CN112658974A - YAG wafer grinding method - Google Patents
YAG wafer grinding method Download PDFInfo
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- CN112658974A CN112658974A CN202011498176.6A CN202011498176A CN112658974A CN 112658974 A CN112658974 A CN 112658974A CN 202011498176 A CN202011498176 A CN 202011498176A CN 112658974 A CN112658974 A CN 112658974A
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- grinding
- wafer
- yag
- yag wafer
- deionized water
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000008367 deionised water Substances 0.000 claims abstract description 20
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims abstract description 14
- 238000003672 processing method Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 5
- 239000010432 diamond Substances 0.000 claims abstract description 5
- 239000000654 additive Substances 0.000 claims description 12
- 230000000996 additive effect Effects 0.000 claims description 12
- 239000002518 antifoaming agent Substances 0.000 claims description 12
- 239000012188 paraffin wax Substances 0.000 claims description 12
- 239000002270 dispersing agent Substances 0.000 claims description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 8
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- HFQQZARZPUDIFP-UHFFFAOYSA-M sodium;2-dodecylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HFQQZARZPUDIFP-UHFFFAOYSA-M 0.000 claims description 6
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- 239000004471 Glycine Substances 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- RQFQJYYMBWVMQG-IXDPLRRUSA-N chitotriose Chemical compound O[C@@H]1[C@@H](N)[C@H](O)O[C@H](CO)[C@H]1O[C@H]1[C@H](N)[C@@H](O)[C@H](O[C@H]2[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O2)N)[C@@H](CO)O1 RQFQJYYMBWVMQG-IXDPLRRUSA-N 0.000 claims description 3
- 239000003906 humectant Substances 0.000 claims description 3
- 229920000570 polyether Polymers 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 6
- 230000006378 damage Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 41
- 238000012545 processing Methods 0.000 description 7
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Images
Abstract
The invention provides a YAG wafer grinding processing method, which comprises the following steps of S1: providing a plane grinding machine, providing a YAG wafer, setting the YAG wafer to have an A surface and a B surface, grinding the A surface, and dripping a first grinding liquid in the grinding process; s2: grinding the surface B, and dripping a first grinding fluid in the grinding process; s3: continuously grinding the surface B, wherein the grinding process is low-price grinding fluid II; s4: grinding the surface A, and dripping second grinding fluid in the grinding process; s5: fixing a diamond bonded abrasive particle disc on a grinding disc, grinding the surface A, and continuously injecting deionized water in the grinding process; s6: grinding the surface B, and continuously injecting deionized water in the grinding process; s7: ultrasonically cleaning a wafer; s8: the wafer is placed in an annealing furnace. According to the YAG wafer grinding processing method, the free abrasive and the fixed abrasive are adopted to grind the YAG wafer in sequence, so that the material removal rate is high, the wafer surface type precision is high, and the surface damage is small.
Description
Technical Field
The invention relates to a grinding processing method of a YAG wafer.
Background
YAG materials have excellent optical properties, are widely applied to laser weapons, laser industry and laser medical treatment, and the development of modern laser technology also puts higher requirements on the processing quality of YAG materials.
YAG wafer grinding processing belongs to the ultra-precision processing technology of hard and brittle materials, the existing grinding processing technology of YAG comprises a double-sided planetary grinding technology and a single-sided free abrasive grinding technology, wherein the double-sided planetary grinding technology has high processing efficiency, when the thickness of a wafer is thinner, a planet carrier is difficult to manufacture, the strength is not enough, and the wafer is not suitable for processing an ultrathin wafer; the single-side free abrasive technology has high processing efficiency, but the utilization rate of the abrasive is low, the processed crystal surface is easy to generate deep grinding marks and subsurface damage, and the surface shape precision of the wafer is also poor.
In view of the above, there is a need to improve the conventional method for polishing YAG wafers to solve the above problems.
Disclosure of Invention
The invention aims to provide a grinding processing method of a YAG wafer, which aims to solve the problem in the prior art.
