CN113858033B - Method for improving flatness of ground wafer and grinding machine - Google Patents
Method for improving flatness of ground wafer and grinding machine Download PDFInfo
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- CN113858033B CN113858033B CN202111058165.0A CN202111058165A CN113858033B CN 113858033 B CN113858033 B CN 113858033B CN 202111058165 A CN202111058165 A CN 202111058165A CN 113858033 B CN113858033 B CN 113858033B
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- 238000000227 grinding Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 20
- 239000010432 diamond Substances 0.000 claims description 20
- 238000005498 polishing Methods 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 12
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000001050 lubricating effect Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 67
- 229910010271 silicon carbide Inorganic materials 0.000 description 30
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 30
- 238000012545 processing Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003921 oil Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001141 Ductile iron Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Abstract
The invention provides a method for improving the flatness of a ground wafer and a grinding machine, wherein the method for improving the flatness of the ground wafer comprises the following steps: (1) Deepening damage on the surface of the wafer to form a damaged layer; (2) Annealing the wafer subjected to the damage deepening treatment; (3) Carrying out double-sided grinding on the annealed wafer to remove the damaged layer; (4) And thinning the wafer after double-side grinding. The method can improve the flatness of the wafer, improve the unevenness of the wafer caused by insufficient cutting capability and simultaneously improve the consistency of the surface type of the polished wafer.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for improving the flatness of a ground wafer and a grinding machine.
Background
The silicon carbide as a representative of the third generation semiconductor material has the unique performances of large forbidden band width, high breakdown electric field, large heat conductivity, high electron saturation drift velocity, small dielectric constant and the like, and can be used for manufacturing various high-temperature-resistant high-frequency high-power devices. With the rapid development of the semiconductor industry, the surface shape of the silicon carbide substrate is required to be higher, and the processing technical problem needs to be continuously overcome to meet the future development requirement of the industry.
Throughout the preparation of the silicon carbide substrate, the main factors affecting the shape of the wafer depend on the processing techniques of the cutting section and the grinding section. Since the hardness of silicon carbide is very high, higher than that of sapphire, and is second to diamond, the influence factor of the cutting capacity is more in the cutting process, the flatness of the wafer is improved only by cutting, the difficulty is very high, and the problem that the wafer needs to be ground for further solution is solved. Although the prior domestic grinding processing technology of the silicon carbide wafer can process some wafers with better flatness, the wafers with relatively poorer flatness can not be effectively processed, and the cost is wasted.
In view of the shortcomings of the existing silicon carbide grinding technology, a method for improving the flatness of the silicon carbide wafer after grinding and a grinding machine used in the method are urgently needed to be developed.
Disclosure of Invention
In order to solve the defects in the prior art, the main object of the present invention is to provide a method for improving the flatness of a polished wafer and a polishing machine, wherein the method can improve the flatness of the wafer, improve the unevenness of the wafer caused by insufficient cutting capability, and improve the uniformity of the surface shape of the polished wafer.
In order to achieve the above object, according to a first aspect of the present invention, there is provided a method of improving flatness of a wafer after grinding.
The method for improving the flatness of the ground wafer comprises the following steps:
(1) Deepening damage on the surface of the wafer to form a damaged layer;
(2) Annealing the wafer subjected to the damage deepening treatment;
(3) Carrying out double-sided grinding on the annealed wafer to remove the damaged layer;
(4) And thinning the wafer after double-side grinding.
Further, before damage deepening treatment, the bending degree of the wafer is more than or equal to 30 microns, and the warping degree is more than or equal to 70 microns.
Further, the thickness of the damage layer is 7 to 11 μm.
Further, in the step (1), a grinder is used for the damage deepening treatment; wherein the grinding fluid is lubricating fluid prepared from grinding oil and water according to a certain volume ratio, and the grinding pressure is 30-35 g/cm 2 The grinding time is 8-13 min.
Further, in the step (2), the annealing treatment is constant temperature annealing at 1000-1100 ℃ for 10-12 h.
Further, in the step (3), a double-sided grinder is adopted for grinding; wherein, the boron carbide grinding fluid with the medium granularity of 70 mu m is adopted, the grinding rate is 0.9-1.1 mu m/min, and the grinding removal amount is 45-50 mu m.
