CN114800252A - Surface grinding method of silicon carbide wafer - Google Patents
Surface grinding method of silicon carbide wafer Download PDFInfo
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- CN114800252A CN114800252A CN202210289430.4A CN202210289430A CN114800252A CN 114800252 A CN114800252 A CN 114800252A CN 202210289430 A CN202210289430 A CN 202210289430A CN 114800252 A CN114800252 A CN 114800252A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 151
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000005498 polishing Methods 0.000 claims abstract description 44
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims description 114
- 239000003921 oil Substances 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 15
- 229910001651 emery Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 238000001179 sorption measurement Methods 0.000 claims description 7
- BTGGRPUPMPLZNT-PGEUSFDPSA-N 2,2-bis[[(z)-octadec-9-enoyl]oxymethyl]butyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(CC)(COC(=O)CCCCCCC\C=C/CCCCCCCC)COC(=O)CCCCCCC\C=C/CCCCCCCC BTGGRPUPMPLZNT-PGEUSFDPSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 5
- 238000011161 development Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 13
- 238000005520 cutting process Methods 0.000 description 8
- 150000003376 silicon Chemical class 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention belongs to the technical field of new silicon carbide materials, and particularly relates to a surface grinding method of a silicon carbide wafer, which comprises the following steps: s1: placing the front surface of the silicon carbide wafer on a wax-free pad adhered on a grinding large disc, and roughly grinding the back surface of the silicon carbide wafer by using a carborundum wheel grinding head; s2: placing the back surface of the silicon carbide wafer on a wax-free pad adhered on a grinding large disc, and roughly grinding the front surface of the silicon carbide wafer by using a carborundum wheel grinding head; s3: annealing the silicon carbide wafer treated by the S1 and the S2; s4: and (4) carrying out chemical polishing and fine grinding on the silicon carbide wafer treated by the S3. Based on the structure and the method, the grinding efficiency can be greatly improved, the grinding time is saved, the cost for modifying equipment is low, and the design and development cost is low.
Description
Technical Field
The invention belongs to the technical field of new silicon carbide materials, and particularly relates to a surface grinding method of a silicon carbide wafer.
Background
The third generation of wide band gap semiconductor materials, represented by SiC, is the core of the development of high-power, high-frequency, high-temperature, strong-radiation-resistant blue lasers, ultraviolet detectors, and other technologies. The SiC crystal has the characteristics of large forbidden band width, high thermal conductivity, large electron saturation drift rate, high critical breakdown electric field, low dielectric constant, good chemical stability and the like, is a preferred substitute of Si in the field of power electronics, and has wide application prospects in the aspects of communication, automobiles, aviation, aerospace, oil exploitation, national defense and the like.
Grinding is the first thinning procedure in the processing process of the silicon carbide wafer, and the grinding aims to remove tool marks and surface damage layers on the surface of the SiC slice caused in the cutting process. Due to the high hardness of SiC, the crystal surface of SiC slices must be ground during grinding using a high hardness abrasive. Grinding can be divided into coarse grinding and fine grinding according to the process.
The rough grinding mainly removes tool marks caused by cutting and a deteriorated layer caused by cutting, and abrasive grains with larger grain diameters are used to improve the processing efficiency. The fine grinding is mainly to remove the surface damage layer left by the rough grinding, improve the surface smoothness, control the surface shape and the thickness of the wafer, and facilitate the subsequent polishing, so the wafer is ground by using abrasive grains with finer grain diameter.
Because the fracture toughness of SiC is low, SiC is easy to crack in the grinding process, so that the grinding of SiC wafers is very difficult.
Disclosure of Invention
The invention aims to provide a surface grinding method of a silicon carbide wafer, which aims to solve the problem of grinding difficulty caused by low fracture toughness of the silicon carbide wafer in the prior art.
