CN201177164Y - Device for improving semiconductor monocrystalline silicon grinding silicon chip parallelism - Google Patents
Device for improving semiconductor monocrystalline silicon grinding silicon chip parallelism Download PDFInfo
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- CN201177164Y CN201177164Y CNU2008200850307U CN200820085030U CN201177164Y CN 201177164 Y CN201177164 Y CN 201177164Y CN U2008200850307 U CNU2008200850307 U CN U2008200850307U CN 200820085030 U CN200820085030 U CN 200820085030U CN 201177164 Y CN201177164 Y CN 201177164Y
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- lower grinding
- grinding disk
- wall
- mill
- silicon chip
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Abstract
The utility model discloses a device for improving the parallelism of a furbished silicon slice of semiconductor single crystal silicon, comprising a lower milling disk, an internal gear, an external gear, and carrier plate. The outer wall of the internal gear and the internal wall of the external gear are tooth shaped walls. The bottom of the area between the outer wall of the internal gear and the inner wall of the external gear is provided with the lower milling disk. The carrier plate is horizontally arranged on the lower milling disk. The carrier plate is meshed with the tooth shaped walls of the internal gear and the external gear through the teeth part on an outer contour. The carrier plate is provided with a plurality of plate laying holes for accommodating the furbished silicon slice. An annular inner idle milling area stays between the inner contour of the lower milling disk and the outer wall of the internal gear. An annular outer idle milling area stays between the outer contour of the lower milling disk and the inner wall of the external gear. The local movement trace of each plate laying hole of the carrier plate is overlapped with the inner idle milling area and the outer idle mining area. The device furbishes the furbished silicon slice. Not only the repairing times of the milling disk are largely reduced, but also the fact that the parallelism index of the furbished silicon conforms to the requirement is effectively ensured.
Description
[technical field]
The utility model belongs to a kind of device that improves semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism.
[background technique]
Make silicon cell with single crystal silicon rod, during need single crystal silicon rod to be processed into and meet necessarily required monocrystalline silicon piece by equipment such as slicer, wafer lapping machine, buffing machines.Wherein, wafer lapping machine is that the silicon cutting blade is carried out the process that shaping is handled to silicon chip grinding, and main purpose is the geometrical shape that guarantees silicon chip, further improves the silicon chip surface shape integrity on the quality index basis of cutting blade, comprises parallelism.
Non-ferrous metal workman technical know-how teaching material " technique for processing silicon chip " (Hou Lianwu compiles, the inner book punishment in Beijing printing permit 86-016 number) the 69th page of the 5th joint of a book introduced the silicon chip grinding processing technique.The silicon chip that cuts down from monocrystal rod, because accuracy of machines, interior garden diamond blade and operator revise reasons such as blade technology, can not reach the parallelism requirement fully, therefore, abrasive machining becomes the present important technique for processing silicon chip that needs exploration, by abrasive machining, make the thickness deviation＜5 μ m of silicon chip, parallelism＜2 μ m, angularity＜20 μ m, and remove tool marks etc.
Existing double cutting separating disk machine belongs to the Gear Planet Transmission structure, analyzes from the carrier-pellet forms of motion, has all guaranteed rotation and the revolution of silicon chip on mill in the design, so that all are ground the parallelism that change of line speed that silicon chip do not cause because of mill diameter factor influences silicon chip.But, there are the following problems for large diameter silicon chip grinding in actual use for the double cutting separating disk machine of prior art: because the diametric linear velocity everywhere of mill difference, the silicon chip part that is positioned at the mill cylindrical grinds off more than intermediate portion, not only mill itself need often carry out reconditioning, as: C62-640B/YJ type twin grinder continuously grinding φ 3 " 120 of silicon chips will be revised mill No. one time; the reconditioning number of turns 600 circles; and; silicon chip grinds on such mill; its parallelism and tortuosity etc. are difficult to reach standard; both influenced manufacturing efficiency, waste a large amount of abrasive materials again, strengthen cost of production, moreover such polishing sheet is provided for road, back polishing process, the parallelism difference of polished silicon wafer can further strengthen, so that does not reach the production of integrated circuits requirement and scrap.
