TWI556912B - Chemical mechanical polishing conditioner with high quality abrasive particles - Google Patents

Chemical mechanical polishing conditioner with high quality abrasive particles Download PDF

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TWI556912B
TWI556912B TW102146375A TW102146375A TWI556912B TW I556912 B TWI556912 B TW I556912B TW 102146375 A TW102146375 A TW 102146375A TW 102146375 A TW102146375 A TW 102146375A TW I556912 B TWI556912 B TW I556912B
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chemical mechanical
mechanical polishing
abrasive
high quality
dresser
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TW102146375A
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TW201524685A (en
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周瑞麟
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中國砂輪企業股份有限公司
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Priority to US14/535,866 priority patent/US20150165588A1/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Description

高品質磨料之化學機械研磨修整器 High quality abrasive chemical mechanical polishing dresser

本發明係關於一種高品質磨料之化學機械研磨修整器,尤指一種適用於去除風險鑽石之高品質磨料之化學機械研磨修整器。 The invention relates to a chemical mechanical polishing dresser for high quality abrasives, in particular to a chemical mechanical polishing dresser suitable for removing high quality abrasives of risk diamonds.

化學機械研磨(Chemical Mechanical Polishing,CMP)係為各種產業中常見之研磨製程。利用化學研磨製程可研磨各種物品的表面,包括陶瓷、矽、玻璃、石英、或金屬的晶片等。此外,隨著積體電路發展迅速,因化學機械研磨可達到大面積平坦化之目的,故為半導體製程中常見的晶圓平坦化技術之一。 Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including ceramic, tantalum, glass, quartz, or metal wafers. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing.

在半導體之化學機械研磨過程中,係利用研磨墊(Pad)對晶圓(或其它半導體元件)接觸,並視需要搭配使用研磨液,使研磨墊透過化學反應與物理機械利以移除晶圓表面之雜質或不平坦結構;當研磨墊使用一定時間後,由於研磨過程所產生的研磨屑積滯於研磨墊之表面而造成研磨 效果及效率降低,因此,可利用修整器(conditioner)對研磨墊表面磨修,使研磨墊之表面再度粗糙化,並維持在最佳的研磨狀態。然而,在修整器之製備過程中,需要將研磨顆粒及結合層混合形成之研磨層設置於基板表面,並經由硬焊或燒結等硬化方式使研磨層固定結合於基板表面。惟在上述修整器之製作過程中,或是修整器進行拋光墊修整時都有可能會造成鑽石顆粒破裂,即所謂的風險鑽石(Risk Diamond),使修整器變成為有缺陷的,因此有必要對修整器實施一檢測並去除該風險鑽石以確保後續使用能得到預期的研磨效果。習知檢查拋光墊修整器是否具有風險鑽石之作法大多採用人工以光學顯微鏡(OM)進行視覺觀察,一旦發現有風險鑽石,便利用例如油性筆之標記手段將該位置圈出再拍照,最後再以人工比對研磨前後照片,並藉由手工或機械方式去除該風險鑽石,以避免風險鑽石殘留於修整器上。 In the chemical mechanical polishing process of semiconductors, the wafers (or other semiconductor components) are contacted by a polishing pad (Pad), and the polishing liquid is used in combination with the polishing pad to remove the wafer by chemical reaction and physical mechanical advantage. Impurity or uneven structure of the surface; when the polishing pad is used for a certain period of time, the grinding debris generated by the grinding process is accumulated on the surface of the polishing pad to cause grinding The effect and efficiency are reduced. Therefore, the surface of the polishing pad can be ground by a conditioner to re-roughen the surface of the polishing pad and maintain the optimum grinding state. However, in the preparation process of the dresser, the polishing layer formed by mixing the abrasive particles and the bonding layer is required to be disposed on the surface of the substrate, and the polishing layer is fixedly bonded to the surface of the substrate by hardening such as brazing or sintering. However, during the manufacture of the above-mentioned dresser, or when the dresser is finished with a polishing pad, the diamond particles may be broken. The so-called Risk Diamond makes the dresser defective, so it is necessary. A test is performed on the dresser and the risk diamond is removed to ensure that the subsequent use results in the desired abrasive effect. It is customary to check whether the polishing pad dresser has a risky diamond. Most of the methods are manually observed by optical microscopy (OM). Once a dangerous diamond is found, it is convenient to mark the position with a marker such as an oil-based pen and then take a photo. Finally, Manually align the front and back photos and remove the risk diamond by hand or mechanically to avoid risky diamonds remaining on the dresser.

已知技術中,如中華民國專利公開號第201102215號,係揭示一種在CMP處理程序期間自一CMP拋光墊的拋光表面上移除污染物以及/或是碎屑的方法與系統。在一方面,一在CMP處理程序期間自一CMP拋光墊的拋光表面上移除碎屑的方法可包含旋轉一具有拋光表面的CMP拋光墊;以及將一CMP拋光墊修整器壓向該CMP拋光墊的拋光表面,其中該CMP拋光墊修整器包含有複數耦合於其上的複數超研磨顆粒,該複數超研磨顆粒並且被定向朝向該CMP拋光墊。該方法可進一步包含以一充足力量噴灑一液體噴射注到該CMP拋光墊的拋光表面上來驅除該CMP拋光墊 的拋光表面上的碎屑。 A known method, such as the Republic of China Patent Publication No. 201102215, discloses a method and system for removing contaminants and/or debris from a polishing surface of a CMP pad during a CMP process. In one aspect, a method of removing debris from a polishing surface of a CMP pad during a CMP process can include rotating a CMP pad having a polished surface; and pressing a CMP pad dresser toward the CMP pad A polishing surface of the pad, wherein the CMP pad dresser includes a plurality of superabrasive particles coupled thereto, the plurality of superabrasive particles being oriented toward the CMP pad. The method may further comprise spraying a liquid jet onto the polishing surface of the CMP pad with a sufficient force to drive the CMP pad The debris on the polished surface.