The invention provides a surface grinding method of a silicon carbide wafer, which comprises the following steps:
s1: placing the front surface of the silicon carbide wafer on a wax-free pad adhered on a grinding large disc, and roughly grinding the back surface of the silicon carbide wafer by using a carborundum wheel grinding head;
s2: placing the back surface of the silicon carbide wafer on a wax-free pad adhered on a grinding large disc, and roughly grinding the front surface of the silicon carbide wafer by using a carborundum wheel grinding head;
s3: annealing the silicon carbide wafer treated by the S1 and the S2;
s4: and (4) carrying out chemical polishing and fine grinding on the silicon carbide wafer treated by the S3.
In the method for polishing the surface of a silicon carbide wafer as described above, it is preferable that the step of coarsely polishing the back surface of the silicon carbide wafer in S1 further includes: and adopting an oil-based grinding fluid, taking trimethylolpropane trioleate as an oil-based medium of the grinding fluid, driving the large grinding disc and the carborundum grinding wheel grinding head to rotate and grind the back surface of the silicon carbide wafer in a differential speed manner until a first index is reached, wherein the second index comprises the whole thickness of the silicon carbide wafer of 365-385 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the silicon carbide wafer is less than or equal to 5 mu m.
In the method for polishing the surface of a silicon carbide wafer as described above, it is preferable that the step of coarsely polishing the front surface of the silicon carbide wafer in S2 further includes: and adopting an oil-based grinding fluid, taking trimethylolpropane trioleate as an oil-based medium of the grinding fluid, driving the large grinding disc and the carborundum grinding wheel grinding head to rotate at a differential speed to grind the front surface of the silicon carbide wafer until reaching a second index, wherein the second index comprises that the whole thickness of the silicon carbide wafer is 365-385 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the silicon carbide wafer is less than or equal to 5 mu m.
In the method for polishing the surface of a silicon carbide wafer as described above, it is preferable that the oil-based polishing liquid is discharged from a flow path provided in the center pillar of the polishing platen and is distributed between the non-wax pad and the carborundum wheel polishing head.
In the method for polishing the surface of a silicon carbide wafer as described above, it is preferable that the annealing treatment of the silicon carbide wafer treated in S1 and S2 in S3 includes: putting the silicon carbide wafer into an annealing furnace with the annealing temperature of 1000-1300 ℃ for 9-13 h, taking out the silicon carbide wafer, and placing the silicon carbide wafer in air to cool the silicon carbide wafer to room temperature.
In the method for polishing the surface of a silicon carbide wafer as described above, it is preferable that the step of polishing and refining the silicon carbide wafer treated in S3 in S4 comprises: and placing the silicon carbide wafer treated by the S3 in chemical polishing equipment, and respectively polishing the front side and the back side of the silicon carbide wafer to a third index by adopting a modified silicon solution with the particle diameter of 30-135 nm, wherein the third index comprises that the whole thickness of the wafer is 340-360 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the wafer is less than or equal to 5 mu m.
In the method for polishing the surface of a silicon carbide wafer as described above, it is preferable that the polishing platen is attached with a plurality of the wax-free pads, and each of the wax-free pads is provided with a plurality of adsorption regions adapted to adsorb and fix the silicon carbide wafer.
In the method for polishing the surface of a silicon carbide wafer as described above, it is further preferable that the emery wheel polishing head is provided at least at one position so as to completely cover one of the wax-free pads.
In the method for polishing the surface of a silicon carbide wafer as described above, it is preferable that four of the wax-free pads are attached to the polishing platen, and three adsorption regions are provided on each of the wax-free pads.
Compared with the prior art, the invention has the following advantages:
the surface grinding method of the silicon carbide wafer disclosed by the invention adopts the carborundum grinding wheel as the grinding head, and the hardness of the main material diamond of the carborundum grinding wheel is higher than that of the carborundum, so that the carborundum grinding head in high-speed rotation can effectively remove tool marks caused by cutting and a deteriorated layer caused by cutting in the silicon carbide wafer; meanwhile, the silicon carbide wafer can be effectively fixed by the wax-free pad, so that the carborundum grinding wheel grinding head can rotate at a high speed to grind the wafer, and the wafer can not rotate along with the grinding head, thereby ensuring the grinding efficiency. Based on the structure and the method, the process can greatly improve the grinding efficiency and save the grinding time, and the cost for modifying equipment is lower, and the design and development cost is less.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of the structure of the grinding apparatus of the present invention;
FIG. 2 is a schematic view of the combination of a wax-free pad and a large polishing disk.
