CN106711032B - High-efficiency low-damage grinding method suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer - Google Patents
High-efficiency low-damage grinding method suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer Download PDFInfo
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- CN106711032B CN106711032B CN201611130455.0A CN201611130455A CN106711032B CN 106711032 B CN106711032 B CN 106711032B CN 201611130455 A CN201611130455 A CN 201611130455A CN 106711032 B CN106711032 B CN 106711032B
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000003776 cleavage reaction Methods 0.000 title claims abstract description 69
- 230000007017 scission Effects 0.000 title claims abstract description 56
- 238000000137 annealing Methods 0.000 claims abstract description 46
- 230000008569 process Effects 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims description 29
- 239000000919 ceramic Substances 0.000 claims description 25
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 17
- 239000000725 suspension Substances 0.000 claims description 16
- 238000007596 consolidation process Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 15
- 229920005749 polyurethane resin Polymers 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910001018 Cast iron Inorganic materials 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 12
- 230000002045 lasting effect Effects 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000005461 lubrication Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000012459 cleaning agent Substances 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 230000000855 fungicidal effect Effects 0.000 claims description 2
- 239000000417 fungicide Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000003350 kerosene Substances 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 239000013008 thixotropic agent Substances 0.000 claims description 2
- 238000004018 waxing Methods 0.000 claims description 2
- -1 Alkane Hydrocarbon Chemical class 0.000 claims 1
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 238000004321 preservation Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 15
- 239000010410 layer Substances 0.000 abstract description 14
- 239000011229 interlayer Substances 0.000 abstract description 7
- 238000003754 machining Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 83
- 230000003746 surface roughness Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a kind of high-efficiency low-damage grinding method suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, this method include the annealing after annealing pretreatment, b rough lapping, c rough lapping before a rough lapping pre-process, d patch and e smooth grinding.Present invention process design is reasonable, strong operability, material removal rate is fast, high in machining efficiency, and wafer surface is smooth, the defects of no obvious scratch, cleavage crack, the removing of interlayer cleavage and cleavage are cheated, can get the high quality wafer that surface integrity is higher and surface damage layer is low.
Description
Technical field
The present invention relates to wafers of semiconductor material to planarize grinding technology field, especially a kind of suitable for hard crisp easy
Cleavage monocrystalline gallium oxide (β-Ga2O3) chip high-efficiency low-damage grinding method.
Background technique
Gallium oxide is as novel gallium nitride substrate material, and lattice mismatch rate is low, forbidden bandwidth is high, has both sapphire light transmission
Property and silicon carbide the good characteristics such as electric conductivity, be the more preferably GaN substrate material instead of aluminium oxide and silicon carbide, in light
Electrical part field has boundless market prospects.
With highlighted, efficient LED technology development, semiconductor wafer surface Ultra-precision Turning quality is proposed more severe
The requirement at quarter, will not only ensure wafer surface high integrity, and the requirement of final surface roughness has also reached Subnano-class.It grinds
Mill processing is intended to remove kerf, micro-crack and the sub-surface damage iso-metamorphism layer generated when chip cutting, throws as chemical machinery
Light (CMP) obtains the critical process step before the lossless surface of ultra-smooth, it appears particularly important.
Monocrystalline gallium oxide material not only has the hard Brittleness similar with photoelectron materials such as aluminium oxide and silicon carbide, also
With unique easy cleavage characteristic, grinding etc. can generate cleavage crack, interlayer solution in the process with crystal fracture removal
The typical cleavage defect such as reason removing and cleavage hole, to poles such as grinding pressure, wear particle size, internal stress and process temperature
Tool is sensitive, and then influences the whole efficiency and quality of subsequent polishing.
Currently, being suitable for the grinding method of the crystalline materials chips such as aluminium oxide, silicon carbide, silicon, in abrasive species and granularity
Selection, grinding pressure, grinding rate, the control of residual stress etc., do not fully consider monocrystalline gallium oxide material sheet
The typical hard crisp easy cleavage characteristic of body.Using the grinding method of the crystalline materials chip such as existing aluminium oxide, silicon carbide, silicon to monocrystalline
When gallium oxide wafer carries out attrition process, the cleavage defects such as serious cleavage crack, the removing of interlayer cleavage and cleavage hole are also easy to produce,
Wafer surface integrality is lower, surface damage layer thickness is larger, it is difficult to realize low cost, the high-quality and high-efficiency of monocrystalline gallium oxide wafer
Processing.