此外,另一已知技術的中華民國專利公告號第438650號,係揭示一種在化學機械研磨製程中,回收鑽石輪的方法。堆積在鑽石輪上的二氧化矽,先利用水刀(water jet)以1500~6000psi的高壓噴灑去離子水(DI Water)沖洗其表面,如此可以除去大部分粉屑,再將鑽石輪放在溫度為40℃的加熱平台上,利用溫度為0℃,壓力為800~6000psi高壓的二氧化碳氣體,伴隨乾淨的乾空氣,沖刷鑽石輪的表面,即可除去殘餘的二氧化矽,最後,再將鑽石輪置入超音波水槽中,以去離子水震洗,清除剩餘的雜質。經過這三個步驟,即可以除去鑽石輪表面上大部分的二氧化矽,並且回收重複使用鑽石輪。 Further, another known technique of the Republic of China Patent Publication No. 438650 discloses a method of recovering a diamond wheel in a chemical mechanical polishing process. The cerium oxide deposited on the diamond wheel is first rinsed with a water jet at a high pressure of 1500-6000 psi with DI Water. This removes most of the dust and places the diamond wheel. On a heating platform with a temperature of 40 ° C, using a carbon dioxide gas with a temperature of 0 ° C and a pressure of 800 to 6000 psi, with clean dry air, flushing the surface of the diamond wheel, the residual cerium oxide can be removed, and finally, The diamond wheel is placed in an ultrasonic sink and shaken with deionized water to remove any remaining impurities. After these three steps, most of the cerium oxide on the surface of the diamond wheel can be removed and the recycled diamond wheel can be recycled.

然而,上述化學機械研磨修整器之水刀裝置皆是針對用以在研磨過程中,移除修整器或拋光墊表面的碎屑,以維持修整器及拋光墊間的研磨性能,並無法改善在修整器製作過程中的風險鑽石殘留問題。因此,目前急需發展出一種高品質磨料之化學機械研磨修整器,用以去除在修整器表面上的風險鑽石,進而避免風險鑽石在化學機械研磨過程中對於拋光墊產生的刮傷及破壞。 However, the water knife device of the above chemical mechanical polishing dresser is aimed at removing the debris of the surface of the dresser or the polishing pad during the grinding process to maintain the grinding performance between the dresser and the polishing pad, and cannot be improved. Risk diamond residue in the trimmer manufacturing process. Therefore, there is an urgent need to develop a high-quality abrasive chemical mechanical polishing dresser to remove the risk diamond on the surface of the dresser, thereby avoiding the scratching and damage of the polishing pad during the chemical mechanical grinding process.

本發明之一目的係在提供一種高品質磨料之化學機械研磨修整器,其藉由一水刀裝置,用以將風險鑽石從該化學機械研磨修整器中去除,進而避免風險鑽石在化學機 械研磨過程中對於拋光墊產生的刮傷及破壞。 One object of the present invention is to provide a high quality abrasive chemical mechanical polishing dresser for removing risk diamonds from the chemical mechanical polishing dresser by a water knife device, thereby avoiding risky diamonds in the chemical machine. Scratches and damage to the polishing pad during mechanical grinding.

在一般化學機械研磨修整器的製作過程中,大都是將金屬合金之焊料粉末及鑽石顆粒鋪設於不鏽鋼基材表面,再進行加熱硬焊,使鑽石顆粒藉由焊料合金以固定於基材表面,即完成化學機械研磨修整器的製作。然而,在化學機械研磨修整器的實際製作過程中,由於部分的鑽石顆粒含有具有雙晶結構、內裂結構或結合層包覆率過低之鑽石的風險鑽石,其中,風險鑽石的存在可能是來自於鑽石顆粒本身的原料來源、或是鑽石顆粒在硬焊過程或是修整器後製加工過程中所造成的缺陷,而不同於晶型完整的一般鑽石顆粒可提供優異及穩定的研磨性能,因此,本發明將藉由水刀裝置及高壓流體將風險鑽石由該化學機械研磨修整器上去除,進而避免風險鑽石在化學機械研磨過程中對於拋光墊產生的刮傷及破壞。此外,本發明除了可藉由水刀裝置及高壓流體將風險鑽石由該化學機械研磨修整器上去除,更可以進一步將晶型完整的鑽石顆粒填補於該風險鑽石去除後所遺留的位置上,以維持原有修整器表面所配置之鑽石顆粒數目及排列圖案。 In the process of manufacturing a general chemical mechanical polishing dresser, the solder powder and diamond particles of the metal alloy are mostly laid on the surface of the stainless steel substrate, and then heated and brazed, so that the diamond particles are fixed on the surface of the substrate by the solder alloy. That is, the production of the chemical mechanical polishing dresser is completed. However, in the actual fabrication process of the chemical mechanical polishing dresser, since some of the diamond particles contain diamonds having a twin crystal structure, an internal crack structure or a diamond with a low coverage ratio, the presence of the risk diamond may be The source of raw materials from the diamond particles themselves, or the defects caused by the diamond particles during the brazing process or the finishing process of the dresser, and the general diamond particles different from the crystal form provide excellent and stable grinding performance. Therefore, the present invention removes the risk diamond from the chemical mechanical polishing dresser by the waterjet device and the high pressure fluid, thereby avoiding the scratching and damage of the risky diamond to the polishing pad during the chemical mechanical polishing process. In addition, in addition to the removal of the risk diamond from the chemical mechanical polishing conditioner by the waterjet device and the high pressure fluid, the present invention can further fill the crystallized diamond particles in the position left after the risk diamond is removed. In order to maintain the number of diamond particles and the arrangement pattern of the original finisher surface.

為達成上述目的,本發明之高品質磨料之化學機械研磨修整器,包括:一基板;一結合層,該結合層設置於該基板上;以及複數個研磨顆粒,該些研磨顆粒埋設於該結合層,且該些研磨顆粒藉由該結合層以固定於該基板上;其中,該高品質磨料之化學機械研磨修整器可經由一輸送裝置移動通過一水刀裝置及一高壓流體,且該高壓流體透過該 水刀裝置作用於該些研磨顆粒,用以去除該些研磨顆粒內所含有之一個或複數個風險鑽石。 In order to achieve the above object, a high-quality abrasive chemical mechanical polishing dresser of the present invention comprises: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles embedded in the bonding a layer, and the abrasive particles are fixed to the substrate by the bonding layer; wherein the high-quality abrasive chemical mechanical polishing conditioner can be moved through a water jet device and a high pressure fluid via a conveying device, and the high pressure Fluid through The waterjet device acts on the abrasive particles to remove one or a plurality of risk diamonds contained within the abrasive particles.