Further, in the step (4), a double-sided polishing machine is adopted for thinning treatment; wherein, the diamond grinding fluid with the medium granularity of 9 mu m is adopted, the thinning rate is 0.6-0.8 mu m/min, and the removal amount is 55-60 mu m.
Furthermore, the method also comprises the step of cleaning the thinned wafer.
In order to achieve the above object, according to a second aspect of the present invention, there is provided a grinding mill.
The grinder is used for deepening damage to the surface of the wafer in the method; wherein the grinder comprises an upper plate, a lower plate and diamond particles plated on the upper plate.
Further, the diamond particles have a medium particle diameter of 28 to 32 μm and a height of 19.5 to 22.5 μm.
The invention has the technical effects that:
1. because the carbon surface and the silicon surface of the silicon carbide wafer are respectively subjected to damage deepening treatment and annealed, the grinding processing efficiency can be improved in the subsequent grinding process, and the fragment rate caused by poor flatness of the wafer in grinding and thinning can be reduced.
2. The stress release caused by grinding after annealing can be accelerated due to the damage deepening treatment on the surface of the wafer.
3. The damage to the surface of the wafer is deepened, so that the consistency of the thickness of the surface of the wafer can be effectively improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flow chart of a method for improving the flatness of a silicon carbide wafer after grinding according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a diamond disk grinder according to an embodiment of the present invention;
FIG. 3 is a top view of a silicon carbide wafer processed on a grinder according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a double-sided polishing machine according to an embodiment of the present invention during thinning processing.
In the figure:
1. hanging the plate; 2. diamond particles; 3. a first carrier; 4. a bottom wall; 5. an outer gear; 6. an internal gear; 7. a silicon carbide wafer; 8. polishing the upper disc; 9. polishing the lower disc; 10. a second carrier; 11. and (7) polishing cloth.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
As shown in fig. 1, the method for improving the flatness of the silicon carbide wafer after grinding in the embodiment of the invention comprises the following steps:
first, a 6 inch cut silicon carbide wafer with a center thickness of 550 μm was selected for the wafer, with a bow of greater than 30 μm and a warp of greater than 70 μm.
The flatness index of the wafer comprises the curvature and the warping degree of the wafer, and the method for improving the flatness of the ground wafer is more suitable for the wafer with the curvature being more than 30 mu m and the warping degree being more than 70 mu m; the curvature of the wafer processed by the method is less than or equal to 15 microns, the warping degree is less than or equal to 15 microns, and compared with the curvature of the wafer processed by the traditional processing method, the curvature of the wafer is about 20 microns, the warping degree is about 30 microns, and the method for improving the flatness of the wafer after grinding has an obvious effect.
Of course, wafer bow of less than 30 μm and warp of less than 70 μm may be used, but the smaller the numerical values of wafer bow and warp before processing, the smaller the change in the effect before and after processing, so the effect after processing using this method is insignificant for wafers having bow of less than 30 μm and warp of less than 70 μm.
Secondly, carrying out damage deepening treatment on the silicon surface of the silicon carbide wafer; and then carrying out damage deepening treatment on the carbon surface of the silicon carbide wafer.
Respectively carrying out damage deepening treatment on the silicon surface and the carbon surface of the silicon carbide wafer by adopting grinding equipment, wherein the grinding fluid is lubricating fluid prepared from grinding oil and water according to the volume ratio of 1 2 And 15 silicon carbide wafers with the size of 6 inches can be processed in a single batch, and the grinding time is 10min.
In the examples of the present invention, the grinding oil is a lubricating oil conventionally used in the art.
In the embodiment of the invention, the grinding device is a diamond disk grinder which is mainly used for carrying out damage deepening treatment on the surface of the wafer, namely, the diamond disk grinder is used for carrying out damage deepening treatment on the silicon surface and the carbon surface of the silicon carbide wafer respectively.
As shown in fig. 2 and 3 in combination, the diamond disk grinder includes an upper disk 1, a lower disk 4, and diamond grains 2 disposed on the upper disk 1, wherein: the upper disc 1 is a stainless steel disc, the stainless steel disc and the diamond particles 2 electroplated thereon are combined to form a diamond grinding disc, and of course, other fixing manners can be adopted to fix the diamond particles 2 on the upper disc 1; the lower disc 4 is a nodular cast iron disc, and the hardness is QT450 (HB 150-160).
