CN101440258A - Chemico-mechanical polishing solution for polysilicon - Google Patents
Chemico-mechanical polishing solution for polysilicon Download PDFInfo
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- CN101440258A CN101440258A CNA2007101708099A CN200710170809A CN101440258A CN 101440258 A CN101440258 A CN 101440258A CN A2007101708099 A CNA2007101708099 A CN A2007101708099A CN 200710170809 A CN200710170809 A CN 200710170809A CN 101440258 A CN101440258 A CN 101440258A
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- 238000005498 polishing Methods 0.000 title claims abstract description 102
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 title claims description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 60
- 239000012530 fluid Substances 0.000 claims description 50
- 239000000377 silicon dioxide Substances 0.000 claims description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims description 30
- 229960001866 silicon dioxide Drugs 0.000 claims description 29
- 239000002253 acid Substances 0.000 claims description 19
- -1 biguanide compound Chemical class 0.000 claims description 16
- 150000003839 salts Chemical class 0.000 claims description 14
- 239000006061 abrasive grain Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 12
- 229940123208 Biguanide Drugs 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 150000004283 biguanides Chemical class 0.000 claims description 5
- 238000006116 polymerization reaction Methods 0.000 claims description 5
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- VAZJLPXFVQHDFB-UHFFFAOYSA-N 1-(diaminomethylidene)-2-hexylguanidine Polymers CCCCCCN=C(N)N=C(N)N VAZJLPXFVQHDFB-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229920002413 Polyhexanide Polymers 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- KJHOZAZQWVKILO-UHFFFAOYSA-N N-(diaminomethylidene)-4-morpholinecarboximidamide Chemical compound NC(N)=NC(=N)N1CCOCC1 KJHOZAZQWVKILO-UHFFFAOYSA-N 0.000 claims description 2
- 239000000174 gluconic acid Substances 0.000 claims description 2
- 235000012208 gluconic acid Nutrition 0.000 claims description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 claims description 2
- 229960005389 moroxydine Drugs 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- ICFJFFQQTFMIBG-UHFFFAOYSA-N phenformin Chemical compound NC(=N)NC(=N)NCCC1=CC=CC=C1 ICFJFFQQTFMIBG-UHFFFAOYSA-N 0.000 claims description 2
- 229960003243 phenformin Drugs 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000012467 final product Substances 0.000 description 8
- OETHQSJEHLVLGH-UHFFFAOYSA-N metformin hydrochloride Chemical compound Cl.CN(C)C(=N)N=C(N)N OETHQSJEHLVLGH-UHFFFAOYSA-N 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000003082 abrasive agent Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QMNAQPMXDMLOLD-UHFFFAOYSA-N 6-methyl-4-oxo-5,6-dihydrothieno[2,3-b]thiopyran-2-sulfonamide Chemical compound S1C(C)CC(=O)C2=C1SC(S(N)(=O)=O)=C2 QMNAQPMXDMLOLD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229960001753 phenformin hydrochloride Drugs 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a chemical-mechanical polishing solution for polycrystalline silicon, which contains grinding particles, water and at least one compound with more than two groups shown in the figure. The polishing solution can improve the removal rate of the polycrystalline silicon and the polishing selection ratio of the polycrystalline silicon to dielectric materials, and has better application prospect in the field of wafer manufacture of semiconductors and so on.
Description
Technical field
The present invention relates to a kind of polishing fluid, relate in particular to a kind of polishing polycrystalline silicon chemical mechanical polishing liquid that is used for.
Background technology
In unicircuit was made, the standard of interconnection technique deposited one deck again improving above one deck, make to have formed irregular pattern at substrate surface.A kind of flattening method that uses in the prior art is exactly chemically machinery polished (CMP), and CMP technology just is to use a kind of mixture and polishing pad that contains abrasive material to go to the polished silicon slice surface.In typical cmp method, substrate is directly contacted with rotating polishing pad, exert pressure at substrate back with loads.During polishing, pad and operator's console rotation, the power that keeps down at substrate back is applied to abrasive material and chemically reactive solution (being commonly referred to polishing fluid or polishing slurries) on the pad simultaneously, and this polishing fluid begins to carry out polishing process with the film generation chemical reaction that is polishing.
