CN106914815B - Grinding method of semiconductor silicon wafer - Google Patents
Grinding method of semiconductor silicon wafer Download PDFInfo
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- CN106914815B CN106914815B CN201510978842.9A CN201510978842A CN106914815B CN 106914815 B CN106914815 B CN 106914815B CN 201510978842 A CN201510978842 A CN 201510978842A CN 106914815 B CN106914815 B CN 106914815B
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- grinding
- silicon wafer
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- polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Abstract
The invention provides a grinding method of a semiconductor silicon wafer, which adopts a double-sided grinding process, and obtains a silicon grinding sheet with good surface smoothness and no tool marks, claws, scratches, cracks and the like on the surface by selecting proper technological parameters such as a grinding disc, grinding fluid, grinding pressure, grinding rotating speed and the like; surface machining precision: TTV is less than or equal to 1um, SFQR is less than or equal to 50nm, and Ra is less than or equal to 100 nm. In addition, the ceramic disc is used for replacing a cast iron disc, so that the introduction of metal ions is reduced, the subsequent processing amount of the silicon wafer can be reduced, the subsequent process (corrosion) time is shortened, the production efficiency is improved, the processing loss of the silicon wafer is reduced, and the utilization rate of the silicon wafer is improved.
Description
Technical Field
The invention relates to a grinding method of a semiconductor silicon wafer, in particular to control of metal ions, and belongs to the field of processing of monocrystalline silicon.
Background
With the rapid development of semiconductor devices, the requirements for monocrystalline silicon wafers are increasing. Since the main surface of the wafer is a surface on which a pattern of a device is drawn, it is necessary to avoid scratches and contamination of the main surface of the wafer as much as possible. Trace impurity elements introduced between elements in the whole production process of the silicon wafer may reduce the qualification rate of the chip. Specific contamination problems may lead to different defects of the semiconductor device, for example, transition metals and heavy metals (Fe, Cr, Ni, Cu, etc.) may shorten the life of the element or increase the dark current at which the element operates. As a raw material of a semiconductor device, metal ions on a silicon surface directly affect the yield of device processing.
The purpose of grinding the silicon wafer is to remove a surface mechanical stress damage layer having a depth of about 20 to 50um and impurity contamination such as various metal ions on the surface of the silicon wafer, which are generated by dicing in the dicing process, and to provide a flat surface of a certain geometric dimensional accuracy to the silicon wafer. At present, the silicon wafer grinding method mainly comprises double-sided grinding and double-sided grinding, but the double-sided grinding mainly aims at large-size (300 mm and above) monocrystalline silicon wafers, has high investment, is single-wafer grinding, cannot realize batch grinding, has low production efficiency, and is not suitable for grinding the 8-inch silicon wafers which are mainstream in the domestic market at present. The double-side grinding process has small investment, mainly aims at 8-inch silicon wafers, can grind in batches and improves the production efficiency.
The grinding disc used in the prior double-sided grinding process is mainly a cast iron disc, the use of the iron disc is easy to cause scratches or pollution to the main surface of the wafer, and because a large amount of metal ions and a large number of damage layers of mechanical stress are introduced, the subsequent procedure (corrosion) processing amount of the wafer is large, the corrosion time is long, the processing loss is large, and the utilization rate of the silicon wafer is relatively low. Most of the prior grinding processing modes adopted by a plurality of domestic processing units are processing by matching silicon carbide micro-powder grinding materials on cast iron plates and adding water or grinding oil for lubrication and cooling. Therefore, a lot of silicon carbide powder which cannot be ground and waste materials which are ground in the grinding process can be squeezed onto the surface of the workpiece by pressure to cause blackening of the surface of the workpiece, and the silicon carbide powder cannot be washed off and cannot be polluted by water in the later period. The cast iron disc is also ground to be thick by the silicon carbide grinding material along with the grinding of the workpiece, and the parallelism of the cast iron disc needs to be frequently ground in the later period.
The invention aims to provide a grinding method of a semiconductor silicon wafer, which grinds a cut silicon wafer by adopting a double-sided grinding process and improves the quality of a grinding sheet by improving the grinding process (grinding disc material, grinding liquid, grinding pressure, grinding rotating speed and the like); particularly, the ceramic disc is used for replacing a cast iron disc, so that the introduction of metal ions is reduced, the subsequent processing amount of the silicon wafer is reduced, the subsequent process (corrosion) time is shortened, the production efficiency is improved, the processing loss of the silicon wafer is reduced, and the utilization rate of the silicon wafer is improved.