In the embodiment of the present invention, the diamond particles 2 have a medium particle size in the range of 28 to 32 μm and a height in the range of 19.5 to 22.5 μm to achieve the optimal grinding effect.
As shown in fig. 2 and 3, the silicon carbide wafer 7 is placed on the first carrier 3, the first carrier 3 is placed on the lower disc 4 and is located between the external gear 5 and the internal gear 6, and in actual operation, after the silicon surface of the silicon carbide wafer 7 is ground, the silicon surface needs to be turned over to grind the carbon surface of the silicon carbide wafer 7.
It should be noted that the first carrier 3, the external gear 5 and the internal gear 6 are all of conventional design structures, and are not described in detail.
In the embodiment of the present invention, the rotation speed ratio of the upper disc 1 and the lower disc 4 of the diamond disc grinder may be set to 1, and the rotation speed ratio of the outer gear 5 and the inner gear 6 may be set to 4.5, as shown in table 1 below. Of course, the machining requirements can be met by adjusting the machining conditions according to specific requirements.
Table 1:
| rotational speed of the upper plate | Rotational speed of lower disc | Rotational speed of external gear | Internal gear rotational speed |
| 10rpm | 30rpm | 12rpm | 7.5rpm |
Through a large number of researches and experiments, the invention discovers that the thickness of a damaged layer on the surface of the silicon carbide wafer 7 detected by a roughness tester after processing or the depth of a damaged part should be controlled to be 7-11 mu m, and the thickness of the damaged layer is most suitable at present. The damage depth of the damaged layer of the wafer cannot be too great, otherwise the quality of the wafer will be affected, making it easier for the wafer to crack at deep damages.
And then, annealing the silicon carbide wafer after the damage deepening treatment.
In the embodiment of the invention, the annealing treatment adopts constant temperature annealing, the temperature is set to 1000-1100 ℃, and the constant temperature time is 10 hours. Wherein the wafers are stacked during the annealing process.
And then, carrying out double-sided grinding on the annealed silicon carbide wafer to remove the damaged layer.
In the embodiment of the invention, boron carbide grinding fluid with medium grain size of 70 μm is adopted for double-sided grinding, the grinding rate is 0.9-1.1 μm/min, and the grinding removal amount is 45-50 μm.
The double-sided grinding adopts a 16B double-sided grinding machine, wherein the upper disc and the lower disc of the 16B double-sided grinding machine are both nodular cast iron discs, and the hardness is QT450 (HB 150-160).
It should be noted that the equipment used in the double-side grinding is conventional in the prior art.
And finally, thinning the silicon carbide wafer after the damage layer is removed.
In the embodiment of the invention, a double-side polishing machine is adopted to carry out thinning treatment on the silicon carbide wafer, wherein diamond grinding liquid with the medium granularity of 9 mu m is adopted to carry out double-side grinding, the grinding rate is 0.6-0.8 mu m/min, and the grinding removal amount is 55-60 mu m.
As shown in fig. 4, polishing cloths 11 are attached to the contact surfaces of the upper polishing disk 8 and the lower polishing disk 9 of the double-side polishing machine, the silicon carbide wafer 7 is placed on a second carrier 10, and the silicon carbide wafer 7 is subjected to thinning grinding through the upper polishing disk 8 and the lower polishing disk 9.
After the thinning treatment, the flatness-improving process of the silicon carbide wafer 7 is completed.
Since some media such as grinding fluid and the like still remain on the wafer after the thinning treatment, a cleaning step is also included after the grinding and thinning, namely the surface of the silicon carbide wafer is cleaned to remove the residual grinding fluid.
It is to be noted that the term "comprises" and any variations thereof in the description and claims of this invention are intended to cover non-exclusive inclusions, for example, comprising a list of elements does not necessarily have to be limited to those elements explicitly listed, but may include other elements not explicitly listed or inherent to such elements.
In the present invention, the terms "upper", "lower", "bottom", "top", "left", "right", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the invention and its embodiments and are not intended to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meanings of these terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.