For the polishing of polysilicon, be mainly used in two kinds of chips at present, a kind of is DRAM, a kind of be Flash. in the former application, mainly only relate to polishing to polysilicon.Polysilicon polishing speed of having relatively high expectations and lower dielectric layer (as PETEOS) polishing speed.The polishing fluid of polishing dielectric layer at present commonly used comes polishing polycrystalline silicon, and this polishing fluid uses CeO2 or SiO2 as abrasive material, as the dielectric layer on blocking layer usually can along with polysilicon together by jettisoning.Patent documentation CN 1315989A provides a kind of chemical mechanical polishing slurry and its using method, and it comprises the aqueous solution of at least a abrasive material and at least a hydramine, the polysilicon of this slurry to the polishing selectivity of insulation layer greater than about 100.Patent documentation US2003/0216003 A1 and US2004/0163324 A1 disclose a kind of Chemico-mechanical polishing slurry for polysilicon and purposes.This polishing fluid comprises at least a solvent, abrasive material and containing-N (OH) ,-NH (OH) or-NH
2(OH) compound of group uses the polysilicon of this slurry and the polishing of silicon-dioxide to select than being 50:1～300:1.
Summary of the invention
Technical problem to be solved by this invention is for satisfying the requirement of polysilicon chip glossing, has higher polysilicon and removes the polishing fluid that speed and higher polysilicon/dielectric materials are removed the rate selection ratio and provide a kind of.
Chemico-mechanical polishing slurry for polysilicon of the present invention contains abrasive grains and water, also contains at least aly to have two or more
The compound of group.
Wherein, described have two or more
What the compound of group was preferable is biguanide compound or its acid salt, or poly-guanidine compound or its acid salt.What the polymerization degree of described poly-guanidine compound or its acid salt was preferable is 2～100.What described acid was preferable is hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.What described biguanide compound or its acid salt were preferable is biguanides, N1,N1-Dimethylbiguanide, phenformin, 1, the two [acid salt of 5-(rubigan) biguanides, Moroxydine, above-claimed cpd or the 6-amidino groups-2-naphthyl 4 guanidine benzoate metilsulfates of 1 '-hexyl; What described poly-guanidine or its acid salt were preferable is polyhexamethylene guanidine, poly hexamethylene biguanide, poly-(hexa-methylene bi-cyanoguanidines-hexamethylene-diamine) or its acid salt.Described have two or more
What the content of the compound of group was preferable is mass percent 0.0001～20%, and better is mass percent 0.001～15%.
Wherein, one or more in the silicon-dioxide that is selected from silicon-dioxide, aluminum oxide, adulterated al that described abrasive grains is preferable, the silicon-dioxide of aluminium coating, cerium dioxide, titanium dioxide and the polymer abrasive grains.That the particle diameter of abrasive grains is preferable is 20～150nm, and that better is 30～120nm.What the content of abrasive grains was preferable is mass percent 0.1～30%.
Among the present invention, described have two or more
The compound of group all can improve the polishing speed of polysilicon under acid and alkaline condition, preferred pH scope is 8～11.
Polishing fluid of the present invention can also contain this area conventional additives such as pH regulator agent, viscosity modifier and defoamer, other characteristic of regulating polishing fluid.The simple uniform mixing of each composition of the present invention can be made polishing fluid of the present invention.Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: polishing fluid of the present invention all can improve the polishing speed of polysilicon and ratio is selected in the polishing of polysilicon/dielectric layer (as PETEOS) under acid and alkaline condition.
Embodiment
Mode below by embodiment further specifies the present invention, does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～6
Provided the embodiment 1～6 of the chemical mechanical polishing liquid of polishing polycrystalline silicon in the table 1, following polishing fluid simply mixes by the component of giving in the table and gets final product, and water is surplus.Being adjusted to required pH value with pH regulator agent well known in the art (as KOH and nitric acid) gets final product.