於前述本發明之高品質磨料之化學機械研磨修整器中,該風險鑽石可具有雙晶結構、內裂結構或結合層包覆率過低之鑽石,其中,風險鑽石的存在可能是來自於鑽石顆粒本身的原料來源、或是鑽石顆粒在硬焊過程或是修整器後製加工過程中所造成的缺陷,而不同於晶型完整的一般鑽石顆粒可提供優異及穩定的研磨性能,由於該些風險鑽石具有雙晶結構、內裂結構或結合層包覆率過低之鑽石存在於鑽石顆粒的內部或表面,所以將造成鑽石顆粒的強度及晶型受到破壞,並造成該些風險鑽石的研磨性能變差。 In the above-mentioned high-quality abrasive chemical mechanical polishing dresser of the present invention, the risk diamond may have a twin crystal structure, an internal crack structure or a diamond with a low coverage ratio, wherein the risk diamond may be derived from a diamond. The source of the raw material of the granule itself, or the defects caused by the diamond granule during the brazing process or the finishing process of the dresser, and the ordinary diamond granules which are different from the crystal form can provide excellent and stable grinding performance due to the Risk diamonds with a twin crystal structure, an internal crack structure or a diamond with a low coverage ratio are present in the interior or surface of the diamond particles, so the strength and crystal form of the diamond particles are destroyed, and the diamonds of the risk diamonds are caused to be ground. Performance is degraded.

於本發明之高品質磨料之化學機械研磨修整器中,該水刀裝置可包含有1個或複數個噴嘴裝置,該水刀裝置所含有的噴嘴裝置數目可依據使用者需求或對該些鑽石顆粒之品質要求而任意變化,其中,於本發明之一態樣中,該水刀裝置可包含有2個至10個噴嘴裝置;於本發明之另一態樣中,該水刀裝置可包含有3個至5個噴嘴裝置。此外,於前述本發明之高品質磨料之化學機械研磨修整器中,該些噴嘴裝置之噴嘴孔徑可依據使用者需求或對該些研磨顆粒之品質要求而任意變化,其中,於本發明之一態樣中,該些噴嘴裝置可具有相同的噴嘴孔徑;於本發明之另一態樣中,該些噴嘴裝置可具有不同的噴嘴孔徑,本發明並未侷限於此。 In the chemical mechanical polishing dresser of the high quality abrasive of the present invention, the water jet device may include one or a plurality of nozzle devices, and the water jet device may include nozzle devices according to user requirements or the diamonds. The water jet device may comprise two to ten nozzle devices in one aspect of the invention; in another aspect of the invention, the waterjet device may comprise There are 3 to 5 nozzle devices. In addition, in the CMP polishing dresser of the high-quality abrasive of the present invention, the nozzle aperture of the nozzle device can be arbitrarily changed according to the user's requirements or the quality requirements of the abrasive particles, wherein one of the inventions In the aspect, the nozzle devices may have the same nozzle aperture; in another aspect of the invention, the nozzle devices may have different nozzle apertures, and the invention is not limited thereto.

於本發明之高品質磨料之化學機械研磨修整器中,該些噴嘴裝置可形成不同的噴射角度,不同於傳統水刀 大多侷限於單一噴嘴及單一角度之清洗功能,本發明之該噴嘴裝置可依據使用者需求或對研磨顆粒之品質要求而任意變化形成各種噴射角度朝向該修整器表面之該些研磨顆粒。此外,於前述本發明之高品質磨料之化學機械研磨修整器中,該水刀裝置可為一固定機構,例如,固定式水刀,使該高壓流體藉由固定之水刀裝置或噴嘴裝置以作用於該些研磨顆粒之固定位置,以去除該些研磨顆粒內所含有之風險鑽石,或者,該水刀裝置可為一旋轉機構,例如,旋轉式水刀,使該高壓流體藉由持續旋轉之水刀裝置或噴嘴裝置以作用於該些研磨顆粒之非固定位置。 In the chemical mechanical polishing dresser of the high quality abrasive of the present invention, the nozzle devices can form different spray angles, which is different from the traditional water jet cutter. Mostly limited to a single nozzle and a single angle cleaning function, the nozzle device of the present invention can be arbitrarily changed according to the user's requirements or the quality requirements of the abrasive particles to form the abrasive particles having various ejection angles toward the surface of the dresser. In addition, in the above-mentioned high-quality abrasive chemical mechanical polishing dresser of the present invention, the waterjet device may be a fixing mechanism, for example, a fixed waterjet, so that the high-pressure fluid is fixed by a waterjet device or a nozzle device. Acting on the fixed positions of the abrasive particles to remove the risk diamond contained in the abrasive particles, or the waterjet device may be a rotating mechanism, such as a rotary waterjet, to continuously rotate the high pressure fluid The waterjet device or nozzle device acts on the non-fixed position of the abrasive particles.

於本發明之高品質磨料之化學機械研磨修整器中,該旋轉機構之轉速可視使用需求者需求或對該些研磨顆粒之品質要求而任意變化,其中,該旋轉機構之轉速可為5rpm(轉/分鐘)至2,000rpm;於本發明之一態樣中,該旋轉機構之轉速可為10rpm至1,050rpm。此外,於本發明之高品質磨料之化學機械研磨修整器中,該高壓流體作用於該些研磨顆粒之壓力可視使用者需求或對該些研磨顆粒之品質要求而任意變化,其中,該高壓流體作用於該些研磨顆粒之壓力可為300psi(磅/平方英寸)至40,000psi;於本發明之一態樣中,該高壓流體作用於該些研磨顆粒之壓力可為1,000psi至32,000psi。 In the chemical mechanical polishing dresser of the high-quality abrasive of the present invention, the rotation speed of the rotating mechanism can be arbitrarily changed according to the demand of the user or the quality requirements of the abrasive particles, wherein the rotation speed of the rotating mechanism can be 5 rpm. /min) to 2,000 rpm; in one aspect of the invention, the rotational speed of the rotating mechanism may be from 10 rpm to 1,050 rpm. In addition, in the chemical mechanical polishing dresser of the high-quality abrasive of the present invention, the pressure of the high-pressure fluid acting on the abrasive particles may be arbitrarily changed according to user requirements or quality requirements of the abrasive particles, wherein the high-pressure fluid The pressure acting on the abrasive particles can range from 300 psi to 40,000 psi; in one aspect of the invention, the high pressure fluid can be applied to the abrasive particles at a pressure of from 1,000 psi to 32,000 psi.