In order to achieve the above object, a method for grinding a YAG wafer, comprising: the grinding processing method of the YAG wafer comprises the following steps:
s1: providing a plane grinding machine, providing a YAG wafer, setting the YAG wafer to have an A surface and a B surface, sticking the B surface on a carrying disc by using paraffin, grinding the A surface, and dripping a first grinding liquid in the grinding process;
s2: taking down the YAG wafer, sticking the surface A on a carrying disc by using paraffin, grinding the surface B, and dripping a first grinding liquid in the grinding process;
s3: continuously grinding the surface B, wherein the grinding process is low-price grinding fluid II;
s4: taking down the YAG wafer, sticking the surface B on a carrying disc by using paraffin, grinding the surface A, and dripping second grinding liquid in the grinding process;
s5: fixing a diamond bonded abrasive particle disc on a grinding disc, grinding the surface A, and continuously injecting deionized water in the grinding process;
s6: taking down the YAG wafer, pasting the surface A on a carrying disc by paraffin, grinding the surface B, and continuously injecting deionized water in the grinding process;
s7: ultrasonically cleaning the wafer, wherein the cleaning solution is deionized water, and the cleaning time is 30 min;
s8: putting the wafer into an annealing furnace, heating the annealing furnace to 1100 ℃ at a heating rate of 70 ℃/h, preserving the temperature for 36h, and then cooling the annealing furnace to room temperature at a cooling rate of 50 ℃/h.
As a further improvement of the present invention, the first polishing liquid in steps S1 and S2 includes: abrasive particles, deionized water and an additive, wherein the abrasive particles are any one of boron carbide and silicon carbide, the particle size is 10-14 mu m, and the content is 6 wt%; the additive is one of dispersing agent SDS and SDBS, the content is 0.4 wt%, and the humectant is one of glycerol and triethanolamine, the content is 0.4 wt%.
As a further improvement of the invention, the grinding pressure in the step S1 and the step S2 is 0.4MPa, and the rotating speed is 60-80 r/min.
As a further improvement of the invention, the flow rate of the grinding fluid in the step S1 and the step S2 is 6-9 ml/min, and the grinding time is 15 min.
As a further improvement of the present invention, the second polishing liquid in steps S3 and S4 includes: abrasive particles, deionized water and an additive, wherein the abrasive particles are alumina, the granularity is 1-3 mu m, and the content is 6 wt%; the additive is one of complex glycine and chitosan oligosaccharide, and the content is 0.3 wt%.
As a further improvement of the invention, the second grinding fluid in the step S3 and the step S4 further comprises a dispersant and an antifoaming agent, wherein the dispersant is one of FAOA, SDS and SDBS, and the content is 0.4 wt%; the defoaming agent is any polyether defoaming agent, and the content of the defoaming agent is 0.1 wt%.
As a further improvement of the invention, the grinding pressure in the step S3 and the step S4 is 0.3MPa, and the rotating speed is 80-100 r/min.
As a further improvement of the invention, the flow rate of the grinding fluid in the step S3 and the step S4 is 6-9 ml/min, and the grinding time is 60-90 min.
As a further improvement of the invention, in the steps S5 and S6, the rotating speed is 120-150 r/min, and the grinding pressure is 0.15 MPa.
As a further improvement of the invention, the grinding time in the steps S5 and S6 is 30min, and the flow rate of the deionized water is 6-9 ml/min.
The invention has the beneficial effects that: according to the YAG wafer grinding processing method, the free abrasive and the fixed abrasive are adopted to grind the YAG wafer in sequence, so that the material removal rate is high, the wafer surface type precision is high, and the surface damage is small.