Therefore, for the research of monocrystalline gallium oxide wafer grinding method, it appears especially urgent！The present invention Given this demand,
Through seriation attrition process experiment screening, a kind of preferred high-efficiency low-damage suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer out
Grinding method.
Summary of the invention
Goal of the invention: the purpose of the invention is to overcome in the prior art, in the case of existing grinding method, monocrystalline
Gallium oxide wafer attrition process surface quality is not high, is also easy to produce the cleavage defects such as cleavage crack, the removing of interlayer cleavage and cleavage hole,
Efficiency, quality and the cost for seriously affecting the lossless surface chemistry mechanical polishing processing of the subsequent ultra-smooth of chip, propose a kind of be applicable in
In the high-efficiency low-damage grinding method of hard crisp easy cleavage monocrystalline gallium oxide wafer.
Technical solution: in order to achieve the goal above, main technical schemes of the present invention are as follows:
A kind of high-efficiency low-damage grinding method suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, comprising the following steps:
A, it anneals and pre-processes before rough lapping:
The monocrystalline gallium oxide cut crystal to be processed is loaded on ceramic machine frame, then ceramic machine frame is placed in
In brilliant alms bowl in annealing furnace, gallium oxide crystal powder is added in Xiang Jingbo, until fill up chip and ceramic machine frame and crystalline substance alms bowl it
Between gap, and need with the covering of gallium oxide crystal powder the monocrystalline gallium oxide cut crystal of annealed processing, then pass to protection
Gas nitrogen, discharge annealing furnace air, then heating is made annealing treatment；
B, rough lapping: the pretreated monocrystalline gallium oxide wafer that will anneal before step a rough lapping takes out, and it is double to be placed in cast iron plate
The circle of the planetary gear of surface grinding is reserved intracavitary, and the gear teeth on planetary gear are meshed with centre wheel, outer gear ring respectively, in control
The adjusting cylinder of abrasive disk moves down top lap and uniformly contacts with monocrystalline gallium oxide wafer to be processed upper surface；Then up
It is continually fed into anti-cleavage suspension lapping liquid between abrasive disk, lower abrasive disk and monocrystalline gallium oxide wafer, increases lubrication when grinding
And cutting force；
Then start cast iron plate twin grinder, adjust control top lap and lower abrasive disk rotates backward, planetary gear exists
It revolves in the same direction under the collective effect of centre wheel and outer gear ring with lower abrasive disk, forms grinding cutting effect, it is brilliant to monocrystalline gallium oxide
Piece upper and lower surfaces synchronize symmetrical grinding；Centre wheel is by speed reducer and motor driven；
C, the annealing pretreatment after rough lapping:
Monocrystalline gallium oxide wafer after taking step b rough lapping, repeat the above steps a, to the monocrystalline gallium oxide after rough lapping
Chip carries out annealing pretreatment again；
D, patch:
Step c pretreated monocrystalline gallium oxide wafer of annealing is placed in the chip placing groove on semi-automatic chip mounter, it is right
Monocrystalline gallium oxide wafer is heated；In monocrystalline gallium oxide wafer adhesive surface adding liquid wax and wax is got rid of, revolving speed is 500 when getting rid of wax
~1000r/min makes liquid wax be uniformly distributed in the back side of monocrystalline gallium oxide wafer；Then the monocrystalline gallium oxide after waxing is brilliant
Piece moves on vacuum chuck, and it is 300mm's that monocrystalline gallium oxide wafer, which is attached at diameter, by the mechanical arm with vacuum chuck
On ceramic disk, wax-layer thickness < 2 μm after patch；Ceramic disk is moved on cooling device after patch and is cooled down；
E, smooth grinding:
Ceramic disk after the completion of the patch is mounted on the bistrique of single-sided lapping machine, polyurethane is placed on abrasive disk
Resin base viscoelastic consolidation abrasive lapping pad adjusts the air cylinder structure being connected with bistrique, is then driven by a motor abrasive disk rotation,
Carry out smooth grinding；Deionized water adding trough, lappingout are offered on the polyurethane resin-based viscoelastic consolidation abrasive lapping pad
De-ionized water flow rate control is in 8~15ml/min during mill.
