CN104493685A - Sapphire wafer processing method - Google Patents
Sapphire wafer processing method Download PDFInfo
- Publication number
- CN104493685A CN104493685A CN201410011912.9A CN201410011912A CN104493685A CN 104493685 A CN104493685 A CN 104493685A CN 201410011912 A CN201410011912 A CN 201410011912A CN 104493685 A CN104493685 A CN 104493685A
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- wafer
- sapphire
- grinding
- polishing
- processing method
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
Abstract
The invention discloses a sapphire wafer processing method. The concrete technological processes wafer inspection, wafer waxing, coarse sand grinding, wafer cleaning, fine sand grinding, wafer cleaning and polishing. The processing method optimizes sapphire processing by conducting a two-stage single-side grinding process with sand of different grain sizes in a single-side grinding procedure. A sapphire wafer with a shallow surface damage layer and no surface scratch can be produced through two-stage single-side grinding so as to provide a wafer with high surface quality for sapphire polishing, reduce the necessary removal amount of the wafer in the polishing procedure and increase the efficiency of the polishing procedure. The processing method provided by the invention effectively reduces the processing and production cost of the sapphire wafer and improves the efficiency of a production line.
Description
Technical field
The invention belongs to LED substrate manufacture field, particularly a kind of sapphire wafer processing method.
Background technology
Sapphire wafer is the main backing material making blue-ray LED now, and it is made through crystal growth, section, grinding, chamfering, annealing, one side grinding, polishing and cleaning by high purity aluminium oxide.Along with LED product requires more and more higher to luminescent properties, it is also more and more higher to the requirement of backing material Sapphire wafer surface.Sapphire wafer polishing is individual very critical process, directly determines the surface quality of substrate slice after processing.Sapphire wafer quality is hard and polishing goes thick speed lower, at present only 3 μm/about h.Tradition sapphire processing in one side lapped face there is obvious cut and wafer surface damage layer thickness up to 4 ~ 6 μm, this makes to need to remove in polishing process in the processing of traditional sapphire wafer to be not less than 7 ~ 9 μm, causes wafer polishing comparatively to grow up to originally higher process time.Sapphire processing one side grinding after wafer without scratch, damage layer thickness at 2 ~ 3 μm, without the need to rough polishing operation in polishing process, polishing only needs to remove 4 ~ 5 μm, the present invention improves polishing production efficiency, reduces production cost, improves sapphire machining production line usefulness.
Summary of the invention
Sapphire process technology problem is thrown for solving above-mentioned tradition, the invention provides a kind of sapphire wafer processing method, cardinal principle is that the two kinds of lapping liquids utilizing size distribution different adopt the grinding of two-period form one side in conjunction with different grinding technics, first utilizing the larger lapping liquid of granularity (thick liquid) to carry out wafer surface goes thick fast, then it is planarized that the lapping liquid (thin liquid) that employing granularity is less carries out wafer surface, reduces damage layer thickness and the surface roughness of wafer surface simultaneously.After utilizing one side to grind, the sapphire abrasive sheet of low damage layer and no marking reduces removal quantity in polishing process, thus simplifies polishing process.It is characterized in that:
1, find defective of tool as one side abradant surface, carry out mark;
2, the wafer of different-thickness is distinguished, to wax;
3, utilize waxing machine to carry out wafer, and measure its thickness, record data;
4, coarse sand grinding: carry out one side grinding at outfit particle diameter 6 μm of diamond grinding fluids, pressure is 0.6 ~ 1.0kgf/cm
2, rotating speed is 40 ~ 80rpm, and lapping liquid flow is 1.5 ~ 3.5 ml/s, and spraying time stops 3s for spraying 2s, and after namely spraying lapping liquid 2s, interval 3s sprays again at every turn.Wafer process is 8 ~ 12 minutes, and wafer removes about 15 ~ 25 μm;
5, ceramic disk wafer cleaning: use acetone, remove ceramic disk surface Liquid diamond without absolute alcohol, guarantee noresidue Liquid diamond;
6, fine sand grinding: with particle diameter 2 μm of diamond grinding fluids and carry out one side grinding, pressure is 0.6 ~ 1.0kgf/cm
2, rotating speed is 40 ~ 80rpm, and lapping liquid flow is that 1.5 ~ 3.5 ml/s spraying times stop 3s for spraying 2s, and after namely spraying lapping liquid 2s, interval 3s sprays again at every turn.Wafer process is 8 ~ 12 minutes, and wafer removes about 8 ~ 12 μm;
7, to be ground after formulation thickness, stop grinding, and take out sapphire wafer;
8, wafer is put into dewax cleaning machine and carry out dewax cleaning, remove wafer surface wax;
9, polishing: pressure is 2.0 ~ 2.5kgf/cm
2, rotating speed is 40 ~ 80rpm, and temperature is 48 ~ 52 DEG C, and polishing fluid flow quantity is 20 ~ 50ml/s, process time 90 ~ 120min wafer removal quantity about 4 ~ 5 μm.