Drawings
FIG. 1 is a flowchart of a method for grinding a YAG wafer according to the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art. In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, a method for grinding a YAG wafer, comprising: the grinding processing method of the YAG wafer comprises the following steps:
s1: providing a plane grinding machine, providing a YAG wafer, setting the YAG wafer to have an A surface and a B surface, sticking the B surface on a carrying disc by using paraffin, grinding the A surface, and dripping a first grinding liquid in the grinding process;
s2: taking down the YAG wafer, sticking the surface A on a carrying disc by using paraffin, grinding the surface B, and dripping a first grinding liquid in the grinding process;
s3: continuously grinding the surface B, wherein the grinding process is low-price grinding fluid II;
s4: taking down the YAG wafer, sticking the surface B on a carrying disc by using paraffin, grinding the surface A, and dripping second grinding liquid in the grinding process;
s5: fixing a diamond bonded abrasive particle disc on a grinding disc, grinding the surface A, and continuously injecting deionized water in the grinding process;
s6: taking down the YAG wafer, pasting the surface A on a carrying disc by paraffin, grinding the surface B, and continuously injecting deionized water in the grinding process;
s7: ultrasonically cleaning the wafer, wherein the cleaning solution is deionized water, and the cleaning time is 30 min;
s8: putting the wafer into an annealing furnace, heating the annealing furnace to 1100 ℃ at a heating rate of 70 ℃/h, preserving the temperature for 36h, and then cooling the annealing furnace to room temperature at a cooling rate of 50 ℃/h.
The first polishing liquid in steps S1 and S2 includes: abrasive particles, deionized water and an additive, wherein the abrasive particles are any one of boron carbide and silicon carbide, the particle size is 10-14 mu m, and the content is 6 wt%; the additive is one of dispersing agent SDS and SDBS, the content is 0.4 wt%, and the humectant is one of glycerol and triethanolamine, the content is 0.4 wt%.
In the step S1 and the step S2, the grinding pressure is 0.4MPa, the rotation speed is 60-80 r/min, the flow rate of the grinding fluid is 6-9 ml/min, and the grinding time is 15 min.
Step S1 and step S2 realize rough grinding of the YAG wafer.
The second polishing liquid in steps S3 and S4 includes: abrasive particles, deionized water, an additive, a dispersing agent and a defoaming agent, wherein the abrasive particles are aluminum oxide, the particle size is 1-3 mu m, and the content is 6 wt%; the additive is one of complex glycine and chitosan oligosaccharide, and the content is 0.3 wt%; the dispersant is one of FAOA, SDS and SDBS, and the content is 0.4 wt%; the defoaming agent is any polyether defoaming agent, and the content of the defoaming agent is 0.1 wt%.
In the step S3 and the step S4, the grinding pressure is 0.3MPa, the rotation speed is 80-100 r/min, the flow rate of the grinding fluid is 6-9 ml/min, and the grinding time is 60-90 min.
Step S3 and step S4 realize the finish grinding of the YAG wafer.
In the steps S5 and S6, the rotation speed is 120-150 r/min, the grinding pressure is 0.15MPa, the grinding time is 30min, and the flow of the deionized water is 6-9 ml/min.
In the steps S5 and S6, the wafer is ground by using the fine abrasive grain consolidated abrasive disk, so that the YAG wafer has high surface shape precision and good surface appearance. In this embodiment, the fine abrasive grain fixed abrasive disc is selected to be a diamond fixed abrasive disc.
According to the grinding processing method of the YAG wafer, the free abrasive grinding technology and the fixed abrasive grinding technology are combined, so that the high flatness and the surface quality of the YAG wafer are ensured under the condition of improving the grinding efficiency, the defects caused by a single grinding mode are avoided, and the grinding processing method has a good grinding effect; the invention adopts effective annealing to reduce the residual stress in the YAG wafer, thereby achieving better use effect. The two polishing solutions of the invention have no waste gas, no harm to human body, high efficiency, safety and economy.