Preferably, the above-described high-efficiency low-damage grinding for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer
Method, annealing pretreatment uses three-stage method for annealing before rough lapping described in step a, and the monocrystalline gallium oxide in annealing furnace cuts brilliant
Piece first carries out the lasting insulation annealing of 3~5h at 200~300 DEG C；Then continuing for 6~10h is carried out at 600~800 DEG C
Insulation annealing；Then 10~the 16h carried out at 1000~1200 DEG C again continues insulation annealing, finally with 20~30 DEG C per hour
It is cooled to room temperature, is come out of the stove.
Preferably, the above-described high-efficiency low-damage grinding for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer
Method, described when reserving intracavitary placement monocrystalline gallium oxide wafer chip to planetary gear circle described in step b, monocrystalline gallium oxide wafer
Surface gets wet, monocrystalline gallium oxide wafer be placed on planetary gear circle reserve it is intracavitary after, then brush one times anti-cleavage suspension lapping liquid or go
Ionized water keeps water profit.
Preferably, the above-described high-efficiency low-damage grinding for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer
Method, rough lapping described in step b, the pressure that top lap applies are 200~300g/cm2, the revolving speed of top lap is 13~
The revolving speed of 20r/min, lower abrasive disk are 28~40r/min, and the revolving speed of outer gear ring is 8~15r/min, the revolving speed of centre wheel is 4
~30r/min, the flow control of anti-cleavage suspension lapping liquid is in 20~30ml/min.
Preferably, the above-described high-efficiency low-damage grinding for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer
Method, the anti-cleavage suspension lapping liquid are made of the raw material of following weight percents:
Alumina powder: 5~10%；Dispersion thixotropic agent: 3~5%；Surfactant: 5~10%；Kerosene: 45~
50%；Alkane: 25~30%；PH adjusting agent: 2~3%；Defomaing agent: 0.02%；Fungicide: 0.02%；Help cleaning agent:
0.05%.
Preferably, the above-described high-efficiency low-damage grinding for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer
The planetary gear thickness of method, step b cast iron plate twin grinder is 0.15~0.2mm thinner than monocrystalline gallium oxide wafer thickness.
Preferably, the above-described high-efficiency low-damage grinding for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer
Method, the particle size range of the polyurethane resin-based viscoelastic consolidation abrasive lapping pad are 1.5~3.5 μm, alumina powder
For α-Al2O3, 99.9% or more purity.
Preferably, the above-described high-efficiency low-damage grinding for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer
Method, during step e smooth grinding, grinding pressure is 150~200g/cm2, lap speed is 10~60r/min, ceramic disk
Revolving speed is 10~40r/min, and grinding temperature is 30~40 DEG C.
The grinding method that grinding method provided by the invention is combined using rough lapping and smooth grinding, rough lapping are intended to quickly
The deeper metamorphic layer such as remaining stria, micro-crack and sub-surface damage after gallium oxide wafer surface is cut is removed, is effectively improved
Lapping efficiency；Smooth grinding is further intended to remaining damage metamorphic layer after removal gallium oxide wafer surface rough lapping, effectively
Improve wafer surface processing quality.Rough lapping process uses cast iron plate twin grinding, synchronous removal two planes of gallium oxide wafer
The remaining deeper metamorphic layer of upper cutting avoids two plane surfaces during following process because of damage metamorphic layer and stress distribution
It is excessively asymmetrically formed excessive stress difference, causes wafer bow, roughness index decline.
The present invention is screened by many experiments, and anti-cleavage suspension lapping liquid is used in rough lapping processing, and the lapping liquid is outstanding
Float in stable condition, precipitated after a long time placement without obvious component materials, lapping liquid abrasive grain is uniformly dispersed, can inhibit agglomerate grain or
Person's precipitating reduces the discontinuity of wafer surface and stress in attrition process and concentrates, effectively prevent cleavage crack, interlayer cleavage
The generation of the cleavage defect such as removing and cleavage hole.