Description of reference numerals:
1-grinding large disc, 2-central pillar, 3-carborundum grinding wheel head, 4-central rotating shaft, 5-no-wax pad and 6-adsorption zone.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the terms in the present invention can be understood in a specific case to those skilled in the art.
A method for surface grinding a silicon carbide wafer according to some embodiments of the present invention will be described with reference to FIGS. 1-2.
Referring to fig. 1 to 2, the method for grinding the surface of a silicon carbide wafer in the present embodiment includes:
s1: placing the front surface of the silicon carbide wafer on a wax-free pad 5 adhered on a large grinding disc 1, and carrying out coarse grinding on the back surface of the silicon carbide wafer by using a carborundum wheel grinding head 3;
s2: placing the back surface of the silicon carbide wafer on a wax-free pad 5 adhered on a large grinding disc 1, and roughly grinding the front surface of the silicon carbide wafer by using a carborundum wheel grinding head 3;
s3: annealing the silicon carbide wafer treated by the S1 and the S2;
s4: and (4) carrying out chemical polishing and fine grinding on the silicon carbide wafer treated by the S3.
Specifically, a central pillar 2 is erected at the center of the large grinding disc 1 and rotates under the driving of the central pillar 2, and a central rotating shaft 4 parallel to the central pillar 2 is erected at the center of the emery wheel grinding head 3 and rotates under the driving of the central rotating shaft 4. During the grinding process, the grinding large plate 1 and the carborundum wheel grinding head 3 rotate at a different speed to grind the carborundum wafer.
In the method, the carborundum grinding wheel is used as a grinding head and a wax-free pad 5 in the coarse grinding process, and the hardness of diamond which is a main material of the carborundum grinding wheel is higher than that of silicon carbide, so that the carborundum grinding head 3 in high-speed rotation can effectively remove tool marks caused by cutting and a deteriorated layer caused by cutting in a carborundum wafer; meanwhile, the silicon carbide wafer can be effectively fixed by the wax-free pad 5, so that the silicon carbide grinding wheel grinding head 3 does not rotate together with the grinding head in the process of grinding the wafer by rotating at a high speed, and the grinding efficiency can be ensured. Based on the structure and the method, the process can greatly improve the grinding efficiency and save the grinding time, and the cost for modifying equipment is lower, and the design and development cost is less.
Specifically, the rough grinding of the back surface of the silicon carbide wafer in S1 further includes: the method adopts an oil-based grinding fluid, takes trimethylolpropane trioleate as an oil-based medium of the grinding fluid, plays roles of mixing abrasive particles, cooling a workpiece, lubricating a grinding tool, cleaning and removing chips and the like in the grinding process, and drives a grinding large disc 1 and a carborundum grinding wheel grinding head 3 to rotate and grind the back surface of the silicon carbide wafer in a differential speed manner until a first index is reached, wherein the first index comprises the whole thickness of the silicon carbide wafer being 385-400 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the silicon carbide wafer is less than or equal to 5 mu m, namely TV3 (the thickness values of the upper, middle and lower three points in any measurement, and the difference value between the maximum value and the minimum value) is less than or equal to 5 mu m.