According to the YAG wafer grinding processing method, the free abrasive and the fixed abrasive are adopted to grind the YAG wafer in sequence, so that the material removal rate is high, the wafer surface type precision is high, and the surface damage is small.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A YAG wafer grinding processing method is characterized in that: the grinding processing method of the YAG wafer comprises the following steps:
s1: providing a plane grinding machine, providing a YAG wafer, setting the YAG wafer to have an A surface and a B surface, sticking the B surface on a carrying disc by using paraffin, grinding the A surface, and dripping a first grinding liquid in the grinding process;
s2: taking down the YAG wafer, sticking the surface A on a carrying disc by using paraffin, grinding the surface B, and dripping a first grinding liquid in the grinding process;
s3: continuously grinding the surface B, wherein the grinding process is low-price grinding fluid II;
s4: taking down the YAG wafer, sticking the surface B on a carrying disc by using paraffin, grinding the surface A, and dripping second grinding liquid in the grinding process;
s5: fixing a diamond bonded abrasive particle disc on a grinding disc, grinding the surface A, and continuously injecting deionized water in the grinding process;
s6: taking down the YAG wafer, pasting the surface A on a carrying disc by paraffin, grinding the surface B, and continuously injecting deionized water in the grinding process;
s7: ultrasonically cleaning the wafer, wherein the cleaning solution is deionized water, and the cleaning time is 30 min;
s8: putting the wafer into an annealing furnace, heating the annealing furnace to 1100 ℃ at a heating rate of 70 ℃/h, preserving the temperature for 36h, and then cooling the annealing furnace to room temperature at a cooling rate of 50 ℃/h.
2. The method for grinding a YAG wafer as set forth in claim 1, wherein: the first polishing liquid in steps S1 and S2 includes: abrasive particles, deionized water and an additive, wherein the abrasive particles are any one of boron carbide and silicon carbide, the particle size is 10-14 mu m, and the content is 6 wt%; the additive is one of dispersing agent SDS and SDBS, the content is 0.4 wt%, and the humectant is one of glycerol and triethanolamine, the content is 0.4 wt%.
3. The method for grinding a YAG wafer as set forth in claim 2, wherein: in the step S1 and the step S2, the grinding pressure is 0.4MPa, and the rotation speed is 60-80 r/min.
4. The method for grinding a YAG wafer as set forth in claim 3, wherein: in the step S1 and the step S2, the flow rate of the grinding fluid is 6-9 ml/min, and the grinding time is 15 min.
5. The method for grinding a YAG wafer as set forth in claim 1, wherein: the second polishing liquid in steps S3 and S4 includes: abrasive particles, deionized water and an additive, wherein the abrasive particles are alumina, the granularity is 1-3 mu m, and the content is 6 wt%; the additive is one of complex glycine and chitosan oligosaccharide, and the content is 0.3 wt%.
6. The method for grinding a YAG wafer as set forth in claim 1, wherein: the second grinding fluid in the step S3 and the step S4 further comprises a dispersing agent and an antifoaming agent, wherein the dispersing agent is one of FAOA, SDS and SDBS, and the content of the dispersing agent is 0.4 wt%; the defoaming agent is any polyether defoaming agent, and the content of the defoaming agent is 0.1 wt%.
7. The method for grinding a YAG wafer as set forth in claim 6, wherein: in the step S3 and the step S4, the grinding pressure is 0.3MPa, and the rotation speed is 80-100 r/min.
8. The method for grinding a YAG wafer as recited in claim 7, wherein: in the step S3 and the step S4, the flow rate of the grinding fluid is 6-9 ml/min, and the grinding time is 60-90 min.
9. The method for grinding a YAG wafer as set forth in claim 1, wherein: in the steps S5 and S6, the rotating speed is 120-150 r/min, and the grinding pressure is 0.15 MPa.
10. The method for grinding a YAG wafer according to claim 9, wherein: in the steps S5 and S6, the grinding time is 30min, and the flow rate of the deionized water is 6-9 ml/min.