[summary of the invention]
For overcoming the problems referred to above that prior art exists, the utility model aims to provide a kind of device that improves semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism with new structure, utilize this wafer lapping machine that silicon chip is carried out grinding operation, not only can significantly reduce the reconditioning number of times of mill, can also guarantee effectively that the parallelism index of being ground silicon chip meets the requirements.
For achieving the above object, the utility model has adopted following technological scheme: this structure of improving the device of semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism comprises lower grinding disk, internal gear, external gear and carrier-pellet, internal gear outer wall and external gear inwall are teeth wall, bottom, zone between internal gear outer wall and the external gear inwall is provided with lower grinding disk, the carrier-pellet of a plurality of toroidals is horizontal to be arranged on the lower grinding disk, and the tooth spare of carrier-pellet on external frame meshes with the teeth wall of internal gear and external gear; Carrier-pellet is provided with several film releasing holes that are used to admit silicon chip, it is characterized in that: outline diameter enlarges between back and the internal gear outer wall and leaves empty mill district in the circle in the lower grinding disk of described lower grinding disk, after the lower grinding disk external frame reduced of described lower grinding disk and leave one between the external gear inwall and enclose mill district, outer space; Area overlapping is ground with interior empty mill district, outer space respectively in the film releasing hole of described carrier-pellet, the local motion track in each film releasing hole.
The aforesaid device that improves semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism, described lower grinding disk top also is provided with upper millstone, and the diameter of profile and upper millstone external frame is consistent with the diameter of interior profile of the lower grinding disk of lower grinding disk and lower grinding disk external frame in the upper millstone.
The aforesaid device that improves semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism, the mill district, reduced value outer space of upper millstone external frame and lower grinding disk external frame is 5～8mm, the interior empty mill of the enlarged-diameter value of the interior profile of profile and lower grinding disk district is 3～5mm in the upper millstone.
Beneficial effect: the application is at the change of line speed that is caused because of mill diameter factor by the mill silicon chip, make and ground off more than core by mill silicon chip excircle part, cause being ground the limit phenomenon of collapsing of silicon chip thick middle and thin edge, for the double cutting separating disk machine, on dwindling, the outside diameter of lower grinding disk and the technological scheme that adds the imperial palace circular diameter, in being provided with, behind the mill district, outer space, utilizing the wafer lapping machine planetary gear structure is the characteristics of the revolution and the rotation of carrier-pellet, make by the excircle part minimizing of mill silicon chip and consumed time, thereby realize balanced by mill silicon chip middle part and the outside actual amount of being ground, the purpose of control parallelism.Carrier-pellet is under revolution and rotation situation, after inside and outside empty mill district is set, make all peripheral parts that ground silicon chip that the gap of snatch a moment of leisure (not ground) of one-period all be arranged with respect to last lower grinding disk everywhere, therefore, ground the change of line speed that silicon chip causes because of mill diameter factor, make and ground off more than core by mill silicon chip excircle part, the limit phenomenon of collapsing that causes being ground the silicon chip thick middle and thin edge is inhibited, parallelism by the mill silicon chip is effectively improved, thereby has also realized reducing the purpose of mill reconditioning number of times.
For the utility model content that sharpens understanding, be described in further detail by embodiment below in conjunction with accompanying drawing.
[description of drawings]
Fig. 1 is an embodiment's of the utility model a plan structure schematic representation, has left out parts such as upper millstone among the figure.
Sequence number is represented respectively among the figure: carrier-pellet 1, and film releasing hole 11, external frame 12, silicon chip 2 exposes portion 21, interior dew portion 22, external gear 3, external gear inwall 31, profile 41 in the lower grinding disk 4, lower grinding disk, lower grinding disk external frame 42, internal gear 5, internal gear outer wall 51, interior empty mill district 52, outer space mill district 6, rotating shaft 7.