於本發明之高品質磨料之化學機械研磨修整器中,該高品質磨料之化學機械研磨修整器可經由輸送裝置移動通過水刀裝置及高壓流體,使該高壓流體透過該水刀裝置 作用於該些研磨顆粒,用以去除該些研磨顆粒內所含有之一個或複數個風險鑽石,此外,該輸送裝置之移動速度可視使用者需求或對該些研磨顆粒之品質要求而任意變化,其中,該輸送裝置之移動速度可為10毫米/分鐘至1,000毫米/分鐘。 In the high-quality abrasive chemical mechanical polishing dresser of the present invention, the high-quality abrasive chemical mechanical polishing dresser can be moved through the waterjet device and the high-pressure fluid via the conveying device, and the high-pressure fluid is transmitted through the waterjet device. Acting on the abrasive particles to remove one or more risk diamonds contained in the abrasive particles, and the moving speed of the conveying device may be arbitrarily changed according to user requirements or quality requirements of the abrasive particles. Wherein, the conveying speed of the conveying device may be from 10 mm/min to 1,000 mm/min.

於本發明之高品質磨料之化學機械研磨修整器中,該水刀裝置可具有一升降機構,用以調整該水刀裝置及該高品質磨料修整器之間距,且同時可在固定的高壓流體壓力下,藉由間距變化以調整該高壓流體作用於該些研磨顆粒之壓力,此外,該水刀裝置及該高品質磨料修整器之間距可視使用者需求或對該些研磨顆粒之品質要求而任意變化,本發明並未侷限於此。 In the chemical mechanical polishing dresser of the high quality abrasive of the present invention, the water jet device may have a lifting mechanism for adjusting the distance between the water jet device and the high quality abrasive dresser, and at the same time, the fixed high pressure fluid Under pressure, the pressure of the high-pressure fluid is applied to the abrasive particles by a change in the spacing, and further, the distance between the waterjet device and the high-quality abrasive dresser is visually required by the user or the quality requirements of the abrasive particles. The invention is not limited thereto as arbitrarily changed.

於本發明之高品質磨料之化學機械研磨修整器中,該高壓流體可為能夠移除風險鑽石的任何流體,例如,純水、超純水、非腐蝕性流體、其類似物或其組合,本發明並未侷限於此。其中,前述所指的超純水意指經離子交換樹脂、活性碳、濾膜法去除水中主要不純物質,在25℃時比阻抗值達到18.2MΩ.cm的水,並可減少高壓流體對於修整器表面的結合層造成的腐蝕或破壞。 In the high quality abrasive chemical mechanical polishing conditioner of the present invention, the high pressure fluid may be any fluid capable of removing risky diamonds, such as pure water, ultrapure water, non-corrosive fluids, the like, or combinations thereof. The invention is not limited thereto. Wherein, the above-mentioned ultrapure water means that the main impurity substances in the water are removed by ion exchange resin, activated carbon and membrane method, the water having a specific resistance value of 18.2 MΩ·cm at 25 ° C, and the high pressure fluid can be reduced for trimming. Corrosion or damage caused by the bonding layer on the surface of the device.

於本發明之高品質磨料之化學機械研磨修整器中,該些研磨顆粒可為人造鑽石、天然鑽石、多晶鑽石、或立方氮化硼;在本發明之一較佳態樣中,該些研磨顆粒為人造鑽石。另一方面,於本發明之平坦化之化學機械研磨修整器中,該些研磨顆粒之粒徑可為30微米至600微米;於本發 明之一態樣中,該些研磨顆粒之粒徑為200微米。 In the chemical mechanical polishing dresser of the high quality abrasive of the present invention, the abrasive particles may be synthetic diamonds, natural diamonds, polycrystalline diamonds, or cubic boron nitride; in a preferred aspect of the invention, the The abrasive particles are synthetic diamonds. In another aspect, in the planarized chemical mechanical polishing conditioner of the present invention, the abrasive particles may have a particle diameter of 30 micrometers to 600 micrometers; In one aspect, the abrasive particles have a particle size of 200 microns.

於本發明之高品質磨料之化學機械研磨修整器中,該結合層之組成分或研磨顆粒之組成分或尺寸可依據研磨加工的條件及需求而任意變化,該結合層之組成可為陶瓷材料、硬焊材料、電鍍材料、金屬材料、或高分子材料,本發明並未侷限於此。在本發明之一態樣中,該結合層可為一焊料層,該焊料層可至少一選自由鐵、鈷、鎳、鉻、錳、矽、鋁、銅、及其組合所組成之群組。於本發明之另一態樣中,該高分子材料係為環氧樹脂、聚酯樹脂、聚丙烯酸樹脂、酚醛樹脂。此外,於本發明之平坦化之化學機械研磨修整器中,該基板之材質及尺寸可依據研磨加工的條件及需求而任意變化,其中,該基板之材質可為不鏽鋼、模具鋼、金屬合金、陶瓷材料或高分子材料或其組合等,本發明並未侷限於此。在本發明之一較佳態樣中,該基板之材質可為不鏽鋼基板。 In the chemical mechanical polishing dresser of the high-quality abrasive of the present invention, the composition of the bonding layer or the composition or size of the abrasive particles may be arbitrarily changed according to the conditions and requirements of the grinding process, and the composition of the bonding layer may be a ceramic material. The brazing material, the plating material, the metal material, or the polymer material, the present invention is not limited thereto. In one aspect of the invention, the bonding layer can be a solder layer, and the solder layer can be at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, copper, and combinations thereof. . In another aspect of the invention, the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin. In addition, in the planarized chemical mechanical polishing dresser of the present invention, the material and size of the substrate may be arbitrarily changed according to the conditions and requirements of the polishing process, wherein the material of the substrate may be stainless steel, die steel, metal alloy, The present invention is not limited to the ceramic material or the polymer material or a combination thereof. In a preferred aspect of the invention, the substrate may be made of a stainless steel substrate.