This invention simplifies polishing process step, improve polishing efficiency, reduce production cost, improve sapphire processing usefulness.
concrete embodiment
1, process substrate specification wafer
Carry out according to following operation: sapphire wafer enters one side grinding shop.Step is as follows: a, visual inspection; B, differentiation thickness; C, to wax; D, be equipped with the board one side grinding of particle diameter 6 μm of diamond grinding fluids; E, ceramic disk wafer cleaning; F, be equipped with the board one side grinding of particle diameter 2 μm of diamond grinding fluids; The cleaning of g, dewax, h, polishing.
Step a, finds defective of tool as one side abradant surface, carries out mark.
Step b, distinguishes the wafer of different-thickness, to wax.
Step c, waxes according to normal requirement, and waxing machine is 36SWM.And measure its thickness, record data.
Steps d, carry out one side grinding at the wound meter 36DPAW board being equipped with particle diameter 6 μm of diamond grinding fluids, pressure is 0.8kgf/cm
2, rotating speed is 60rpm, and lapping liquid flow is that 2.5ml/s spraying time stops 3s for spraying 2s.Wafer process is 10 minutes, and wafer removes 20 μm; Step e, uses acetone, removes ceramic disk surface Liquid diamond without absolute alcohol; Step f, carry out one side grinding at the wound meter 36DPAW board being equipped with particle diameter 2 μm of diamond grinding fluids, pressure is 0.7kgf/cm
2, rotating speed is 60rpm, and lapping liquid flow is that 2.5ml/s spraying time stops 2s for spraying 2s.Wafer process is 10 minutes, and wafer removes 10 μm; Step g, wafer is put into dewax cleaning machine and is carried out dewax cleaning, removes wafer surface wax; Step h, uses Ludox lapping liquid to carry out polishing, and polishing machine is wound meter 36DPAW, and wafer polishing removes 5 μm.
According to the wafer of two-period form sapphire of the present invention processing, meet substrate slice specification through defects such as polished and cleaned rear surface no marking, holes, under comparing original technique, production cost reduces 2.7 yuan/sheet, whole processing enhancing efficiency 10%.
2, process window sheet specification wafer
Carry out according to following operation: sapphire wafer enters one side grinding shop.Step is as follows: a, visual inspection; B, differentiation thickness; C, to wax; D, be equipped with the board one side grinding of particle diameter 6 μm of diamond grinding fluids; E, be equipped with the board one side grinding of particle diameter 2 μm of diamond grinding fluids; F, dewax clean; G, face of changing process, and repeat a-f step; H, polishing, i, change mirror polish.
Step a, finds defective of tool as one side abradant surface, carries out mark;
Step b, distinguishes the wafer of different-thickness, to wax;
Step c, waxes according to normal requirement, and waxing machine is 36SWM.And measure its thickness, record data;
Steps d, carry out one side grinding at the wound meter 36DPAW board being equipped with particle diameter 6 μm of diamond grinding fluids, pressure is 0.7kgf/cm
2, rotating speed is 70rpm, and lapping liquid flow is that 2.5ml/s spraying time stops 3s for spraying 2s.Wafer process is 8 minutes, and wafer removes 15 μm;
Step e, uses acetone, removes ceramic disk surface Liquid diamond without absolute alcohol;
Step f, carry out one side grinding at the wound meter 36DPAW board being equipped with particle diameter 2 μm of diamond grinding fluids, pressure is 0.7kgf/cm2, and rotating speed is 60rpm, and lapping liquid flow is that 2.5ml/s spraying time stops 2s for spraying 2s.Wafer process is 8 minutes, and wafer removes 8 μm;
Step g, wafer is put into dewax cleaning machine and is carried out dewax cleaning, removes wafer surface wax;
Step h, changes face one side attrition process, repeats a-f step;
Step I, uses Ludox lapping liquid to carry out polishing, and polishing machine is wound meter 36DPAW, and wafer polishing removes 5 μm.
Step j, changes mirror polish processing, uses Ludox lapping liquid to carry out polishing, and polishing machine is wound meter 36DPAW, and wafer polishing removes 5 μm.
According to the wafer of two-period form sapphire of the present invention processing, after changing face processing, twin polishing and cleaning, the defects such as surperficial no marking meet diaphragm specification, and compare original technique, production cost reduces 30%, whole processing enhancing efficiency 10%.