Table 1 Chemico-mechanical polishing slurry for polysilicon embodiment 1～6
| Embodiment | The wt% abrasive grains | The wt% additive | pH |
| 1 | 0.1% cerium dioxide (50nm) | 0.01% Polyhaxemethylenguanidine Hydrochloride (polymerization degree is 100) | 5 |
| 2 | The silicon-dioxide of 15% aluminium coating (70nm) | 7% phenformin hydrochloride | 2 |
| 3 | 10% polymethylmethacrylate (150nm) | 0.001% phosphoric acid poly hexamethylene biguanide (polymkeric substance is 100) | 11 |
| 4 | 8% aluminium sesquioxide (30nm) | 0.0001% poly-(hexa-methylene bi-cyanoguanidines-hexamethylene-diamine) hydrochloride (polymerization degree 100) | 12 |
| 5 | 10% titanium dioxide (150nm) | 2% biguanides | 10 |
| 6 | The silicon-dioxide of 30% adulterated al (20nm) | 10%1, two [5-(rubigan) the biguanides acetate of 1 '-hexyl | 8 |
Effect embodiment 1
Provided polishing fluid 1～11 of the present invention and contrast polishing fluid 1 and 2 in the table 2, following polishing fluid simply mixes by the component of giving in the table and gets final product, and water is surplus.Being adjusted to required pH value with pH regulator agent well known in the art gets final product.Dilute with water before using.
Adopt above-mentioned polishing fluid to polish, the processing parameter of polishing is: overdraft 4psi, the rotating speed 70rpm of polishing disk (14 inches of diameters), rubbing head rotating speed 80rpm, polishing slurries flow velocity 200ml/min, polishing pad are politex, and polishing machine is Logitech LP50.The result is as shown in table 2.
Composition, pH value, the removal rate of polysilicon of table 2 polishing fluid 1～11 and contrast polishing fluid 1,2
By table 2 as seen, compare with contrast polishing fluid 1,2, polishing fluid of the present invention has added and has had two or more
Under acid and alkaline condition, all can improve the polishing speed of polysilicon behind the compound of group.
Effect embodiment 2
Provided polishing fluid 12～19 of the present invention and contrast polishing fluid 3 in the table 3, following polishing fluid simply mixes by the component of giving in the table and gets final product, and water is surplus.Being adjusted to required pH value with pH regulator agent well known in the art gets final product.
Adopt above-mentioned polishing fluid to polish, the processing parameter of polishing is: overdraft 4psi, the rotating speed 70rpm of polishing disk (14 inches of diameters), rubbing head rotating speed 80rpm, polishing slurries flow velocity 200ml/min, polishing pad are politex, and polishing machine is Logitech LP50.The result is as shown in table 3.
The removal speed of composition, pH value, polysilicon and the silicon-dioxide (PETEOS) of table 3 polishing fluid 12～19 and contrast polishing fluid 3 and selection ratio
| Polishing fluid | The wt% abrasive grains | The wt% additive | pH | Polysilicon is removed speed (A/min) | Silicon-dioxide is removed speed (A/min) | Select ratio |
| Contrast 3 | 1% silicon-dioxide (100nm) | \ | 10.5 | 1338 | 27 | 50 |
| 12 | 1% silicon-dioxide (100nm) | 0.001% Walaphage | 10.5 | 2169 | 26 | 83 |
| 13 | 1% silicon-dioxide (100nm) | 0.01% Walaphage | 10.5 | 2685 | 27 | 99 |
| 14 | 1% silicon-dioxide (100nm) | 0.1% Walaphage | 10.5 | 3891 | 27 | 144 |
| 15 | 1% silicon-dioxide (100nm) | 1% Walaphage | 10.5 | 4725 | 30 | 158 |
| 16 | 1% silicon-dioxide (100nm) | 5% Walaphage | 10.5 | 4461 | 33 | 135 |
| 17 | 1% silicon-dioxide (100nm) | 10% Walaphage | 10.5 | 3685 | 32 | 115 |
| 18 | 1% silicon-dioxide (100nm) | 15% Walaphage | 10.5 | 3011 | 34 | 89 |
| 19 | 1% silicon-dioxide (100nm) | 20% Walaphage | 10.5 | 2582 | 34 | 76 |
By table 3 as seen, compare with contrast polishing fluid 3, polishing fluid of the present invention has the polishing speed of higher polysilicon and ratio is selected in the polishing of silicon-dioxide.