綜上所述,根據本發明之高品質磨料之化學機械研磨修整器,可用以將研磨顆粒中的風險鑽石去除,進而避免風險鑽石在化學機械研磨過程中對於拋光墊產生的刮傷及破壞。 In summary, the high quality abrasive chemical mechanical polishing dresser according to the present invention can be used to remove the risk diamond in the abrasive particles, thereby avoiding scratches and damage to the polishing pad during the chemical mechanical polishing process.

10,20,30‧‧‧化學機械研磨修整器 10,20,30‧‧‧Chemical mechanical polishing dresser

11‧‧‧輸送裝置 11‧‧‧Conveyor

12,22,32‧‧‧水刀裝置 12,22,32‧‧‧waterjet device

120,220,320‧‧‧噴嘴裝置 120,220,320‧‧‧ nozzle device

13,23,33‧‧‧高壓流體 13,23,33‧‧‧High pressure fluid

14‧‧‧升降機構 14‧‧‧ Lifting mechanism

101,201,301‧‧‧基板 101,201,301‧‧‧substrate

102,202,302‧‧‧結合層 102,202,302‧‧‧bonding layer

103,203,303‧‧‧研磨顆粒 103,203,303‧‧‧Abrasive granules

104,204,304‧‧‧風險鑽石 104,204,304‧‧‧Ranger diamonds

圖1A係本發明高品質磨料之化學機械研磨修整器之裝置示意圖。 1A is a schematic view of a chemical mechanical polishing dresser of the high quality abrasive of the present invention.

圖1B係本發明實施例1之高品質磨料之化學機械研磨修整 器之示意圖。 1B is a chemical mechanical polishing dressing of a high quality abrasive according to Embodiment 1 of the present invention. Schematic diagram of the device.

圖2係本發明實施例2之高品質磨料之化學機械研磨修整器之裝置示意圖。 2 is a schematic view of a chemical mechanical polishing dresser of a high quality abrasive according to a second embodiment of the present invention.

圖3係本發明實施例3之高品質磨料之化學機械研磨修整器之裝置示意圖。 Fig. 3 is a schematic view showing the apparatus of the chemical mechanical polishing dresser of the high quality abrasive according to the third embodiment of the present invention.

以下係藉由具體實施例說明本發明之實施方式,熟習此技藝之人士可由本說明書所揭示之內容輕易地了解本發明之其他優點與功效。此外,本發明亦可藉由其他不同具體實施例加以施行或應用,在不悖離本發明之精神下進行各種修飾與變更。 The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate the other advantages and advantages of the present invention. In addition, the present invention may be embodied or modified by various other embodiments without departing from the spirit and scope of the invention.

實施例1 Example 1

本發明之高品質磨料之化學機械研磨修整器可用以去除化學機械研磨修整器之風險鑽石,進而避免風險鑽石在化學機械研磨過程中對於拋光墊產生的括傷及破壞。請參考圖1,圖1A係高品質磨料之化學機械研磨修整器之裝置示意圖,圖1B係為本發明實施例1高品質磨料之化學機械研磨修整器之示意圖。如圖1所示,本發明之高品質磨料之化學機械研磨修整器10,包括:一不鏽鋼材質之基板101;一鎳基金屬焊料之結合層102,及複數個研磨顆粒103,藉由加熱硬焊的方式,使該些研磨顆粒103埋設固定於該結合層102,且該些研磨顆粒103藉由該結合層102以固定於該基板101上;其中,該些研磨顆粒103為粒徑200微米之人工鑽 石,且研磨顆粒103的設置方式可以為一般習知的佈鑽技術(例如,模板佈鑽),並可藉由模板(圖未顯示)控制研磨顆粒103的間距及排列方式,此外,於前述的該些研磨顆粒103內也同時存在著少數具有雙晶結構、內裂結構或結合層包覆率過低之風險鑽石104。 The high quality abrasive chemical mechanical polishing dresser of the present invention can be used to remove the risk diamond of the chemical mechanical polishing dresser, thereby avoiding the damage and damage of the diamond to the polishing pad during the chemical mechanical polishing process. Please refer to FIG. 1. FIG. 1A is a schematic view of a chemical mechanical polishing dresser of a high quality abrasive, and FIG. 1B is a schematic view of a chemical mechanical polishing dresser of a high quality abrasive according to Embodiment 1 of the present invention. As shown in FIG. 1, the high-quality abrasive chemical mechanical polishing dresser 10 of the present invention comprises: a stainless steel substrate 101; a nickel-based metal solder bonding layer 102, and a plurality of abrasive particles 103, which are hardened by heating. The abrasive particles 103 are embedded and fixed to the bonding layer 102, and the abrasive particles 103 are fixed on the substrate 101 by the bonding layer 102; wherein the abrasive particles 103 have a particle diameter of 200 micrometers. Artificial drill The stone, and the abrasive particles 103 can be arranged in a conventional cloth drilling technique (for example, a template drilling), and the spacing and arrangement of the abrasive particles 103 can be controlled by a template (not shown). A plurality of diamonds 104 having a double crystal structure, an internal crack structure, or a low coverage ratio of the bonding layer are also present in the abrasive particles 103.

