CN101970595B - A chemical mechanical polishing liquid - Google Patents
A chemical mechanical polishing liquid Download PDFInfo
- Publication number
- CN101970595B CN101970595B CN200980103153.6A CN200980103153A CN101970595B CN 101970595 B CN101970595 B CN 101970595B CN 200980103153 A CN200980103153 A CN 200980103153A CN 101970595 B CN101970595 B CN 101970595B
- Authority
- CN
- China
- Prior art keywords
- polishing fluid
- acid
- polishing
- triazole
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Abstract
A chemical mechanical polishing liquid which contains abrasive particles and water. The said polishing liquid further contains biguanides and azoles. The coexistence of biguanides and azoles produces synergistic effect and results in a significantly higher removal rate of polycrystal silicon.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid in the semiconductor fabrication process.
Technical background
Along with the development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, it is particularly crucial that the planarization of conductive layer and insulating medium layer becomes.By IBM Corporation's twentieth century eighties pioneering cmp (CMP) technology be considered to the effective means of present overall planarization.
Cmp (CMP) is combined into by chemical action and mechanical effect and two kinds of effects.Its equipment is usually by a grinding stage with polishing pad (pad) (polishing table), and a grinding head (carrier) that is used for carries chips (wafer) forms.Wherein grinding head is fixed chip, and then the front with chip is pressed on the grinding pad.When carrying out cmp, grinding head moves or along the direction of motion the same with grinding stage rotation at polishing pad (pad) Linear.Meanwhile, the slurries (slurry) that contain abrasive are dripped on the polishing pad (pad), and are tiled on the polishing pad (pad) because of centrifugation.Overall planarization is realized in chip (wafer) surface under the dual function of machinery and chemistry.
According to the difference of chemically machinery polished particular problem to be solved, the removal speed (removal rate) of polysilicon (Poly silicon) there are two kinds of different requirements.
A kind of requirement is the removal speed that will reduce polysilicon, as: US 20050130428 has reported a kind of homopolymerization of oxyethane or propylene oxide or polishing fluid of multipolymer of containing, and removes speed to suppress polysilicon.The hydrophobic group of polymkeric substance is considered to be adsorbed on the polysilicon surface, has formed passivation layer, thereby has reduced the removal speed of polysilicon.
Another kind of is the removal speed that improves polysilicon:
US2002032987 discloses a kind of with the polishing fluid of hydramine as additive, to improve the removal speed (removal rate) of polysilicon (Poly silicon), the wherein preferred 2-of additive (dimethylamino)-2-methyl isophthalic acid-propyl alcohol.
US2002151252 discloses a kind of polishing fluid that contains the complexing agent with a plurality of carboxylic acid structures, is used for improving polysilicon and removes speed, and wherein preferred complexing agent is EDTA (ethylenediamine tetraacetic acid (EDTA)) and DTPA (diethyl pentetic acid).
EP1072662 discloses a kind of organic polishing fluid that contains lone-pair electron and two key generation delocalization structures, and to improve the removal speed (removal rate) of polysilicon (Poly silicon), preferred compound is compound and the salt thereof of guanidine class.
US2006014390 discloses a kind of polishing fluid of the removal speed for improving polysilicon, and it comprises weight percent is that 4.25%～18.5% abrasive and weight percent are 0.05%～1.5% additive.Wherein additive mainly is selected from the organic basess such as quaternary ammonium salt, quaternary amine alkali and thanomin.In addition, this polishing fluid also comprises nonionic surface active agent, for example the homopolymerization of ethylene glycol or propylene glycol or copolymerization product.
Brief summary of the invention
Technical problem to be solved by this invention provides a kind of chemical mechanical polishing liquid that polysilicon is removed speed that significantly improves.
Polishing fluid of the present invention contains abrasive grains and water, and it also contains biguanide compound and nitrogen azole compounds simultaneously.
Wherein, described biguanide compound is better is selected from biguanides, N1,N1-Dimethylbiguanide, phenformin, Moroxydine, 1, one or more in the acid salt of 1 '-hexyl two [5-(rubigan) biguanides] and above-claimed cpd.What described acid was better is hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.What the content of described biguanide compound was better is mass percent 0.01～7%.
Wherein, described nitrogen azole compounds is better is selected from triazole and tetrazole and the derivative thereof one or more.What the content of described nitrogen azole compounds was better is mass percent 0.01～15%.
Wherein, described abrasive grains is better is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.What the content of described abrasive grains was better is mass percent 0.1～30%.That the particle diameter of described abrasive grains is better is 20～150nm, and that better is 30～120nm.
Polishing fluid of the present invention also can contain this area conventional additives, such as pH adjusting agent and/or dispersion agent.Described pH adjusting agent can be selected from one or more in NaOH, KOH, ammonia and the organic bases; Optional in polyvinyl alcohol, polyacrylic acid, polyacrylamide and polyethylene oxide one or more of described dispersion agent; What the content of described dispersion agent was better is mass percent 0.01%～1%.
What the pH scope of polishing fluid of the present invention was better is 8～12.
Mentioned component is simply evenly mixed, be adjusted to suitable pH value with pH adjusting agent, leave standstill and can make polishing fluid of the present invention.Agents useful for same of the present invention and raw material be commercially available getting all.
Positive progressive effect of the present invention is: the biguanides material that contains simultaneously in the polishing fluid of the present invention and nitrogen azole material have synergy, can significantly improve the removal speed of polysilicon.
Summary of the invention
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～11
Table 1 has provided polishing fluid 1～11 of the present invention, and by prescription in the table, each composition is simply evenly mixed, and surplus is water, is adjusted to suitable pH value with pH adjusting agent, leaves standstill and can make each polishing fluid in 30 minutes.