Disclosure of Invention
The invention aims to provide a method for grinding a semiconductor silicon wafer, which grinds a cut silicon wafer by adopting a double-sided grinding process and improves the quality of a silicon grinding sheet by improving the grinding process (grinding disc material, grinding liquid, grinding pressure, grinding rotating speed and the like). Particularly, the ceramic disc is used for replacing a cast iron disc, so that the introduction of metal ions is reduced, the subsequent processing amount of the silicon wafer can be reduced, the subsequent process (corrosion) time is shortened, the production efficiency is improved, the processing loss of the silicon wafer is reduced, and the utilization rate of the silicon wafer is improved.
The purpose of the invention is mainly realized by the following technical scheme:
hair brushA grinding method for semiconductor silicon wafer includes such steps as using two-sided grinding system to grind the silicon wafer, arranging the silicon wafer between upper and lower grinding disks, adding grinding liquid, and regulating the grinding pressure and rotation speed of grinding machine to make the silicon wafer move relatively with the grinding disks. It is characterized in that the millstone is Al2O3A ceramic pan; the grinding fluid comprises an abrasive, a suspending surfactant and deionized water; the grinding pressure is controlled below 50kpa, preferably 10-30 kpa; the grinding speed is less than 100rpm, preferably 30-60 rpm.
The silicon wafer grinding method is characterized in that the grinding disc is a ceramic disc, and the main component of the grinding disc is Al2O3And the purity is more than 99%. The ceramic material hardly undergoes slip or dislocation movement at room temperature due to its chemical bond, and thus is hardly plastically deformed. Due to Al2O3The hardness and brittleness of the ceramic material are high, Al is formed by grinding with fine abrasive grains2O3The ceramic disc can obtain a good machined surface in the allowed time. Grinding ceramic materials, wherein the grinding material has a rolling effect or a micro-cutting effect; the abrasive used was Al2O3The grain is consistent with the composition of the ceramic disc, and the grinding disc and the grinding material can be mutually adjusted. The use of ceramic disks has the following advantages: the ultra-smooth perfect surface with high precision and approximate geometric shape can be obtained; is suitable for mass production; the processing method is simple, and the equipment investment is low; the processing loss is small.
At present, grinding machines used in grinding processes basically adopt ball-milling cast iron millstones, grinding materials can continuously wear the cast iron millstones in the grinding process, a large amount of iron can enter grinding liquid, and newly broken chemical bonds exposed on the surfaces of silicon wafers are adsorbed on the surfaces of the silicon wafers and are generally difficult to clean, so that heavy metal Fe pollution is caused. The heavy metal impurity Fe can cause the most serious heavy metal pollution to the silicon wafer, the potential barrier formed by dislocation of oxidation induced stacking fault is reduced, the device failure can be seriously influenced, and the yield of the chip is greatly reduced. Because the grinding introduces a large amount of metal ions and has a large damage layer of mechanical stress, the subsequent procedure (corrosion) processing amount of the wafer is large, the corrosion time is long, the processing loss is large, and the utilization rate of the silicon wafer is relatively low.
The silicon wafer grinding method is characterized in that the grinding liquid comprises grinding materials, a surfactant, deionized water and the like, and the grinding liquid comprises the following components in percentage by weight: 10 to 30 percent of abrasive, 0.5 to 2.0 percent of surfactant and the balance of deionized water. The grinding liquid abrasive is mainly Al2O3Micro powder with the granularity of 0-20um and optimized to 3-10 um; the grain size of the grinding material is larger than 10um, the grinding speed is accelerated, but the processing roughness is high, the surface is easy to scratch, and a processing loss layer is deepened; the grain diameter of the grinding material is less than 3um, the processing precision is high, but the grinding speed is slow, the requirements on equipment and environment are high, and the manufacturing cost is increased. The surfactant is a nonionic surfactant and mainly is fatty alcohol-polyoxyethylene ether or alkylolamide; the surfactant is added to wet the abrasive particles and the surface of the silicon wafer, emulsify the internal components of the grinding fluid and play a certain lubricating role in grinding the silicon wafer in the grinding process.
The method for polishing a silicon wafer is characterized in that the polishing pressure is controlled to be 50kpa or less, preferably in the range of 10 to 30 kpa. The pressure must be increased from a small constant rate to allow for uniform dispersion of the abrasive slurry. The polishing is carried out under a steady-state polishing pressure, the polishing time is about 5-15min, and the polishing pressure needs to be slowly reduced before the polishing is finished. The grinding pressure is too small, the grinding speed is too slow, the production efficiency is too low, and the cost control is not facilitated; the grinding speed is accelerated along with the increase of grinding pressure, but the mechanical damage of the surface of the silicon wafer is easily caused by too large pressure, the grinding damage is enlarged, and the surface quality is reduced.