如圖1所示,該高品質磨料之化學機械研磨修整器10可經由一輸送裝置11移動通過一水刀裝置12及一高壓流體13,其中,該水刀裝置12包含有4個噴嘴裝置120,該4個噴嘴裝置120均連通同一個母管,此外,該高壓流體13為純水並透過該水刀裝置12作用於該化學機械研磨修整器10表面,且該噴嘴裝置120可控制該高壓流體13以垂直方向或垂直角度朝向該些研磨顆粒103,該些研磨顆粒103會受到來自高壓流體13的應力,致具有雙晶結構、內裂結構或結合層包覆率過低之風險鑽石104因與結合層之附著強度較差而脫落,以去除該些研磨顆粒103內所含有之一個或複數個風險鑽石104,此外,於實施例1之高品質磨料之化學機械研磨修整器10中,該高壓流體13作用於該些研磨顆粒103之壓力為1,000psi至32,000psi,該輸送裝置11之移動速度為10毫米/分鐘至1,000mm/min毫米/分鐘。此外,前述之該水刀裝置12更具有一升降機構14,以調整該水刀裝置12及該化學機械研磨修整器10之間距,並藉由間距變化以調整該高壓流體13作用於該些研磨顆粒103之壓力。 As shown in FIG. 1, the high quality abrasive chemical mechanical polishing dresser 10 can be moved through a water transfer device 12 and a high pressure fluid 13 via a transport device 11, wherein the water jet device 12 includes four nozzle devices 120. The four nozzle devices 120 are all connected to the same mother tube. In addition, the high pressure fluid 13 is pure water and acts on the surface of the chemical mechanical polishing dresser 10 through the waterjet device 12, and the nozzle device 120 can control the high voltage. The fluid 13 faces the abrasive particles 103 in a vertical or vertical angle, and the abrasive particles 103 are subjected to stress from the high pressure fluid 13 to have a risk of a twin crystal structure, an internal crack structure or a low coverage ratio of the bonding layer. The one or more risk diamonds 104 contained in the abrasive particles 103 are removed due to the poor adhesion strength to the bonding layer, and further, in the chemical mechanical polishing conditioner 10 of the high quality abrasive of the first embodiment, The high pressure fluid 13 is applied to the abrasive particles 103 at a pressure of from 1,000 psi to 32,000 psi, and the conveying device 11 is moved at a speed of from 10 mm/min to 1,000 mm/min mm/min. In addition, the waterjet device 12 further has a lifting mechanism 14 for adjusting the distance between the waterjet device 12 and the chemical mechanical polishing conditioner 10, and adjusting the spacing of the high pressure fluid 13 to act on the polishing. The pressure of the particles 103.

如圖1B所示,該高品質磨料之化學機械研磨修整器10係將金屬焊料合金所組成之結合層102及研磨顆粒 103鋪設於不鏽鋼之基材101表面,再進行加熱硬焊,使研磨顆粒103藉由結合層102以固定於基材101表面,即完成高品質磨料之化學機械研磨修整器10的製作。然而,由於研磨顆粒103中含有部分具有雙晶結構、內裂結構或結合層包覆率過低的風險鑽石104,因此,本發明將利用水刀裝置12(請一併參考圖1A)及高壓液體13將風險鑽石104由該化學機械研磨修整器10上去除,進而避免風險鑽石104在化學機械研磨過程中對於拋光墊產生的刮傷及破壞。 As shown in FIG. 1B, the high-quality abrasive chemical mechanical polishing dresser 10 is a bonding layer 102 composed of a metal solder alloy and abrasive particles. 103 is laid on the surface of the stainless steel substrate 101, and then heat-hardened to make the abrasive particles 103 fixed to the surface of the substrate 101 by the bonding layer 102, that is, the production of the high-quality abrasive chemical mechanical polishing conditioner 10. However, since the abrasive particles 103 contain a part of the risk diamond 104 having a twin crystal structure, an internal crack structure or a low binding ratio of the bonding layer, the present invention will utilize the water jet device 12 (please refer to FIG. 1A together) and the high voltage. The liquid 13 removes the risk diamond 104 from the chemical mechanical polishing conditioner 10, thereby avoiding the scratching and damage of the polishing pad 104 to the polishing pad during the chemical mechanical polishing process.

實施例2 Example 2

請參考圖2,圖2係本發明實施例2之高品質磨料之化學機械研磨修整器之裝置示意圖。實施例2與前述實施例1所述之高品質磨料之化學機械研磨修整器10之裝置大致相同,其不同之處在於,實施例1之噴嘴裝置120可控制高壓流體13以垂直角度朝向該些研磨顆粒103,而實施例2之噴嘴裝置220可控制高壓流體23以各種角度同時朝向該些研磨顆粒203,更能將具有雙晶結構、內裂結構或結合層包覆率過低之風險鑽石204因與結合層202之附著強度較差而脫落,且高壓流體23朝向該些研磨顆粒203的角度可視使用需要而任意變化,不同於傳統水刀裝置中的噴嘴裝置僅設計為單一噴嘴及單一噴射角度,故傳統水刀裝置只具有一般除屑清洗功能,而無法達到本發明所需之移除風險鑽石204的功用。如圖2所示,該水刀裝置22包含有4個噴嘴裝置220,且該噴嘴裝置220可控制該高壓流體23(圖中虛線箭頭表示) 以不同角度同時朝向化學機械研磨修整器20表面之該些研磨顆粒203,因此作用在該些研磨顆粒203上的各點壓力也不同,促使具有雙晶結構、內裂結構或結合層包覆率過低之風險鑽石204可從基板201上之結合層202將風險鑽石204移除,以避免風險鑽石204在化學機械研磨過程中對於拋光墊產生的刮傷及破壞。 Please refer to FIG. 2. FIG. 2 is a schematic diagram of a chemical mechanical polishing dresser of a high quality abrasive according to Embodiment 2 of the present invention. Embodiment 2 is substantially the same as the apparatus of the high-quality abrasive CMP apparatus 10 described in the foregoing Embodiment 1, except that the nozzle device 120 of Embodiment 1 can control the high-pressure fluid 13 to face the vertical angles. The particles 103 are ground, and the nozzle device 220 of Embodiment 2 can control the high pressure fluid 23 to face the abrasive particles 203 at various angles at the same time, and is more likely to have a risk of having a twin crystal structure, an internal crack structure or a low coverage ratio of the bonding layer. The 204 is detached due to the poor adhesion strength with the bonding layer 202, and the angle of the high-pressure fluid 23 toward the abrasive particles 203 is arbitrarily changed according to the needs of use, and the nozzle device different from the conventional waterjet device is designed as a single nozzle and a single jet. Angle, the conventional water jet device only has the general chip cleaning function, and cannot achieve the function of the risk removing diamond 204 required by the present invention. As shown in FIG. 2, the waterjet device 22 includes four nozzle devices 220, and the nozzle device 220 can control the high pressure fluid 23 (indicated by a dotted arrow in the figure) The abrasive particles 203 are polished toward the surface of the finisher 20 at different angles at the same time, so that the pressures at the respective points acting on the abrasive particles 203 are also different, which promotes the twin crystal structure, the internal crack structure or the bonding layer coverage ratio. Too low a risk diamond 204 can remove the risk diamond 204 from the bonding layer 202 on the substrate 201 to avoid scratching and damage to the polishing pad by the risk diamond 204 during chemical mechanical polishing.