Claims (5)
1. a sapphire wafer processing method, is characterized in that:
(1) receive wafer to be ground, find defective of tool as one side abradant surface, carry out mark;
(2) wafer of different-thickness is distinguished, to wax; Utilize waxing machine to carry out wafer, and measure its thickness, record data;
(3) coarse sand grinding: with particle diameter 6 μm of diamond grinding fluids and carry out one side grinding;
(4) wafer on cleaning ceramic dish after end to be ground;
(5) fine sand grinding: with particle diameter 2 μm of diamond grinding fluids and carry out one side grinding;
(6) to be ground after appointed thickness, stop grinding, and take out sapphire wafer;
(7) wafer is put into dewax cleaning machine and carry out dewax cleaning, remove wafer surface wax;
(8) deliver wafer polishing operation and carry out polishing.
2. sapphire wafer processing method as claimed in claim 1, is characterized in that: lapping liquid concentration: 0.3 ~ 0.5 wt.%.
3. sapphire wafer processing method as claimed in claim 1, it is characterized in that: in coarse sand grinding steps, pressure is 0.6 ~ 1.0 kgf/cm
2, rotating speed is 40 ~ 80rpm, and lapping liquid flow is 1.5 ~ 3.5 ml/s, and spraying time stops 3s for spraying 2s, and wafer process is 8 ~ 12 minutes, and wafer removes 15 ~ 25 μm.
4. sapphire wafer processing method as claimed in claim 1, it is characterized in that: in fine sand grinding steps, pressure is 0.6 ~ 1.0kgf/cm
2, rotating speed is 40 ~ 80rpm, and lapping liquid flow is 1.5 ~ 3.5 ml/s, and spraying time stops 3s for spraying 2s, and wafer process is 8 ~ 12 minutes, and wafer removes about 8 ~ 12 μm.
5. sapphire wafer processing method as claimed in claim 1, it is characterized in that: in polishing step, pressure is 2.0 ~ 2.5kgf/cm
2, rotating speed is 40 ~ 80rpm, and temperature is 48 ~ 52 DEG C, and polishing fluid flow quantity is 20 ~ 50ml/s, process time 90 ~ 120min wafer removal quantity about 4 ~ 5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410011912.9A CN104493685A (en) | 2014-01-12 | 2014-01-12 | Sapphire wafer processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410011912.9A CN104493685A (en) | 2014-01-12 | 2014-01-12 | Sapphire wafer processing method |
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| Publication Number | Publication Date |
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| CN104493685A true CN104493685A (en) | 2015-04-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410011912.9A Pending CN104493685A (en) | 2014-01-12 | 2014-01-12 | Sapphire wafer processing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655240A (en) * | 2016-04-05 | 2016-06-08 | 福建晶安光电有限公司 | Processing method of sapphire wafers |
| CN109732462A (en) * | 2018-12-28 | 2019-05-10 | 江苏澳洋顺昌集成电路股份有限公司 | A kind of processing method of large-sized wafer |
| CN110465846A (en) * | 2019-07-25 | 2019-11-19 | 江苏吉星新材料有限公司 | A kind of face type restorative procedure of large-size sapphire substrate wafer piece |
| CN111098224A (en) * | 2018-10-26 | 2020-05-05 | 东莞新科技术研究开发有限公司 | Semiconductor substrate and surface polishing method thereof |
| CN111993257A (en) * | 2020-08-14 | 2020-11-27 | 深圳市前海国佳科技有限公司 | Grinding and polishing method and grinding and polishing system for semiconductor chip |
-
2014
- 2014-01-12 CN CN201410011912.9A patent/CN104493685A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655240A (en) * | 2016-04-05 | 2016-06-08 | 福建晶安光电有限公司 | Processing method of sapphire wafers |
| CN111098224A (en) * | 2018-10-26 | 2020-05-05 | 东莞新科技术研究开发有限公司 | Semiconductor substrate and surface polishing method thereof |
| CN109732462A (en) * | 2018-12-28 | 2019-05-10 | 江苏澳洋顺昌集成电路股份有限公司 | A kind of processing method of large-sized wafer |
| CN110465846A (en) * | 2019-07-25 | 2019-11-19 | 江苏吉星新材料有限公司 | A kind of face type restorative procedure of large-size sapphire substrate wafer piece |
| CN111993257A (en) * | 2020-08-14 | 2020-11-27 | 深圳市前海国佳科技有限公司 | Grinding and polishing method and grinding and polishing system for semiconductor chip |
| CN111993257B (en) * | 2020-08-14 | 2022-02-08 | 深圳市前海国佳科技有限公司 | Grinding and polishing method and grinding and polishing system for semiconductor chip |
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