The method for polishing a silicon wafer is characterized in that the polishing rotation speed is controlled to be 100rpm or less, preferably 30 to 60 rpm. Generally speaking, the polishing speed is high and the polishing rate is fast. The grinding is the coexistence of speed and roughness, and the rotating speed is not suitable to be too large in order to reduce the interface defects. When the grinding rotating speed is less than 30rpm, the grinding rotating speed is low, the grinding speed is slow, the surface roughness is small, but the production efficiency is low; when the polishing rate is more than 100rpm, the surface friction increases, and interface defects are formed.
The invention has the beneficial effect.
By adopting a double-sided grinding process and selecting a proper grinding disc and a proper grinding material, the grinding pressure and the grinding rotating speed are properly controlled, the obtained silicon grinding sheet has no pits, bright spots, tool marks, claws, scratches, cracks, edge breakage and contamination on the surface, and the surface finish is good; surface machining precision: TTV is less than or equal to 2um, SFQR is less than or equal to 50nm, and Ra is less than or equal to 100 nm.
The ceramic disc is used for replacing a cast iron disc, so that the introduction of metal ions, particularly Fe ions, is reduced, and the processing amount of subsequent processing (corrosion) is reduced. The corrosion time of the silicon grinding sheet obtained by the method is only 3-6min, compared with the conventional 6-12min, the corrosion time is obviously shortened, and the production efficiency is improved; the removal amount of the corroded thickness is 10-30um, compared with the conventional thickness of 30-50um, the processing loss is greatly reduced, and the utilization rate of the silicon wafer is improved.
The invention uses the ceramic disc to replace the cast iron disc, thereby reducing the disc repairing times of the grinding disc, the cast iron disc needs to be frequently repaired, and the ceramic disc does not need.
Drawings
FIG. 1 is a schematic diagram of a polishing system employing double-side polishing technology according to the present invention.
Fig. 2 is a schematic view of a grinding chip using a double-side grinding technique according to the present invention.
Detailed Description
The present invention will be described in further detail in terms of process steps for a more clear understanding of the invention.
Preparing a grinding fluid: the abrasive, the surfactant and the deionized water are respectively weighed according to the proportion of the content of the invention, and the slurry is stirred for 5-20 min.
And cleaning and washing the ceramic disc and the planet sheet.
And putting the silicon wafer to be ground into the hole of each planetary plate, wherein the front surface of the silicon wafer faces downwards in the putting process, and manually rotating and pressing the silicon wafer to completely exhaust air on the contact surface of the silicon wafer and the lower grinding disc so as to ensure that all the silicon wafers normally rotate in the holes and cannot slide away.
According to the invention, grinding technological parameters including grinding pressure and grinding rotating speed are selected, and grinding is carried out by using a double-sided grinding machine.
And after finishing grinding, carefully taking out all the silicon wafers, and placing the silicon wafers on a wafer rack in the overflow groove for overflowing.
And cleaning the silicon wafer by using an ultrasonic cleaning machine.
And (3) inspecting the cleaned silicon wafer: using a microscope to check whether the defects such as scratches, jawbones, tool marks, cracks and the like exist in a darkroom; measuring geometric parameters of the surface of the silicon wafer by using ADE AFS6330 produced by ADE company; and (5) checking the surface cleanliness by using a granularity detector.
And corroding the qualified silicon grinding sheet.
And cleaning and inspecting the corroded silicon wafer.
Example 1
The method comprises the steps of cultivating an 8-inch silicon single crystal rod with P-type resistivity of 50 omega cm by adopting a CZ method, grinding the silicon wafer by adopting a double-sided grinding technology after slicing, chamfering and cleaning, and selectively preparing a grinding fluid for later use according to the method set forth by the invention, wherein Al is contained in the silicon single crystal rod2O3The granularity of the micro powder is 10 um. The method is carried out in a room temperature environment, and the grinding disc is made of nodular cast iron.
According to the grinding process, a silicon wafer to be ground is placed in a carrier plate with holes having the same size as the wafer, and the carrier plate is placed between two grinding disks and ground by using a double-side grinder (manufactured by Speed Fam, japan). The grinding pressure was gradually increased to 25kpa by adjusting the grinding machine, and controlled at 25kpa, the grinding speed was controlled at 55rpm, and the grinding time was 8 min. After the grinding of the wafer is finished, cleaning the wafer by using a cleaning machine, and inspecting the cleaned wafer: the surface of the silicon grinding sheet is free from pits, bright spots, tool marks, claws, scratches, cracks, edge breakage and contamination, and has good surface finish; machining precision of the surface of the ground silicon wafer: TTV is less than or equal to 2um, SFQR is less than or equal to 50nm, and Ra is less than or equal to 100 nm.