實施例3 Example 3

請參考圖3,圖3係本發明實施例3之高品質磨料之化學機械研磨修整器之裝置示意圖。實施例3與前述實施例1所述之高品質磨料之化學機械研磨修整器10之裝置大致相同,其不同之處在於,實施例1之水刀裝置12為一固定式水刀,使該高壓流體13藉由固定之水刀裝置12或噴嘴裝置120以作用於該些研磨顆粒103之固定位置,而實施例3之該水刀裝置32為一旋轉式水刀,使該高壓流體33藉由持續旋轉之水刀裝置32或噴嘴裝置320以作用於該些研磨顆粒303之非固定位置。如圖3所示,該水刀裝置32係為一旋轉式水刀,使該高壓流體33藉由持續旋轉之水刀裝置32或噴嘴裝置320以作用於化學機械研磨修整器30表面之該些研磨顆粒303之非固定位置,其中,該水刀裝置32之轉速為10rpm至1050rpm,並可依據使用者需要而任意變化其轉速。由於高壓流體33作用於該些研磨顆粒303之非固定位置,促使具有雙晶結構、內裂結構或結合層包覆率過低之風險鑽石304更容易由基板301上之結合層302將風險鑽石304去除,以 縮短高壓流體33作用於該些研磨顆粒304的處理時間,並有效地去除化學機械研磨修整器30上之風險鑽石304,進而提高拋光墊的使用壽命。 Please refer to FIG. 3. FIG. 3 is a schematic diagram of a chemical mechanical polishing dresser of a high quality abrasive according to Embodiment 3 of the present invention. Embodiment 3 is substantially the same as the apparatus of the high-quality abrasive chemical mechanical polishing conditioner 10 described in the foregoing Embodiment 1, except that the waterjet device 12 of Embodiment 1 is a fixed waterjet to make the high pressure The fluid 13 is applied to the fixed position of the abrasive particles 103 by the fixed waterjet device 12 or the nozzle device 120, and the waterjet device 32 of the third embodiment is a rotary waterjet, so that the high pressure fluid 33 is used. The water knife device 32 or the nozzle device 320 is continuously rotated to act on the non-fixed positions of the abrasive particles 303. As shown in FIG. 3, the waterjet device 32 is a rotary waterjet such that the high pressure fluid 33 acts on the surface of the chemical mechanical polishing conditioner 30 by continuously rotating the waterjet device 32 or the nozzle device 320. The non-fixed position of the abrasive particles 303, wherein the water jet device 32 rotates at a speed of 10 rpm to 1050 rpm, and can be arbitrarily changed according to the needs of the user. Since the high pressure fluid 33 acts on the non-fixed position of the abrasive particles 303, the risk of having a twin crystal structure, an internal crack structure, or a low adhesion ratio of the bonding layer is less likely to be caused by the bonding layer 302 on the substrate 301. 304 removed to The processing time of the high pressure fluid 33 acting on the abrasive particles 304 is shortened, and the risk diamond 304 on the chemical mechanical polishing conditioner 30 is effectively removed, thereby increasing the service life of the polishing pad.

於前述本發明之高品質磨料之化學機械研磨修整器中,該水刀裝置可依據使用者需求而任意變化,例如,噴嘴裝置之數目、噴嘴裝置之噴嘴孔徑、高壓流體朝向該些研磨顆粒的角度、固定機構或旋轉機構設計、利用升降機構調整水刀裝置及化學機械研磨修整器之間距,此外,更可經由調整旋轉機構之轉速、高壓流體作用於該些研磨顆粒之壓力、及輸送裝置之移動速度等各種參數,以達到符合使用者需求或符合對該些研磨顆粒之品質要求;因此,本發明之高品質磨料之化學機械研磨修整器可有效地用以去除研磨顆粒中的風險鑽石,以避免風險鑽石在化學機械研磨過程中對於拋光墊產生的刮傷及破壞。 In the above-mentioned high-quality abrasive chemical mechanical polishing dresser of the present invention, the waterjet device can be arbitrarily changed according to user requirements, for example, the number of nozzle devices, the nozzle aperture of the nozzle device, and the high-pressure fluid toward the abrasive particles. Angle, fixing mechanism or rotating mechanism design, adjusting the distance between the water jet device and the chemical mechanical polishing dresser by using the lifting mechanism, and further, adjusting the rotation speed of the rotating mechanism, the pressure of the high pressure fluid to act on the abrasive particles, and the conveying device Various parameters such as moving speed to meet user requirements or meet the quality requirements of the abrasive particles; therefore, the high quality abrasive chemical mechanical polishing dresser of the present invention can effectively remove the risk diamonds in the abrasive particles. To avoid the scratches and damage to the polishing pad caused by the risk diamond during the chemical mechanical grinding process.