Effect embodiment 3
Provided polishing fluid 20～21 of the present invention and contrast polishing fluid 4 and 5 in the table 4, following polishing fluid simply mixes by the component of giving in the table and gets final product, and water is surplus.Being adjusted to required pH value with pH regulator agent well known in the art gets final product.Dilute with water before using.
Adopt above-mentioned polishing fluid to polish, the processing parameter of polishing is: overdraft 4psi, the rotating speed 70rpm of polishing disk (14 inches of diameters), rubbing head rotating speed 80rpm, polishing slurries flow velocity 200ml/min, polishing pad are politex, and polishing machine is Logitech LP50.The result is as shown in table 3.
The removal speed of composition, pH value, polysilicon and the silicon-dioxide (PETEOS) of table 4 polishing fluid 20～21 and contrast polishing fluid 4,5 and selection ratio
| Polishing fluid | The wt% abrasive grains | The wt% additive | pH | Polysilicon is removed speed (A/min) | Silicon-dioxide is removed speed (A/min) | Select ratio |
| Contrast 4 | 1% silicon-dioxide (100nm) | 0.01% Guanidinium carbonate | 10.2 | 1575 | 27 | 58 |
| Contrast 5 | 1% silicon-dioxide (100nm) | 0.01% TBAH | 10.2 | 1838 | 27 | 68 |
| 20 | 1% silicon-dioxide (100nm) | 0.01% nitric acid biguanides | 10.2 | 2596 | 27 | 96 |
| 21 | 1% silicon-dioxide (100nm) | 0.01% polyhexamethylene guanidine phosphoric acid salt (polymerization degree is 30) | 10.2 | 2885 | 27 | 107 |
Compare with 21 with polishing fluid 20 of the present invention by contrast polishing fluid 4 in the table 4, have more than two
Compound more effectively improve the polishing speed of polysilicon and ratio selected in the polishing of silicon-dioxide than compound with this group.Compare with contrast polishing fluid 5, polishing fluid 20 of the present invention and 21 has the polishing speed of higher polysilicon and ratio is selected in the polishing of silicon-dioxide.
Claims (10)
1. a Chemico-mechanical polishing slurry for polysilicon contains abrasive grains and water, it is characterized in that: also contain and at least aly have two or more
The compound of group.
2. polishing fluid as claimed in claim 1 is characterized in that: described have two or more
The compound of group is biguanide compound or its acid salt, or poly-guanidine compound or its acid salt.
3. polishing fluid as claimed in claim 2 is characterized in that: the polymerization degree of described poly-guanidine compound or its acid salt is 2～100.
4. as claim 2 or 3 described polishing fluids, it is characterized in that: described acid is hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.
5. polishing fluid as claimed in claim 2, it is characterized in that: described biguanide compound or its acid salt are biguanides, N1,N1-Dimethylbiguanide, phenformin, 1, the two [acid salt of 5-(rubigan) biguanides, Moroxydine, above-claimed cpd or the 6-amidino groups-2-naphthyl 4 guanidine benzoate metilsulfates of 1 '-hexyl; Described poly-guanidine compound or its acid salt are polyhexamethylene guanidine, poly hexamethylene biguanide, poly-(hexa-methylene bi-cyanoguanidines-hexamethylene-diamine) or its acid salt.
6. polishing fluid as claimed in claim 1 is characterized in that: described have two or more
The content of the compound of group is mass percent 0.0001～20%.
7. polishing fluid as claimed in claim 6 is characterized in that: described have two or more
The content of the compound of group is mass percent 0.001～15%.
8. polishing fluid as claimed in claim 1 is characterized in that: described abrasive grains is one or more in silicon-dioxide, cerium dioxide, titanium dioxide and the polymer abrasive grains of silicon-dioxide, aluminium coating of silicon-dioxide, aluminum oxide, adulterated al.
9. polishing fluid as claimed in claim 1 is characterized in that: the content of described abrasive grains is mass percent 0.1～30%.