In addition, technical solutions between the embodiments may be combined with each other, but must be based on the realization of the technical solutions by a person skilled in the art, and when the technical solutions are contradictory to each other or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. A method for improving the flatness of a wafer after grinding is characterized by comprising the following steps:
(1) Deepening damage on the surface of the wafer to form a damaged layer;
(2) Annealing the wafer subjected to the damage deepening treatment;
(3) Carrying out double-sided grinding on the annealed wafer to remove the damaged layer;
(4) Thinning the wafer after double-side grinding;
in the step (1), a grinder is adopted for the damage deepening treatment; wherein the grinding fluid is lubricating fluid prepared from grinding oil and water according to a certain volume ratio, and the grinding pressure is 30-35 g/cm 2 The grinding time is 8-13 min;
the grinder comprises an upper disc, a lower disc and diamond particles electroplated on the upper disc; the diamond particles have a medium particle diameter of 28 to 32 μm and a height of 19.5 to 22.5 μm.
2. The method as claimed in claim 1, wherein the wafer has a bow of 30 μm or more and a warp of 70 μm or more before the damage deepening treatment.
3. The method as claimed in claim 1, wherein the damaged layer has a thickness of 7-11 μm.
4. The method for improving the flatness of the ground wafer as claimed in claim 1, wherein in the step (2), the annealing treatment is constant temperature annealing at 1000-1100 ℃ for 10-12 h.
5. The method for improving the flatness of the ground wafer as claimed in claim 1, wherein in the step (3), the grinding is performed by a double-sided grinder; wherein, the boron carbide grinding fluid with the medium granularity of 70 mu m is adopted, the grinding rate is 0.9-1.1 mu m/min, and the grinding removal amount is 45-50 mu m.
6. The method for improving the flatness of the wafer after grinding as recited in claim 1, wherein in the step (4), the thinning process employs a double-sided polishing machine; wherein, the diamond grinding fluid with the medium granularity of 9 mu m is adopted, the thinning rate is 0.6-0.8 mu m/min, and the removal amount is 55-60 mu m.
7. The method of claim 1, further comprising cleaning the thinned wafer.
8. A grinder for deepening damage to a surface of a wafer in a method according to any one of claims 1 to 7; wherein the grinder comprises an upper plate, a lower plate and diamond particles plated on the upper plate.
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| CN202111058165.0A CN113858033B (en) | 2021-09-09 | 2021-09-09 | Method for improving flatness of ground wafer and grinding machine |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2110115C1 (en) * | 1996-05-13 | 1998-04-27 | Научно-исследовательский институт измерительных систем | Process of preparation of silicon substrates |
| CN102543718A (en) * | 2010-12-14 | 2012-07-04 | 北京天科合达蓝光半导体有限公司 | Method for decreasing warp and bow of silicon carbide wafer |
| CN110391137A (en) * | 2018-04-20 | 2019-10-29 | 半导体元件工业有限责任公司 | System and correlation technique is thinned in semiconductor crystal wafer |
| CN113046825A (en) * | 2019-12-27 | 2021-06-29 | 北京天科合达半导体股份有限公司 | High-quality SiC single crystal wafer and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2110115C1 (en) * | 1996-05-13 | 1998-04-27 | Научно-исследовательский институт измерительных систем | Process of preparation of silicon substrates |
| CN102543718A (en) * | 2010-12-14 | 2012-07-04 | 北京天科合达蓝光半导体有限公司 | Method for decreasing warp and bow of silicon carbide wafer |
| CN110391137A (en) * | 2018-04-20 | 2019-10-29 | 半导体元件工业有限责任公司 | System and correlation technique is thinned in semiconductor crystal wafer |
| CN113046825A (en) * | 2019-12-27 | 2021-06-29 | 北京天科合达半导体股份有限公司 | High-quality SiC single crystal wafer and preparation method thereof |
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Effective date of registration: 20230508 Address after: 321000 south side of Building 1, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province Patentee after: Jinhua Bolante New Material Co.,Ltd. Address before: 321000 plant 3, No. 2688, south 2nd Ring West Road, qiubin street, Wucheng District, Jinhua City, Zhejiang Province (self declaration) Patentee before: Zhejiang Fuxin Microelectronics Technology Co.,Ltd. |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Method and Grinder for Improving the Flatness of Wafer Grinding Effective date of registration: 20230619 Granted publication date: 20221220 Pledgee: Bank of Jinhua Limited by Share Ltd. science and Technology Branch Pledgor: Jinhua Bolante New Material Co.,Ltd. Registration number: Y2023980044592 |