上述實施例僅係為了方便說明而舉例而已,本發明所主張之權利範圍自應以申請專利範圍所述為準,而非僅限於上述實施例。 The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

10‧‧‧化學機械研磨修整器 10‧‧‧Chemical mechanical polishing dresser

11‧‧‧輸送裝置 11‧‧‧Conveyor

12‧‧‧水刀裝置 12‧‧‧Waterjet device

120‧‧‧噴嘴裝置 120‧‧‧Nozzle device

13‧‧‧高壓流體 13‧‧‧High pressure fluid

14‧‧‧升降機構 14‧‧‧ Lifting mechanism

Claims (17)

一種高品質磨料之化學機械研磨修整器,包括:一基板;一結合層,該結合層係設置於該基板上;以及複數個研磨顆粒,該些研磨顆粒係埋設於該結合層,且該些研磨顆粒藉由該結合層以固定於該基板上;其中,該高品質磨料之化學機械研磨修整器係經由一輸送裝置移動通過一水刀裝置及一高壓流體,且該高壓流體透過該水刀裝置作用於該些研磨顆粒,用以去除該些研磨顆粒內所含有之一個或複數個風險鑽石;該風險鑽石係具有一雙晶結構、一內裂結構、或結合層包覆率過低之鑽石;該水刀裝置係包含有一個或複數個噴嘴裝置;該些噴嘴裝置係形成不同的噴射角度。 A high-quality abrasive chemical mechanical polishing dresser comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles embedded in the bonding layer, and the plurality of abrasive particles are embedded in the bonding layer The abrasive particles are fixed to the substrate by the bonding layer; wherein the high-quality abrasive chemical mechanical polishing conditioner moves through a water jet device and a high pressure fluid through a conveying device, and the high pressure fluid passes through the water knife The device acts on the abrasive particles to remove one or a plurality of risk diamonds contained in the abrasive particles; the risk diamond has a twin crystal structure, an internal crack structure, or a low coverage ratio of the bonding layer Diamond; the waterjet device includes one or more nozzle devices; the nozzle devices form different spray angles. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該水刀裝置係包含有3個至5個噴嘴裝置。 The chemical mechanical polishing conditioner of the high quality abrasive according to the first aspect of the invention, wherein the waterjet device comprises three to five nozzle devices. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該些噴嘴裝置係具有相同的噴嘴孔徑。 A chemical mechanical polishing conditioner for high quality abrasives according to claim 1, wherein the nozzle devices have the same nozzle aperture. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該些噴嘴裝置係具有不同的噴嘴孔徑。 A chemical mechanical polishing conditioner for high quality abrasives according to claim 1, wherein the nozzle devices have different nozzle apertures. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該水刀裝置係為一固定機構,使該高壓流體作用於該些研磨顆粒之固定位置。 The chemical mechanical polishing dresser of the high quality abrasive according to claim 1, wherein the water jet device is a fixing mechanism for applying the high pressure fluid to the fixed position of the abrasive particles. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該水刀裝置係為一旋轉機構,使該高壓流體作用於該些研磨顆粒之非固定位置。 A chemical mechanical polishing dresser for high quality abrasive according to claim 1, wherein the water jet device is a rotating mechanism that causes the high pressure fluid to act on the non-fixed position of the abrasive particles. 如申請專利範圍第6項所述之高品質磨料之化學機械研磨修整器,其中,該旋轉機構之轉速為10rpm至1050rpm。 The CMP polishing dresser of the high quality abrasive according to claim 6, wherein the rotating mechanism has a rotational speed of 10 rpm to 1050 rpm. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該高壓流體作用於該些研磨顆粒之壓力為1,000psi至32,000psi。 A chemical mechanical polishing conditioner for high quality abrasives according to claim 1, wherein the high pressure fluid is applied to the abrasive particles at a pressure of from 1,000 psi to 32,000 psi. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該輸送裝置之移動速度為10毫米/分鐘至1,000毫米/分鐘。 A chemical mechanical polishing dresser of the high quality abrasive according to claim 1, wherein the conveying speed of the conveying device is from 10 mm/min to 1,000 mm/min. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該水刀裝置具有一升降機構,用以調整該水刀裝置及該高品質磨料修整器之間距。 The chemical mechanical polishing dresser of the high quality abrasive according to claim 1, wherein the water jet device has a lifting mechanism for adjusting the distance between the water jet device and the high quality abrasive dresser. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該高壓流體係為純水、超純水、非腐蝕性流體。 The chemical mechanical polishing dresser of high quality abrasive according to claim 1, wherein the high pressure flow system is pure water, ultrapure water, and non-corrosive fluid. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該些研磨顆粒係為人造鑽石、天然鑽石、多晶鑽石、或立方氮化硼。 A chemical mechanical polishing dresser for high quality abrasive according to claim 1, wherein the abrasive particles are synthetic diamonds, natural diamonds, polycrystalline diamonds, or cubic boron nitride. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該些研磨顆粒之粒徑係為30微米至600微米。 The CMP abrasive dresser of the high quality abrasive according to claim 1, wherein the abrasive particles have a particle size of from 30 micrometers to 600 micrometers. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該結合層之組成係為陶瓷材料、硬焊材料、電鍍材料、金屬材料、或高分子材料。 The chemical mechanical polishing dresser of the high quality abrasive according to claim 1, wherein the bonding layer is composed of a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. 如申請專利範圍第14項所述之高品質磨料之化學機械研磨修整器,其中,該硬焊材料係至少一選自由鐵、鈷、鎳、鉻、錳、矽、鋁、及其組合所組成之群組。 The chemical mechanical polishing dresser of the high quality abrasive according to claim 14, wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, cerium, aluminum, and combinations thereof. Group of. 如申請專利範圍第14項所述之高品質磨料之化學機械研磨修整器,其中,該高分子材料係為環氧樹脂、聚酯樹脂、聚丙烯酸樹脂、酚醛樹脂。 The chemical mechanical polishing dresser of the high-quality abrasive according to claim 14, wherein the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenol resin. 如申請專利範圍第1項所述之高品質磨料之化學機械研磨修整器,其中,該基板係為不鏽鋼基板、模具鋼基板、金屬合金基板、陶瓷基板、高分子基板或其組合。 The CMP polishing dresser of the high quality abrasive according to the first aspect of the invention, wherein the substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, a polymer substrate or a combination thereof.
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