The present invention is screened by many experiments, and smooth grinding uses polyurethane resin-based viscoelastic consolidation abrasive lapping single pad face
Grinding, grinding pad surface layer are contacted with aqueous polishing liquid, have certain viscoplasticity after softening, and adjustable improve is ground in smooth grinding processing
The uniformity of grain stress, is effectively ensured the crystal table of high integrality required by subsequent chemical-mechanical polishing and low damage layer depth
Face quality.The use of above-mentioned anti-cleavage suspension lapping liquid and polyurethane resin-based viscoelastic consolidation abrasive lapping pad, can subtract significantly
The mechanics extension effect of less to the remaining micro-crack of cutting surfaces, stress damage layer the defects of, effectively inhibits gallium oxide wafer to grind
The generation of mill processing cleavage defect.In addition, the shape of the polyurethane resin-based non-touch water-based part of viscoelastic consolidation abrasive lapping pad
Shape keeps stronger stability, facilitates the holding of the excellent flatness of chip.
The present invention is screened by many experiments, is treated processed wafer before rough lapping and smooth grinding processing and has been carried out preferably
The annealing of temperature and time pre-processes, and can be released effectively remaining stress defect on chip, it is not right can to solve processed wafer stress
The poor defect of angularity caused by claiming, flatness, improves the total quality of chip following process.Using according to the present invention
Grinding method process gallium oxide wafer, material removal rate is fast, high in machining efficiency, and wafer surface is relatively smooth, without obvious scratch,
The defects of cleavage crack, the removing of interlayer cleavage and cleavage are cheated, can get that surface integrity is higher and the lower height of surface damage layer
Quality wafer.
Advantages and advantages of the invention:
1. grinding method according to the present invention is divided into rough lapping and smooth grinding two procedures, sufficiently having merged rough lapping has
Help improve the two-fold advantage that material processes removal efficiency and smooth grinding facilitates improvement wafer surface processing quality, wafer grinding
Rapidoprint removal rate is fast, and wafer surface is relatively smooth, no obvious scratch, cleavage crack, the removing of interlayer cleavage and cleavage hole
The defects of.
2. anti-cleavage suspension lapping liquid and polyurethane resin-based viscoelastic consolidation mill in grinding method according to the present invention
The use of abrasive lapping pad facilitates the uniformity of abrasive grain and finished surface contact during improvement attrition process, reduction pair
The mechanics extension of the defects of remaining micro-crack of cutting surfaces, stress damage layer acts on, and gallium oxide wafer grinding is effectively inhibited to add
The generation of work cleavage defect.
3. grinding method according to the present invention uses two-sided cast iron plate rough lapping, the upper and lower two planes damage of chip becomes
It the symmetry of matter layer and stress distribution and has good uniformity, the polyurethane resin-based non-touch water-based of viscoelastic consolidation abrasive lapping pad
Partial shape keeps stronger stability, wafer bow and good flatness after attrition process.
4. grinding method according to the present invention is pre-processed using the annealing of optimum condition, processed wafer stress is effectively solved
The poor defect of angularity caused by asymmetry, flatness.
5. grinding method according to the present invention is high in machining efficiency, wafer surface quality is good, and selects lower-cost oxygen
Change aluminium abrasive material, effectively reduces attrition process cost.
Using grinding method of the present invention to gallium oxide wafer carry out attrition process, rough lapping material removing rate be 3.2 μm/
Min, surface roughness Ra numerical value reach 1.4 μm, and smooth grinding material removing rate is 0.7 μm/min, and surface roughness Ra numerical value reaches
To 110nm.Wafer bow, planarization are good, 2 μm of <, 3 μm of angularity Warp < of flatness TTV (2 inches), can get few
The attrition process surface of cleavage defect, low damaging layer.
Detailed description of the invention
Structural schematic diagram when Fig. 1 is step b rough lapping of the present invention.
Structural schematic diagram when Fig. 2 is step e smooth grinding of the present invention.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
It the present invention rather than limits the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention each
The modification of kind equivalent form falls within the application range as defined in the appended claims.