The rough grinding of the front surface of the silicon carbide wafer in S2 further includes: the method adopts an oil-based grinding fluid, takes trimethylolpropane trioleate as an oil-based medium of the grinding fluid, plays roles of mixing abrasive particles, cooling a workpiece, lubricating a grinding tool, cleaning and removing chips and the like in the grinding process, and drives a grinding large disc 1 and a carborundum grinding head 3 to rotate in a differential speed manner until the front side of a silicon carbide wafer is ground until a second index is reached, wherein the second index comprises the whole thickness of the silicon carbide wafer of 365-385 mu m, and the difference value between the maximum value and the minimum value in any three-point thickness values on the silicon carbide wafer is less than or equal to 5 mu m, namely TV3 (the thickness values of upper, middle and lower points in any measurement, and the difference value between the maximum value and the minimum value) is less than or equal to 5 mu m.
The annealing treatment of the S1 and S2 treated silicon carbide wafer in S3 comprises the following steps:
and putting the silicon carbide wafer into an annealing furnace with the annealing temperature of 1000-1300 ℃ for 9-13 h, taking out the silicon carbide wafer, putting the silicon carbide wafer into air, and cooling the silicon carbide wafer to room temperature to finish the whole annealing treatment process. In the method, the annealing treatment has the following beneficial effects: 1) the hardness of the silicon carbide wafer is reduced, and the cutting processability is improved; 2) the residual stress is eliminated, the size is stabilized, and the deformation and fission tendency is reduced; 3) the grain of the silicon carbide wafer is refined, the prevention is adjusted, and the tissue defect is eliminated.
The chemical polishing and fine grinding of the silicon carbide wafer treated by the S3 in the S4 comprises the following steps:
and placing the silicon carbide wafer treated by the S3 in polishing equipment, and respectively polishing the front side and the back side of the silicon carbide wafer to a third index by adopting a modified silicon solution with the particle diameter of 30-135 nm, wherein the third index comprises that the overall thickness of the silicon carbide wafer is 340-360 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the silicon carbide wafer is less than or equal to 5 mu m, namely TV3 (the thickness values of the upper, middle and lower three points in any measurement, and the difference value between the maximum value and the minimum value) is less than or equal to 5 mu m. The modified silicon solution is a silane coupling agent modified silicon solution, the action mechanism of the modified silicon solution is that a part of groups in coupling agent molecules can form strong chemical bonding with the surface of the silicon dioxide particles in the silicon solution, and the surface of the silicon dioxide particles in the silicon solution can effectively improve the surface property and the reactivity by selecting an organic functional group. The chemical polishing treatment can completely remove the damage layer remained in the grinding process, thereby obtaining a high-quality polished surface.
In S1, S2, and S4, the oil-based polishing liquid or the modified silicon solution flows out from the flow channel provided in the center pillar 2 of the polishing platter 1 and is distributed between the non-wax pad 5 and the emery wheel polishing head 3. Specifically, the six channels are positioned in the central pillar 2, and a plurality of holes are formed on the circumference of the central pillar 2, and the holes are positioned on the upper surface of the grinding large disc 1 and are suitable for adding oil-based grinding fluid or modified silicon solution. During the grinding process, the oil-based grinding fluid or the modified silicon solution flows out of the holes and diffuses outwards under the action of the centrifugal force of the large grinding disc 1 so as to be uniformly distributed between the carborundum grinding wheel and the wax-free pad 5.
Furthermore, a plurality of wax-free pads 5 are adhered on the large polishing disc 1, and each wax-free pad 5 is provided with a plurality of adsorption areas 6 suitable for adsorbing and fixing the silicon carbide wafer. The above arrangement is suitable for improving the grinding efficiency, and specifically, as shown in fig. 2, four wax-free pads 5 are adhered on the grinding large disc 1, and three adsorption regions 6 are arranged on each wax-free pad 5.
In order to further improve the polishing efficiency, one large polishing disk 1 corresponds to a plurality of diamond grinding wheel polishing heads 3, and the plurality of diamond grinding wheel polishing heads 3 are uniformly arranged on the large polishing disk 1. Specifically, the centers of the plurality of emery wheel grinding heads 3 are located on the same circumference, and the circumference and the large grinding disc 1 are concentric circles.