Corroding the obtained grinding sheet by adopting a conventional corrosion process to remove impurities such as a mechanical stress damage layer, metal ions and the like on the surface of the silicon wafer, wherein the corrosion time is 4 min; the thickness removal of the etch was 20 um.
Comparative example 1
The method comprises the steps of cultivating an 8-inch silicon single crystal rod with P-type resistivity of 50 omega cm by using a CZ method, grinding the silicon wafer by using a double-sided grinding technology after slicing, chamfering and cleaning, and selectively preparing a grinding fluid for later use according to the method of example 1, wherein Al is contained in the silicon single crystal rod2O3The granularity of the micro powder is 10 um. The method is carried out in a room temperature environment, and the grinding disc is made of Al2O3A ceramic.
According to the grinding process, a silicon wafer to be ground is placed in a carrier plate with holes having the same size as the wafer, and the carrier plate is placed between two grinding disks and ground by using a double-side grinder (manufactured by Speed Fam, japan). The grinding pressure was gradually increased to 25kpa by adjusting the grinding machine, and controlled at 25kpa, the grinding speed was controlled at 55rpm, and the grinding time was 8 min. After the grinding of the wafer is finished, cleaning the wafer by using a cleaning machine, and inspecting the cleaned wafer: the surface of the silicon grinding sheet is free from pits, bright spots, tool marks, claws, scratches, cracks, edge breakage and contamination, and has good surface finish; machining precision of the surface of the ground silicon wafer: TTV is less than or equal to 5um, SFQR is less than or equal to 0.1um, and Ra is less than or equal to 200 nm.
Corroding the obtained grinding sheet by adopting a conventional corrosion process to remove impurities such as a mechanical stress damage layer, metal ions and the like on the surface of the silicon wafer, wherein the corrosion time is 10 min; the thickness removal of the etch was 40 um.
Claims (6)
1. A method for grinding a semiconductor silicon wafer is characterized by comprising the following steps:
preparing a grinding fluid;
cleaning the ceramic disc grinding disc and the planetary plate; the ceramic disc-grinding disc mainly comprises Al2O3The purity is more than 99 percent; the ceramic grinding disc comprises an upper ceramic grinding disc and a lower ceramic grinding disc;
placing the silicon wafer to be ground into the hole of each planetary wafer, wherein the front side of the silicon wafer faces downwards in the placing process, and manually rotating and pressing the silicon wafer to completely discharge air on the contact surface of the silicon wafer and the lower ceramic grinding disc so as to ensure that all the silicon wafers normally rotate in the holes and cannot slide away;
selecting grinding process parameters including grinding pressure and grinding rotation speed, and grinding with a double-side grinder;
after grinding is finished, overflowing and ultrasonically cleaning the silicon wafer;
inspecting the surface quality of the silicon wafer, and selecting qualified silicon wafers;
corroding the qualified silicon wafer, and then cleaning and inspecting;
wherein the grinding fluid comprises an abrasive, a surfactant and water; the grinding liquid is Al2O3Fine powder of Al, wherein2O3The granularity of the micro powder is 0-20 um.
2. The method for grinding a semiconductor silicon wafer according to claim 1, wherein the grinding pressure is controlled to 50kpa or less.
3. The method for polishing a semiconductor silicon wafer according to claim 1, wherein the polishing rotation speed is controlled to 100rpm or less.
4. The method for polishing a semiconductor silicon wafer according to claim 1, wherein the surfactant is a nonionic surfactant.
5. The method for polishing a semiconductor silicon wafer according to claim 1, wherein the etching step time is 4 to 6 min.
6. The method for grinding a semiconductor silicon wafer according to claim 1, wherein the etching step removes a damage layer of 10 to 30 μm.
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| CN108165177B (en) * | 2017-12-20 | 2020-09-22 | 重庆超硅半导体有限公司 | Stability control method for semiconductor silicon wafer grinding fluid |
| CN113001392A (en) * | 2021-01-08 | 2021-06-22 | 天津中环领先材料技术有限公司 | Large-size silicon wafer grinding process |
| CN113199392A (en) * | 2021-04-12 | 2021-08-03 | 中环领先半导体材料有限公司 | Machining process for improving parameters of 8-inch grinding disc |
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