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| CN202011498176.6A CN112658974A (en) | 2020-12-17 | 2020-12-17 | YAG wafer grinding method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113480942A (en) * | 2021-08-06 | 2021-10-08 | 大连理工大学 | Polycrystalline YAG ceramic chemical mechanical polishing solution |
| CN114800252A (en) * | 2022-03-23 | 2022-07-29 | 浙江富芯微电子科技有限公司 | Surface grinding method of silicon carbide wafer |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337084A (en) * | 2011-07-25 | 2012-02-01 | 郑州磨料磨具磨削研究所 | Grinding fluid for processing LED (light-emitting diode) substrate and preparation method thereof |
| CN102909650A (en) * | 2012-11-01 | 2013-02-06 | 成都精密光学工程研究中心 | Surface processing method of strip laser medium |
| CN104999365A (en) * | 2015-06-16 | 2015-10-28 | 东莞市中微纳米科技有限公司 | Sapphire wafer grinding and polishing method |
| CN107987732A (en) * | 2017-12-19 | 2018-05-04 | 北京航天赛德科技发展有限公司 | A kind of polishing fluid for sapphire plane polishing and preparation method thereof |
| CN108219678A (en) * | 2016-12-21 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of diamond grinding fluid and preparation method thereof |
| CN109251681A (en) * | 2018-11-12 | 2019-01-22 | 蓝思科技（长沙）有限公司 | A kind of polishing fluid and preparation method thereof |
| CN109396967A (en) * | 2018-12-12 | 2019-03-01 | 中国电子科技集团公司第四十六研究所 | A kind of cmp method for cadmium selenide crystal |
| CN110539209A (en) * | 2019-08-15 | 2019-12-06 | 大连理工大学 | processing method of thin plate-shaped sapphire wafer |
| US20200381243A1 (en) * | 2018-02-21 | 2020-12-03 | Sumco Corporation | Wafer production method |
| CN112608717A (en) * | 2020-12-17 | 2021-04-06 | 长沙蓝思新材料有限公司 | Coarse grinding fluid and preparation method thereof |
-
2020
- 2020-12-17 CN CN202011498176.6A patent/CN112658974A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337084A (en) * | 2011-07-25 | 2012-02-01 | 郑州磨料磨具磨削研究所 | Grinding fluid for processing LED (light-emitting diode) substrate and preparation method thereof |
| CN102909650A (en) * | 2012-11-01 | 2013-02-06 | 成都精密光学工程研究中心 | Surface processing method of strip laser medium |
| CN104999365A (en) * | 2015-06-16 | 2015-10-28 | 东莞市中微纳米科技有限公司 | Sapphire wafer grinding and polishing method |
| CN108219678A (en) * | 2016-12-21 | 2018-06-29 | 蓝思科技（长沙）有限公司 | A kind of diamond grinding fluid and preparation method thereof |
| CN107987732A (en) * | 2017-12-19 | 2018-05-04 | 北京航天赛德科技发展有限公司 | A kind of polishing fluid for sapphire plane polishing and preparation method thereof |
| US20200381243A1 (en) * | 2018-02-21 | 2020-12-03 | Sumco Corporation | Wafer production method |
| CN109251681A (en) * | 2018-11-12 | 2019-01-22 | 蓝思科技（长沙）有限公司 | A kind of polishing fluid and preparation method thereof |
| CN109396967A (en) * | 2018-12-12 | 2019-03-01 | 中国电子科技集团公司第四十六研究所 | A kind of cmp method for cadmium selenide crystal |
| CN110539209A (en) * | 2019-08-15 | 2019-12-06 | 大连理工大学 | processing method of thin plate-shaped sapphire wafer |
| CN112608717A (en) * | 2020-12-17 | 2021-04-06 | 长沙蓝思新材料有限公司 | Coarse grinding fluid and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113480942A (en) * | 2021-08-06 | 2021-10-08 | 大连理工大学 | Polycrystalline YAG ceramic chemical mechanical polishing solution |
| CN114800252A (en) * | 2022-03-23 | 2022-07-29 | 浙江富芯微电子科技有限公司 | Surface grinding method of silicon carbide wafer |
| CN114800252B (en) * | 2022-03-23 | 2024-03-19 | 浙江富芯微电子科技有限公司 | Surface grinding method of silicon carbide wafer |
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