[embodiment]
Referring to Fig. 1.Basic ideas of the present utility model are: on the architecture basics of existing double cutting separating disk machine (also can be the safe-sided disk machine), by enlarging outline diameter in the mill and dwindling that mill external frame diameter realizes, other structure is not done any change, after sky grinds district 52, outer space mill district 6 in forming, make overlapping with interior empty mill district 52, outer space mill district 6 respectively by the local motion track of mill silicon chip 2 in the film releasing hole 11, promptly circulating under revolution and the rotation situation portion of exposing 21, interior dew portion 22 occur.
Be that example illustrates this device with the double cutting separating disk machine below, because the double cutting separating disk machine is known a kind of conventional machinery in the silicon chip grinding operation, therefore some concrete structure repeats no more in explanation.
Referring to Fig. 1, this figure is after making horizontal resection along last lower grinding disk, and removes the plan structure schematic representation behind the upper millstone.Outermost is an external gear 3, and the external gear inwall 31 of external gear 3 raises up, and forms the circular-arc teeth wall towards the center of circle.Corresponding with external gear 3, the middle part is provided with an internal gear 5, and the internal gear outer wall 51 of internal gear 5 also raises up and forms the teeth wall of circular arc.Zone between the inside and outside teeth wall forms a circular groove, and circular groove is a rib with internal gear outer wall 51 and external gear inwall 31, and the bottom surface of circular groove is the lower grinding disk 4 of horizontal setting.
The carrier-pellet 1 of a plurality of toroidals is periphery on lower grinding disk 4, also be provided with the tooth spare that is complementary with above-mentioned inside and outside teeth wall on the wall of the carrier-pellet external frame 12 of carrier-pellet 1, the tooth spare on carrier-pellet external frame 12 is realized the teeth wall engagement with internal gear 5 and external gear 3.Carrier-pellet 1 is provided with several film releasing holes 11 that are used to admit silicon chip 2, generally establishes four film releasing holes on the every carrier-pellet 1.Leave empty mill district 52 in the circle in the lower grinding disk of lower grinding disk 4 between profile 41 and the internal gear outer wall 51, leave a circle mill district, outer space 6 between the lower grinding disk external frame 42 of lower grinding disk 4 and the external gear inwall 31, so-called inside and outside empty mill district is actually a not zone to being ground by the mill silicon chip.
The local motion track in each the film releasing hole 11 on the carrier-pellet 1 distinguishes 52 with interior empty mill respectively, mill district, the outer space 6 overlapping meanings are: the film releasing hole 11 interior quilts that are placed on carrier-pellet 1 grind silicon chip 2, in rotation and revolution process, the peripheral part that is ground silicon chip all can be periodically tides over interior empty mill district 52, mill district, outer space 6 and not ground, obtain " snatching a moment of leisure " chance, this deals with the change of line speed that is caused because of mill diameter factor by the mill silicon chip, overcome by mill silicon chips periphery part and grind off more defective than core, make by the limit phenomenon of collapsing of mill silicon chip thick middle and thin edge to be inhibited, improve parallelism.
According to existing wafer lapping machine mill situation, claimant's repetition test draws: the mill district, reduced value outer space of upper millstone external frame and lower grinding disk external frame 42 is 5～8mm, and the interior empty mill of the enlarged-diameter value of the interior profile 41 of profile and lower grinding disk district is that 3～5mm is good in the upper millstone.
When the device that utilizes the utility model to improve semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism carries out the abrasive disc operation: at first carrier-pellet 1 (or claim planet sheet) is placed on the lower grinding disk 4, and makes the teeth wall engagement of tooth spare and external gear inwall 31 and internal gear outer wall 52 on the external frame of carrier-pellet 1.Then, will be put respectively in the film releasing hole 11 of carrier-pellet 1 by the mill silicon chip.At this moment, the part that can be observed the peripheral part of some silicon chip 2 exposes to lower grinding disk 4, promptly exposes portion 21, and interior dew portion 22 lays respectively in mill district, outer space 6, the interior empty mill district 52.At this moment, upper millstone is dropped to by the upper surface of mill silicon chip, inject abrasive material, starting motor running grinding.Under rotating shaft 7 drove, along with the rotation of internal gear 5 and external gear 3, carrier-pellet 1 was made planetary motion and is driven and also made planetary motion by the mill silicon chip in the film releasing hole 11 between upper and lower mill, thereby realizes grinding.In whole grinding process, all ground silicon chips periphery part interior dew portion 22, expose that portion 21 rotates successively, periodic cycle tide in empty mill district 52 and outer space mill district 6, obtain " snatching a moment of leisure " time, thereby reach the utility model purpose.