10. polishing fluid as claimed in claim 1 is characterized in that: the pH value of described polishing fluid is 8～11.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101708099A CN101440258A (en) | 2007-11-22 | 2007-11-22 | Chemico-mechanical polishing solution for polysilicon |
| PCT/CN2008/001858 WO2009070969A1 (en) | 2007-11-22 | 2008-11-07 | A chemical-mechanical polishing liquid for polysilicon |
| CN200880117646.0A CN101868511B (en) | 2007-11-22 | 2008-11-07 | A chemical-mechanical polishing liquid for polysilicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101708099A CN101440258A (en) | 2007-11-22 | 2007-11-22 | Chemico-mechanical polishing solution for polysilicon |
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| Publication Number | Publication Date |
|---|---|
| CN101440258A true CN101440258A (en) | 2009-05-27 |
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| CNA2007101708099A Pending CN101440258A (en) | 2007-11-22 | 2007-11-22 | Chemico-mechanical polishing solution for polysilicon |
| CN200880117646.0A Active CN101868511B (en) | 2007-11-22 | 2008-11-07 | A chemical-mechanical polishing liquid for polysilicon |
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| WO (1) | WO2009070969A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011072495A1 (en) * | 2009-12-18 | 2011-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid |
| CN102108261A (en) * | 2009-12-25 | 2011-06-29 | 安集微电子（上海）有限公司 | Chemical and mechanical polishing solution |
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
| CN103945983A (en) * | 2011-11-25 | 2014-07-23 | 福吉米株式会社 | Method for polishing alloy material and method for producing alloy material |
| JP2014141667A (en) * | 2012-12-27 | 2014-08-07 | Sanyo Chem Ind Ltd | Polishing liquid for electronic material |
| CN114080437A (en) * | 2019-08-09 | 2022-02-22 | 巴斯夫欧洲公司 | Compositions and methods for inhibiting tungsten etching |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003218389A1 (en) * | 2002-03-25 | 2003-10-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tantalum barrier removal solution |
| JP2004031446A (en) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | Polishing solution and polishing method |
| JP2004031443A (en) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | Polishing solution and polishing method |
| US20050056810A1 (en) * | 2003-09-17 | 2005-03-17 | Jinru Bian | Polishing composition for semiconductor wafers |
| CN101045853A (en) * | 2006-03-31 | 2007-10-03 | 中国科学院半导体研究所 | Precision chemical mechnical polishing agent for semiconductor chip |
| US20090311947A1 (en) * | 2006-07-05 | 2009-12-17 | Dupont Aurproducts Nanomaterials Limited Company | Polishing Composition for Silicon Wafer and Polishing Method of Silicon Wafer |
| CN101280158A (en) * | 2007-04-06 | 2008-10-08 | 安集微电子（上海）有限公司 | Chemico-mechanical polishing slurry for polysilicon |
-
2007
- 2007-11-22 CN CNA2007101708099A patent/CN101440258A/en active Pending
-
2008
- 2008-11-07 CN CN200880117646.0A patent/CN101868511B/en active Active
- 2008-11-07 WO PCT/CN2008/001858 patent/WO2009070969A1/en active Application Filing
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011072495A1 (en) * | 2009-12-18 | 2011-06-23 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid |
| CN102108261A (en) * | 2009-12-25 | 2011-06-29 | 安集微电子（上海）有限公司 | Chemical and mechanical polishing solution |
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
| CN102212315B (en) * | 2010-04-08 | 2015-05-13 | 福吉米株式会社 | Polishing composition and polishing method |
| CN103945983A (en) * | 2011-11-25 | 2014-07-23 | 福吉米株式会社 | Method for polishing alloy material and method for producing alloy material |
| JP2014141667A (en) * | 2012-12-27 | 2014-08-07 | Sanyo Chem Ind Ltd | Polishing liquid for electronic material |
| CN114080437A (en) * | 2019-08-09 | 2022-02-22 | 巴斯夫欧洲公司 | Compositions and methods for inhibiting tungsten etching |
| CN114080437B (en) * | 2019-08-09 | 2023-10-27 | 巴斯夫欧洲公司 | Composition and method for inhibiting tungsten etching |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101868511B (en) | 2013-07-31 |
| WO2009070969A1 (en) | 2009-06-11 |
| CN101868511A (en) | 2010-10-20 |
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