A kind of high-efficiency low-damage grinding method suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer of embodiment 1, including with
Lower step:
A, it anneals and pre-processes before rough lapping: monocrystalline gallium oxide wafer to be processed is loaded into restocking, the crystalline substance being put into annealing furnace
In alms bowl, gallium oxide crystal powder is added and covers chip, is passed through nitrogen and excludes air.First the relatively low-temperature region at 300 DEG C carries out
Then the lasting insulation annealing of 5h carries out the lasting insulation annealing of 9h, further in 1200 DEG C of height in 800 DEG C of medium temperature region
The 16h that temperature area carries out continues insulation annealing, is finally cooled to room temperature with 30 DEG C per hour, comes out of the stove.
B, rough lapping: the pretreated monocrystalline gallium oxide wafer that will anneal before step a rough lapping as shown in Figure 1 takes out, and sets
Reserved in the circle of the planetary gear 1 of cast iron plate twin grinder it is intracavitary, the gear teeth on planetary gear 1 respectively with centre wheel 2, outer gear ring
3 are meshed, and control the adjusting cylinder of top lap 4, move down top lap 4 and 5 upper surface of monocrystalline gallium oxide wafer to be processed
Uniformly contact；Anti- cleavage suspension grinding is continually fed between abrasive disk 4, lower abrasive disk 6 and monocrystalline gallium oxide wafer 5 then up
Liquid increases lubrication and cutting force when grinding；
Then start cast iron plate twin grinder, adjust control top lap 4 and lower abrasive disk 6 rotates backward, planetary gear 1
With the lower revolution in the same direction of abrasive disk 6 under the collective effect of centre wheel 2 and outer gear ring 3, grinding cutting effect is formed, monocrystalline is aoxidized
5 upper and lower surfaces of gallium chip synchronize symmetrical grinding；
Specific process parameter is that abrasive disk applies pressure 300g/cm2, top lap revolving speed is 20r/min, lower abrasive disk turns
Speed is 40r/min, and outer gear ring revolving speed is 15r/min, center wheel speed is 20r/min, the flow control of anti-cleavage suspension lapping liquid
System is in 30ml/min.
C, it anneals and pre-processes before smooth grinding: the gallium oxide wafer after rough lapping is loaded into restocking, the crystalline substance being put into annealing furnace
In alms bowl, gallium oxide crystal powder is added and covers chip, is passed through nitrogen and excludes air.First the relatively low-temperature region at 200 DEG C carries out
Then the lasting insulation annealing of 3h carries out the lasting insulation annealing of 6h, further in 1000 DEG C of height in 600 DEG C of medium temperature region
The 10h that temperature area carries out continues insulation annealing, is finally cooled to room temperature with 20 DEG C per hour, comes out of the stove.
D, patch: using the semi-automatic chip mounter of AWB-300C type, and the rough lapping later and is again passed by the pre- place of annealing
The monocrystalline gallium oxide wafer of reason is attached on the ceramic disk that diameter is 300mm；In monocrystalline gallium oxide wafer adhesive surface adding liquid
Wax simultaneously gets rid of wax, and revolving speed is 500r/min when getting rid of wax, and liquid wax is made to be uniformly distributed in the back side of monocrystalline gallium oxide wafer；It then will be upper
Monocrystalline gallium oxide wafer after wax moves on vacuum chuck, is pasted monocrystalline gallium oxide wafer by the mechanical arm with vacuum chuck
It invests on ceramic disk 7；Ceramic disk 7 is moved on cooling device after patch and is cooled down；
E, smooth grinding: as shown in Fig. 2, the ceramic disk 7 after the completion of the patch to be mounted on to the bistrique 8 of single-sided lapping machine
On, polyurethane resin-based viscoelastic consolidation abrasive lapping pad 10 is placed on abrasive disk 9, adjusts the cylinder knot being connected with bistrique 8
Then structure 11 is driven by a motor the rotation of abrasive disk 9, carries out smooth grinding；The polyurethane resin-based viscoelastic consolidation abrasive material is ground
Deionized water adding trough 12 is offered on mill pad (10), de-ionized water flow rate control is in 15ml/min during smooth grinding.