The foregoing description just for the case of the utility model content that sharpens understanding, as technological scheme being applied to the safe-sided disk machine, carries out the protection domain that simple conversion also should belong to this patent according to flesh and blood.
Claims (3)
1, a kind of device that improves semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism, comprise mill, internal gear (5), external gear (3) and carrier-pellet (1), internal gear outer wall (51) and external gear inwall (31) are teeth wall, bottom, zone between internal gear outer wall (51) and the external gear inwall (31) is provided with lower grinding disk (4), the carrier-pellet of a plurality of toroidals (1) is horizontal to be arranged on the lower grinding disk (4), and the tooth spare of carrier-pellet (1) on external frame (12) meshes with the teeth wall of internal gear (5) and external gear (3); Carrier-pellet (1) is provided with several film releasing holes (11) that are used to admit silicon chip (2), it is characterized in that: in the lower grinding disk of described lower grinding disk (4) after profile (41) enlarged-diameter and leave empty mill district (52) in the circle between the internal gear outer wall (51), after lower grinding disk external frame (42) reduced of described lower grinding disk (4) and leave a circle mill district, outer space (6) between the external gear inwall (31); (52) are distinguished with interior empty mill respectively in the film releasing hole (11) of described carrier-pellet (1), the local motion track in each film releasing hole (11), outer space mill district (6) is overlapping.
2, a kind of device that improves semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism as claimed in claim 1, it is characterized in that: described lower grinding disk (4) top also is provided with upper millstone, and the diameter of profile and upper millstone external frame is consistent with the diameter of interior profile (41) of the lower grinding disk of lower grinding disk (4) and lower grinding disk external frame (42) in the upper millstone.
3, a kind of device that improves semi-conductor monocrystalline silicon grinding silicon chip depth of parallelism as claimed in claim 2, it is characterized in that: the mill district, reduced value outer space of upper millstone external frame and lower grinding disk external frame (42) is 5～8mm, and the interior empty mill of the enlarged-diameter value of the interior profile (41) of profile and lower grinding disk district is 3～5mm in the upper millstone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200850307U CN201177164Y (en) | 2008-04-02 | 2008-04-02 | Device for improving semiconductor monocrystalline silicon grinding silicon chip parallelism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200850307U CN201177164Y (en) | 2008-04-02 | 2008-04-02 | Device for improving semiconductor monocrystalline silicon grinding silicon chip parallelism |
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| CN201177164Y true CN201177164Y (en) | 2009-01-07 |
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| CNU2008200850307U Expired - Fee Related CN201177164Y (en) | 2008-04-02 | 2008-04-02 | Device for improving semiconductor monocrystalline silicon grinding silicon chip parallelism |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103878660A (en) * | 2014-03-31 | 2014-06-25 | 高佳太阳能股份有限公司 | Silicon wafer grinding device used for silicon wafer treatment |
| CN105643433A (en) * | 2016-02-15 | 2016-06-08 | 张欣 | Efficient grinding and polishing machining device |
| CN106914815A (en) * | 2015-12-24 | 2017-07-04 | 上海超硅半导体有限公司 | The Ginding process of semi-conductor silicon chip |
-
2008
- 2008-04-02 CN CNU2008200850307U patent/CN201177164Y/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103878660A (en) * | 2014-03-31 | 2014-06-25 | 高佳太阳能股份有限公司 | Silicon wafer grinding device used for silicon wafer treatment |
| CN106914815A (en) * | 2015-12-24 | 2017-07-04 | 上海超硅半导体有限公司 | The Ginding process of semi-conductor silicon chip |
| CN105643433A (en) * | 2016-02-15 | 2016-06-08 | 张欣 | Efficient grinding and polishing machining device |
| CN105643433B (en) * | 2016-02-15 | 2018-11-06 | 张欣 | A kind of high-efficient grinding polishing processing device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090107 Termination date: 20160402 |