P-type GaN layer and manufacturing a lower electrode on the surface of the N-type GaN layer.
3. The method of claim 1, wherein selecting a substrate comprises:
selecting a base plate made of iron;
and a plurality of parallel through holes are arranged in the substrate along the width direction, and the through holes and the surface of the substrate form an inclination angle.
4. The method of claim 3, wherein the substrate has a thickness of 0.5mm to 10mm, the through holes have a diameter of 0.2mm to 0.4mm, and the through holes have a pitch of 0.5mm to 10 mm.
5. The method of claim 1, wherein the spherical lenses are uniformly arranged in a rectangular or diamond shape on the surface of the first silica gel layer.
6. The method of claim 1, wherein coating the silica gel containing phosphor on the surface of the first silica gel layer to form a second silica gel layer comprises:
preparing fluorescent powder in silica gel to form the silica gel containing the fluorescent powder;
coating the silica gel containing the fluorescent powder on the surface of the first silica gel layer to form a hemispherical second silica gel layer;
and carrying out second baking treatment on the second silica gel layer, wherein the time of the second baking treatment is longer than that of the first baking treatment.
7. The method of claim 1, wherein the phosphor has a wavelength of 570nm to 620 nm.
8. The method according to claim 1, wherein after the step of coating the silica gel containing the phosphor on the surface of the first silica gel layer to form a second silica gel layer, the method further comprises:
and testing, sorting and packaging the LEDs.
9. A high-luminance LED prepared by the method of any one of claims 1 to 8.
CN201711219283.9A 2017-11-28 2017-11-28 Preparation method of high-luminous-rate LED and high-luminous-rate LED Active CN107863441B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711219283.9A CN107863441B (en) 2017-11-28 2017-11-28 Preparation method of high-luminous-rate LED and high-luminous-rate LED

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711219283.9A CN107863441B (en) 2017-11-28 2017-11-28 Preparation method of high-luminous-rate LED and high-luminous-rate LED

Publications (2)

Publication Number Publication Date
CN107863441A CN107863441A (en) 2018-03-30
CN107863441B true CN107863441B (en) 2020-12-22

Family

ID=61703950

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711219283.9A Active CN107863441B (en) 2017-11-28 2017-11-28 Preparation method of high-luminous-rate LED and high-luminous-rate LED

Country Status (1)

Country Link
CN (1) CN107863441B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101633220A (en) * 2008-07-23 2010-01-27 和椿科技股份有限公司 Micro lens, manufacturing method of mold insert of micro lens and luminescent device
CN201796891U (en) * 2010-09-27 2011-04-13 四川新力光源有限公司 Radiating device for integrated LED

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8552438B2 (en) * 2010-03-25 2013-10-08 Micron Technology, Inc. Multi-lens solid state lighting devices
CN103681991A (en) * 2013-12-20 2014-03-26 纳晶科技股份有限公司 Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof
DE102015104220A1 (en) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Optoelectronic lighting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101633220A (en) * 2008-07-23 2010-01-27 和椿科技股份有限公司 Micro lens, manufacturing method of mold insert of micro lens and luminescent device
CN201796891U (en) * 2010-09-27 2011-04-13 四川新力光源有限公司 Radiating device for integrated LED

Also Published As

Publication number Publication date
CN107863441A (en) 2018-03-30

Similar Documents

Publication Publication Date Title
CN108369977B (en) Low optical loss flip chip solid state lighting device
KR102401826B1 (en) Light emitting device package and lighting apparatus
JP4699681B2 (en) LED module and lighting device
US10461230B2 (en) Light emitting diode component
US9754926B2 (en) Light emitting diode (LED) arrays including direct die attach and related assemblies
JP6144014B2 (en) Light emitting element
US9490403B2 (en) Color converting element and light emitting device including the same
CN109075232A (en) Semiconductor component packing
TW202339302A (en) Contact structures of led chips for current injection
KR20160056167A (en) Method of manufacturing a light emitting device, apparatus for inspection of a light emitting module, and method of making a decision on whether a light emitting module meets a quality requirement
US11233183B2 (en) Light-emitting diodes, light-emitting diode arrays and related devices
JP2014053609A (en) Light-emitting element and method of manufacturing the same
US20120193670A1 (en) Light emitting device having wavelength converting layer and method of fabricating the same
CN107863441B (en) Preparation method of high-luminous-rate LED and high-luminous-rate LED
CN102130242A (en) Single-color LED (light-emitting diode) chip and method for forming single-color LED chip
TW201304191A (en) Semiconductor light-emitting device and method of manufacturing the same
CN108011018B (en) LED packaging structure
CN107863440A (en) High luminous efficiency led
CN108075028A (en) Vertical-type dual-colored LED chip
US20230343757A1 (en) Emission height arrangements in light-emitting diode packages and related devices and methods
CN108011019B (en) LED packaging method
CN107833947B (en) LED packaging method
CN108131601B (en) RGBY four-color LED stage lamp
TW202339309A (en) Arrangements of multiple-chip light-emitting diode packages
KR20210027943A (en) Semiconductor device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20201201

Address after: 314000 1-4, building 1, No. 1138 shunze Road, Nanhu District, Jiaxing City, Zhejiang Province

Applicant after: Jiaxing Minghe intelligent household products Co.,Ltd.

Address before: 710065 No. 86 Leading Times Square (Block B), No. 2, Building No. 1, Unit 22, Room 12202, No. 51, High-tech Road, Xi'an High-tech Zone, Shaanxi Province

Applicant before: XI'AN CREATION KEJI Co.,Ltd.

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of invention: Preparation method of high luminous rate led and high luminous rate led

Effective date of registration: 20220711

Granted publication date: 20201222

Pledgee: Agricultural Bank of China Limited by Share Ltd. South Lake branch

Pledgor: Jiaxing Minghe intelligent household products Co.,Ltd.

Registration number: Y2022330001190

PE01 Entry into force of the registration of the contract for pledge of patent right