Specific process parameter is grinding pressure 200g/cm2, 9 diameter of abrasive disk is 914mm, and 9 revolving speed of abrasive disk is 28r/
Min, 7 revolving speed of ceramic disk are 20r/min, and grinding temperature is 40 DEG C.
The grinding experiment that monocrystalline gallium oxide wafer is carried out using above-mentioned grinding method, using Sartorisu CP 225D type
Precision electronic balance (precision 0.01mg) weighs to gallium oxide wafer before and after smooth grinding, and rough lapping material removing rate is 3.2
μm/min, smooth grinding material removing rate is 0.7 μm/min.Use VK-X100/X200 shape measure laser microscope detection 5 × 5
In μm plane domain, rough lapping surface roughness Ra numerical value is 1.416 μm, and smooth grinding surface roughness Ra numerical value is 110nm, and
Gallium oxide wafer surface is complete after smooth grinding process finishing, and observation is without obvious scratch under light.It can be seen that the present invention is implemented
The smooth grinding that lapping liquid in example 1 is suitable for gallium oxide wafer is processed.
A kind of high-efficiency low-damage grinding method suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer of embodiment 2, including with
Lower step:
A, it anneals and pre-processes before rough lapping: monocrystalline gallium oxide wafer to be processed is loaded into restocking, the crystalline substance being put into annealing furnace
In alms bowl, gallium oxide crystal powder is added and covers chip, is passed through nitrogen and excludes air.First the relatively low-temperature region at 280 DEG C carries out
Then the lasting insulation annealing of 4h carries out the lasting insulation annealing of 9h, further in 1100 DEG C of height in 750 DEG C of medium temperature region
The 15h that temperature area carries out continues insulation annealing, is finally cooled to room temperature with 30 DEG C per hour, comes out of the stove.
B, rough lapping: the pretreated monocrystalline gallium oxide wafer that will anneal before step a rough lapping as shown in Figure 1 takes out, and sets
Reserved in the circle of the planetary gear 1 of cast iron plate twin grinder it is intracavitary, the gear teeth on planetary gear 1 respectively with centre wheel 2, outer gear ring
3 are meshed, and control the adjusting cylinder of top lap 4, move down top lap 4 and 5 upper surface of monocrystalline gallium oxide wafer to be processed
Uniformly contact；Anti- cleavage suspension grinding is continually fed between abrasive disk 4, lower abrasive disk 6 and monocrystalline gallium oxide wafer 5 then up
Liquid increases lubrication and cutting force when grinding；
Then start cast iron plate twin grinder, adjust control top lap 4 and lower abrasive disk 6 rotates backward, planetary gear 1
With the lower revolution in the same direction of abrasive disk 6 under the collective effect of centre wheel 2 and outer gear ring 3, grinding cutting effect is formed, monocrystalline is aoxidized
5 upper and lower surfaces of gallium chip synchronize symmetrical grinding；
Specific process parameter is that abrasive disk applies pressure 200g/cm2, top lap revolving speed is 13r/min, lower abrasive disk turns
Speed is 28r/min, and outer gear ring revolving speed is 10r/min, center wheel speed is 16r/min, the flow control of anti-cleavage suspension lapping liquid
System is in 25ml/min.
C, it anneals and pre-processes before smooth grinding: the gallium oxide wafer after rough lapping is loaded into restocking, the crystalline substance being put into annealing furnace
In alms bowl, gallium oxide crystal powder is added and covers chip, is passed through nitrogen and excludes air.First the relatively low-temperature region at 220 DEG C carries out
Then the lasting insulation annealing of 3h carries out the lasting insulation annealing of 7h, further in 1000 DEG C of height in 650 DEG C of medium temperature region
The 10h that temperature area carries out continues insulation annealing, is finally cooled to room temperature with 20 DEG C per hour, comes out of the stove.