Table 1 polishing fluid embodiment 1～11 prescription of the present invention
Effect embodiment
Table 2 has provided contrast polishing example 8 and polishing fluid of the present invention 1～6, and by prescription in the table, each composition is simply evenly mixed, and surplus is water, is adjusted to pH=11 with Tetramethylammonium hydroxide, leaves standstill can make each polishing fluid in 30 minutes.Each polishing fluid is used for polishing polycrystalline silicon.Polishing condition is: polishing machine platform is Logitech (Britain) 1PM52 type, 12 inches politex polishing pads (pad), 4cm*4cm square Wafer, grinding pressure 3psi, 70 rev/mins of grinding stage (polishing table) rotating speeds, 150 rev/mins of grinding head (carrier) rotation rotating speeds, polishing fluid rate of addition 100ml/min.Polish results sees Table 2.
Table 2 contrast polishing example 8 and polishing fluid of the present invention 1～6 prescription and polysilicon are removed speed
By contrast polishing fluid 2,3,4 show: along with improving constantly of Walaphage content, the removal speed of polysilicon trend is saturated, and maximum value is about 2390A/min.Continue to increase Walaphage content, the removal speed that improves polysilicon is not had help.
By contrast polishing fluid 5,6,7 show: along with improving constantly of 1,2,4-triazole (TAZ) content, the removal speed of polysilicon trend is saturated, and maximum value is about 2163A/min.Continue to increase the content of TAZ, the removal speed that improves polysilicon is not had help.
Shown by polishing fluid 1～5 of the present invention and contrast polishing fluid 1,5～7: biguanides material and triazole exist obvious synergy, can improve significantly the removal speed of polysilicon.
Shown by polishing fluid 6 of the present invention and contrast polishing fluid 8: biguanides material and tetrazole exist obvious synergy, can improve significantly the removal speed of polysilicon.
Claims (9)
1. chemical mechanical polishing liquid, it contains abrasive grains and water, it is characterized in that: it also contains biguanide compound and nitrogen azole compounds simultaneously, and wherein said nitrogen azole compounds is one or more in triazole and tetrazole and the derivative thereof, is 1,2,4-triazole, 3-amino-1,2,4-triazole, 5-carboxyl-3-amino 1, in 2,4-triazole and the 5-aminotetrazole one or more.
2. polishing fluid as claimed in claim 1, it is characterized in that: described biguanide compound is selected from biguanides, N1,N1-Dimethylbiguanide, phenformin, Moroxydine, 1, one or more in the acid salt of 1 '-hexyl two [5-(rubigan) biguanides] and above-claimed cpd.
3. polishing fluid as claimed in claim 2, it is characterized in that: described acid is hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.
4. polishing fluid as claimed in claim 1, it is characterized in that: the content of described biguanide compound is mass percent 0.01～7%.
5. polishing fluid as claimed in claim 1, it is characterized in that: the content of described nitrogen azole compounds is mass percent 0.01～15%.
6. polishing fluid as claimed in claim 1, it is characterized in that: described abrasive grains is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.
7. polishing fluid as claimed in claim 1, it is characterized in that: the content of described abrasive grains is mass percent 0.1～30%.
8. polishing fluid as claimed in claim 1, it is characterized in that: the particle diameter of described abrasive grains is 30～120nm.
9. polishing fluid as claimed in claim 1, it is characterized in that: the pH scope of described polishing fluid is 8～12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200980103153.6A CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100332603A CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
| CN200810033260.3 | 2008-01-30 | ||
| CN200980103153.6A CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
| PCT/CN2009/000071 WO2009097737A1 (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101970595A CN101970595A (en) | 2011-02-09 |
| CN101970595B true CN101970595B (en) | 2013-05-01 |
Family
ID=40945040
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100332603A Pending CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
| CN200980103153.6A Active CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100332603A Pending CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101497765A (en) |
| WO (1) | WO2009097737A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5774283B2 (en) * | 2010-04-08 | 2015-09-09 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method |
| CN102477261B (en) * | 2010-11-26 | 2015-06-17 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN102533119A (en) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid containing nitrogen-containing amine compounds |
| CN103945983A (en) * | 2011-11-25 | 2014-07-23 | 福吉米株式会社 | Method for polishing alloy material and method for producing alloy material |
| CN104371550B (en) * | 2013-08-14 | 2018-02-09 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid for being used to polish silicon materials |
| CN104371552B (en) * | 2013-08-14 | 2017-09-15 | 安集微电子（上海）有限公司 | Application of the silicon-containing organic compound in extension chemical mechanical polishing liquid in abrasive grains stability |
| CN104371553B (en) * | 2013-08-14 | 2017-10-13 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and application |
| CN111378973A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and application thereof |
| CN111378372B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
| KR20220044500A (en) * | 2019-08-09 | 2022-04-08 | 바스프 에스이 | Compositions and methods for inhibiting tungsten etch |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1644644A (en) * | 2003-12-22 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for low downforce pressure polishing of copper |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60332881D1 (en) * | 2002-04-30 | 2010-07-15 | Hitachi Chemical Co Ltd | Polish and polishing process |
| JP2004031443A (en) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | Polishing solution and polishing method |
| US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
-
2008
- 2008-01-30 CN CNA2008100332603A patent/CN101497765A/en active Pending
-
2009
- 2009-01-19 WO PCT/CN2009/000071 patent/WO2009097737A1/en active Application Filing
- 2009-01-19 CN CN200980103153.6A patent/CN101970595B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1644644A (en) * | 2003-12-22 | 2005-07-27 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for low downforce pressure polishing of copper |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101497765A (en) | 2009-08-05 |
| CN101970595A (en) | 2011-02-09 |
| WO2009097737A1 (en) | 2009-08-13 |
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