The emery wheel head 3 is present in at least one position completely covering a wax-free pad 5. Preferably, the diameter of the emery wheel polishing head 3 is equal to or larger than the diameter of the non-wax pad 5, the centers of the non-wax pads 5 are located on the same circumference, and the circumference is concentric with the circumference where the centers of the large polishing disk 1 and the emery wheel polishing head 3 are located.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. A surface grinding method of a silicon carbide wafer is characterized by comprising the following steps:
s1: placing the front surface of the silicon carbide wafer on a wax-free pad adhered on a grinding large disc, and roughly grinding the back surface of the silicon carbide wafer by using a carborundum wheel grinding head;
s2: placing the back surface of the silicon carbide wafer on a wax-free pad adhered on a grinding large disc, and roughly grinding the front surface of the silicon carbide wafer by using a carborundum wheel grinding head;
s3: annealing the silicon carbide wafer treated by the S1 and the S2;
s4: and (4) carrying out chemical polishing and fine grinding on the silicon carbide wafer treated by the S3.
2. The surface grinding method for silicon carbide wafers as set forth in claim 1,
the rough grinding of the back surface of the silicon carbide wafer in S1 further includes: and adopting an oil-based grinding fluid, taking trimethylolpropane trioleate as an oil-based medium of the grinding fluid, and driving the large grinding disc and the carborundum grinding wheel grinding head to rotate and grind the back surface of the silicon carbide wafer in a differential speed manner until a first index is reached, wherein the first index comprises the whole thickness of the silicon carbide wafer being 385-400 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the silicon carbide wafer is less than or equal to 5 mu m.
3. The method of grinding the surface of a silicon carbide wafer according to claim 1,
the rough grinding of the front side of the silicon carbide wafer in S2 further comprises: and adopting an oil-based grinding fluid, taking trimethylolpropane trioleate as an oil-based medium of the grinding fluid, driving the large grinding disc and the carborundum grinding wheel grinding head to rotate at a differential speed to grind the front surface of the silicon carbide wafer until reaching a second index, wherein the second index comprises that the whole thickness of the silicon carbide wafer is 365-385 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the silicon carbide wafer is less than or equal to 5 mu m.
4. The surface grinding method for a silicon carbide wafer according to claim 2 or 3,
the oil-based grinding fluid flows out from a flow channel arranged in the grinding large disc central support and is distributed between the non-wax pad and the carborundum grinding wheel grinding head.
5. The surface grinding method for silicon carbide wafers as set forth in claim 1,
the annealing treatment of the silicon carbide wafer treated by the S1 and the S2 in the S3 comprises the following steps:
putting the silicon carbide wafer into an annealing furnace with the annealing temperature of 1000-1300 ℃ for 9-13 h, taking out the silicon carbide wafer, and placing the silicon carbide wafer in air to cool the silicon carbide wafer to room temperature.
6. The surface grinding method for silicon carbide wafers as set forth in claim 1,
the chemical polishing and fine grinding of the silicon carbide wafer treated by the S3 in the S4 comprises the following steps:
and placing the silicon carbide wafer treated by the S3 in chemical polishing equipment, and respectively polishing the front side and the back side of the silicon carbide wafer to a third index by adopting a modified silicon solution with the particle diameter of 30-135 nm, wherein the third index comprises that the whole thickness of the wafer is 340-360 mu m, and the difference value between the maximum value and the minimum value in the thickness values of any three points on the wafer is less than or equal to 5 mu m.
7. The surface grinding method for silicon carbide wafers as set forth in claim 1,
the large grinding disc is adhered with a plurality of wax-free pads, and each wax-free pad is provided with a plurality of adsorption areas suitable for adsorbing and fixing the silicon carbide wafer.
8. The surface grinding method for silicon carbide wafers as set forth in claim 7,
the emery wheel grinding head has at least one position which completely covers one of the wax-free pads.
9. The surface grinding method for silicon carbide wafers as set forth in claim 7,
four wax-free pads are adhered to the large grinding disc, and three adsorption areas are arranged on each wax-free pad.
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