D, the rough lapping later and patch: is again passed by by annealing pretreatment using the semi-automatic chip mounter of AWB-300C type
Monocrystalline gallium oxide wafer, be attached at diameter be 300mm ceramic disk on；In monocrystalline gallium oxide wafer adhesive surface adding liquid wax
And wax is got rid of, revolving speed is 1000r/min when getting rid of wax, and liquid wax is made to be uniformly distributed in the back side of monocrystalline gallium oxide wafer；It then will be upper
Monocrystalline gallium oxide wafer after wax moves on vacuum chuck, is pasted monocrystalline gallium oxide wafer by the mechanical arm with vacuum chuck
It invests on ceramic disk 7；Ceramic disk 7 is moved on cooling device after patch and is cooled down；
Ceramic disk after patch is moved on cooling device and is cooled down, and prepares smooth grinding.
E, it as shown in Fig. 2, the ceramic disk 7 after the completion of the patch is mounted on the bistrique 8 of single-sided lapping machine, is grinding
Polyurethane resin-based viscoelastic consolidation abrasive lapping pad 10 is placed on disk 9, adjusts the air cylinder structure 11 being connected with bistrique 8, then
It is driven by a motor the rotation of abrasive disk 9, carries out smooth grinding；On the polyurethane resin-based viscoelastic consolidation abrasive lapping pad (10)
Deionized water adding trough 12 is offered, de-ionized water flow rate controls 12ml/min during smooth grinding.
Specific process parameter is grinding pressure 160g/cm2, 9 diameter of abrasive disk is 914mm, and 9 revolving speed of abrasive disk is 20r/
Min, 7 revolving speed of ceramic disk are 25r/min, and grinding temperature is 36 DEG C.
The grinding experiment that monocrystalline gallium oxide wafer is carried out using above-mentioned grinding method, using Sartorisu CP 225D type
Precision electronic balance (precision 0.01mg) weighs to gallium oxide wafer before and after smooth grinding, and rough lapping material removing rate is 2.9
μm/min, smooth grinding material removing rate is 0.6 μm/min.Use VK-X100/X200 shape measure laser microscope detection 5 × 5
In μm plane domain, rough lapping surface roughness Ra numerical value is 1.523 μm, and smooth grinding surface roughness Ra numerical value is 141nm, and
Gallium oxide wafer surface is complete after smooth grinding process finishing, and observation is without obvious scratch under light.It can be seen that the present invention is implemented
The smooth grinding that lapping liquid in example 2 is suitable for gallium oxide wafer is processed.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (8)
1. a kind of grinding method suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which comprises the following steps:
A, it anneals and pre-processes before rough lapping:
Monocrystalline gallium oxide cut crystal to be processed is loaded on ceramic machine frame, then ceramic machine frame is placed in annealing furnace
Brilliant alms bowl in, gallium oxide crystal powder is added in Xiang Jingbo, until fill up the gap between chip and ceramic machine frame and brilliant alms bowl,
And the monocrystalline gallium oxide cut crystal of annealed processing is needed with the covering of gallium oxide crystal powder, protective gas nitrogen is then passed to,
Discharge annealing furnace air, then heating is made annealing treatment；
B, rough lapping:
The pretreated monocrystalline gallium oxide wafer that will anneal before step a rough lapping takes out, and is placed in the row of cast iron plate twin grinder
The circle of star-wheel (1) is reserved intracavitary, and the gear teeth on planetary gear (1) are meshed with centre wheel (2), outer gear ring (3) respectively, in control
The adjusting cylinder of abrasive disk (4) moves down top lap (4) and uniformly contacts with monocrystalline gallium oxide wafer (5) upper surface to be processed,
Anti- cleavage suspension lapping liquid adding trough is offered on top lap (4)；Abrasive disk (4), lower abrasive disk (6) and monocrystalline then up
It is continually fed into anti-cleavage suspension lapping liquid between gallium oxide wafer (5), increases lubrication and cutting force when grinding；
Then start cast iron plate twin grinder, adjust control top lap (4) and lower abrasive disk (6) rotates backward, planetary gear
(1) it revolves in the same direction under the collective effect of centre wheel (2) and outer gear ring (3) with lower abrasive disk (6), forms grinding cutting effect,
Symmetrical grinding is synchronized to monocrystalline gallium oxide wafer (5) upper and lower surfaces；
C, the annealing pretreatment after rough lapping:
Monocrystalline gallium oxide wafer (5) after taking step b rough lapping, repeat the above steps a, brilliant to the monocrystalline gallium oxide after rough lapping
Piece (5) carries out annealing pretreatment again；
D, patch:
Step c pretreated monocrystalline gallium oxide wafer of annealing is placed in the chip placing groove on semi-automatic chip mounter, to monocrystalline
Gallium oxide wafer is heated；In monocrystalline gallium oxide wafer adhesive surface adding liquid wax and get rid of wax, when getting rid of wax revolving speed be 500~
1000r/min makes liquid wax be uniformly distributed in the back side of monocrystalline gallium oxide wafer；Then by the monocrystalline gallium oxide wafer after waxing
It moves on vacuum chuck, monocrystalline gallium oxide wafer is attached on ceramic disk (7) by the mechanical arm with vacuum chuck；Patch
After ceramic disk (7) moved on cooling device cool down；
E, smooth grinding:
Ceramic disk (7) after the completion of the patch is mounted on the bistrique (8) of single-sided lapping machine, is placed on abrasive disk (9)
Polyurethane resin-based viscoelastic consolidation abrasive lapping pad (10) adjusts the air cylinder structure (11) being connected with bistrique (8), then by electricity
Machine drives abrasive disk (9) rotation, carries out smooth grinding；It is opened on the polyurethane resin-based viscoelastic consolidation abrasive lapping pad (10)
Equipped with deionized water adding trough (12), de-ionized water flow rate is controlled in 8~15ml/min during smooth grinding.
2. the grinding method according to claim 1 for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which is characterized in that
Annealing pretreatment uses three-stage method for annealing before rough lapping described in step a, and the monocrystalline gallium oxide cut crystal in annealing furnace is first
The lasting insulation annealing of 3~5h is carried out at 200~300 DEG C；Then the lasting heat preservation of 6~10h is carried out at 600~800 DEG C
Annealing；Then 10~the 16h carried out at 1000~1200 DEG C again continues insulation annealing, is finally cooled down with 20~30 DEG C per hour
To room temperature, come out of the stove.
3. the grinding method according to claim 1 for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which is characterized in that
When step b planetary gear (1) circle reserves intracavitary placement monocrystalline gallium oxide wafer chip, monocrystalline gallium oxide wafer surface gets wet, single
Brilliant gallium oxide wafer be placed on planetary gear (1) circle reserve it is intracavitary after, then brush one times anti-cleavage suspension lapping liquid or deionized water, protect
Water holding profit.
4. the grinding method according to claim 1 for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which is characterized in that
Rough lapping described in step b, the pressure that top lap (4) applies are 200~300g/cm2, the revolving speed of top lap (4) is 13~
20r/min, the revolving speed of lower abrasive disk (6) are 28~40r/min, and the revolving speed of outer gear ring (3) is 8~15r/min, centre wheel (2)
Revolving speed be 4~30r/min, the flow control of anti-cleavage suspension lapping liquid is in 20~30ml/min.
5. the grinding method according to claim 4 for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which is characterized in that
The anti-cleavage suspension lapping liquid is made of the raw material of following weight percents:
Alumina powder: 5~10%；Dispersion thixotropic agent: 3~5%；Surfactant: 5~10%；Kerosene: 45~50%；Alkane
Hydrocarbon: 25~30%；PH adjusting agent: 2~3%；Defomaing agent: 0.02%；Fungicide: 0.02%；Help cleaning agent: 0.05%.
6. the grinding method described in claim 1 for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which is characterized in that step
Planetary gear (1) thickness of b cast iron plate twin grinder is 0.15~0.2mm thinner than monocrystalline gallium oxide wafer thickness.
7. the grinding method described in claim 1 for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which is characterized in that described
Polyurethane resin-based viscoelastic consolidation abrasive lapping pad (10) particle size range be 1.5~3.5 μm, alumina powder be α-
Al2O3, 99.9% or more purity.
8. the grinding method described in claim 1 for being suitable for hard crisp easy cleavage monocrystalline gallium oxide wafer, which is characterized in that step
During e smooth grinding, grinding pressure is 150~200g/cm2, abrasive disk (9) revolving speed is 10~60r/min, and ceramic disk (7) turns
Speed is 10~40r/min, and grinding temperature is 30~40 DEG C.
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